This study proposes a multifunctional absorber in the terahertz (THz) regime based on vanadium dioxide (VO2) and graphene with either–or band selector applications, which can be realized by electrically and thermally controlling the Fermi energy level of graphene and vanadium dioxide, respectively. The broadband absorption can be achieved with absorptance exceeding 90%, when the VO2 film is in the metallic phase and the Fermi energy levels of the upper and lower graphene layers are simultaneously set to 0.6 and 0 eV, respectively. The double narrowband can be realized when the VO2 film is in the insulating phase and the Fermi energy levels in upper and lower graphene layers are set as 0 and 0.8 eV, respectively. By flexibly shifting between the broadband and the double narrowband, the proposed absorber can be used as an either–or band selector, corresponding optional bandwidth from 2.05 to 2.35 THz, and 3.25 to 3.6 THz. Furthermore, single narrowband absorption can be achieved by setting the conductivity of the VO2 film to appropriate values. The proposed absorber can be used in the THz regime in applications such as multifunctional devices, switches, cloaking objects, and band selectors.
{"title":"Graphene and Vanadium Dioxide-Based Terahertz Absorber with Switchable Multifunctionality for Band Selection Applications","authors":"Yan Liu, Lingxi Hu, Ming Liu","doi":"10.3390/nano14141200","DOIUrl":"https://doi.org/10.3390/nano14141200","url":null,"abstract":"This study proposes a multifunctional absorber in the terahertz (THz) regime based on vanadium dioxide (VO2) and graphene with either–or band selector applications, which can be realized by electrically and thermally controlling the Fermi energy level of graphene and vanadium dioxide, respectively. The broadband absorption can be achieved with absorptance exceeding 90%, when the VO2 film is in the metallic phase and the Fermi energy levels of the upper and lower graphene layers are simultaneously set to 0.6 and 0 eV, respectively. The double narrowband can be realized when the VO2 film is in the insulating phase and the Fermi energy levels in upper and lower graphene layers are set as 0 and 0.8 eV, respectively. By flexibly shifting between the broadband and the double narrowband, the proposed absorber can be used as an either–or band selector, corresponding optional bandwidth from 2.05 to 2.35 THz, and 3.25 to 3.6 THz. Furthermore, single narrowband absorption can be achieved by setting the conductivity of the VO2 film to appropriate values. The proposed absorber can be used in the THz regime in applications such as multifunctional devices, switches, cloaking objects, and band selectors.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"28 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141647997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability.
{"title":"Thermal Effects on Domain Wall Stability at Magnetic Stepped Nanowire for Nanodevices Storage","authors":"M. Al Bahri, S. Al-Kamiyani","doi":"10.3390/nano14141202","DOIUrl":"https://doi.org/10.3390/nano14141202","url":null,"abstract":"In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"15 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141646415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changbo Deng, Qiuping Huang, Zhengping Fu, Yalin Lu
The ligand engineering of inorganic lead halide perovskite quantum dots (PQDs) is an indispensable strategy to boost their photoluminescence stability, which is pivotal for optoelectronics applications. CsPbX3 (X = Cl, Br, I) PQDs exhibit exceptional optical properties, including high color purity and tunable bandgaps. Despite their promising characteristics, environmental sensitivity poses a challenge to their stability. This article reviews the solution-based synthesis methods with ligand engineering. It introduces the impact of factors like humidity, temperature, and light exposure on PQD’s instability, as well as in situ and post-synthesis ligand engineering strategies. The use of various ligands, including X- and L-type ligands, is reviewed for their effectiveness in enhancing stability and luminescence performance. Finally, the significant potential of ligand engineering for the broader application of PQDs in optoelectronic devices is also discussed.
