Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.553
M. Arasakumari
GdCl3 doped PEO polymer electrolyte films were prepared using solution casting technique. XRD patterns, FTIR spectra and optical absorption studies confirm an amorphous nature and the formation of the polymer electrolyte films. The ionic conductivity increases with the GdCl3 content and the maximum value at room temperature is about 1.8310-2 S/cm for 20 mol% GdCl3doped PEO film. This value is more than two orders of magnitude larger than the ionic conductivity of NASICON type Gd-doped solid electrolytes and other polymer electrolytes. The results suggest that the Gd3+ doped PEO polymer electrolyte films are good candidates for future electrochemical devices.
{"title":"Structural, optical and electrical properties of anhydrous GdCl3 doped PEO polymer electrolyte films","authors":"M. Arasakumari","doi":"10.15251/jor.2022.184.553","DOIUrl":"https://doi.org/10.15251/jor.2022.184.553","url":null,"abstract":"GdCl3 doped PEO polymer electrolyte films were prepared using solution casting technique. XRD patterns, FTIR spectra and optical absorption studies confirm an amorphous nature and the formation of the polymer electrolyte films. The ionic conductivity increases with the GdCl3 content and the maximum value at room temperature is about 1.8310-2 S/cm for 20 mol% GdCl3doped PEO film. This value is more than two orders of magnitude larger than the ionic conductivity of NASICON type Gd-doped solid electrolytes and other polymer electrolytes. The results suggest that the Gd3+ doped PEO polymer electrolyte films are good candidates for future electrochemical devices.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45605508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.507
S. Ananthi, T. S. Senthil, R. Sengodan, R. Kannan
Cobalt–Molybdenum-Tungsten (CoMoW) alloy thin films were prepared through an induced electroplating route from a citrate bath on the surface of the copper electrode at the controlled value of pH 8. The CoMoW thin films have been prepared by varying the Mo concentrations like 0.1, 0.2, 0.3 and 0.4 M at a deposition time of 30 minutes over a plating current potential of 40 mA / cm2. The electrodeposited CoMoW coatings have been investigated with the help of Field Emission Scanning Electron Microscopy (FESEM), powder crystal X-ray diffraction (XRD), Electrochemical studies (impedance and polarization) and Vibrating Sample Magnetometer (VSM) to reveal its respective microstructure-based information, mechanical and soft magnetic nature of the synthesized CoMoW thin layers. The CoMoW thin films of an HCP crystal structure have been attained. The induced electroplated condition such as Mo concentration has a significant impact on the crystal structure system, surface morphology, and soft magnetic performances. The crystalline size of the CoMoW thin layers has varied from 22.66 nm to 42.87 nm. The synthesized CoMoW thin layers were smooth, without cracks and had uniform morphology. All the electroplated CoMoW films have the highest Co content along with low Mo content (Co content gradually decreased while increasing the Mo content in the deposits) and thickness varied from 10 to 20 μm. Through the electrochemical investigation studies, it is concluded that the corrosion rate of CoMoW thin films was slightly increased by increasing the Mo content and the corrosion resistance varied from 80.2 KΩ to 92.7 KΩ. The CoMoW thin alloy films with higher Co content exhibited a lower coercivity value of 3.69 Oe and the saturation magnetization of 49.049 emu /cm2.
