Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744098
D. Young, C. Teplin, S. Grover, Benjamin G. Lee, Jihun Oh, V. LaSalvia, D. Amkreutz, S. Gall, Monica M Chahal, Greg J. Couillard, T. Chuang, J. Selj, M. Deceglie, H. Atwater, H. Branz, P. Stradins
We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.
{"title":"600 mV epitaxial crystal silicon solar cells grown on seeded glass","authors":"D. Young, C. Teplin, S. Grover, Benjamin G. Lee, Jihun Oh, V. LaSalvia, D. Amkreutz, S. Gall, Monica M Chahal, Greg J. Couillard, T. Chuang, J. Selj, M. Deceglie, H. Atwater, H. Branz, P. Stradins","doi":"10.1109/PVSC.2013.6744098","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744098","url":null,"abstract":"We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown on single-crystal silicon layer transfer seeds on glass achieved open circuit voltages (Voc) over 600 mV and efficiencies over 10%. Other devices were grown on laser crystallized mixed phase solidification (MPS) seeds on glass and e-beam crystallized (EBC) a-Si on SiC coated glass seeds. We discuss the material quality of the various devices on seeds and summarize the prospects for the seed and epitaxy PV approach.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"29 1","pages":"0054-0057"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78216507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744146
H. Fujii, K. Toprasertpong, Kentaroh Watanabe, M. Sugiyama, Y. Nakano
Carrier Collection Efficiency (CCE) is proposed as an effective evaluation measure of carrier transport in quantum nanostructure solar cells. CCE can be estimated by normalizing the illumination-induced current enhancement to its saturation value at reverse bias. The derivation procedure of CCE is experimentally validated by examining the bias-dependency of light absorption, and investigating the balance between the absorbed photons and collected carriers at reverse bias. The effect of AM1.5 bias-illumination for CCE characterization was also studied, and found to be much significant for more accurate evaluation of carrier dynamics during actual device operation under sunlight.
{"title":"Comprehensive validation of Carrier Collection Efficiency in multiple quantum well solar cells: For more effective and direct evaluation of carrier transport dynamics","authors":"H. Fujii, K. Toprasertpong, Kentaroh Watanabe, M. Sugiyama, Y. Nakano","doi":"10.1109/PVSC.2013.6744146","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744146","url":null,"abstract":"Carrier Collection Efficiency (CCE) is proposed as an effective evaluation measure of carrier transport in quantum nanostructure solar cells. CCE can be estimated by normalizing the illumination-induced current enhancement to its saturation value at reverse bias. The derivation procedure of CCE is experimentally validated by examining the bias-dependency of light absorption, and investigating the balance between the absorbed photons and collected carriers at reverse bias. The effect of AM1.5 bias-illumination for CCE characterization was also studied, and found to be much significant for more accurate evaluation of carrier dynamics during actual device operation under sunlight.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"108 1","pages":"0277-0280"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76116317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744424
I. Chung, H.-Y. Son, H. Oh, Un-il Baek, Na-Ri Yoon, Won-jae Lee, E.-C. Cho, I. Moon
Study on the structure that enhances the absorption of the reflected light from the interconnect ribbon at active cell area is presented. Light Capturing Film (LCF) is designed and attached onto the surface of the ribbon to increase the light absorption. The result of PV mini-module with the proposed structure shows 1.3% Isc improvement compared to normal structure.
