Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614510
D. Chumney, D. Aiken, B. Cho, A. Cornfeld, J. Diaz, V. Ley, J. Mittman, F. Newman, P. Sharps, M. Stan, T. Varghese
The triple-junction inverted-metamorphic (IMM-3) air-mass-zero (AM0) solar cell is a high-efficiency photovoltaic device with nearly optimized band-gaps for the solar spectrum. We discuss the path forward for a drop-in replacement of the conventional, 3J lattice-matched germanium based solar cell with an IMM-3 space solar cell. The IMM space solar cell can support several form factors, from flexible to rigid carriers, but a configuration similar to standard space solar cells could be quickly adopted into current panel configurations. The goal of the IMM development team has been to provide a stable processing platform that is also compatible with current solar panel configurations. The superstrate configuration has been the platform used for much of the IMM development to date. We discuss this form factor, as well as other alternatives to achieve a robust cell replacement form factor capable of successfully completing the AIAA-S111 space qualification.
{"title":"Path to a drop-in replacement for current technologies with the 33%, large area, IMM cell","authors":"D. Chumney, D. Aiken, B. Cho, A. Cornfeld, J. Diaz, V. Ley, J. Mittman, F. Newman, P. Sharps, M. Stan, T. Varghese","doi":"10.1109/PVSC.2010.5614510","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614510","url":null,"abstract":"The triple-junction inverted-metamorphic (IMM-3) air-mass-zero (AM0) solar cell is a high-efficiency photovoltaic device with nearly optimized band-gaps for the solar spectrum. We discuss the path forward for a drop-in replacement of the conventional, 3J lattice-matched germanium based solar cell with an IMM-3 space solar cell. The IMM space solar cell can support several form factors, from flexible to rigid carriers, but a configuration similar to standard space solar cells could be quickly adopted into current panel configurations. The goal of the IMM development team has been to provide a stable processing platform that is also compatible with current solar panel configurations. The superstrate configuration has been the platform used for much of the IMM development to date. We discuss this form factor, as well as other alternatives to achieve a robust cell replacement form factor capable of successfully completing the AIAA-S111 space qualification.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"188 1","pages":"000113-000116"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84145891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617190
D. Adkins
Simulation models are used for predicting a photovoltaic concentrator's performance. It is desirable to analyse theoretically any given system as extensively as possible before embarking on expensive construction.
{"title":"The validation and verification of CFD models of heat transfer and airflow within CPV modules","authors":"D. Adkins","doi":"10.1109/PVSC.2010.5617190","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617190","url":null,"abstract":"Simulation models are used for predicting a photovoltaic concentrator's performance. It is desirable to analyse theoretically any given system as extensively as possible before embarking on expensive construction.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"000827-000830"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78282448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615860
N. Tomlin, J. Lehman, K. Hurst, D. Tanner, K. Kamarás, Á. Pekker
We have demonstrated a novel method to determine optical properties of opaque or semi-transparent films for photovoltaic (PV) applications. Such films may be the basis of transparent conductors or photoconductive material. As an example, we measure the absolute absorptance (at visible and near infrared wavelengths) of an optically thick single-wall carbon nanotube (SWCNT) film by using a pyroelectric detector. This novel method obviates the need for analysis with respect to polarization and associated difficulties of ellipsometry. The Kramers-Kronig relation is used to determine the thick film index of refraction, which we use to calculate the optical properties of thin films as a function of thickness. A transmittance measurement obtained from a thin SWCNT film shows excellent agreement with results from our model.