无机卤化铅包晶量子点（PQDs）的配体工程是提高其光致发光稳定性不可或缺的策略，而光致发光稳定性对于光电应用至关重要。CsPbX3（X = Cl、Br、I）PQDs 具有优异的光学特性，包括高色纯度和可调带隙。尽管它们具有良好的特性，但环境敏感性对其稳定性提出了挑战。本文回顾了基于溶液的配体工程合成方法。文章介绍了湿度、温度和光照等因素对 PQD 不稳定性的影响，以及原位和合成后配体工程策略。此外，还评述了各种配体（包括 X 型和 L 型配体）在提高稳定性和发光性能方面的有效性。最后，还讨论了配体工程对于 PQDs 在光电器件中更广泛应用的巨大潜力。
{"title":"Ligand Engineering of Inorganic Lead Halide Perovskite Quantum Dots toward High and Stable Photoluminescence","authors":"Changbo Deng, Qiuping Huang, Zhengping Fu, Yalin Lu","doi":"10.3390/nano14141201","DOIUrl":"https://doi.org/10.3390/nano14141201","url":null,"abstract":"The ligand engineering of inorganic lead halide perovskite quantum dots (PQDs) is an indispensable strategy to boost their photoluminescence stability, which is pivotal for optoelectronics applications. CsPbX3 (X = Cl, Br, I) PQDs exhibit exceptional optical properties, including high color purity and tunable bandgaps. Despite their promising characteristics, environmental sensitivity poses a challenge to their stability. This article reviews the solution-based synthesis methods with ligand engineering. It introduces the impact of factors like humidity, temperature, and light exposure on PQD’s instability, as well as in situ and post-synthesis ligand engineering strategies. The use of various ligands, including X- and L-type ligands, is reviewed for their effectiveness in enhancing stability and luminescence performance. Finally, the significant potential of ligand engineering for the broader application of PQDs in optoelectronic devices is also discussed.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"6 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141648464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A phase-field model for the precipitation of Fe-Cr-Al alloy is established incorporating grain boundary (GB) effects and irradiation-accelerated diffusion. The radiation source and grain boundary effect are incorporated to broaden the applicability of the Fe-Cr-Al precipitated phase-field model. The model is firstly employed to simulate the precipitation of the Cr-rich α’ phase in a single-crystal alloy. The precipitation rate and the size distribution of the precipitated phase were analyzed. Subsequently, the model is utilized to simulate segregation at GBs in a double-crystal system, analyzing the enrichment of Cr and depletion of Al near these boundaries. The simulation results are consistent with experimental observations reported in the references. Finally, the model is applied to simulate the precipitation in a polycrystalline Fe-Cr-Al system. The simulated results revealed that the presence of GBs induces the formation of localized regions with enhanced Cr and Al content as well as depleted zones adjacent to these boundaries. GBs also diminish both the quantity and precipitation rate of the formed phase within the grains.
{"title":"Phase-Field Simulation of Precipitation and Grain Boundary Segregation in Fe-Cr-Al Alloys under Irradiation","authors":"Xuxi Liu, Wenlong Shen, Wenbo Liu","doi":"10.3390/nano14141198","DOIUrl":"https://doi.org/10.3390/nano14141198","url":null,"abstract":"A phase-field model for the precipitation of Fe-Cr-Al alloy is established incorporating grain boundary (GB) effects and irradiation-accelerated diffusion. The radiation source and grain boundary effect are incorporated to broaden the applicability of the Fe-Cr-Al precipitated phase-field model. The model is firstly employed to simulate the precipitation of the Cr-rich α’ phase in a single-crystal alloy. The precipitation rate and the size distribution of the precipitated phase were analyzed. Subsequently, the model is utilized to simulate segregation at GBs in a double-crystal system, analyzing the enrichment of Cr and depletion of Al near these boundaries. The simulation results are consistent with experimental observations reported in the references. Finally, the model is applied to simulate the precipitation in a polycrystalline Fe-Cr-Al system. The simulated results revealed that the presence of GBs induces the formation of localized regions with enhanced Cr and Al content as well as depleted zones adjacent to these boundaries. GBs also diminish both the quantity and precipitation rate of the formed phase within the grains.