Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616372
Zimeng Cheng, K. Lo, H. Opyrchal, Jingong Pan, Dongguo Chen, Tao Zhou, Qi Wang, G. Georgiou, K. Chin
For p-CdTe/n-CdS solar cell, it is reported that the quantum efficiency and the collection efficiency are not only wave length dependent but also most importantly voltage dependent, since the CdTe solar cell is believed to be the diode which has non-shallow acceptors and deep levels where the roles of these levels are not clear. In this study, the quantum efficiency of CdTe solar cell with various optical biases, which is titled as “Working Quantum Efficiency (WQE)”, is measured. The result is compared with industrialized amorphous silicon solar cell. Simulation models are given to explain those measurements. The result shows the measurements of WQE is one of important evaluations for CdTe solar cell as well as it can contribute to its characterization and improvement.
{"title":"Working quantum efficiency of cdte solar cell","authors":"Zimeng Cheng, K. Lo, H. Opyrchal, Jingong Pan, Dongguo Chen, Tao Zhou, Qi Wang, G. Georgiou, K. Chin","doi":"10.1109/PVSC.2010.5616372","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616372","url":null,"abstract":"For p-CdTe/n-CdS solar cell, it is reported that the quantum efficiency and the collection efficiency are not only wave length dependent but also most importantly voltage dependent, since the CdTe solar cell is believed to be the diode which has non-shallow acceptors and deep levels where the roles of these levels are not clear. In this study, the quantum efficiency of CdTe solar cell with various optical biases, which is titled as “Working Quantum Efficiency (WQE)”, is measured. The result is compared with industrialized amorphous silicon solar cell. Simulation models are given to explain those measurements. The result shows the measurements of WQE is one of important evaluations for CdTe solar cell as well as it can contribute to its characterization and improvement.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"001912-001914"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89052155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616489
O. Al Taher, R. Cravens, P. Pien, Russ Jones, J. Ermer, P. Hebert, Jazper Chin
Spectrolab is qualifying its fourth generation of terrestrial concentrator multijunction cells (C4MJ). Prototypes of this product have been tested with an average efficiency of 40% at 50 W/cm2 illumination. This new generation is a departure from previous production technology in that, for the first time, it employs metamorphic rather than lattice-matched technology.
{"title":"Qualification testing of 40% metamorphic CPV solar cells","authors":"O. Al Taher, R. Cravens, P. Pien, Russ Jones, J. Ermer, P. Hebert, Jazper Chin","doi":"10.1109/PVSC.2010.5616489","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616489","url":null,"abstract":"Spectrolab is qualifying its fourth generation of terrestrial concentrator multijunction cells (C4MJ). Prototypes of this product have been tested with an average efficiency of 40% at 50 W/cm2 illumination. This new generation is a departure from previous production technology in that, for the first time, it employs metamorphic rather than lattice-matched technology.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"212 1","pages":"001995-001998"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89083543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614721
B. Hoang, F. Wong, V. Funderburk, M. Cho, K. Toyoda, H. Masui
Space Systems/Loral (SS/L) successfully completed electrostatic discharge (ESD) tests of Multi-junction (MJ) GaAs/Ge solar array design in geosynchronous space environment. This ESD test was based on ISO-11221, Space systems - Space solar panels -Spacecraft Charging Induced Electrostatic Discharge Test Methods. In addition to the ISO reference for the test schematic, SS/L implemented modified test circuitry to better simulate the on-orbit operational conditions of our solar array design. The ESD test circuit also included simulated solar array panel coverglass flashover. The ESD test program utilized a 25-cell coupon that had been subjected to 2,000 thermal cycles caused by earth eclipses in GEO orbit and >12,000 thermal cycles caused by the shadow of the spacecraft antennas. Other ESD test coupons are 4-cell coupons that, after baseline ESD experiments, can later be subjected to combined space environmental exposures tests. To demonstrate design robustness, we performed ESD tests to voltages and currents that are higher than that of on-orbit solar array operational voltages and currents. This paper discusses the coverglass flashover simulation, ESD test setup, the importance of the electrical test design in simulating the on-orbit operational conditions, and the test results.
