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Estimation of the spectral, electrical, and dielectric properties of Mn-Cu-Cd-Gd ferritegraphene nanoplatelets composites Mn-Cu-Cd-Gd铁氧体石墨烯纳米片复合材料的光谱、电学和介电性能的估计
IF 1 4区 材料科学 Pub Date : 2022-09-09 DOI: 10.15251/jor.2022.184.627
Z. Latif, A. U. Rehman, M. Yusuf, N. Amin, M. Arshad
The sol-gel auto combustion route was used to synthesis Mn-Cu-Cd-Gd ferritegraphene nanoplatelets composites having chemical formula Mn0.5Cu0.25Cd0.25Fe1.97Gd0.03O4/Graphene nanoplatelets (MCCFG/GNPs composites) (where GNPs wt% = 0.0wt%, 1.25wt%, 2.5wt%, 3.75wt%, 5wt%). The incorporation of GNPs in the MCCFG sample enhanced the crystallite size from 35.89 nm to 58.92 nm. Raman modes of vibration also confirmed the spinel structure. The resistivity was reduced and optical bandgap energy was increased with increasing content of GNPs. Moreover, both dielectric constant and saturation magnetization was reduced with the insertion of GNPs in the MCCGF spinel lattice.
采用溶胶-凝胶自燃烧的方法合成了Mn-Cu-Cd-Gd铁氧体石墨烯纳米片复合材料,其化学式为mn0.5 cu0.25 cd0.25 fe1.97 gd0.030 o4 /石墨烯纳米片(MCCFG/GNPs复合材料)(其中GNPs wt% = 0.0wt%, 1.25wt%, 2.5wt%, 3.75wt%, 5wt%)。GNPs的加入使mcfg的晶粒尺寸从35.89 nm增加到58.92 nm。拉曼振动模式也证实了尖晶石的结构。随着GNPs含量的增加,电阻率降低,光学带隙能量增加。此外,GNPs在MCCGF尖晶石晶格中的插入降低了介质常数和饱和磁化强度。
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引用次数: 2
Microstructure, surface morphology and anticancer activity of magnesium doped zinc oxide nanoparticles 镁掺杂氧化锌纳米颗粒的微观结构、表面形貌和抗癌活性
IF 1 4区 材料科学 Pub Date : 2022-09-09 DOI: 10.15251/jor.2022.185.637
P. Pachamuthu, A. jeyakumari, N. Srinivasan
Depending upon their origin and synthesis methods, nanoparticles possess unique physicochemical, structural and morphological characteristics, which are important in a wide variety of applications concomitant to various fields. In the present work, Magnesium doped zinc oxide nanoparticles with different concentrations (5 atomic % and 10 atomic %) are prepared and the prepared samples are annealed at 200 ⸰C for 2 h in a muffle furnace. The structure, surface morphology, chemical composition, optical properties and photoluminescence properties were analyzed using standard procedures. The antioxidant potential and cytotoxicity against the breast cancer MDAMB231 cancer cell line of prepared nanoparticles were explored. A simple, economical soft chemical method was used. The XRD analysis confirmed the presence of hexagonal wurtzite phase with a space group P63mc all the prepared samples. The estimated average grain size for the sample MZ2 (18.16 nm) was smaller than the other samples. The SEM micrograph showed that the morphology of the samples were exhibited the rod shape (MZ1, MZ2 and MZ4) and flower shape (MZ3). The purity of the samples was confirmed by EDAX data. The estimated band gap energy of sample MZ1 and sample MZ3 were 3.41e V and 3.38 e V from the UV-vis analysis. The FT-IR spectra of the samples predicted the presence of functional groups for Zn-O and Mg-O bonds. The PL analysis displayed a strong UV emission peak at 387 nm and a green emission peak at 557 nm. The results of the prepared samples prove the potential toxicity against MDAMB231 breast cancer cell line.
