Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425176
Xiuping Yu, Liping Wang, J. Di
High density gold nanoparticles (GNPs) on indium tin oxide (ITO) film coated glass have been prepared by electrochemical deposition from KAu(CN)2 solution. In this study, suitable applied potential ranges and deposition cycles are chosen to achieve high density GNPs on ITO surface. The potential utility of the high density GNP/ITO substrate are investigated. The superoxide dismutase (SOD) was immobilized on this substrate to fabricate a superoxide anion biosensor. The biosensor exhibits a rapid and high response to superoxide anion.
{"title":"Electrochemical deposition of high density gold nanoparticles on indium/tin oxide electrode for fabrication of superoxide anion biosensor","authors":"Xiuping Yu, Liping Wang, J. Di","doi":"10.1109/INEC.2010.5425176","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425176","url":null,"abstract":"High density gold nanoparticles (GNPs) on indium tin oxide (ITO) film coated glass have been prepared by electrochemical deposition from KAu(CN)2 solution. In this study, suitable applied potential ranges and deposition cycles are chosen to achieve high density GNPs on ITO surface. The potential utility of the high density GNP/ITO substrate are investigated. The superoxide dismutase (SOD) was immobilized on this substrate to fabricate a superoxide anion biosensor. The biosensor exhibits a rapid and high response to superoxide anion.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"30 1","pages":"848-849"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83581733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424516
P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of T-QWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.
{"title":"Photoreflectance study of strained GaAsN/GaAs T-junction quantum wires grown by MOVPE","authors":"P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe","doi":"10.1109/INEC.2010.5424516","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424516","url":null,"abstract":"GaAsN/GaAs T-junction quantum wires (T-QWRs) grown by two steps of metal-organic vapor phase epitaxy growth technique in (001) and (110) directions have been investigated by photoreflectance (PR) spectroscopy. PR resonances associated with extended states in all of GaAsN quantum well (QW) and TQWR have been observed. An evidence of a one-dimensional structure at T-intersection of the two quantum wells on the (001) and (110) surfaces was clearly confirmed. Further evidence of T-QWRs was investigated by temperature dependence of PR spectra from 10 to 300 K. For GaAsN T-QWRs, PR peak position remain constant when temperature increases from 10 to 100 K. This indicates high thermal stability of QWRs structure.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"43 1","pages":"402-403"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83591141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424887
W. Hong, Xiaohan Sun
A novel add-drop filter based on microring embedded with several resonator cavities is proposed, and the effects of the numbers and radius of the cavities, as well as gaps between cavities and microring, on the performance of this filter are analyzed. The simulations show the spectrum of the filter could be improved when the resonance of cavities inside the microring are excited. This filter exhibits much smaller size and better spectrum than the conventional microring filter.
{"title":"Ultra compact microring with resonator cavities inside","authors":"W. Hong, Xiaohan Sun","doi":"10.1109/INEC.2010.5424887","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424887","url":null,"abstract":"A novel add-drop filter based on microring embedded with several resonator cavities is proposed, and the effects of the numbers and radius of the cavities, as well as gaps between cavities and microring, on the performance of this filter are analyzed. The simulations show the spectrum of the filter could be improved when the resonance of cavities inside the microring are excited. This filter exhibits much smaller size and better spectrum than the conventional microring filter.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"41 1","pages":"1311-1312"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85440871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425056
K. Sun, Mujun Chen, Bo-Yun Shiu, Yung-Fang Lu, Jen-Chieh Chung, Yu-Chang Liu, Yu-Zhen Zeng, Hong‐Wen Wang
Highly-ordered TiO2 nanotube arrays (TNA) by anodizing Ti foil were carried out using a slightly modified electrochemical process. The parameters such as anodization potentials and duration have been varied in order to fabricate the specific length and diameter of TNA. The morphologies of TNA were characterized by field emission scanning electron microscope (Hitachi S-4100 FE-SEM). The crystalline phase and structure were analyzed using X-ray diffraction (Rigaku, XRD). The processing anodic current density with time was recorded by Keithley 2400. The photocurrents induced by UV-light were characterized by CHI 611. The performance of hydrogen production from photoelectrocatalytic effect of larger diameter TNA is found to be higher than the smaller diameter TNA. Base on the microstructure and calculation, we confirmed that larger diameter TNA do exhibit higher surface area.
