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International Journal of Numerical Modelling-Electronic Networks Devices and Fields最新文献

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Graphite-Inspired Dumbbell-Shaped Single Radiator MIMO Antenna for THz Regime: A Frequency Switchable/Reconfigurable Approach 太赫兹波段的石墨启发哑铃形单辐射MIMO天线:频率可切换/可重构方法
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-18 DOI: 10.1002/jnm.70101
Mayuri Kulshreshtha, Rajarshi Bhattacharya

A graphite-inspired frequency switchable/reconfigurable MIMO (Multiple-input multiple-output) antenna is implemented for THz applications. Reconfigurability in the frequency response is achieved by layering the graphite in the slot of Antenna-2. The proposed antenna provides isolation better than 30 dB, high efficiency, and reasonable gain in the resonating band. An impedance bandwidth of 11.5% (2.04–2.29 THz) & 15.6% (4.06–4.74 THz) for Antenna-2 and 12.5% (3.53–3.99 THz) for Antenna-3 is achieved. Both the presented antennas demonstrate excellent diversity performance like Envelope Correlation Coefficient (ECC) < 0.03, Directive Gain (DG) > 9.95 dB; Total Active Reflection Coefficient (TARC) < −10 dB, and Channel Capacity Loss (CCL) < 0.35 bits/s/Hz, that can be incorporated into biomedical applications, high-frequency telecommunications, sensing applications, biological and astrophysical insights.

一种受石墨启发的频率可切换/可重构MIMO(多输入多输出)天线用于太赫兹应用。频率响应的可重构性是通过在天线2的槽中分层石墨来实现的。该天线具有隔离度大于30 dB、效率高、谐振频带增益合理的特点。天线2的阻抗带宽为11.5% (2.04-2.29 THz),天线3的阻抗带宽为15.6% (4.06-4.74 THz),天线3的阻抗带宽为12.5% (3.53-3.99 THz)。两种天线均具有良好的分集性能,包络相关系数(ECC)为0.03,指令增益(DG)为9.95 dB;总主动反射系数(TARC) <−10 dB,信道容量损耗(CCL) < 0.35 bit /s/Hz,可用于生物医学应用、高频电信、传感应用、生物和天体物理洞察。
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引用次数: 0
On the Nature, Root-Cause, and Elimination of Ground Resonances in a Transmission-Line Based Connector With Guard Traces 带保护走线的传输在线连接器接地谐振的性质、根本原因和消除
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-15 DOI: 10.1002/jnm.70116
Navid Elahi, Jian-Ming Jin

In this paper, we investigate the important phenomenon of “ground resonance” in a transmission-line based connector with guard traces added for crosstalk reduction. Through a modal analysis, we analyze the phase differences between the differential signal mode on the transmission line and differential ground mode introduced with the addition of guard traces that are also known as ground lines. We show that the so-called “ground resonance” is due to the phase difference between the two modes, which causes the reflection of the combined field, instead of the ground mode alone, at the ends of the connector. With this revelation, we propose three methods based on two approaches to eliminating ground resonances to reduce the insertion loss and crosstalk in a connector with multiple transmission lines. One approach is to modify the configuration of the two ends of the guard traces to reduce the phase difference between the signal and ground modes, and the other approach is to compensate for the phase difference by changing the propagation velocity of the signal mode. We demonstrate the effectiveness of these approaches through numerical simulation of two connectors: one based on the microstrip structure and the other based on the coplanar structure, with both a single differential pair and two adjacent differential pairs considered.

