Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317850
N. Mendez-Gomez, Orlando Bousono, Ricardo H. Castañeyra, E. I. Ortiz
The purpose of this study is to implement a photovoltaic power scheme driven by a single panel for a low-power three-phase induction motor drive system and be as cost efficient as possible. The induction motor represents an emergency water treatment device. Due to the PV output voltage (~70V) a Boost converter was chosen to step up the input voltage to the induction motor's rated voltage of 120V. The PVM was simulated using the exponential model. Its characterization and inherent traits were studied for design purposes. The Boost converter and a three-phase three-level inverter using 180° conduction were simulated and then implemented in the experimental setup. The inverter output results in three-phase voltages that lag by 120° between each other. A routine was implemented in the Atmega328 to achieve speed control if needed for the application. These results show a feasible topology for an emergency water treatment device and the development of a low cost system seems promising.
{"title":"Development of a low cost induction motor drive system using a PVM, boost converter and three","authors":"N. Mendez-Gomez, Orlando Bousono, Ricardo H. Castañeyra, E. I. Ortiz","doi":"10.1109/PVSC.2012.6317850","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317850","url":null,"abstract":"The purpose of this study is to implement a photovoltaic power scheme driven by a single panel for a low-power three-phase induction motor drive system and be as cost efficient as possible. The induction motor represents an emergency water treatment device. Due to the PV output voltage (~70V) a Boost converter was chosen to step up the input voltage to the induction motor's rated voltage of 120V. The PVM was simulated using the exponential model. Its characterization and inherent traits were studied for design purposes. The Boost converter and a three-phase three-level inverter using 180° conduction were simulated and then implemented in the experimental setup. The inverter output results in three-phase voltages that lag by 120° between each other. A routine was implemented in the Atmega328 to achieve speed control if needed for the application. These results show a feasible topology for an emergency water treatment device and the development of a low cost system seems promising.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"44 1","pages":"001348-001351"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84145034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317583
Cheng-Ying Yang, T. Chen, C. Chiang, Yi-Ying Liou, W. Tsai, P. Yu, Wen‐Hao Chang
We investigate the possibility to enhance the absorption in solar cells by employing localized plasmon polaritons excited in metallic nanostructure. one possible mechanism for increased absorption for the presence of the metallic nanostructure are the giant near-field enhancement. The localized near-field enhancement of electric field is near the surface of nanostructure within several ten nanometers. To observed the effect of localized surface Plasmon, the photoelectric conversion characteristics of a solar cell with metal nanostructure are investigated by using an illumination-collection mode scanning near-field optical microscopy and near-field optical beam induced current (NOBIC) technique.
{"title":"Direct near-field mapping of photoelectric response induced by localized surface plasmon of silver nano-islands on a silicon solar cell","authors":"Cheng-Ying Yang, T. Chen, C. Chiang, Yi-Ying Liou, W. Tsai, P. Yu, Wen‐Hao Chang","doi":"10.1109/PVSC.2012.6317583","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317583","url":null,"abstract":"We investigate the possibility to enhance the absorption in solar cells by employing localized plasmon polaritons excited in metallic nanostructure. one possible mechanism for increased absorption for the presence of the metallic nanostructure are the giant near-field enhancement. The localized near-field enhancement of electric field is near the surface of nanostructure within several ten nanometers. To observed the effect of localized surface Plasmon, the photoelectric conversion characteristics of a solar cell with metal nanostructure are investigated by using an illumination-collection mode scanning near-field optical microscopy and near-field optical beam induced current (NOBIC) technique.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"000125-000128"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84593082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317898
B. Hekmatshoar, D. Shahrjerdi, S. Bedell, D. Sadana
We demonstrate high-efficiency heterojunction (HJ) solar cells realized by epitaxial growth of thin layers of highly-doped Si on crystalline Si (c-Si) and crystalline Ge (c-Ge) substrates using plasma-enhanced chemical vapor deposition (PECVD) at temperatures as low as 150°C. We have achieved a conversion efficiency of 21.4% on p-type c-Si substrates textured by random pyramids and Al-doped zinc oxide (ZnO:Al) electrodes sputtered at room-temperature. To the best of our knowledge, this is the highest conversion efficiency reported for HJ solar cells on p-type c-Si substrates. We have achieved conversion efficiencies of 5.9% and 6.4% on n-type and p-type c-Ge substrates, respectively, which are comparable with efficiencies reported for conventional c-Ge cells requiring process temperatures up to 600°C.
