Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744167
Chuan Chang, Chia-Hao Hsu, W. Ho, Shih-yuan Wei, Yue-Shun Su, C. Lai
In this work, selenium treatment at 250-350°C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current-blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350°C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.
{"title":"Selenium treatment on the polycrystalline CuIn1−xGaxSe2 thin films sputtered from a quaternary target","authors":"Chuan Chang, Chia-Hao Hsu, W. Ho, Shih-yuan Wei, Yue-Shun Su, C. Lai","doi":"10.1109/PVSC.2013.6744167","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744167","url":null,"abstract":"In this work, selenium treatment at 250-350°C on the polycrystalline CuIn1-xGaxSe2 (CIGS) thin films sputtered from a quaternary target has been investigated in order to passivate anionic defects which induce the current-blocking behavior and lowering open circuit voltage. The CIGS thin films were selenized in a closed-space graphite container. The result of selenization was characterized by Raman spectroscopy, EQE and the current-voltage-temperature measurement. After selenization at 350°C, the current-blocking behavior is inhibited and Voc increases from 310mV to 640mV. Until now, the efficiency near 9% can be obtained by an optimized selenization process.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"47 7 1","pages":"0362-0364"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76677209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745194
Shinsuke Nagino, Hiroyuki Suzuki, Shigehiro Ueno
Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.
{"title":"Substrate-type Cu(In, Ga)Se2 solar cells with all layers deposited by non-vacuum solution-based methods","authors":"Shinsuke Nagino, Hiroyuki Suzuki, Shigehiro Ueno","doi":"10.1109/PVSC.2013.6745194","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745194","url":null,"abstract":"Cu(In, Ga)Se2 (CIGS) solar cells with all layers deposited using solution-based methods were demonstrated in order to investigate the utilization of wet process in CIGS photovoltaic cell fabrication. An active area efficiency of 7.7% was obtained. On the other hand, the highest efficiency of the cells with solution-processed CIGS and CdS layers was 15.3 %, which was about twice higher than that of all wet-coated cells. It was revealed that the quality of the ZnO nanoparticle layer, a lack of Na in the CIGS layer and the sheet resistance of SnO2:F back electrode limited the cell performance.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"130 1","pages":"3475-3479"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76745802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744432
W. Yibo, X. Honghua
Small-hydro power station is often used in remote area beside a river, but it doesn't match electricity demand so well, especially in dry season. A photovoltaic (PV) system with battery is a suitable option to complement the electricity gap. In this paper, a new structure of MW-class PV system integrating battery at DC-bus is proposed to be used in hydro/PV hybrid power system, and 4 main designing considerations and several key equipments are discussed. In 2011, a 2MWp PV station with the proposed structure was built up in Yushu, China. From stability analysis, the station shows a strong stability under load cut-in/off and solar irradiance's fluctuation.
{"title":"Research and practice of designing hydro/photovoltaic hybrid power system in microgrid","authors":"W. Yibo, X. Honghua","doi":"10.1109/PVSC.2013.6744432","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744432","url":null,"abstract":"Small-hydro power station is often used in remote area beside a river, but it doesn't match electricity demand so well, especially in dry season. A photovoltaic (PV) system with battery is a suitable option to complement the electricity gap. In this paper, a new structure of MW-class PV system integrating battery at DC-bus is proposed to be used in hydro/PV hybrid power system, and 4 main designing considerations and several key equipments are discussed. In 2011, a 2MWp PV station with the proposed structure was built up in Yushu, China. From stability analysis, the station shows a strong stability under load cut-in/off and solar irradiance's fluctuation.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"83 1","pages":"1509-1514"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76766161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744438
P. Burton, B. King
Effective evaluation and prediction of photovoltaic performance loss due to soiling requires consistent test methods. Natural grime accumulation is time-consuming and location-specific, and thus does not provide reproducible results across different geographic regions. Therefore, we have demonstrated a technique to apply artificial soiling with NIST-traceable components using an aerosol spray technique. This approach produces consistent soil coatings which were directly correlated to performance loss of multicrystalline Si cells in a laboratory setting. By tailoring the composition of the test blend, termed `standard grime', the loss due to soiling can be effectively predicted over a range of mass loadings and soil types.
