首页 > 最新文献

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2最新文献

英文 中文
Rapid fabrication of Cu(In,Ga)Se2 thin films by the two-step selenization process 两步硒化法快速制备Cu(In,Ga)Se2薄膜
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656749
S. Ishizuka, L. Mansfield, C. Dehart, M. Scott, B. To, M. Young, B. Egaas, R. Noufi
Two-step processes currently used for the industrial Cu(In,Ga)Se2 (CIGS) module production require a long process time of several hours for the CIGS absorber formation. In this paper, we are studying the reaction pathway to rapid selenization of stacked metal precursors in elemental Se vapor. The objective is to understand the reaction kinetics to find the best precursor structure and the optimal selenization conditions to form high-quality CIGS films with proper Ga depth profiles. In addition to stacked metal precursors, the effect of the use of Se-containing precursors was also examined. As expected, the stacking order of themetal precursors influences the properties of the resultingCIGS absorbers. The Cu amount deposited for the precursor formation critically affected the final film and cell properties, as well.We also found that the formation of CIGS films with large grain sizes and flat Ga depth profiles was possible even for [Cu]/([In] + [Ga]) < 1 conditions with the use of particular precursor structures and selenization conditions. The results suggest that the selenization reaction pathway can be dictated with the precursor structure, and further improvements are expected by controlling reaction kinetics with precursor structure modification.
目前用于工业Cu(In,Ga)Se2 (CIGS)模块生产的两步工艺需要几个小时的长时间来形成CIGS吸收剂。本文研究了在单质硒蒸气中叠置金属前驱体快速硒化的反应途径。目的是了解反应动力学,寻找最佳前驱体结构和最佳硒化条件,以形成具有合适Ga深度分布的高质量CIGS膜。除了堆叠金属前体外,还研究了含硒前体的使用效果。正如预期的那样,金属前驱体的堆叠顺序影响所得cigs吸收剂的性能。沉积在前驱体中的铜的数量对最终的薄膜和电池性能也有很大的影响。我们还发现,即使在[Cu]/([In] + [Ga]) < 1的条件下,使用特定的前驱体结构和硒化条件,也可以形成具有大晶粒尺寸和平坦Ga深度分布的CIGS薄膜。结果表明,硒化反应途径可以由前驱体结构决定,通过修饰前驱体结构来控制反应动力学,有望进一步改善反应过程。
{"title":"Rapid fabrication of Cu(In,Ga)Se2 thin films by the two-step selenization process","authors":"S. Ishizuka, L. Mansfield, C. Dehart, M. Scott, B. To, M. Young, B. Egaas, R. Noufi","doi":"10.1109/pvsc-vol2.2013.6656749","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656749","url":null,"abstract":"Two-step processes currently used for the industrial Cu(In,Ga)Se2 (CIGS) module production require a long process time of several hours for the CIGS absorber formation. In this paper, we are studying the reaction pathway to rapid selenization of stacked metal precursors in elemental Se vapor. The objective is to understand the reaction kinetics to find the best precursor structure and the optimal selenization conditions to form high-quality CIGS films with proper Ga depth profiles. In addition to stacked metal precursors, the effect of the use of Se-containing precursors was also examined. As expected, the stacking order of themetal precursors influences the properties of the resultingCIGS absorbers. The Cu amount deposited for the precursor formation critically affected the final film and cell properties, as well.We also found that the formation of CIGS films with large grain sizes and flat Ga depth profiles was possible even for [Cu]/([In] + [Ga]) < 1 conditions with the use of particular precursor structures and selenization conditions. The results suggest that the selenization reaction pathway can be dictated with the precursor structure, and further improvements are expected by controlling reaction kinetics with precursor structure modification.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83718961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells 高温对GaInP2/GaAs/Ge三结电池辐射损伤的影响
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656726
C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev
We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.
