Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464809
V. Gritsyna, Y. Kazarinov, A. Moskvitin
The investigations of radio-luminescence (RL) in magnesium aluminates spinel crystals at variation of the time, intensity of X-irradiation and temperature of sample were provided. There were registered three prominent RL bands related to electron-hole recombination process at anti-site defects, emission of Mn2+-ions and emission of Cr3+-ions. The kinetics of the growth of indicated RL emissions show the competing processes of the capture of free charge carriers generated at irradiation by intrinsic defects and impurity ions.
{"title":"Radio-luminescence of defects and impurity ions in magnesium aluminates spinel","authors":"V. Gritsyna, Y. Kazarinov, A. Moskvitin","doi":"10.1109/OMEE.2012.6464809","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464809","url":null,"abstract":"The investigations of radio-luminescence (RL) in magnesium aluminates spinel crystals at variation of the time, intensity of X-irradiation and temperature of sample were provided. There were registered three prominent RL bands related to electron-hole recombination process at anti-site defects, emission of Mn2+-ions and emission of Cr3+-ions. The kinetics of the growth of indicated RL emissions show the competing processes of the capture of free charge carriers generated at irradiation by intrinsic defects and impurity ions.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"40 1","pages":"153-154"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88454191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464846
I. Hadzaman, H. Klym, O. Shpotyuk, M. Brunner, V. Balitska
Mixed Ni-Co-Cu oxymanganospinels of Cu0.1Ni0.8Co0.2Mn1.9O4 chemical composition are first developed for possible application as high-precise NTC thermistors using nanophase segregation effects controlled by sintering technological route. It is shown that rack-salt NiO phase in these ceramics occurs a decisive role on parasitic degradation caused by thermal storage of the ceramics at the elevated temperatures.
{"title":"Sintering-modified oxymanganospinel ceramics for NTC thermistor application","authors":"I. Hadzaman, H. Klym, O. Shpotyuk, M. Brunner, V. Balitska","doi":"10.1109/OMEE.2012.6464846","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464846","url":null,"abstract":"Mixed Ni-Co-Cu oxymanganospinels of Cu<inf>0.1</inf>Ni<inf>0.8</inf>Co<inf>0.2</inf>Mn<inf>1.9</inf>O<inf>4</inf> chemical composition are first developed for possible application as high-precise NTC thermistors using nanophase segregation effects controlled by sintering technological route. It is shown that rack-salt NiO phase in these ceramics occurs a decisive role on parasitic degradation caused by thermal storage of the ceramics at the elevated temperatures.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"410 1","pages":"53-54"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77126080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464845
V. Sokol, V. Shulgov
The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.
{"title":"Electrochemical aluminium oxide technology for production of electronics","authors":"V. Sokol, V. Shulgov","doi":"10.1109/OMEE.2012.6464845","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464845","url":null,"abstract":"The paper reviews the results of application of porous alumina formed using the electrochemical anodization process. Porous alumina is widely used in the microelectronics as a) anodized aluminum bases, b)systems of multilevel interconnections, c) aluminum packages for VLSIs and hybrid integrated circuits, d) thin-film temperature sensors, e) Al-based heating elements etc. Parameters of the structures with porous anodic alumina are summarized depending on the anodizing conditions.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"375 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75150219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464802
S. Mustafaeva, M. Asadov, A. Ismailov
The real (ε′) and imaginary (ε″) parts of complex dielectric permittivity and ac-conductivity (σac) across the layers of TlGaS2 single crystal have been measured in the frequency range f = 5 × 104 − 3.5 × 107 Hz before and after gamma irradiation with doses Dγ from 5 × 104 to 2.15 × 106 rad. It was shown that the accumulation of radiation dose in TlGaS2 single crystal leads to tangible increase in ε″ and to increase of ε″ dispersion. The main parameters of localized states in TlGaS2 single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.
{"title":"Effect of gamma irradiation on the dielectric properties of the TlGaS2 single crystal","authors":"S. Mustafaeva, M. Asadov, A. Ismailov","doi":"10.1109/OMEE.2012.6464802","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464802","url":null,"abstract":"The real (ε′) and imaginary (ε″) parts of complex dielectric permittivity and ac-conductivity (σ<inf>ac</inf>) across the layers of TlGaS<inf>2</inf> single crystal have been measured in the frequency range f = 5 × 10<sup>4</sup> − 3.5 × 10<sup>7</sup> Hz before and after gamma irradiation with doses D<inf>γ</inf> from 5 × 10<sup>4</sup> to 2.15 × 10<sup>6</sup> rad. It was shown that the accumulation of radiation dose in TlGaS<inf>2</inf> single crystal leads to tangible increase in ε″ and to increase of ε″ dispersion. The main parameters of localized states in TlGaS<inf>2</inf> single crystal before and after gamma irradiation were evaluated from high- frequency dielectric measurements.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"167-168"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76975434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464825
Y. Zhydachevskii, A. Suchocki, L. Lipińska, M. Baran
The work describes experimental results on Bi3+ luminescence in yttrium oxide (YO) and yttrium-aluminum oxides namely Y3Al5O12 (YAG), YAlO3 (YAP) and Y4Al2O9 (YAM) in the form of nanopowders synthesized by sol-gel method.
{"title":"Luminescence of Bi3+ ions in yttrium and yttrium-aluminum oxides","authors":"Y. Zhydachevskii, A. Suchocki, L. Lipińska, M. Baran","doi":"10.1109/OMEE.2012.6464825","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464825","url":null,"abstract":"The work describes experimental results on Bi<sup>3+</sup> luminescence in yttrium oxide (YO) and yttrium-aluminum oxides namely Y<inf>3</inf>Al<inf>5</inf>O<inf>12</inf> (YAG), YAlO<inf>3</inf> (YAP) and Y<inf>4</inf>Al<inf>2</inf>O<inf>9</inf> (YAM) in the form of nanopowders synthesized by sol-gel method.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"71 1","pages":"213-214"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77251240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464790
A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko
A non-destructive method for the technological control of the structure defects in SiO2 + Si wafers by measuring the internal friction background difference on the nearby harmonics f1 and f2 after mechanical and heat treatments.