在本文中,我们研究了为减少串扰而增加保护走线的基于传输在线的连接器中的重要现象“地共振”。通过模态分析,我们分析了传输线上的差分信号模式与引入保护走线(也称为地线)的差分接地模式之间的相位差。我们表明,所谓的“地共振”是由于两种模式之间的相位差,这导致了组合场的反射,而不是单独的地模式,在连接器的两端。在此基础上,我们提出了三种基于两种方法的方法来消除接地谐振,以减少具有多条传输线的连接器中的插入损耗和串扰。一种方法是通过修改保护走线两端的配置来减小信号与地模式之间的相位差,另一种方法是通过改变信号模式的传播速度来补偿相位差。我们通过两种连接器的数值模拟证明了这些方法的有效性:一种基于微带结构,另一种基于共面结构,同时考虑了单个差分对和两个相邻的差分对。
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引用次数: 0
The Impact of Pore Diameters, Pore Randomness, and Void Fraction on the EMI Shielding of Polyurethane Foams 孔径、孔隙随机性和孔隙率对聚氨酯泡沫材料电磁干扰屏蔽性能的影响
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-08 DOI: 10.1002/jnm.70111
Ahmad Mamoun Khamis, Isabelle Huynen

This paper presents a novel approach to analyze the electromagnetic interference (EMI) shielding effectiveness (SE) of polyurethane (PU) foam geometries, which are built in Blender software and simulated using CST Studio software. Three different batches of geometries were built to investigate the impact of pore diameters, pore randomness, and void fraction of PU foam on the SE, reflection coefficient (S11), and electromagnetic absorption in the 26.5–40 GHz frequency range. The observed resonance frequency decreased with decreasing pore diameters and void fraction. Decreasing the pore diameter, increasing the pore randomness, and decreasing the void fraction enhanced the SE in the frequency range between the resonance frequency and 40 GHz. The EM absorption increased with increasing the pore diameter and randomness but decreased with increasing the void fraction. This study also presents simulations and measurements of Polytetrafluoroethylene (PTFE) and PU foam materials. The simulation results were compared with the measured ones obtained using vector network analyzer measurements to verify CST Studio's ability to accurately calculate the EM parameters. The measured and simulated results were in good agreement, confirming the accuracy of the results obtained using CST Studio. Our new parametric study fills a gap in existing literature since it combines for the first time an open-source 3D software for 3D rendering with an electromagnetic simulator to evaluate the impact of the pore topography (void fraction, diameter, randomness, etc.) on the EMI shielding performance of PU foams.

本文提出了一种新的方法来分析聚氨酯(PU)泡沫几何形状的电磁干扰(EMI)屏蔽效果(SE),该方法是在Blender软件中构建的,并使用CST Studio软件进行模拟。在26.5-40 GHz频率范围内,建立了3个不同批次的几何形状,研究了孔径、孔隙随机性和空隙率对泡沫塑料的SE、反射系数(S11)和电磁吸收的影响。观察到的共振频率随着孔径和孔隙率的减小而减小。减小孔径、增大孔隙随机性和减小孔隙率均能提高共振频率至40 GHz范围内的SE。随孔隙率的增加,电磁吸收随孔隙直径的增大而增大,随孔隙率的增加而减小。本研究还介绍了聚四氟乙烯(PTFE)和PU泡沫材料的模拟和测量。将仿真结果与矢量网络分析仪测量结果进行了比较,验证了CST Studio准确计算电磁参数的能力。实测结果与模拟结果吻合良好,证实了CST Studio计算结果的准确性。我们的新参数研究填补了现有文献的空白,因为它首次将用于3D渲染的开源3D软件与电磁模拟器相结合,以评估孔隙形貌(孔隙分数,直径,随机性等)对PU泡沫的EMI屏蔽性能的影响。
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引用次数: 0
Leveraging Machine Learning for Enhanced Design and Optimization of Gaussian-Doped Trigate FinFETs 利用机器学习增强设计和优化高斯掺杂三门finfet
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-07 DOI: 10.1002/jnm.70108
B. Jasmine Priyadharshini, N. B. Balamurugan, M. Hemalatha, M. Suguna