本文报道了1 MeV电子辐照的GaInP2/GaAs/Ge三结太阳能电池组件电池的等温退火行为。缺陷浓度作为退火时间和温度的函数由原位测量的开路电压得到。时间依赖行为揭示了缺陷浓度存在部分重叠的指数衰减,这反过来表明退火了多个具有不同活化能的缺陷。
{"title":"The influence of high temperatures on radiation damage of GaInP2/GaAs/Ge triple junction cells","authors":"C. Brandt, C. Baur, A. Caon, P. Muller-Buschbaum, C. Zimmermann, T. Andreev","doi":"10.1109/pvsc-vol2.2013.6656726","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656726","url":null,"abstract":"We report on the isothermal annealing behavior of 1 MeV electron irradiated component cells of a GaInP2/GaAs/Ge triple-junction solar cell. The defect concentration as a function of annealing time and temperature is derived from the in-situ measured open circuit voltages. The time dependent behavior reveals the presence of partly overlapping exponential decays in defect concentration which in turn suggest the annealing of more than one defect having different activation energies.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83131308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Kesterite successes, ongoing work, and challenges: A perspective from vacuum deposition Kesterite的成功,正在进行的工作和挑战:从真空沉积的角度来看
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656774
I. Repins, M. Romero, Jian V. Li, S. Wei, D. Kuciauskas, Chunsheng Jiang, C. Beall, C. Dehart, J. Mann, Wan-Ching Hsu, G. Teeter, A. Goodrich, R. Noufi
Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of midgap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.
近年来,kesterite器件的性能有了显著的提高。由许多不同技术制成的具有类似性能的设备的存在,为材料的基本特性提供了一些新的视角。在这里,我们回顾了kesterite器件制造的进展,薄膜特性尚未被理解的方面,以及器件开发中的挑战,这些挑战仍然使kesterite对光伏制造做出重大贡献。讨论了带隙合金的性能目标、中隙缺陷密度、自由载流子密度、表面、晶界、晶粒均匀性和带隙合金化的特性。
{"title":"Kesterite successes, ongoing work, and challenges: A perspective from vacuum deposition","authors":"I. Repins, M. Romero, Jian V. Li, S. Wei, D. Kuciauskas, Chunsheng Jiang, C. Beall, C. Dehart, J. Mann, Wan-Ching Hsu, G. Teeter, A. Goodrich, R. Noufi","doi":"10.1109/pvsc-vol2.2012.6656774","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2012.6656774","url":null,"abstract":"Recent years have seen dramatic improvements in the performance of kesterite devices. The existence of devices of comparable performance, made by a number of different techniques, provides some new perspective on what characteristics are likely fundamental to the material. Here, we review progress in kesterite device fabrication, aspects of the film characteristics that have yet to be understood, and challenges in device development that remain for kesterites to contribute significantly to photovoltaic manufacturing. Performance goals, as well as characteristics of midgap defect density, free carrier density, surfaces, grain boundaries, grain-to-grain uniformity, and bandgap alloying are discussed.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81058721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Structural analysis of longitudinal Si-C-N precipitates in multicrystalline silicon 多晶硅中Si-C-N纵向沉淀的结构分析
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656754
S. Kostner, A. Hahnel, R. Mokso, H. Blumtritt, P. Werner
During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments.We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. A detailed transmission electron microscopy analysis and a quantitative electron energy loss spectroscopy analysis are presented, based on tomography-assisted target preparation.
