Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745054
Zeng Guanggen, Zhang Jingquan, He Xulin, L. Bing, Wu Lili, Feng Lianghuan
In this paper, CdTe solar cells of ~10% efficiency with a structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ ZnTe/ZnTe:Cu/Au were irradiated by 1.7 MeV irradiation with various fluences. Testing methods, such as light and dark IV, quantum efficiency, admittance spectroscopy were used to study the performances of CdTe cells before and after irradiation. Comprehensive electron irradiation damage effect on the characteristics and physical mechanism of charge transport were analyzed. The results show that the main junction CdS/CdTe is easy being destroyed and there are two defects induced by high energy electron irradiation, whose positions in the forbidden band are close to 0.46±0.05 eV and 0.44±0.04 eV above the valence band, and capture cross sections are 1.32×10-15 cm2 and 3.09×10-15 cm2, respectively, and under different irradiation fluences, the quantum efficiency of the solar cells decreases, especially in 550nm-800nm. As a result, the short circuit current decreases after irradiation.
{"title":"The effect of irradiation on the mechanism of charge transport of CdTe solar cell","authors":"Zeng Guanggen, Zhang Jingquan, He Xulin, L. Bing, Wu Lili, Feng Lianghuan","doi":"10.1109/PVSC.2013.6745054","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745054","url":null,"abstract":"In this paper, CdTe solar cells of ~10% efficiency with a structure of anti-radiation glass/ITO/ZnO/CdS/CdTe/ ZnTe/ZnTe:Cu/Au were irradiated by 1.7 MeV irradiation with various fluences. Testing methods, such as light and dark IV, quantum efficiency, admittance spectroscopy were used to study the performances of CdTe cells before and after irradiation. Comprehensive electron irradiation damage effect on the characteristics and physical mechanism of charge transport were analyzed. The results show that the main junction CdS/CdTe is easy being destroyed and there are two defects induced by high energy electron irradiation, whose positions in the forbidden band are close to 0.46±0.05 eV and 0.44±0.04 eV above the valence band, and capture cross sections are 1.32×10-15 cm2 and 3.09×10-15 cm2, respectively, and under different irradiation fluences, the quantum efficiency of the solar cells decreases, especially in 550nm-800nm. As a result, the short circuit current decreases after irradiation.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88356752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745155
Chia-Ying Tsai, Po-Han Chen, Yang-Yue Huang, Huai-Te Pen, P. Yu, H. Meng
Hybrid organic-inorganic heterojunction solar cells based on silicon nanowires (SiNWs) are promising candidates for next-generation photovoltaics owing to potentials for low fabrication cost and high efficiency. The SiNW array, fabricated by a simple metal-assisted wet chemical etching method, produces a large surface-area-to-volume ratio, hence allowing efficient light harvesting and charge collection via the formation of a core-sheath p-n junction. However, previously reported power conversion efficiencies (PCEs) are approximately capped at 10%, which is largely depicted by the interface defect densities that limit the open-circuit voltage (Voc) and fill factor (FF). In this work, we introduce a solution-processed, intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) layer to mitigate the interface recombination loss for hybrid heterojunction solar cells consisted of SiNWs and conjugate polymer poly(3,4-ethylenedioxy-thiophene): poly(styrenesulfonate) (PEDOT:PSS). A record PCE of 11.0% is achieved in contrast to 9.6% from a reference counterpart without TAPC, which represents an enhancement factor of 14.2% ascribed to noticeable improvement in the Voc and FF. The result is further supported by examining indicators for the interface quality via a suppressed dark saturation current and an enhanced minority carrier lifetime which exhibits an increase from 84 μsec without TAPC to 87 μsec with TAPC.