{"title":"High-efficiency heterojunction solar cells on crystalline silicon and germanium substrates enabled by low-temperature epitaxial growth of silicon","authors":"B. Hekmatshoar, D. Shahrjerdi, S. Bedell, D. Sadana","doi":"10.1109/PVSC.2012.6317898","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317898","url":null,"abstract":"We demonstrate high-efficiency heterojunction (HJ) solar cells realized by epitaxial growth of thin layers of highly-doped Si on crystalline Si (c-Si) and crystalline Ge (c-Ge) substrates using plasma-enhanced chemical vapor deposition (PECVD) at temperatures as low as 150°C. We have achieved a conversion efficiency of 21.4% on p-type c-Si substrates textured by random pyramids and Al-doped zinc oxide (ZnO:Al) electrodes sputtered at room-temperature. To the best of our knowledge, this is the highest conversion efficiency reported for HJ solar cells on p-type c-Si substrates. We have achieved conversion efficiencies of 5.9% and 6.4% on n-type and p-type c-Ge substrates, respectively, which are comparable with efficiencies reported for conventional c-Ge cells requiring process temperatures up to 600°C.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"119 1","pages":"001590-001593"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78088016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317739
Sehyun Hwang, Jae‐Hyung Jang
A three-dimensional simulation study was carried out for the optimum design of subwavelength structures (SWSs) on a CuIn1-xGaxSe2 (CIGS) solar cell regarding the antireflection properties. Numerical calculations were implemented for various shapes of SWSs with conic, parabolic, quadratic cross-sectional profiles, along with diverse CIGS composition ratios of x=0.2, 0.4, and 0.75. The reflectance was obtained successfully for individual configuration sets with subsequent computations of the effective reflectance. The simulated reflectance was found to be strongly dependent on the aspect ratio of the SWS, whereas it was highly insensitive to the thickness of the ZnO layer. The effective reflectance drops to approximately 5% and below 2% when the aspect ratio is 1 and 2, respectively. The simulation result indicates that a cone-shaped SWS enhances the transmittance more effectively than parabolic and quadratic SWSs. The reflectance of the optimized SWS was also compared to that of a CIGS solar cell with conventional MgF2 antireflection coatings (ARCs). Multi-layer SWSs tend to be the most efficient surface structure with broadband and wide-angle antireflection.
{"title":"3D simulations for the optimization of antireflection subwavelength structures in CIGS solar cells","authors":"Sehyun Hwang, Jae‐Hyung Jang","doi":"10.1109/PVSC.2012.6317739","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317739","url":null,"abstract":"A three-dimensional simulation study was carried out for the optimum design of subwavelength structures (SWSs) on a CuIn1-xGaxSe2 (CIGS) solar cell regarding the antireflection properties. Numerical calculations were implemented for various shapes of SWSs with conic, parabolic, quadratic cross-sectional profiles, along with diverse CIGS composition ratios of x=0.2, 0.4, and 0.75. The reflectance was obtained successfully for individual configuration sets with subsequent computations of the effective reflectance. The simulated reflectance was found to be strongly dependent on the aspect ratio of the SWS, whereas it was highly insensitive to the thickness of the ZnO layer. The effective reflectance drops to approximately 5% and below 2% when the aspect ratio is 1 and 2, respectively. The simulation result indicates that a cone-shaped SWS enhances the transmittance more effectively than parabolic and quadratic SWSs. The reflectance of the optimized SWS was also compared to that of a CIGS solar cell with conventional MgF2 antireflection coatings (ARCs). Multi-layer SWSs tend to be the most efficient surface structure with broadband and wide-angle antireflection.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"115 1","pages":"000864-000867"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82583562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318106
D. Caselli, C. Ning
Laterally-arranged multiple bandgap (LAMB) solar cells based on InGaN nanowires or pillars with spatial composition-grading over a broad range over the surface of a single substrate were designed and simulated using Silvaco ATLAS software. The p-n junction is formed by n-type InGaN and a p-type GaP emitter, which is predicted to have a valence band well-aligned to In-rich InGaN based on a simple electron affinity band alignment model. Both three and six subcell designs were evaluated at various levels of solar concentration up to 240 suns. Efficiencies ranged from 32.9% to 40.2% for the three-subcell design and from 33.8% to 40.4% for the six-subcell design as the solar concentration was increased from one to 240 suns. A similar design utilizing a p-i-n structure rather than a simple p-n junction achieved 29.3% to 40.2% with three subcells and 36.1% to 46.2% with six subcells. The much greater benefit of increasing the number of subcells in the p-i-n design as compared to the p-n structure is attributed to more efficient carrier extraction, which enhances current-matching between subcells.
