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Combination of Boundary Elements and the Ellipsoid Method for Optimizing the Electromagnetic Fields of Overhead Power Lines 结合边界元和椭球法优化架空电力线电磁场
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-06 DOI: 10.1002/jnm.3319
B. A. M. Duane, M. M. Afonso, A. L. Paganotti, M. A. O. Schroeder, R. R. Saldanha

This study proposes a numerical approach aimed at mitigating electromagnetic field intensities at ground level generated by overhead power lines. The methodology integrates the boundary element method for field evaluation with the ellipsoid method for field optimization, while adhering to critical design and safety constraints. The optimized power line configurations, derived from this integrated approach, achieved significant reductions in both electric and magnetic field magnitudes at ground level without compromising any specified constraints. Moreover, the research findings demonstrate the robustness, efficiency, and practical applicability of the proposed methodology in the design of optimized power lines, offering potential for increased power transfer capability, and decreased environmental and health impacts.

本研究提出了一种数值方法,旨在减轻架空电线在地面产生的电磁场强度。该方法将用于电场评估的边界元法与用于电场优化的椭球体法相结合,同时遵守关键的设计和安全限制。从这种综合方法中得出的优化电力线配置可显著降低地面的电场和磁场幅值,而不会损害任何指定的约束条件。此外,研究成果还证明了所提方法在优化电力线设计中的稳健性、效率和实际应用性,为提高电力传输能力、减少环境和健康影响提供了可能。
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引用次数: 0
Research on Metallic Spheres Radius Classification Method Using Machine Learning With Eddy Current Testing 利用机器学习和涡流测试对金属球半径分类方法的研究
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-11-06 DOI: 10.1002/jnm.3317
Huilin Zhang, Wenkai Li, Qian Zhao, Zihan Xia, Yuxin Shi, Wuliang Yin

Metallic spheres play a crucial role in industry and their accurate measurement is essential to ensure the safety of industrial production. Eddy current testing (ECT), which is non-contact and non-invasive, provides an efficient and precise approach for the parameter evaluation of metallic spheres. In this paper, we utilize machine learning (ML) methods to invert inductive signals in order to address the inverse problem of ECT, with the aim of reconstructing the radius of a metallic sphere. Datasets containing the radius information of the metallic sphere were constructed based on the simplified analytical solution. The datasets were divided into two parts based on the real part (RP) and imaginary part (IP) features, and the connection between the two features and the radius of the metallic sphere were compared by five classification models. While achieving accurate classification of aluminum and stainless steel spheres with different radius, the models are evaluated to ensure the reliability and validity of the models. The results show that the use of IP data as a classification feature has better accuracy as compared to RP. The K nearest neighbor (KNN) radius classifier has the highest accuracy of 95.5% in aluminum spheres and the random forest (RF) radius classifier has the highest accuracy of 95.9% in stainless steel spheres. In addition, all five classifiers are able to overcome the effect of lift-off on the classification results.

金属球在工业中起着至关重要的作用,对其进行精确测量是确保工业生产安全的关键。涡流检测(ECT)具有非接触、非侵入的特点,为金属球的参数评估提供了一种高效、精确的方法。在本文中,我们利用机器学习(ML)方法反转电感信号,以解决 ECT 的逆问题,目的是重建金属球的半径。根据简化的解析解构建了包含金属球半径信息的数据集。根据实部(RP)和虚部(IP)特征将数据集分为两部分,并通过五个分类模型比较了这两个特征与金属球半径之间的联系。在对不同半径的铝球和不锈钢球进行准确分类的同时,对模型进行了评估,以确保模型的可靠性和有效性。结果表明,与 RP 相比,使用 IP 数据作为分类特征具有更好的准确性。K 近邻(KNN)半径分类器对铝球的分类准确率最高,达到 95.5%;随机森林(RF)半径分类器对不锈钢球的分类准确率最高,达到 95.9%。此外,这五种分类器都能克服升降对分类结果的影响。
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引用次数: 0
Subthreshold Drain Current Model of Cylindrical Gate All-Around Junctionless Transistor With Three Different Gate Materials 采用三种不同栅极材料的圆柱栅全能无结晶体管的阈下漏电流模型
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-27 DOI: 10.1002/jnm.3312
S. Manikandan, P. Suveetha Dhanaselvam, M. Karthigai Pandian