Fin-shaped Field Effect Transistors (FinFETs) are essential in the world of sub-nanometer technology nodes because of their remarkable scalability and electrostatic control. This work presents a new, optimized, and small-scale Gaussian-doped FinFET design that improves analog performance and minimizes short channel effects over conventional planar MOSFETs. Our unique structure leverages an Artificial Neural Network (ANN) in conjunction with a Genetic Algorithm (GA) for optimization. The dataset for ANN training was meticulously generated by designing and simulating Gaussian-doped FinFETs with varying Fin-width (WFin) and Fin-height (HFin). Through this process, we identified optimal WFin and HFin values that significantly improve performance characteristics. The optimized Gaussian-doped FinFET demonstrates superior control over short channel effects, as evidenced by a subthreshold swing (SS) of 66 mV/dec, an off-state current (IOFF) of 3.54 pA, and an on-state current (ION) of 12 μA. The close alignment between the optimized and simulated performance characteristics, with less than a 5% variance, underscores the efficacy of our optimization approach.

鳍形场效应晶体管(finfet)由于其出色的可扩展性和静电控制能力,在亚纳米技术节点领域中占有重要地位。这项工作提出了一种新的,优化的,小规模的高斯掺杂FinFET设计,提高了模拟性能,并最大限度地减少了传统平面mosfet的短通道效应。我们独特的结构利用人工神经网络(ANN)结合遗传算法(GA)进行优化。通过设计和模拟具有不同鳍宽(WFin)和鳍高(HFin)的高斯掺杂finfet,精心生成用于人工神经网络训练的数据集。通过这个过程,我们确定了显著改善性能特征的最佳WFin和HFin值。优化后的掺高斯FinFET的亚阈值摆幅(SS)为66 mV/dec,关断电流(IOFF)为3.54 pA,通断电流(ION)为12 μA,对短通道效应具有良好的控制能力。优化和模拟的性能特征之间的紧密一致,差异小于5%,强调了我们的优化方法的有效性。
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引用次数: 0
Special Issue on the 7th International Sino MOS-AK Workshop 第七届中国MOS-AK国际研讨会特刊
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-07 DOI: 10.1002/jnm.70114
Jun Zhang, Wladek Grabinski, Yuehang Xu

As device structures become increasingly complex, with the continuous emergence of novel materials, unconventional architectures, and new physical phenomena, the coupling of multiple physical domains, including thermal, electrical, and optical effects, is becoming ever more prevalent. At the same time, rising development and manufacturing costs place additional demands on modelers to deliver representations that are both accurate and computationally efficient across the entire chain from device physics to circuit behavior. Modeling serves two complementary purposes: Theoretical models provide insight into the operating principles of devices while also guiding design optimization and enabling engineers to fully exploit intertwined physical effects. Analytical modeling, however, often requires careful trade-offs among accuracy, generality, and simplicity. Models must be predictive enough to inform design while offering meaningful physical insight. In modern semiconductor devices, which often feature three-dimensional geometries, solving the coupled semiconductor physics equations analytically is extremely challenging or even impossible. Closed-form solutions are typically unattainable, so judicious simplifications are necessary to ensure that models remain tractable and practically useful.

The papers in this Special Issue address these challenges by balancing physical fidelity with computational efficiency. They deepen our understanding of device physics while providing models that are both insightful and practical, with applications spanning cryogenic electronics, wide-bandgap devices, and radiation-hardened systems.

Su et al. [1] present a charge-based analytical model for bulk MOSFETs, that is, valid down to 10 mK. Their work clarifies the interface-trap-dominated mechanisms that lead to threshold voltage divergence between NMOS and PMOS devices and quantifies significant analog parameter enhancements, including a 73% increase in PMOS cutoff frequency at 4 K. These findings are essential for quantum-control electronics. Complementing this, Mao et al. [2] provide a comprehensive review of four physics-based compact models for GaN HEMTs, namely MVSG, ASM HEMT, EPFL, and QPZD. They analyze how each model addresses challenges such as trapping effects, self-heating, and process variability, and highlight emerging opportunities for combining physical models with machine learning to accelerate parameter extraction and quantify uncertainties. In the area of radiation-tolerant electronics, Xu et al. [3] introduce a machine-learning approach using an ant-colony-optimized neural network. By adaptively sampling critical waveform regions, their method achieves an RMS error of only 0.82% in predicting single-event transient currents, surpassing the fidelity limits of traditional double-exponential pulse models and enabling high-precision radiation effect simulation for aerospace applications. Meanwhile, De

