Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8a
Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi
In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.
{"title":"Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions","authors":"Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi","doi":"10.1149/2162-8777/ad1c8a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8a","url":null,"abstract":"\u0000 In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in the surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements and theoretical calculations. The research results demonstrate that both AEO-9 and O-20 exhibit strong molecular activity and can adsorb on the silicon surface in a parallel manner, forming a protective film that effectively shields against corrosive particle erosion. Additionally, AEO-9 and O-20 can enhance the wetting of corrosive solutions on the silicon surface, resulting in more uniform chemical etch and reduced formation of etching pits. Furthermore, AEO-9 and O-20 can reduce the residual silicon sol on the silicon surface, thereby decreasing surface roughness. These findings shed new light on how AEO-9 and O-20 affect surface roughness on silicon, and suggest their potential use in the final polishing of silicon wafers.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139443864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8e
Gyanendra Kumar Mishra, Prafulla Kumar Pradhan, N. K. Mohanty
Iron-based ceramic GdFeAsO has been prepared using the solid-state reaction method. This material exhibits unique properties, showing superconductivity at extremely low temperatures and behaving as a semiconductor at high temperatures. Raman spectroscopy revealed various Raman active modes in the sample. UV-visible spectroscopy was employed to study the optical properties of the material in the wavelength range of 200-800 nm. Using Tauc's plot, the optical band energy values of the sample were estimated to be approximately 2.78 eV. The electrical characterizations have been performed through an impedance analyzer. Additionally, the sample displayed negative temperature coefficient of resistance behavior and positive temperature coefficient resistance. The thermistor parameters are evaluated using the bulk resistance at various temperatures. This opens up potential uses for thermistors in devices like fuses and temperature sensors. The ac conductivity spectrum of the sample followed both Jonscher's universal power law and the Arrhenius equation. The activation energy was calculated for different temperature regions. The correlated barrier hopping model is used to analyze the electrical conduction mechanism in the sample. This study provides insights into the unique electrical and optical properties of the GdFeAsO ceramic and sheds light on its potential applications in various fields.
{"title":"Electrical Transport Properties and Hopping Mechanism of ZrCuSiAs Type Compound GdFeAsO","authors":"Gyanendra Kumar Mishra, Prafulla Kumar Pradhan, N. K. Mohanty","doi":"10.1149/2162-8777/ad1c8e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8e","url":null,"abstract":"\u0000 Iron-based ceramic GdFeAsO has been prepared using the solid-state reaction method. This material exhibits unique properties, showing superconductivity at extremely low temperatures and behaving as a semiconductor at high temperatures. Raman spectroscopy revealed various Raman active modes in the sample. UV-visible spectroscopy was employed to study the optical properties of the material in the wavelength range of 200-800 nm. Using Tauc's plot, the optical band energy values of the sample were estimated to be approximately 2.78 eV. The electrical characterizations have been performed through an impedance analyzer. Additionally, the sample displayed negative temperature coefficient of resistance behavior and positive temperature coefficient resistance. The thermistor parameters are evaluated using the bulk resistance at various temperatures. This opens up potential uses for thermistors in devices like fuses and temperature sensors. The ac conductivity spectrum of the sample followed both Jonscher's universal power law and the Arrhenius equation. The activation energy was calculated for different temperature regions. The correlated barrier hopping model is used to analyze the electrical conduction mechanism in the sample. This study provides insights into the unique electrical and optical properties of the GdFeAsO ceramic and sheds light on its potential applications in various fields.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139443108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8c
P. Usha, S. Ramesh, J. P, Mariappan R
This study presents the synthesis and characterization of thin-film CdSnO3 nanoparticles at different deposition temperatures of 400, 500, and 600°C. The prepared samples were characterized by X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and optical and ammonia gas sensing properties, respectively. XRD confirms the orthorhombic crystal structure, with prominent peaks corresponding to the (111), (112), (103), (130), and (133) planes. The mean crystallite size is determined to be 84 nm. SEM reveals morphological changes with varying substrate temperatures. EDX spectroscopy shows elemental composition variations, highlighting non-stoichiometric CdSnO3. TEM images depict larger spherical nanoparticles with clear lattice fringes. FTIR spectra confirm the presence of Cd-O and Sn-O bonds. Optical properties yield a calculated band gap was decreased with increase in temperature. Gas sensing tests demonstrate significant sensitivity to ammonia gas concentrations, with responses affected by ammonia concentrations. Overall, CdSnO3 nanoparticles show promise for applications in diverse fields due to their tunable properties and potential for tailored performance.
