Pub Date : 2024-06-14DOI: 10.1149/2162-8777/ad5868
Y. Hsiao, Te-Hua Fang, Liang-Wen Ji, Shi-Hong Yang
In this study, fabrication of dual phased La2O2CO3 films using an electrostatic spray technique was investigated and the developed films were used as CO2 gas sensors. Results demonstrated that La2O2CO3 films contained relatively high amounts of hexagonal phase formation when high concentrations of polyvinyl pyrrolidone (PVP) are used. Furthurmore, low concentrations of PVP yielded discontinuous films. The gas sensing results demonstrated that sensing efficiency can be improved by optimizing the concentration of PVP content. The results indicated that the highest response of 18% in the presence of 2000 ppm CO2 was attained by the film having a PVA concentration of 6 wt%. Structural and elemental analysis of La2O2CO3 films were verified using X-ray diffractometry, scanning electron microscopy, and energy-dispersive X-ray spectroscopy analyses. This study validates the sensing functionality of dual-phase La2O2CO3 films, which can function at gas concentrations that are as low as 800 ppm and are environmentally friendly.
{"title":"Leveraging the Surface Effect of Dual-Phase Lanthanum Dioxycarbonate to Sense Carbon Dioxide","authors":"Y. Hsiao, Te-Hua Fang, Liang-Wen Ji, Shi-Hong Yang","doi":"10.1149/2162-8777/ad5868","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5868","url":null,"abstract":"\u0000 In this study, fabrication of dual phased La2O2CO3 films using an electrostatic spray technique was investigated and the developed films were used as CO2 gas sensors. Results demonstrated that La2O2CO3 films contained relatively high amounts of hexagonal phase formation when high concentrations of polyvinyl pyrrolidone (PVP) are used. Furthurmore, low concentrations of PVP yielded discontinuous films. The gas sensing results demonstrated that sensing efficiency can be improved by optimizing the concentration of PVP content. The results indicated that the highest response of 18% in the presence of 2000 ppm CO2 was attained by the film having a PVA concentration of 6 wt%. Structural and elemental analysis of La2O2CO3 films were verified using X-ray diffractometry, scanning electron microscopy, and energy-dispersive X-ray spectroscopy analyses. This study validates the sensing functionality of dual-phase La2O2CO3 films, which can function at gas concentrations that are as low as 800 ppm and are environmentally friendly.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141338277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-14DOI: 10.1149/2162-8777/ad586a
Mohd Quasim Khan, Khursheed Ahmad, Rais Ahmad Khan, S. S. Almadhhi, Ali Alsulmi
Nitro-groups containing compounds are widely used in various applications but are considered highly toxic compounds. 4-nitrotoluene (4NT) belongs to the nitro-aromatic compounds and is a highly hazardous water contaminant. Thus, exploring new materials with excellent physiochemical and electrochemical properties is desirable for the construction of efficient 4NT sensors. The present study reports the fabrication of manganese dioxide/sulfur-doped reduced graphene oxide (α-MnO2/S@rGO) via hydrothermal synthesis procedure. The well-characterized α-MnO2/S@rGO was employed as a catalyst for the construction of α-MnO2/S@rGO modified screen printed carbon electrode (SPCE) for the detection of 4NT using cyclic voltammetry (CV). The α-MnO2/S@rGO modified electrode exhibits good electro-catalytic properties for the detection of 4NT compared to the bare SPCE, α-MnO2-, or S@rGO-modified electrodes. A reasonable detection limit of 0.5 µM with sensitivity of 1.97 µA.µM-1.cm-2 was obtained using α-MnO2/S@rGO modified electrode. The α-MnO2/S@rGO modified electrode demonstrated considerable selectivity for the sensing of 4NT in presence of various electro-active species. Note that the combination of catalytic α-MnO2 and conductive S@rGO present excellent synergistic interactions which improved the performance of the α-MnO2/S@rGO-modified electrode.
