Pub Date : 2023-02-20DOI: 10.15251/jor.2023.191.81
M. Gassoumi, A. Helali, Z. Elleuch, N. Boughdiri, H. Guesmi, S. Rejab, H. Maaref
When the AlGaN/GaN high electron mobility transistor (HEMT) is strongly biased, the speed of the electrons in the channel increases, which leads to an injection of electrons into the buffer, and consequently the appearance of the "short channel effect" phenomenon, which limits the performance of the component to overcome this effect and increase the power/frequency performance of the component, one solution consists in using a confinement barrier. This involves placing an electrostatic barrier under the GaN channel so as to block the injection of electrons into the buffer layer when the transistor is highly biased, and a BGaN confinement barrier because this semiconductor has very interesting physical properties, as well as better electrical isolation between the well and the substrate thanks to the optimization of the buffer. In this paper, the main objective is to study the effect of adding BGaN confinement barrier and its influence on transistor performance.
{"title":"Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer","authors":"M. Gassoumi, A. Helali, Z. Elleuch, N. Boughdiri, H. Guesmi, S. Rejab, H. Maaref","doi":"10.15251/jor.2023.191.81","DOIUrl":"https://doi.org/10.15251/jor.2023.191.81","url":null,"abstract":"When the AlGaN/GaN high electron mobility transistor (HEMT) is strongly biased, the speed of the electrons in the channel increases, which leads to an injection of electrons into the buffer, and consequently the appearance of the \"short channel effect\" phenomenon, which limits the performance of the component to overcome this effect and increase the power/frequency performance of the component, one solution consists in using a confinement barrier. This involves placing an electrostatic barrier under the GaN channel so as to block the injection of electrons into the buffer layer when the transistor is highly biased, and a BGaN confinement barrier because this semiconductor has very interesting physical properties, as well as better electrical isolation between the well and the substrate thanks to the optimization of the buffer. In this paper, the main objective is to study the effect of adding BGaN confinement barrier and its influence on transistor performance.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41504431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-20DOI: 10.15251/jor.2023.191.87
M. Velliangiri, M. Karthikeyan, G. Sureshkannan
Powder metallurgy has made it easier to develop Ultra high Al-Gr (5 wt% Gr) composite materials for commercial solar thermal collectors. This work seeks an optimum aluminumgraphene composite with superior thermo-mechanical properties for the thermal collector. Experimentally found that an AMMC matrix with 1.0 wt% of Gr has 282 W/mK thermal conductivity, 129 percent developed than Al (123 W/mK), and also found Al+Gr has a lower thermal expansion coefficient than pure Al. Predicted different composite densities and focused to retain 96.5 percent of aluminum density after sintering. Investigated analytical techniques and included some investigation like Raman spectroscopy, X-ray diffraction, FESM, and electricity-dispersive X-ray grain size and property and also identified high-quality composites and predicted their homogeneity and invulnerability. Predicted suitable Sintering temperature was 626 degrees Celsius which increased from 300 degrees Celsius. Energy and thermal conductivity were found that increases with increasing temperature and compared to pure Al. According to this investigation, when increased the graphene weight percentage proportion from 0 to 5.0 wt%. Results show that conductivity increases from 210 to 412 W/mK and mechanical characteristics slightly drop from 16 to 19% as pH rises from 5 to 5.5. Based on this investigation Al+Gr composites may be used for solar thermal collectors and heat sinks and also appropriate ultra-high Al+5.5 wt% suitable for solar collectors.