{"title":"11%-Efficiency hybrid organic/silicon-nanowire heterojunction solar cell with an intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane layer","authors":"Chia-Ying Tsai, Po-Han Chen, Yang-Yue Huang, Huai-Te Pen, P. Yu, H. Meng","doi":"10.1109/PVSC.2013.6745155","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745155","url":null,"abstract":"Hybrid organic-inorganic heterojunction solar cells based on silicon nanowires (SiNWs) are promising candidates for next-generation photovoltaics owing to potentials for low fabrication cost and high efficiency. The SiNW array, fabricated by a simple metal-assisted wet chemical etching method, produces a large surface-area-to-volume ratio, hence allowing efficient light harvesting and charge collection via the formation of a core-sheath p-n junction. However, previously reported power conversion efficiencies (PCEs) are approximately capped at 10%, which is largely depicted by the interface defect densities that limit the open-circuit voltage (Voc) and fill factor (FF). In this work, we introduce a solution-processed, intermediate 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) layer to mitigate the interface recombination loss for hybrid heterojunction solar cells consisted of SiNWs and conjugate polymer poly(3,4-ethylenedioxy-thiophene): poly(styrenesulfonate) (PEDOT:PSS). A record PCE of 11.0% is achieved in contrast to 9.6% from a reference counterpart without TAPC, which represents an enhancement factor of 14.2% ascribed to noticeable improvement in the Voc and FF. The result is further supported by examining indicators for the interface quality via a suppressed dark saturation current and an enhanced minority carrier lifetime which exhibits an increase from 84 μsec without TAPC to 87 μsec with TAPC.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88404770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744198
W. Imler, R. Haun, Robin A. Lampson, M. Charles, Paul G. Meese, Samo Semenic
The first polysilicon ingot manufactured using the plasma-arc process was fabricated into simple photovoltaic devices with 16% efficiency. A larger 250-mm ID reaction vessel was installed in the plasma-arc system, and initial process optimization experiments have resulted in an additional 1.79X reduction in the B-reduction half-life. Conversion of SG-Si production capacity from the Siemens process to plasma-arc processing would result in substantial capital and energy savings, completely eliminate the use of toxic Cl compounds and substantially reduce both solid and liquid waste produced. The fully-loaded production cost of SG-Si manufactured using this process is estimated at $11-13/kg.
{"title":"Economic viability of a solar-grade silicon manufacturing process based upon plasma-arc refining","authors":"W. Imler, R. Haun, Robin A. Lampson, M. Charles, Paul G. Meese, Samo Semenic","doi":"10.1109/PVSC.2013.6744198","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744198","url":null,"abstract":"The first polysilicon ingot manufactured using the plasma-arc process was fabricated into simple photovoltaic devices with 16% efficiency. A larger 250-mm ID reaction vessel was installed in the plasma-arc system, and initial process optimization experiments have resulted in an additional 1.79X reduction in the B-reduction half-life. Conversion of SG-Si production capacity from the Siemens process to plasma-arc processing would result in substantial capital and energy savings, completely eliminate the use of toxic Cl compounds and substantially reduce both solid and liquid waste produced. The fully-loaded production cost of SG-Si manufactured using this process is estimated at $11-13/kg.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86276261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744256
Kenneth Armijo
Accurate performance and reliability evaluation of utility-scale photovoltaic (PV) systems requires accountability of solar gain contributions. A novel solar gain utility-scale inverter model has been developed to characterize inverter efficiency with respect to solar resource, general ambient conditions and thermal system losses. A sensitivity analysis was performed to evaluate the robustness of the model based on four assumed material properties. This analysis revealed 22.9% modeled internal inverter temperature sensitivity to surface absorptivity, with significantly less sensitivity to other parameters studied, indicating the impact of proper surface coating material selection on solar thermal absorption. This analysis was applied to a large utility-scale PV plant, assessing performance data from twelve 500kW inverters, and environmental data from twelve respective meteorological test stations. An RMSE value of 6.1% was found between the model and measured inner inverter temperatures. The results also suggest a negative 3.6×10-4 [W/m2]-1 normalized inverter efficiency correspondence with solar gain heat adsorption across the twelve inverters for a one-day, clear-sky time period.