根据其来源和合成方法,纳米颗粒具有独特的物理化学、结构和形态特征,这些特征在各个领域的广泛应用中都很重要。在本工作中,制备了不同浓度(5原子%和10原子%)的镁掺杂氧化锌纳米颗粒,并将制备的样品在200⸰在马弗炉中在C中加热2小时。采用标准程序对其结构、表面形貌、化学成分、光学性能和光致发光性能进行了分析。探讨了制备的纳米颗粒对癌症MDAMB231癌症细胞系的抗氧化能力和细胞毒性。采用了一种简单、经济的软化学方法。XRD分析证实,在所有制备的样品中都存在具有空间群P63mc的六方纤锌矿相。样品MZ2(18.16nm)的估计平均晶粒尺寸小于其他样品。SEM显微照片显示,样品的形态表现为棒状(MZ1、MZ2和MZ4)和花状(MZ3)。EDAX数据证实了样品的纯度。根据UV-vis分析,样品MZ1和样品MZ3的估计带隙能量分别为3.41eV和3.38eV。样品的FT-IR光谱预测了Zn-O和Mg-O键官能团的存在。PL分析显示在387nm处的强UV发射峰和在557nm处的绿色发射峰。制备的样品的结果证明了对MDAMB231乳腺癌症细胞系的潜在毒性。
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引用次数: 0
Structural, optical and electrical properties of anhydrous GdCl3 doped PEO polymer electrolyte films 无水GdCl3掺杂PEO聚合物电解质膜的结构、光学和电学性能
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.553
M. Arasakumari
GdCl3 doped PEO polymer electrolyte films were prepared using solution casting technique. XRD patterns, FTIR spectra and optical absorption studies confirm an amorphous nature and the formation of the polymer electrolyte films. The ionic conductivity increases with the GdCl3 content and the maximum value at room temperature is about 1.8310-2 S/cm for 20 mol% GdCl3doped PEO film. This value is more than two orders of magnitude larger than the ionic conductivity of NASICON type Gd-doped solid electrolytes and other polymer electrolytes. The results suggest that the Gd3+ doped PEO polymer electrolyte films are good candidates for future electrochemical devices.
采用溶液浇铸技术制备了掺杂GdCl3的PEO聚合物电解质膜。XRD图谱、FTIR光谱和光学吸收研究证实了聚合物电解质膜的非晶性质和形成。离子电导率随GdCl3含量的增加而增加,室温下的最大值约为1.83对于20mol%GdCl3掺杂的PEO膜为10-2S/cm。该值比NASICON型Gd掺杂的固体电解质和其他聚合物电解质的离子电导率大两个数量级以上。结果表明,掺杂Gd3+的PEO聚合物电解质膜是未来电化学器件的良好候选者。
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引用次数: 0
The effect of molybdenum (Mo) concentrations on the mechanical and magnetic properties of electrodeposited Co rich ternary CoMoW thin films from citrate electrolytic bath 钼(Mo)浓度对柠檬酸盐电解液中电沉积富Co三元CoMoW薄膜机械性能和磁性能的影响
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.507
S. Ananthi, T. S. Senthil, R. Sengodan, R. Kannan
Cobalt–Molybdenum-Tungsten (CoMoW) alloy thin films were prepared through an induced electroplating route from a citrate bath on the surface of the copper electrode at the controlled value of pH 8. The CoMoW thin films have been prepared by varying the Mo concentrations like 0.1, 0.2, 0.3 and 0.4 M at a deposition time of 30 minutes over a plating current potential of 40 mA / cm2. The electrodeposited CoMoW coatings have been investigated with the help of Field Emission Scanning Electron Microscopy (FESEM), powder crystal X-ray diffraction (XRD), Electrochemical studies (impedance and polarization) and Vibrating Sample Magnetometer (VSM) to reveal its respective microstructure-based information, mechanical and soft magnetic nature of the synthesized CoMoW thin layers. The CoMoW thin films of an HCP crystal structure have been attained. The induced electroplated condition such as Mo concentration has a significant impact on the crystal structure system, surface morphology, and soft magnetic performances. The crystalline size of the CoMoW thin layers has varied from 22.66 nm to 42.87 nm. The synthesized CoMoW thin layers were smooth, without cracks and had uniform morphology. All the electroplated CoMoW films have the highest Co content along with low Mo content (Co content gradually decreased while increasing the Mo content in the deposits) and thickness varied from 10 to 20 μm. Through the electrochemical investigation studies, it is concluded that the corrosion rate of CoMoW thin films was slightly increased by increasing the Mo content and the corrosion resistance varied from 80.2 KΩ to 92.7 KΩ. The CoMoW thin alloy films with higher Co content exhibited a lower coercivity value of 3.69 Oe and the saturation magnetization of 49.049 emu /cm2.
