Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464761
V. Podhurska, B. Vasyliv
The changes of microstructure, strength, electrical conductivity and fracture micromechanisms of porous YSZ-Ni substrate as anode-supported solid oxide fuel cell (SOFC) material after the treatment in high temperature (600°C) reducing and oxidizing environments have been studied.
{"title":"Influence of NiO reduction on microstructure and properties of porous Ni-ZrO2 substrates","authors":"V. Podhurska, B. Vasyliv","doi":"10.1109/OMEE.2012.6464761","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464761","url":null,"abstract":"The changes of microstructure, strength, electrical conductivity and fracture micromechanisms of porous YSZ-Ni substrate as anode-supported solid oxide fuel cell (SOFC) material after the treatment in high temperature (600°C) reducing and oxidizing environments have been studied.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"24 1","pages":"293-294"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72652160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464818
V. Lutsyk
Alternative principle of the phase diagram (PD) engineering has been offered: 1) a space scheme of 3-phase regions is to be elaborated; 2) contours of the surfaces of unruled nature are to be closed and data of thermodynamic assessment are used on this stage; 3) surfaces should be approximated as the minimal ones (with the minimal area); 4) all geometrical elements are designated, and their “names” contain the meaning (reason) of these designations; 5) after the computer assembling the PD space model becomes a useful tool to solve different fundamental and applied tasks of materials science.
{"title":"3D model of T-x-y diagram as a tool of materials science","authors":"V. Lutsyk","doi":"10.1109/OMEE.2012.6464818","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464818","url":null,"abstract":"Alternative principle of the phase diagram (PD) engineering has been offered: 1) a space scheme of 3-phase regions is to be elaborated; 2) contours of the surfaces of unruled nature are to be closed and data of thermodynamic assessment are used on this stage; 3) surfaces should be approximated as the minimal ones (with the minimal area); 4) all geometrical elements are designated, and their “names” contain the meaning (reason) of these designations; 5) after the computer assembling the PD space model becomes a useful tool to solve different fundamental and applied tasks of materials science.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"30 1","pages":"131-132"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79316354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464737
V. Tryhuk, A. Ravinski, I. Makoed, V. Lazenka, K. Januszkiewicz
The Bi1−xGdxFeO3 (x = 0 − 0.2) ceramics were prepared by a solid-state reaction technique. Studies of magnetic and magnetoelectric properties were carried out. Due to the R3c → Pnma structural change, the spiral modulated spin structure collapses continuously with increasing Gd content and strongly enhances magnetization and magnetoelectric coefficient at x > 0.1. Studies of lattice dynamics of pure BiFeO3 were conducted ab-initio by means of density functional theory in order to shed light on ferroelectric instability.
{"title":"Magnetoelectric coupling and lattice dynamics of Gd-doped BiFeO3 multiferroics","authors":"V. Tryhuk, A. Ravinski, I. Makoed, V. Lazenka, K. Januszkiewicz","doi":"10.1109/OMEE.2012.6464737","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464737","url":null,"abstract":"The Bi<inf>1−x</inf>Gd<inf>x</inf>FeO<inf>3</inf> (x = 0 − 0.2) ceramics were prepared by a solid-state reaction technique. Studies of magnetic and magnetoelectric properties were carried out. Due to the R3c → Pnma structural change, the spiral modulated spin structure collapses continuously with increasing Gd content and strongly enhances magnetization and magnetoelectric coefficient at x > 0.1. Studies of lattice dynamics of pure BiFeO<inf>3</inf> were conducted ab-initio by means of density functional theory in order to shed light on ferroelectric instability.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"33 1","pages":"253-254"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81969899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464856
I. Ivashchenko, V. Halyan, I. V. Danylyuk, V. Z. Pankevuch, G. Davydyuk, I. Olekseyuk
The phase diagram of the Ga2Se3-In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 MΩ) was measured.
