Pub Date : 2024-06-10DOI: 10.1149/2162-8777/ad561b
William Beers, Mikhail Brik, Chong-Geng Ma, Willian E. Cohen, Alok Srivastava
We have measured the dependence of the Mn4+ lifetime and intensity on temperature of commercial Na2SiF6: Mn4+ phosphor. The data are fitted to existing physical models to extract the activation energy for thermal quenching. The parameters of our fitting are compared with those reported for laboratory synthesized Na2SiF6:Mn4+ and commercial K2SiF6:Mn4+ phosphors that is sold under the trade name, TriGain®. This comparative analysis sheds light on the mechanism of thermal quenching of the Mn4+ ion luminescence in M2SiF6 (M=K, Na) compounds. We show that the activation energy and the onset temperature of thermal quenching for the 2E 4T2 4A2 crossover process is correlated with the energy of the 4T2 level and argue that this is a robust electronic structure-property relationship in fluoride hosts with low defect density. The study provides, therefore, an understanding of the factors responsible for non-radiative relaxation processes, which is fundamental to the understanding of phosphor quantum efficiency and performance.
{"title":"The Dependence on Temperature of the Mn4+ Emission Intensity and Lifetime in Na2SiF6","authors":"William Beers, Mikhail Brik, Chong-Geng Ma, Willian E. Cohen, Alok Srivastava","doi":"10.1149/2162-8777/ad561b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad561b","url":null,"abstract":"\u0000 We have measured the dependence of the Mn4+ lifetime and intensity on temperature of commercial Na2SiF6: Mn4+ phosphor. The data are fitted to existing physical models to extract the activation energy for thermal quenching. The parameters of our fitting are compared with those reported for laboratory synthesized Na2SiF6:Mn4+ and commercial K2SiF6:Mn4+ phosphors that is sold under the trade name, TriGain®. This comparative analysis sheds light on the mechanism of thermal quenching of the Mn4+ ion luminescence in M2SiF6 (M=K, Na) compounds. We show that the activation energy and the onset temperature of thermal quenching for the 2E 4T2 4A2 crossover process is correlated with the energy of the 4T2 level and argue that this is a robust electronic structure-property relationship in fluoride hosts with low defect density. The study provides, therefore, an understanding of the factors responsible for non-radiative relaxation processes, which is fundamental to the understanding of phosphor quantum efficiency and performance.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141361474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-03DOI: 10.1149/2162-8777/ad522d
S. Idrissi, A. Jabar, L. Bahmad
We explored the magnetic and magnetocaloric properties of the C56 Fullerene-like system formed by the mixed spins 2 and 3/2. We applied Monte Carlo simulations using the Metropolis algorithm and show the effects of different physical parameters. We also established the ground state phase diagrams, at zero reduced temperature, in different planes formed by the reduced external magnetic field, the reduced coupling interaction between the mixed spins, and the reduced crystal field. We found that the total magnetizations predict a specific reduced critical temperature value, confirmed by the peaks observed in the magnetic susceptibilities. To elucidate the behavior of the magnetic entropy changes -ΔSm, of the C56 system, for several external magnetic field values we show that the reduced critical temperature value tC increases when increasing the reduced external magnetic field. In addition, we show the dependency of the maximum “magnetic entropy change” as a function of the reduced external magnetic field. We found an almost linear increase for this parameter when increasing the reduced external magnetic field values. The obtained hysteresis cycles of the studied system showed a decreasing effect of the reduced crystal field followed by a decrease of the magnetic hysteresis surface cycles, as well as the corresponding reduced coercive magnetic field values.