随着器件结构变得越来越复杂,随着新材料、非常规架构和新物理现象的不断出现,包括热、电和光学效应在内的多个物理领域的耦合变得越来越普遍。与此同时,不断上升的开发和制造成本对建模人员提出了额外的要求,要求他们在从设备物理到电路行为的整个链中提供既准确又计算高效的表示。建模有两个互补的目的:理论模型提供了对设备工作原理的洞察,同时也指导了设计优化,使工程师能够充分利用相互交织的物理效应。然而,分析建模通常需要在准确性、通用性和简单性之间进行谨慎的权衡。模型必须具有足够的预测性,以便在提供有意义的物理洞察的同时为设计提供信息。在现代半导体器件中,通常具有三维几何形状,解析求解耦合半导体物理方程是极具挑战性的,甚至是不可能的。封闭形式的解决方案通常是无法实现的,因此明智的简化是必要的,以确保模型仍然易于处理和实际有用。本期特刊中的论文通过平衡物理保真度和计算效率来解决这些挑战。它们加深了我们对器件物理的理解,同时提供了既富有洞察力又实用的模型,应用范围涵盖低温电子、宽带隙器件和抗辐射系统。Su等人提出了一种基于电荷的体积mosfet分析模型,即有效电压低至10 mK。他们的工作阐明了导致NMOS和PMOS器件之间阈值电压差异的界面陷阱主导机制,并量化了显著的模拟参数增强,包括4 K时PMOS截止频率增加73%。这些发现对量子控制电子学至关重要。作为补充,Mao等人提供了四种基于物理的GaN HEMT紧凑型模型的全面回顾,即MVSG, ASM HEMT, EPFL和QPZD。他们分析了每个模型如何应对诸如捕获效应、自加热和过程可变性等挑战,并强调了将物理模型与机器学习相结合以加速参数提取和量化不确定性的新机会。在耐辐射电子学领域,Xu等人介绍了一种使用抗蜂群优化神经网络的机器学习方法。通过自适应采样临界波形区域,他们的方法在预测单事件瞬态电流时的RMS误差仅为0.82%,超过了传统双指数脉冲模型的保真度限制,并实现了航空航天应用的高精度辐射效应模拟。同时,Deng等人展示了一种人工智能辅助SPICE集成的实用策略。他们为螺旋电感器和机器增强功率MOS跨导模型采用几何参数化缩放定律,以加速参数提取的数量级,同时保持完全的SPICE兼容性。这种方法显著地简化了工业设计工作流程。总的来说,这些贡献指向了一种以物理为依据、数据驱动的协同设计方法的趋势。通过将严格的物理洞察力与计算效率,机器学习感知工作流程相结合,它们可以在从量子接口到航空航天系统的广泛应用中实现设备和电路的稳健优化。未来的研究应优先考虑开发人工智能工具与物理模型之间的标准化接口,将模型扩展到三维集成宽带隙架构,并建立能够在从接近零开尔文到轨道辐射条件的环境中工作的新兴超宽带隙材料的协同设计框架。我们衷心感谢所有作者的杰出贡献,他们推动了半导体建模科学的前沿。
{"title":"Special Issue on the 7th International Sino MOS-AK Workshop","authors":"Jun Zhang,&nbsp;Wladek Grabinski,&nbsp;Yuehang Xu","doi":"10.1002/jnm.70114","DOIUrl":"https://doi.org/10.1002/jnm.70114","url":null,"abstract":"<p>As device structures become increasingly complex, with the continuous emergence of novel materials, unconventional architectures, and new physical phenomena, the coupling of multiple physical domains, including thermal, electrical, and optical effects, is becoming ever more prevalent. At the same time, rising development and manufacturing costs place additional demands on modelers to deliver representations that are both accurate and computationally efficient across the entire chain from device physics to circuit behavior. Modeling serves two complementary purposes: Theoretical models provide insight into the operating principles of devices while also guiding design optimization and enabling engineers to fully exploit intertwined physical effects. Analytical modeling, however, often requires careful trade-offs among accuracy, generality, and simplicity. Models must be predictive enough to inform design while offering meaningful physical insight. In modern semiconductor devices, which often feature three-dimensional geometries, solving the coupled semiconductor physics equations analytically is extremely challenging or even impossible. Closed-form solutions are typically unattainable, so judicious simplifications are necessary to ensure that models remain tractable and practically useful.