{"title":"Light Capturing Film on interconnect ribbon for current gain of crystalline silicon PV modules","authors":"I. Chung, H.-Y. Son, H. Oh, Un-il Baek, Na-Ri Yoon, Won-jae Lee, E.-C. Cho, I. Moon","doi":"10.1109/PVSC.2013.6744424","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744424","url":null,"abstract":"Study on the structure that enhances the absorption of the reflected light from the interconnect ribbon at active cell area is presented. Light Capturing Film (LCF) is designed and attached onto the surface of the ribbon to increase the light absorption. The result of PV mini-module with the proposed structure shows 1.3% Isc improvement compared to normal structure.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"55 1","pages":"1478-1480"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75040436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744218
A. Kolodziej, T. Kolodziej, Michał Kołodziej
Progress in fabrication and application of the nanocrystalline silicon thin films in opto-electronic devices like solar cells, thin film transistors, memory cells, etc., is a way to further enhance their parameters. Those films exhibit increased stability, absorption, carrier mobility. They also exhibit scattering and anti-/reflection properties. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). The authors describe the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. Additionally, the influence of chamber pre-annealing on resulting type of matrix with nanocrystalline inclusions, a-Si:H or SiOx, and differences between them are discussed. The authors also present the Secondary Ion Mass Spectrometry (SIMS) analyses and the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H or SiOx matrix.
{"title":"Low temperature manufacturing of Si nanocrystallites in the SiOx matrix applicable in solar cells","authors":"A. Kolodziej, T. Kolodziej, Michał Kołodziej","doi":"10.1109/PVSC.2013.6744218","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744218","url":null,"abstract":"Progress in fabrication and application of the nanocrystalline silicon thin films in opto-electronic devices like solar cells, thin film transistors, memory cells, etc., is a way to further enhance their parameters. Those films exhibit increased stability, absorption, carrier mobility. They also exhibit scattering and anti-/reflection properties. This paper is focused on the technology of manufacturing such films by means of Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). The authors describe the manufacturing process based on periodical variation of the process parameters, such as hydrogen to silane ratio (Rh), gas flows, RF power and pressure in the process chamber, during the deposition process. Additionally, the influence of chamber pre-annealing on resulting type of matrix with nanocrystalline inclusions, a-Si:H or SiOx, and differences between them are discussed. The authors also present the Secondary Ion Mass Spectrometry (SIMS) analyses and the measurements of typical samples with High Resolution Transmission Electron Microscopy (HRTEM), which confirms the existence of the nanocrystallites in the a-Si:H or SiOx matrix.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"0580-0585"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79948961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744103
H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann
A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.
{"title":"Series resistance mapping of III-V multijunction solar cells based on luminescence imaging","authors":"H. Nesswetter, Wilhelm Dyck, P. Lugli, A. Bett, C. Zimmermann","doi":"10.1109/PVSC.2013.6744103","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744103","url":null,"abstract":"A method for spatially resolved series resistance measurements of Ga0.5In0.5P/Ga(In)As/Ge triple-junction solar cells based on electro- and photoluminescence imaging is presented. The results gained from luminescence images of all three subcells clearly indicate the main contributions to the series resistance like interrupted gridfingers, the frontside metallization itself and the top cell emitter layer. Test cells with partially electron irradiated areas are used to demonstrate that the method is not sensitive to inhomogeneous dark I-V parameters.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"46 1","pages":"0076-0080"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80012475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744905
M. Burrows, A. Meisel, D. Balakrishnan, A. Tran, D. Inns, E. Kim, A. Carroll, K. Mikeska
The standard silicon solar cell process continues on an evolutionary improvement path. High quality monocrystalline cells are now able to reach 19.2 % conversion efficiencies in industrial production. A key enabler for these high efficiencies has been the front-side Ag contact. This paper will discuss recent developments in this technology on two parallel fronts: reduced recombination and fine line printing. Front-side Ag can reduce solar cell recombination currents directly through reduced metal contact saturation current. In addition front-side Ag can indirectly lower recombination through improved contact formation to low saturation current emitters (lightly doped emitters, or LDE). Through improvements in the frit chemistry a superior recombination performance was enabled, yielding a 3 mV Voc gain and 0.1 % efficiency gain over the control. Improvements in the Ag particle dimensions and paste rheology reduced the optimum finger width approximately 10 μm, increasing Jsc by 0.3 mA/cm2 improving the efficiency gain another 0.1 % over the incumbent technology. In net we are able to demonstrate a next generation front-side Ag paste that can improve efficiency 0.2 %, from 18.8 % to 19.0 %.