A novel subthreshold drain current model has been developed for a cylindrical gate all-around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectively reduce the short-channel effects caused by quantum mechanical effects. The drain current equation is solved for all three operating regions to investigate the device switching characteristics and minimize the drain-induced barrier lowering (DIBL), velocity saturation, mobility degradation, and tunneling. It is understood that the triple material gate structure enhances the transport efficiency of the device. The proposed analytical model is validated by comparison with Sentaurus TCAD numerical simulator results and good agreement is found to be achieved.

针对具有三种不同栅极材料的圆柱形栅极全方位无结晶体管,开发了一种新颖的阈下漏极电流模型。所提出的器件具有三个工作函数不同的栅极区,可有效减少量子力学效应引起的短沟道效应。对所有三个工作区的漏极电流方程进行了求解,以研究器件的开关特性,并最大限度地减少漏极诱导势垒降低(DIBL)、速度饱和、迁移率下降和隧道效应。据了解,三材料栅极结构提高了器件的传输效率。通过与 Sentaurus TCAD 数值模拟器的结果进行比较,验证了所提出的分析模型,并发现两者达到了良好的一致性。
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引用次数: 0
Hybrid TLM-CTLM Test Structure for Determining Specific Contact Resistivity of Ohmic Contacts 用于测定欧姆触点比接触电阻率的混合 TLM-CTLM 测试结构
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-26 DOI: 10.1002/jnm.3310
Pan Yue, Thanh Pham Chi, Anthony Holland

Various test structures can be used to determine the specific contact resistivity of ohmic contacts. The transmission line model test structure and circular transmission line model test structure are the most commonly used. The analytical expressions of the former are straightforward and effectively describe the electrical behaviour of a contact, while the concentric geometry of the latter eliminates complications during fabrication. In this article, we present a hybrid test structure that combines the advantages of the transmission line and the circular transmission line models. The analytical expressions of the new structure are presented, and its finite-element modelling is undertaken. The effect of contact geometry on this test structure is also discussed. Using the presented test structure, determining contact parameters does not require any error corrections.

有多种测试结构可用于确定欧姆触点的比接触电阻率。最常用的是传输线模型试验结构和圆形传输线模型试验结构。前者的分析表达式简单明了,能有效描述触点的电气特性,而后者的同心几何结构则消除了制造过程中的复杂性。在本文中,我们提出了一种混合测试结构,它结合了传输线模型和环形传输线模型的优点。文章给出了新结构的分析表达式,并对其进行了有限元建模。此外,还讨论了接触几何形状对该测试结构的影响。使用所介绍的测试结构,确定接触参数不需要任何误差修正。
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引用次数: 0
Optimal Design of Smart Antenna Arrays for Beamforming, Direction Finding, and Null Placement Using the Soft Computing Method 利用软计算方法优化智能天线阵列的波束成形、测向和空位放置设计
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-26 DOI: 10.1002/jnm.3302
Avishek Chakraborty, Aishwarya Mishra, Indrasen Singh, Saif Ahmad, Mohd Javed Khan, Deepti Sharma, Ahmed Alkhayyat, Sumit Gupta