在pH控制值为8的条件下,通过柠檬酸盐镀液在铜电极表面感应电镀制备了钴钼钨(CoMoW)合金薄膜。在40 mA / cm2的电势下,通过改变Mo浓度为0.1、0.2、0.3和0.4 M,沉积时间为30分钟,制备了CoMoW薄膜。利用场发射扫描电镜(FESEM)、粉末晶体x射线衍射(XRD)、电化学研究(阻抗和极化)和振动样品磁强计(VSM)对电沉积的CoMoW涂层进行了研究,揭示了其各自的微结构信息、合成的CoMoW薄层的机械和软磁性质。获得了具有HCP晶体结构的CoMoW薄膜。Mo浓度等诱导电镀条件对晶体结构体系、表面形貌和软磁性能有显著影响。CoMoW薄层的晶粒尺寸从22.66 nm到42.87 nm不等。合成的CoMoW薄层光滑,无裂纹,形貌均匀。CoMoW镀层Co含量最高,Mo含量较低(随着镀层中Mo含量的增加,Co含量逐渐降低),镀层厚度在10 ~ 20 μm之间变化。通过电化学研究得出,随着Mo含量的增加,CoMoW薄膜的腐蚀速率略有提高,耐蚀性能在80.2 KΩ ~ 92.7 KΩ之间变化。Co含量较高的CoMoW合金薄膜矫顽力值较低,为3.69 Oe,饱和磁化强度为49.049 emu /cm2。
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引用次数: 0
Synthesis and characterizations of Mg-Cu-Co-Dy ferrites and their composites with graphene nanoplatelets (GNP) Mg-Cu-Co-Dy铁氧体及其与石墨烯纳米片(GNP)复合材料的合成与表征
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.539
M. Akhtar, G. Hussain, M. Yusuf, N. Amin, M. Arshad
Nanocrystalline spinel ferrite Mg0.5Cu0.25Co0.25Fe1.97Dy0.03O4 (MCCD-ferrites) and their composites with graphene nanoplatelets (GNP =0.0%, 1.25% 2.5%, 3.75%, 5%) were prepared by sol-gel technique and sintered at 850 oC for 5 hours. Measurements in the areas of X-ray diffraction, electrical, optical, dielectric and magnetic properties were used to analyze the effects of the inclusion of graphene with ferrite nanoparticles. The crystallite size was determined in the range of 27.62 – 41.46 (nm). The optical bandgap was found in the range of 3.50 eV to 2.88 eV. The dielectric loss was measured between 8 Hz and 8 MHz at room temperature (RT). Magnetic characteristics of the materials are measured and calculated. The magnetic performances of MCCDF-GNP Composites nanoparticles are improved with an increase in saturation (Ms) magnetization. This material can be utilized for humidity sensors, antennae, and micro memory chips.
采用溶胶-凝胶法制备了纳米尖晶石铁素体mg0.5 cu0.25 co0.25 fe1.97 dy0.030 o4 (mccd -铁素体)及其与石墨烯纳米片(GNP分别为0.0%、1.25%、2.5%、3.75%、5%)的复合材料,并在850℃下烧结5 h。通过x射线衍射、电学、光学、电介质和磁性等方面的测量,分析了铁氧体纳米颗粒包裹石墨烯的影响。晶粒尺寸在27.62 ~ 41.46 (nm)之间。光带隙在3.50 ~ 2.88 eV范围内。在室温(RT)下,测量了介电损耗在8 Hz和8 MHz之间。对材料的磁性进行了测量和计算。mcdf - gnp复合纳米颗粒的磁性能随着饱和磁化强度(Ms)的增加而提高。这种材料可用于湿度传感器、天线和微存储器芯片。
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引用次数: 0
Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound 烧结温度对CaBi4Ti4O15化合物结构性能的影响
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.499
I. M. Abdulmajeed, S. Ibraheem
Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050ᶹ C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at1050ᶹ C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 ᶹC exhibits good dielectric properties and lower value of tan .