{"title":"Magnetic and Magnetocaloric Properties of C56 like-Fullerene Structure: A Monte Carlo Study","authors":"S. Idrissi, A. Jabar, L. Bahmad","doi":"10.1149/2162-8777/ad522d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522d","url":null,"abstract":"We explored the magnetic and magnetocaloric properties of the C56 Fullerene-like system formed by the mixed spins 2 and 3/2. We applied Monte Carlo simulations using the Metropolis algorithm and show the effects of different physical parameters. We also established the ground state phase diagrams, at zero reduced temperature, in different planes formed by the reduced external magnetic field, the reduced coupling interaction between the mixed spins, and the reduced crystal field. We found that the total magnetizations predict a specific reduced critical temperature value, confirmed by the peaks observed in the magnetic susceptibilities. To elucidate the behavior of the magnetic entropy changes -ΔSm, of the C56 system, for several external magnetic field values we show that the reduced critical temperature value tC increases when increasing the reduced external magnetic field. In addition, we show the dependency of the maximum “magnetic entropy change” as a function of the reduced external magnetic field. We found an almost linear increase for this parameter when increasing the reduced external magnetic field values. The obtained hysteresis cycles of the studied system showed a decreasing effect of the reduced crystal field followed by a decrease of the magnetic hysteresis surface cycles, as well as the corresponding reduced coercive magnetic field values.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141388996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-16DOI: 10.1149/2162-8777/ad4c96
Essam B. Moustafa, Mohamed Said, Abdulrahman Aljabri, Mohammed A. Taha, Rasha Youness, Hossameldin Hussein
Functional graded nanocomposites (FGNCs) based on Al are artificially tailored heterogeneous materials intended to serve the demand for diverse and contradicting properties used in various industrial applications. FGNCs and hybrid FGNCs (HFGNCs) based on Al reinforced with graphene and vanadium carbide (VC) were prepared using powder metallurgy techniques and investigated. Both samples were designed with a gradient composition, where the bottom layer consisted of 100% pure Al, followed by three consecutive layers containing progressively increasing amounts of reinforcement. The incorporation of graphene and VC into layer powders resulted in a decrease in both particle and crystal dimensions compared to pure Al. Adding graphene has a negative effect on bulk density samples, while VC has a positive effect. Reinforcing materials led to a decrease in thermal conductivity that reached 26.7 % for samples reinforced with VC reinforcement, except for FGNCs reinforced with graphene, which increased by ~3.3 compared to Al. The samples’ CTE and electrical conductivity values decreased, although adding graphene alone led to a slight decrease in electrical conductivity. A significant improvement in all mechanical properties was noted with additional. The HFGCNs reinforced with the largest amount of hybrid reinforcement recorded an improvement in CTE value, Young's modulus, and compressive strength by about 38.1%, 22.2%, and 20.5%, respectively, compared to Al
{"title":"Fabrication and Characterization of Functionally Graded Nanocomposites: Impact of Graphene and Vanadium Carbide on Aluminum Matrix","authors":"Essam B. Moustafa, Mohamed Said, Abdulrahman Aljabri, Mohammed A. Taha, Rasha Youness, Hossameldin Hussein","doi":"10.1149/2162-8777/ad4c96","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c96","url":null,"abstract":"\u0000 Functional graded nanocomposites (FGNCs) based on Al are artificially tailored heterogeneous materials intended to serve the demand for diverse and contradicting properties used in various industrial applications. FGNCs and hybrid FGNCs (HFGNCs) based on Al reinforced with graphene and vanadium carbide (VC) were prepared using powder metallurgy techniques and investigated. Both samples were designed with a gradient composition, where the bottom layer consisted of 100% pure Al, followed by three consecutive layers containing progressively increasing amounts of reinforcement. The incorporation of graphene and VC into layer powders resulted in a decrease in both particle and crystal dimensions compared to pure Al. Adding graphene has a negative effect on bulk density samples, while VC has a positive effect. Reinforcing materials led to a decrease in thermal conductivity that reached 26.7 % for samples reinforced with VC reinforcement, except for FGNCs reinforced with graphene, which increased by ~3.3 compared to Al. The samples’ CTE and electrical conductivity values decreased, although adding graphene alone led to a slight decrease in electrical conductivity. A significant improvement in all mechanical properties was noted with additional. The HFGCNs reinforced with the largest amount of hybrid reinforcement recorded an improvement in CTE value, Young's modulus, and compressive strength by about 38.1%, 22.2%, and 20.5%, respectively, compared to Al","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140969843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-16DOI: 10.1149/2162-8777/ad4c95