{"title":"The effect of molybdenum (Mo) concentrations on the mechanical and magnetic properties of electrodeposited Co rich ternary CoMoW thin films from citrate electrolytic bath","authors":"S. Ananthi, T. S. Senthil, R. Sengodan, R. Kannan","doi":"10.15251/jor.2022.184.507","DOIUrl":"https://doi.org/10.15251/jor.2022.184.507","url":null,"abstract":"Cobalt–Molybdenum-Tungsten (CoMoW) alloy thin films were prepared through an induced electroplating route from a citrate bath on the surface of the copper electrode at the controlled value of pH 8. The CoMoW thin films have been prepared by varying the Mo concentrations like 0.1, 0.2, 0.3 and 0.4 M at a deposition time of 30 minutes over a plating current potential of 40 mA / cm2. The electrodeposited CoMoW coatings have been investigated with the help of Field Emission Scanning Electron Microscopy (FESEM), powder crystal X-ray diffraction (XRD), Electrochemical studies (impedance and polarization) and Vibrating Sample Magnetometer (VSM) to reveal its respective microstructure-based information, mechanical and soft magnetic nature of the synthesized CoMoW thin layers. The CoMoW thin films of an HCP crystal structure have been attained. The induced electroplated condition such as Mo concentration has a significant impact on the crystal structure system, surface morphology, and soft magnetic performances. The crystalline size of the CoMoW thin layers has varied from 22.66 nm to 42.87 nm. The synthesized CoMoW thin layers were smooth, without cracks and had uniform morphology. All the electroplated CoMoW films have the highest Co content along with low Mo content (Co content gradually decreased while increasing the Mo content in the deposits) and thickness varied from 10 to 20 μm. Through the electrochemical investigation studies, it is concluded that the corrosion rate of CoMoW thin films was slightly increased by increasing the Mo content and the corrosion resistance varied from 80.2 KΩ to 92.7 KΩ. The CoMoW thin alloy films with higher Co content exhibited a lower coercivity value of 3.69 Oe and the saturation magnetization of 49.049 emu /cm2.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46147010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.539
M. Akhtar, G. Hussain, M. Yusuf, N. Amin, M. Arshad
Nanocrystalline spinel ferrite Mg0.5Cu0.25Co0.25Fe1.97Dy0.03O4 (MCCD-ferrites) and their composites with graphene nanoplatelets (GNP =0.0%, 1.25% 2.5%, 3.75%, 5%) were prepared by sol-gel technique and sintered at 850 oC for 5 hours. Measurements in the areas of X-ray diffraction, electrical, optical, dielectric and magnetic properties were used to analyze the effects of the inclusion of graphene with ferrite nanoparticles. The crystallite size was determined in the range of 27.62 – 41.46 (nm). The optical bandgap was found in the range of 3.50 eV to 2.88 eV. The dielectric loss was measured between 8 Hz and 8 MHz at room temperature (RT). Magnetic characteristics of the materials are measured and calculated. The magnetic performances of MCCDF-GNP Composites nanoparticles are improved with an increase in saturation (Ms) magnetization. This material can be utilized for humidity sensors, antennae, and micro memory chips.
{"title":"Synthesis and characterizations of Mg-Cu-Co-Dy ferrites and their composites with graphene nanoplatelets (GNP)","authors":"M. Akhtar, G. Hussain, M. Yusuf, N. Amin, M. Arshad","doi":"10.15251/jor.2022.184.539","DOIUrl":"https://doi.org/10.15251/jor.2022.184.539","url":null,"abstract":"Nanocrystalline spinel ferrite Mg0.5Cu0.25Co0.25Fe1.97Dy0.03O4 (MCCD-ferrites) and their composites with graphene nanoplatelets (GNP =0.0%, 1.25% 2.5%, 3.75%, 5%) were prepared by sol-gel technique and sintered at 850 oC for 5 hours. Measurements in the areas of X-ray diffraction, electrical, optical, dielectric and magnetic properties were used to analyze the effects of the inclusion of graphene with ferrite nanoparticles. The crystallite size was determined in the range of 27.62 – 41.46 (nm). The optical bandgap was found in the range of 3.50 eV to 2.88 eV. The dielectric loss was measured between 8 Hz and 8 MHz at room temperature (RT). Magnetic characteristics of the materials are measured and calculated. The magnetic performances of MCCDF-GNP Composites nanoparticles are improved with an increase in saturation (Ms) magnetization. This material can be utilized for humidity sensors, antennae, and micro memory chips.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46288789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.499
I. M. Abdulmajeed, S. Ibraheem
Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050ᶹ C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at1050ᶹ C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 ᶹC exhibits good dielectric properties and lower value of tan .