</p><p>The papers in this Special Issue address these challenges by balancing physical fidelity with computational efficiency. They deepen our understanding of device physics while providing models that are both insightful and practical, with applications spanning cryogenic electronics, wide-bandgap devices, and radiation-hardened systems.</p><p>Su et al. [<span>1</span>] present a charge-based analytical model for bulk MOSFETs, that is, valid down to 10 mK. Their work clarifies the interface-trap-dominated mechanisms that lead to threshold voltage divergence between NMOS and PMOS devices and quantifies significant analog parameter enhancements, including a 73% increase in PMOS cutoff frequency at 4 K. These findings are essential for quantum-control electronics. Complementing this, Mao et al. [<span>2</span>] provide a comprehensive review of four physics-based compact models for GaN HEMTs, namely MVSG, ASM HEMT, EPFL, and QPZD. They analyze how each model addresses challenges such as trapping effects, self-heating, and process variability, and highlight emerging opportunities for combining physical models with machine learning to accelerate parameter extraction and quantify uncertainties. In the area of radiation-tolerant electronics, Xu et al. [<span>3</span>] introduce a machine-learning approach using an ant-colony-optimized neural network. By adaptively sampling critical waveform regions, their method achieves an RMS error of only 0.82% in predicting single-event transient currents, surpassing the fidelity limits of traditional double-exponential pulse models and enabling high-precision radiation effect simulation for aerospace applications. Meanwhile, De","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"38 5","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/jnm.70114","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145012430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digital Predistorter Implementation for Wideband Power Amplifiers in New Generation Wireless Systems Based on a Low-Complexity Volterra Series Model 基于低复杂度Volterra系列模型的新一代无线系统宽带功率放大器数字预失真器实现
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-04 DOI: 10.1002/jnm.70113
Haithem Rezgui, Ghalid Abib, Fatma Rouissi, Adel Ghazel