Space Systems/Loral (SS/L)公司成功完成了地球同步空间环境下多结(MJ) GaAs/Ge太阳能电池阵列设计的静电放电(ESD)测试。该ESD测试基于ISO-11221《空间系统-空间太阳能电池板-航天器充电感应静电放电测试方法》。除了测试原理图的ISO参考外，SS/L还实施了修改的测试电路，以更好地模拟我们的太阳能电池阵列设计的在轨运行条件。ESD测试电路还包括模拟太阳能电池板覆盖玻璃闪络。ESD测试程序使用了25个单元的优惠券，该优惠券已经经历了由地球在GEO轨道上的日食引起的2000次热循环和由航天器天线阴影引起的12000次热循环。其他静电放电试验片为4单元片，在基线静电放电实验后，可随后进行联合空间环境暴露试验。为了证明设计的稳健性，我们对高于在轨太阳能电池阵列工作电压和电流的电压和电流进行了ESD测试。本文讨论了盖板闪络仿真、ESD试验设置、电气试验设计在模拟在轨运行条件中的重要性以及试验结果。
{"title":"Electrostatic discharge test with simulated coverglass flashover for multi-junction GaAs/Ge solar array design","authors":"B. Hoang, F. Wong, V. Funderburk, M. Cho, K. Toyoda, H. Masui","doi":"10.1109/PVSC.2010.5614721","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614721","url":null,"abstract":"Space Systems/Loral (SS/L) successfully completed electrostatic discharge (ESD) tests of Multi-junction (MJ) GaAs/Ge solar array design in geosynchronous space environment. This ESD test was based on ISO-11221, Space systems - Space solar panels -Spacecraft Charging Induced Electrostatic Discharge Test Methods. In addition to the ISO reference for the test schematic, SS/L implemented modified test circuitry to better simulate the on-orbit operational conditions of our solar array design. The ESD test circuit also included simulated solar array panel coverglass flashover. The ESD test program utilized a 25-cell coupon that had been subjected to 2,000 thermal cycles caused by earth eclipses in GEO orbit and >12,000 thermal cycles caused by the shadow of the spacecraft antennas. Other ESD test coupons are 4-cell coupons that, after baseline ESD experiments, can later be subjected to combined space environmental exposures tests. To demonstrate design robustness, we performed ESD tests to voltages and currents that are higher than that of on-orbit solar array operational voltages and currents. This paper discusses the coverglass flashover simulation, ESD test setup, the importance of the electrical test design in simulating the on-orbit operational conditions, and the test results.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"46 1","pages":"001118-001123"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91476553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614569
Jaewon Oh, G. Tamizhmani
The photovoltaic (PV) modules exposed to the sunlight under typical field conditions experience much higher temperatures than the ambient temperatures. In the hot climatic conditions such as Arizona, the module temperatures could reach as high as 85°C to 95°C depending on the mounting and operating configurations. In the worst case scenarios such as partial shading of PV cells of air gap free rooftop modules, some of the components might attain high enough temperatures that could compromise the safety and functionality requirements of the module and its components. Currently, two module safety standards are extensively used: IEC 61730-2 (international) and ANSI/UL 1703 (United States). These standards provide procedures to determine the maximum reference temperatures of various components and materials of a PV module. This paper presents and analyzes the temperature test results obtained on 9 different components of a PV module: front glass, substrate/backsheet (polymer), PV cell, j-box ambient, j-box surface, positive terminal, backsheet inside j-box, field wiring and diode. The temperature test results of about 140 crystalline silicon modules from a large number of manufacturers who tested modules between 2006 and 2009 at ASU/TUV-PTL are analyzed under three test conditions: short-circuit, open-circuit and short-circuit and shaded.
