Pub Date : 2024-07-24DOI: 10.1088/1402-4896/ad671e
A. Mota, Francisco César Sá Barreto
Correlation identities are obtained for a $Z_3$ lattice gauge theory where the bonds of the plaquettes are decorated by generalized three-state Ising variables. Making use of correlation inequalities, we obtain rigorous bounds to the area decay of the Wilson loop observable in a range of the coupling parameter larger than those obtained from mean field theory considerations.
{"title":"Correlation equalities and some upper bounds for the coupling constant implying area decay of Wilson loop for Z3 lattice gauge theories","authors":"A. Mota, Francisco César Sá Barreto","doi":"10.1088/1402-4896/ad671e","DOIUrl":"https://doi.org/10.1088/1402-4896/ad671e","url":null,"abstract":"\u0000 Correlation identities are obtained for a $Z_3$ lattice gauge theory where the bonds of the plaquettes are decorated by generalized three-state Ising variables. Making use of correlation inequalities, we obtain rigorous bounds to the area decay of the Wilson loop observable in a range of the coupling parameter larger than those obtained from mean field theory considerations.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"56 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141807606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1088/1402-4896/ad671c
Y. Ou, P. Wei
This study presents a challenging analysis of interfacial equilibrium conditions that control the evolution of lotus-type pores in both metals and nonmetals during solidification. It incorporates Henry’s or Sieverts’ law, affecting solute transfer at the cap and top free surface, and pore evolution. The significance of the directional and lightweight characteristics of lotus-type porous materials makes them vitally important in functional heat sinks, energy absorption, biomedical devices, and other applications. The study extends previous solute transfer models based on solute concentration deviations in the liquid from the top surface and convection-affected segregation at the advancing liquid-solid interface by further considering the effects of interfacial equilibrium conditions on pore development. Typical data selected for the dimensionless Henry’s law constant at the cap and top free surface is 0.175, while the Sieverts’ law constant at the cap and top free surface is 0.03. MATLAB Simulink and Simscape (version R2020b) with the solver ode113 are utilized to solve the resulting simultaneous system of unsteady first-order differential equations. The results show that the size of lotus-type pores increases as the Henry’s law constant at the cap decreases while the Henry's law constant at the top free surface increases. Similar results are observed for Sieverts’ law. Lotus-type pores readily form as the Henry’s law constant at the cap increases while that at the top free surface decreases. The lotus pore length can also be determined and interpreted algebraically using solute content conservation. The model's predictions closely match analytical findings previously validated by experimental data.
{"title":"Interfacial physico-chemical equilibrium control of lotus-type pore formation in solid","authors":"Y. Ou, P. Wei","doi":"10.1088/1402-4896/ad671c","DOIUrl":"https://doi.org/10.1088/1402-4896/ad671c","url":null,"abstract":"\u0000 This study presents a challenging analysis of interfacial equilibrium conditions that control the evolution of lotus-type pores in both metals and nonmetals during solidification. It incorporates Henry’s or Sieverts’ law, affecting solute transfer at the cap and top free surface, and pore evolution. The significance of the directional and lightweight characteristics of lotus-type porous materials makes them vitally important in functional heat sinks, energy absorption, biomedical devices, and other applications. The study extends previous solute transfer models based on solute concentration deviations in the liquid from the top surface and convection-affected segregation at the advancing liquid-solid interface by further considering the effects of interfacial equilibrium conditions on pore development. Typical data selected for the dimensionless Henry’s law constant at the cap and top free surface is 0.175, while the Sieverts’ law constant at the cap and top free surface is 0.03. MATLAB Simulink and Simscape (version R2020b) with the solver ode113 are utilized to solve the resulting simultaneous system of unsteady first-order differential equations. The results show that the size of lotus-type pores increases as the Henry’s law constant at the cap decreases while the Henry's law constant at the top free surface increases. Similar results are observed for Sieverts’ law. Lotus-type pores readily form as the Henry’s law constant at the cap increases while that at the top free surface decreases. The lotus pore length can also be determined and interpreted algebraically using solute content conservation. The model's predictions closely match analytical findings previously validated by experimental data.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"41 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141809379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1088/1402-4896/ad671a
Juan F. Mañas–Mañas, Juan José Moreno Balcázar, Cristina Rodríguez-Perales
We investigate the asymptotic behavior of the zeros of some Meijer $G$--functions. To achieve this, we analyze the Mehler--Heine asymptotics for these $G$--functions. The findings are then illustrated through numerical experiments.