In this article, we provide a novel, expanded, and adapted pruning approach for the Simplified Volterra Series (SVS) model that makes it applicable to a wider range of Power Amplifiers (PAs). The proposed Modified SVS (MSVS) model is then applied in a Digital Predistortion (DPD) architecture to linearize a 25 W Gallium Nitride (GaN) RF PA. A comprehensive and detailed experimental hardware setup is designed for the in-depth testing and validation of the proposed model based DPD architecture, covering PA characterization, model coefficients extraction, and linearization. Our proposed MSVS based DPD significantly reduces the computational cost by at least 60% compared to widely referenced models in the literature while maintaining an optimal balance between accuracy and complexity. Experimental results performed using Long Term Evolution (LTE) signals show a modeling accuracy of −37 dB in terms of Normalized Mean Square Error (NMSE) and a 14 dB reduction in out-of-band distortion in terms of Adjacent Channel Power Ratio (ACPR), compared to the no DPD configuration.

在本文中,我们为简化Volterra系列(SVS)模型提供了一种新颖、扩展和自适应的修剪方法,使其适用于更广泛的功率放大器(pa)。然后将提出的改进SVS (MSVS)模型应用于数字预失真(DPD)架构中,对25 W氮化镓(GaN)射频放大器进行线性化。为了深入测试和验证所提出的基于DPD架构的模型,设计了一个全面而详细的实验硬件设置,包括PA表征,模型系数提取和线性化。与文献中广泛引用的模型相比,我们提出的基于MSVS的DPD显着降低了至少60%的计算成本,同时保持了准确性和复杂性之间的最佳平衡。使用长期演进(LTE)信号进行的实验结果表明,与没有DPD配置相比,就归一化均方误差(NMSE)而言,建模精度为−37 dB,就相邻信道功率比(ACPR)而言,带外失真降低了14 dB。
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引用次数: 0
Coarse and Fine Encoding Genetic Algorithm Assisted Parameter Extraction Approach for Quasi-Empirical Equivalent Circuit Model of Fan-Out Coplanar Waveguide 扇出共面波导准经验等效电路模型的粗、精编码遗传算法辅助参数提取方法
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-04 DOI: 10.1002/jnm.70107
Yanghui Hu, Hongliang Lu, Silu Yan, Lin Cheng, Shaowei Wang, Ranran Zhao, Yuming Zhang

In this article, a genetic algorithm based on coarse and fine encoding is proposed to assist the parameter extraction method of the coplanar waveguide model. First, an equivalent circuit model is proposed to accurately characterize the electrical characteristic parameters of the coplanar waveguide. The proposed quasi-empirical equivalent circuit model not only has a certain physical meaning but can also realize the solution of the nonlinear relationship between the device performance parameters and the dimensional structure parameters. Then, a single-step genetic algorithm is proposed to accelerate the parameter extraction based on the proposed semi-empirical model of the coplanar waveguide. On this basis, a coarse and fine encoding genetic algorithm is proposed to accelerate the parameter extraction. The proposed parameter extraction method not only avoids the problem of inaccurate element values that may be caused by artificially determining partial parameter values, but also omits the process of solving simultaneous equations. It can also avoid the problem of insufficient solution accuracy caused by the large order-of-magnitude difference between the values of equivalent circuit elements. Therefore, the quasi-empirical equivalent circuit model and the parameter extraction method accelerated by the coarse and fine encoding genetic algorithm proposed can achieve accurate and efficient modeling of devices.

本文提出了一种基于粗、精编码的遗传算法来辅助共面波导模型的参数提取方法。首先,提出了一个等效电路模型来准确表征共面波导的电特性参数。所提出的准经验等效电路模型不仅具有一定的物理意义,而且可以实现器件性能参数与尺寸结构参数之间非线性关系的求解。然后,基于所提出的共面波导半经验模型,提出了一种单步遗传算法来加速参数提取。在此基础上,提出了一种粗、精编码遗传算法来加速参数提取。所提出的参数提取方法不仅避免了人为确定部分参数值可能导致的元素值不准确的问题,而且省去了求解联立方程的过程。它还可以避免因等效电路元件的数值之间存在较大数量级差异而导致求解精度不足的问题。因此,提出的准经验等效电路模型和粗精编码遗传算法加速的参数提取方法可以实现对器件的准确高效建模。
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引用次数: 0
Performance Evaluation and Accelerated Optimization of 4H-SiC Power Devices Based on Neural Networks 基于神经网络的4H-SiC功率器件性能评估与加速优化
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-04 DOI: 10.1002/jnm.70109
Wei Li, Jiaxi Zhang, Fan Bi, Xuanlin Wang, Yucheng Wang, Shaoxi Wang

