Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424755
F. Karimi, R. Hosseini
In this paper we have used quantum mechanical transport approach to analyze electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyses employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical transport model uses the non equilibrium Green's function (NEGF) [1] while the semi classic model doesn't account for tunneling current. We investigate the effect of tunneling current on I-V characteristics of Nanowire transistor with the different channel length. We have used of NANO TCAD ViDES software to analyze a DG (double gate) silicon nano wire transistor. We get that when the channel length increases to20nm and upper, tunneling is significant only for inversion condition, while for low gate voltages the error between these two models is negligible.
{"title":"A quantum mechanical transport approach to analyze of DG Silicon nanowire transistor","authors":"F. Karimi, R. Hosseini","doi":"10.1109/INEC.2010.5424755","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424755","url":null,"abstract":"In this paper we have used quantum mechanical transport approach to analyze electrical characteristics of silicon nanowire transistor and have compared the results with those obtained using semi classical Boltzmann transport model. The analyses employs a three dimensional simulation of Silicon nanowire transistor based on self consistent solution of Poisson, Schrodinger equations. Quantum mechanical transport model uses the non equilibrium Green's function (NEGF) [1] while the semi classic model doesn't account for tunneling current. We investigate the effect of tunneling current on I-V characteristics of Nanowire transistor with the different channel length. We have used of NANO TCAD ViDES software to analyze a DG (double gate) silicon nano wire transistor. We get that when the channel length increases to20nm and upper, tunneling is significant only for inversion condition, while for low gate voltages the error between these two models is negligible.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78399332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425117
H. Jin, Bo He, N. Gao, Zongren Peng
The microstructure and resistivity of AlN/BN ceramic nano-composites and micro-composites were investigated. The results showed that because the nano-BN crystals were homogeneously dispersed around the AlN grains of the matrix, the conductive glass phase surround AlN grains were separated, and the it was difficult to form the electric conductible consecutive passageway (than micro composites), the leakage conductance of nano-composites was far lower than micro- composites.
{"title":"Microstructure and resistivity of machinable AlN/h-BN ceramic nanocomposites","authors":"H. Jin, Bo He, N. Gao, Zongren Peng","doi":"10.1109/INEC.2010.5425117","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425117","url":null,"abstract":"The microstructure and resistivity of AlN/BN ceramic nano-composites and micro-composites were investigated. The results showed that because the nano-BN crystals were homogeneously dispersed around the AlN grains of the matrix, the conductive glass phase surround AlN grains were separated, and the it was difficult to form the electric conductible consecutive passageway (than micro composites), the leakage conductance of nano-composites was far lower than micro- composites.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76017144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424624
Haiqin Zhong, Yaqing Chi, He Sun, Chao Zhang, Liang Fang
In this paper we develop the macromodeling of single electron transistor (SET) based on the actual experiment results and the proposed model. Single electron transistors are supposed to be among the top candidates for the kernel devices of logic circuits in the post-CMOS period of near future. To develop an efficient model can be very useful for the simulation of large scale SET circuit. This model which is less time-consuming and reproduce the actual experiment results reasonably is fit for the simulation of SET circuit.
{"title":"Macromodeling of realistic single electron transistors for large scale circuit simulation","authors":"Haiqin Zhong, Yaqing Chi, He Sun, Chao Zhang, Liang Fang","doi":"10.1109/INEC.2010.5424624","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424624","url":null,"abstract":"In this paper we develop the macromodeling of single electron transistor (SET) based on the actual experiment results and the proposed model. Single electron transistors are supposed to be among the top candidates for the kernel devices of logic circuits in the post-CMOS period of near future. To develop an efficient model can be very useful for the simulation of large scale SET circuit. This model which is less time-consuming and reproduce the actual experiment results reasonably is fit for the simulation of SET circuit.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75095931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424528
N. Yu, R. Blanchard, Jonathan A. Fan, Qi Jie Wang, M. Kats, F. Capasso
Plasmonics involves manipulation of surface plasmons (SPs), which are collective oscillations of surface electrons in metal interacting with an electromagnetic field. Plasmonic structures provide compact and integrated optical processing, where planar metallic structures can be used to manipulate the amplitude and phase of SPs in two dimensions at the subwavelength level. By integrating plasmonic structures on active optical devices, one can engineer and fabricate devices with small footprints and special beam profiles in the near-field and/or in the far-field. This talk summarizes our recent work on building integrated plasmonic collimators, beam splitters, and polarizers for semiconductor lasers.