{"title":"Effect of sintering temperature on the structural properties for CaBi4Ti4O15 compound","authors":"I. M. Abdulmajeed, S. Ibraheem","doi":"10.15251/jor.2022.184.499","DOIUrl":"https://doi.org/10.15251/jor.2022.184.499","url":null,"abstract":"Polycrystalline CaBi4Ti4O15 (CBT) ceramics were successfully prepared by traditional ceramic technique. The X-ray diffraction spectrum of produced powder was studied at different temperatures (650 C, 850 C, and 1050C. The sintering temperature is very effective factor to obtained high crystallinity with very pure for CBT compound. The product structures analyzed using X-ray diffraction, it confirms, high purity polycrystalline phase formation revealed the existence of bismuth layered perovskite phase Aurivillius orthorhombic crystal structure at 1050ᶹ C. The produced samples' A field emission scanning electron microscope was used to analyze the morphologies (FESEM). It shows crystallites particles in the range about 149-349 nm for the product sintered at1050ᶹ C, it shows a dense microstructure with the presence of large orthorhombic distortion. The dielectric constant and dielectric loss were measured at room temperature as a function of frequency. The dielectric constant of CBT increases in sintering temperature. Moreover, the samples sintered at 1050 ᶹC exhibits good dielectric properties and lower value of tan .","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46466678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.527
Md. S. Hasan Sohag, K. H. Kabir
This manuscript focuses on devising a Tellurite-filled circular-timbered PCF that shows considerably highly birefringent and nonlinear characteristics. The impacts of numerous design parameters, such as birefringence (Br), nonlinear coefficients (NLC), confinement loss (CL), effective mode area (EMA), dispersion, numerical aperture (NA), etc. of the fiber are extensively inspected employing the commercially accessible and simulation- friendly COMSOL Software. Besides, the pertinent modal properties of the modeled fiber are rigorously characterized by operating the full-vector finite element method (FEM) with a perfectly matched layer (PML) boundary condition. The simulated findings affirm that the developed fiber exemplifies an ultra-high Br and NLC of 0.0924 and 18900 W-1Km-1 consecutively, at the operational wavelength of 1.55μm. Notably, the offered PCF also reveals a relatively lower CL, a negative-sloping dispersion and a higher EMA at the same wavelength. The pragmatic execution of the modeled fiber is expected to be doable applying the existing fabrication approaches and it can be applied in miscellaneous identical optical domains, namely polarization retention in long-distance communications, optical switching, sensor and laser layout, supercontinuum generation for frequency metrology and so forth.
{"title":"Tellurite-filled hexa-circular-shaped PCF with highly nonlinearity, birefringent and near-zero dispersion profile for optical communications","authors":"Md. S. Hasan Sohag, K. H. Kabir","doi":"10.15251/jor.2022.184.527","DOIUrl":"https://doi.org/10.15251/jor.2022.184.527","url":null,"abstract":"This manuscript focuses on devising a Tellurite-filled circular-timbered PCF that shows considerably highly birefringent and nonlinear characteristics. The impacts of numerous design parameters, such as birefringence (Br), nonlinear coefficients (NLC), confinement loss (CL), effective mode area (EMA), dispersion, numerical aperture (NA), etc. of the fiber are extensively inspected employing the commercially accessible and simulation- friendly COMSOL Software. Besides, the pertinent modal properties of the modeled fiber are rigorously characterized by operating the full-vector finite element method (FEM) with a perfectly matched layer (PML) boundary condition. The simulated findings affirm that the developed fiber exemplifies an ultra-high Br and NLC of 0.0924 and 18900 W-1Km-1 consecutively, at the operational wavelength of 1.55μm. Notably, the offered PCF also reveals a relatively lower CL, a negative-sloping dispersion and a higher EMA at the same wavelength. The pragmatic execution of the modeled fiber is expected to be doable applying the existing fabrication approaches and it can be applied in miscellaneous identical optical domains, namely polarization retention in long-distance communications, optical switching, sensor and laser layout, supercontinuum generation for frequency metrology and so forth.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48750209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-31DOI: 10.15251/jor.2022.184.519
S. Sobhi, B. H. Hussein
AgInSe2 (AIS) thin films solar cell involving of n-type AgInSe2 and Si of p-type substrate by using thermal evaporation method. The influence of annealing of the preparation AgInSe2 were considered to find the best properties of solar device. Thin film AIS have been deposited under the vacuum of 1.5*10-6 Torr with (400) nm thickness at R.T and annealing temperatures (473,573) K. Polycrystalline tetragonal structure for AIS thin films from XRD and increasing of surface roughness from AFM, energy gap values decreasing with increasing annealing temperatures, all films were negative type, I-V characteristics show increasing of efficiency with increasing of annealing temperatures.