{"title":"Full-spectrum laterally-arranged multiple-bandgap InGaN solar cells","authors":"D. Caselli, C. Ning","doi":"10.1109/PVSC.2012.6318106","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318106","url":null,"abstract":"Laterally-arranged multiple bandgap (LAMB) solar cells based on InGaN nanowires or pillars with spatial composition-grading over a broad range over the surface of a single substrate were designed and simulated using Silvaco ATLAS software. The p-n junction is formed by n-type InGaN and a p-type GaP emitter, which is predicted to have a valence band well-aligned to In-rich InGaN based on a simple electron affinity band alignment model. Both three and six subcell designs were evaluated at various levels of solar concentration up to 240 suns. Efficiencies ranged from 32.9% to 40.2% for the three-subcell design and from 33.8% to 40.4% for the six-subcell design as the solar concentration was increased from one to 240 suns. A similar design utilizing a p-i-n structure rather than a simple p-n junction achieved 29.3% to 40.2% with three subcells and 36.1% to 46.2% with six subcells. The much greater benefit of increasing the number of subcells in the p-i-n design as compared to the p-n structure is attributed to more efficient carrier extraction, which enhances current-matching between subcells.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"12 1","pages":"002518-002520"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76300449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318000
I. García, J. Geisz, M. Steiner, J. Olson, D. Friedman, S. Kurtz
State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.
{"title":"Design of semiconductor-based back reflectors for high Voc monolithic multijunction solar cells","authors":"I. García, J. Geisz, M. Steiner, J. Olson, D. Friedman, S. Kurtz","doi":"10.1109/PVSC.2012.6318000","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318000","url":null,"abstract":"State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"78 1","pages":"002042-002047"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76040970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317775
Daming Chen, Zongcun Liang, Yang Yang, Hui Shen, Yang Liu
The research of this paper was focused on the simulation of screen printed Local Back Surface Field (LBSF) for the rear passivated solar cells. The thickness, homogeneity and cavity effect were studied. According to the simulation results, the thickness of LBSF should be at least 2 μm in order to gain high efficiency of solar cells. If LBSF was thick enough, the homogeneity of LBSF had less impact on the cell performance. However, the incomplete formation of LBSF layer would drastically decrease the open circuit voltage (Voc) of cells. The thinnest part of an inhomogeneous LBSF should be 1 to 2 μm at the least. As for the influence of the cavities inside the local contacts, a single long cavity would cause a power loss of 8.20% to 11.15% relatively, and the cavity group made up of many long cavities would cause a power loss of about 11.53% to100% relatively.
{"title":"Structure simulation of screen printed local back surface field for rear passivated silicon solar cells","authors":"Daming Chen, Zongcun Liang, Yang Yang, Hui Shen, Yang Liu","doi":"10.1109/PVSC.2012.6317775","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317775","url":null,"abstract":"The research of this paper was focused on the simulation of screen printed Local Back Surface Field (LBSF) for the rear passivated solar cells. The thickness, homogeneity and cavity effect were studied. According to the simulation results, the thickness of LBSF should be at least 2 μm in order to gain high efficiency of solar cells. If LBSF was thick enough, the homogeneity of LBSF had less impact on the cell performance. However, the incomplete formation of LBSF layer would drastically decrease the open circuit voltage (Voc) of cells. The thinnest part of an inhomogeneous LBSF should be 1 to 2 μm at the least. As for the influence of the cavities inside the local contacts, a single long cavity would cause a power loss of 8.20% to 11.15% relatively, and the cavity group made up of many long cavities would cause a power loss of about 11.53% to100% relatively.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"001018-001022"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76235491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317597
Wan-Yao Wu, Chia-Hsiang Chen, Chia-Hao Hsu, Shih-yuan Wei, Chien-Hsu Chen, Yun-chung Wu, T. Hong, H. Niu, C. Lai
In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.