{"title":"Artificial soiling of photovoltaic module surfaces using traceable soil components","authors":"P. Burton, B. King","doi":"10.1109/PVSC.2013.6744438","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744438","url":null,"abstract":"Effective evaluation and prediction of photovoltaic performance loss due to soiling requires consistent test methods. Natural grime accumulation is time-consuming and location-specific, and thus does not provide reproducible results across different geographic regions. Therefore, we have demonstrated a technique to apply artificial soiling with NIST-traceable components using an aerosol spray technique. This approach produces consistent soil coatings which were directly correlated to performance loss of multicrystalline Si cells in a laboratory setting. By tailoring the composition of the test blend, termed `standard grime', the loss due to soiling can be effectively predicted over a range of mass loadings and soil types.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"547 1","pages":"1542-1545"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77072313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745069
Dipankar Debnath, K. Chatterjee
The existing standalone systems that are used to feed power from solar photovoltaic (PV) array to off-grid loads require several stages of power conversion thereby reducing its reliability and efficiency. One of the solutions offered in the literature to overcome this limitation is to design the system for higher PV and/or battery voltage levels. However, increment in the PV/battery voltage level makes design and installation issues of the system more involved in order to satisfy concerns pertaining to the safety of the personnel and equipment. In order to address the aforementioned limitations of the existing standalone PV systems, a topology involving a novel boost inverter which does not require the increment in the voltage levels of PV array and/or battery is proposed in this paper. Detailed analytical studies of the system are carried out. The efficacy of the proposed scheme is verified by means of detailed simulation studies.
{"title":"A buck-boost integrated full bridge inverter for solar photovoltaic based standalone system","authors":"Dipankar Debnath, K. Chatterjee","doi":"10.1109/PVSC.2013.6745069","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745069","url":null,"abstract":"The existing standalone systems that are used to feed power from solar photovoltaic (PV) array to off-grid loads require several stages of power conversion thereby reducing its reliability and efficiency. One of the solutions offered in the literature to overcome this limitation is to design the system for higher PV and/or battery voltage levels. However, increment in the PV/battery voltage level makes design and installation issues of the system more involved in order to satisfy concerns pertaining to the safety of the personnel and equipment. In order to address the aforementioned limitations of the existing standalone PV systems, a topology involving a novel boost inverter which does not require the increment in the voltage levels of PV array and/or battery is proposed in this paper. Detailed analytical studies of the system are carried out. The efficacy of the proposed scheme is verified by means of detailed simulation studies.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"26 1","pages":"2867-2872"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82479061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744972
Mohammad Maksudur Rahman, M. Igarashi, Weiguo Hu, M. E. Syazwan, Y. Hoshi, N. Usami, S. Samukawa
A Quantum Dot Superlattice (QDSL) offers high prospect for new generation photovoltaics. We fabricated and characterized a 3-dimensional array of Si-NDs as a QDSL with a high-aspect ratio, clear interface, and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes for high-efficiency solar cells. Conductive atomic force microscopy measurements revealed that the conductivity became higher as the arrangement was changed from single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e. the coupling of wave functions was changed. Moreover, we measured the contribution of 3D Si-NDs array in producing photocurrent inside a quantum dot solar cell and also observed a higher photo absorption of sunlight by 3D Si-NDs (30%) than by a 2D array of Si-NDs (10%).