{"title":"Performance impact of solar gain on photovoltaic inverters and utility-scale energy generation systems","authors":"Kenneth Armijo","doi":"10.1109/PVSC.2013.6744256","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744256","url":null,"abstract":"Accurate performance and reliability evaluation of utility-scale photovoltaic (PV) systems requires accountability of solar gain contributions. A novel solar gain utility-scale inverter model has been developed to characterize inverter efficiency with respect to solar resource, general ambient conditions and thermal system losses. A sensitivity analysis was performed to evaluate the robustness of the model based on four assumed material properties. This analysis revealed 22.9% modeled internal inverter temperature sensitivity to surface absorptivity, with significantly less sensitivity to other parameters studied, indicating the impact of proper surface coating material selection on solar thermal absorption. This analysis was applied to a large utility-scale PV plant, assessing performance data from twelve 500kW inverters, and environmental data from twelve respective meteorological test stations. An RMSE value of 6.1% was found between the model and measured inner inverter temperatures. The results also suggest a negative 3.6×10-4 [W/m2]-1 normalized inverter efficiency correspondence with solar gain heat adsorption across the twelve inverters for a one-day, clear-sky time period.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86173288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745016
Lin Jiang, Weiming Zhang, Tracy Guo, David Kapp, Li Yan, Larry Wang
The series resistance calculation based on H-type model has been widely used to understand power loss mechanism in semiconductor solar cell, and one of its popular applications is to predict optimal metallization screen printing pattern. The disadvantage of this model is that it is not accurate to estimate the relationship of screen pattern trend vs. cell efficiency, since it is based on an ideal rectangular finger shape, which does not exist in present regular screen printing process. In this work, a revised model is proposed to simulate the contact resistant power loss in multi-crystalline silicon solar cell. Improved accuracy of the new model is found by comparing the simulation results to the I-V testing data of multi-crystalline silicon solar cell printed with Heraeus 96XX front Ag paste.
{"title":"An improved mathematical modeling to simulate metallization screen pattern trend for silicon solar cell","authors":"Lin Jiang, Weiming Zhang, Tracy Guo, David Kapp, Li Yan, Larry Wang","doi":"10.1109/PVSC.2013.6745016","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745016","url":null,"abstract":"The series resistance calculation based on H-type model has been widely used to understand power loss mechanism in semiconductor solar cell, and one of its popular applications is to predict optimal metallization screen printing pattern. The disadvantage of this model is that it is not accurate to estimate the relationship of screen pattern trend vs. cell efficiency, since it is based on an ideal rectangular finger shape, which does not exist in present regular screen printing process. In this work, a revised model is proposed to simulate the contact resistant power loss in multi-crystalline silicon solar cell. Improved accuracy of the new model is found by comparing the simulation results to the I-V testing data of multi-crystalline silicon solar cell printed with Heraeus 96XX front Ag paste.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86195748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744125
Chen-Hao Yang, Jui-Chen Pu, Ya-Wen Chang, L. Liao, S. Tzeng, Wen-Pin Chen, Yu-Chung Chen
Quasi-mono (mono-like) is a well-known process for ingot growth that has potential to significantly increase cell performance over traditional multi-crystalline based silicon solar cells. In general, ingot is divided into A, B, C area. In this presentation, cells made from A and B areas average efficiency are comparable to traditional multi-crystalline cell made from DSS method by acid-texturing process. Cells from C area reached 19.08% conversion efficiency in average and over 19.40% in champion cell by using alkaline-texturing process with conventional screen printing technology. Quasi-mono wafers by alkaline-texturing process can be able to reach 260-265W 60 cells-module at lower cost per Wp due to much lower wafer cost in comparison with mono-crystalline wafer.
{"title":"19.4% Quasi-mono cells by conventional screen printing technology","authors":"Chen-Hao Yang, Jui-Chen Pu, Ya-Wen Chang, L. Liao, S. Tzeng, Wen-Pin Chen, Yu-Chung Chen","doi":"10.1109/PVSC.2013.6744125","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744125","url":null,"abstract":"Quasi-mono (mono-like) is a well-known process for ingot growth that has potential to significantly increase cell performance over traditional multi-crystalline based silicon solar cells. In general, ingot is divided into A, B, C area. In this presentation, cells made from A and B areas average efficiency are comparable to traditional multi-crystalline cell made from DSS method by acid-texturing process. Cells from C area reached 19.08% conversion efficiency in average and over 19.40% in champion cell by using alkaline-texturing process with conventional screen printing technology. Quasi-mono wafers by alkaline-texturing process can be able to reach 260-265W 60 cells-module at lower cost per Wp due to much lower wafer cost in comparison with mono-crystalline wafer.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86308452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744314
Weiguo Hu, M. E. Fauzi, M. Igarashi, A. Higo, Ming-Yi Lee, Yiming Li, N. Usami, S. Samukawa
A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.