{"title":"The development of ultra-high aluminium graphene metal matrix composites (MMC) and improved the thermo-mechanical properties","authors":"M. Velliangiri, M. Karthikeyan, G. Sureshkannan","doi":"10.15251/jor.2023.191.87","DOIUrl":"https://doi.org/10.15251/jor.2023.191.87","url":null,"abstract":"Powder metallurgy has made it easier to develop Ultra high Al-Gr (5 wt% Gr) composite materials for commercial solar thermal collectors. This work seeks an optimum aluminumgraphene composite with superior thermo-mechanical properties for the thermal collector. Experimentally found that an AMMC matrix with 1.0 wt% of Gr has 282 W/mK thermal conductivity, 129 percent developed than Al (123 W/mK), and also found Al+Gr has a lower thermal expansion coefficient than pure Al. Predicted different composite densities and focused to retain 96.5 percent of aluminum density after sintering. Investigated analytical techniques and included some investigation like Raman spectroscopy, X-ray diffraction, FESM, and electricity-dispersive X-ray grain size and property and also identified high-quality composites and predicted their homogeneity and invulnerability. Predicted suitable Sintering temperature was 626 degrees Celsius which increased from 300 degrees Celsius. Energy and thermal conductivity were found that increases with increasing temperature and compared to pure Al. According to this investigation, when increased the graphene weight percentage proportion from 0 to 5.0 wt%. Results show that conductivity increases from 210 to 412 W/mK and mechanical characteristics slightly drop from 16 to 19% as pH rises from 5 to 5.5. Based on this investigation Al+Gr composites may be used for solar thermal collectors and heat sinks and also appropriate ultra-high Al+5.5 wt% suitable for solar collectors.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46807989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-20DOI: 10.15251/jor.2023.191.113
A. Almeshal, M. Musa Saad H.-E., B. Alsobhi
With the dawning of 21st century, governments faced three urgent challenges, global economic crisis, energy crisis and global warming. So, the research goals have directed on developing novel renewable-energy technologies as suitable alternative sources of the traditional energy that addresses these problems. Photovoltaic based solar cells technology gives sustainable solutions and depends on inorganic materials with specific properties. Among this family, halide perovskites (MBX3) have been investigated during the last five years. Besides studying their unique properties as flexible structures, high stability, tunable semiconductor band-gap (Eg 2.50 eV), high charge-carrier mobility and large optical absorption, research also seek for promising and multifaceted electroptical applications that give an amazing power efficiency (~24.0 %) in photovoltaic technology. The current challenge is to synthesis MBX3 materials provide suitable properties, include notable chemical stability at high temperatures, high electrical power efficiency, broad emission and tunable semiconducting Eg. Motivated by the site substitution effect, we extended this concept to build a series of cesium-metalloid MBX3 (M1+ = Cs; B2+ = Si, Ge, Sn, Pb; X– = Cl, Br, I), and investigate their structural, stability and optoelectronic properties. We expect these investigations will provide inspiration for an innovation of such MBX3 materials in photovoltaic applications.
{"title":"Cesium-metalloid halide perovskites MBX3 (M1+= Cs; B2+= Si, Ge, Sn, Pb; X–= Cl, Br, I) as semiconductor photovoltaic materials for sustainable renewable-energy applications","authors":"A. Almeshal, M. Musa Saad H.-E., B. Alsobhi","doi":"10.15251/jor.2023.191.113","DOIUrl":"https://doi.org/10.15251/jor.2023.191.113","url":null,"abstract":"With the dawning of 21st century, governments faced three urgent challenges, global economic crisis, energy crisis and global warming. So, the research goals have directed on developing novel renewable-energy technologies as suitable alternative sources of the traditional energy that addresses these problems. Photovoltaic based solar cells technology gives sustainable solutions and depends on inorganic materials with specific properties. Among this family, halide perovskites (MBX3) have been investigated during the last five years. Besides studying their unique properties as flexible structures, high stability, tunable semiconductor band-gap (Eg 2.50 eV), high charge-carrier mobility and large optical absorption, research also seek for promising and multifaceted electroptical applications that give an amazing power efficiency (~24.0 %) in photovoltaic technology. The current challenge is to synthesis MBX3 materials provide suitable properties, include notable chemical stability at high temperatures, high electrical power efficiency, broad emission and tunable semiconducting Eg. Motivated by the site substitution effect, we extended this concept to build a series of cesium-metalloid MBX3 (M1+ = Cs; B2+ = Si, Ge, Sn, Pb; X– = Cl, Br, I), and investigate their structural, stability and optoelectronic properties. We expect these investigations will provide inspiration for an innovation of such MBX3 materials in photovoltaic applications.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42145177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-20DOI: 10.15251/jor.2023.191.105
K. I. Hussein, R. A. Al-Qahtani, N. Alzedanie, S. Muhammad, M. Alqahtani, I. S. Asiri, M. Reben, E. Yousef
The novel glasses within composition: 62TeO2-5K2TeO3-20ZnO-10Nb2O5-3PbF2 and 62TeO2-5K2TeO3-20ZnO-10Nb2O5-3PbF2-2Er2O3 in mol% were fabricated by using meltquenching technique. The magnetic properties Viz; Faraday effect and the Verdet constant at wavelength of laser beam (λ = 632 nm) were measured. The prepared sample with doped Er3+ has the highest value of Verdet constant (= 0.104min/G.cm) which depends on the polarizability of Er3+ ions. Moreover, the optical properties of present glass estimated by using UV-Vis-NIR spectroscopy. The oxygen-packed densities, molar volumes, the polarizability of the oxygen molar volume, the linear refractive index (n), third-order nonlinear susceptibility, (3) , and nonlinear index (n2) of produced glasses were evaluation. It was found that the linear refractive index decreases otherwise the optical energy gap increased with doped Er3+ ions in the glasses network. Also, the Vickers microhardness increase with increasing Er2O3 in the glass matrix. Hence, these glasses may be use in optical isolator with high third-order non-linear susceptibility.