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"8 13","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141649608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Electrospinning is an effective method to prepare nanofibers at present. Aiming at problems such as low spinnable viscosity and the low productivity of the traditional multi-needle, a radial nozzle was proposed in this paper. In order to solve the problem of end effects in multi-nozzle electrospinning, COMSOL Multiphysics 6.0 software was used to simulate the electric field in electrospinning with seven radial nozzles. And the influence on the electric field intensity and distribution of the structural parameters of the radial nozzle, including the number, length, tip-shape, and tip-pointing direction of the vanes, were studied. Then, the electric field intensity of any point on the central axis of a radial nozzle was obtained based on the principle of electric field superposition, and then the rotation angle of the vanes corresponding to the minimum Coulomb repulsion force on the target point was deduced. At last, the method of electric field homogenization of a rotating vane arrangement was obtained. In the simulation, the strength and homogenization of the electric field were taken as the research objective, and the optimum structure parameters of the radial nozzle were obtained; the uniform theory of the electric field based on the orientation of the vanes was verified. Then, electrospinning with seven radial nozzles was performed, and it was found that each radial nozzle can produce multiple jets during electrospinning, and the prepared electrospun membranes have even thickness and high porosity. What is more, the fibers are relatively finer and more uniform.
{"title":"Research on Electric Field Homogenization in Radial Multi-Nozzle Electrospinning","authors":"Jian Liu, Shoujun Dong, Chenghao Wang, Yanbo Liu, Shanshan Pan, Zhaosong Yin","doi":"10.3390/nano14141199","DOIUrl":"https://doi.org/10.3390/nano14141199","url":null,"abstract":"Electrospinning is an effective method to prepare nanofibers at present. Aiming at problems such as low spinnable viscosity and the low productivity of the traditional multi-needle, a radial nozzle was proposed in this paper. In order to solve the problem of end effects in multi-nozzle electrospinning, COMSOL Multiphysics 6.0 software was used to simulate the electric field in electrospinning with seven radial nozzles. And the influence on the electric field intensity and distribution of the structural parameters of the radial nozzle, including the number, length, tip-shape, and tip-pointing direction of the vanes, were studied. Then, the electric field intensity of any point on the central axis of a radial nozzle was obtained based on the principle of electric field superposition, and then the rotation angle of the vanes corresponding to the minimum Coulomb repulsion force on the target point was deduced. At last, the method of electric field homogenization of a rotating vane arrangement was obtained. In the simulation, the strength and homogenization of the electric field were taken as the research objective, and the optimum structure parameters of the radial nozzle were obtained; the uniform theory of the electric field based on the orientation of the vanes was verified. Then, electrospinning with seven radial nozzles was performed, and it was found that each radial nozzle can produce multiple jets during electrospinning, and the prepared electrospun membranes have even thickness and high porosity. What is more, the fibers are relatively finer and more uniform.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"10 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141649385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Exciton–polaritons, which are bosonic quasiparticles with an extremely low mass, play a key role in understanding macroscopic quantum effects related to Bose–Einstein condensation (BEC) in solid-state systems. The study of trapped polaritons in a potential well provides an ideal platform for manipulating polariton condensates, enabling polariton lasing with specific formation in k-space. Here, we realize quantized microcavity polariton lasing in simple harmonic oscillator (SHO) states based on spatial localized excitons in InGaN/GaN quantum wells (QWs). Benefiting from the high exciton binding energy (90 meV) and large oscillator strength of the localized exciton, room-temperature (RT) polaritons with large Rabi splitting (61 meV) are obtained in a strongly coupled microcavity. The manipulation of polariton condensates is performed through a parabolic potential well created by optical pump control. Under the confinement situation, trapped polaritons are controlled to be distributed in the selected quantized energy sublevels of the SHO state. The maximum energy spacing of 11.3 meV is observed in the SHO sublevels, indicating the robust polariton trapping of the parabolic potential well. Coherent quantized polariton lasing is achieved in the ground state of the SHO state and the coherence property of the lasing is analyzed through the measurements of spatial interference patterns and g(2)(τ). Our results offer a feasible route to explore the manipulation of macroscopic quantum coherent states and to fabricate novel polariton devices towards room-temperature operations.