在多晶硅结晶过程中,富碳的液固相边界层出现,导致n型导电Si-C-N细丝的析出。我们提出了一个深入的结构分析不同类型的细丝,以支持其生长的建模。相对比显微断层扫描低至亚微米水平,用于研究形态和沉淀的播种,同时仍然嵌入在功能齐全的太阳能电池样品中。详细的透射电镜分析和定量的电子能量损失谱分析,提出了基于层析辅助靶制备。
{"title":"Structural analysis of longitudinal Si-C-N precipitates in multicrystalline silicon","authors":"S. Kostner, A. Hahnel, R. Mokso, H. Blumtritt, P. Werner","doi":"10.1109/pvsc-vol2.2013.6656754","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656754","url":null,"abstract":"During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments.We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. A detailed transmission electron microscopy analysis and a quantitative electron energy loss spectroscopy analysis are presented, based on tomography-assisted target preparation.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89317255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accelerated aging and contact degradation of CIGS solar cells CIGS太阳能电池的加速老化和接触退化
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656770
T. Ott, T. Walter, D. Hariskos, O. Kiowski, R. Schaffler
The long-term stability of solar cells is a crucial factor for the competitiveness of a technology. In this study, the accelerated aging of CIGS solar cells was studied, and the influence of an applied bias during the endurance test on the open-circuit voltage Voc and fill factor (FF) was investigated. Time constants for parameter drifts of the open-circuit voltage and the associated activation energy were determined. The observed parameter drifts will be discussed, and a model will be proposed based on SCAPS simulations, explaining the observed behavior of the electrical characteristics of the solar cells. Therefore, cells were dark annealed under dry conditions at two different temperatures and different voltage biases were applied to the cells. Our study revealed that the application of a positive bias, which is similar to light soaking, first leads to an improvement and stabilization of the open-circuit voltage and FF followed by a slow decrease of these parameters. This long-term decrease can be explained in terms of a back barrier or phototransistor, as simulated with SCAPS. However, applying a positive bias enhances the long-term stability of these devices. The appearance of a back barrier is associated with a time constant exceeding 30 years. Therefore, this degradation mechanism is not critical.
太阳能电池的长期稳定性是一项技术竞争力的关键因素。本文研究了CIGS太阳能电池的加速老化问题,并研究了耐久试验中施加偏压对开路电压Voc和填充因子(FF)的影响。确定了开路电压参数漂移的时间常数和相应的活化能。将讨论观测到的参数漂移,并提出一个基于SCAPS模拟的模型,解释太阳能电池电特性的观测行为。因此,在两种不同温度的干燥条件下对电池进行暗退火,并对电池施加不同的电压偏差。我们的研究表明,应用类似于光浸泡的正偏置,首先导致开路电压和FF的改善和稳定,然后这些参数缓慢下降。这种长期的下降可以用背势垒或光电晶体管来解释,用SCAPS进行模拟。然而,施加正偏压可以增强这些器件的长期稳定性。后屏障的出现与超过30年的时间常数有关。因此,这种退化机制并不重要。
{"title":"Accelerated aging and contact degradation of CIGS solar cells","authors":"T. Ott, T. Walter, D. Hariskos, O. Kiowski, R. Schaffler","doi":"10.1109/pvsc-vol2.2012.6656770","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2012.6656770","url":null,"abstract":"The long-term stability of solar cells is a crucial factor for the competitiveness of a technology. In this study, the accelerated aging of CIGS solar cells was studied, and the influence of an applied bias during the endurance test on the open-circuit voltage Voc and fill factor (FF) was investigated. Time constants for parameter drifts of the open-circuit voltage and the associated activation energy were determined. The observed parameter drifts will be discussed, and a model will be proposed based on SCAPS simulations, explaining the observed behavior of the electrical characteristics of the solar cells. Therefore, cells were dark annealed under dry conditions at two different temperatures and different voltage biases were applied to the cells. Our study revealed that the application of a positive bias, which is similar to light soaking, first leads to an improvement and stabilization of the open-circuit voltage and FF followed by a slow decrease of these parameters. This long-term decrease can be explained in terms of a back barrier or phototransistor, as simulated with SCAPS. However, applying a positive bias enhances the long-term stability of these devices. The appearance of a back barrier is associated with a time constant exceeding 30 years. Therefore, this degradation mechanism is not critical.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91145414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of cell performance of ZnS(O,OH)/CIGS solar cells with UV-assisted MOCVD-ZnO:B and sputter-deposited ZnO:Al window layers 紫外辅助MOCVD-ZnO:B和溅射沉积ZnO:Al窗口层ZnS(O,OH)/CIGS太阳能电池性能的比较