{"title":"Magneto-optic and mechanical properties of TeO2 with K2TeO3 doped with rare earth","authors":"K. I. Hussein, R. A. Al-Qahtani, N. Alzedanie, S. Muhammad, M. Alqahtani, I. S. Asiri, M. Reben, E. Yousef","doi":"10.15251/jor.2023.191.105","DOIUrl":"https://doi.org/10.15251/jor.2023.191.105","url":null,"abstract":"The novel glasses within composition: 62TeO2-5K2TeO3-20ZnO-10Nb2O5-3PbF2 and 62TeO2-5K2TeO3-20ZnO-10Nb2O5-3PbF2-2Er2O3 in mol% were fabricated by using meltquenching technique. The magnetic properties Viz; Faraday effect and the Verdet constant at wavelength of laser beam (λ = 632 nm) were measured. The prepared sample with doped Er3+ has the highest value of Verdet constant (= 0.104min/G.cm) which depends on the polarizability of Er3+ ions. Moreover, the optical properties of present glass estimated by using UV-Vis-NIR spectroscopy. The oxygen-packed densities, molar volumes, the polarizability of the oxygen molar volume, the linear refractive index (n), third-order nonlinear susceptibility, (3) , and nonlinear index (n2) of produced glasses were evaluation. It was found that the linear refractive index decreases otherwise the optical energy gap increased with doped Er3+ ions in the glasses network. Also, the Vickers microhardness increase with increasing Er2O3 in the glass matrix. Hence, these glasses may be use in optical isolator with high third-order non-linear susceptibility.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46861284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/jor.2023.193.295
A. Benmakhlouf, R. Makhloufi, A. Boutarfaia, B. Messai, F. Hadji, M. Nouiri
In this study PZT type ceramics with a general formula Pb1- xBax(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 where (x = 0.00, 0.04, and 0.08) were elaborated by the solid-state reaction and studied for their structural and dielectric properties in the region of the morphotropic phase boundary (MPB). Different techniques were used to characterize the obtained samples such as X-ray diffraction (XRD) which shows that the results confirm the high purity of prepared samples without any secondary phase and also indicate the coexistence of both the tetragonal and rhombohedral phases. All the absorption bands corresponding to the perovskite structure are exhibited by The Fourier Transform Infrared spectroscopy (FTIR). The scanning electronic microscopy (SEM) shows that the mean grain size was found between 2,84 and 2,14 µm, the Curie temperature (TC) decreased with increasing Ba2+ content. Furthermore, the effect of the temperature, frequency, and composition on the dielectric properties demonstrated a maximum value of the dielectric constant ε max = 38800 at 1 kHz when X= 0.08.
{"title":"The effect of Barium substitution on the structural and dielectric properties of Pb1-XBaX(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 ceramics at the morphotropic phase boundary","authors":"A. Benmakhlouf, R. Makhloufi, A. Boutarfaia, B. Messai, F. Hadji, M. Nouiri","doi":"10.15251/jor.2023.193.295","DOIUrl":"https://doi.org/10.15251/jor.2023.193.295","url":null,"abstract":"In this study PZT type ceramics with a general formula Pb1- xBax(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 where (x = 0.00, 0.04, and 0.08) were elaborated by the solid-state reaction and studied for their structural and dielectric properties in the region of the morphotropic phase boundary (MPB). Different techniques were used to characterize the obtained samples such as X-ray diffraction (XRD) which shows that the results confirm the high purity of prepared samples without any secondary phase and also indicate the coexistence of both the tetragonal and rhombohedral phases. All the absorption bands corresponding to the perovskite structure are exhibited by The Fourier Transform Infrared spectroscopy (FTIR). The scanning electronic microscopy (SEM) shows that the mean grain size was found between 2,84 and 2,14 µm, the Curie temperature (TC) decreased with increasing Ba2+ content. Furthermore, the effect of the temperature, frequency, and composition on the dielectric properties demonstrated a maximum value of the dielectric constant ε max = 38800 at 1 kHz when X= 0.08.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67050022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This research presents a simulation study to achieve an optimized homojunction GaAs solar cell using SILVACO TCAD. A solar cell with configuration of p+ -AlGaAs as window, p-GaAs as emitter, n-GaAs as base and n+ -AlGaInP as BSF layer is proposed. The AlGaInP is selected as BSF layer due to high bandgap as compared to AlGaAs that is usually used in literature. Large scale of variation for doping concentration and thickness for all layers of cell have been simulated. The results show an improvement for solar cell parameters for the optimized cell as compared with the proposed one, where Jsc increases from 40.03 mA/cm2 to 52.58 mA/cm2 , Voc slightly increases from 0.94 V to 1 V, Pmax increases from 30.8 mW/cm2 to 46.86 mW/cm2 , FF increases from 82.19% to 88.54% and η increases from 22.29% to 33.94%. Which confirms the effectiveness of the doping concentration and thickness on solar cell performance.