{"title":"Quantized Microcavity Polariton Lasing Based on InGaN Localized Excitons","authors":"Huying Zheng, Runchen Wang, Xuebing Gong, Junxing Dong, Lisheng Wang, Jingzhuo Wang, Yifan Zhang, Yan Shen, Huanjun Chen, Baijun Zhang, Hai Zhu","doi":"10.3390/nano14141197","DOIUrl":"https://doi.org/10.3390/nano14141197","url":null,"abstract":"Exciton–polaritons, which are bosonic quasiparticles with an extremely low mass, play a key role in understanding macroscopic quantum effects related to Bose–Einstein condensation (BEC) in solid-state systems. The study of trapped polaritons in a potential well provides an ideal platform for manipulating polariton condensates, enabling polariton lasing with specific formation in k-space. Here, we realize quantized microcavity polariton lasing in simple harmonic oscillator (SHO) states based on spatial localized excitons in InGaN/GaN quantum wells (QWs). Benefiting from the high exciton binding energy (90 meV) and large oscillator strength of the localized exciton, room-temperature (RT) polaritons with large Rabi splitting (61 meV) are obtained in a strongly coupled microcavity. The manipulation of polariton condensates is performed through a parabolic potential well created by optical pump control. Under the confinement situation, trapped polaritons are controlled to be distributed in the selected quantized energy sublevels of the SHO state. The maximum energy spacing of 11.3 meV is observed in the SHO sublevels, indicating the robust polariton trapping of the parabolic potential well. Coherent quantized polariton lasing is achieved in the ground state of the SHO state and the coherence property of the lasing is analyzed through the measurements of spatial interference patterns and g(2)(τ). Our results offer a feasible route to explore the manipulation of macroscopic quantum coherent states and to fabricate novel polariton devices towards room-temperature operations.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"51 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141650322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In recent decades, with the rapid development of the inorganic synthesis and the increasing discharge of pollutants in the process of industrialization, hollow-structured metal oxides (HSMOs) have taken on a striking role in the field of environmental catalysis. This is all due to their unique structural characteristics compared to solid nanoparticles, such as high loading capacity, superior pore permeability, high specific surface area, abundant inner void space, and low density. Although the HSMOs with different morphologies have been reviewed and prospected in the aspect of synthesis strategies and potential applications, there has been no systematic review focusing on the structures and compositions design of HSMOs in the field of environmental catalysis so far. Therefore, this review will mainly focus on the component dependence and controllable structure of HSMOs in the catalytic elimination of different environmental pollutants, including the automobile and stationary source emissions, volatile organic compounds, greenhouse gases, ozone-depleting substances, and other potential pollutants. Moreover, we comprehensively reviewed the applications of the catalysts with hollow structure that are mainly composed of metal oxides such as CeO2, MnOx, CuOx, Co3O4, ZrO2, ZnO, Al3O4, In2O3, NiO, and Fe3O4 in automobile and stationary source emission control, volatile organic compounds emission control, and the conversion of greenhouse gases and ozone-depleting substances. The structure–activity relationship is also briefly discussed. Finally, further challenges and development trends of HSMO catalysts in environmental catalysis are also prospected.