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656753
Taizou Kobayashi, K. Yamauchi, T. Nakada
ZnO:B films deposited by ultraviolet light-assisted metal organic chemical vapor deposition (UM-ZnO:B) were applied to CBD-ZnS(O,OH)/CIGS solar cells in order to eliminate plasma damages during the subsequent ZnO sputtering. It was verified that the conversion efficiency of CIGS solar cells with a UM-ZnO:B window layer was higher than that of the device with a sputter-deposited(Sp-) ZnO:Al window layer; in both cases, thick (120 nm) and thin (10 nm) ZnS(O,OH) buffer layers were used. The conversion efficiency of CIGS solar cell was improved from 16.3% to 17.5% upon replacement of the Sp-ZnO:Al by a UM-ZnO:B window layer when the thick ZnS(O,OH) (120nm) buffer layer was used. Notably, the conversion efficiency was remarkably improved from 0.2% to 15.6% by the replacement of the window layer even when the ultra thin ZnS(O,OH) (10nm) buffer layer was used. The temperature dependence of open-circuit voltage revealed that interface recombination decreased owing to the use of a UM-ZnO: B window layer.
将紫外光辅助金属有机化学气相沉积法(UM-ZnO:B)制备的ZnO:B薄膜应用于CBD-ZnS(O,OH)/CIGS太阳能电池,以消除后续ZnO溅射过程中的等离子体损伤。验证了UM-ZnO:B窗口层的CIGS太阳能电池的转换效率高于溅射沉积(Sp-) ZnO:Al窗口层的器件;在这两种情况下,都使用了厚(120 nm)和薄(10 nm)的ZnS(O,OH)缓冲层。采用厚ZnS(O,OH) (120nm)缓冲层,用UM-ZnO:B窗口层替代Sp-ZnO:Al后,CIGS太阳能电池的转换效率从16.3%提高到17.5%。值得注意的是,即使使用超薄ZnS(O,OH) (10nm)缓冲层,通过更换窗口层,转换效率也从0.2%显著提高到15.6%。开路电压的温度依赖性表明,UM-ZnO: B窗口层的使用减少了界面复合。
{"title":"Comparison of cell performance of ZnS(O,OH)/CIGS solar cells with UV-assisted MOCVD-ZnO:B and sputter-deposited ZnO:Al window layers","authors":"Taizou Kobayashi, K. Yamauchi, T. Nakada","doi":"10.1109/pvsc-vol2.2013.6656753","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656753","url":null,"abstract":"ZnO:B films deposited by ultraviolet light-assisted metal organic chemical vapor deposition (UM-ZnO:B) were applied to CBD-ZnS(O,OH)/CIGS solar cells in order to eliminate plasma damages during the subsequent ZnO sputtering. It was verified that the conversion efficiency of CIGS solar cells with a UM-ZnO:B window layer was higher than that of the device with a sputter-deposited(Sp-) ZnO:Al window layer; in both cases, thick (120 nm) and thin (10 nm) ZnS(O,OH) buffer layers were used. The conversion efficiency of CIGS solar cell was improved from 16.3% to 17.5% upon replacement of the Sp-ZnO:Al by a UM-ZnO:B window layer when the thick ZnS(O,OH) (120nm) buffer layer was used. Notably, the conversion efficiency was remarkably improved from 0.2% to 15.6% by the replacement of the window layer even when the ultra thin ZnS(O,OH) (10nm) buffer layer was used. The temperature dependence of open-circuit voltage revealed that interface recombination decreased owing to the use of a UM-ZnO: B window layer.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89220910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Process control of reactive sputter deposition of AlOx and improved surface passivation of crystalline silicon 反应溅射沉积AlOx的工艺控制及改善晶体硅表面钝化
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656799
Xinyu Zhang, A. Cuevas, A. Thomson
In this paper, we investigate the relationship between the deposition-process parameters of reactively sputtered aluminium oxide films and the passivation of silicon surfaces. A method of tuning the deposition process has been established that results in a reduced level of surface recombination, where surface recombination velocities as low as 8.5 cm/s have been achieved on 1 Ω·cm n-type monocrystalline silicon. We find that in order to achieve good surface passivation, the deposition need to be conducted at low power density and at high deposition pressure. We have found that effective passivation is achieved when a sputtering target is close to being fully oxidized—indicated by deposition rate—likely resulting in films that are less aluminium rich. Additionally, Fourier-transform-infrared spectroscopy measurements were used for film characterization; the correlation between effective lifetime and the integrated absorption of all Al and O related bonds shows that films with lower absorption in the wavenumber range 500–1060 cm−1 result in better passivation.