{"title":"Mehler-Heine asymptotics and zeros of some Meijer G–functions","authors":"Juan F. Mañas–Mañas, Juan José Moreno Balcázar, Cristina Rodríguez-Perales","doi":"10.1088/1402-4896/ad671a","DOIUrl":"https://doi.org/10.1088/1402-4896/ad671a","url":null,"abstract":"\u0000 We investigate the asymptotic behavior of the zeros of some Meijer $G$--functions. To achieve this, we analyze the Mehler--Heine asymptotics for these $G$--functions. The findings are then illustrated through numerical experiments.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"36 24","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141809955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-24DOI: 10.1088/1402-4896/ad6719
Yaxin Wang, Chao Gao, Chaoxiang Yang, Tingting Yang, Yan Liu, Ye Ma, Xiaoning Ren, Yao Cai, Chengliang Sun
Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Qm from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.
{"title":"High-Q film bulk acoustic resonator with high quality AlN film based on transfer method","authors":"Yaxin Wang, Chao Gao, Chaoxiang Yang, Tingting Yang, Yan Liu, Ye Ma, Xiaoning Ren, Yao Cai, Chengliang Sun","doi":"10.1088/1402-4896/ad6719","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6719","url":null,"abstract":"\u0000 Thin film bulk acoustic resonator (FBAR) with high quality factor (Q) is preferred for many communication applications. AlN film deposited in conventional FBAR fabrication process is poor, resulting in unsatisfactory device performance. This study demonstrated the comparison of two Si-substrate FBARs, adopting the same AlN deposition process by physical vapor deposition (PVD) method, however using different device fabrication method. Instead of depositing AlN film on Mo/SiO2/Si substrate in existing fabrication process, we deposited AlN directly on Si substrate by PVD to get better crystal quality piezoelectric layer of the FBAR. The full width at half maximum (FWHM) of rocking curve and surface roughness of AlN directly deposited on Si substrate are 1.4° and 1.96 nm, while those of AlN deposited on Mo/SiO2/Si substrate are 8.5° and 5.54 nm, respectively, indicating AlN deposited directly on Si substrate has a better crystal quality than that on Mo/SiO2/Si substrate. The dielectric loss of FBAR using AlN developed on Si substrate decreases from 0.4 Ω to 0.11 Ω leading to the increase of Qm from 470 to 830. By preserving the high quality AlN deposited on Si substate with film transfer method, the FBAR device enjoys an increasing of Q-values as high as 76%.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"96 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141808078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad6697
Yanwei Yang, Zhouyu Tong, X. Pi, Deren Yang, Yuanchao Huang
Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are finally outlined.
