Pub Date : 2022-11-21DOI: 10.15251/jor.2022.186.723
P. Sarkar, S. Panda, B. Maji, A. K. Mukhopadhyayan
The impact of plasmonic confinement induced by the SiO2 nanosphere utilized as a photonic absorber in a solar cell is investigated in this paper. The modified Stober technique is utilized for irradiation experiments using the size and shape of colloidal silica nanoparticles at two dosages of 0.485mg/ml and 0.693mg/ml solutions. The agglomerated silica is placed as an absorbent layer on a solar cell, and the J-V characteristics are studied under solar irradiation. The enhancement in efficiency and Jsc is far greater than predicted induced in photon injection caused by silica nanoparticle coating under coverage limit.
{"title":"Plasmon induced quantified agglomeration of SiO2 nanoparticles to improve in efficiency in solar cell","authors":"P. Sarkar, S. Panda, B. Maji, A. K. Mukhopadhyayan","doi":"10.15251/jor.2022.186.723","DOIUrl":"https://doi.org/10.15251/jor.2022.186.723","url":null,"abstract":"The impact of plasmonic confinement induced by the SiO2 nanosphere utilized as a photonic absorber in a solar cell is investigated in this paper. The modified Stober technique is utilized for irradiation experiments using the size and shape of colloidal silica nanoparticles at two dosages of 0.485mg/ml and 0.693mg/ml solutions. The agglomerated silica is placed as an absorbent layer on a solar cell, and the J-V characteristics are studied under solar irradiation. The enhancement in efficiency and Jsc is far greater than predicted induced in photon injection caused by silica nanoparticle coating under coverage limit.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43918816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-21DOI: 10.15251/jor.2022.186.739
M. Ahmed, A. Bakry, H. Dalir, E. R. Shaaban
Co-precipitation method is used to create various compositions of the bulk sample of Zn1- xNixO (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1). By using an electron beam approach, the required coatings were deposited onto extremely clean glass substrates. The current study examines the structural and optical, characteristics of Ni-doped ZnO thin films. The creation of the hexagonal wurtzite single phase of ZnO was revealed by X-ray diffraction, and it had a strong (002) peak with a peak shift towards a lower angle. It was discovered that the films' crystallite size shrank as the Ni content rose. Investigations were done into how Ni dopant affected the produced thin films' optical and magnetic properties. The optical energy gap decreases from 3.28 to 2.90eV with increasing Ni content. In addition, ferromagnetism increases with increasing Ni concentration at expense of Zn in Zn1-xNixO films . The changes in the optical and magnetic properties of the prepared films were discussed based on the structural modification, which, further, enhances upon Ni-doping
{"title":"Structural, optical and magnetic properties of dilute magnetic semiconductor of Zn1-xNixO thin films for spintronic devices","authors":"M. Ahmed, A. Bakry, H. Dalir, E. R. Shaaban","doi":"10.15251/jor.2022.186.739","DOIUrl":"https://doi.org/10.15251/jor.2022.186.739","url":null,"abstract":"Co-precipitation method is used to create various compositions of the bulk sample of Zn1- xNixO (x = 0, 0.02, 0.04, 0.06, 0.08, and 0.1). By using an electron beam approach, the required coatings were deposited onto extremely clean glass substrates. The current study examines the structural and optical, characteristics of Ni-doped ZnO thin films. The creation of the hexagonal wurtzite single phase of ZnO was revealed by X-ray diffraction, and it had a strong (002) peak with a peak shift towards a lower angle. It was discovered that the films' crystallite size shrank as the Ni content rose. Investigations were done into how Ni dopant affected the produced thin films' optical and magnetic properties. The optical energy gap decreases from 3.28 to 2.90eV with increasing Ni content. In addition, ferromagnetism increases with increasing Ni concentration at expense of Zn in Zn1-xNixO films . The changes in the optical and magnetic properties of the prepared films were discussed based on the structural modification, which, further, enhances upon Ni-doping","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47798669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-21DOI: 10.15251/jor.2022.186.753
A. Merabti, H. Aissani, S. Nour, R. Abdeldjebar, A.A. Djatout
Good light trapping is essential to make high efficiency InGaN-based solar cells. As InGaN wafers are being made increasingly, thinner, light trapping becomes even more important. In this study, we propose a structure of one-dimensional InGaN grating for the InGaN-based solar cells is proposed. The solar energy absorption characteristics of this structure are studied by the the Finite element method (FEM) method. By alternately altering the grating depth and the filling factor, a new type of grating structure is proposed. For such a structure, different gratings are studied. Numerical computation shows that the absorptance of the InGaN grating structure is over 0.88 throughout the entire computational band. The optimum parameters of the proposed structure are period (a = 480 nm), a filling factor (ff = 50 %) and depth (d=210 nm), which indicates the proposed structured surface may have potential applications in solar cells manufacturing.