本文研究了反应溅射氧化铝薄膜的沉积工艺参数与硅表面钝化的关系。已经建立了一种调整沉积过程的方法,可以降低表面复合的水平,其中在1 Ω·cm n型单晶硅上的表面复合速度低至8.5 cm/s。我们发现,为了获得良好的表面钝化效果,沉积需要在低功率密度和高沉积压力下进行。我们发现,当溅射靶接近完全氧化时(由沉积速率表明),有效的钝化是可以实现的,这可能导致膜的铝含量较低。此外,傅里叶变换红外光谱测量用于薄膜表征;有效寿命与所有Al和O相关键的综合吸收之间的相关性表明,在波数500-1060 cm−1范围内,吸收较低的膜具有较好的钝化效果。
{"title":"Process control of reactive sputter deposition of AlOx and improved surface passivation of crystalline silicon","authors":"Xinyu Zhang, A. Cuevas, A. Thomson","doi":"10.1109/pvsc-vol2.2013.6656799","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656799","url":null,"abstract":"In this paper, we investigate the relationship between the deposition-process parameters of reactively sputtered aluminium oxide films and the passivation of silicon surfaces. A method of tuning the deposition process has been established that results in a reduced level of surface recombination, where surface recombination velocities as low as 8.5 cm/s have been achieved on 1 Ω·cm n-type monocrystalline silicon. We find that in order to achieve good surface passivation, the deposition need to be conducted at low power density and at high deposition pressure. We have found that effective passivation is achieved when a sputtering target is close to being fully oxidized—indicated by deposition rate—likely resulting in films that are less aluminium rich. Additionally, Fourier-transform-infrared spectroscopy measurements were used for film characterization; the correlation between effective lifetime and the integrated absorption of all Al and O related bonds shows that films with lower absorption in the wavenumber range 500–1060 cm−1 result in better passivation.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77605403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A new methodology for calculating the efficiency of multi-junction solar cells 一种计算多结太阳能电池效率的新方法
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2013.6656707
Z. R. Abrams
The future of high efficiency photovoltaics lies in better utilizing the full solar spectrum. Spectrally splitting the solar input either by using stacked multi-junctions or advanced photonic redistribution of the light into different cell segments can approach theoretical conversion limits. However, while the algorithm for calculating the efficiency for these systems is considered to be definitive, a careful examination of some of the fundamental parameters shows that there are crucial aspects to the calculation that have been overlooked. By recognizing a new set of parameters such as the limited bandwidth of light absorbed in each cell, the non-radiative losses of each segment, and the photon management of incoming and outgoing light, a new approach to the calculation can be obtained. Here, we provide a blueprint for this calculation stemming from the perspective of Information Theory, and its association with the efficiency of solar cells via the relationship between the Entropy of the photons and the Open-Circuit Voltage of a cell. We list these important parameters, and how they relate to the overall efficiency, in a simple, elegant manner. Using these concepts we show how to compensate for these inherent losses by modifying the effective area of each cell segment.
