Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424695
Xinghua Liu, Z. Ji, Deyu Tu, Liwei Shang, Ming Liu, Changing Xie
In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-µm CMOS technology. One transistor and one resistor (1T–1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 103.
{"title":"Organic-inorganic hybrid circuit with organic memory and MOSFET","authors":"Xinghua Liu, Z. Ji, Deyu Tu, Liwei Shang, Ming Liu, Changing Xie","doi":"10.1109/INEC.2010.5424695","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424695","url":null,"abstract":"In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-µm CMOS technology. One transistor and one resistor (1T–1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 103.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82539089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424872
S. Mitatha, S. Noppanakeepong, J. Ali, P. Yupapin
We have experimentally generated the optical tweezers in the form of a dark soliton pulse using the Stimulated Brillouin Scattering (SBS) system. This is the first time ever found on the use of the highly intense pulse in the form of a dark soliton to perform the dynamic light trapping probe known as a “dynamic optical tweezers”. The advantage of the generated tweezers is that it can be used to transmit and transport the trapping atom/molecule into the optical device and communication network, which can be claimed as the dynamic optical tweezers transportation, for used in many frontier applications. The multi-optical tweezers generated, with high capacity regime can then be used for multi-optical tweezers transmission. The various applications to form the frontier research using photon, atom, molecule, DNA, electron and ion trapping for atomic tools, tiny synchrotron, molecular networks, bottom up atom/molecule assembly, ozone repair etc. are described. The experimental details and model of the optical tweezers generation and related characteristics are described. The interesting simulation results of a dark soliton generation for the optical tweezers are also analyzed and discussed in various applications.
{"title":"Dynamic optical tweezers: Experiment","authors":"S. Mitatha, S. Noppanakeepong, J. Ali, P. Yupapin","doi":"10.1109/INEC.2010.5424872","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424872","url":null,"abstract":"We have experimentally generated the optical tweezers in the form of a dark soliton pulse using the Stimulated Brillouin Scattering (SBS) system. This is the first time ever found on the use of the highly intense pulse in the form of a dark soliton to perform the dynamic light trapping probe known as a “dynamic optical tweezers”. The advantage of the generated tweezers is that it can be used to transmit and transport the trapping atom/molecule into the optical device and communication network, which can be claimed as the dynamic optical tweezers transportation, for used in many frontier applications. The multi-optical tweezers generated, with high capacity regime can then be used for multi-optical tweezers transmission. The various applications to form the frontier research using photon, atom, molecule, DNA, electron and ion trapping for atomic tools, tiny synchrotron, molecular networks, bottom up atom/molecule assembly, ozone repair etc. are described. The experimental details and model of the optical tweezers generation and related characteristics are described. The interesting simulation results of a dark soliton generation for the optical tweezers are also analyzed and discussed in various applications.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80916535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424943
Yuan Gao, C. Lan, J. Xue, Sha Yan, Yugang Wang, F. Xu, B. Shen
We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2µm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. Erosion of GaN surface was obvious with implantation at the fluence of 3×1016 cm−2. The experiment showed that the damaged GaN area could be completely etched out at high ion fluence, and the etching depth could exceed the project range of incident 500 keV Au+ ion. The ∼400nm depth etching could be achieved with high fluence implantation and a long etching time, and the edge of etched area could remain clear until the etching process passes 80 mins. As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect. ∼70nm wave of the GaN surface was observed. The results of our experiments may suggest an approach to the fabricating of GaN devices.
{"title":"Enhanced wet etching of patterned GaN with heavy-ion implantation","authors":"Yuan Gao, C. Lan, J. Xue, Sha Yan, Yugang Wang, F. Xu, B. Shen","doi":"10.1109/INEC.2010.5424943","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424943","url":null,"abstract":"We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2µm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. Erosion of GaN surface was obvious with implantation at the fluence of 3×1016 cm−2. The experiment showed that the damaged GaN area could be completely etched out at high ion fluence, and the etching depth could exceed the project range of incident 500 keV Au+ ion. The ∼400nm depth etching could be achieved with high fluence implantation and a long etching time, and the edge of etched area could remain clear until the etching process passes 80 mins. As-deposited SiO2 spheres were used to mask the GaN sample in implantation process to investigate the etching effect. ∼70nm wave of the GaN surface was observed. The results of our experiments may suggest an approach to the fabricating of GaN devices.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82867490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425025
K. Lee, Sang-Hun Nam, H. Seo, Sang Duck Lee, Y. D. Kim, J. Boo
In the previous work, we reported that TiO2 nanorods could be successfully grown on Ta substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. In the mean time, columnar-structured C doped TiO2 was grown on glass substrates by MOCVD method. For change of surface properties, grown columnar-structured C-TiO2 was treated by O2 plasma. After O2 plasma treatment, the surface property of grown columnar-structured C-TiO2 changed from hydrophobic surface to super hydrophilic surface. For determination of this mechanism, scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), FT-IR spectroscopy, and contact angle analyzer were employed.