{"title":"Modeling and analysis of grating structure for enhancing the absorbance in InGaN-based solar cell","authors":"A. Merabti, H. Aissani, S. Nour, R. Abdeldjebar, A.A. Djatout","doi":"10.15251/jor.2022.186.753","DOIUrl":"https://doi.org/10.15251/jor.2022.186.753","url":null,"abstract":"Good light trapping is essential to make high efficiency InGaN-based solar cells. As InGaN wafers are being made increasingly, thinner, light trapping becomes even more important. In this study, we propose a structure of one-dimensional InGaN grating for the InGaN-based solar cells is proposed. The solar energy absorption characteristics of this structure are studied by the the Finite element method (FEM) method. By alternately altering the grating depth and the filling factor, a new type of grating structure is proposed. For such a structure, different gratings are studied. Numerical computation shows that the absorptance of the InGaN grating structure is over 0.88 throughout the entire computational band. The optimum parameters of the proposed structure are period (a = 480 nm), a filling factor (ff = 50 %) and depth (d=210 nm), which indicates the proposed structured surface may have potential applications in solar cells manufacturing.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49407471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-21DOI: 10.15251/jor.2022.186.759
V. Ciupină, M. Albu, A. Caraiane, C. Porosnicu, C. Staicu, V. Nicolescu, R. Manu
To obtain ZrO2 and ZrO2+N2 thin films was used magnetron sputtering in radio frequency mode in a 10-6 mbar high vacuum deposition chamber. Silicon and carbon substrates measuring 12x15mm were used for deposition. The used magnetron system was composed of a single water-cooled cathode, provided with one circular targets of ZrO2 (2 mm thick and 50 mm in diameter) of high purity (99.95%). TDS Analysis of the films was performed. The desorbed species were observed with a QMG 220 Mass spectrometer provided with a W filament. It can be observed that in the case of the ZnO2 film, nitrogen desorption registers two maxima with signal intensity of 9.7x10-12 and 9.0x10-12, reached after 2000s and 4900s respectively. In the case of ZrO2+N2 film, nitrogen desorption shows a pronounced maximum with a signal intensity of 2.4x10-11 reached after 6000s. . The topology the ZrO2 and ZrO2+N2 samples deposited on Si substrates have been investigated by scanning electron microscopy (SEM) using a FEI Inspect S scanning electron microscope ( Hillsboro, Oregon, OR, USA) in high-vacuum modes. For the ZrO2 deposition, the surface appears to have grain-like topology, with a mean dimension of around 150 nm. These structures do not appear for the ZrO2+N2 deposition. Instead, for the ZrO2+N2 sample, small blisters (between 300 nm and 1.000nm) have formed on the surface, as a consequence of injecting N2 during the deposition. Cross-section measurements were also performed to establish the layer thickness. The ZrO2 sample has a measured thickness of 1950nm, while the introduction of N2 gas for the ZrO2+N2 sample had a poisoning effect on the magnetron target that led to a decrease (5 times) in deposition rate, giving this sample a final thickness of 365nm (compared to 1950nm) for the same deposition The crystalline structure was investigated using X-Ray Diffraction (XRD) method. The experimental set-up was composed of a diffractometer equipped with a Cu-Kα X-ray sourse, with a specific wavelength of 0.154nm, in a Bragg-Bretano type geometry. In this way, a crystalline phase corresponding to ZrO2 with a group symmetry Fm-3m (225)-face centered cubic was identified. At the same time, it is observed that the films deposited in the reactive atmosphere show a pronounced amorphization, this most likely being due to the retention of nitrogen which leads to the modification of the network parameters.