{"title":"Effect of annealing on thin film AgInSe2 solar cell","authors":"S. Sobhi, B. H. Hussein","doi":"10.15251/jor.2022.184.519","DOIUrl":"https://doi.org/10.15251/jor.2022.184.519","url":null,"abstract":"AgInSe2 (AIS) thin films solar cell involving of n-type AgInSe2 and Si of p-type substrate by using thermal evaporation method. The influence of annealing of the preparation AgInSe2 were considered to find the best properties of solar device. Thin film AIS have been deposited under the vacuum of 1.5*10-6 Torr with (400) nm thickness at R.T and annealing temperatures (473,573) K. Polycrystalline tetragonal structure for AIS thin films from XRD and increasing of surface roughness from AFM, energy gap values decreasing with increasing annealing temperatures, all films were negative type, I-V characteristics show increasing of efficiency with increasing of annealing temperatures.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46727894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.15251/jor.2022.184.491
H. Moughli, Y. Mouloudi, A. Merabti
"Optical fiber is a light guide which today constitutes the preferred medium for the transport of information. But, in order to meet the increasing needs generated by the development of the Internet in particular, it was necessary to always improve the propagation characteristics in the fibers. A new generation of fibers has been designed with the aim of obtaining lower losses and better performance than classical fibers. This work presents a design of hexagonal photonic crystal fiber (PCF) geometry for analyzing different optical properties with respect to wavelength ranging. This geometry has been used for analyzing effective refractive index, dispersion, effective mode area, nonlinear coefficient and birefringence. Silica glass is chosen as background material and the cladding region is made of air hole layers. This work is based on the modeling and analysis of the propagation characteristics of waves in a photonic crystal fiber."
{"title":"Study and modeling of photonic crystal fibers","authors":"H. Moughli, Y. Mouloudi, A. Merabti","doi":"10.15251/jor.2022.184.491","DOIUrl":"https://doi.org/10.15251/jor.2022.184.491","url":null,"abstract":"\"Optical fiber is a light guide which today constitutes the preferred medium for the transport of information. But, in order to meet the increasing needs generated by the development of the Internet in particular, it was necessary to always improve the propagation characteristics in the fibers. A new generation of fibers has been designed with the aim of obtaining lower losses and better performance than classical fibers. This work presents a design of hexagonal photonic crystal fiber (PCF) geometry for analyzing different optical properties with respect to wavelength ranging. This geometry has been used for analyzing effective refractive index, dispersion, effective mode area, nonlinear coefficient and birefringence. Silica glass is chosen as background material and the cladding region is made of air hole layers. This work is based on the modeling and analysis of the propagation characteristics of waves in a photonic crystal fiber.\"","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45154688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.15251/jor.2022.183.411
H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun
The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
{"title":"Influence of double InGaAs/InAs channel on DC and RF performances of InP-based HEMTs","authors":"H. Hao, M. Su, H. Wu, H. Mei, R. Yao, F. Liu, H. Wen, S. X. Sun","doi":"10.15251/jor.2022.183.411","DOIUrl":"https://doi.org/10.15251/jor.2022.183.411","url":null,"abstract":"The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47789530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.15251/jor.2022.183.395
A. Islam, N. Bin Alamgir, S. Chowdhury, S. M. Billah
In this study, numerical analysis on an Sn-based planner heterojunction perovskite device structure of Glass/ FTO/ ZnO/ CH3NH3SnI3/ CZTS/ Metal, with CH3NH3SnI3 as an absorber layer, was performed by using the solar cell device simulator SCAPS 1D. As an electron transport layer (ETL) and a hole transport layer (HTL), inorganic materials ZnO and CZTS (kesterite) were used. To optimize the device, the thickness of the absorber, electron, and hole transport layers, defect density, and absorber doping concentrations were varied, and their impact on device performance was evaluated. The effect of temperature and work function of various anode materials were also investigated. The optimum absorber layer thickness was found at 750 nm for the proposed structure. The acceptor concentration with a reduced defect density of the absorber layer enhances device performance significantly. For better performance, a higher work function anode material is required. The optimized solar cell achieved a maximum power conversion efficiency of 30.41% with an open-circuit voltage of 1.03 V, a short circuit current density of 34.31 mA/cm2, and a Fill Factor 86.39%. The proposed cell structure also possesses an excellent performance under high operating temperature indicating great promise for eco-friendly, low-cost solar energy harvesting.