{"title":"Unveiling the Versatile Realm of CdSnO3 Nanoparticles for Advanced Sensing Applications","authors":"P. Usha, S. Ramesh, J. P, Mariappan R","doi":"10.1149/2162-8777/ad1c8c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8c","url":null,"abstract":"\u0000 This study presents the synthesis and characterization of thin-film CdSnO3 nanoparticles at different deposition temperatures of 400, 500, and 600°C. The prepared samples were characterized by X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and optical and ammonia gas sensing properties, respectively. XRD confirms the orthorhombic crystal structure, with prominent peaks corresponding to the (111), (112), (103), (130), and (133) planes. The mean crystallite size is determined to be 84 nm. SEM reveals morphological changes with varying substrate temperatures. EDX spectroscopy shows elemental composition variations, highlighting non-stoichiometric CdSnO3. TEM images depict larger spherical nanoparticles with clear lattice fringes. FTIR spectra confirm the presence of Cd-O and Sn-O bonds. Optical properties yield a calculated band gap was decreased with increase in temperature. Gas sensing tests demonstrate significant sensitivity to ammonia gas concentrations, with responses affected by ammonia concentrations. Overall, CdSnO3 nanoparticles show promise for applications in diverse fields due to their tunable properties and potential for tailored performance.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139444464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c89
Wenhao Xian, Baoguo Zhang, Min Liu, P. Wu, Ye Wang, Shitong Liu, Dexing Cui
With the ongoing progress of mobile communications and new energy technologies, the market interest in high-frequency and high-power semiconductor devices has risen. Gallium nitride (GaN), a wide bandgap semiconductor material, has become a popular area of research in relevant fields. A sufficiently flat material surface can significantly enhance the device's performance. Therefore, this paper explores the effect of oxidants on the quality of GaN surface during chemical mechanical polishing (CMP). Atomic force microscopy (AFM) was employed to examine the surface morphology of GaN after each CMP experiment. The aim was to evaluate the effect of specific slurry components on GaN surface quality. The results revealed that the introduction of oxidizers, particularly the potent oxidizer potassium persulfate (K2S2O8), was advantageous in reducing the surface roughness Sq and thus, enhancing the surface quality of GaN. The surface roughness (Sq) of GaN was reduced from 7.7 to 0.78 nm after the CMP process with the optimal components. AFM tests were conducted on different areas of the GaN surface within a range of 1 μm2, which revealed that clear images of the GaN atomic steps can be obtained, and the Sq can reach as low as 0.26 nm.
