Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614176
I. Cesar, E. Granneman, P. Vermont, E. Tois, P. Manshanden, L. J. Geerligs, E. Bende, A. Burgers, A. Mewe, Y. Komatsu, A. Weeber
Current bottlenecks for industrialization of Al2O3 deposited by Atomic Layer Deposition (ALD) for crystalline silicon solar cell applications are low growth rate and stability of thin and uncapped layers during co-firing. First results on the performance of a high throughput ALD proto-type, the Levitrack, are presented. Excellent passivation properties have been obtained after firing, for 12 nm thick films deposited on p-Cz (2.3 Ω.cm) with Seff <15cm/s (Δn=3×1015 cm−3). These layers are compatible with solar cells that operate at a maximum open-circuit voltage of 720mV. Furthermore, we report on the passivation of 20nm uncapped aluminum oxide layers on the rear of p-type mc-Si bifacial cells. LBIC measurements unveiled excellent passivation properties on areas covered by 20nm of Al2O3 characterized by an IQE of 91% at 980nm. Remarkably, these lifetime and cell results were obtained without lengthy post-treatments like forming gas anneal.
{"title":"Excellent rear side passivation on multi-crystalline silicon solar cells with 20 nm uncapped Al2O3 layer: Industrialization of ALD for solar cell applications","authors":"I. Cesar, E. Granneman, P. Vermont, E. Tois, P. Manshanden, L. J. Geerligs, E. Bende, A. Burgers, A. Mewe, Y. Komatsu, A. Weeber","doi":"10.1109/PVSC.2010.5614176","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614176","url":null,"abstract":"Current bottlenecks for industrialization of Al2O3 deposited by Atomic Layer Deposition (ALD) for crystalline silicon solar cell applications are low growth rate and stability of thin and uncapped layers during co-firing. First results on the performance of a high throughput ALD proto-type, the Levitrack, are presented. Excellent passivation properties have been obtained after firing, for 12 nm thick films deposited on p-Cz (2.3 Ω.cm) with Seff <15cm/s (Δn=3×1015 cm−3). These layers are compatible with solar cells that operate at a maximum open-circuit voltage of 720mV. Furthermore, we report on the passivation of 20nm uncapped aluminum oxide layers on the rear of p-type mc-Si bifacial cells. LBIC measurements unveiled excellent passivation properties on areas covered by 20nm of Al2O3 characterized by an IQE of 91% at 980nm. Remarkably, these lifetime and cell results were obtained without lengthy post-treatments like forming gas anneal.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"25 1","pages":"000044-000049"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81232345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614544
C. Chang, M. Hsu, W. Chang, W. Sun, C. W. Wu, P. Yu
In the research of photovoltaic devices, eliminating Fresnel reflection loss is a critical issue on the way to pursue higher efficiency. To maximize the power conversion efficiency, dielectric antireflective coating shows a cost-effective approach, but not enough to absorb broadband solar radiation effectively. Recently, the functional nanostructure shows high potential to be an omnidirectional antireflective coating for the photovoltaic devices. Here we demonstrate Indium-Tin-Oxide (ITO) nano-whiskers, grown by the self-catalyst vapor-liquid-solid (VLS) mechanisms on the textured Si substrate. The ITO nano-whiskers can provide broadband anti-reflective properties (R<5%) in the wavelength range of 350–1100nm. In comparison with conventional Si solar cell, the ITO nano-whiskers coating solar cell shows higher external quantum efficiency (EQE) in the range of 700–1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). The angular response of the conversion efficiency also increases from 7% at the normal incidence to more than 15% for incident angles over 70°.