{"title":"Method to determine the absorptance of thin films for photovoltaic technology","authors":"N. Tomlin, J. Lehman, K. Hurst, D. Tanner, K. Kamarás, Á. Pekker","doi":"10.1109/PVSC.2010.5615860","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615860","url":null,"abstract":"We have demonstrated a novel method to determine optical properties of opaque or semi-transparent films for photovoltaic (PV) applications. Such films may be the basis of transparent conductors or photoconductive material. As an example, we measure the absolute absorptance (at visible and near infrared wavelengths) of an optically thick single-wall carbon nanotube (SWCNT) film by using a pyroelectric detector. This novel method obviates the need for analysis with respect to polarization and associated difficulties of ellipsometry. The Kramers-Kronig relation is used to determine the thick film index of refraction, which we use to calculate the optical properties of thin films as a function of thickness. A transmittance measurement obtained from a thin SWCNT film shows excellent agreement with results from our model.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"136 1","pages":"001745-001748"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77466648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614609
D. Ferguson
One of the principal design drivers for space solar arrays is solar cell arcing into the plasma due to spacecraft charging. The amount of spacecraft charging and the resulting differential voltages on space solar cell edges and interconnects is related to the cell edge, interconnect and coverglass designs. For example, the International Space Station (ISS) did not charge up to expected levels because of its closely spaced solar cells, wrap-through interconnects, and coverglass overhangs, which serve to choke off electron collection and prevent the concomitant negative charging that would otherwise occur on its high voltage solar arrays.
{"title":"Space solar cell edge, interconnect, and coverglass designs and their effect on spacecraft charging and plasma interactions","authors":"D. Ferguson","doi":"10.1109/PVSC.2010.5614609","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614609","url":null,"abstract":"One of the principal design drivers for space solar arrays is solar cell arcing into the plasma due to spacecraft charging. The amount of spacecraft charging and the resulting differential voltages on space solar cell edges and interconnects is related to the cell edge, interconnect and coverglass designs. For example, the International Space Station (ISS) did not charge up to expected levels because of its closely spaced solar cells, wrap-through interconnects, and coverglass overhangs, which serve to choke off electron collection and prevent the concomitant negative charging that would otherwise occur on its high voltage solar arrays.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"178 1","pages":"002537-002542"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78014633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614513
B. Cho, R. Lutz, J. Pappan, E. Downard, A. Cornfeld, N. Fatemi, M. Stan, P. Sharps, C. Su, S. Billets, S. Gasner, A. Howard
In collaborations with both Lockheed-Martin (LM) and the Air Force Research Laboratory (AFRL), Emcore has incorporated its cutting-edge IMM cell technologies on MISSE-8 in a variety of cell form factors and two distinct configurations. The first is a double coverglass (DCG) arrangement, where adhesive and coverglass are attached to both the front and backsides of the solar cell, and in the second configuration the IMM cell was mounted to a rigid, lightweight, CTE-matched substrate. Pre-build test coupons were subjected to 1124 thermal cycles from −100 to 100°C, and showed no electrical degradation in six out of seven cells/strings, with the lone degraded cell exhibiting just a 3.5% loss in Jsc and no change in Voc or FF. The average AM0 efficiency (solar constant = 1353 W/m2) of the IMM3J cells flown in this experiment have an average efficiency of 31.3% (omitting an anomalously low-perfoming cell), and the 4cm2 IMM4J cells 33.1%.