G. AlZaidy, Hamdah T.A. Alanazi
Perovskite solar cells (PSC) have drawn interest in recent years due to their progressively improving power conversion efficiency (PCE), lightweight and wearable properties, straightforward solution fabrication process, suitability for flight, potential for deployment in ultra-lightweight space applications, and low-cost material constituents, among other factors. The efficiency of perovskite solar cells has exceeded 25% by developing novel low-cost synthesis methods and advancements in interface and electrode materials, enhancing the production of high-quality perovskite films. Moreover, perovskite solar cells' stability has been the focus of several studies. This review primarily examines recent advances in perovskite solar cells concerning their properties, composition, and synthesis methods. The main focus is to study transition metal oxide (TMO)-based nanocomposites for various PSC layers, including electron transport layers (ETLs), hole transport layers (HTLs), and other layers. These TMO-based nanocomposites were employed in perovskite solar cells, considering their band gap, carrier mobility, transmittance, and other relevant factors. The prospects of different TMO (iron, titanium, copper, nickel, etc.) -based perovskite solar cells and their potential for commercialization feasibility have also been examined.
{"title":"Review—Recent Advancements in Perovskites Solar Cell Materials and the Investigation of Transition Metal Oxide-Based Nanocomposites for Usage in Perovskites Solar Cells","authors":"G. AlZaidy, Hamdah T.A. Alanazi","doi":"10.1149/2162-8777/ad4c95","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c95","url":null,"abstract":"\u0000 Perovskite solar cells (PSC) have drawn interest in recent years due to their progressively improving power conversion efficiency (PCE), lightweight and wearable properties, straightforward solution fabrication process, suitability for flight, potential for deployment in ultra-lightweight space applications, and low-cost material constituents, among other factors. The efficiency of perovskite solar cells has exceeded 25% by developing novel low-cost synthesis methods and advancements in interface and electrode materials, enhancing the production of high-quality perovskite films. Moreover, perovskite solar cells' stability has been the focus of several studies. This review primarily examines recent advances in perovskite solar cells concerning their properties, composition, and synthesis methods. The main focus is to study transition metal oxide (TMO)-based nanocomposites for various PSC layers, including electron transport layers (ETLs), hole transport layers (HTLs), and other layers. These TMO-based nanocomposites were employed in perovskite solar cells, considering their band gap, carrier mobility, transmittance, and other relevant factors. The prospects of different TMO (iron, titanium, copper, nickel, etc.) -based perovskite solar cells and their potential for commercialization feasibility have also been examined.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140968128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad4b9c
K. M. C. Babu, Ekta Goel
This manuscript presents a pioneering study on enhancing analog and radio frequency performance through the implementation of negative capacitance source pocket double gate tunnel field-effect transistor. By integrating a ferroelectric material into the gate stack and introducing a fully depleted n-type pocket near the source/channel junction, we achieved significant enhancements in key metrics such as ON current (ION), switching ratio, subthreshold swing (SS), and various analog/RF parameters like transconductance (gm), cutoff frequency (fT) when compared to existing literature. Additionally, we extend our analysis to circuit-level applications such as inverter and 5-stage ring oscillator. Our findings reveal an impressive inverter delay of 1.09 ps with a gain of 104, as well as a ring oscillator operating at a frequency of 500 GHz. These results position the proposed device as an ideal candidate for high-speed, low-power applications.