{"title":"Front-side Ag contacts enabling superior recombination and fine-line performance","authors":"M. Burrows, A. Meisel, D. Balakrishnan, A. Tran, D. Inns, E. Kim, A. Carroll, K. Mikeska","doi":"10.1109/PVSC.2013.6744905","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744905","url":null,"abstract":"The standard silicon solar cell process continues on an evolutionary improvement path. High quality monocrystalline cells are now able to reach 19.2 % conversion efficiencies in industrial production. A key enabler for these high efficiencies has been the front-side Ag contact. This paper will discuss recent developments in this technology on two parallel fronts: reduced recombination and fine line printing. Front-side Ag can reduce solar cell recombination currents directly through reduced metal contact saturation current. In addition front-side Ag can indirectly lower recombination through improved contact formation to low saturation current emitters (lightly doped emitters, or LDE). Through improvements in the frit chemistry a superior recombination performance was enabled, yielding a 3 mV Voc gain and 0.1 % efficiency gain over the control. Improvements in the Ag particle dimensions and paste rheology reduced the optimum finger width approximately 10 μm, increasing Jsc by 0.3 mA/cm2 improving the efficiency gain another 0.1 % over the incumbent technology. In net we are able to demonstrate a next generation front-side Ag paste that can improve efficiency 0.2 %, from 18.8 % to 19.0 %.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"321 1","pages":"2171-2175"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80247137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744355
Jea-Young Choi, C. Honsberg
A reactive ion etching (RIE) process has been applied to etch diverse shape of nanoscale surface texturing on crystalline silicon (c-Si) for solar cell application. In this work, silica nanospheres (NS) were used as a mask material to utilize selective etching between silicon surface and silica NS for texturing. For effective silica NS deposition, we also developed our own solvent-control spin-coating method showing great monolayer coverage under common laboratory environment which is possibly more suitable for low-cost fabrication compared to conventional approach (moisture and temperature controlled spin-coating or dipping coating method by Langmuir-Blodgett trough). In RIE process, the surface texturing was etched with various shapes to reduce the reflectivity from surface, and the spectral response measurement confirms the effectiveness of RIE texturing which showed phenomenal anti-reflection effect with less than 2% of light reflection below 1.0 um wavelength. In addition, experiments for Quinhydrone/Methanol (QHY/ME) surface passivation for RIE textured surface were proceeded to evaluate RIE texturing effect for surface recombination velocity and minority carrier lifetime.
{"title":"Reactive ion etching surface texturing of c-Si using silica nanosphere lithography technique for solar cell application","authors":"Jea-Young Choi, C. Honsberg","doi":"10.1109/PVSC.2013.6744355","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744355","url":null,"abstract":"A reactive ion etching (RIE) process has been applied to etch diverse shape of nanoscale surface texturing on crystalline silicon (c-Si) for solar cell application. In this work, silica nanospheres (NS) were used as a mask material to utilize selective etching between silicon surface and silica NS for texturing. For effective silica NS deposition, we also developed our own solvent-control spin-coating method showing great monolayer coverage under common laboratory environment which is possibly more suitable for low-cost fabrication compared to conventional approach (moisture and temperature controlled spin-coating or dipping coating method by Langmuir-Blodgett trough). In RIE process, the surface texturing was etched with various shapes to reduce the reflectivity from surface, and the spectral response measurement confirms the effectiveness of RIE texturing which showed phenomenal anti-reflection effect with less than 2% of light reflection below 1.0 um wavelength. In addition, experiments for Quinhydrone/Methanol (QHY/ME) surface passivation for RIE textured surface were proceeded to evaluate RIE texturing effect for surface recombination velocity and minority carrier lifetime.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"1199-1202"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81548025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744149
F. Ichihashi, D. Shimura, K. Nishitani, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara
In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.