{"title":"Inelastic-elastic properties of SiO2, SiO2 + TiO2 + ZrO2","authors":"A. Onanko, M. Kulish, O. Lyashenko, G. Prodayvoda, S. Vyzhva, Y. Onanko","doi":"10.1109/OMEE.2012.6464790","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464790","url":null,"abstract":"A non-destructive method for the technological control of the structure defects in SiO<inf>2</inf> + Si wafers by measuring the internal friction background difference on the nearby harmonics f<inf>1</inf> and f<inf>2</inf> after mechanical and heat treatments.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"45 1","pages":"81-82"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74628191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464742
Y. Zhydachevskii, A. Suchocki, M. Berkowski
The work is devoted to synthesis of Mn-doped YAlO3 (YAP) ceramics by common solid-state reaction and their characterization by photoluminescence and thermoluminescence techniques. An impact of the synthesis conditions on the thermoluminescence (TL) efficiency of the ceramics is analyzed from the point of view of possible application of the material for TL dosimetry of ionizing radiation.
{"title":"Thermoluminescent properties of Mn-doped YAP ceramics","authors":"Y. Zhydachevskii, A. Suchocki, M. Berkowski","doi":"10.1109/OMEE.2012.6464742","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464742","url":null,"abstract":"The work is devoted to synthesis of Mn-doped YAlO3 (YAP) ceramics by common solid-state reaction and their characterization by photoluminescence and thermoluminescence techniques. An impact of the synthesis conditions on the thermoluminescence (TL) efficiency of the ceramics is analyzed from the point of view of possible application of the material for TL dosimetry of ionizing radiation.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"121 1","pages":"241-242"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76325510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464854
G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra
We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10−3 Ωcm. The UV OLED device turns on at the applied voltage of 9 V.
{"title":"ZnMgO:Al Anode layer for organic light emitting diode based on carbazole derivative","authors":"G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra","doi":"10.1109/OMEE.2012.6464854","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464854","url":null,"abstract":"We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10−3 Ωcm. The UV OLED device turns on at the applied voltage of 9 V.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"26 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82628321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464746
A. Barabash, P. Belli, R. Bernabei, R. Boiko, V. Brudanin, F. Cappella, V. Caracciolo, R. Cerulli, D. Chernyak, F. Danevich, S. D'angelo, V. Degoda, M. L. di Vacri, A. E. Dossovitskiy, E. Galashov, A. Incicchitti, V. Kobychev, S. Konovalov, G. Kovtun, M. Laubenstein, A. Mikhlin, V. Mokina, A. S. Nikolaǐko, S. Nisi, D. Poda, R. Podviyanuk, O. Polischuk, A. P. Shcherban, V. Shlegel, D. A. Solopikhin, V. Tretyak, V. Umatov, Y. Vasiliev, V. D. Virich
Cadmium tungstate crystal scintillators enriched in 106Cd (106CdWO4) and 116Cd (116CdWO4) have been developed to search for 2β-decay of 106Cd and 116Cd.
{"title":"Development of CdWO4 crystal scintillators from enriched isotopes for 2γ-decay experiments","authors":"A. Barabash, P. Belli, R. Bernabei, R. Boiko, V. Brudanin, F. Cappella, V. Caracciolo, R. Cerulli, D. Chernyak, F. Danevich, S. D'angelo, V. Degoda, M. L. di Vacri, A. E. Dossovitskiy, E. Galashov, A. Incicchitti, V. Kobychev, S. Konovalov, G. Kovtun, M. Laubenstein, A. Mikhlin, V. Mokina, A. S. Nikolaǐko, S. Nisi, D. Poda, R. Podviyanuk, O. Polischuk, A. P. Shcherban, V. Shlegel, D. A. Solopikhin, V. Tretyak, V. Umatov, Y. Vasiliev, V. D. Virich","doi":"10.1109/OMEE.2012.6464746","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464746","url":null,"abstract":"Cadmium tungstate crystal scintillators enriched in <sup>106</sup>Cd (<sup>106</sup>CdWO<inf>4</inf>) and <sup>116</sup>Cd (<sup>116</sup>CdWO<inf>4</inf>) have been developed to search for 2β-decay of <sup>106</sup>Cd and <sup>116</sup>Cd.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"21 1","pages":"233-234"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87868867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-01DOI: 10.1109/OMEE.2012.6464798
D. Sergeyev
In this article we consider the modulation of the plasma frequency switching current-phase dependence of Josephson systems based on the CuO2 harmonic mode into the anharmonic one. It is established the increase of the plasma frequency in the cuprate high-temperature superconductors arising due to deviation of dependence current-phase between the oxide planes in high-temperature superconductors from the standard sine wave form.
{"title":"Modulation of the plasma frequency in cuprate superconductors with of the active CuO2 planes","authors":"D. Sergeyev","doi":"10.1109/OMEE.2012.6464798","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464798","url":null,"abstract":"In this article we consider the modulation of the plasma frequency switching current-phase dependence of Josephson systems based on the CuO2 harmonic mode into the anharmonic one. It is established the increase of the plasma frequency in the cuprate high-temperature superconductors arising due to deviation of dependence current-phase between the oxide planes in high-temperature superconductors from the standard sine wave form.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"78 1","pages":"179-180"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83515878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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