Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616019
K. Surana, H. Lepage, Daniel Bellet, G. Carval, Mathieu Baudrit, Philippe Thony, Pierre Mur
In this work, we present the fabrication and the structural and electrical characterization of quantum confined silicon nanodots for advanced 3rd generation photovoltaic cells. Silicon permits its bandgap control by forming quantum confined nanocrystals in SiO2 (diameter < 10 nm) and allowing a bandgap of more than that of the bulk (1.1 eV). We examine the properties of such films of SiO2 with embedded silicon nanocrystals (nc-Si) of diameter ≈ 5 nm. Techniques like GIXRD, HRTEM, FTIR, XPS and spectroscopic ellipsometry have been used to investigate the film structure, size and distribution of the nanocrystals. Contrary to expectations from a largely dielectric material, significant conduction has been observed in our nc-Si embedded SiO2 film. This conduction, likely to be via the nanodots, is a promising result for integration into photovoltaic devices.
{"title":"Towards silicon nanocrystals based solar cells: Morphological properties and conduction phenomena","authors":"K. Surana, H. Lepage, Daniel Bellet, G. Carval, Mathieu Baudrit, Philippe Thony, Pierre Mur","doi":"10.1109/PVSC.2010.5616019","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616019","url":null,"abstract":"In this work, we present the fabrication and the structural and electrical characterization of quantum confined silicon nanodots for advanced 3rd generation photovoltaic cells. Silicon permits its bandgap control by forming quantum confined nanocrystals in SiO2 (diameter < 10 nm) and allowing a bandgap of more than that of the bulk (1.1 eV). We examine the properties of such films of SiO2 with embedded silicon nanocrystals (nc-Si) of diameter ≈ 5 nm. Techniques like GIXRD, HRTEM, FTIR, XPS and spectroscopic ellipsometry have been used to investigate the film structure, size and distribution of the nanocrystals. Contrary to expectations from a largely dielectric material, significant conduction has been observed in our nc-Si embedded SiO2 film. This conduction, likely to be via the nanodots, is a promising result for integration into photovoltaic devices.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"116 1","pages":"001868-001872"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83391287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614072
Y. Larionova, N. Harder, R. Brendel
The influence of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of 2.5 Ωcm n-type Czochralski silicon substrates has been investigated. By annealing theses stacks in air we achieve surface recombination velocities (SRV) better (i.e. lower) than 2.6 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration for obtaining optimum surface passivation. Furthermore, we also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several months. We find a slight degradation of the surface passivation for thicker oxides and no observable degradation for the 10 nm thick SiO2 layer in our SiO2/SiN stacks after 6 weeks of storage. Short annealing at 400°C in air restores the passivation quality and from then on remains unchanged for the measured storage time of 35 weeks.
{"title":"Effect of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-type Cz silicon substrates","authors":"Y. Larionova, N. Harder, R. Brendel","doi":"10.1109/PVSC.2010.5614072","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614072","url":null,"abstract":"The influence of SiO2 thicknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of 2.5 Ωcm n-type Czochralski silicon substrates has been investigated. By annealing theses stacks in air we achieve surface recombination velocities (SRV) better (i.e. lower) than 2.6 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration for obtaining optimum surface passivation. Furthermore, we also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several months. We find a slight degradation of the surface passivation for thicker oxides and no observable degradation for the 10 nm thick SiO2 layer in our SiO2/SiN stacks after 6 weeks of storage. Short annealing at 400°C in air restores the passivation quality and from then on remains unchanged for the measured storage time of 35 weeks.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"51 1","pages":"001207-001209"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84661319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614540
A. Minuto, G. Timò, P. Groppelli, M. Sturm
A new theoretical and experimental ‘current mismatch’ analysis of CPVM modules, including series resistance effects, is proposed. It allows predicting the I–V curve and the maximum power point of the module, considering its series resistance value and a given mismatch condition, for all the possible circuital module topologies having a fixed number of Multi-junction (MJ) solar cells. The optimum module circuital layout can be determined considering the mismatched cells number, the mismatch distribution in the module, the current mismatch percent value related to each cell, the module series resistance value and the resistance value of cables connecting the module to the inverter. The new theoretical approach is validated on a 144 MJ solar cells Point-Focus module, of which, in order to experimentally simulate the mismatched conditions, some cells are on purpose blinded and the module experimental I–V curve detected. The experimental curves are successfully compared with the theoretical ones predicted by the modeling application. On the base of the theoretical mismatch analysis for modules consisting of only-one string with series-connected receivers, an original algorithm is developed to identify the current receiver's mismatch starting from any experimentally detected I–V curve, also for curves presenting many current steps.