{"title":"Hydrothermal Preparation of Manganese Dioxide/Sulfur Doped Reduced Graphene Oxide and Construction of 4-Nitrotoluene Sensor","authors":"Mohd Quasim Khan, Khursheed Ahmad, Rais Ahmad Khan, S. S. Almadhhi, Ali Alsulmi","doi":"10.1149/2162-8777/ad586a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad586a","url":null,"abstract":"\u0000 Nitro-groups containing compounds are widely used in various applications but are considered highly toxic compounds. 4-nitrotoluene (4NT) belongs to the nitro-aromatic compounds and is a highly hazardous water contaminant. Thus, exploring new materials with excellent physiochemical and electrochemical properties is desirable for the construction of efficient 4NT sensors. The present study reports the fabrication of manganese dioxide/sulfur-doped reduced graphene oxide (α-MnO2/S@rGO) via hydrothermal synthesis procedure. The well-characterized α-MnO2/S@rGO was employed as a catalyst for the construction of α-MnO2/S@rGO modified screen printed carbon electrode (SPCE) for the detection of 4NT using cyclic voltammetry (CV). The α-MnO2/S@rGO modified electrode exhibits good electro-catalytic properties for the detection of 4NT compared to the bare SPCE, α-MnO2-, or S@rGO-modified electrodes. A reasonable detection limit of 0.5 µM with sensitivity of 1.97 µA.µM-1.cm-2 was obtained using α-MnO2/S@rGO modified electrode. The α-MnO2/S@rGO modified electrode demonstrated considerable selectivity for the sensing of 4NT in presence of various electro-active species. Note that the combination of catalytic α-MnO2 and conductive S@rGO present excellent synergistic interactions which improved the performance of the α-MnO2/S@rGO-modified electrode.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141338066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-14DOI: 10.1149/2162-8777/ad5869
H. Eraki, D. Kabouchi, Z. Fadil, N. Saber, R. El Fdil, A. Mhirech, E. Salmani, Abdulrahman A. Alsayyari, S. Saadaoui, C. Raorane
This study uses Monte Carlo simulations to investigate the dielectric properties of a mixed nano Kagome lattice. The investigation explores the effects of exchange coupling interactions, temperature variations, and the crystalline field on blocking temperature and hysteresis loop characteristics. By conducting in-depth analysis and simulation, the study aims to provide a nuanced understanding of the dielectric behavior within a mixed nano Kagome lattice. The dielectric response in a nano Kagome lattice has potential applications in spintronics and nanotechnology.
{"title":"Exploring Dielectric Responses in Nano Kagome Bilayers Through Monte Carlo Simulations","authors":"H. Eraki, D. Kabouchi, Z. Fadil, N. Saber, R. El Fdil, A. Mhirech, E. Salmani, Abdulrahman A. Alsayyari, S. Saadaoui, C. Raorane","doi":"10.1149/2162-8777/ad5869","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5869","url":null,"abstract":"\u0000 This study uses Monte Carlo simulations to investigate the dielectric properties of a mixed nano Kagome lattice. The investigation explores the effects of exchange coupling interactions, temperature variations, and the crystalline field on blocking temperature and hysteresis loop characteristics. By conducting in-depth analysis and simulation, the study aims to provide a nuanced understanding of the dielectric behavior within a mixed nano Kagome lattice. The dielectric response in a nano Kagome lattice has potential applications in spintronics and nanotechnology.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141343299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1149/2162-8777/ad57f4
Noor Saeed, Wafaa Hussain, Mukhlis M Ismail
Nanopowders of Mn-substituted CoFe2O4 were prepared in different proportions using the sol-gel auto-combustion method and were structurally and morphologically studied. In another step, composites based on polyvinyl alcohol (PVA) with Mn-substituted CoFe2O4 fillers were prepared, and the effect of the Mn-substituted CoFe2O4 on the optical, magnetic, and dielectric properties was studied. X-ray analysis revealed the formation of polycrystalline Mn-substituted CoFe2O4. The results showed a decrease in the lattice constant with Mn2+ substituted and incorporated into the crystal structure of CoFe2O4. The spinel structure of Mn-substituted CoFe2O4 was confirmed by the Fourier transform infrared spectrum where absorption bands appeared at 569-561 and 446-407 cm-1 which are attributed to tetrahedral and octahedral groups, respectively. The magnetic properties were affected when Mn ions were substituted with CoFe2O4, as shown by the results of VSM. It was observed that the saturation magnetization, remnant magnetization, and coercivity decreased with increasing Mn content. The dielectric constant and loss tangent of PVA/ MnxCo1-xFe2O4 were also studied. The difference in the diameters of the substituted and host ions causes the dielectric constant to increase following the substitution of Mn ions.