{"title":"IMM experimentation in the next frontier: Emcore'S participation in the MISSE-8 program","authors":"B. Cho, R. Lutz, J. Pappan, E. Downard, A. Cornfeld, N. Fatemi, M. Stan, P. Sharps, C. Su, S. Billets, S. Gasner, A. Howard","doi":"10.1109/PVSC.2010.5614513","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614513","url":null,"abstract":"In collaborations with both Lockheed-Martin (LM) and the Air Force Research Laboratory (AFRL), Emcore has incorporated its cutting-edge IMM cell technologies on MISSE-8 in a variety of cell form factors and two distinct configurations. The first is a double coverglass (DCG) arrangement, where adhesive and coverglass are attached to both the front and backsides of the solar cell, and in the second configuration the IMM cell was mounted to a rigid, lightweight, CTE-matched substrate. Pre-build test coupons were subjected to 1124 thermal cycles from −100 to 100°C, and showed no electrical degradation in six out of seven cells/strings, with the lone degraded cell exhibiting just a 3.5% loss in Jsc and no change in Voc or FF. The average AM0 efficiency (solar constant = 1353 W/m2) of the IMM3J cells flown in this experiment have an average efficiency of 31.3% (omitting an anomalously low-perfoming cell), and the 4cm2 IMM4J cells 33.1%.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"316 1","pages":"000110-000112"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72841514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617003
S. G. Sandoval, M. Khizar, D. Modisette, J. Anderson, R. Manginell, N. Amin, K. Sopian, S. H. Zaidi
In Si solar cells, the cost of the Si wafer itself accounts for over 50 % of energy conversion; therefore, economic use of Si contributes significantly towards lowering cost. Thin-film (∼ 25 µm) crystalline Si (c-Si) solar cells films are ideally-suited for low-cost photovoltaics. These thin-film c-Si solar cells are manufactured through a wide range of industrial processes including epitaxial growth, smart-cut, and layer transfer. In these devices, weak optical absorption of Si fundamentally limits performance. Historically, several surface texturing mechanisms have evolved to enhance optical absorption in solar cells. Most of geometrical-optics based texturing mechanisms require etched features comparable to thin-film thickness. As a result, randomly-created subwavelength structures are finding increasing applications for reducing surface reflection as well as enhancing near IR absorption. We report on diffractive and physical optics mechanisms in enhancing absorption in thin Si films. Randomly-created subwavelength diffractive structures as well periodically-patterned deeply-etched subwavelength structures have been demonstrated to be highly effective in reducing reflection and creating broadband absorption using scattering and physical optics mechanisms.
{"title":"Optical absorption in microstructured crystalline silicon thin films","authors":"S. G. Sandoval, M. Khizar, D. Modisette, J. Anderson, R. Manginell, N. Amin, K. Sopian, S. H. Zaidi","doi":"10.1109/PVSC.2010.5617003","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617003","url":null,"abstract":"In Si solar cells, the cost of the Si wafer itself accounts for over 50 % of energy conversion; therefore, economic use of Si contributes significantly towards lowering cost. Thin-film (∼ 25 µm) crystalline Si (c-Si) solar cells films are ideally-suited for low-cost photovoltaics. These thin-film c-Si solar cells are manufactured through a wide range of industrial processes including epitaxial growth, smart-cut, and layer transfer. In these devices, weak optical absorption of Si fundamentally limits performance. Historically, several surface texturing mechanisms have evolved to enhance optical absorption in solar cells. Most of geometrical-optics based texturing mechanisms require etched features comparable to thin-film thickness. As a result, randomly-created subwavelength structures are finding increasing applications for reducing surface reflection as well as enhancing near IR absorption. We report on diffractive and physical optics mechanisms in enhancing absorption in thin Si films. Randomly-created subwavelength diffractive structures as well periodically-patterned deeply-etched subwavelength structures have been demonstrated to be highly effective in reducing reflection and creating broadband absorption using scattering and physical optics mechanisms.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"80 1","pages":"001597-001600"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73360245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616564
K. Rapolu, Pritpal Singh, S. Shea
This paper reports the design of a two dimensional numerical model for silicon solar cells to study a selective emitter configuration. The solar cell model has an n+ p p+ structure with a measured doping profile in the emitter and uniformly doped back surface field. The carrier flow pattern in the solar cell was analyzed by solving the diffusion equations using appropriate boundary conditions. The numerical model was developed in COMSOL by solving the Poisson equation; the current density equation and the continuity equation in each region. This model uses Fermi Dirac statistics to determine carrier densities in heavily doped regions. The simulation results indicate that if the surface doping density under the selective emitter is very high compared to the field (non-selective) region, then the width of the selective emitter fingers strongly influences Voc. But if the surface doping density under the selective emitter is only slightly high compared to the field region, then the influence on Voc is modest. This model can be used as a tool for understanding and optimizing the selective emitter configuration in the emitter region. Solar cells were fabricated with selective emitter configurations with various doping densities. Validation of the 2D model was done by comparing the simulation results with experimental results.