{"title":"Synthesis and characterization of highly ordered TiO2 nanotube arrays","authors":"K. Sun, Mujun Chen, Bo-Yun Shiu, Yung-Fang Lu, Jen-Chieh Chung, Yu-Chang Liu, Yu-Zhen Zeng, Hong‐Wen Wang","doi":"10.1109/INEC.2010.5425056","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425056","url":null,"abstract":"Highly-ordered TiO2 nanotube arrays (TNA) by anodizing Ti foil were carried out using a slightly modified electrochemical process. The parameters such as anodization potentials and duration have been varied in order to fabricate the specific length and diameter of TNA. The morphologies of TNA were characterized by field emission scanning electron microscope (Hitachi S-4100 FE-SEM). The crystalline phase and structure were analyzed using X-ray diffraction (Rigaku, XRD). The processing anodic current density with time was recorded by Keithley 2400. The photocurrents induced by UV-light were characterized by CHI 611. The performance of hydrogen production from photoelectrocatalytic effect of larger diameter TNA is found to be higher than the smaller diameter TNA. Base on the microstructure and calculation, we confirmed that larger diameter TNA do exhibit higher surface area.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"3 1","pages":"1037-1038"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85842329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424735
Sungwoo Choi, E. Cho, ByungWook Kim, Jiseok Lim, Jeongwon Han, Y. Heo, Seok-min Kim, Miroo Kim, Hyungil Jung, Shinill Kang
Interest in protein sensors using guided-mode resonance (GMR) filters is rapidly growing as the demand for sensitive and reliable protein sensors increases in clinical diagnostic applications and pharmaceutical research. GMR filter-based protein sensors are capable of high sensitivity in the detection of molecular interactions, by measuring the movement of sharp reflectance peaks. We designed a GMR filter by computer simulation, and created a prototype by UV nanoimprinting, using a highly durable metallic nano stamp, which was fabricated by electroforming process with a polymeric master pattern. We also demonstrated the use of this GMR filter as a protein sensor by measuring the peak wavelength value (PWV) and the PWV shift.
{"title":"Replication of label-free guided mode resonance filter for protein-sensors using UV nanoimprinting process with metallic nano stamp","authors":"Sungwoo Choi, E. Cho, ByungWook Kim, Jiseok Lim, Jeongwon Han, Y. Heo, Seok-min Kim, Miroo Kim, Hyungil Jung, Shinill Kang","doi":"10.1109/INEC.2010.5424735","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424735","url":null,"abstract":"Interest in protein sensors using guided-mode resonance (GMR) filters is rapidly growing as the demand for sensitive and reliable protein sensors increases in clinical diagnostic applications and pharmaceutical research. GMR filter-based protein sensors are capable of high sensitivity in the detection of molecular interactions, by measuring the movement of sharp reflectance peaks. We designed a GMR filter by computer simulation, and created a prototype by UV nanoimprinting, using a highly durable metallic nano stamp, which was fabricated by electroforming process with a polymeric master pattern. We also demonstrated the use of this GMR filter as a protein sensor by measuring the peak wavelength value (PWV) and the PWV shift.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"104 1","pages":"344-345"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78087136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424761
Wei-Chin Wang, Shu-Tong Chang, B. Hsieh
Subband structure and effective mass of strained SiGe (110) inversion layer in PMOSFET are studied theoretically in this study. The strain conditions considered include the intrinsic stress resulting from growing the various composition of SiGe alloy layers on the (110) Si substrate. The quantum confinement effect resulting from the surface induced electric field in the interface is incorporated in the k.p calculation. The change of constant energy surface due to strain effects are calculated for subband structure. The density of states effective mass, mC, the conductivity mass, mσ, and the quantization effective mass(mz) of the channel in the [110] direction of strained SiGe (110) inversion layer for PMOS under substrate strain and various surface induced electric field strengths are all investigated.