{"title":"Structural, Optical, and Morphological Study of Manganese Substituted Cobalt Ferrite and Its Effect on the Magnetic and Dielectric Properties of PVA Composites","authors":"Noor Saeed, Wafaa Hussain, Mukhlis M Ismail","doi":"10.1149/2162-8777/ad57f4","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57f4","url":null,"abstract":"\u0000 Nanopowders of Mn-substituted CoFe2O4 were prepared in different proportions using the sol-gel auto-combustion method and were structurally and morphologically studied. In another step, composites based on polyvinyl alcohol (PVA) with Mn-substituted CoFe2O4 fillers were prepared, and the effect of the Mn-substituted CoFe2O4 on the optical, magnetic, and dielectric properties was studied. X-ray analysis revealed the formation of polycrystalline Mn-substituted CoFe2O4. The results showed a decrease in the lattice constant with Mn2+ substituted and incorporated into the crystal structure of CoFe2O4. The spinel structure of Mn-substituted CoFe2O4 was confirmed by the Fourier transform infrared spectrum where absorption bands appeared at 569-561 and 446-407 cm-1 which are attributed to tetrahedral and octahedral groups, respectively. The magnetic properties were affected when Mn ions were substituted with CoFe2O4, as shown by the results of VSM. It was observed that the saturation magnetization, remnant magnetization, and coercivity decreased with increasing Mn content. The dielectric constant and loss tangent of PVA/ MnxCo1-xFe2O4 were also studied. The difference in the diameters of the substituted and host ions causes the dielectric constant to increase following the substitution of Mn ions.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141346933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1149/2162-8777/ad57f3
Z. Heiba, A. M. El naggar, A. Kamal, G. Lakshminarayana, Mohamed Bakr Mohamed
This study is devoted to optimizing the optical and dielectric parameters of polyvinyl alcohol (PVA)/ carboxymethyl cellulose (CMC)/ polyvinylpyrrolidone (PVP) blended polymer by adding ZnMn2O4/CuCo2O4 nanocomposite and controlling the amounts of multi-walled carbon nanotubes (MWCNTs) to engage them in flexible optoelectronics and storage energy capacitors. Herein, 0.9ZnMn2O4/0.1CuCo2O4 was synthesized by co-precipitation and hydrothermal methods and loaded with different ratios of MWCNTs into PVA/CMC/PVP blend to produce films by solution casting procedure. The crystallite size of 0.9ZnMn2O4/0.1CuCo2O4 was determined using transmission electron microscopy. The structures of the filler and doped blends were explored via the x-ray diffraction technique. The optical features of undoped and doped blends were explored by diffused reflectance and fluorescence spectrophotometers. The addition of ZnMn2O4/CuCo2O4 to PVA/CMC/PVP caused a decline of direct and indirect optical band gaps from 5.33 and 5.03 eV to 5.19 and 4.66 eV, respectively. By adding different amounts of MWCNTs, the direct/indirect optical band gap reduced irregularly, and they attained their minimum values (5.07, 4.46) eV as it doped with 0.6 wt % MWCNTs. The highest values of refractive index, extinction coefficient, optical conductivity and nonlinear optical parameters were achieved in the blend containing ZnMn2O4/CuCo2O4/0.6 wt % MWCNTs.