采用传统陶瓷工艺成功制备了多晶CaBi4Ti4O15(CBT)陶瓷。对所制备的粉末在不同温度下的X射线衍射光谱进行了研究(650℃、850℃和1050℃。烧结温度是获得高结晶度和非常纯的CBT化合物的非常有效的因素。使用X射线衍射分析的产物结构证实,高纯度多晶相的形成揭示了在1050℃时存在铋层状钙钛矿相Aurivilius正交晶体结构ᶹ C.使用场发射扫描电子显微镜对所制备的样品进行形貌分析(FESEM)。对于1050烧结的产品,它显示出在约149-349nm范围内的微晶颗粒ᶹ C、 它显示出致密的微观结构,并存在较大的正交畸变。介电常数和介电损耗是在室温下作为频率的函数进行测量的。CBT的介电常数随烧结温度的升高而增大。此外,在1050烧结的样品ᶹC表现出良好的介电性能和较低的tan值.
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引用次数: 0
Tellurite-filled hexa-circular-shaped PCF with highly nonlinearity, birefringent and near-zero dispersion profile for optical communications 具有高非线性、双折射和近零色散特性的六圆型碲酸盐填充PCF光通信
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.527
Md. S. Hasan Sohag, K. H. Kabir
This manuscript focuses on devising a Tellurite-filled circular-timbered PCF that shows considerably highly birefringent and nonlinear characteristics. The impacts of numerous design parameters, such as birefringence (Br), nonlinear coefficients (NLC), confinement loss (CL), effective mode area (EMA), dispersion, numerical aperture (NA), etc. of the fiber are extensively inspected employing the commercially accessible and simulation- friendly COMSOL Software. Besides, the pertinent modal properties of the modeled fiber are rigorously characterized by operating the full-vector finite element method (FEM) with a perfectly matched layer (PML) boundary condition. The simulated findings affirm that the developed fiber exemplifies an ultra-high Br and NLC of 0.0924 and 18900 W-1Km-1 consecutively, at the operational wavelength of 1.55μm. Notably, the offered PCF also reveals a relatively lower CL, a negative-sloping dispersion and a higher EMA at the same wavelength. The pragmatic execution of the modeled fiber is expected to be doable applying the existing fabrication approaches and it can be applied in miscellaneous identical optical domains, namely polarization retention in long-distance communications, optical switching, sensor and laser layout, supercontinuum generation for frequency metrology and so forth.
本文的重点是设计一种Tellurite填充的圆形木结构PCF,该PCF显示出相当高的双折射和非线性特性。采用商业上可访问且模拟友好的COMSOL软件,对光纤的双折射(Br)、非线性系数(NLC)、约束损耗(CL)、有效模面积(EMA)、色散、数值孔径(NA)等众多设计参数的影响进行了广泛的检查。此外,通过在完全匹配层(PML)边界条件下操作全矢量有限元法(FEM),对建模纤维的相关模态特性进行了严格表征。模拟结果证实,所开发的光纤在1.55μm的工作波长下连续表现出0.0924和18900 W-1Km-1的超高Br和NLC。值得注意的是,所提供的PCF在相同波长下也表现出相对较低的CL、负倾斜色散和较高的EMA。应用现有的制造方法,建模光纤的实际执行是可行的,它可以应用于各种相同的光学领域,即远距离通信中的偏振保持、光学开关、传感器和激光器布局、频率计量的超连续谱生成等。
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引用次数: 1
Effect of annealing on thin film AgInSe2 solar cell 退火对薄膜AgInSe2太阳能电池的影响
IF 1 4区 材料科学 Pub Date : 2022-07-31 DOI: 10.15251/jor.2022.184.519
S. Sobhi, B. H. Hussein
AgInSe2 (AIS) thin films solar cell involving of n-type AgInSe2 and Si of p-type substrate by using thermal evaporation method. The influence of annealing of the preparation AgInSe2 were considered to find the best properties of solar device. Thin film AIS have been deposited under the vacuum of 1.5*10-6 Torr with (400) nm thickness at R.T and annealing temperatures (473,573) K. Polycrystalline tetragonal structure for AIS thin films from XRD and increasing of surface roughness from AFM, energy gap values decreasing with increasing annealing temperatures, all films were negative type, I-V characteristics show increasing of efficiency with increasing of annealing temperatures.