{"title":"Superior efficiency for homojunction GaAs solar cell","authors":"A. Saif, M. Albishri, A. Mindil, M. Qaeed","doi":"10.15251/jor.2023.191.1","DOIUrl":"https://doi.org/10.15251/jor.2023.191.1","url":null,"abstract":"This research presents a simulation study to achieve an optimized homojunction GaAs solar cell using SILVACO TCAD. A solar cell with configuration of p+ -AlGaAs as window, p-GaAs as emitter, n-GaAs as base and n+ -AlGaInP as BSF layer is proposed. The AlGaInP is selected as BSF layer due to high bandgap as compared to AlGaAs that is usually used in literature. Large scale of variation for doping concentration and thickness for all layers of cell have been simulated. The results show an improvement for solar cell parameters for the optimized cell as compared with the proposed one, where Jsc increases from 40.03 mA/cm2 to 52.58 mA/cm2 , Voc slightly increases from 0.94 V to 1 V, Pmax increases from 30.8 mW/cm2 to 46.86 mW/cm2 , FF increases from 82.19% to 88.54% and η increases from 22.29% to 33.94%. Which confirms the effectiveness of the doping concentration and thickness on solar cell performance.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44962965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/jor.2023.191.15
H. K. Hassun, B. K. Al-Maiyaly, B. H. Hussein
This research including, CO3O4 was prepared by the chemical spry pyrolysis, deposited film acceptable to assess film properties and applications as photodetector devise, studying the optical and optoelectronics properties of Cobalt Oxide and effect of different doping ratios with Br (2, 5, 8)%. the optical energy gap for direct transition were evaluated and it decreases as the percentage Br increase, Hall measurements showed that all the films are p-type, the current–voltage characteristic of Br:CO3O4 /Si Heterojunction show change forward current at dark varies with applied voltage, high spectral response, specific detectivity and quantum efficiency of CO3O4 /Si detector with 8% of Br ,was deliberate, extreme value with 673nm.
{"title":"Manufacturing Br:CO3O4 /Si Heterojunction For Photodetector Applications","authors":"H. K. Hassun, B. K. Al-Maiyaly, B. H. Hussein","doi":"10.15251/jor.2023.191.15","DOIUrl":"https://doi.org/10.15251/jor.2023.191.15","url":null,"abstract":"This research including, CO3O4 was prepared by the chemical spry pyrolysis, deposited film acceptable to assess film properties and applications as photodetector devise, studying the optical and optoelectronics properties of Cobalt Oxide and effect of different doping ratios with Br (2, 5, 8)%. the optical energy gap for direct transition were evaluated and it decreases as the percentage Br increase, Hall measurements showed that all the films are p-type, the current–voltage characteristic of Br:CO3O4 /Si Heterojunction show change forward current at dark varies with applied voltage, high spectral response, specific detectivity and quantum efficiency of CO3O4 /Si detector with 8% of Br ,was deliberate, extreme value with 673nm.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46829703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/jor.2023.193.283
R. Jothiramalingam, T. Radika, H. Lohedan, M. Karnan, D. Al-Dhayan
Growing interest in the field of thermal energy conversion into useful electrical energy is the field of interest towards energy harvesting. Titania nanofluid prepared by low cost precursors using hydrothermal method. The physico chemical characterization of as prepared titania nanoparticle were characterized by XRD, Raman and UV-Visible spectrometric methods. The particle size measurement was determined via Zeta potential study. We have studied the miscibility and viscosity and sedimentation property of as prepared titanium dioxide nanofluid particles by low cost method in various mixed solvent medium. Nanofluids property with different concentration of TiO2 nanoparticles (0.01%, 0.02%, 0.04%, 0.05%, 0.1%, 0.2%, 0.5%) have been prepared by adding different concentrations and studied their physico-chemical properties. The as prepared TiO2 nanoparticles in the form fluid solution have shown very clear settled solution after the addition of suitable solvent medium and preparation method.