随着移动通信和新能源技术的不断进步，市场对高频和大功率半导体器件的兴趣日益高涨。氮化镓（GaN）作为一种宽带隙半导体材料，已成为相关领域的热门研究领域。足够平整的材料表面能显著提高器件的性能。因此，本文探讨了氧化剂在化学机械抛光（CMP）过程中对氮化镓表面质量的影响。采用原子力显微镜 (AFM) 在每次 CMP 实验后检查 GaN 的表面形态。目的是评估特定浆料成分对 GaN 表面质量的影响。结果显示，氧化剂，尤其是强氧化剂过硫酸钾（K2S2O8）的引入有利于降低表面粗糙度 Sq，从而提高 GaN 的表面质量。使用最佳成分进行 CMP 处理后，氮化镓的表面粗糙度（Sq）从 7.7 纳米降至 0.78 纳米。对 GaN 表面 1 μm2 范围内的不同区域进行了原子力显微镜测试，结果表明可以获得清晰的 GaN 原子阶图像，Sq 可低至 0.26 nm。
{"title":"Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques","authors":"Wenhao Xian, Baoguo Zhang, Min Liu, P. Wu, Ye Wang, Shitong Liu, Dexing Cui","doi":"10.1149/2162-8777/ad1c89","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c89","url":null,"abstract":"\u0000 With the ongoing progress of mobile communications and new energy technologies, the market interest in high-frequency and high-power semiconductor devices has risen. Gallium nitride (GaN), a wide bandgap semiconductor material, has become a popular area of research in relevant fields. A sufficiently flat material surface can significantly enhance the device's performance. Therefore, this paper explores the effect of oxidants on the quality of GaN surface during chemical mechanical polishing (CMP). Atomic force microscopy (AFM) was employed to examine the surface morphology of GaN after each CMP experiment. The aim was to evaluate the effect of specific slurry components on GaN surface quality. The results revealed that the introduction of oxidizers, particularly the potent oxidizer potassium persulfate (K2S2O8), was advantageous in reducing the surface roughness Sq and thus, enhancing the surface quality of GaN. The surface roughness (Sq) of GaN was reduced from 7.7 to 0.78 nm after the CMP process with the optimal components. AFM tests were conducted on different areas of the GaN surface within a range of 1 μm2, which revealed that clear images of the GaN atomic steps can be obtained, and the Sq can reach as low as 0.26 nm.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139442169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8d
Vishal Chaudhary, S. Rustagi, Ajeet Kumar Kaushik, Manisha Bhutani
Antimicrobial resistance (AMR) in humans is driven by pragmatic contagion diagnostics and incessant inadvertent antibiotics abuse (AB). The state-of-the-art AB monitoring involves developing nanomaterials-enabled optical biosensors with prompt and precise detection efficacy. This prospect highlights the diversified optical biosensors, including SPR, SERS, and fluorescent and colorimetric biosensors, for efficiently detecting AB. It also elaborates the fundamentals, challenges, potential alternatives, and prospects associated with these optical biosensing strategies for detecting AB as an effective AMR prevention/monitoring strategy. This will serve as a roadmap for future research and development dedicated to nano-enabled-optical biosensors for AMR monitoring through AB detection at community/individual sources.
人类的抗菌药耐药性（AMR）是由实用的传染病诊断和不断滥用抗生素（AB）造成的。最先进的抗生素滥用监测包括开发具有快速、精确检测功效的纳米材料光学生物传感器。本展望重点介绍了用于有效检测 AB 的各种光学生物传感器，包括 SPR、SERS 以及荧光和比色生物传感器。它还阐述了与这些光学生物传感策略相关的基本原理、挑战、潜在替代方案和前景，以检测 AB 作为一种有效的 AMR 预防/监测策略。这将为今后通过在社区/个人源头检测 AB 来监测 AMR 的纳米光学生物传感器的研发工作提供路线图。
{"title":"Prospect of Nano-Enabled Optical Biosensors for Antibiotic Abuse Surveillance as an Early Prevention Tool for Antimicrobial Resistance","authors":"Vishal Chaudhary, S. Rustagi, Ajeet Kumar Kaushik, Manisha Bhutani","doi":"10.1149/2162-8777/ad1c8d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8d","url":null,"abstract":"\u0000 Antimicrobial resistance (AMR) in humans is driven by pragmatic contagion diagnostics and incessant inadvertent antibiotics abuse (AB). The state-of-the-art AB monitoring involves developing nanomaterials-enabled optical biosensors with prompt and precise detection efficacy. This prospect highlights the diversified optical biosensors, including SPR, SERS, and fluorescent and colorimetric biosensors, for efficiently detecting AB. It also elaborates the fundamentals, challenges, potential alternatives, and prospects associated with these optical biosensing strategies for detecting AB as an effective AMR prevention/monitoring strategy. This will serve as a roadmap for future research and development dedicated to nano-enabled-optical biosensors for AMR monitoring through AB detection at community/individual sources.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139442570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-09DOI: 10.1149/2162-8777/ad1c8f
Gadiraju Venkata Vijaya Bhaskara Rao, Sobhanachalam p, Vijaya Dasaradha Sani, B. Avula, Giridhar Babu N, K. R. Kandula, Goutham Cilaveni, Ashok A, Anees Ansari, Sambasiva Rao T, Gangadhar S, Chittibabu A
We give an in-depth examination of the structural and electrical features of NBTMn-BAl-NaNb ceramics. The comprehensive structural investigation indicated an important connection among the phase and polarization mechanisms of the compounds/samples by Nb substitution. The quantitative study of phase contribution shown by Raman spectroscopy is confirmed by structural refinement inquiries. The significant polarization difference in NBTMn–BAl–NaNb was found to be in excellent agreement with the structural presence of a dual phase contribution, which was confirmed through structural refinement. The substitution of NaNb in NBTMn–BAl led to a significant shift in average grain size (~1 μm). It was additionally found that the dielectric constant of NBTMn–BAl–NaNb was greater than typical, lowering the depolarization temperature. This modification resulted in reduced dielectric loss as well as shifts in coordination and structural features. The room-temperature bipolar and unipolar strain S(%) ~1.5, and the fact that the substitution of NaNb leads to an increase in both (bipolar and unipolar), represents structural symmetry modulation. As a result of this, these were discovered to be feasible prospects for current generation applications.