{"title":"Study on the changes of surface property of grown C-TiO2 films by O2 plasma treatment","authors":"K. Lee, Sang-Hun Nam, H. Seo, Sang Duck Lee, Y. D. Kim, J. Boo","doi":"10.1109/INEC.2010.5425025","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425025","url":null,"abstract":"In the previous work, we reported that TiO2 nanorods could be successfully grown on Ta substrates using titanium tetra isopropoxide (TTIP) as a single precursor without any carriers or bubbling gases. In the mean time, columnar-structured C doped TiO2 was grown on glass substrates by MOCVD method. For change of surface properties, grown columnar-structured C-TiO2 was treated by O2 plasma. After O2 plasma treatment, the surface property of grown columnar-structured C-TiO2 changed from hydrophobic surface to super hydrophilic surface. For determination of this mechanism, scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), FT-IR spectroscopy, and contact angle analyzer were employed.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90238402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424635
Yuchao Li, R. K. Li, S. Tjong
Binary BaTiO3/PVDF nanocomposites and its nanographite (GN) doped ternary hybrids were fabricated using simple solution casting and hot compression molding. The dielectric behavior of such hybrids over a wide frequency range was studied. Additions of graphite nanosheets with their concentrations close to percolation threshold were found to be very effective to enhance the dielectric permittivity of GN/BaTiO3/PVDF nanocomposites. Furthermore, both dielectric constant and electrical conductivity of hybrids displayed strong frequency and temperature dependence.
{"title":"Dielectric properties of binary BaTiO3/PVDF and graphite doped GN/BaTiO3/PVDF nanocomposites","authors":"Yuchao Li, R. K. Li, S. Tjong","doi":"10.1109/INEC.2010.5424635","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424635","url":null,"abstract":"Binary BaTiO3/PVDF nanocomposites and its nanographite (GN) doped ternary hybrids were fabricated using simple solution casting and hot compression molding. The dielectric behavior of such hybrids over a wide frequency range was studied. Additions of graphite nanosheets with their concentrations close to percolation threshold were found to be very effective to enhance the dielectric permittivity of GN/BaTiO3/PVDF nanocomposites. Furthermore, both dielectric constant and electrical conductivity of hybrids displayed strong frequency and temperature dependence.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89654546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424476
H. Yang, Jong Won Chung, Soung Wook Park, J. Jeong, K. Jang, Hongye Li, S. Yi
Y3Al5O12:Eu3+ powders were synthesized by a high-energy ball mill and characterized. The effects of the crystal size on the crystallinity, morphology, structure and luminescence spectra were investigated by X-ray diffraction, field emission-scanning electron microscopy and photoluminescence spectroscopy (PL). Compared to the solid state reaction method, synthesis by high-energy ball milling is simple, easy to carry out, and the raw materials are commercially available.
{"title":"Grystal growth and photoluminescence properties of Eu3+-doped Y3Al5O12 nanocrystals by high-energy ball milling","authors":"H. Yang, Jong Won Chung, Soung Wook Park, J. Jeong, K. Jang, Hongye Li, S. Yi","doi":"10.1109/INEC.2010.5424476","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424476","url":null,"abstract":"Y3Al5O12:Eu3+ powders were synthesized by a high-energy ball mill and characterized. The effects of the crystal size on the crystallinity, morphology, structure and luminescence spectra were investigated by X-ray diffraction, field emission-scanning electron microscopy and photoluminescence spectroscopy (PL). Compared to the solid state reaction method, synthesis by high-energy ball milling is simple, easy to carry out, and the raw materials are commercially available.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89781102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424648
M. Sittishoktram, U. Asawapirom, T. Osotchan
Relationship between the changing in structure and the electrical properties of modified poly(3-hexylthiophene) (P3HT) was examined. For modified P3HT two types of acceptor molecules including 1,4-Bis(5-brothien-2-yl)-2,3,5,6-tetrafluoro benzene (TFT) and 2,1,3-benzothiadiazole (Bz) were added into the main chain of P3HT. These modifications have the effect to molecular ordering of modified polymer thin film. The structural and optical characteristics of modified polymer were investigated by X-ray diffraction (XRD) and UV-visible absorption spectroscopy. By comparing to characteristic of pristine P3HT, the XRD pattern of modified polymer showed the shift of diffraction peak with decrease in intensity. These indicate that modified polymer chain reduced in structural coplanarity and crystallinity. Since the electrical property relates to the morphology and structure of thin film, the I-V characteristic of modified polymer thin film was measured with aluminum electrode and the results show the decrease in current relative to that in pristine P3HT. Furthermore, the mobility of modified polymer was also evaluated by using time of flight measurement with the structure of ITO/modified P3HT/Al at room temperature. The measured mobilities of modified is agree well with the I-V characteristics and this can demonstrate the effect of molecular ordering on its carrier conduction.