Compared to traditional technology computer-aided design (TCAD) simulations, using neural networks to predict semiconductor device performance does not face convergence problems. This advantage is particularly significant when simulating devices made of materials like silicon carbide (SiC), which exhibit complex physical behaviors, making them difficult to converge in simulations. In addition, traditional TCAD software lacks the capability to deduce device structural parameters from device performance metrics. This article selects four critical structural parameters of 4H-SiC trench gate MOS devices: trench depth (Dt), gate oxide thickness (Tox), drift region doping concentration (Nd), and P-region channel P-region length (L) as variables. Firstly, two types of neural network architectures were constructed and trained to serve as a classifier and a value predictor, respectively, among them, the breakdown mechanism classifier achieved an accuracy rate of 97% in the validation process. The average error of breakdown voltage prediction was 5.6%. In order to ensure the accuracy and stability of the prediction, we randomly selected 1000 sets of parameters within the value range for simulation to obtain a new dataset and improve the neural network structure. The improved neural network achieved average errors of 2.9% and 4.9% in the prediction of breakdown voltage and on-resistance, respectively. Subsequently, we built an optimizer based on the improved neural network, achieving an automated design process for device structural parameters according to target breakdown voltage and on-resistance. In the accuracy validation of the optimizer, the average error between target values and actual values of breakdown voltage and on-resistance is 2.5% and 7.9%, respectively.

与传统的计算机辅助设计(TCAD)模拟技术相比,使用神经网络预测半导体器件性能不会面临收敛问题。当模拟由碳化硅(SiC)等材料制成的设备时,这一优势尤为重要,因为碳化硅表现出复杂的物理行为,使得它们难以在模拟中收敛。此外,传统的TCAD软件缺乏从器件性能指标推断器件结构参数的能力。本文选取4H-SiC沟槽栅MOS器件的四个关键结构参数:沟槽深度(Dt)、栅极氧化物厚度(Tox)、漂移区掺杂浓度(Nd)和p区沟道p区长度(L)作为变量。首先,构建并训练了两种类型的神经网络架构,分别作为分类器和值预测器,其中,故障机制分类器在验证过程中准确率达到97%。击穿电压预测的平均误差为5.6%。为了保证预测的准确性和稳定性,我们在数值范围内随机选取1000组参数进行模拟,得到新的数据集,并改进神经网络结构。改进后的神经网络对击穿电压和导通电阻的预测平均误差分别为2.9%和4.9%。随后,我们基于改进的神经网络构建了优化器,实现了根据目标击穿电压和导通电阻自动设计器件结构参数的过程。在优化器的精度验证中,击穿电压和导通电阻的目标值与实测值的平均误差分别为2.5%和7.9%。
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引用次数: 0
Improved Nutcracker Optimization Algorithm and Its Application to Antenna and Array Designs 改进的胡桃夹子优化算法及其在天线和阵列设计中的应用
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-02 DOI: 10.1002/jnm.70100
Jinghui Zhu, Shaoxian Li, Peng Zhao, Gaofeng Wang

Metaheuristic algorithms play a crucial role in tackling the increasing complexity and challenges in antenna design. The nutcracker optimization algorithm (NOA), a novel metaheuristic inspired by nutcrackers' food-gathering, storing, searching, and retrieving behaviors, has shown excellent performance on 23 standard test functions and CEC—2014/2017/2020 test suites compared to well-established algorithms, yet it remains unapplied in antenna design. This study proposes a multi-strategy improved NOA (MINOA) to resolve NOA's unbalanced exploration and exploitation issues, applying it to ultra-wideband antenna design optimization and linear antenna array sidelobe suppression. MINOA employs Bernoulli chaotic mapping for uniform population initialization, a dynamic boundary strategy for balanced exploration and exploitation, and adaptive t-distribution disturbance to accelerate convergence and enhance local exploitation. Extensive tests on 23 benchmark functions prove MINOA's superiority in optimization accuracy, convergence speed, and stability over advanced algorithms such as NOA, WOA, GWO, SSA, DEA, SCSO, and HBMO. The Wilcoxon signed-rank test validates its significant improvement in accuracy. In broadband antenna optimization via an artificial neural network (ANN)-based surrogate model, MINOA reduces the mean square error (MSE) by 40.9% at the same iteration number and by 28.6% with 10 fewer iterations and 29 fewer fitness function calls compared to NOA during the preliminary training phase, achieving the widest bandwidth (3.62–11 GHz) among the eight algorithms. The Wilcoxon signed-rank test confirms MINOA's superiority. In the 16-element linear antenna array optimization, although MINOA performs slightly worse than DEA and WOA, it still achieves a low-sidelobe level of −41.38 dB, verifying its feasibility.