{"title":"Two dimensional numerical modeling of a silicon solar cell with selective emitter configuration","authors":"K. Rapolu, Pritpal Singh, S. Shea","doi":"10.1109/PVSC.2010.5616564","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616564","url":null,"abstract":"This paper reports the design of a two dimensional numerical model for silicon solar cells to study a selective emitter configuration. The solar cell model has an n+ p p+ structure with a measured doping profile in the emitter and uniformly doped back surface field. The carrier flow pattern in the solar cell was analyzed by solving the diffusion equations using appropriate boundary conditions. The numerical model was developed in COMSOL by solving the Poisson equation; the current density equation and the continuity equation in each region. This model uses Fermi Dirac statistics to determine carrier densities in heavily doped regions. The simulation results indicate that if the surface doping density under the selective emitter is very high compared to the field (non-selective) region, then the width of the selective emitter fingers strongly influences Voc. But if the surface doping density under the selective emitter is only slightly high compared to the field region, then the influence on Voc is modest. This model can be used as a tool for understanding and optimizing the selective emitter configuration in the emitter region. Solar cells were fabricated with selective emitter configurations with various doping densities. Validation of the 2D model was done by comparing the simulation results with experimental results.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"002227-002232"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73381170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616061
C. Neufeld, Zhen Chen, S. C. Cruz, N. Toledo, S. Denbaars, U. Mishra
In this work we report on the optimization of the p-GaN window layer for InGaN/GaN solar cells. We studied the effect of p-GaN thickness and growth temperature on the electrical performance. By optimizing the window thickness of InxGa1−xN solar cells with XIn ≈0.04 we maximized short wavelength response and produced solar cells with 82% FF and Voc of 2 V and enhancement of Jsc of 80% over un-optimized devices. We also studied the effect of growth temperature of the window layer, and found that the electrical performance was greatly improved with higher growth temperatures. By increasing the p-GaN growth temperature from 890 °C to 1040 °C, reverse bias leakage was reduced by three orders of magnitude, Voc increased from 0.85 to 1.65 V and peak output power increased by nearly 100% for devices with XIn≈0.08. Surface pit density was also significantly decreased by increasing growth temperature and seems to be an important mechanism for leakage in these devices.
{"title":"Optimization of the p-GaN window layer for InGaN/GaN solar cells","authors":"C. Neufeld, Zhen Chen, S. C. Cruz, N. Toledo, S. Denbaars, U. Mishra","doi":"10.1109/PVSC.2010.5616061","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616061","url":null,"abstract":"In this work we report on the optimization of the p-GaN window layer for InGaN/GaN solar cells. We studied the effect of p-GaN thickness and growth temperature on the electrical performance. By optimizing the window thickness of InxGa1−xN solar cells with XIn ≈0.04 we maximized short wavelength response and produced solar cells with 82% FF and Voc of 2 V and enhancement of Jsc of 80% over un-optimized devices. We also studied the effect of growth temperature of the window layer, and found that the electrical performance was greatly improved with higher growth temperatures. By increasing the p-GaN growth temperature from 890 °C to 1040 °C, reverse bias leakage was reduced by three orders of magnitude, Voc increased from 0.85 to 1.65 V and peak output power increased by nearly 100% for devices with XIn≈0.08. Surface pit density was also significantly decreased by increasing growth temperature and seems to be an important mechanism for leakage in these devices.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"89 1","pages":"002089-002092"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79935736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614244
J. Bartsch, A. Mondon, C. Schetter, M. Horteis, S. Glunz
Our work deals with the creation of copper-containing stack systems for the front side metallization of silicon solar cells. In this contribution, we give an overview of different approaches from our labs. We have developed processes to apply nickel diffusion barriers onto seed layers and directly onto silicon with both electrolytic and electroless processes. These are reinforced by a light-induced copper plating process. On aerosol-printed seed layers, cell efficiencies equal to those of reference cells with advanced silver metallization have been achieved with a nickel/copper/tin stack system (16.8% on 5×5cm2 industrial Cz-material, 20.3% on FZ high-efficiency substrates, 2×2cm2). As the long term stability of the resulting cells is a critical factor, there is need for a method to characterize this aspect. We developed a thermally accelerated ageing procedure, mirroring the total copper diffusion during a typical cell life cycle. Solar cells with advanced metal stack systems have shown no significant decrease in performance during this thermal stress test.