{"title":"Nitrogen doped ZrO2 thin films: synthesis and characterization","authors":"V. Ciupină, M. Albu, A. Caraiane, C. Porosnicu, C. Staicu, V. Nicolescu, R. Manu","doi":"10.15251/jor.2022.186.759","DOIUrl":"https://doi.org/10.15251/jor.2022.186.759","url":null,"abstract":"To obtain ZrO2 and ZrO2+N2 thin films was used magnetron sputtering in radio frequency mode in a 10-6 mbar high vacuum deposition chamber. Silicon and carbon substrates measuring 12x15mm were used for deposition. The used magnetron system was composed of a single water-cooled cathode, provided with one circular targets of ZrO2 (2 mm thick and 50 mm in diameter) of high purity (99.95%). TDS Analysis of the films was performed. The desorbed species were observed with a QMG 220 Mass spectrometer provided with a W filament. It can be observed that in the case of the ZnO2 film, nitrogen desorption registers two maxima with signal intensity of 9.7x10-12 and 9.0x10-12, reached after 2000s and 4900s respectively. In the case of ZrO2+N2 film, nitrogen desorption shows a pronounced maximum with a signal intensity of 2.4x10-11 reached after 6000s. . The topology the ZrO2 and ZrO2+N2 samples deposited on Si substrates have been investigated by scanning electron microscopy (SEM) using a FEI Inspect S scanning electron microscope ( Hillsboro, Oregon, OR, USA) in high-vacuum modes. For the ZrO2 deposition, the surface appears to have grain-like topology, with a mean dimension of around 150 nm. These structures do not appear for the ZrO2+N2 deposition. Instead, for the ZrO2+N2 sample, small blisters (between 300 nm and 1.000nm) have formed on the surface, as a consequence of injecting N2 during the deposition. Cross-section measurements were also performed to establish the layer thickness. The ZrO2 sample has a measured thickness of 1950nm, while the introduction of N2 gas for the ZrO2+N2 sample had a poisoning effect on the magnetron target that led to a decrease (5 times) in deposition rate, giving this sample a final thickness of 365nm (compared to 1950nm) for the same deposition The crystalline structure was investigated using X-Ray Diffraction (XRD) method. The experimental set-up was composed of a diffractometer equipped with a Cu-Kα X-ray sourse, with a specific wavelength of 0.154nm, in a Bragg-Bretano type geometry. In this way, a crystalline phase corresponding to ZrO2 with a group symmetry Fm-3m (225)-face centered cubic was identified. At the same time, it is observed that the films deposited in the reactive atmosphere show a pronounced amorphization, this most likely being due to the retention of nitrogen which leads to the modification of the network parameters.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"5 16","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41256891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-03DOI: 10.15251/jor.2022.185.681
Y. Benkrima, A. Souigat, M. E. Soudani, Z. Korichi, H. Bouguettaia
The structure, electronic and magnetic properties of the MgO bulk of (1x2x2) and (1x1x1) atoms for the B4 wurtzite phase, doped by Manganese Mn have been studied. Accordingly, the Mn atom location in the far and near spots was taken into account, as well as recognizing the magnetic interaction between both spots. Such initiative was provided thanks to the use of the density function theorem (DFT). As for the energy gap of the semiconductor MgO, it was calculated by the linearly increasing planar method, and by the local density approximation (LDA), not to mention the generalized gradient approximation (CGA).It is found that the calculated results agree well with other theoretical and experimental findings. Whereas, the energy gap and the total magnetic torque have been recorded for the Mn doped MgO in the (1x2x2) super Celle. Therefore, our given results have shown that the use of the classification-generalized approximation could enable us to provide more precise results of the d orbital composites, and they also added new properties to the new compound.
{"title":"First principles study structural and magnetic properties of Mn doped MgO","authors":"Y. Benkrima, A. Souigat, M. E. Soudani, Z. Korichi, H. Bouguettaia","doi":"10.15251/jor.2022.185.681","DOIUrl":"https://doi.org/10.15251/jor.2022.185.681","url":null,"abstract":"The structure, electronic and magnetic properties of the MgO bulk of (1x2x2) and (1x1x1) atoms for the B4 wurtzite phase, doped by Manganese Mn have been studied. Accordingly, the Mn atom location in the far and near spots was taken into account, as well as recognizing the magnetic interaction between both spots. Such initiative was provided thanks to the use of the density function theorem (DFT). As for the energy gap of the semiconductor MgO, it was calculated by the linearly increasing planar method, and by the local density approximation (LDA), not to mention the generalized gradient approximation (CGA).It is found that the calculated results agree well with other theoretical and experimental findings. Whereas, the energy gap and the total magnetic torque have been recorded for the Mn doped MgO in the (1x2x2) super Celle. Therefore, our given results have shown that the use of the classification-generalized approximation could enable us to provide more precise results of the d orbital composites, and they also added new properties to the new compound.