高效光伏的未来在于更好地利用全太阳光谱。通过使用堆叠的多结或将光的先进光子重新分配到不同的电池段,在光谱上分裂太阳能输入可以接近理论转换极限。然而,虽然计算这些系统效率的算法被认为是确定的,但对一些基本参数的仔细检查表明,计算的关键方面被忽视了。通过识别每个单元吸收光的有限带宽、每个单元的非辐射损耗以及入射光和出射光的光子管理等参数,可以获得一种新的计算方法。在这里,我们从信息论的角度为这种计算提供了一个蓝图,并通过光子熵和电池开路电压之间的关系,将其与太阳能电池的效率联系起来。我们以一种简单、优雅的方式列出了这些重要的参数,以及它们与整体效率的关系。使用这些概念,我们展示了如何通过修改每个单元段的有效面积来补偿这些固有的损失。
{"title":"A new methodology for calculating the efficiency of multi-junction solar cells","authors":"Z. R. Abrams","doi":"10.1109/pvsc-vol2.2013.6656707","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2013.6656707","url":null,"abstract":"The future of high efficiency photovoltaics lies in better utilizing the full solar spectrum. Spectrally splitting the solar input either by using stacked multi-junctions or advanced photonic redistribution of the light into different cell segments can approach theoretical conversion limits. However, while the algorithm for calculating the efficiency for these systems is considered to be definitive, a careful examination of some of the fundamental parameters shows that there are crucial aspects to the calculation that have been overlooked. By recognizing a new set of parameters such as the limited bandwidth of light absorbed in each cell, the non-radiative losses of each segment, and the photon management of incoming and outgoing light, a new approach to the calculation can be obtained. Here, we provide a blueprint for this calculation stemming from the perspective of Information Theory, and its association with the efficiency of solar cells via the relationship between the Entropy of the photons and the Open-Circuit Voltage of a cell. We list these important parameters, and how they relate to the overall efficiency, in a simple, elegant manner. Using these concepts we show how to compensate for these inherent losses by modifying the effective area of each cell segment.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75811935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analyzing and simulating the reduction in PV powerplant variability due to geographic smoothing in Ota City, Japan and Alamosa, CO 分析和模拟了日本太田市和科罗拉多州阿拉莫萨由于地理平滑而减少的光伏电站可变性
Pub Date : 2013-01-01 DOI: 10.1109/pvsc-vol2.2012.6656719
M. Lave, J. Stein, A. Ellis
Ota City, Japan and Alamosa, Colorado present contrasting cases of a small rooftop distributed PV plant versus a large central PV plant. We examine the effect of geographic smoothing on the power output of each plant. 1-second relative maximum ramp rates are found to be reduced 6–10 times for the total plant output versus a single point sensor, though smaller reductions are seen at longer timescales. The relative variability is found to decay exponentially at all timescales as additional houses or inverters are aggregated. The rate of decay depends on both the geographic diversity within the plant and the meteorological conditions (such as cloud speed) on a given day. The Wavelet Variability Model (WVM) takes into account these geographic smoothing effects to produce simulated PV powerplant output by using a point sensor as input. The WVM is tested against Ota City and Alamosa, and the WVM simulation closely matches the distribution of ramp rates of actual power output.