{"title":"The Structures and Compositions Design of the Hollow Micro–Nano-Structured Metal Oxides for Environmental Catalysis","authors":"Jingxin Xu, Yufang Bian, Wenxin Tian, Chao Pan, Cai-e Wu, Leilei Xu, Mei Wu, Mindong Chen","doi":"10.3390/nano14141190","DOIUrl":"https://doi.org/10.3390/nano14141190","url":null,"abstract":"In recent decades, with the rapid development of the inorganic synthesis and the increasing discharge of pollutants in the process of industrialization, hollow-structured metal oxides (HSMOs) have taken on a striking role in the field of environmental catalysis. This is all due to their unique structural characteristics compared to solid nanoparticles, such as high loading capacity, superior pore permeability, high specific surface area, abundant inner void space, and low density. Although the HSMOs with different morphologies have been reviewed and prospected in the aspect of synthesis strategies and potential applications, there has been no systematic review focusing on the structures and compositions design of HSMOs in the field of environmental catalysis so far. Therefore, this review will mainly focus on the component dependence and controllable structure of HSMOs in the catalytic elimination of different environmental pollutants, including the automobile and stationary source emissions, volatile organic compounds, greenhouse gases, ozone-depleting substances, and other potential pollutants. Moreover, we comprehensively reviewed the applications of the catalysts with hollow structure that are mainly composed of metal oxides such as CeO2, MnOx, CuOx, Co3O4, ZrO2, ZnO, Al3O4, In2O3, NiO, and Fe3O4 in automobile and stationary source emission control, volatile organic compounds emission control, and the conversion of greenhouse gases and ozone-depleting substances. The structure–activity relationship is also briefly discussed. Finally, further challenges and development trends of HSMO catalysts in environmental catalysis are also prospected.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"87 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Li Zhu, Junchen Lin, Yixin Zhu, Jie Wu, Xiang Wan, Huabin Sun, Zhihao Yu, Yong Xu, Cheeleong Tan
Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO4 solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device’s electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at −0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence.
{"title":"Flexible Organic Electrochemical Transistors for Energy-Efficient Neuromorphic Computing","authors":"Li Zhu, Junchen Lin, Yixin Zhu, Jie Wu, Xiang Wan, Huabin Sun, Zhihao Yu, Yong Xu, Cheeleong Tan","doi":"10.3390/nano14141195","DOIUrl":"https://doi.org/10.3390/nano14141195","url":null,"abstract":"Brain-inspired flexible neuromorphic devices are of great significance for next-generation high-efficiency wearable sensing and computing systems. In this paper, we propose a flexible organic electrochemical transistor using poly[(bithiophene)-alternate-(2,5-di(2-octyldodecyl)- 3,6-di(thienyl)-pyrrolyl pyrrolidone)] (DPPT-TT) as the organic semiconductor and poly(methyl methacrylate) (PMMA)/LiClO4 solid-state electrolyte as the gate dielectric layer. Under gate voltage modulation, an electric double layer (EDL) forms between the dielectric layer and the channel, allowing the device to operate at low voltages. Furthermore, by leveraging the double layer effect and electrochemical doping within the device, we successfully mimic various synaptic behaviors, including excitatory post-synaptic currents (EPSC), paired-pulse facilitation (PPF), high-pass filtering characteristics, transitions from short-term plasticity (STP) to long-term plasticity (LTP), and demonstrate its image recognition and storage capabilities in a 3 × 3 array. Importantly, the device’s electrical performance remains stable even after bending, achieving ultra-low-power consumption of 2.08 fJ per synaptic event at −0.001 V. This research may contribute to the development of ultra-low-power neuromorphic computing, biomimetic robotics, and artificial intelligence.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rational design of magnetic carbon composites, encompassing both their composition and microstructure, holds significant potential for achieving exceptional electromagnetic wave-absorbing materials (EAMs). In this study, FeCo@CM composites were efficiently fabricated through an advanced microwave plasma-assisted reduction chemical vapor deposition (MPARCVD) technique, offering high efficiency, low cost, and energy-saving benefits. By depositing graphitized carbon microspheres, the dielectric properties were significantly enhanced, resulting in improved electromagnetic wave absorption performances through optimized impedance matching and a synergistic effect with magnetic loss. A systematic investigation revealed that the laminar-stacked structure of FeCo exhibited superior properties compared to its spherical counterpart, supplying a higher number of exposed edges and enhanced catalytic activity, which facilitated the deposition of uniform and low-defect graphitized carbon microspheres. Consequently, the dielectric loss performance of the FeCo@CM composites was dramatically improved due to increased electrical conductivity and the formation of abundant heterogeneous interfaces. At a 40 wt% filling amount and a frequency of 7.84 GHz, the FeCo@CM composites achieved a minimum reflection loss value of −58.2 dB with an effective absorption bandwidth (fE) of 5.13 GHz. This study presents an effective strategy for developing high-performance EAMs.