{"title":"Optical and Dielectric Features of PVA/CMC/PVP/ZnMn2O4/CuCo2O4/x wt % MWCNTs Blended Polymers for Optoelectronic Applications","authors":"Z. Heiba, A. M. El naggar, A. Kamal, G. Lakshminarayana, Mohamed Bakr Mohamed","doi":"10.1149/2162-8777/ad57f3","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57f3","url":null,"abstract":"\u0000 This study is devoted to optimizing the optical and dielectric parameters of polyvinyl alcohol (PVA)/ carboxymethyl cellulose (CMC)/ polyvinylpyrrolidone (PVP) blended polymer by adding ZnMn2O4/CuCo2O4 nanocomposite and controlling the amounts of multi-walled carbon nanotubes (MWCNTs) to engage them in flexible optoelectronics and storage energy capacitors. Herein, 0.9ZnMn2O4/0.1CuCo2O4 was synthesized by co-precipitation and hydrothermal methods and loaded with different ratios of MWCNTs into PVA/CMC/PVP blend to produce films by solution casting procedure. The crystallite size of 0.9ZnMn2O4/0.1CuCo2O4 was determined using transmission electron microscopy. The structures of the filler and doped blends were explored via the x-ray diffraction technique. The optical features of undoped and doped blends were explored by diffused reflectance and fluorescence spectrophotometers. The addition of ZnMn2O4/CuCo2O4 to PVA/CMC/PVP caused a decline of direct and indirect optical band gaps from 5.33 and 5.03 eV to 5.19 and 4.66 eV, respectively. By adding different amounts of MWCNTs, the direct/indirect optical band gap reduced irregularly, and they attained their minimum values (5.07, 4.46) eV as it doped with 0.6 wt % MWCNTs. The highest values of refractive index, extinction coefficient, optical conductivity and nonlinear optical parameters were achieved in the blend containing ZnMn2O4/CuCo2O4/0.6 wt % MWCNTs.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141345589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1149/2162-8777/ad57f1
Zijin Yan, Huilong Zhu, Weixing Huang, Hong Yang, wang Qi, Shunshun Lu, shuai yang, Junjie Li, Na Zhou, yue Zhang, Yunfei Shi, Liang Xiang, wenliang Liu, binghui Wang, Yongkui Zhang, Junfeng Li, Jun Luo, Tianchun Ye
A common source p-type single-crystal channel three-dimensional ferroelectric field-effect transistor (3D FeFET) in a 2×2×3 array is proposed. Two programming and erasing conditions are introduced. A large memory window (> 1.2 V), good retention (>10 years), and high speed (<100 ns) was presented under high voltage (±6 V) conditions. The endurance，>103, was observed under relatively low voltage (±3 V) conditions. Based on these two conditions, a novel asymmetric bias program and erase method is proposed to obtain good disturb inhibition. A more than 0.5 V threshold voltage shift in target cell was achieved while threshold voltage shift in unselected cell was limited, and analysis of long term disturb in novel method is proposed, showing good disturb inhibition. Additional investigation in word line disturbance shows causation and efficiency of disturb. Building upon the proposed structure of the 3D FeFET array, a vector matrix multiplication able to calculate 2-bit weights was designed and demonstrated. This work provides a potential solution for increasing integration density with 3D FeFET array.