{"title":"Temperature testing and analysis of PV modules PER ANSI/UL 1703 and IEC 61730 standards","authors":"Jaewon Oh, G. Tamizhmani","doi":"10.1109/PVSC.2010.5614569","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614569","url":null,"abstract":"The photovoltaic (PV) modules exposed to the sunlight under typical field conditions experience much higher temperatures than the ambient temperatures. In the hot climatic conditions such as Arizona, the module temperatures could reach as high as 85°C to 95°C depending on the mounting and operating configurations. In the worst case scenarios such as partial shading of PV cells of air gap free rooftop modules, some of the components might attain high enough temperatures that could compromise the safety and functionality requirements of the module and its components. Currently, two module safety standards are extensively used: IEC 61730-2 (international) and ANSI/UL 1703 (United States). These standards provide procedures to determine the maximum reference temperatures of various components and materials of a PV module. This paper presents and analyzes the temperature test results obtained on 9 different components of a PV module: front glass, substrate/backsheet (polymer), PV cell, j-box ambient, j-box surface, positive terminal, backsheet inside j-box, field wiring and diode. The temperature test results of about 140 crystalline silicon modules from a large number of manufacturers who tested modules between 2006 and 2009 at ASU/TUV-PTL are analyzed under three test conditions: short-circuit, open-circuit and short-circuit and shaded.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"55 7","pages":"000984-000988"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91481683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614693
G. Mount, T. Buyuklimanli, R. Michel, J. Moskito, S. Robie, U. Sharma, Larry Wang
CuInxGa(1−x)Se2 (CIGS) is one of the most promising thin film PV materials due to its high efficiency, variety of growth methods available, and compatibility with flexible substrates enabling roll-to-roll manufacturing. The goal for all PV is low cost per watt, the solar industry's key metric. CIGS offers similar manufacturing costs compared with other thin film PV but with the promise of higher efficiency. Significant effort has gone into reducing materials costs, manufacturing costs, and into improving efficiency. But what makes one cell efficient and the next cell less efficient when made using the same process? In this work we compare two CIGS structures, both grown using the same process. One was measured at 6% efficiency and the other was over 12% efficient. Why the difference? We used surface analytical techniques to examine the two cells. We compared layer structure, interfaces, composition, and contaminants looking for differences that might explain the efficiency difference. Can we determine with physical analysis why one solar cell is efficient, while another seemingly identical cell is less efficient? Some measurements showed no difference, some small differences, and some large differences. Identification of differences between high and low efficiency devices could help identify important process control variables.
{"title":"Investigation of differences between high and low efficiency CIGS solar cell structures using surface analytical techniques","authors":"G. Mount, T. Buyuklimanli, R. Michel, J. Moskito, S. Robie, U. Sharma, Larry Wang","doi":"10.1109/PVSC.2010.5614693","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614693","url":null,"abstract":"CuInxGa(1−x)Se2 (CIGS) is one of the most promising thin film PV materials due to its high efficiency, variety of growth methods available, and compatibility with flexible substrates enabling roll-to-roll manufacturing. The goal for all PV is low cost per watt, the solar industry's key metric. CIGS offers similar manufacturing costs compared with other thin film PV but with the promise of higher efficiency. Significant effort has gone into reducing materials costs, manufacturing costs, and into improving efficiency. But what makes one cell efficient and the next cell less efficient when made using the same process? In this work we compare two CIGS structures, both grown using the same process. One was measured at 6% efficiency and the other was over 12% efficient. Why the difference? We used surface analytical techniques to examine the two cells. We compared layer structure, interfaces, composition, and contaminants looking for differences that might explain the efficiency difference. Can we determine with physical analysis why one solar cell is efficient, while another seemingly identical cell is less efficient? Some measurements showed no difference, some small differences, and some large differences. Identification of differences between high and low efficiency devices could help identify important process control variables.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"003466-003471"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90337308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617178
J. Giesecke, D. Walter, F. Kopp, P. Rosenits, M. Schubert, W. Warta
A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.