{"title":"Enhanced angular response of power conversion efficiency for silicon solar cells utilizing a uniformly distributed nano-whisker medium","authors":"C. Chang, M. Hsu, W. Chang, W. Sun, C. W. Wu, P. Yu","doi":"10.1109/PVSC.2010.5614544","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614544","url":null,"abstract":"In the research of photovoltaic devices, eliminating Fresnel reflection loss is a critical issue on the way to pursue higher efficiency. To maximize the power conversion efficiency, dielectric antireflective coating shows a cost-effective approach, but not enough to absorb broadband solar radiation effectively. Recently, the functional nanostructure shows high potential to be an omnidirectional antireflective coating for the photovoltaic devices. Here we demonstrate Indium-Tin-Oxide (ITO) nano-whiskers, grown by the self-catalyst vapor-liquid-solid (VLS) mechanisms on the textured Si substrate. The ITO nano-whiskers can provide broadband anti-reflective properties (R<5%) in the wavelength range of 350–1100nm. In comparison with conventional Si solar cell, the ITO nano-whiskers coating solar cell shows higher external quantum efficiency (EQE) in the range of 700–1100nm. Moreover, the ITO nano-whisker coating Si solar cell shows a high total efficiency increase of 1.1% (from 16.08% to17.18%). The angular response of the conversion efficiency also increases from 7% at the normal incidence to more than 15% for incident angles over 70°.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"23 1","pages":"003109-003111"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81244254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614252
M. Bivour, C. Meinhardt, D. Pysch, C. Reichel, Kurt-Ulrich Ritzau, M. Hermle, S. Glunz
We present the first silicon solar cells processed at Fraunhofer ISE featuring an amorphous/crystalline silicon heterojunction rear emitter and a diffused front surface field. In this work, we focus on the optimization of the silicon heterojunction rear emitter of n-type silicon solar cells with regards to the intrinsic hydrogenated amorphous silicon a-Si:H(i) and boron-doped hydrogenated amorphous silicon a-Si:H(p) layer thickness and the influence of a transparent conducting oxide layer on the rear emitter surface. Efficiencies up to 19.1 % (Voc = 687 mV, Jsc = 34.9 mA/cm2, FF = 79.9%) have been reached for non-textured solar cells on n-type absorbers. Furthermore, we attained an efficiency of 19.8% on textured p-type absorbers featuring an amorphous/crystalline silicon heterojunction rear emitter.
{"title":"n-type silicon solar cells with amorphous/crystalline silicon heterojunction rear emitter","authors":"M. Bivour, C. Meinhardt, D. Pysch, C. Reichel, Kurt-Ulrich Ritzau, M. Hermle, S. Glunz","doi":"10.1109/PVSC.2010.5614252","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614252","url":null,"abstract":"We present the first silicon solar cells processed at Fraunhofer ISE featuring an amorphous/crystalline silicon heterojunction rear emitter and a diffused front surface field. In this work, we focus on the optimization of the silicon heterojunction rear emitter of n-type silicon solar cells with regards to the intrinsic hydrogenated amorphous silicon a-Si:H(i) and boron-doped hydrogenated amorphous silicon a-Si:H(p) layer thickness and the influence of a transparent conducting oxide layer on the rear emitter surface. Efficiencies up to 19.1 % (Voc = 687 mV, Jsc = 34.9 mA/cm2, FF = 79.9%) have been reached for non-textured solar cells on n-type absorbers. Furthermore, we attained an efficiency of 19.8% on textured p-type absorbers featuring an amorphous/crystalline silicon heterojunction rear emitter.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"95 1","pages":"001304-001308"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83583169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614390
K. Hara, Takuji Takahashi
Nonradiative recombination of photocarriers around grain boundaries is important property in multicrystalline silicon material, and has been investigated through local photothermal (PT) measurements by atomic force microscopy. We found that the PT signal was apparently enhanced near the grain boundary, which is probably due to fast nonradiative recombination at the boundary. In addition, relationship between the dependence of PT signal on incident photon energy and the minority carrier diffusion length is discussed.
{"title":"Photothermal characterrization by atomic force microscopy around grain boundary in multicrystalline silicon material","authors":"K. Hara, Takuji Takahashi","doi":"10.1109/PVSC.2010.5614390","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614390","url":null,"abstract":"Nonradiative recombination of photocarriers around grain boundaries is important property in multicrystalline silicon material, and has been investigated through local photothermal (PT) measurements by atomic force microscopy. We found that the PT signal was apparently enhanced near the grain boundary, which is probably due to fast nonradiative recombination at the boundary. In addition, relationship between the dependence of PT signal on incident photon energy and the minority carrier diffusion length is discussed.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"12 1","pages":"001387-001389"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83569349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614522
J. Boisvert, D. Law, R. King, D. Bhusari, X. Liu, A. Zakaria, W. Hong, S. Mesropian, D. Larrabee, R. Woo, A. Boca, K. Edmondson, D. Krut, D. Peterson, K. Rouhani, B. Benedikt, N. Karam
High efficiency multi-junction solar cells utilizing inverted metamorphic1,2 and semiconductor bonding technology3 are being developed at Spectrolab for use in one-sun space and near-space applications. Recently that effort has been extended to include low-concentration space applications. This paper will review the present state-of-the-art cell technologies at Spectrolab, with an emphasis on performance characterization data at both 1-sun and low-concentration operating conditions that these cells will experience in flight‥ A cell coupon utilizing IMM solar cells has been assembled and subjected to thermal cycling. Pre-and post thermal cycling data have been collected and there is no performance degradation or mechanical issues after the test.