提出了一种 2×2×3 阵列的共源 p 型单晶沟道三维铁电场效应晶体管（3D FeFET）。引入了两种编程和擦除条件。在相对较低的电压（±3 V）条件下，观察到了较大的存储窗口（> 1.2 V）、良好的保持能力（> 10 年）和较高的速度（103）。基于这两个条件，提出了一种新型非对称偏置编程和擦除方法，以获得良好的干扰抑制。目标单元的阈值电压偏移超过了 0.5 V，而非选择单元的阈值电压偏移受到了限制，并提出了新方法的长期干扰分析，显示出良好的干扰抑制效果。对字线干扰的进一步研究表明了干扰的成因和效率。在拟议的 3D FeFET 阵列结构基础上，设计并演示了能够计算 2 位权重的矢量矩阵乘法。这项工作为提高三维场效应晶体管阵列的集成密度提供了一个潜在的解决方案。
{"title":"A Common Source 3D FeFET with Disturb Inhibition Program and Erase Method","authors":"Zijin Yan, Huilong Zhu, Weixing Huang, Hong Yang, wang Qi, Shunshun Lu, shuai yang, Junjie Li, Na Zhou, yue Zhang, Yunfei Shi, Liang Xiang, wenliang Liu, binghui Wang, Yongkui Zhang, Junfeng Li, Jun Luo, Tianchun Ye","doi":"10.1149/2162-8777/ad57f1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57f1","url":null,"abstract":"\u0000 A common source p-type single-crystal channel three-dimensional ferroelectric field-effect transistor (3D FeFET) in a 2×2×3 array is proposed. Two programming and erasing conditions are introduced. A large memory window (> 1.2 V), good retention (>10 years), and high speed (<100 ns) was presented under high voltage (±6 V) conditions. The endurance，>103, was observed under relatively low voltage (±3 V) conditions. Based on these two conditions, a novel asymmetric bias program and erase method is proposed to obtain good disturb inhibition. A more than 0.5 V threshold voltage shift in target cell was achieved while threshold voltage shift in unselected cell was limited, and analysis of long term disturb in novel method is proposed, showing good disturb inhibition. Additional investigation in word line disturbance shows causation and efficiency of disturb. Building upon the proposed structure of the 3D FeFET array, a vector matrix multiplication able to calculate 2-bit weights was designed and demonstrated. This work provides a potential solution for increasing integration density with 3D FeFET array.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141348340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1149/2162-8777/ad57f0
Xianfeng Zhao, Xiaoxu Yan, Xinxin Shao, Kangpeng Li, Minghong Sun, Xinpeng Ji, Huidan Lu, Yongping Liu
Two-dimensional layered materials have been widely used in the field of photodetectors because of their unique photoelectric properties. Among them, the multi-heterojunction based on two-dimensional materials with high carrier separation efficiency is expected to be designed as a high-performance photodetector (PD). This work focuses on the fabrication of g-C3N4/SnSe2/H-TiO2 ternary heterojunctions for photodetectors, obtained by depositing SnSe2 and g-C3N4 nanosheets onto TiO2 nanotube arrays using chemical vapor deposition and impregnation methods, respectively. The formation of the g-C3N4/SnSe2/H-TiO2 ternary heterojunction enhances and broadens absorption in the ultraviolet-visible range. Photoelectrochemical measurements have confirmed that the fabricated g-C3N4/SnSe2/H-TiO2 ternary heterojunction photodetector exhibits remarkable light detection capabilities at 370, 450, and 520 nm, meaning broadband photodetection behavior. Notably, under light illumination of 370 nm wavelength, it demonstrates a high responsivity of 2.742 A/W, an impressive detectivity of 5.84×10¹⁰ Jones, an external quantum efficiency of 9.21×10² %, and excellent stability. This high performance can be attributed to the effective separation and transfer of photogenerated carriers within the ternary heterojunction, significantly enhancing the photoresponse. The construction of the novel broadband-responsive ternary g-C3N4/SnSe2/TiO2 heterojunction holds promise for driving the future development of wideband, high-performance, and highly integrated photodetectors.