{"title":"Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications","authors":"Weiguo Hu, M. E. Fauzi, M. Igarashi, A. Higo, Ming-Yi Lee, Yiming Li, N. Usami, S. Samukawa","doi":"10.1109/PVSC.2013.6744314","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744314","url":null,"abstract":"A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82876982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745134
D. Forbes, C. Bailey, S. Polly, A. Podell, S. Hubbard
The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the layers within the QD region should lead to improved PV performance. This includes the QD layer itself, but also the surrounding barrier and/or strain balancing layers that comprise the QD active region. In this paper, the effect of the GaAs capping layer thickness (i.e. the first layer grown following QD) on the optoelectronic properties of InAs QDs was investigated. The GaAs capping layer plays a crucial role in the physical and optoelectronic properties of the QD. The GaAs capping thickness strongly modifies the InAs QD wavelength and also enhances the QD emission relative to the wetting layer (WL) emission. This behavior implies a suppression of WL emission that is thought to be a drawback to high-efficiency photovoltaic performance. In the final paper, we investigate how this WL PL-suppression affects the performance of QD-enhanced GaAs single junction solar cell performance.
{"title":"The effect of GaAs capping layer thickness on quantum dot solar cell performance","authors":"D. Forbes, C. Bailey, S. Polly, A. Podell, S. Hubbard","doi":"10.1109/PVSC.2013.6745134","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745134","url":null,"abstract":"The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the layers within the QD region should lead to improved PV performance. This includes the QD layer itself, but also the surrounding barrier and/or strain balancing layers that comprise the QD active region. In this paper, the effect of the GaAs capping layer thickness (i.e. the first layer grown following QD) on the optoelectronic properties of InAs QDs was investigated. The GaAs capping layer plays a crucial role in the physical and optoelectronic properties of the QD. The GaAs capping thickness strongly modifies the InAs QD wavelength and also enhances the QD emission relative to the wetting layer (WL) emission. This behavior implies a suppression of WL emission that is thought to be a drawback to high-efficiency photovoltaic performance. In the final paper, we investigate how this WL PL-suppression affects the performance of QD-enhanced GaAs single junction solar cell performance.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82899042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745039
J. Nepal, S. S. Mottaghian, Anastasiia Iefanova, Venkataiah Mallam, M. Biesecker, M. Baroughi
Despite the evidences on the significance of TiO2/dye/electrolyte interface states on the performance of Dye Sensitized Solar Cell (DSSC), no previous model has incorporated interfacial trap-assisted charge transfer processes to model recombination rate in DSSCs. A new charge transport model for DSSC is presented in this paper based on physics of electron capture, electron emission, oxidation and reduction processes mediated by the deep interfacial trap states. The model suggests that recombination in DSSC is due to trapping of conduction band electrons by deep defect states followed by reduction process at the interface. The model has been investigated through simulated quantum efficiency, dark and illuminated IV characteristics. The simulated results based on this model are in good accord with the experimental results.
尽管有证据表明TiO2/染料/电解质界面状态对染料敏化太阳能电池(dye Sensitized Solar Cell, DSSC)的性能具有重要意义，但之前没有模型将界面陷阱辅助的电荷转移过程纳入DSSC中的重组率模型。基于深界面阱态介导的电子捕获、电子发射、氧化和还原等物理过程，提出了一种新的DSSC电荷输运模型。该模型表明，DSSC中的复合是由于深缺陷态捕获导带电子，然后在界面处进行还原过程。通过模拟量子效率、暗腔和光照腔的特性对该模型进行了研究。基于该模型的仿真结果与实验结果吻合较好。
{"title":"Modeling trap assisted recombination in Dye Sensitized Solar Cells","authors":"J. Nepal, S. S. Mottaghian, Anastasiia Iefanova, Venkataiah Mallam, M. Biesecker, M. Baroughi","doi":"10.1109/PVSC.2013.6745039","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745039","url":null,"abstract":"Despite the evidences on the significance of TiO2/dye/electrolyte interface states on the performance of Dye Sensitized Solar Cell (DSSC), no previous model has incorporated interfacial trap-assisted charge transfer processes to model recombination rate in DSSCs. A new charge transport model for DSSC is presented in this paper based on physics of electron capture, electron emission, oxidation and reduction processes mediated by the deep interfacial trap states. The model suggests that recombination in DSSC is due to trapping of conduction band electrons by deep defect states followed by reduction process at the interface. The model has been investigated through simulated quantum efficiency, dark and illuminated IV characteristics. The simulated results based on this model are in good accord with the experimental results.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91511559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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