{"title":"Concentrating photovoltaic multijunction (CPVM) module electrical layout optimisation by a new theoretical and experimental “mismatch” analysis including series resistance effects","authors":"A. Minuto, G. Timò, P. Groppelli, M. Sturm","doi":"10.1109/PVSC.2010.5614540","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614540","url":null,"abstract":"A new theoretical and experimental ‘current mismatch’ analysis of CPVM modules, including series resistance effects, is proposed. It allows predicting the I–V curve and the maximum power point of the module, considering its series resistance value and a given mismatch condition, for all the possible circuital module topologies having a fixed number of Multi-junction (MJ) solar cells. The optimum module circuital layout can be determined considering the mismatched cells number, the mismatch distribution in the module, the current mismatch percent value related to each cell, the module series resistance value and the resistance value of cables connecting the module to the inverter. The new theoretical approach is validated on a 144 MJ solar cells Point-Focus module, of which, in order to experimentally simulate the mismatched conditions, some cells are on purpose blinded and the module experimental I–V curve detected. The experimental curves are successfully compared with the theoretical ones predicted by the modeling application. On the base of the theoretical mismatch analysis for modules consisting of only-one string with series-connected receivers, an original algorithm is developed to identify the current receiver's mismatch starting from any experimentally detected I–V curve, also for curves presenting many current steps.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"185 1","pages":"003081-003086"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84760563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614752
D. Albin, J. A. del Cueto, S. Demtsu, S. Bansal
The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.
{"title":"The use of 2nd and 3rd level correlation analysis for studying degradation in polycrystalline thin-film solar cells","authors":"D. Albin, J. A. del Cueto, S. Demtsu, S. Bansal","doi":"10.1109/PVSC.2010.5614752","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614752","url":null,"abstract":"The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"20 1","pages":"001155-001160"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88091480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614483
A. T. Mallajosyula, S. Sundar Kumar Iyer, B. Mazhari
Bulk heterojunction (BHJ) solar cells of P3HT:PCBM doped with SWNTs were fabricated which doubled the efficiency over the undoped devices. No surface modifications of SWNTs were done during fabrication. Absorption and photoluminescence spectra along with photocurrent and spectral response of the devices show that SWNTs do not result in any significant charge generation at the P3HT:SWNT interface indicating that possible type-II heterojunctions between s-SWNTs and P3HT were dominated by the effects due to metallic tubes. At an optimum concentration of 0.75 wt% SWNTs, a 10% improvement in effective mobility was observed. In the voltage range of solar cell operation, two orders increase in injected current density is observed which has an Ohmic behavior. From the peak voltage of the capacitance-voltage characteristics, it was inferred that SWNTs reduce the Vbi of the devices by only 60 mV. From the Cole-Cole in the diffusion transport regime, it was observed that the injected carrier life time gets lowered from 0.628 ms to 0.125 ms with SWNTs. A negative capacitance was observed in reverse bias in devices with SWNTs at low frequencies which has similar dependence on applied field as that in forward bias. This is attributed to the large reverse current injected through SWNT energy levels, making the effects of space charge, trapping, and recombination significant. The surface roughness and volume were more than doubled with SWNTs which resulted in increased cathode coverage area affecting the charge collection efficiency. Charge extraction efficiency is analyzed using the photocurrent loss normalized to the dark current where two orders of magnitude improvement is observed with SWNTs.