{"title":"Construction of g-C3N4/SnSe2/H-TiO2 Ternary Heterojunction for High-Performance Photodetectors","authors":"Xianfeng Zhao, Xiaoxu Yan, Xinxin Shao, Kangpeng Li, Minghong Sun, Xinpeng Ji, Huidan Lu, Yongping Liu","doi":"10.1149/2162-8777/ad57f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57f0","url":null,"abstract":"\u0000 Two-dimensional layered materials have been widely used in the field of photodetectors because of their unique photoelectric properties. Among them, the multi-heterojunction based on two-dimensional materials with high carrier separation efficiency is expected to be designed as a high-performance photodetector (PD). This work focuses on the fabrication of g-C3N4/SnSe2/H-TiO2 ternary heterojunctions for photodetectors, obtained by depositing SnSe2 and g-C3N4 nanosheets onto TiO2 nanotube arrays using chemical vapor deposition and impregnation methods, respectively. The formation of the g-C3N4/SnSe2/H-TiO2 ternary heterojunction enhances and broadens absorption in the ultraviolet-visible range. Photoelectrochemical measurements have confirmed that the fabricated g-C3N4/SnSe2/H-TiO2 ternary heterojunction photodetector exhibits remarkable light detection capabilities at 370, 450, and 520 nm, meaning broadband photodetection behavior. Notably, under light illumination of 370 nm wavelength, it demonstrates a high responsivity of 2.742 A/W, an impressive detectivity of 5.84×10¹⁰ Jones, an external quantum efficiency of 9.21×10² %, and excellent stability. This high performance can be attributed to the effective separation and transfer of photogenerated carriers within the ternary heterojunction, significantly enhancing the photoresponse. The construction of the novel broadband-responsive ternary g-C3N4/SnSe2/TiO2 heterojunction holds promise for driving the future development of wideband, high-performance, and highly integrated photodetectors.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141348799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-12DOI: 10.1149/2162-8777/ad575f
Yulia Pilyugina, E. V. Kuzmina, V. Kolosnitsyn
This review gives a detailed overview of the challenges in using sulfide solid electrolytes in all-solid-state lithium-sulfur batteries and discusses strategies to overcome them. First, the general description of the synthetic procedure of the sulfide solid electrolytes is given, including descriptions of the potential ways for improvement of the electrolyte properties, such as ionic conductivity and air and moisture resistance. This is followed by a review of the polymer binders and matrices that can enhance the sulfide solid electrolytes mechanical strength. Subsequently, the ways to ensure the chemical stability on the anode-solid electrolyte interface are described. Finally, prototypes of the all-solid-state Li-S batteries, created by using the combination of all above-mentioned methods, are discussed.
{"title":"Review—Recent Advancements in Sulfide Solid Electrolytes for All-Solid-State Lithium-Sulfur Batteries","authors":"Yulia Pilyugina, E. V. Kuzmina, V. Kolosnitsyn","doi":"10.1149/2162-8777/ad575f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad575f","url":null,"abstract":"\u0000 This review gives a detailed overview of the challenges in using sulfide solid electrolytes in all-solid-state lithium-sulfur batteries and discusses strategies to overcome them. First, the general description of the synthetic procedure of the sulfide solid electrolytes is given, including descriptions of the potential ways for improvement of the electrolyte properties, such as ionic conductivity and air and moisture resistance. This is followed by a review of the polymer binders and matrices that can enhance the sulfide solid electrolytes mechanical strength. Subsequently, the ways to ensure the chemical stability on the anode-solid electrolyte interface are described. Finally, prototypes of the all-solid-state Li-S batteries, created by using the combination of all above-mentioned methods, are discussed.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.1149/2162-8777/ad561d
Swaroop Kumar Macherla, Ekta Goel
This article compares the performance of two Vertical Non-Uniform Channel Double Gate Tunnel Field Effect Transistors (VNUCDGTFETs), a normal all-Silicon Tunnel Field-Effect Transistor (TFET) having a pocket and another one a Gallium Antimonide/Silicon heterojunction TFET with pocket. GaSb is a III-V narrow energy band gap material, employed in the source area of the TFET structure to decrease the tunneling width and thus to make more number of carriers capable enough to tunnel through the heterojunction. The proposed source pocket heterojunction non uniform channel TFET presents superior performance as compared to the conventional non uniform channel vertical TFET with a pocket, regarding a larger ION/IOFF ratio, a reduced sub-threshold swing, and a smaller threshold voltage at VDS=0.5V. Furthermore, the proposed TFET device undergoes a comprehensive analysis of both DC parameters and various analog/RF parameters.