{"title":"High photo-current generation in a three-dimensional silicon quantum dot superlattice fabricated by combination of bio-template and neutral beam etching for quantum dot solar cell","authors":"Mohammad Maksudur Rahman, M. Igarashi, Weiguo Hu, M. E. Syazwan, Y. Hoshi, N. Usami, S. Samukawa","doi":"10.1109/PVSC.2013.6744972","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744972","url":null,"abstract":"A Quantum Dot Superlattice (QDSL) offers high prospect for new generation photovoltaics. We fabricated and characterized a 3-dimensional array of Si-NDs as a QDSL with a high-aspect ratio, clear interface, and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes for high-efficiency solar cells. Conductive atomic force microscopy measurements revealed that the conductivity became higher as the arrangement was changed from single Si-ND to 2D and 3D arrays with the same matrix of SiC, i.e. the coupling of wave functions was changed. Moreover, we measured the contribution of 3D Si-NDs array in producing photocurrent inside a quantum dot solar cell and also observed a higher photo absorption of sunlight by 3D Si-NDs (30%) than by a 2D array of Si-NDs (10%).","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"13 1","pages":"2456-2458"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81342048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744128
Xixiang Xu, Jinyan Zhang, Chongyan Lian, A. Hu, X. Ru, Cao Yu, C. Peng, M. Qu, Xinghong Zhou, Jianqiang Wang, Xiaohua Xu, F. Lin, Xiaodang Zhang, Ying Zhao, Yinchun Zhang, Hongqing Shan, Yuanmin Li
Though thin film silicon has evolved into an important technology for photovoltaic industry, further increasing its conversion efficiency remains to be a key task. In this work, we report the progress we have made in developing compatible nanocrystalline Si (nc-Si) technology with our existing amorphous silicon germanium (a-SiGe) based multi-junction solar cell manufacturing lines. We have conducted experiments mainly on two types of nc-Si based solar cell structures, a-Si/a-SiGe/nc-Si triple-junction and a-Si/nc-Si double-junction device. Currently we are attaining initial total area efficiency of 10.7% and 12.4% for the triple- and double-junction structures, respectively, on substrate size of 0.79 m2 (1.245 m × 0.635 m). Experimental results including study of crystalline volume fraction along nc-Si growth, individual component cell optimization and current match, development of superior tunnel-junction and contact layers are presented.
虽然薄膜硅已经发展成为光伏产业的重要技术，但进一步提高其转换效率仍然是一个关键的任务。在这项工作中，我们报告了我们在开发兼容纳米晶硅(nc-Si)技术与我们现有的基于非晶硅锗(a-SiGe)的多结太阳能电池生产线方面所取得的进展。我们主要对两种基于nc-Si的太阳能电池结构进行了实验，a-Si/a-SiGe/nc-Si三结器件和a-Si/nc-Si双结器件。目前，我们在0.79 m2 (1.245 m × 0.635 m)的衬底上获得了三结和双结结构的初始总面积效率分别为10.7%和12.4%。实验结果包括nc-Si生长过程中晶体体积分数的研究，单个组件电池优化和电流匹配，优越隧道结和接触层的开发。
{"title":"Development of amorphous silicon-germanium and nanocrystalline silicon based multi-junction solar cell technology for GW-scale manufacturing","authors":"Xixiang Xu, Jinyan Zhang, Chongyan Lian, A. Hu, X. Ru, Cao Yu, C. Peng, M. Qu, Xinghong Zhou, Jianqiang Wang, Xiaohua Xu, F. Lin, Xiaodang Zhang, Ying Zhao, Yinchun Zhang, Hongqing Shan, Yuanmin Li","doi":"10.1109/PVSC.2013.6744128","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744128","url":null,"abstract":"Though thin film silicon has evolved into an important technology for photovoltaic industry, further increasing its conversion efficiency remains to be a key task. In this work, we report the progress we have made in developing compatible nanocrystalline Si (nc-Si) technology with our existing amorphous silicon germanium (a-SiGe) based multi-junction solar cell manufacturing lines. We have conducted experiments mainly on two types of nc-Si based solar cell structures, a-Si/a-SiGe/nc-Si triple-junction and a-Si/nc-Si double-junction device. Currently we are attaining initial total area efficiency of 10.7% and 12.4% for the triple- and double-junction structures, respectively, on substrate size of 0.79 m2 (1.245 m × 0.635 m). Experimental results including study of crystalline volume fraction along nc-Si growth, individual component cell optimization and current match, development of superior tunnel-junction and contact layers are presented.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"0191-0194"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81384708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745094
M. Gostein, B. Littmann, J. Caron, L. Dunn
The accumulation of dust and other environmental contaminants on PV modules, also known as PV module soiling, is a significant source of lost potential power generation for PV installations. Designers and operators of utility-scale solar power plants are increasingly seeking methods to quantify soiling-related losses, in order to improve performance modeling and verification or to optimize washing schedules. Recently, soiling measurement equipment has been introduced based on the measurement of two co-planar PV modules, one of which is regularly cleaned, and the other of which naturally accumulates environmental contaminants. These measurements are used to determine a soiling ratio (SR), which may be applied as a derate factor in analysis of the PV system performance. In this work, we examine the difference between a soiling ratio metric calculated from measured temperature-corrected short-circuit current values (SRIsc), which represents the fraction of irradiance reaching the soiled modules, versus a soiling ratio calculated from measured temperature-corrected PV module maximum power values (SRPmax), which represents the fraction of power produced by the soiled modules compared to clean modules. We examine both techniques for CdTe and c-Si module technologies. This study is motivated by the fact that variations in module efficiency versus irradiance, as well as any non-uniformity of soiling, may introduce differences between the power losses estimated from short-circuit current values versus actual soiling-induced power losses. For CdTe, the SRIsc method is found to be a good proxy for the SRPmax method for nonuniform soiling levels up to 11%.