{"title":"Synthesis and characterization of TiO2 nano fluids formation and its optical, electrical and catalytic property analysis","authors":"R. Jothiramalingam, T. Radika, H. Lohedan, M. Karnan, D. Al-Dhayan","doi":"10.15251/jor.2023.193.283","DOIUrl":"https://doi.org/10.15251/jor.2023.193.283","url":null,"abstract":"Growing interest in the field of thermal energy conversion into useful electrical energy is the field of interest towards energy harvesting. Titania nanofluid prepared by low cost precursors using hydrothermal method. The physico chemical characterization of as prepared titania nanoparticle were characterized by XRD, Raman and UV-Visible spectrometric methods. The particle size measurement was determined via Zeta potential study. We have studied the miscibility and viscosity and sedimentation property of as prepared titanium dioxide nanofluid particles by low cost method in various mixed solvent medium. Nanofluids property with different concentration of TiO2 nanoparticles (0.01%, 0.02%, 0.04%, 0.05%, 0.1%, 0.2%, 0.5%) have been prepared by adding different concentrations and studied their physico-chemical properties. The as prepared TiO2 nanoparticles in the form fluid solution have shown very clear settled solution after the addition of suitable solvent medium and preparation method.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67048784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/jor.2023.191.65
H. Ali, N. Amin, M. Akhtar, M. Arshad, M. Athar, N. Morley, M. Yusaf, Z. Latif, K. Mehmood
The Nickel substituted Cu-Co-Zn-Ce nano ferrites, Zn0.15Co0.45Cu0.40-xNix Fe1.85Ce0.15O4 with x=0, 0.1, 0.20, 0.30, 0.40, were synthesized using the coprecipitation technique. The sample were sintered at 900 ℃ for 5h. The structural, electrical, dielectric and magnetic properties of all the prepared samples were characterized by XRD, SMU2401, UV-Vis and FTIR. The powder X-ray diffraction patterns of all the prepared samples confirmed the formation of single-phase cubic spinel structures. These samples further characterized for the electrical properties by using two-probe type method. The DC resistivity of all the ferrite composition decreased as the temperature increased, showing their semiconductor nature. UV-Vis and FTIR confirmed the substitution of nickel in Cu-Co-Zn-Ce ferrites. From UV-Vis it is observed that the optical band gap changes from 3.9 eV to 5.3 eV with addition of Ni. FTIR analysis revealed that a strong variation on tetrahedral absorption frequency band is present which is due to the replacement of Ni on Cu. All these results suggested that these materials can be used for wastewater treatment.
{"title":"Synthesis and characterizations of nickel doped Co-Zn-Y ferrites","authors":"H. Ali, N. Amin, M. Akhtar, M. Arshad, M. Athar, N. Morley, M. Yusaf, Z. Latif, K. Mehmood","doi":"10.15251/jor.2023.191.65","DOIUrl":"https://doi.org/10.15251/jor.2023.191.65","url":null,"abstract":"The Nickel substituted Cu-Co-Zn-Ce nano ferrites, Zn0.15Co0.45Cu0.40-xNix Fe1.85Ce0.15O4 with x=0, 0.1, 0.20, 0.30, 0.40, were synthesized using the coprecipitation technique. The sample were sintered at 900 ℃ for 5h. The structural, electrical, dielectric and magnetic properties of all the prepared samples were characterized by XRD, SMU2401, UV-Vis and FTIR. The powder X-ray diffraction patterns of all the prepared samples confirmed the formation of single-phase cubic spinel structures. These samples further characterized for the electrical properties by using two-probe type method. The DC resistivity of all the ferrite composition decreased as the temperature increased, showing their semiconductor nature. UV-Vis and FTIR confirmed the substitution of nickel in Cu-Co-Zn-Ce ferrites. From UV-Vis it is observed that the optical band gap changes from 3.9 eV to 5.3 eV with addition of Ni. FTIR analysis revealed that a strong variation on tetrahedral absorption frequency band is present which is due to the replacement of Ni on Cu. All these results suggested that these materials can be used for wastewater treatment.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43424458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/jor.2023.191.31
J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng
This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure
{"title":"Numerical simulation of SnS/CZTSSe heterojunction solar cells","authors":"J. Yuan, J. S. Wang, S. Q. Liu, H. Zhao, P. Wang, X. Deng","doi":"10.15251/jor.2023.191.31","DOIUrl":"https://doi.org/10.15251/jor.2023.191.31","url":null,"abstract":"This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49244617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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