{"title":"Copper as conducting layer in advanced front side metallization processes for crystalline silicon solar cells, exceeding 20% on printed seed layers","authors":"J. Bartsch, A. Mondon, C. Schetter, M. Horteis, S. Glunz","doi":"10.1109/PVSC.2010.5614244","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614244","url":null,"abstract":"Our work deals with the creation of copper-containing stack systems for the front side metallization of silicon solar cells. In this contribution, we give an overview of different approaches from our labs. We have developed processes to apply nickel diffusion barriers onto seed layers and directly onto silicon with both electrolytic and electroless processes. These are reinforced by a light-induced copper plating process. On aerosol-printed seed layers, cell efficiencies equal to those of reference cells with advanced silver metallization have been achieved with a nickel/copper/tin stack system (16.8% on 5×5cm2 industrial Cz-material, 20.3% on FZ high-efficiency substrates, 2×2cm2). As the long term stability of the resulting cells is a critical factor, there is need for a method to characterize this aspect. We developed a thermally accelerated ageing procedure, mirroring the total copper diffusion during a typical cell life cycle. Solar cells with advanced metal stack systems have shown no significant decrease in performance during this thermal stress test.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"4 1","pages":"001299-001303"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76800781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617027
R. Ruther, L. Nascimento, J. Urbanetz Junior, P. Pfitscher, T. Viana
In the search for the best compromise between output performance and production cost, the PV industry has devoted considerable efforts in R&D in the last decades. Associated to the incentive programs led by Germany in the form of its feed-in tariffs program, these efforts have resulted in the impressive growth this industry has experienced in the last ten years. Among the competing PV technologies, thin film amorphous silicon has strived to overcome efficiency and production cost limitations, and the development of microcrystalline silicon has brought to the market large-area PV modules with efficiencies closer to 10%. It has been previously demonstrated that thin film a-Si is a good performer in warm climates. In this work we assess the performance of a 2kWp μc-Si installation operating in a warm climate in Brazil, at the same site where we have been operating a 2kWp a-Si installation for over 12 years. Our results show that both a-Si and μc-Si perform well under the high operating temperatures prevailing at the site.
{"title":"Performance assessment of a microcrystalline Si PV installation in a warm climate","authors":"R. Ruther, L. Nascimento, J. Urbanetz Junior, P. Pfitscher, T. Viana","doi":"10.1109/PVSC.2010.5617027","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617027","url":null,"abstract":"In the search for the best compromise between output performance and production cost, the PV industry has devoted considerable efforts in R&D in the last decades. Associated to the incentive programs led by Germany in the form of its feed-in tariffs program, these efforts have resulted in the impressive growth this industry has experienced in the last ten years. Among the competing PV technologies, thin film amorphous silicon has strived to overcome efficiency and production cost limitations, and the development of microcrystalline silicon has brought to the market large-area PV modules with efficiencies closer to 10%. It has been previously demonstrated that thin film a-Si is a good performer in warm climates. In this work we assess the performance of a 2kWp μc-Si installation operating in a warm climate in Brazil, at the same site where we have been operating a 2kWp a-Si installation for over 12 years. Our results show that both a-Si and μc-Si perform well under the high operating temperatures prevailing at the site.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"42 1","pages":"002287-002290"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81869628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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