The urge of modern communication system is to design and development of the smart antennas with adaptive radiation characteristics. The multifold capabilities of fourth-dimensional antenna arrays can cater that much needed adaptiveness if properly designed. Compared to the conventional arrays, the fourth-dimensional arrays have one added advantage as the ‘Time’ of all the switched-on antenna elements can be managed to generate the required amplitude and phase tapering without even using attenuators and phase shifters. However, one inherent limitation of fourth-dimensional control parameter is the generation of harmonics or sidebands. This article proposes various means of radiation pattern synthesis in fourth-dimensional linear antenna arrays with pulse shifting, pulse splitting, and a combination of both. First of all, the pulse splitting and shifting techniques are combinedly proposed by reducing the sidelobe levels and sideband levels of the beamforming antenna arrays to enhance directivities and efficiencies. Then, this mathematical proposition of the direction finding fourth-dimensional arrays is developed. Finally, broad nulls over a specific angle of arrival region are created for jamming and interference mitigation. For all these cases, the sidelobe level and the unwanted higher-order sideband levels are suppressed to reduce the unwanted interferences and power losses. The optimal time schemes for all the synthesized patterns are generated by proposing a chaos-based soft computing algorithm. The radiofrequency signals at each radiating array element are processed by the optimal time schemes proposed for specific applications. The outcomes are validated and compared with other state-of-the-art works of this domain to prove the competency of the proposed work. The qualitative and quantitative comparisons presented for beamforming array is aimed for a good improvement over other reported works by targeting ultralow (less than −40 dB) sidelobe and sideband levels. For direction-finding array, the proposed idea has also targeted ultralow sidelobes for the main as well as steered beam patterns. Furthermore, the null placement over a region has been aimed to cover more area for jamming and sidelobe reduction for interference mitigation. Overall, the optimal designs proposed for these advanced applications are beneficial for cutting-edge communication systems.

现代通信系统迫切需要设计和开发具有自适应辐射特性的智能天线。如果设计得当,四维天线阵列的多重功能可以满足这种急需的适应性。与传统阵列相比,四维阵列有一个额外的优势,即所有开启的天线元件的 "时间 "都可以管理,以产生所需的振幅和相位渐变,甚至无需使用衰减器和移相器。然而,四维控制参数的一个固有限制是会产生谐波或边带。本文提出了四维线性天线阵列辐射模式合成的各种方法,包括脉冲移动、脉冲分裂以及两者的结合。首先,通过降低波束成形天线阵列的边带电平和侧带电平,综合提出了脉冲分割和移位技术,以提高指向性和效率。然后,提出了第四维天线阵列的测向数学命题。最后,创建特定到达角区域的宽空域,以减少干扰。在所有这些情况下,都会抑制边带电平和不需要的高阶边带电平,以减少不需要的干扰和功率损耗。所有合成模式的最佳时间方案都是通过提出一种基于混沌的软计算算法生成的。每个辐射阵列元件上的射频信号都是通过针对特定应用提出的最佳时间方案进行处理的。这些结果经过验证,并与该领域其他最先进的作品进行了比较,以证明所提议的工作的能力。针对波束成形阵列的定性和定量比较旨在通过超低(小于-40 dB)的边音和边带水平,对其他已报道的作品进行良好的改进。对于测向阵列,所提出的想法也以主波束和转向波束模式的超低边带为目标。此外,在一个区域内放置空点的目的是覆盖更多区域,以减少干扰和降低侧叶。总之,为这些先进应用提出的优化设计有利于尖端通信系统。
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引用次数: 0
A Nonlinear Model of RF Switch Device Based on Common Gate GaAs FETs 基于共栅极砷化镓场效应晶体管的射频开关器件非线性模型
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-24 DOI: 10.1002/jnm.3308
Changsi Wang, Yan Wang, Xin Kong

This paper presents a novel method for nonlinear modeling GaAs field-effect transistors (FETs) in a common gate (CG) configuration, which is crucial for the effective design and thorough assessment of RF switch circuits. By focusing solely on a CG-based GaAs FET for RF switch device characterization and modeling, the modeling process is streamlined compared to traditional methods that involve both CG and common source (CS) devices. The direct measurement of both DC and RF characteristics using the CG device enhances the accuracy of model parameter extraction. This approach ensures consistency in model and simulation applications as the CG topology aligns with devices commonly found in RF switch circuits. Moreover, to enhance predictive accuracy regarding the dispersion effect, an improved equation of drain-source current has been incorporated. The empirical validation of the model reveals good agreements in terms of insertion loss, isolation, and output power performance for the CG GaAs FET device, including a wide band single-pole double-throw (SPDT) switch Monolithic Microwave Integrated Circuit (MMIC).