{"title":"Development of advanced space solar cells at Spectrolab","authors":"J. Boisvert, D. Law, R. King, D. Bhusari, X. Liu, A. Zakaria, W. Hong, S. Mesropian, D. Larrabee, R. Woo, A. Boca, K. Edmondson, D. Krut, D. Peterson, K. Rouhani, B. Benedikt, N. Karam","doi":"10.1109/PVSC.2010.5614522","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614522","url":null,"abstract":"High efficiency multi-junction solar cells utilizing inverted metamorphic1,2 and semiconductor bonding technology3 are being developed at Spectrolab for use in one-sun space and near-space applications. Recently that effort has been extended to include low-concentration space applications. This paper will review the present state-of-the-art cell technologies at Spectrolab, with an emphasis on performance characterization data at both 1-sun and low-concentration operating conditions that these cells will experience in flight‥ A cell coupon utilizing IMM solar cells has been assembled and subjected to thermal cycling. Pre-and post thermal cycling data have been collected and there is no performance degradation or mechanical issues after the test.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"000123-000127"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82978532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617104
S. Busquet, J. Torres, M. Dubarry, M. Ewan, B. Liaw, L. Cutshaw, R. Rocheleau
Hawaii is experiencing a substantial increase in grid-tied PV installations and utility companies are concerned with the resulting grid management issues. To address these concerns and to enable the utilities to make informed decisions, the Hawaii Natural Energy Institute (HNEI) of the University of Hawaii initiated a PV test program that provides high-resolution data to characterize module and array performance under a variety of local climatic conditions. In the first phase of the project HNEI developed a PV test bed located at Pu'u Wa'a Wa'a ranch on the Kona coast of the Big Island of Hawaii. Initially we selected seven different PV technologies for testing consisting of poly-crystalline, mono-crystalline, amorphous, and mixed technologies. The test modules comprise 200 W units, tilted at 20°, with maximum power point trackers, via small inverters connected to the grid or via charge controllers connected to a battery and load bank. The data is sampled at 1 Hz and stored in a database for visualization and analysis. This paper presents a description of the test bed design, the high data rate Data Acquisition System (DAS), and initial experimental results.
{"title":"Comparison of photovoltaic module performance at Pu'u Wa'a Wa'a","authors":"S. Busquet, J. Torres, M. Dubarry, M. Ewan, B. Liaw, L. Cutshaw, R. Rocheleau","doi":"10.1109/PVSC.2010.5617104","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617104","url":null,"abstract":"Hawaii is experiencing a substantial increase in grid-tied PV installations and utility companies are concerned with the resulting grid management issues. To address these concerns and to enable the utilities to make informed decisions, the Hawaii Natural Energy Institute (HNEI) of the University of Hawaii initiated a PV test program that provides high-resolution data to characterize module and array performance under a variety of local climatic conditions. In the first phase of the project HNEI developed a PV test bed located at Pu'u Wa'a Wa'a ranch on the Kona coast of the Big Island of Hawaii. Initially we selected seven different PV technologies for testing consisting of poly-crystalline, mono-crystalline, amorphous, and mixed technologies. The test modules comprise 200 W units, tilted at 20°, with maximum power point trackers, via small inverters connected to the grid or via charge controllers connected to a battery and load bank. The data is sampled at 1 Hz and stored in a database for visualization and analysis. This paper presents a description of the test bed design, the high data rate Data Acquisition System (DAS), and initial experimental results.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"54 1","pages":"002666-002671"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85431107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614172
M. Yamaguchi, Hidetoshi Suzuki, Y. Ohshita, N. Kojima, T. Takamoto
III–V compound multi-junction solar cells have great potential for space and terrestrial applications because they have high efficiency potential of more than 50% and superior radiation-resistance. We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program started since FY2008. This paper presents our new achievements in super high-efficiency multi-junction and concentrator solar cells. We have obtained promising results: 1) 35.8% efficiency InGaP/GaAs/InGaAs 3-junction cells, 2) high quality (In)GaAsN material with higher mobility by chemical beam epitaxy compared to those grown by the other growth methods.
{"title":"Recent R&D topics on concentrator multi-junction solar cells and materials under innovative solar cells's project","authors":"M. Yamaguchi, Hidetoshi Suzuki, Y. Ohshita, N. Kojima, T. Takamoto","doi":"10.1109/PVSC.2010.5614172","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614172","url":null,"abstract":"III–V compound multi-junction solar cells have great potential for space and terrestrial applications because they have high efficiency potential of more than 50% and superior radiation-resistance. We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R&D program started since FY2008. This paper presents our new achievements in super high-efficiency multi-junction and concentrator solar cells. We have obtained promising results: 1) 35.8% efficiency InGaP/GaAs/InGaAs 3-junction cells, 2) high quality (In)GaAsN material with higher mobility by chemical beam epitaxy compared to those grown by the other growth methods.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"8 1","pages":"001237-001242"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85824339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614381
T. Fuyuki, A. Tani, Sinichiro Tsujii, E. Sugimura
By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.