元启发式算法在解决日益复杂和挑战的天线设计中发挥着至关重要的作用。胡桃夹子优化算法(NOA)是一种受胡桃夹子食物采集、存储、搜索和检索行为启发的新型元启发式算法,与现有算法相比,它在23个标准测试函数和ec - 2014/2017/2020测试套件上表现优异,但在天线设计中仍未得到应用。本文提出了一种多策略改进的NOA (MINOA)方法,解决了NOA的不平衡勘探开发问题,并将其应用于超宽带天线设计优化和线性天线阵列副瓣抑制。MINOA采用伯努利混沌映射实现均匀种群初始化,采用动态边界策略实现均衡探索和开发,采用自适应t分布扰动加速收敛,增强局部开发。对23个基准函数的广泛测试证明,MINOA在优化精度、收敛速度和稳定性方面优于NOA、WOA、GWO、SSA、DEA、SCSO和HBMO等先进算法。Wilcoxon sign -rank检验验证了其准确性的显著提高。在基于人工神经网络(ANN)代理模型的宽带天线优化中,MINOA算法在相同迭代次数下的均方误差(MSE)降低了40.9%,在初始训练阶段比NOA算法减少了10次迭代和29次适应度函数调用,MSE降低了28.6%,实现了8种算法中最宽的带宽(3.62-11 GHz)。Wilcoxon sign -rank检验证实了MINOA的优越性。在16元线性天线阵优化中,MINOA虽然性能略差于DEA和WOA,但仍然达到了−41.38 dB的低旁瓣电平,验证了其可行性。
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引用次数: 0
Haar Wavelet Method for the Solution of Fourteenth Order Boundary Value Problems 十四阶边值问题的Haar小波解法
IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-02 DOI: 10.1002/jnm.70104
Rohul Amin, Imran Khan, Şuayip Yüzbaşı

Higher-order boundary value problems (BVP) of differential equations (DEs) are important in the mathematical description of many real-world processes. Solving such problems for exact or analytical solutions is not always easy to deal. Therefore, to compute their numerical solution, we need some numerical methods. Hence, in this work, a powerful numerical procedure based on Haar Wavelet (HW) method is established to deal with fourteenth-order BVPs linear and nonlinear. A generalized form of the algorithm is developed under general boundary conditions. Then the numerical method is verified on various examples from the literature. Also, maximum and root mean square errors are calculated. Moreover, a comparison between exact and numerical results is shown at different collocation points. Furthermore, convergence rate is approximately 2 at various numbers of nodal points is also calculated.

微分方程的高阶边值问题(BVP)在许多现实过程的数学描述中具有重要意义。用精确的或解析的方法解决这类问题并不总是容易的。因此,为了计算它们的数值解,我们需要一些数值方法。因此,本文建立了一种基于Haar小波(HW)方法的有效的十四阶bvp线性和非线性数值处理方法。在一般边界条件下,给出了该算法的广义形式。然后用文献中的各种算例对数值方法进行了验证。同时,计算最大误差和均方根误差。此外,在不同的配点处,给出了精确结果与数值结果的比较。此外,还计算了不同节点数下的收敛速率近似为2。
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引用次数: 0
期刊
International Journal of Numerical Modelling-Electronic Networks Devices and Fields
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