{"title":"Lead-free organic inorganic halide perovskite solar cell with over 30% efficiency","authors":"A. Islam, N. Bin Alamgir, S. Chowdhury, S. M. Billah","doi":"10.15251/jor.2022.183.395","DOIUrl":"https://doi.org/10.15251/jor.2022.183.395","url":null,"abstract":"In this study, numerical analysis on an Sn-based planner heterojunction perovskite device structure of Glass/ FTO/ ZnO/ CH3NH3SnI3/ CZTS/ Metal, with CH3NH3SnI3 as an absorber layer, was performed by using the solar cell device simulator SCAPS 1D. As an electron transport layer (ETL) and a hole transport layer (HTL), inorganic materials ZnO and CZTS (kesterite) were used. To optimize the device, the thickness of the absorber, electron, and hole transport layers, defect density, and absorber doping concentrations were varied, and their impact on device performance was evaluated. The effect of temperature and work function of various anode materials were also investigated. The optimum absorber layer thickness was found at 750 nm for the proposed structure. The acceptor concentration with a reduced defect density of the absorber layer enhances device performance significantly. For better performance, a higher work function anode material is required. The optimized solar cell achieved a maximum power conversion efficiency of 30.41% with an open-circuit voltage of 1.03 V, a short circuit current density of 34.31 mA/cm2, and a Fill Factor 86.39%. The proposed cell structure also possesses an excellent performance under high operating temperature indicating great promise for eco-friendly, low-cost solar energy harvesting.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47648859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.15251/jor.2022.183.453
K. Sridevi, L. Prasad, B. Sangeetha, S. Sivakumar
Nanocomposites of ZnO-TiO2 were synthesized by using zinc chloride, titanium tetrachloride, ethanol and benzyl alcohol and diethyl ether by using Sol-Gel technique. Crystalline nature of the prepared material was analyzed using XRD study. Band gap of the material found at 3.05eV. In the PL spectra, the peak giving emission is found at 430nm and at 615nm. To confirm the ferromagnetic ordering, the VSM study was done. Morphology study was carried out with SEM images.
{"title":"Structural and optical study of ZnO-TiO2 nanocomposites","authors":"K. Sridevi, L. Prasad, B. Sangeetha, S. Sivakumar","doi":"10.15251/jor.2022.183.453","DOIUrl":"https://doi.org/10.15251/jor.2022.183.453","url":null,"abstract":"Nanocomposites of ZnO-TiO2 were synthesized by using zinc chloride, titanium tetrachloride, ethanol and benzyl alcohol and diethyl ether by using Sol-Gel technique. Crystalline nature of the prepared material was analyzed using XRD study. Band gap of the material found at 3.05eV. In the PL spectra, the peak giving emission is found at 430nm and at 615nm. To confirm the ferromagnetic ordering, the VSM study was done. Morphology study was carried out with SEM images.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47660646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：