本文提出了一种对共栅极(CG)配置的砷化镓场效应晶体管(FET)进行非线性建模的新方法,这对于有效设计和全面评估射频开关电路至关重要。在射频开关器件特征描述和建模中,只关注基于共栅极的砷化镓场效应晶体管,与同时涉及共栅极和共源(CS)器件的传统方法相比,简化了建模过程。使用 CG 器件直接测量直流和射频特性,提高了模型参数提取的准确性。这种方法确保了模型和仿真应用的一致性,因为 CG 拓扑与射频开关电路中常见的器件一致。此外,为了提高对色散效应的预测精度,还加入了改进的漏源电流方程。模型的经验验证表明,CG GaAs FET 器件(包括宽带单刀双掷 (SPDT) 开关单片微波集成电路 (MMIC))在插入损耗、隔离度和输出功率性能方面表现良好。
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引用次数: 0
Analysis of etched drain based Cylindrical agate-all-around tunnel field effect transistor based static random access memory cell design 基于蚀刻漏极的圆柱形琼脂环绕隧道场效应晶体管静态随机存取存储器单元设计分析
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-22 DOI: 10.1002/jnm.3296
Ankur Beohar, Ribu Mathew, Darshan Sarode, Abhishek Kumar Upadhyay, Kavita Khare

This paper aims to propose a novel method for designing an static random access memory (SRAM) cell using an etched drain based Cyl GAA TFET with a hetero-substrate material and an elevated density strip. The aim is to reduce power dissipation and improve stability, as demonstrated through analysis utilizing static noise margin (SNM) as well as N-curve methods. With respect to the 16 nm MOSFET based SRAM cell, the proposed device-based SRAM cell shows significant improvements with a 68.305% reduction in leakage power, a 15.58% increase in static voltage noise margin (SVNM), an 8.623% increase in static current noise margin (SINM), an 8.152% increase in write trip voltage (WTV), a 12.86% increase in write trip current (WTI), a 27.62% increase in static power noise margin (SPNM), and a 19.95% increase in write trip power (WTP). The design is implemented and analyzed using Cadence Virtuoso software, and a novel approach of look up tables and Verilog A is utilized for the device to circuit application. These results indicate promising advancements in the design of SRAM cells, which could have significant implications for the development of advanced computer systems.