{"title":"Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications","authors":"K. M. C. Babu, Ekta Goel","doi":"10.1149/2162-8777/ad4b9c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4b9c","url":null,"abstract":"\u0000 This manuscript presents a pioneering study on enhancing analog and radio frequency performance through the implementation of negative capacitance source pocket double gate tunnel field-effect transistor. By integrating a ferroelectric material into the gate stack and introducing a fully depleted n-type pocket near the source/channel junction, we achieved significant enhancements in key metrics such as ON current (ION), switching ratio, subthreshold swing (SS), and various analog/RF parameters like transconductance (gm), cutoff frequency (fT) when compared to existing literature. Additionally, we extend our analysis to circuit-level applications such as inverter and 5-stage ring oscillator. Our findings reveal an impressive inverter delay of 1.09 ps with a gain of 104, as well as a ring oscillator operating at a frequency of 500 GHz. These results position the proposed device as an ideal candidate for high-speed, low-power applications.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140980969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study reports a self-induced ferroelectric Ge-doped HfO2 (Ge:HfO2) thin film through interface reactions. In the first experiment, three treatments for forming interfacial layer (IL) were discussed through TiN/2-nm-thick Al2O3/2-nm-thick Ge:HfO2/GeO2/Ge metal-ferroelectric-insulator-semiconductor capacitors. The remnant polarization (Pr), leakage current, and interface trap density (Dit) were compared to select the most appropriate IL treatment. The results show that the in-situ ozone treatment under the standard atomic layer deposition process had the second highest 2Pr value as well as lower Dit values. Next, the thicknesses of Al2O3/Ge:HfO2 would be changed to 4/2 nm and 3/3 nm to investigate the ferroelectricity and leakage current. Although the 3-nm-thick Al2O3/3-nm-thick Ge:HfO2 shows a lower 2Pr value, the leakage current is much lower than 2-nm-thick Al2O3/2-nm-thick Ge:HfO2. The self-induced ferroelectric 3-nm-thick Ge:HfO2 thin film was then applied to fabricate Ge stacked nanowires gate-all-around field-effect transistor. The results show a steep subthreshold slope of 58 mV/dec for pFET and on-off current ratio > 105 and have high potential in low-power IC applications.
{"title":"Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-all-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer","authors":"Yi-Wen Lin, Yu-Hsien Huang, Shan-Wen Lin, Guang-Li Luo, YuHsien Lin, Yung-Chun Wu, Fu-Ju Hou","doi":"10.1149/2162-8777/ad4b9d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4b9d","url":null,"abstract":"\u0000 This study reports a self-induced ferroelectric Ge-doped HfO2 (Ge:HfO2) thin film through interface reactions. In the first experiment, three treatments for forming interfacial layer (IL) were discussed through TiN/2-nm-thick Al2O3/2-nm-thick Ge:HfO2/GeO2/Ge metal-ferroelectric-insulator-semiconductor capacitors. The remnant polarization (Pr), leakage current, and interface trap density (Dit) were compared to select the most appropriate IL treatment. The results show that the in-situ ozone treatment under the standard atomic layer deposition process had the second highest 2Pr value as well as lower Dit values. Next, the thicknesses of Al2O3/Ge:HfO2 would be changed to 4/2 nm and 3/3 nm to investigate the ferroelectricity and leakage current. Although the 3-nm-thick Al2O3/3-nm-thick Ge:HfO2 shows a lower 2Pr value, the leakage current is much lower than 2-nm-thick Al2O3/2-nm-thick Ge:HfO2. The self-induced ferroelectric 3-nm-thick Ge:HfO2 thin film was then applied to fabricate Ge stacked nanowires gate-all-around field-effect transistor. The results show a steep subthreshold slope of 58 mV/dec for pFET and on-off current ratio > 105 and have high potential in low-power IC applications.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.1149/2162-8777/ad4ac4
Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Tai-Cheng Chou, D. Neal, J. Esquivel-Upshaw
Breast cancer remains a considerable health challenge, affecting numerous individuals annually. This research introduces an innovative method for detecting breast cancer utilizing dual-channel test strips capable of simultaneously assessing two key biomarkers—HER2 and CA 15-3. The test strip utilized in this study is not only cost-effective but also entirely non-invasive. The reusable device employs a printed circuit board with metal-oxide-semiconductor field-effect transistor amplification and Arduino-based control to convert voltage signals from test strips into digital readings efficiently. The device utilizes double-pulse measurement instead of direct current, effectively mitigating the screening effect. The detection limit for both biomarkers is exceptionally low at 10-15 g/mL, surpassing commercial enzyme-linked immunoassay kits by four orders of magnitude. The sensor demonstrates remarkable sensitivity, with 78/dec for HER2 and 56/dec for CA 15-3. Human sample tests were conducted to validate the efficacy of the dual-channel strip, successfully distinguishing between healthy and cancerous groups. The results reveal significant p-values for both HER2 and CA 15-3 tests, underscoring the significance of this research. Note that this is a rapid testing process, completed in less than 2 seconds. These findings offer a promising avenue for swift and accurate breast cancer detection, furnishing crucial insights for early diagnosis and subsequent treatment.