{"title":"Electron spectroscopy of conduction electrons excited by visible light utilizing NEA surface","authors":"F. Ichihashi, D. Shimura, K. Nishitani, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara","doi":"10.1109/PVSC.2013.6744149","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744149","url":null,"abstract":"In this paper we propose an angle-resolved photoemission spectroscopy to observe the conduction electrons emitted from a surface of negative electron affinity state. In actual, we have measured conduction electrons in a GaAs bulk crystal and obtained the electron dispersion around Γ point. In addition, we could also observe hot electrons excited by the light which energy was much larger than band gap energy. These results suggest that the method we proposed is one of the most powerful tools for the evaluation method of the conduction band.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"51 1","pages":"0288-0291"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84269326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6745129
S. Athreya, Rahul Sharma, A. Lokhande, R. Feist, K. Kauffmann, L. López, M. Mills
The use of finite element analysis (FEA) and lab testing is gaining acceptance within the photovoltaic (PV) industry and is being increasingly used to “design-in” reliability into a product by investigating damage based on anticipated field conditions and environmental stressors. This paper presents a case study on the use of FEA to predict crystalline silicon (c-Si) cell fracture within a laminate subjected to bending loads (analogous to stepping loads during installation and loads experienced under rack-mounting and seasonal wind and snow conditions). Challenges related to development of a material model (that could be incorporated into the FE models) for c-Si cells are discussed. The use of electroluminescence (EL) as a diagnostic technique to detect fracture of c-Si cells within laminates is discussed. Finally, the use of in-situ Voc measurements during three-point bend testing in detecting failure events (in un-aged laminates and those aged under accelerated testing conditions) is also described. This could potentially be a new test method to investigate the effects of accelerated testing on the mechanical integrity of different parts of the electrical assembly such as the cells, weld and solder joints.
{"title":"Reliability of crystalline silicon photovoltaic laminates: Test development and finite element analysis","authors":"S. Athreya, Rahul Sharma, A. Lokhande, R. Feist, K. Kauffmann, L. López, M. Mills","doi":"10.1109/PVSC.2013.6745129","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6745129","url":null,"abstract":"The use of finite element analysis (FEA) and lab testing is gaining acceptance within the photovoltaic (PV) industry and is being increasingly used to “design-in” reliability into a product by investigating damage based on anticipated field conditions and environmental stressors. This paper presents a case study on the use of FEA to predict crystalline silicon (c-Si) cell fracture within a laminate subjected to bending loads (analogous to stepping loads during installation and loads experienced under rack-mounting and seasonal wind and snow conditions). Challenges related to development of a material model (that could be incorporated into the FE models) for c-Si cells are discussed. The use of electroluminescence (EL) as a diagnostic technique to detect fracture of c-Si cells within laminates is discussed. Finally, the use of in-situ Voc measurements during three-point bend testing in detecting failure events (in un-aged laminates and those aged under accelerated testing conditions) is also described. This could potentially be a new test method to investigate the effects of accelerated testing on the mechanical integrity of different parts of the electrical assembly such as the cells, weld and solder joints.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"3179-3184"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86007042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-06-16DOI: 10.1109/PVSC.2013.6744886
K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi
Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.
{"title":"Preferential N-H bond orientation in GaAsN grown by chemical beam epitaxy","authors":"K. Ikeda, M. Inagaki, N. Kojima, Y. Ohshita, M. Yamaguchi","doi":"10.1109/PVSC.2013.6744886","DOIUrl":"https://doi.org/10.1109/PVSC.2013.6744886","url":null,"abstract":"Two N-H local vibration modes at 961 and 2952 cm-1 in GaAsN grown by the chemical beam epitaxy have the same preferential N-H bond orientation. The integrated IR absorption intensities showed the two-fold rotational symmetry in (001) plane, which means that the N-H bond directions tend to align along [1-10] in (001) plane. However, the vibration modes at 961 and 2952 cm-1 were indicated to belong to the different types of N-H complexes. Therefore, the different types of N-H complexes have the same preferential N-H bond orientation.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"53 1 1","pages":"2092-2094"},"PeriodicalIF":0.0,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80922402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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