{"title":"Role of single walled carbon nanotubes in improving the efficiency of P3HT:PCBM solar cells - impedance spectroscopy and morphology studies","authors":"A. T. Mallajosyula, S. Sundar Kumar Iyer, B. Mazhari","doi":"10.1109/PVSC.2010.5614483","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614483","url":null,"abstract":"Bulk heterojunction (BHJ) solar cells of P3HT:PCBM doped with SWNTs were fabricated which doubled the efficiency over the undoped devices. No surface modifications of SWNTs were done during fabrication. Absorption and photoluminescence spectra along with photocurrent and spectral response of the devices show that SWNTs do not result in any significant charge generation at the P3HT:SWNT interface indicating that possible type-II heterojunctions between s-SWNTs and P3HT were dominated by the effects due to metallic tubes. At an optimum concentration of 0.75 wt% SWNTs, a 10% improvement in effective mobility was observed. In the voltage range of solar cell operation, two orders increase in injected current density is observed which has an Ohmic behavior. From the peak voltage of the capacitance-voltage characteristics, it was inferred that SWNTs reduce the Vbi of the devices by only 60 mV. From the Cole-Cole in the diffusion transport regime, it was observed that the injected carrier life time gets lowered from 0.628 ms to 0.125 ms with SWNTs. A negative capacitance was observed in reverse bias in devices with SWNTs at low frequencies which has similar dependence on applied field as that in forward bias. This is attributed to the large reverse current injected through SWNT energy levels, making the effects of space charge, trapping, and recombination significant. The surface roughness and volume were more than doubled with SWNTs which resulted in increased cathode coverage area affecting the charge collection efficiency. Charge extraction efficiency is analyzed using the photocurrent loss normalized to the dark current where two orders of magnitude improvement is observed with SWNTs.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"63 1","pages":"000095-000101"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86706305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616069
Z. Huang, Jie Chen, M. Sestak, D. Attygalle, L. R. Dahal, Meghan R. Mapes, D. Strickler, K. Kormanyos, C. Salupo, R. Collins
The mapping capability of multichannel spectro-scopic ellipsometry (SE) has been demonstrated with examples from hydrogenated amorphous silicon (a-Si:H) and CdTe thin film photovoltaics (PV) technologies on glass. Maps as large as 40 x 80 cm2 have been obtained. For a-Si:H, maps of the bulk i-layer thickness and band gap as well as surface roughness layer thickness have been determined. For CdTe, a map of the CdS window layer thickness has been determined with the prospect of grain structure mapping. In both cases, maps of the thickness and properties of the underlying transparent conducting oxide (TCO) layers have been determined. These first results demonstrate the ability of mapping SE to guide scale-up of thin film PV deposition processes.
{"title":"Optical mapping of large area thin film solar cells","authors":"Z. Huang, Jie Chen, M. Sestak, D. Attygalle, L. R. Dahal, Meghan R. Mapes, D. Strickler, K. Kormanyos, C. Salupo, R. Collins","doi":"10.1109/PVSC.2010.5616069","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616069","url":null,"abstract":"The mapping capability of multichannel spectro-scopic ellipsometry (SE) has been demonstrated with examples from hydrogenated amorphous silicon (a-Si:H) and CdTe thin film photovoltaics (PV) technologies on glass. Maps as large as 40 x 80 cm2 have been obtained. For a-Si:H, maps of the bulk i-layer thickness and band gap as well as surface roughness layer thickness have been determined. For CdTe, a map of the CdS window layer thickness has been determined with the prospect of grain structure mapping. In both cases, maps of the thickness and properties of the underlying transparent conducting oxide (TCO) layers have been determined. These first results demonstrate the ability of mapping SE to guide scale-up of thin film PV deposition processes.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"001678-001683"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81954702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614621
A. Fedoseyev, M. Turowski, A. Raman, E. Taylor, S. Hubbard, S. Polly, A. Balandin
Novel nanomaterials and devices based on them offer significant advantages over traditional technologies in terms of light-weight and efficiency for applications in satellite and space systems. Examples of such novel devices include quantum dot (QD) based solar cells and photodetectors. However, the radiation effects modeling tools are not yet available for these devices, and the response to radiation are not well understood (Figure 1). Review of numerical models and experimental investigation of radiation effects in quantum dot based solar cells are provided. Although some studies have been conducted on degradation of solar cells in high-radiation environment of space and test data on the performance of solar cells in a radiation environment are collected, the mechanisms of radiation-induced degradation of QD solar cells has yet to be established. We develop the Nanoscale Technology Computer Aided Design (NanoTCAD) simulation software for simulation of radiation effects in QD-based photovoltaic (PV), and use conducted proton irradiation experiments to develop models and perform a direct comparison of radiation hardness of quantum dot based cells and regular solar cells. These NanoTCAD tools are based on advanced drift-diffusion and quantum models for the simulation of QD based devices and materials.