日本的太田市和科罗拉多州的阿拉莫萨展示了小型屋顶分布式光伏电站和大型中央光伏电站的对比案例。我们检验了地理平滑对每个电厂输出功率的影响。与单点传感器相比,1秒相对最大斜坡速率减少了6-10倍,尽管在更长的时间尺度上可以看到较小的减少。当额外的房屋或逆变器加在一起时,发现相对变率在所有时间尺度上呈指数衰减。腐烂的速度取决于植物内部的地理多样性和某一天的气象条件(如云速)。小波变率模型(WVM)考虑了这些地理平滑效应,以点传感器作为输入产生模拟的光伏电站输出。WVM对Ota City和Alamosa进行了测试,WVM模拟与实际功率输出的斜坡率分布非常匹配。
{"title":"Analyzing and simulating the reduction in PV powerplant variability due to geographic smoothing in Ota City, Japan and Alamosa, CO","authors":"M. Lave, J. Stein, A. Ellis","doi":"10.1109/pvsc-vol2.2012.6656719","DOIUrl":"https://doi.org/10.1109/pvsc-vol2.2012.6656719","url":null,"abstract":"Ota City, Japan and Alamosa, Colorado present contrasting cases of a small rooftop distributed PV plant versus a large central PV plant. We examine the effect of geographic smoothing on the power output of each plant. 1-second relative maximum ramp rates are found to be reduced 6–10 times for the total plant output versus a single point sensor, though smaller reductions are seen at longer timescales. The relative variability is found to decay exponentially at all timescales as additional houses or inverters are aggregated. The rate of decay depends on both the geographic diversity within the plant and the meteorological conditions (such as cloud speed) on a given day. The Wavelet Variability Model (WVM) takes into account these geographic smoothing effects to produce simulated PV powerplant output by using a point sensor as input. The WVM is tested against Ota City and Alamosa, and the WVM simulation closely matches the distribution of ramp rates of actual power output.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83426228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress 系统电压应力退化的晶体硅光伏组件寿命预测测试与分析
Pub Date : 2013-01-01 DOI: 10.1109/PVSC.2012.6317933
P. Hacke, Ryan M. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz
Acceleration factors are calculated for crystalline silicon photovoltaic modules under system voltage stress by comparing the module power during degradation outdoors with that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data, considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in situ of the test chamber, dark I–V measurements are obtained and transformed using superposition, which is found to be well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared with those stressed in accelerated tests.
通过对比三种温度和85%相对湿度下的组件在室外退化和加速测试时的功率,计算了系统电压应力下晶体硅光伏组件的加速系数。考虑到在初始模块功率的80%时失效,对加速寿命测试数据应用对数正态分析。在恒定相对湿度条件下,确定了模组失效率的激活能为0.73 eV,并预测了模组在任意温度下的失效概率。为了获得多个模块在测试室原位降解过程中的统计数据,使用叠加法获得暗I-V测量值并进行转换,发现该方法非常适合于对潜在诱导降解进行快速定量评估。可以确定的是,单独的并联电阻测量不能代表功率退化的程度。这是用一个双二极管模型分析来解释的,该分析显示,随着模块功率的下降,第二二极管的复合电流和理想因数也在增加。研究了构件在室外受力时的破坏模式,并与加速试验时的破坏模式进行了比较。
{"title":"Testing and analysis for lifetime prediction of crystalline silicon PV modules undergoing degradation by system voltage stress","authors":"P. Hacke, Ryan M. Smith, K. Terwilliger, S. Glick, D. Jordan, S. Johnston, M. Kempe, S. Kurtz","doi":"10.1109/PVSC.2012.6317933","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317933","url":null,"abstract":"Acceleration factors are calculated for crystalline silicon photovoltaic modules under system voltage stress by comparing the module power during degradation outdoors with that in accelerated testing at three temperatures and 85% relative humidity. A lognormal analysis is applied to the accelerated lifetime test data, considering failure at 80% of the initial module power. Activation energy of 0.73 eV for the rate of failure is determined for the chamber testing at constant relative humidity, and the probability of module failure at an arbitrary temperature is predicted. To obtain statistical data for multiple modules over the course of degradation in situ of the test chamber, dark I–V measurements are obtained and transformed using superposition, which is found to be well suited for rapid and quantitative evaluation of potential-induced degradation. It is determined that shunt resistance measurements alone do not represent the extent of power degradation. This is explained with a two-diode model analysis that shows an increasing second diode recombination current and ideality factor as the degradation in module power progresses. Failure modes of the modules stressed outdoors are examined and compared with those stressed in accelerated tests.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76164901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 58
期刊
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1