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49656228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-03DOI: 10.15251/jor.2022.185.713
N. A. Niaz, A. Shakoor, F. Hussain, M. Iqbal, N. R. Khalid, M. Saleem, N. Anwar, Jahangir Ahmad
The nanocomposites of doped Polyaniline (PANI) with ZnO-TiO2 nanoparticles have been prepared by in-situ polymerization method. The structural properties of synthesized PANI and PANI/ZnO-TiO2 were studied by X-ray diffraction (XRD) analysis. XRD pattern show that PANI is intercalated into the layers of ZnO-TiO2 successfully and thus the degree of crystallinity increases due to crystalline nature of ZnO-TiO2. FTIR analysis indicated that there is a strong interaction between ZnO-TiO2 nanoparticles and PANI. Electronic properties (Dielectric and Conductivity) of PANI and PANI/ZnO-TiO2 nanocomposite have been investigated between frequency ranges from 20Hz to 01MHz, higher dielectric constants and dielectric losses of PANI/ZnO-TiO2 nanocomposites were found. As the content of ZnO-TiO2 increased, the dielectric constant and loss also increased. The value of dielectric constant for all samples is very high at low frequency but decreases with increase in frequency. Synthesis of PANI/ZnO-TiO2 nanocomposite materials with a large dielectric constant is promising for charge storage devices applications
{"title":"Structural and electronic properties of PANI-ZnO-TiO2 nanocomposite","authors":"N. A. Niaz, A. Shakoor, F. Hussain, M. Iqbal, N. R. Khalid, M. Saleem, N. Anwar, Jahangir Ahmad","doi":"10.15251/jor.2022.185.713","DOIUrl":"https://doi.org/10.15251/jor.2022.185.713","url":null,"abstract":"The nanocomposites of doped Polyaniline (PANI) with ZnO-TiO2 nanoparticles have been prepared by in-situ polymerization method. The structural properties of synthesized PANI and PANI/ZnO-TiO2 were studied by X-ray diffraction (XRD) analysis. XRD pattern show that PANI is intercalated into the layers of ZnO-TiO2 successfully and thus the degree of crystallinity increases due to crystalline nature of ZnO-TiO2. FTIR analysis indicated that there is a strong interaction between ZnO-TiO2 nanoparticles and PANI. Electronic properties (Dielectric and Conductivity) of PANI and PANI/ZnO-TiO2 nanocomposite have been investigated between frequency ranges from 20Hz to 01MHz, higher dielectric constants and dielectric losses of PANI/ZnO-TiO2 nanocomposites were found. As the content of ZnO-TiO2 increased, the dielectric constant and loss also increased. The value of dielectric constant for all samples is very high at low frequency but decreases with increase in frequency. Synthesis of PANI/ZnO-TiO2 nanocomposite materials with a large dielectric constant is promising for charge storage devices applications","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47417672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-03DOI: 10.15251/jor.2022.185.699
A. Ashour, E. E. Assem, E. R. Shaaban
To form a better view of the influences of Al in ZnO, the crystalline structure parameters and morphological (via SEM) of Zn1-xAlxO (x=0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films organized onto glass substrates using by spin coating technique. The effects of Al doping on the structural ZnO nano crystalline films are investigated using (XRD), (EDAX) and (SEM). Rietveld refinement was used to examine the XRD patterns of Zn1- xAlxO thin films. This was done using Fullprof software. The XRD results showed that Al ions successfully replaced the Zn2+ lattice sites without any major change in the structure after Zn2+ substitution, and their crystallinity decreased with increasing Al doping content. Also, The XRD analysis confirmed the hexagonal structure. Lattice constant, Cell volume, Atomic Packing Fraction and surface density have been calculated. The microstructural parameters, crystallite size and lattice strain of Zn1-xAlxO thin films were calculated. The changes in microstructural parameters were discussed as dependent Al concentration. The Zn–O bond lengths and bond angle of Zn1-xAlxO were determined and have changed.