{"title":"Advances and challenges in 4H silicon carbide: defects and impurities","authors":"Yanwei Yang, Zhouyu Tong, X. Pi, Deren Yang, Yuanchao Huang","doi":"10.1088/1402-4896/ad6697","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6697","url":null,"abstract":"\u0000 Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are finally outlined.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"18 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141809940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad6694
Pengxiao Guo, H. Du, Jianshe Li, Yuxin Li, Shuguang Li, Zhiyong Yin, Ruiduo Wang, K. Li, Hongwei Li, Xingwei Li
This article proposes a curling pot shaped photonic crystal fiber (PCF) sensor based on surface plasmon resonance (SPR), which utilizes two parallel polished surfaces in the cladding to achieve dual parameter measurements of liquid refractive index (RI) and temperature. The mode characteristics and sensing performance of the designed PCF sensor are studied using the finite element method, and the effects of changes in structural parameters such as pore radius, spacing, and gold film thickness on the resonance spectrum are analyzed. The sensing accuracy of the sensor is insensitive to the change of structural parameters, and it has the characteristics of a wide detection range, high sensitivity, and easy manufacture. When the liquid RI is in a wide range of 1.33-1.42, the RI sensitivity up to 20400 nm/RIU is obtained. When the temperature is within a wide range of -10 °C -100 °C, a temperature sensitivity of up to 15.4 nm/°C is achieved. The tight structure design of the sensor core close to the polishing surface and the anti-spill light design with a uniform arrangement of air holes enhance the SPR effect, which is the essential reason for achieving a wide detection range and high sensitivity.
本文提出了一种基于表面等离子体共振（SPR）的卷曲锅形光子晶体光纤（PCF）传感器，利用包层中两个平行的抛光表面实现液体折射率（RI）和温度的双参数测量。利用有限元法研究了所设计的 PCF 传感器的模式特性和传感性能，并分析了孔隙半径、间距和金膜厚度等结构参数的变化对共振频谱的影响。该传感器的传感精度对结构参数的变化不敏感，具有检测范围宽、灵敏度高、易于制造等特点。当液体 RI 在 1.33-1.42 宽范围内时，RI 灵敏度可达 20400 nm/RIU。当温度在 -10 °C -100 °C 宽范围内时，温度灵敏度可达 15.4 nm/°C。传感器核心紧贴抛光表面的紧密结构设计和气孔均匀排列的防溢光设计增强了 SPR 效应，这是实现宽检测范围和高灵敏度的根本原因。
{"title":"SPR based dual parameter wide range curling pot shaped photonic crystal fiber sensor","authors":"Pengxiao Guo, H. Du, Jianshe Li, Yuxin Li, Shuguang Li, Zhiyong Yin, Ruiduo Wang, K. Li, Hongwei Li, Xingwei Li","doi":"10.1088/1402-4896/ad6694","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6694","url":null,"abstract":"\u0000 This article proposes a curling pot shaped photonic crystal fiber (PCF) sensor based on surface plasmon resonance (SPR), which utilizes two parallel polished surfaces in the cladding to achieve dual parameter measurements of liquid refractive index (RI) and temperature. The mode characteristics and sensing performance of the designed PCF sensor are studied using the finite element method, and the effects of changes in structural parameters such as pore radius, spacing, and gold film thickness on the resonance spectrum are analyzed. The sensing accuracy of the sensor is insensitive to the change of structural parameters, and it has the characteristics of a wide detection range, high sensitivity, and easy manufacture. When the liquid RI is in a wide range of 1.33-1.42, the RI sensitivity up to 20400 nm/RIU is obtained. When the temperature is within a wide range of -10 °C -100 °C, a temperature sensitivity of up to 15.4 nm/°C is achieved. The tight structure design of the sensor core close to the polishing surface and the anti-spill light design with a uniform arrangement of air holes enhance the SPR effect, which is the essential reason for achieving a wide detection range and high sensitivity.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"52 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141813077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad6698
Zi-Yu Xiong, Yong-Jun Xiao, Q. He, Ye-Qi Zhang
We investigate the influence of a time-dependent electromagnetic field(TDEF) on the double sudden change of the 1-norm geometric quantum discord(GQD) and sudden change of quantum coherence for superconducting circuit systems under spontaneous emission, where two supercon ducting qubits are each coupled to their own LC circuit or uniformly coupled to a common LC circuit, respectively. It is shown that the double sudden change of the GQD can be controlled, and the frozen time during which the GQD keeps nearly constant can be lengthened by applying the TDEF. Furthermore, we also find that the TDEF can delay the “critical point” of sudden change for quantum coherence and slow down the decay of quantum coherence. Finally, we explore how the TDEF affects the superconducting circuits system’s information flow by using trace distance and the optimal control scheme is sought by comparing the two coupled mode.