本文旨在提出一种设计静态随机存取存储器 (SRAM) 单元的新方法,该方法采用了基于蚀刻漏极的 Cyl GAA TFET,具有异质基底材料和高密度条带。通过利用静态噪声裕量(SNM)和 N 曲线方法进行分析,证明了该方法的目的是降低功耗和提高稳定性。与基于 16 nm MOSFET 的 SRAM 单元相比,所提出的基于器件的 SRAM 单元有了显著改进,泄漏功率降低了 68.305%,静态电压噪声裕度 (SVNM) 增加了 15.58%,静态电流噪声裕度增加了 8.623%。静态电流噪声裕量 (SINM) 增加了 8.623%,写入跳闸电压 (WTV) 增加了 8.152%,写入跳闸电流 (WTI) 增加了 12.86%,静态功率噪声裕量 (SPNM) 增加了 27.62%,写入跳闸功率 (WTP) 增加了 19.95%。该设计使用 Cadence Virtuoso 软件实现和分析,并在器件到电路的应用中采用了查找表和 Verilog A 的新方法。这些结果表明,SRAM 单元的设计有望取得进展,这对先进计算机系统的开发具有重大意义。
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引用次数: 0
Numerical Analysis and Design of a High-Frequency Surface Acoustic Wave Transducer: Influence of Piezoelectric Substrates and IDTs Configurations 高频表面声波传感器的数值分析与设计:压电基板和 IDT 配置的影响
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-14 DOI: 10.1002/jnm.3306
Alonso Fernández-García, Verónica Iraís Solís-Tinoco, Miguel Ángel Alemán Arce, Luis Alfonso Villa-Vargas, Marco Antonio Ramírez Salinas, Juan Carlos Sánchez García
<div> <p>The development of SAW transducers requires a series of steps ranging from material selection and geometry design to the selection of fabrication techniques for their characterization and validation process. Here, we use the finite element method (FEM) to present a methodology and a detailed analysis of the design of SAW transducers in a delay line configuration. First, we simulate single-finger and double-finger configurations with different geometries and designs of IDTs on two piezoelectric substrates, LiNbO<span></span><math> <semantics> <mrow> <msub> <mrow></mrow> <mn>3</mn> </msub> </mrow> <annotation>$$ {}_3 $$</annotation> </semantics></math> in 64<span></span><math> <semantics> <mrow> <msup> <mrow></mrow> <mo>°</mo> </msup> </mrow> <annotation>$$ {}^{{}^{circ}} $$</annotation> </semantics></math> YX and LiNbO<span></span><math> <semantics> <mrow> <msub> <mrow></mrow> <mn>3</mn> </msub> </mrow> <annotation>$$ {}_3 $$</annotation> </semantics></math> 128<span></span><math> <semantics> <mrow> <msup> <mrow></mrow> <mo>°</mo> </msup> </mrow> <annotation>$$ {}^{{}^{circ}} $$</annotation> </semantics></math> YX orientation, to compare the simulation results with the analytical delta model and thereby validate the simulation process, presenting Root Mean Square Error (RMSE) values ranging from 10.79 dB to 16.42 dB. With the above, we performed a comparative analysis to determine the influence of piezoelectric material and IDT configuration by studying a specific transducer design made to operate at a resonance frequency of 97.02 MHz. We compared identical designs on 128<span></span><math> <semantics> <mrow> <msup> <mrow></mrow> <mo>°</mo> </msup> </mrow> <annotation>$$ {}^{{}^{circ}} $$</annotation> </semantics></math> YX and 64<span></span><math> <semantics> <mrow> <msup> <mrow></mrow> <mo>°</mo> </msup> </mrow> <annotation>$$ {}^{{}^{circ}} $$</annotation> </semantics></math> YX orientations of LiNbO<span></span><math> <semantics> <mrow> <msub> <mrow></mrow> <mn>3</
声表面波传感器的开发需要一系列步骤,从材料选择、几何设计到表征和验证过程中的制造技术选择。在此,我们使用有限元法(FEM)介绍了一种方法,并详细分析了延迟线配置中声表面波传感器的设计。首先,我们在两种压电基底(64 ° $$ {}^{{}^{/circ}$ 的 LiNbO 3 $$ {}_3 $$)上模拟了具有不同几何形状和 IDT 设计的单指和双指配置。$YX 和 LiNbO 3 $$ {}_3 $$ 128 ° $$ {}^{}^{circ}}$$ YX 方向,将模拟结果与分析三角模型进行比较,从而验证模拟过程,结果显示均方根误差 (RMSE) 值在 10.79 dB 到 16.42 dB 之间。有鉴于此,我们进行了一项比较分析,通过研究在 97.02 MHz 共振频率下工作的特定传感器设计,确定压电材料和 IDT 配置的影响。我们比较了 128 ° $$ {}^{}^{circ}} YX 和 64 ° $$ {}^{}^{circ}} YX 上的相同设计。YX 和 64 °$ {}^{}^{circ}} 的相同设计进行了比较。YX 取向的铌酸锂 3 $$ {}_3 $$,采用单指和双指配置,并增加了与 SPUDT 配置的比较。我们观察到单指 IDT 配置在 128 ° $$ {}^{}^{circ}} $$ YX LiNbO 3 的最佳结果。$$ YX LiNbO 3 $$ {}_3 $$ 方向的单指 IDT 配置与其他变体相比,插入损耗水平为 -7.29 dB,平均边瓣水平为 -18.63 dB,主瓣的平均过渡带斜率为 15.09 dB/MHz。这些结果为新研究人员或学生在设计声表面波传感器和声表面波器件时扩大数值工具的使用范围提供了指导。
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引用次数: 0
Effective Electromagnetic Properties of Composite Material Computed From Neural Network Approach 用神经网络方法计算复合材料的有效电磁特性
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-09 DOI: 10.1002/jnm.3303
Abelin Kameni, Den Palessonga, Zahraa Semmoumy, Mohamed Bensetti