{"title":"Wavefront engineering of semiconductor lasers using plasmonics","authors":"N. Yu, R. Blanchard, Jonathan A. Fan, Qi Jie Wang, M. Kats, F. Capasso","doi":"10.1109/INEC.2010.5424528","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424528","url":null,"abstract":"Plasmonics involves manipulation of surface plasmons (SPs), which are collective oscillations of surface electrons in metal interacting with an electromagnetic field. Plasmonic structures provide compact and integrated optical processing, where planar metallic structures can be used to manipulate the amplitude and phase of SPs in two dimensions at the subwavelength level. By integrating plasmonic structures on active optical devices, one can engineer and fabricate devices with small footprints and special beam profiles in the near-field and/or in the far-field. This talk summarizes our recent work on building integrated plasmonic collimators, beam splitters, and polarizers for semiconductor lasers.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74948149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424581
Wei Zhao, Ruzhi Wang, FengYing Wang, Siying Chen, Bo Wang, Hao Wang, Hui Yan
GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN two-layer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.
{"title":"Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition","authors":"Wei Zhao, Ruzhi Wang, FengYing Wang, Siying Chen, Bo Wang, Hao Wang, Hui Yan","doi":"10.1109/INEC.2010.5424581","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424581","url":null,"abstract":"GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN two-layer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80511225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425047
P. Yeh, C. Tsai
Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/µm) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.
{"title":"Synthesis and electrical properties of the metal-silicide nanostructures","authors":"P. Yeh, C. Tsai","doi":"10.1109/INEC.2010.5425047","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425047","url":null,"abstract":"Metal silicide nanostructures have been synthesized by spontaneous chemical vapor transport and reaction method. The temperature and the vapor flow rate were shown to critically influence the growth of nanostructures. Various phases and morphologies, such as single-stem nanowires, three-dimensional nanowires networks, and aloe-like nanowires have been synthesized. Very low turn-on field (1.42 V/µm) and good conductance in field-emission and electrical property measurements indicates that metal-silicide nanowires is potentially useful.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81816333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424985
S. Cheng, C. Lo
We report here the successful fabrication of large-area size-and site-controlled periodic arrays of Si nanowires by employing the colloidal nanosphere lithography technique and Au-assisted selective chemical etching process. The vertically-aligned Si nanowires with diameters down to 190 nm and 90 nm were selectively formed at particular positions on the pre-patterned (001)Si substrates. All the Si nanowires produced were single crystalline in nature and their axial orientations were identified to be parallel to the [001] direction. The experimental results demonstrated that with suitable etching conditions, these synthesis schemes provide the capability to fabricate a variety of periodic arrays of Si-based nanodevices.
{"title":"Fabrication of Si nanowire arrays selectively formed on pre-patterned (001)Si substrates","authors":"S. Cheng, C. Lo","doi":"10.1109/INEC.2010.5424985","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424985","url":null,"abstract":"We report here the successful fabrication of large-area size-and site-controlled periodic arrays of Si nanowires by employing the colloidal nanosphere lithography technique and Au-assisted selective chemical etching process. The vertically-aligned Si nanowires with diameters down to 190 nm and 90 nm were selectively formed at particular positions on the pre-patterned (001)Si substrates. All the Si nanowires produced were single crystalline in nature and their axial orientations were identified to be parallel to the [001] direction. The experimental results demonstrated that with suitable etching conditions, these synthesis schemes provide the capability to fabricate a variety of periodic arrays of Si-based nanodevices.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84564447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850 °C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.