{"title":"Relationship between electrical properties and structure for modified poly(3-hexylthiophene) copolymer thin films","authors":"M. Sittishoktram, U. Asawapirom, T. Osotchan","doi":"10.1109/INEC.2010.5424648","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424648","url":null,"abstract":"Relationship between the changing in structure and the electrical properties of modified poly(3-hexylthiophene) (P3HT) was examined. For modified P3HT two types of acceptor molecules including 1,4-Bis(5-brothien-2-yl)-2,3,5,6-tetrafluoro benzene (TFT) and 2,1,3-benzothiadiazole (Bz) were added into the main chain of P3HT. These modifications have the effect to molecular ordering of modified polymer thin film. The structural and optical characteristics of modified polymer were investigated by X-ray diffraction (XRD) and UV-visible absorption spectroscopy. By comparing to characteristic of pristine P3HT, the XRD pattern of modified polymer showed the shift of diffraction peak with decrease in intensity. These indicate that modified polymer chain reduced in structural coplanarity and crystallinity. Since the electrical property relates to the morphology and structure of thin film, the I-V characteristic of modified polymer thin film was measured with aluminum electrode and the results show the decrease in current relative to that in pristine P3HT. Furthermore, the mobility of modified polymer was also evaluated by using time of flight measurement with the structure of ITO/modified P3HT/Al at room temperature. The measured mobilities of modified is agree well with the I-V characteristics and this can demonstrate the effect of molecular ordering on its carrier conduction.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89293083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424952
Chun Li, Yang Huang, Y. Bando, D. Golberg
The stacked-cone morphology GaN nanorods with diameters of 100–400 nm and lengths of tens of micrometers were synthesized by metal-catalyzed chemical vapor deposition. The stacked-cone GaN nanorods possessed dominated hexagonal crystalline structure with growth direction along [0001]. TEM analysis showed that the top tip had a bicrystal structure of hexagonal and cubic phases, while the stem and side tip had single hexagonal phase. Room temperature field emission test showed the turn-on field was 8.9 V/µm at 0.1 µA/cm2 and current density was about 0.1 mA/cm2 at 14.2 V/µm at a vacuum gap of 70 µm. The field enhancement factor β and anode-cathode gap d follows a universal equation. The simple synthesis method and good emission properties imply their potential application in vacuum microelectronic.