Thanks to their lightweight, composite materials have become widely used in the automotive and aerospace industries. The design of components made from these materials is carried out by numerical modeling which can sometimes be tedious because of the need to take into account the internal structure of these materials. Obtaining the effective properties of an equivalent homogeneous material to replace the composite in our numerical models makes modeling easier. Classical homogenization approaches are not always suitable to obtain these effective properties. This article deals with an inverse problem that consists in computing the electromagnetic properties from the knowledge of the magnetic shielding effectiveness values. For different composite samples, an artificial neural network method is used to predict the effective conductivities from the magnetic shielding effectiveness measurements. The magnetic shielding effectiveness values computed from the predicted conductivities are close to those obtained from the measurements.

由于重量轻,复合材料已广泛应用于汽车和航空航天工业。由于需要考虑这些材料的内部结构,用这些材料制成的部件的设计工作有时需要通过数值建模来完成,因此建模工作十分繁琐。获取等效均质材料的有效特性来替代我们数值模型中的复合材料,会使建模变得更加容易。经典的均质化方法并不总是适合获得这些有效特性。本文讨论的是一个逆问题,即根据磁屏蔽效能值计算电磁特性。对于不同的复合材料样品,采用人工神经网络方法从磁屏蔽效能测量值预测有效电导率。根据预测电导率计算出的磁屏蔽效能值与测量值相近。
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引用次数: 0
Guest Editorial for the Special Issue on “Recent Advances in Simulation Methods, Modelling Approaches, and Physical Implementation of Fractional-Order Devices, Circuits, and Systems” 分数阶器件、电路和系统的仿真方法、建模方法和物理实现的最新进展 "特刊客座编辑
IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-10-09 DOI: 10.1002/jnm.3305
Jesus M. Munoz-Pacheco, Viet-Thanh Pham
<p>Fractional calculus (FC) is currently associated with phenomena modeling that shows nonlocality and long memory effects in physics and engineering. In particular, the fractional-order operators provide an excellent approach to representing a physical phenomenon with improved accuracy because they capture the contributions from all past events contrary to classical calculus, whose nature is only local. For those reasons, the fractional order can be used as an extra degree of freedom to improve practical applications in various fields, such as analog and digital circuits, chaos theory, electronic devices, cryptography, control, signal processing, robotics, theory of filters, biology, wind turbines, viscoelastic studies, ferromagnetic materials, and so on. From a science and engineering point of view, there are still open problems in fractional calculus, ranging from numerical aspects and modeling techniques to the design and implementation of devices, circuits, and systems. For instance, optimized simulation methods are still needed to compute a proper solution considering the whole memory contributions of fractional operators but simultaneously reducing the computational effort. Classical fractional calculus definitions, as well as new operators (fractional-fractal, fractional operators in the complex