乳腺癌仍然是一项巨大的健康挑战，每年影响着无数人。这项研究介绍了一种利用双通道试纸检测乳腺癌的创新方法，这种试纸能够同时评估两种关键的生物标志物--HER2 和 CA 15-3。这项研究中使用的试纸不仅具有成本效益，而且完全无创。这种可重复使用的设备采用了带金属氧化物半导体场效应晶体管放大功能的印刷电路板和基于 Arduino 的控制，能有效地将试纸上的电压信号转换成数字读数。该设备采用双脉冲测量而非直流电，有效地减轻了筛选效应。这两种生物标记物的检测限极低，仅为 10-15 克/毫升，比商用酶联免疫测定试剂盒高出四个数量级。该传感器灵敏度极高，HER2 为 78/dec，CA 15-3 为 56/dec。为了验证双通道条带的功效，我们进行了人体样本测试，成功区分了健康组和癌症组。结果显示，HER2 和 CA 15-3 测试的 p 值都很明显，突出了这项研究的意义。请注意，这是一个快速检测过程，不到 2 秒钟即可完成。这些研究结果为快速、准确地检测乳腺癌提供了一个很好的途径，为早期诊断和后续治疗提供了重要依据。
{"title":"Point-of-Care Detection of HER2 and CA 15-3 in Breast Cancer Patients: Dual-Channel Biosensor Implementation","authors":"Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Tai-Cheng Chou, D. Neal, J. Esquivel-Upshaw","doi":"10.1149/2162-8777/ad4ac4","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4ac4","url":null,"abstract":"\u0000 Breast cancer remains a considerable health challenge, affecting numerous individuals annually. This research introduces an innovative method for detecting breast cancer utilizing dual-channel test strips capable of simultaneously assessing two key biomarkers—HER2 and CA 15-3. The test strip utilized in this study is not only cost-effective but also entirely non-invasive. The reusable device employs a printed circuit board with metal-oxide-semiconductor field-effect transistor amplification and Arduino-based control to convert voltage signals from test strips into digital readings efficiently. The device utilizes double-pulse measurement instead of direct current, effectively mitigating the screening effect. The detection limit for both biomarkers is exceptionally low at 10-15 g/mL, surpassing commercial enzyme-linked immunoassay kits by four orders of magnitude. The sensor demonstrates remarkable sensitivity, with 78/dec for HER2 and 56/dec for CA 15-3. Human sample tests were conducted to validate the efficacy of the dual-channel strip, successfully distinguishing between healthy and cancerous groups. The results reveal significant p-values for both HER2 and CA 15-3 tests, underscoring the significance of this research. Note that this is a rapid testing process, completed in less than 2 seconds. These findings offer a promising avenue for swift and accurate breast cancer detection, furnishing crucial insights for early diagnosis and subsequent treatment.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140984704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.1149/2162-8777/ad49d6
Chih-wei Chen, Hao-Hsuan Lo, Y. Hsin
This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1-µs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100–400 V and ON-state drain currents of ID,ON 1–16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device's characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.