{"title":"Photographic distinction of defects in polycrystalline Si by spectroscopic electroluminescence","authors":"T. Fuyuki, A. Tani, Sinichiro Tsujii, E. Sugimura","doi":"10.1109/PVSC.2010.5614381","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614381","url":null,"abstract":"By using spectroscopic EL imaging technique, the intrinsic defects and the extrinsic deficiencies can be distinguished clearly at a glance. The intrinsic defects with deep traps induce infra-red emission depending on the electronic trap level. By comparing the filtered images, extrinsic defects which may cause serious effect on long term reliability can be detected photographically.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"001380-001382"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85840447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616892
M. Hörteis, J. Benick, J. Nekarda, A. Richter, R. Preu, S. Glunz
The contact formation on high efficiency solar cells using a high temperature process is the subject of this research. The chemical reactions between ink components and solar cell during the contact firing process are studied in detail by thermal gravimetric - differential thermo analysis. The mechanism behind the etching process and the opening of the dielectric layer are explained and the impact of the glass frit is investigated. Based on these studies, a seed layer ink was developed, optimized and tested on silicon solar cells. The developed ink was applied on high efficiency solar cells with printed front and rear contacts. At the rear side, we used a firing stable passivation layer consisting of Al2O3 and SiNx, which additionally resists the reactive compounds of the screen printed Al-paste. After applying laser fired contacts at the rear and light induced silver plating at the front, cell efficiencies of η = 21% and fill factors of 81% could be measured.
{"title":"Fundamental studies on the front contact formation resulting in a 21% efficiency silicon solar cell with printed rear and front contacts","authors":"M. Hörteis, J. Benick, J. Nekarda, A. Richter, R. Preu, S. Glunz","doi":"10.1109/PVSC.2010.5616892","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616892","url":null,"abstract":"The contact formation on high efficiency solar cells using a high temperature process is the subject of this research. The chemical reactions between ink components and solar cell during the contact firing process are studied in detail by thermal gravimetric - differential thermo analysis. The mechanism behind the etching process and the opening of the dielectric layer are explained and the impact of the glass frit is investigated. Based on these studies, a seed layer ink was developed, optimized and tested on silicon solar cells. The developed ink was applied on high efficiency solar cells with printed front and rear contacts. At the rear side, we used a firing stable passivation layer consisting of Al2O3 and SiNx, which additionally resists the reactive compounds of the screen printed Al-paste. After applying laser fired contacts at the rear and light induced silver plating at the front, cell efficiencies of η = 21% and fill factors of 81% could be measured.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"13 1","pages":"000672-000677"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84024725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616926
M. Adachi, K. Karim
Silicon nanowires have been shown to have strong light trapping properties making them a promising photovoltaic material. In this study, silicon nanowires, grown by RF plasma enhanced chemical vapor deposition (PECVD), are incorporated as the absorbing layer in n-i-p solar cells. Silicon nanowires are fabricated at a temperature of 375 °C by Vapor Liquid Solid (VLS) method. Nanowire solar cells have an average specular reflectance of 6.3% as compared to 22.6% for the thin film amorphous silicon (a-Si) device (over λ = 350 nm − 750 nm). Similarly the average diffuse reflectance of the nanowire devices is 4.9% as compared to 9.4% for the thin film a-Si device. External quantum efficiency measurements indicate the largest contributor to collection efficiency losses is from the catalyst impurity used for nanowire growth.
{"title":"Fabrication of PECVD grown n-i-p silicon nanowire solar cells","authors":"M. Adachi, K. Karim","doi":"10.1109/PVSC.2010.5616926","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616926","url":null,"abstract":"Silicon nanowires have been shown to have strong light trapping properties making them a promising photovoltaic material. In this study, silicon nanowires, grown by RF plasma enhanced chemical vapor deposition (PECVD), are incorporated as the absorbing layer in n-i-p solar cells. Silicon nanowires are fabricated at a temperature of 375 °C by Vapor Liquid Solid (VLS) method. Nanowire solar cells have an average specular reflectance of 6.3% as compared to 22.6% for the thin film amorphous silicon (a-Si) device (over λ = 350 nm − 750 nm). Similarly the average diffuse reflectance of the nanowire devices is 4.9% as compared to 9.4% for the thin film a-Si device. External quantum efficiency measurements indicate the largest contributor to collection efficiency losses is from the catalyst impurity used for nanowire growth.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"47 1","pages":"003302-003305"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84079673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：