plane, variable order calculus, etc.), should continue being explored to obtain novel models of physical phenomena at different levels of abstraction and descriptions, such as physical, circuit, macro, behavioral, and functional. In fractional-order devices, circuits, and systems, one of the challenges consists of implementing the fractional integrodifferential operator as integrators and derivators in the frequency domain, that is, <span></span><math> <semantics> <mrow> <msup> <mi>s</mi> <mi>α</mi> </msup> </mrow> <annotation>$$ {s}^{alpha } $$</annotation> </semantics></math> <span></span><math> <semantics> <mrow> <mi>α</mi> <mo>∈</mo> <mi>R</mi> </mrow> <annotation>$$ alpha in R $$</annotation> </semantics></math> using approximation methods aiming for flexible and non-bulky realizations as there is no fabricated fractional-order capacitor yet commercially available.</p><p>The papers in this special issue are devoted to stimulating new ideas and methods and enabling the extension of numerous applications using fractional-order devices, circuits, and systems. High-quality contributions to numerical modeling, design, optimization, and implementation of devices and systems have been reported. In the paper “Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices [<span>1</span>],”
目前,分数微积分(FC)与物理学和工程学中显示非局部性和长记忆效应的现象建模有关。特别是,分数阶算子提供了一种以更高精度表示物理现象的绝佳方法,因为与经典微积分不同,分数阶算子捕捉到了所有过去事件的贡献,而经典微积分的性质只是局部的。因此,小数阶可以作为一种额外的自由度,用于改进各个领域的实际应用,如模拟和数字电路、混沌理论、电子设备、密码学、控制、信号处理、机器人学、滤波器理论、生物学、风力涡轮机、粘弹性研究、铁磁材料等。从科学和工程的角度来看,分数微积分仍有许多未解决的问题,从数值方面和建模技术到设备、电路和系统的设计与实现,不一而足。例如,仍然需要优化的模拟方法来计算适当的解决方案,既要考虑到分数算子的整个内存贡献,又要减少计算量。应继续探索经典的分数微积分定义以及新的算子(分数-分数、复平面中的分数算子、变阶微积分等),以便在不同的抽象和描述层次(如物理、电路、宏观、行为和功能)上获得物理现象的新模型。在分数阶器件、电路和系统中,面临的挑战之一是如何在频域中将分数积分微分算子作为积分器和导数器来实现,即 s α $$ {s}^{alpha } $ α∈ R$ α∈ R$ {s}^{alpha }。本特刊中的论文致力于激发新思路和新方法,使分数阶器件、电路和系统的众多应用得以扩展。本特刊中的论文致力于激发新思路、新方法,并使分数阶器件、电路和系统的应用得以扩展。这些论文对器件和系统的数值建模、设计、优化和实现做出了高质量的贡献。在题为 "GaN HEMT 器件上铁电材料的滞后效应导致的分数阶电容行为[1]"的论文中,Pyngrope 等人利用 Grünwald-Letnikov 导数引入了一种新型分数阶电容模型。该研究特别适用于氮化镓 HEMT(氮化镓(GaN))--高电子迁移率晶体管中氮化铝钪(AlScN)栅极电容的复杂性质,氮化镓 HEMT 已成为半导体行业的前沿技术。大量误差指标证明了所提模型的准确性,为准确表征 GaN HEMT 电容建立了一个强大的机制。在论文 "Fractional-calculus analysis of the dynamics of typhoid fever with the effect of vaccination and carriers [2]"中,Jan 等人通过 Caputo-Fabrizio 算子提出了一种新颖的伤寒流行病模型,其中包括疫苗接种和带菌者,以尽量减少每年影响大量人口的全球公共卫生问题。研究结果凸显了分数阶描述拟议模型中记忆效应的有效性。在论文 "Design and performance analysis of 8-port multi-service quad-band MIMO antenna for automotive communication [3]"(用于汽车通信的 8 端口多业务四频 MIMO 天线的设计和性能分析[3])中,Arumugam 等人提出了一种用于汽车通信的具有极化分集原理的低剖面紧凑型 8 端口多频段天线。在论文 "Advanced tree-seed optimization based fractional-order PID controller design for simplified decoupled industrial tank systems [4]"中,Rajagopalan 等人通过考虑非线性动力学、时间延迟、不确定性和交叉耦合效应,分析了耦合罐系统的多种问题。因此,该研究采用了分数阶比例-积分-派生(FOPID)控制器来调节耦合罐系统的液位。此外,还使用树种子算法对控制器进行了优化。
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International Journal of Numerical Modelling-Electronic Networks Devices and Fields
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