{"title":"Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT","authors":"Chih-wei Chen, Hao-Hsuan Lo, Y. Hsin","doi":"10.1149/2162-8777/ad49d6","DOIUrl":"https://doi.org/10.1149/2162-8777/ad49d6","url":null,"abstract":"\u0000 This study investigated threshold voltage (VTH) instability in a Schottky p-GaN gate AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) with a 1-µs pulse width in the ON-state and OFF-state. OFF-state drain biases (VDS,OFF) of 100–400 V and ON-state drain currents of ID,ON 1–16 A were applied in the DPT to observe the post-DPT VTH shift. The ON-state currents did not strongly influence the device's characteristics after the DPT. However, the OFF-state voltages, particularly VDS,OFF = 100 and 200 V, exerted notable effects. A TCAD simulation was conducted to investigate the mechanism underlying the VTH shift after the DPT at various VDS,OFF and ID,ON levels.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140992587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-09DOI: 10.1149/2162-8777/ad497b
Ami Hitomi, Arisa Mori, Ririka Watanabe, Toru Katsumata, Hiroaki Aizawa
The influence of variations in composition (x = MgO/Al2O3 = 0.3–1.0), Fe2O3 concentrations (0.05 mol%–2.0 mol%), and O2 concentrations (100 vol% and 0 vol%) in the atmosphere on the PL characteristics of Fe-doped MgAl2O4 crystals were investigated using single phase spinel crystals grown by FZ technique. The peak wavelength shift of photoluminescence at around 730 nm are observed depending on the Fe2O3 concentration and composition. Concentration quenching of red PL occurred at Fe2O3 concentration above 0.1 mol%. PL intensity was higher in samples grown in 100 vol% O2 compared to those grown in 100 vol% Ar. PL intensity from Fe-doped MgAl2O4 increased with increasing compositions x from 0.3 to 1.0. MgAl2O4 doped with 0.1 mol% Fe2O3, and a stoichiometric composition (x = 1.0) grown in 100 vol% O2, demonstrated strong red PL with ultraviolet-C (UVC) lights excitation.
{"title":"Red Photoluminescence from Fe-Doped MgAl2O4 Crystals","authors":"Ami Hitomi, Arisa Mori, Ririka Watanabe, Toru Katsumata, Hiroaki Aizawa","doi":"10.1149/2162-8777/ad497b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad497b","url":null,"abstract":"\u0000 The influence of variations in composition (x = MgO/Al2O3 = 0.3–1.0), Fe2O3 concentrations (0.05 mol%–2.0 mol%), and O2 concentrations (100 vol% and 0 vol%) in the atmosphere on the PL characteristics of Fe-doped MgAl2O4 crystals were investigated using single phase spinel crystals grown by FZ technique. The peak wavelength shift of photoluminescence at around 730 nm are observed depending on the Fe2O3 concentration and composition. Concentration quenching of red PL occurred at Fe2O3 concentration above 0.1 mol%. PL intensity was higher in samples grown in 100 vol% O2 compared to those grown in 100 vol% Ar. PL intensity from Fe-doped MgAl2O4 increased with increasing compositions x from 0.3 to 1.0. MgAl2O4 doped with 0.1 mol% Fe2O3, and a stoichiometric composition (x = 1.0) grown in 100 vol% O2, demonstrated strong red PL with ultraviolet-C (UVC) lights excitation.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140995449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-09DOI: 10.1149/2162-8777/ad497a
Chenliang Huo
Silicon has garnered significant attention as the primary material for solar cell preparation. Traditional alkaline etching solutions are limited to creating an upright pyramid structure on monocrystalline silicon surfaces. However, research indicates that an inverted pyramid structure exhibits superior light-trapping properties compared to the upright pyramid structure. In this study, we employed a one-step copper ion metal-assisted chemical etching process to fabricate an inverted pyramid structure on monocrystalline silicon wafers. This method allows for the customization of either inverted or upright pyramid structures by adjusting the concentration of specific solution components. Characterization of the textured silicon wafers reveals that the inverted pyramid structure exhibits lower reflectivity than both the upright pyramid structure and polished silicon. By integrating this texturing technique into the solar cell production line, we successfully produced solar cells with both inverted and upright pyramid structures. Evaluation of various solar cell parameters demonstrates that the inverted pyramid structure outperforms the upright pyramid structure, showcasing lower reflectivity and higher photoelectric conversion efficiency.
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