{"title":"Crystal growth of the (Ga1−xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals","authors":"I. Ivashchenko, V. Halyan, I. V. Danylyuk, V. Z. Pankevuch, G. Davydyuk, I. Olekseyuk","doi":"10.1109/OMEE.2012.6464856","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464856","url":null,"abstract":"The phase diagram of the Ga<inf>2</inf>Se<inf>3</inf>-In<inf>2</inf>Se<inf>3</inf> system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ<inf>2</inf> phase with the compositions (Ga<inf>0.6</inf>In<inf>0.4</inf>)<inf>2</inf>Se<inf>3</inf> and (Ga<inf>0.594</inf>In<inf>0.396</inf>Er<inf>0.01</inf>)<inf>2</inf>Se<inf>3</inf> were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga<inf>0.6</inf>In<inf>0.4</inf>)<inf>2</inf>Se<inf>3</inf> (R = 500 MΩ) and (Ga<inf>0.594</inf>In<inf>0.396</inf>Er<inf>0.01</inf>)<inf>2</inf>Se<inf>3</inf> (R = 210 MΩ) was measured.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"13 1","pages":"33-34"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79645633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464896
O. Chukova, S. Nedilko, V. Scherbatskii, S. Nedilko, T. Voytenko
Luminescence properties of the series of the La1−xEuxVO4 solid solutions were investigated. The samples were synthesized by the solid state and co-precipitation methods. Luminescence spectra of the investigated samples consist of weak wide non-structural band of the matrix emission and narrow spectral lines caused by inner f-f electron transitions in the impurity Eu3+ ions. Dependences of the structure, peak positions and intensity of luminescence on the composition, samples temperature and excitation wavelengths were studied. Differences between luminescence characteristics of series of samples obtained by two different methods are considered.
{"title":"Comparable luminescence investigation of the La1−xEuxVO4 solid solutions synthesized by two different methods","authors":"O. Chukova, S. Nedilko, V. Scherbatskii, S. Nedilko, T. Voytenko","doi":"10.1109/OMEE.2012.6464896","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464896","url":null,"abstract":"Luminescence properties of the series of the La1−xEuxVO4 solid solutions were investigated. The samples were synthesized by the solid state and co-precipitation methods. Luminescence spectra of the investigated samples consist of weak wide non-structural band of the matrix emission and narrow spectral lines caused by inner f-f electron transitions in the impurity Eu3+ ions. Dependences of the structure, peak positions and intensity of luminescence on the composition, samples temperature and excitation wavelengths were studied. Differences between luminescence characteristics of series of samples obtained by two different methods are considered.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"106 1","pages":"211-212"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84130278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464771
Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko
Electric and magnetoresistive properties of La0.6Sr0.2Mn1.2O3 films deposited on SrTiO3 (001) and LaAlO3 (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.
{"title":"Thickness-dependent magnetotransport properties of La0.6Sr0.2Mn1.2O3 films on SrTiO3 and LaAlO3 substrates","authors":"Alexandr Tovstolytkin, T. Polek, A. Matviyenko, M. Zakharenko, M. Semen'ko, A. Pashchenko","doi":"10.1109/OMEE.2012.6464771","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464771","url":null,"abstract":"Electric and magnetoresistive properties of La<inf>0.6S</inf>r<inf>0.2</inf>Mn<inf>1.2</inf>O<inf>3</inf> films deposited on SrTiO<inf>3</inf> (001) and LaAlO<inf>3</inf> (001) single crystalline substrates by magnetron sputtering have been studied. Characteristic features of the evolution of resistivity, magnetoresistance and Curie temperature upon the decrease of film thickness from 500 to 12.5 nm are specified. A key role of a thin strained layer adjacent to the substrate is demonstrated. The critical thicknesses of the strained layer are calculated for the films deposited on different substrates.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"31 1","pages":"270-271"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81815737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464748
V. Adamiv, Y. Burak, I.S. Say, I. Teslyuk, B. Turko, M. Panasyuk
The results of investigations of pulse X-ray conductivity for metal-dielectric-metal and metal-dielectric-semiconductor-metal structures, where thin plates of Li2B4O7 or Li6GdB3O9 single crystals, and Li2B4O7 glasses used as dielectrics, have been presented.