{"title":"Exploring the Microstructural Effect of FeCo Alloy on Carbon Microsphere Deposition and Enhanced Electromagnetic Wave Absorption","authors":"Xiaoshu Jia, Heng Zhang, Fang Liu, Qiaojun Yi, Chaolong Li, Xiao Wang, Mingxing Piao","doi":"10.3390/nano14141194","DOIUrl":"https://doi.org/10.3390/nano14141194","url":null,"abstract":"The rational design of magnetic carbon composites, encompassing both their composition and microstructure, holds significant potential for achieving exceptional electromagnetic wave-absorbing materials (EAMs). In this study, FeCo@CM composites were efficiently fabricated through an advanced microwave plasma-assisted reduction chemical vapor deposition (MPARCVD) technique, offering high efficiency, low cost, and energy-saving benefits. By depositing graphitized carbon microspheres, the dielectric properties were significantly enhanced, resulting in improved electromagnetic wave absorption performances through optimized impedance matching and a synergistic effect with magnetic loss. A systematic investigation revealed that the laminar-stacked structure of FeCo exhibited superior properties compared to its spherical counterpart, supplying a higher number of exposed edges and enhanced catalytic activity, which facilitated the deposition of uniform and low-defect graphitized carbon microspheres. Consequently, the dielectric loss performance of the FeCo@CM composites was dramatically improved due to increased electrical conductivity and the formation of abundant heterogeneous interfaces. At a 40 wt% filling amount and a frequency of 7.84 GHz, the FeCo@CM composites achieved a minimum reflection loss value of −58.2 dB with an effective absorption bandwidth (fE) of 5.13 GHz. This study presents an effective strategy for developing high-performance EAMs.","PeriodicalId":508599,"journal":{"name":"Nanomaterials","volume":"60 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chia-Ming Yang, Chao-Hui Wei, Jia-Yuan Chang, Chao-Sung Lai
To obtain a high-performance extended gate field-effect transistor for pH detection, hafnium nitride (HfN) was first fabricated on an indium tin oxide on polyethylene terephthalate (ITO/PET) substrate using a high-power impulse magnetron sputter system (HiPIMS) in this study. It can be easily applied in biomedical diagnostic and environmental monitoring applications with the advantages of flexible, disposable, cost-effective, and reliable components. Various duty cycle conditions in HiPIMSs were designed to investigate the corresponding sensing performance and material properties including surface morphology and composition. As the duty cycle increased, the grain size of HfN increased. Additionally, X-ray photoelectron spectroscopy (XPS) analysis illustrated the presence of HfOxNy on the deposited HfN surface. Both behaviors could result in a better pH sensing performance based on the theory of the site-binding model. Subsequently, HfN with a 15% duty cycle exhibited excellent pH sensitivity and linearity, with values of 59.3 mV/pH and 99.8%, respectively; its hysteresis width and drift coefficient were −1 mV and 0.5 mV/h, respectively. Furthermore, this pH-sensing performance remained stable even after 2000 repeated bending cycles. These results indicate the potential and feasibility of this HiPIMS-deposited HfN for future wearable chemical applications.
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