{"title":"Comprehensive Structural Analysis Identifies the Relationships Between the Electrical Characteristics of Environmentally Friendly NBTMn-BAl-NaNb Ceramics","authors":"Gadiraju Venkata Vijaya Bhaskara Rao, Sobhanachalam p, Vijaya Dasaradha Sani, B. Avula, Giridhar Babu N, K. R. Kandula, Goutham Cilaveni, Ashok A, Anees Ansari, Sambasiva Rao T, Gangadhar S, Chittibabu A","doi":"10.1149/2162-8777/ad1c8f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1c8f","url":null,"abstract":"\u0000 We give an in-depth examination of the structural and electrical features of NBTMn-BAl-NaNb ceramics. The comprehensive structural investigation indicated an important connection among the phase and polarization mechanisms of the compounds/samples by Nb substitution. The quantitative study of phase contribution shown by Raman spectroscopy is confirmed by structural refinement inquiries. The significant polarization difference in NBTMn–BAl–NaNb was found to be in excellent agreement with the structural presence of a dual phase contribution, which was confirmed through structural refinement. The substitution of NaNb in NBTMn–BAl led to a significant shift in average grain size (~1 μm). It was additionally found that the dielectric constant of NBTMn–BAl–NaNb was greater than typical, lowering the depolarization temperature. This modification resulted in reduced dielectric loss as well as shifts in coordination and structural features. The room-temperature bipolar and unipolar strain S(%) ~1.5, and the fact that the substitution of NaNb leads to an increase in both (bipolar and unipolar), represents structural symmetry modulation. As a result of this, these were discovered to be feasible prospects for current generation applications.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139444721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-08DOI: 10.1149/2162-8777/ad1bda
Vladimir I Nikolaev, A. Polyakov, V. Krymov, Sevastian Shapenkov, Pavel Butenko, E. Yakimov, Anton Vasilev, I. Shchemerov, A. Chernykh, N. Matros, Luiza Alexanyan, Anastasiia I Kochkova, S. Pearton
Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β- Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method in the (010) direction. The net density of shallow donors in (100) plates cleaved from the crystal was 2.6×1017 cm-3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1×1014 cm-3) 0.8 eV (concentration 3.9×1016 cm-3) and 1.1 eV (concentration 8.9×1015 cm-3) were detected by deep level transient spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4×1015 cm-3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped edge-defined film-fed growth technique.