{"title":"Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray diffraction (XRD) and X-Ray photoelectron spectroscopy (XPS)","authors":"Chuan-Hsi Liu, P. Juan, Chin-Pao Cheng, Guan-Ting Lai, Huan Lee, Yi-Kuan Chen, Yu-Wei Liu, Chih-Wei Hsu","doi":"10.1109/INEC.2010.5424914","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424914","url":null,"abstract":"Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850°C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. According to the XRD patterns, Y2O3 films remain amorphous after 850 °C annealing. Moreover, also confirmed by XPS results, the formation of yttrium silicates (YSiO) was observed after 650°C annealing, and the silicate thickness increases with the annealing temperature. It is suggested that the thickness of the silicate layer YSiO dominates the gate leakage current of the MOS capacitors.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85372821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424542
Sung-Uk Jang, S. Hyun, Hwan-Soo Lee, Soon-Ju Kwon, Ji-Hong Kim, K. Park, Hak-Joo Lee
The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase.
{"title":"In-situ synchrotron X-ray diffraction measurement of epitaxial FeRh thin films","authors":"Sung-Uk Jang, S. Hyun, Hwan-Soo Lee, Soon-Ju Kwon, Ji-Hong Kim, K. Park, Hak-Joo Lee","doi":"10.1109/INEC.2010.5424542","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424542","url":null,"abstract":"The magnetic properties and structure of FeRh thin film epitaxially grown onto MgO(001) substrate were studied by MPMS(Magnetic Properties Measure System) and in-situ temperature synchrotron XRD(X-ray Diffraction). The transition temperature of FeRh thin films was around 380K. Both M-T curve and d-spacing changes correspond to each other very closely. Abrupt changes in the lattice constants can be observed from the in-situ analysis. Also, there is the likelihood of existence of a new phase.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85939229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425107
Y. Tao, Yongsheng Wang, M. Fu, D. He
Nanostructured semiconducting metal oxides such as nanotube, nanowires, nanoribbons and nanofibers are of considerable interest for solar energy conversion, sensors and in various electronic applications. In this study, ZnO nanofibers with extremely high length/diameter ratio and well-aligned ZnO nanorod arrays were synthesized by hydrothermal method, respectively, on Si substrates. Si substrates were covered with predeposited ZnO films as seed layers, which were deposited by DC magnetron sputtering. A growth mechanism involving nanorods were built from tiny nanowires of smaller diameter fusing together was inferred from SEM study of ZnO nanorod arrays. Also, growth positions of ZnO nanorod arrays were easily controlled via coating the ZnO seed layer with patterned photoresist “mask” fabricated by conventional photolithography. ZnO nanostructures would not grow on the organic mask due to the lack of ZnO nucleation sites on the organic resist layer. The design and preparing process of these ZnO nanostructures are in principle substrate-independent and occurs on flat surfaces regardless of their crystallinity or surface chemistry.
{"title":"One dimensional ZnO nanostrucures grown on ZnO/Si by hydrothermal process","authors":"Y. Tao, Yongsheng Wang, M. Fu, D. He","doi":"10.1109/INEC.2010.5425107","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425107","url":null,"abstract":"Nanostructured semiconducting metal oxides such as nanotube, nanowires, nanoribbons and nanofibers are of considerable interest for solar energy conversion, sensors and in various electronic applications. In this study, ZnO nanofibers with extremely high length/diameter ratio and well-aligned ZnO nanorod arrays were synthesized by hydrothermal method, respectively, on Si substrates. Si substrates were covered with predeposited ZnO films as seed layers, which were deposited by DC magnetron sputtering. A growth mechanism involving nanorods were built from tiny nanowires of smaller diameter fusing together was inferred from SEM study of ZnO nanorod arrays. Also, growth positions of ZnO nanorod arrays were easily controlled via coating the ZnO seed layer with patterned photoresist “mask” fabricated by conventional photolithography. ZnO nanostructures would not grow on the organic mask due to the lack of ZnO nucleation sites on the organic resist layer. The design and preparing process of these ZnO nanostructures are in principle substrate-independent and occurs on flat surfaces regardless of their crystallinity or surface chemistry.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81122930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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