{"title":"Structural characterization and field emission of stacked-cone GaN nanorods","authors":"Chun Li, Yang Huang, Y. Bando, D. Golberg","doi":"10.1109/INEC.2010.5424952","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424952","url":null,"abstract":"The stacked-cone morphology GaN nanorods with diameters of 100–400 nm and lengths of tens of micrometers were synthesized by metal-catalyzed chemical vapor deposition. The stacked-cone GaN nanorods possessed dominated hexagonal crystalline structure with growth direction along [0001]. TEM analysis showed that the top tip had a bicrystal structure of hexagonal and cubic phases, while the stem and side tip had single hexagonal phase. Room temperature field emission test showed the turn-on field was 8.9 V/µm at 0.1 µA/cm2 and current density was about 0.1 mA/cm2 at 14.2 V/µm at a vacuum gap of 70 µm. The field enhancement factor β and anode-cathode gap d follows a universal equation. The simple synthesis method and good emission properties imply their potential application in vacuum microelectronic.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89390895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425142
N. Hamizi, M. Johan
CdSe colloidal nanocrystals (∼3.4 nm) with zinc blende structure were synthesized at low temperature and at different reaction time via inverse micelle technique. CdSe QDs FTIR spectra show the existence of cadmium selenide compound and long alkane chains solvents. The Cd-Se band stretching can be observed at ∼722 cm−1. All other peaks are corresponding to the structural bond of oleic acid and paraffin oil with cadmium selenide QDs e.i ∼1377, 1463, 2853, 2924 and 2953 cm−1. CH3 bending deformed behaviour can be observed at ∼1377 cm−1 and CH2 bending band behaviour at ∼1463 cm−1. Also the present of CH2 stretching at ∼2853, 2924 and 2953 cm−1. The presence of peak at ∼1712 cm−1 proof of capping of as-prepared CdSe QDs by oleic acid. Interestingly, there is no peak observed at ≫3000 cm−1 compared to FTIR spectra of CdSe QDs prepared by TOP based route that confirmed the elimination of hydroxide and amine group from non-TOP based route CdSe QDs samples. From this study, it also can be observed that almost all existed peak in FTIR spectra shows slightly shifting behaviour toward larger wavenumber as the crystal size increases.
{"title":"Optical and FTIR studies of CdSe quantum dots","authors":"N. Hamizi, M. Johan","doi":"10.1109/INEC.2010.5425142","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425142","url":null,"abstract":"CdSe colloidal nanocrystals (∼3.4 nm) with zinc blende structure were synthesized at low temperature and at different reaction time via inverse micelle technique. CdSe QDs FTIR spectra show the existence of cadmium selenide compound and long alkane chains solvents. The Cd-Se band stretching can be observed at ∼722 cm<sup>−1</sup>. All other peaks are corresponding to the structural bond of oleic acid and paraffin oil with cadmium selenide QDs e.i ∼1377, 1463, 2853, 2924 and 2953 cm<sup>−1</sup>. CH<inf>3</inf> bending deformed behaviour can be observed at ∼1377 cm<sup>−1</sup> and CH<inf>2</inf> bending band behaviour at ∼1463 cm<sup>−1</sup>. Also the present of CH<inf>2</inf> stretching at ∼2853, 2924 and 2953 cm<sup>−1</sup>. The presence of peak at ∼1712 cm<sup>−1</sup> proof of capping of as-prepared CdSe QDs by oleic acid. Interestingly, there is no peak observed at ≫3000 cm<sup>−1</sup> compared to FTIR spectra of CdSe QDs prepared by TOP based route that confirmed the elimination of hydroxide and amine group from non-TOP based route CdSe QDs samples. From this study, it also can be observed that almost all existed peak in FTIR spectra shows slightly shifting behaviour toward larger wavenumber as the crystal size increases.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86506044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424652
B. Li, Q. Chen, Z. Liu, Z. Wang
In this study, a large gap of the distance between electrodes (≫5.5 mm) of Ar atmospheric pressure glow discharge (APGD) in radio frequency dielectric barrier discharges (RF-DBD) is achieved. The I-V characteristic and I-phase angle characteristic of RF-DBD are studied in detail. The discharge characteristic of Ar mixed with N2, O2 and Air, respectively, was diagnosed by the optical emission spectrum. The Lissajous plot was measured to calculate the effective power of the discharges. It is obtained that the mixture gas ratio in RF-DBD is seriously affected the discharge stability and the discharge mode. It concludes that this adjustable manufacture of the RF-DBD is capable in wide applications for material modifications and polymerizations.
{"title":"A large gap of Ar and mixed gas at atmospheric pressure RF-DBD glow discharges","authors":"B. Li, Q. Chen, Z. Liu, Z. Wang","doi":"10.1109/INEC.2010.5424652","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424652","url":null,"abstract":"In this study, a large gap of the distance between electrodes (≫5.5 mm) of Ar atmospheric pressure glow discharge (APGD) in radio frequency dielectric barrier discharges (RF-DBD) is achieved. The I-V characteristic and I-phase angle characteristic of RF-DBD are studied in detail. The discharge characteristic of Ar mixed with N2, O2 and Air, respectively, was diagnosed by the optical emission spectrum. The Lissajous plot was measured to calculate the effective power of the discharges. It is obtained that the mixture gas ratio in RF-DBD is seriously affected the discharge stability and the discharge mode. It concludes that this adjustable manufacture of the RF-DBD is capable in wide applications for material modifications and polymerizations.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87577428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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