{"title":"Investigation of dilute aluminum doped zinc oxide thin films: structural and morphological properties for varies applicationss","authors":"A. Ashour, E. E. Assem, E. R. Shaaban","doi":"10.15251/jor.2022.185.699","DOIUrl":"https://doi.org/10.15251/jor.2022.185.699","url":null,"abstract":"To form a better view of the influences of Al in ZnO, the crystalline structure parameters and morphological (via SEM) of Zn1-xAlxO (x=0.0, 0.02, 0.04, 0.06, 0.08 and 0.10) thin films organized onto glass substrates using by spin coating technique. The effects of Al doping on the structural ZnO nano crystalline films are investigated using (XRD), (EDAX) and (SEM). Rietveld refinement was used to examine the XRD patterns of Zn1- xAlxO thin films. This was done using Fullprof software. The XRD results showed that Al ions successfully replaced the Zn2+ lattice sites without any major change in the structure after Zn2+ substitution, and their crystallinity decreased with increasing Al doping content. Also, The XRD analysis confirmed the hexagonal structure. Lattice constant, Cell volume, Atomic Packing Fraction and surface density have been calculated. The microstructural parameters, crystallite size and lattice strain of Zn1-xAlxO thin films were calculated. The changes in microstructural parameters were discussed as dependent Al concentration. The Zn–O bond lengths and bond angle of Zn1-xAlxO were determined and have changed.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43038934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-03DOI: 10.15251/jor.2022.185.691
Z. Tiouti, A. Talhi, B. Azeddine, A. Helmaoui
In this study, we use a Monte Carlo calculation code to simulate the concentration of electron-hole pairs generated of each point in the solid targets under a bombardment of Ni63 source for betavoltaic cells; this model is reported to be an accurate representation of electron interaction.From this simulation we can obtain the distribution of electron-hole pairs generated in GaN/GaN junction as a function of the depth, this distribution allowed us to find the concentrations of minority carriers excess depending on the thickness, which can represent as function and inject into the continuity equations for determine the diffusion current and then the characteristics of betavoltaic chosen. The model has been tested for Ni-63/GaN/GaN structure, with energy 17 KeV.
{"title":"Modeling of betavoltaic cells GaN using a Monte Carlo calculation","authors":"Z. Tiouti, A. Talhi, B. Azeddine, A. Helmaoui","doi":"10.15251/jor.2022.185.691","DOIUrl":"https://doi.org/10.15251/jor.2022.185.691","url":null,"abstract":"In this study, we use a Monte Carlo calculation code to simulate the concentration of electron-hole pairs generated of each point in the solid targets under a bombardment of Ni63 source for betavoltaic cells; this model is reported to be an accurate representation of electron interaction.From this simulation we can obtain the distribution of electron-hole pairs generated in GaN/GaN junction as a function of the depth, this distribution allowed us to find the concentrations of minority carriers excess depending on the thickness, which can represent as function and inject into the continuity equations for determine the diffusion current and then the characteristics of betavoltaic chosen. The model has been tested for Ni-63/GaN/GaN structure, with energy 17 KeV.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46480461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-03DOI: 10.15251/jor.2022.185.675
H. M. Ali, I. Khudayer
Silver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 and silver sulfide have been studied.
{"title":"Study structure and optical properties of Ag2Se, Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 thin films","authors":"H. M. Ali, I. Khudayer","doi":"10.15251/jor.2022.185.675","DOIUrl":"https://doi.org/10.15251/jor.2022.185.675","url":null,"abstract":"Silver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 and silver sulfide have been studied.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47210751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-10-25DOI: 10.15251/jor.2022.185.669
K. A. Mohammed, A. Alrubaie, K. M. Ziadan, A. S. Al-Kabbi, R. Zabibah
Hybrid solar cells based on conductive polymer poly(o-toludine) (POT) with Cadmium Selenide nanoparticles (CdSe NPs) bulk heterojunctions (BHJ) were prepared by the direct mixing method and then the optical properties of the prepared materials were analyzed. The photovoltaic response of a hybrid film is studied by I –V measurements under simulated one-sun AM 1.5 illumination (100 mW cm-2). Three different CdSe load was tested to study the effect of CdSe loading on optical properties and efficiency of solar cell. Best ratio was 1:1 were gave 0.28 % efficiency. Also no photovoltaic effect for device with 75% CdSe load.
{"title":"Effect of CdSe loading on bulk heterojunction solar cell parameters","authors":"K. A. Mohammed, A. Alrubaie, K. M. Ziadan, A. S. Al-Kabbi, R. Zabibah","doi":"10.15251/jor.2022.185.669","DOIUrl":"https://doi.org/10.15251/jor.2022.185.669","url":null,"abstract":"Hybrid solar cells based on conductive polymer poly(o-toludine) (POT) with Cadmium Selenide nanoparticles (CdSe NPs) bulk heterojunctions (BHJ) were prepared by the direct mixing method and then the optical properties of the prepared materials were analyzed. The photovoltaic response of a hybrid film is studied by I –V measurements under simulated one-sun AM 1.5 illumination (100 mW cm-2). Three different CdSe load was tested to study the effect of CdSe loading on optical properties and efficiency of solar cell. Best ratio was 1:1 were gave 0.28 % efficiency. Also no photovoltaic effect for device with 75% CdSe load.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42819803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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