{"title":"The effect of Na ion implantation on the polycrystalline CuIn1−xGaxSe2","authors":"Wan-Yao Wu, Chia-Hsiang Chen, Chia-Hao Hsu, Shih-yuan Wei, Chien-Hsu Chen, Yun-chung Wu, T. Hong, H. Niu, C. Lai","doi":"10.1109/PVSC.2012.6317597","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317597","url":null,"abstract":"In this work, Ion implantation was applied for quantitative and spatial control of Na distribution in CIGS films. Local Na-doped layer near the CIGS surface was observed in secondary ion mass spectroscopy (SIMS) depth-profile. Implantation-induced lattice displacement and recovery processes by rapid thermal annealing were characterized by Raman spectroscopy and grazing incident X-ray diffraction. Post annealing process and annealing during implantation both can reduce implantation-induced displacement well. In the preliminary work, Na-implanted CIGS film lead to an enhancement in electrical properties of device.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"99 1","pages":"000185-000187"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87886528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6317635
N. Podraza, D. B. St. John
High efficiency thin film silicon solar cells consist of multiple junctions with hydrogenated amorphous silicon, silicon germanium alloys, and nanocrystalline silicon (nc-Si:H) absorbers. Uniformity over large areas is challenging for nc-Si:H and an accurate method of mapping material quality via a technique like ex situ spectroscopic ellipsometry (SE) is desirable. In situ, real time SE (RTSE) measurements during growth show material evolves from amorphous to nanocrystalline, which complicates the analysis of single SE measurements. Information from RTSE has been applied to develop procedures to accurately extract the thickness at which nanocrystallites initially appear and coalesce from single SE measurements.
{"title":"Optical characterization of structurally graded Si1−xGex:H thin films","authors":"N. Podraza, D. B. St. John","doi":"10.1109/PVSC.2012.6317635","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317635","url":null,"abstract":"High efficiency thin film silicon solar cells consist of multiple junctions with hydrogenated amorphous silicon, silicon germanium alloys, and nanocrystalline silicon (nc-Si:H) absorbers. Uniformity over large areas is challenging for nc-Si:H and an accurate method of mapping material quality via a technique like ex situ spectroscopic ellipsometry (SE) is desirable. In situ, real time SE (RTSE) measurements during growth show material evolves from amorphous to nanocrystalline, which complicates the analysis of single SE measurements. Information from RTSE has been applied to develop procedures to accurately extract the thickness at which nanocrystallites initially appear and coalesce from single SE measurements.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"000354-000359"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86900612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-03DOI: 10.1109/PVSC.2012.6318199
E. Ortiz-Rivera
In this paper, a novel method is presented using fractional polynomials to approximate the performance for a PVM where the shape, boundary conditions and performance of the physical system are satisfied. The use of fractional polynomials will provide an analytical solution to determine the optimal voltage, Vop, optimal current, Iop, and maximum power, Pmax for the PVM operation. Also, this paper proposes a second method to approximate a fractional polynomial by a sufficiently close integer polynomial. Several examples are shown and verified using the manufacturer data sheets of different PVM's. Finally, the proposed methods are excellent to approximate the PVM's I-V Curves and provide a different way to approximate analytically the PVM's optimal voltage to produce the PVM's maximum power that it is not possible to solve using differential calculus.
{"title":"Approximation of a photovoltaic module model using fractional and integral polynomials","authors":"E. Ortiz-Rivera","doi":"10.1109/PVSC.2012.6318199","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318199","url":null,"abstract":"In this paper, a novel method is presented using fractional polynomials to approximate the performance for a PVM where the shape, boundary conditions and performance of the physical system are satisfied. The use of fractional polynomials will provide an analytical solution to determine the optimal voltage, Vop, optimal current, Iop, and maximum power, Pmax for the PVM operation. Also, this paper proposes a second method to approximate a fractional polynomial by a sufficiently close integer polynomial. Several examples are shown and verified using the manufacturer data sheets of different PVM's. Finally, the proposed methods are excellent to approximate the PVM's I-V Curves and provide a different way to approximate analytically the PVM's optimal voltage to produce the PVM's maximum power that it is not possible to solve using differential calculus.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002927-002931"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86440674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：