{"title":"Sudden change of the geometric quantum discord and quantum coherence in dissipative superconducting circuit systems with the time-dependent electromagnetic field","authors":"Zi-Yu Xiong, Yong-Jun Xiao, Q. He, Ye-Qi Zhang","doi":"10.1088/1402-4896/ad6698","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6698","url":null,"abstract":"\u0000 We investigate the influence of a time-dependent electromagnetic field(TDEF) on the double sudden change of the 1-norm geometric quantum discord(GQD) and sudden change of quantum coherence for superconducting circuit systems under spontaneous emission, where two supercon ducting qubits are each coupled to their own LC circuit or uniformly coupled to a common LC circuit, respectively. It is shown that the double sudden change of the GQD can be controlled, and the frozen time during which the GQD keeps nearly constant can be lengthened by applying the TDEF. Furthermore, we also find that the TDEF can delay the “critical point” of sudden change for quantum coherence and slow down the decay of quantum coherence. Finally, we explore how the TDEF affects the superconducting circuits system’s information flow by using trace distance and the optimal control scheme is sought by comparing the two coupled mode.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"90 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141812927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad6696
Huihai Wang, Zuyi Xin, Shaobo He, Kehui Sun
In this paper, a discrete fracmemristor (DFM) model is derived based on the Caputo difference, and a new fractional-order chaotic map is designed. Dynamics of proposed map is investigated in detail by means of Lyapunov exponent spectra, bifurcation diagrams, PE complexity and multistability analyses. Compared with the coupled discrete integer-order memristor (DIM), the map coupled with the DFM products richer dynamics, including larger attractor distribution, less numerically periodic windows, and higher complexity. Besides, the order becomes additional bifurcation parameter. Finally, the proposed map is implemented on Field-Programmable Gate Array (FPGA) platform, and applied in a pseudorandom number generator (PRNG), which further demonstrate its application value.
{"title":"Design of a discrete memristive chaotic map: fractional-order memory, dynamics and application","authors":"Huihai Wang, Zuyi Xin, Shaobo He, Kehui Sun","doi":"10.1088/1402-4896/ad6696","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6696","url":null,"abstract":"\u0000 In this paper, a discrete fracmemristor (DFM) model is derived based on the Caputo difference, and a new fractional-order chaotic map is designed. Dynamics of proposed map is investigated in detail by means of Lyapunov exponent spectra, bifurcation diagrams, PE complexity and multistability analyses. Compared with the coupled discrete integer-order memristor (DIM), the map coupled with the DFM products richer dynamics, including larger attractor distribution, less numerically periodic windows, and higher complexity. Besides, the order becomes additional bifurcation parameter. Finally, the proposed map is implemented on Field-Programmable Gate Array (FPGA) platform, and applied in a pseudorandom number generator (PRNG), which further demonstrate its application value.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"35 43","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141814278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad669a
S. I. Abdel-Hai, M. M. El-Tonsy, M. El-Henawey
The current study aims to devise a mechanism that can regulate the permeability of semi-permeable membranes, either by enhancing or reducing it, based on their intended application. This approach seeks to offer a straightforward and efficient method for controlling membrane permeability. Cellulose acetate (CA) and cellulose triacetate (CTA) membranes were subjected to two different heat treatment processes. One method involved thermal annealing at relatively high temperatures, while the other method involved freezing the membranes when they were saturated with water. A special osmosis cell was designed and utilized to quantify the flow rates across the treated CA and CTA membranes. Our findings indicate that subjecting the membranes to high-temperature annealing decreased the flow rate. Conversely, the freezing treatment boosted the flow rate, thereby enhancing membrane permeability. This approach could pave the way for numerous applications across various fields.