{"title":"GaSb/Si Heterojunction Based Pocket Engineered Vertical Non-Uniform Channel Double Gate TFETs for Low Power Applications","authors":"Swaroop Kumar Macherla, Ekta Goel","doi":"10.1149/2162-8777/ad561d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad561d","url":null,"abstract":"\u0000 This article compares the performance of two Vertical Non-Uniform Channel Double Gate Tunnel Field Effect Transistors (VNUCDGTFETs), a normal all-Silicon Tunnel Field-Effect Transistor (TFET) having a pocket and another one a Gallium Antimonide/Silicon heterojunction TFET with pocket. GaSb is a III-V narrow energy band gap material, employed in the source area of the TFET structure to decrease the tunneling width and thus to make more number of carriers capable enough to tunnel through the heterojunction. The proposed source pocket heterojunction non uniform channel TFET presents superior performance as compared to the conventional non uniform channel vertical TFET with a pocket, regarding a larger ION/IOFF ratio, a reduced sub-threshold swing, and a smaller threshold voltage at VDS=0.5V. Furthermore, the proposed TFET device undergoes a comprehensive analysis of both DC parameters and various analog/RF parameters.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141361993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The double waveguide structure of a 1060 nm laser diode with different Al composition linear gradient was designed for achieving high output power. In contrast to the single waveguide layer with Al-free composition gradient structure, the double waveguide layer with a reverse Al composition gradient from n side to p side showed excellent optoelectronic properties. We found that the reverse Al composition gradient double waveguide layer could decrease injection potential barrier for electrons and holes, as well as has a high block leakage potential barrier, which can be help to increase carrier transport and optical confined factor. Meanwhile, it can improve sheet carrier concentration in order to decrease non-radiative recombination. When the injection current is 6 A, the maximal output power and peak wall-plug conversion efficiency are 6.12 W and 81.1%, respectively. The influencing mechanism of these photoelectric parameters on power and wall-plug conversion efficiency was discussed. The novel waveguide structure will be favorable for designing epitaxial structure and providing a theoretical basis for high-power laser diode.
为实现高输出功率，设计了具有不同铝成分线性梯度的 1060 nm 激光二极管双波导结构。与无铝成分梯度结构的单波导层相比，从 n 侧到 p 侧具有反向铝成分梯度的双波导层显示出优异的光电特性。我们发现，反向铝成分梯度双波导层可以降低电子和空穴的注入势垒，并具有较高的阻挡泄漏势垒，这有助于提高载流子传输和光学约束因子。同时，它还能提高片载流子浓度，以减少非辐射重组。当注入电流为 6 A 时，最大输出功率和峰值壁插转换效率分别为 6.12 W 和 81.1%。讨论了这些光电参数对功率和壁插转换效率的影响机制。该新型波导结构将有利于设计外延结构，并为高功率激光二极管提供理论依据。
{"title":"Investigation of GaAs-Based Laser Diode Adopting an Al Composition Gradient Double Waveguide Structure and its Photoelectric Properties","authors":"Pengpeng Zhao, Hailiang Dong, Zhigang Jia, Wei Jia, Zeming Chen, Jian Liang, Bingshe Xu","doi":"10.1149/2162-8777/ad561c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad561c","url":null,"abstract":"\u0000 The double waveguide structure of a 1060 nm laser diode with different Al composition linear gradient was designed for achieving high output power. In contrast to the single waveguide layer with Al-free composition gradient structure, the double waveguide layer with a reverse Al composition gradient from n side to p side showed excellent optoelectronic properties. We found that the reverse Al composition gradient double waveguide layer could decrease injection potential barrier for electrons and holes, as well as has a high block leakage potential barrier, which can be help to increase carrier transport and optical confined factor. Meanwhile, it can improve sheet carrier concentration in order to decrease non-radiative recombination. When the injection current is 6 A, the maximal output power and peak wall-plug conversion efficiency are 6.12 W and 81.1%, respectively. The influencing mechanism of these photoelectric parameters on power and wall-plug conversion efficiency was discussed. The novel waveguide structure will be favorable for designing epitaxial structure and providing a theoretical basis for high-power laser diode.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141365169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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