{"title":"Pulse X-ray conductivity of MDM and MDSCM structures on basis of lithium borates","authors":"V. Adamiv, Y. Burak, I.S. Say, I. Teslyuk, B. Turko, M. Panasyuk","doi":"10.1109/OMEE.2012.6464748","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464748","url":null,"abstract":"The results of investigations of pulse X-ray conductivity for metal-dielectric-metal and metal-dielectric-semiconductor-metal structures, where thin plates of Li<inf>2</inf>B<inf>4</inf>O<inf>7</inf> or Li<inf>6</inf>GdB<inf>3</inf>O<inf>9</inf> single crystals, and Li<inf>2</inf>B<inf>4</inf>O<inf>7</inf> glasses used as dielectrics, have been presented.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"795 1","pages":"227-228"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78869564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464736
Y. Gorobets, V. Kulish
Spin waves in a periodically layered ferromagnetic nanotube (nanotube magnetophotonic crystal) are investigated. An external magnetic field is considered to be applied parallel to the nanotube symmetry axis. A linearized Landau-Lifshitz equation in the magnetostatic approximation is used with taking account of the magnetic dipole-dipole interaction, the exchange interaction and the anisotropy effects. As a result, the local dispersion relation (for uniform nanotube sections), the radial wave number spectrum and the longitudinal quasi-wave number spectrum (for the entire nanotube) are found for spin waves in the above-described nanotube. Limitations on the transverse-angular modes are determined from the radial wave number spectrum. The longitudinal quasi-wave number spectrum in the “effective medium” limit is shown to have the same form as for a uniform nanotube (with averaged parameters).
{"title":"Dipole-exchange spin waves in a periodically layered ferromagnetic nanotube","authors":"Y. Gorobets, V. Kulish","doi":"10.1109/OMEE.2012.6464736","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464736","url":null,"abstract":"Spin waves in a periodically layered ferromagnetic nanotube (nanotube magnetophotonic crystal) are investigated. An external magnetic field is considered to be applied parallel to the nanotube symmetry axis. A linearized Landau-Lifshitz equation in the magnetostatic approximation is used with taking account of the magnetic dipole-dipole interaction, the exchange interaction and the anisotropy effects. As a result, the local dispersion relation (for uniform nanotube sections), the radial wave number spectrum and the longitudinal quasi-wave number spectrum (for the entire nanotube) are found for spin waves in the above-described nanotube. Limitations on the transverse-angular modes are determined from the radial wave number spectrum. The longitudinal quasi-wave number spectrum in the “effective medium” limit is shown to have the same form as for a uniform nanotube (with averaged parameters).","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"12 1","pages":"255-256"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89047818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464877
A. Popov, V. Yatsyna, M. Kopylovsky, I. Pritula, V. Gayvoronsky
Second harmonic generation efficiency enhancement in KDP single crystals with embedded anatase nanoparticles was accomplished in comparison with nominally pure KDP crystal. The enhancement effect occurs due the self-focusing of laser pump pulses.
{"title":"Impact of self-action effects on second harmonic generation efficiency in KDP crystals with embedded anatase nanoparticles","authors":"A. Popov, V. Yatsyna, M. Kopylovsky, I. Pritula, V. Gayvoronsky","doi":"10.1109/OMEE.2012.6464877","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464877","url":null,"abstract":"Second harmonic generation efficiency enhancement in KDP single crystals with embedded anatase nanoparticles was accomplished in comparison with nominally pure KDP crystal. The enhancement effect occurs due the self-focusing of laser pump pulses.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"7 1","pages":"203-203"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77684646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464883
Y. Suhak, K. Izdebska, P. Skupiński, A. Reszka, P. Sybilski, B. Kowalski, A. Mycielski, M. Soszko, A. Suchocki
This paper presents experimental results of implementation of ZnO single crystals as photoanodes in photoelectrochemical (PEC) cells for hydrogen generation from water splitting. Both, as-grown and annealed in oxidizing atmosphere ZnO single crystals were investigated. It was found that as-grown ZnO single crystals possess much higher conversion efficiencies than annealed in O2. The photocurrent density was found to increase significantly with the increase of external bias applied and excitation light intensity.
{"title":"Hydrogen generation by light-induced water splitting using ZnO single crystals","authors":"Y. Suhak, K. Izdebska, P. Skupiński, A. Reszka, P. Sybilski, B. Kowalski, A. Mycielski, M. Soszko, A. Suchocki","doi":"10.1109/OMEE.2012.6464883","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464883","url":null,"abstract":"This paper presents experimental results of implementation of ZnO single crystals as photoanodes in photoelectrochemical (PEC) cells for hydrogen generation from water splitting. Both, as-grown and annealed in oxidizing atmosphere ZnO single crystals were investigated. It was found that as-grown ZnO single crystals possess much higher conversion efficiencies than annealed in O2. The photocurrent density was found to increase significantly with the increase of external bias applied and excitation light intensity.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"51 1","pages":"189-189"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88317806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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