目前的研究旨在设计一种机制，根据半透膜的预期用途，通过提高或降低半透膜的渗透性来调节其渗透性。这种方法旨在提供一种直接有效的膜渗透性控制方法。醋酸纤维素（CA）和三醋酸纤维素（CTA）膜经历了两种不同的热处理过程。一种方法是在相对较高的温度下进行热退火，而另一种方法是在水饱和时对膜进行冷冻。我们设计并使用了一个特殊的渗透池来量化经过处理的 CA 和 CTA 膜上的流速。我们的研究结果表明，对膜进行高温退火会降低流速。相反，冷冻处理提高了流速，从而增强了膜的渗透性。这种方法可以为各个领域的众多应用铺平道路。
{"title":"Investigations for the heat treatment effects on permeability of some semi-permeable membranes","authors":"S. I. Abdel-Hai, M. M. El-Tonsy, M. El-Henawey","doi":"10.1088/1402-4896/ad669a","DOIUrl":"https://doi.org/10.1088/1402-4896/ad669a","url":null,"abstract":"\u0000 The current study aims to devise a mechanism that can regulate the permeability of semi-permeable membranes, either by enhancing or reducing it, based on their intended application. This approach seeks to offer a straightforward and efficient method for controlling membrane permeability. Cellulose acetate (CA) and cellulose triacetate (CTA) membranes were subjected to two different heat treatment processes. One method involved thermal annealing at relatively high temperatures, while the other method involved freezing the membranes when they were saturated with water. A special osmosis cell was designed and utilized to quantify the flow rates across the treated CA and CTA membranes. Our findings indicate that subjecting the membranes to high-temperature annealing decreased the flow rate. Conversely, the freezing treatment boosted the flow rate, thereby enhancing membrane permeability. This approach could pave the way for numerous applications across various fields.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"137 51","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141811105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-23DOI: 10.1088/1402-4896/ad6695
Sivalingam S M, V. Govindaraj
This paper proposes a scientific machine learning approach based on Deep Physics Informed Neural Network (PINN) to solve ψ-Caputo-type differential equations. The trial solution is constructed based on the Theory of Functional Connection (TFC), and the loss function is built using the L1-based difference and quadrature rule. The learning is handled using the new hybrid average subtraction, standard deviation-based optimizer, and the nonlinear least squares approach. The training error is theoretically obtained, and the generalization error is derived in terms of training error. Numerical experiments are performed to validate the proposed approach. We also validate our scheme on the SIR model.
本文提出了一种基于深度物理信息神经网络（PINN）的科学机器学习方法，用于求解ψ-卡普托型微分方程。试解是基于函数连接理论（TFC）构建的，损失函数是基于 L1 的差分和正交规则构建的。学习采用新的混合平均减法、基于标准偏差的优化器和非线性最小二乘法。从理论上得出了训练误差，并根据训练误差推导出了泛化误差。我们通过数值实验验证了所提出的方法。我们还在 SIR 模型上验证了我们的方案。
{"title":"Physics informed neural network based scheme and its error analysis for ψ-Caputo type fractional differential equations","authors":"Sivalingam S M, V. Govindaraj","doi":"10.1088/1402-4896/ad6695","DOIUrl":"https://doi.org/10.1088/1402-4896/ad6695","url":null,"abstract":"\u0000 This paper proposes a scientific machine learning approach based on Deep Physics Informed Neural Network (PINN) to solve ψ-Caputo-type differential equations. The trial solution is constructed based on the Theory of Functional Connection (TFC), and the loss function is built using the L1-based difference and quadrature rule. The learning is handled using the new hybrid average subtraction, standard deviation-based optimizer, and the nonlinear least squares approach. The training error is theoretically obtained, and the generalization error is derived in terms of training error. Numerical experiments are performed to validate the proposed approach. We also validate our scheme on the SIR model.","PeriodicalId":503429,"journal":{"name":"Physica Scripta","volume":"43 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141810601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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