{"title":"Simultaneous determination of carrier lifetime and net dopant concentration of silicon wafers from photoluminescence","authors":"J. Giesecke, D. Walter, F. Kopp, P. Rosenits, M. Schubert, W. Warta","doi":"10.1109/PVSC.2010.5617178","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617178","url":null,"abstract":"A simultaneous determination of injection dependent minority carrier lifetime and net dopant concentration in crystalline silicon wafers from quasi-steady-state photoluminescence (QSSPL) is theoretically derived and experimentally implemented. The time shift between maxima of a time modulated irradiation intensity and the respective photoluminescence intensity is linked to effective minority carrier lifetime. In addition, the ratio of peak curvatures of irradiation intensity and photoluminescence intensity reveals the net dopant concentration of the respective material. Thus, we found a luminescence based technique to determine injection dependent minority carrier lifetime in silicon wafers, which requires a priori information neither about carrier mobilities nor about net dopant concentration.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"195 1","pages":"000847-000851"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83808268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616690
V. Palekis, D. Shen, D. Hodges, S. Bhandaru, E. Stefanakos, D. Morel, C. Ferekides
A common feature of the most efficient laboratory scale CdS/CdTe solar cells has been the use of close-spaced sublimation (CSS) for the deposition of CdTe [1]. In this study, the growth of CdTe and ZnTe thin films deposited on flexible foil substrates by CSS has been investigated in order to study their structural properties for solar cell applications. Thin films of CdTe were deposited by CSS onto substrates held at temperatures in the range of 400–550°C. The effect of the substrate-source temperature and the growth rate on the structure and surface morphology of CdTe films were analyzed. The structural and surface morphology of the CdTe films were determined by XRD and SEM. Similar studies have been done on the growth characteristics of ZnTe which is often used as a back contact interlayer.
{"title":"Structural properties of CdTe and ZnTe thin films deposited on flexible foil substrates","authors":"V. Palekis, D. Shen, D. Hodges, S. Bhandaru, E. Stefanakos, D. Morel, C. Ferekides","doi":"10.1109/PVSC.2010.5616690","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616690","url":null,"abstract":"A common feature of the most efficient laboratory scale CdS/CdTe solar cells has been the use of close-spaced sublimation (CSS) for the deposition of CdTe [1]. In this study, the growth of CdTe and ZnTe thin films deposited on flexible foil substrates by CSS has been investigated in order to study their structural properties for solar cell applications. Thin films of CdTe were deposited by CSS onto substrates held at temperatures in the range of 400–550°C. The effect of the substrate-source temperature and the growth rate on the structure and surface morphology of CdTe films were analyzed. The structural and surface morphology of the CdTe films were determined by XRD and SEM. Similar studies have been done on the growth characteristics of ZnTe which is often used as a back contact interlayer.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"001960-001963"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79085084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614481
A. Fallisch, D. Stuwe, R. Neubauer, D. Wagenmann, R. Keding, J. Nekarda, R. Preu, D. Biro
This work focuses on manufacturing inkjet structured Emitter Wrap-Through (EWT) silicon solar cells with a side selective emitter and an evaporated metallization. Inkjet structuring is a suitable technique for the formation of interdigitated structures used in back contacted silicon solar cells because it allows small feature sizes and has high alignment accuracy. Therefore all structuring steps in this EWT solar cell process are done with the help of inkjet masking. This includes the structuring of a silicon oxide passivation layer and the evaporated aluminum metallization. For all masking processes an acid-resistant inkjet hotmelt ink is used. An evaporated thick aluminum layer and laser-fired contacts (LFC) [1] to contact the bulk region are introduced. Cell efficiencies above 15% prior to a forming gas anneal are reached. The best cell reaches an efficiency of 15.7% after a short annealing step on a hotplate.
{"title":"Inkjet structured EWT silicon solar cells with evaporated aluminum metallization and laser-fired contacts","authors":"A. Fallisch, D. Stuwe, R. Neubauer, D. Wagenmann, R. Keding, J. Nekarda, R. Preu, D. Biro","doi":"10.1109/PVSC.2010.5614481","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614481","url":null,"abstract":"This work focuses on manufacturing inkjet structured Emitter Wrap-Through (EWT) silicon solar cells with a side selective emitter and an evaporated metallization. Inkjet structuring is a suitable technique for the formation of interdigitated structures used in back contacted silicon solar cells because it allows small feature sizes and has high alignment accuracy. Therefore all structuring steps in this EWT solar cell process are done with the help of inkjet masking. This includes the structuring of a silicon oxide passivation layer and the evaporated aluminum metallization. For all masking processes an acid-resistant inkjet hotmelt ink is used. An evaporated thick aluminum layer and laser-fired contacts (LFC) [1] to contact the bulk region are introduced. Cell efficiencies above 15% prior to a forming gas anneal are reached. The best cell reaches an efficiency of 15.7% after a short annealing step on a hotplate.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"003125-003130"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79232896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5742825
Jinsuk Lee, R. Elmore, C. Suh, W. Jones
Estimating the lifetime and activation energy of photovoltaic (PV) cells, devices, and components is a key element to understanding lifecycle costs and improving designs of PV systems. Standard techniques for accelerated lifetime testing (ALT) plans are resource intensive in terms of the number of samples used and the strain placed on the PV testing facilities. In this paper, we introduce the step-stress accelerated lifetime testing (SSALT) method applied to a hypothetical PV test. We describe the SSALT method as a means for alleviating the resource burdens associated with the usual ALT setup. In the last section, we describe a testing plan for a future PV SSALT experiment.