{"title":"Comparing PV power plant soiling measurements extracted from PV module irradiance and power measurements","authors":"M. Gostein, B. Littmann, J. Caron, L. Dunn","doi":"10.1109/PVSC.2013.6745094","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745094","url":null,"abstract":"The accumulation of dust and other environmental contaminants on PV modules, also known as PV module soiling, is a significant source of lost potential power generation for PV installations. Designers and operators of utility-scale solar power plants are increasingly seeking methods to quantify soiling-related losses, in order to improve performance modeling and verification or to optimize washing schedules. Recently, soiling measurement equipment has been introduced based on the measurement of two co-planar PV modules, one of which is regularly cleaned, and the other of which naturally accumulates environmental contaminants. These measurements are used to determine a soiling ratio (SR), which may be applied as a derate factor in analysis of the PV system performance. In this work, we examine the difference between a soiling ratio metric calculated from measured temperature-corrected short-circuit current values (SRIsc), which represents the fraction of irradiance reaching the soiled modules, versus a soiling ratio calculated from measured temperature-corrected PV module maximum power values (SRPmax), which represents the fraction of power produced by the soiled modules compared to clean modules. We examine both techniques for CdTe and c-Si module technologies. This study is motivated by the fact that variations in module efficiency versus irradiance, as well as any non-uniformity of soiling, may introduce differences between the power losses estimated from short-circuit current values versus actual soiling-induced power losses. For CdTe, the SRIsc method is found to be a good proxy for the SRPmax method for nonuniform soiling levels up to 11%.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"3004-3009"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82086099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744154
D. Shimura, F. Ichihashi, K. Nishitani, S. Harada, M. Kuwahara, T. Ito, M. Matsunami, S. Kimura, T. Sakai, M. Tagawa, T. Ujihara
Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.
{"title":"Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice","authors":"D. Shimura, F. Ichihashi, K. Nishitani, S. Harada, M. Kuwahara, T. Ito, M. Matsunami, S. Kimura, T. Sakai, M. Tagawa, T. Ujihara","doi":"10.1109/PVSC.2013.6744154","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744154","url":null,"abstract":"Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"128 1","pages":"0306-0310"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76018203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744443
N. Kindyni, G. Georghiou
The analytical transient model for potential-induced degradation (PID) based on transistor aging, originally presented by the authors, is further developed here in an attempt to replicate the PID conditions more accurately. The improved model predicts the leakage current which is regarded as a measure of the PID intensity and is used to validate the model's ability to capture the PID effects. The results obtained show good agreement with the reports on PID phenomena of standard crystalline silicon photovoltaics. This confirms the hypothesis that the PID mechanism is similar to transistor aging concepts and provides additional justification for the adoption of transistor aging models as a basis for PID modeling.
{"title":"Application of an analytical model based on transistor concepts for the characterization of potential-induced degradation in crystalline silicon photovoltaics","authors":"N. Kindyni, G. Georghiou","doi":"10.1109/PVSC.2013.6744443","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744443","url":null,"abstract":"The analytical transient model for potential-induced degradation (PID) based on transistor aging, originally presented by the authors, is further developed here in an attempt to replicate the PID conditions more accurately. The improved model predicts the leakage current which is regarded as a measure of the PID intensity and is used to validate the model's ability to capture the PID effects. The results obtained show good agreement with the reports on PID phenomena of standard crystalline silicon photovoltaics. This confirms the hypothesis that the PID mechanism is similar to transistor aging concepts and provides additional justification for the adoption of transistor aging models as a basis for PID modeling.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"4 1","pages":"1559-1565"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88033819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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