{"title":"Investigation and modeling of space radiation effects in quantum dot solar cells","authors":"A. Fedoseyev, M. Turowski, A. Raman, E. Taylor, S. Hubbard, S. Polly, A. Balandin","doi":"10.1109/PVSC.2010.5614621","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614621","url":null,"abstract":"Novel nanomaterials and devices based on them offer significant advantages over traditional technologies in terms of light-weight and efficiency for applications in satellite and space systems. Examples of such novel devices include quantum dot (QD) based solar cells and photodetectors. However, the radiation effects modeling tools are not yet available for these devices, and the response to radiation are not well understood (Figure 1). Review of numerical models and experimental investigation of radiation effects in quantum dot based solar cells are provided. Although some studies have been conducted on degradation of solar cells in high-radiation environment of space and test data on the performance of solar cells in a radiation environment are collected, the mechanisms of radiation-induced degradation of QD solar cells has yet to be established. We develop the Nanoscale Technology Computer Aided Design (NanoTCAD) simulation software for simulation of radiation effects in QD-based photovoltaic (PV), and use conducted proton irradiation experiments to develop models and perform a direct comparison of radiation hardness of quantum dot based cells and regular solar cells. These NanoTCAD tools are based on advanced drift-diffusion and quantum models for the simulation of QD based devices and materials.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"002533-002536"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83647053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616123
S. Johnston, I. Repins, N. Call, R. Sundaramoorthy, K. Jones, B. To
Characterization by imaging has been performed on various sets of Si, Cu(In,Ga)Se2 (CIGS), and CdTe solar cell samples. The imaging techniques include photoluminescence (PL) imaging, electroluminescence (EL) imaging, reverse-bias EL imaging (ReBEL), illuminated lock-in thermography (ILIT), and forward- and reverse-bias dark lock-in thermography (DLIT). PL imaging of Si has shown that the image intensity correlates to minority-carrier lifetime. PL imaging of CIGS shows brightness variations after the deposition of the CIGS that persist through the CdS deposition and subsequent processing steps to finish the devices. The PL and EL intensities on both Si and CIGS finished cells correlate to efficiency and open-circuit voltage. Also, for all materials, PL and EL imaging show dark areas due to carrier recombination induced by defects. These same areas often appear in ILIT, DLIT, and ReBEL as heated areas or breakdown sites where currents flow through weak diodes, shunts, and defects. For Si cells, we have correlated the cells' fill factors to the amount of shunting detected by DLIT. For CIGS cells, we have identified these detrimental weak diodes and shunts by imaging and show an example of a defect analyzed in more detail by scanning electron microscopy techniques using top view and cross-sectional imaging.
{"title":"Applications of imaging techniques to Si, Cu(In,Ga)Se2, and CdTe and correlation to solar cell parameters","authors":"S. Johnston, I. Repins, N. Call, R. Sundaramoorthy, K. Jones, B. To","doi":"10.1109/PVSC.2010.5616123","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616123","url":null,"abstract":"Characterization by imaging has been performed on various sets of Si, Cu(In,Ga)Se2 (CIGS), and CdTe solar cell samples. The imaging techniques include photoluminescence (PL) imaging, electroluminescence (EL) imaging, reverse-bias EL imaging (ReBEL), illuminated lock-in thermography (ILIT), and forward- and reverse-bias dark lock-in thermography (DLIT). PL imaging of Si has shown that the image intensity correlates to minority-carrier lifetime. PL imaging of CIGS shows brightness variations after the deposition of the CIGS that persist through the CdS deposition and subsequent processing steps to finish the devices. The PL and EL intensities on both Si and CIGS finished cells correlate to efficiency and open-circuit voltage. Also, for all materials, PL and EL imaging show dark areas due to carrier recombination induced by defects. These same areas often appear in ILIT, DLIT, and ReBEL as heated areas or breakdown sites where currents flow through weak diodes, shunts, and defects. For Si cells, we have correlated the cells' fill factors to the amount of shunting detected by DLIT. For CIGS cells, we have identified these detrimental weak diodes and shunts by imaging and show an example of a defect analyzed in more detail by scanning electron microscopy techniques using top view and cross-sectional imaging.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"001727-001732"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85366409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614442
K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis
Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.
{"title":"Localized doping using silicon ink technology for high efficiency solar cells","authors":"K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis","doi":"10.1109/PVSC.2010.5614442","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614442","url":null,"abstract":"Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"18 1","pages":"001465-001468"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88494132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616709
Tejas Prabhakar, J. Nagaraju
CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 104 cm−1; thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.
{"title":"Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies","authors":"Tejas Prabhakar, J. Nagaraju","doi":"10.1109/PVSC.2010.5616709","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616709","url":null,"abstract":"CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 104 cm−1; thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"26 1","pages":"001964-001969"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90740004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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