{"title":"Subband structure and effective mass of strained SiGe (110) inversion layer for PMOSFET","authors":"Wei-Chin Wang, Shu-Tong Chang, B. Hsieh","doi":"10.1109/INEC.2010.5424761","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424761","url":null,"abstract":"Subband structure and effective mass of strained SiGe (110) inversion layer in PMOSFET are studied theoretically in this study. The strain conditions considered include the intrinsic stress resulting from growing the various composition of SiGe alloy layers on the (110) Si substrate. The quantum confinement effect resulting from the surface induced electric field in the interface is incorporated in the k.p calculation. The change of constant energy surface due to strain effects are calculated for subband structure. The density of states effective mass, mC, the conductivity mass, mσ, and the quantization effective mass(mz) of the channel in the [110] direction of strained SiGe (110) inversion layer for PMOS under substrate strain and various surface induced electric field strengths are all investigated.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"295 1","pages":"598-599"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73320516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424811
Yuanchao Liu, B. Sun, Zhao Ding, Wei Li
Synthesis carbon nanofibers from V-type pyrolysis flame is a novel technique. It need only simple experimental conditions and equipments. The V-type pyrolysis flame experimental apparatus is introduced. Carbon nanofibers were characterized by scanning electron microscope and transmission electron microscope. Carbon monoxide is as carbon source and the acetylene/air premixed gas provides heat by combustion. Hydrogen/helium premixed gas acts as diluted and protection gas. Ferric nitrate was served as catalyst precursor. Experimental results indicated that carbon nanofibers can be captured when ferric nitrate was served as catalyst precursor and sampling time was 7 minutes. The appropriate diameter of catalyst particles is from 20 to 50 nm. There will be much impurity and worse morphology carbon nanofibers if the diameter of catalyst particle is above 50nm.
{"title":"Preparation of carbon nanofibers using ferric nitrate from the V-type pyrolysis flame","authors":"Yuanchao Liu, B. Sun, Zhao Ding, Wei Li","doi":"10.1109/INEC.2010.5424811","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424811","url":null,"abstract":"Synthesis carbon nanofibers from V-type pyrolysis flame is a novel technique. It need only simple experimental conditions and equipments. The V-type pyrolysis flame experimental apparatus is introduced. Carbon nanofibers were characterized by scanning electron microscope and transmission electron microscope. Carbon monoxide is as carbon source and the acetylene/air premixed gas provides heat by combustion. Hydrogen/helium premixed gas acts as diluted and protection gas. Ferric nitrate was served as catalyst precursor. Experimental results indicated that carbon nanofibers can be captured when ferric nitrate was served as catalyst precursor and sampling time was 7 minutes. The appropriate diameter of catalyst particles is from 20 to 50 nm. There will be much impurity and worse morphology carbon nanofibers if the diameter of catalyst particle is above 50nm.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"6 1","pages":"462-463"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80346544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425048
Yongcai Qiu, Wei Chen, Shihe Yang
Rutile TiO2 nanorods were synthesized by surfactant assisted thermal hydrolysis of TiCl4 in an acidic solution. A uniform thin layer of carbon coating on the TiO2 nanorods was formed by in-situ reduction of carbon precursor molecules. The resulting TiO2@C nanorods were subjected to electrochemical measurements for testing their lithium electroactivity. The TiO2@C nanorods show a reversible capacity of ∼220 mA h g−1 at C/5 and ∼185 mA h g−1 at 1C, which are much better than those with bare TiO2 nanorods and commercial P25 nanoparticles measured under the same conditions. The significantly enhanced reversible capacity and rate capability evinces the dramatic increase of the average electron conductivity and structural stability of the anode composite material due to the thin carbon coating layer.