采用热蒸发法,采用n型AgInSe2和p型衬底Si组成的AgInSe2 (AIS)薄膜太阳能电池。考虑了退火对制备AgInSe2的影响,找到了太阳能器件的最佳性能。在1.5*10-6 Torr的真空条件下,在温度和退火温度(473,573)k下沉积了厚度为(400)nm的AIS薄膜,XRD分析表明AIS薄膜呈多晶四方结构,AFM分析表明AIS薄膜表面粗糙度增大,能隙值随退火温度的升高而减小,薄膜均为负型,I-V特性随退火温度的升高而提高。
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引用次数: 0
Study and modeling of photonic crystal fibers 光子晶体光纤的研究与建模
IF 1 4区 材料科学 Pub Date : 2022-06-01 DOI: 10.15251/jor.2022.184.491
H. Moughli, Y. Mouloudi, A. Merabti
"Optical fiber is a light guide which today constitutes the preferred medium for the transport of information. But, in order to meet the increasing needs generated by the development of the Internet in particular, it was necessary to always improve the propagation characteristics in the fibers. A new generation of fibers has been designed with the aim of obtaining lower losses and better performance than classical fibers. This work presents a design of hexagonal photonic crystal fiber (PCF) geometry for analyzing different optical properties with respect to wavelength ranging. This geometry has been used for analyzing effective refractive index, dispersion, effective mode area, nonlinear coefficient and birefringence. Silica glass is chosen as background material and the cladding region is made of air hole layers. This work is based on the modeling and analysis of the propagation characteristics of waves in a photonic crystal fiber."
“光纤是一种光导,如今已成为信息传输的首选介质。但是,为了满足特别是互联网发展带来的日益增长的需求,有必要始终改善光纤中的传播特性。新一代光纤的设计目的是获得更低的损耗和更好的性能与传统纤维相比。本工作提出了一种六边形光子晶体光纤(PCF)几何结构的设计,用于分析波长范围内的不同光学特性。该几何结构已用于分析有效折射率、色散、有效模面积、非线性系数和双折射率。选择二氧化硅玻璃作为背景材料,并且包层区域由气孔层制成。这项工作是基于对波在光子晶体光纤中传播特性的建模和分析。“
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引用次数: 1
Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs 双InGaAs/InAs通道对inp基hemt直流和射频性能的影响
IF 1 4区 材料科学 Pub Date : 2022-06-01 DOI: 10.15251/jor.2022.183.411
H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun
The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
为了改善InP基HEMT的直流和射频特性,设计了双InGaAs/InAs沟道结构,并对其进行了数值模拟研究。分析了饱和沟道电流、跨导、亚阈值斜率、漏极诱导势垒降低和频率特性。对具有双InGaAs/InAs沟道和InGaAs沟道的器件进行了比较。通过使用双InGaAs/InAs沟道,获得了1019.7mS/mm的最大跨导,并且还获得了较低的亚阈值斜率值和漏极引起的势垒降低。具有双InGaAs/InAs沟道结构的器件之所以具有优异的性能,主要是由于增强了沟道区电子的限制。此外,在双InGaAs/InAs沟道结构中获得了758.7GHz的最大振荡频率。这些结果表明,具有双InGaAs/InAs沟道结构的InP基HEMT是一种很有前途的高频应用候选者。
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引用次数: 1
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Journal of Ovonic Research
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