{"title":"Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3","authors":"Vladimir I Nikolaev, A. Polyakov, V. Krymov, Sevastian Shapenkov, Pavel Butenko, E. Yakimov, Anton Vasilev, I. Shchemerov, A. Chernykh, N. Matros, Luiza Alexanyan, Anastasiia I Kochkova, S. Pearton","doi":"10.1149/2162-8777/ad1bda","DOIUrl":"https://doi.org/10.1149/2162-8777/ad1bda","url":null,"abstract":"\u0000 Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β- Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method in the (010) direction. The net density of shallow donors in (100) plates cleaved from the crystal was 2.6×1017 cm-3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1×1014 cm-3) 0.8 eV (concentration 3.9×1016 cm-3) and 1.1 eV (concentration 8.9×1015 cm-3) were detected by deep level transient spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4×1015 cm-3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped edge-defined film-fed growth technique.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139445010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-02DOI: 10.1149/2162-8777/ad19e7
Usha Rani Malothu, K. Donthula, M. Kakunuri, G. N. Nageswara Rao
In the present study, a novel carbon-carbon composite electrode was prepared by embedding activated carbon derived from chickpea pods and evaluating its potential as an electrode for supercapacitors. A simple, single-step electrospinning technique was used for the synthesis of activated carbon-carbon nanofiber composite. The synthesized activated carbon-carbon nanofiber composite electrode is flexible and binder-free with high specific surface area, micro and meso pores, interconnected fiber-to-flake morphology and possess high graphitization. Additionally, rapid electrolyte diffusion has resulted in a low charge transfer resistance due to interconnected morphology. In 6 M KOH electrolyte, composite binder-free electrode shows a specific capacitance of 147 F g-1 at 0.5 A g-1 compared to activated carbon electrodes that showed a specific capacitance of 120 F g-1 at 0.5 A g-1. It exhibits an energy density of 13 Wh k g-1 at 0.366 W k g-1 power density. It also showed impressive cyclic stability by retaining 93.5 % of initial capacitance till 1200 cycles at 1 A g-1. Overall, the study presents an easy-to-use, low-cost, eco-friendly, and flexible electrode for supercapacitors that is free of binder.
本研究通过嵌入从鹰嘴豆荚中提取的活性碳制备了一种新型碳-碳复合电极，并评估了其作为超级电容器电极的潜力。活性碳-碳纳米纤维复合材料的合成采用了简单的单步电纺丝技术。合成的活性碳-碳纳米纤维复合电极柔韧且不含粘合剂，具有高比表面积、微孔和中孔、纤维与薄片相互连接的形态以及高石墨化。此外，由于相互连接的形态，电解质的快速扩散导致了较低的电荷转移电阻。在 6 M KOH 电解液中，无粘结剂复合电极在 0.5 A g-1 的条件下显示出 147 F g-1 的比电容，而活性炭电极在 0.5 A g-1 的条件下显示出 120 F g-1 的比电容。在 0.366 W k g-1 功率密度下，它的能量密度为 13 Wh k g-1。它还表现出令人印象深刻的循环稳定性，在 1 A g-1 条件下循环 1200 次，仍能保持 93.5% 的初始电容。总之，这项研究为超级电容器提供了一种不含粘合剂的易用、低成本、环保和灵活的电极。
{"title":"Binder-Free Flexible Chickpea Pod Derived Activated Carbon-Carbon Nanofiber Composite for Supercapacitor Application","authors":"Usha Rani Malothu, K. Donthula, M. Kakunuri, G. N. Nageswara Rao","doi":"10.1149/2162-8777/ad19e7","DOIUrl":"https://doi.org/10.1149/2162-8777/ad19e7","url":null,"abstract":"\u0000 In the present study, a novel carbon-carbon composite electrode was prepared by embedding activated carbon derived from chickpea pods and evaluating its potential as an electrode for supercapacitors. A simple, single-step electrospinning technique was used for the synthesis of activated carbon-carbon nanofiber composite. The synthesized activated carbon-carbon nanofiber composite electrode is flexible and binder-free with high specific surface area, micro and meso pores, interconnected fiber-to-flake morphology and possess high graphitization. Additionally, rapid electrolyte diffusion has resulted in a low charge transfer resistance due to interconnected morphology. In 6 M KOH electrolyte, composite binder-free electrode shows a specific capacitance of 147 F g-1 at 0.5 A g-1 compared to activated carbon electrodes that showed a specific capacitance of 120 F g-1 at 0.5 A g-1. It exhibits an energy density of 13 Wh k g-1 at 0.366 W k g-1 power density. It also showed impressive cyclic stability by retaining 93.5 % of initial capacitance till 1200 cycles at 1 A g-1. Overall, the study presents an easy-to-use, low-cost, eco-friendly, and flexible electrode for supercapacitors that is free of binder.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139453053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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