在酸性溶液中，采用表面活性剂辅助二氧化钛热水解法制备了金红石型二氧化钛纳米棒。通过原位还原碳前驱体分子，在TiO2纳米棒上形成了一层均匀的薄碳涂层。得到的TiO2@C纳米棒进行了电化学测量，以测试其锂电活性。TiO2@C纳米棒在C/5温度下的可逆容量为~ 220 mA h g - 1，在1C温度下的可逆容量为~ 185 mA h g - 1，比在相同条件下测量的裸TiO2纳米棒和商用P25纳米棒的可逆容量要好得多。阳极复合材料的可逆容量和速率能力显著增强，说明薄碳涂层显著提高了阳极复合材料的平均电子导电性和结构稳定性。
{"title":"Synthesis and high lithium electroactivity of rutile TiO2@C nanorods","authors":"Yongcai Qiu, Wei Chen, Shihe Yang","doi":"10.1109/INEC.2010.5425048","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425048","url":null,"abstract":"Rutile TiO<inf>2</inf> nanorods were synthesized by surfactant assisted thermal hydrolysis of TiCl<inf>4</inf> in an acidic solution. A uniform thin layer of carbon coating on the TiO<inf>2</inf> nanorods was formed by in-situ reduction of carbon precursor molecules. The resulting TiO<inf>2</inf>@C nanorods were subjected to electrochemical measurements for testing their lithium electroactivity. The TiO<inf>2</inf>@C nanorods show a reversible capacity of ∼220 mA h g<sup>−1</sup> at C/5 and ∼185 mA h g<sup>−1</sup> at 1C, which are much better than those with bare TiO<inf>2</inf> nanorods and commercial P25 nanoparticles measured under the same conditions. The significantly enhanced reversible capacity and rate capability evinces the dramatic increase of the average electron conductivity and structural stability of the anode composite material due to the thin carbon coating layer.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"14 1","pages":"1042-1043"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76700944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424734
Anoop K. Gupta, Sonja Hartner, H. Wiggers
For the fabrication of optoelectronic devices based on silicon nanoparticles (Si-NPs), it is very important to understand their optical and electrical behavior. In this paper, we present the optical and electrical properties of Si-NPs. We demonstrate that the optical properties of Si-NPs depend on their size as well as their surface chemistry. The size of Si-NPs was finely tuned by etching them in a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) for different times. The resulting Si- NPs exhibit bright luminescence across the visible spectrum. In order to stabilize the optical emission, the surface of freshly etched Si-NPs was successfully functionalized with organic molecules.As the surface chemistry is also expected to strongly influence the electrical transport between Si-NPs and therefore the electrical properties of Si-NP ensembles, the conductivity of pellets consisting of Si-NPs was measured using impedance spectroscopy. The surface oxide of Si-NPs was removed by etching them with HF acid. The freshly etched Si-NPs showed much higher conductivity compared to as-prepared samples. The surface functionalization of freshly etched Si-NPs slightly decreases their conductivity. However, it was observed that the conductivity was still much higher compared to as-prepared samples.
{"title":"Optical and electrical properties of silicon nanoparticles","authors":"Anoop K. Gupta, Sonja Hartner, H. Wiggers","doi":"10.1109/INEC.2010.5424734","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424734","url":null,"abstract":"For the fabrication of optoelectronic devices based on silicon nanoparticles (Si-NPs), it is very important to understand their optical and electrical behavior. In this paper, we present the optical and electrical properties of Si-NPs. We demonstrate that the optical properties of Si-NPs depend on their size as well as their surface chemistry. The size of Si-NPs was finely tuned by etching them in a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) for different times. The resulting Si- NPs exhibit bright luminescence across the visible spectrum. In order to stabilize the optical emission, the surface of freshly etched Si-NPs was successfully functionalized with organic molecules.As the surface chemistry is also expected to strongly influence the electrical transport between Si-NPs and therefore the electrical properties of Si-NP ensembles, the conductivity of pellets consisting of Si-NPs was measured using impedance spectroscopy. The surface oxide of Si-NPs was removed by etching them with HF acid. The freshly etched Si-NPs showed much higher conductivity compared to as-prepared samples. The surface functionalization of freshly etched Si-NPs slightly decreases their conductivity. However, it was observed that the conductivity was still much higher compared to as-prepared samples.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"616-617"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78828298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424659
A. Asgari, L. R. Bonab
In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface. This model built up with incorporation of fully and partially occupied sub-bands in the interface quantum well, combined with a numerically self-consistent solution of the Schrödinger and Poisson equations. In addition, the polarization effects, and self-heating are also taken into account.
{"title":"Charge transport model of gate solution AlGaN/GaN high electron mobility transistors","authors":"A. Asgari, L. R. Bonab","doi":"10.1109/INEC.2010.5424659","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424659","url":null,"abstract":"In this article, a transport model of gate solution AlGaN/GaN high electron mobility transistor has been developed that is capable of accurately predicting the sensitivity of the drain current as well as small-signal parameters such as drain conductance, device transconductance and cutoff frequency to PH values of the electrolyte and to charged adsorbents at the semiconductor-electrolyte interface. This model built up with incorporation of fully and partially occupied sub-bands in the interface quantum well, combined with a numerically self-consistent solution of the Schrödinger and Poisson equations. In addition, the polarization effects, and self-heating are also taken into account.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"51 1","pages":"664-665"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78889721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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