{"title":"Step-stress accelerated lifetime testing for photovoltaic devices and cells","authors":"Jinsuk Lee, R. Elmore, C. Suh, W. Jones","doi":"10.1109/PVSC.2010.5742825","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5742825","url":null,"abstract":"Estimating the lifetime and activation energy of photovoltaic (PV) cells, devices, and components is a key element to understanding lifecycle costs and improving designs of PV systems. Standard techniques for accelerated lifetime testing (ALT) plans are resource intensive in terms of the number of samples used and the strain placed on the PV testing facilities. In this paper, we introduce the step-stress accelerated lifetime testing (SSALT) method applied to a hypothetical PV test. We describe the SSALT method as a means for alleviating the resource burdens associated with the usual ALT setup. In the last section, we describe a testing plan for a future PV SSALT experiment.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83222715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616865
D. Mitzi, T. Todorov, O. Gunawan, M. Yuan, Qing Cao, Wei Liu, K. Reuter, Masaru Kuwahara, Kouichi Misumi, A. Kellock, S. Chey, Thomas Goislard de Monsabert, A. Prabhakar, V. Deline, K. Fogel
Although CuIn1−xGaxSe2−ySy (CIGS) chalcopyrite and Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-related films offer significant potential for low-cost high-efficiency photovoltaic (PV) devices, the complicated multi-element nature of these materials generally leads to the requirement of more complex and costly deposition processes. This talk focuses on employing the unique solvent properties of hydrazine to solution-deposit CIGS and CZTSSe films for high-performance solar cells. CIGS films are deposited by completely dissolving all elements in hydrazine, solution-depositing a molecular precursor film, and heat treating in an inert atmosphere, to yield a single-phase chalcopyrite film (no post-deposition selenization required). Trace additions of Sb improve grain structure in the resulting film and enhance device performance. Devices based on a glass/Mo/spin-coated CIGS/CdS/i-ZnO/ITO structure yield power conversion efficiencies of as high as 13.6% (AM1.5 illumination; NREL certified). Analogous CZTSSe absorber layers have been processed using a hybrid hydrazine-based slurry approach, enabling liquid-based deposition of kesterite-type films and resulting device efficiencies of as high as 9.6% (AM1.5 illumination; NREL certified)—exceeding the previous kesterite performance record by ∼40%. The combination of improved efficiency, In-free absorber and solution-based processing opens opportunities for development of a low-cost and pervasive technology.
{"title":"Torwards marketable efficiency solution-processed kesterite and chalcopyrite photovoltaic devices","authors":"D. Mitzi, T. Todorov, O. Gunawan, M. Yuan, Qing Cao, Wei Liu, K. Reuter, Masaru Kuwahara, Kouichi Misumi, A. Kellock, S. Chey, Thomas Goislard de Monsabert, A. Prabhakar, V. Deline, K. Fogel","doi":"10.1109/PVSC.2010.5616865","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616865","url":null,"abstract":"Although CuIn1−xGaxSe2−ySy (CIGS) chalcopyrite and Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-related films offer significant potential for low-cost high-efficiency photovoltaic (PV) devices, the complicated multi-element nature of these materials generally leads to the requirement of more complex and costly deposition processes. This talk focuses on employing the unique solvent properties of hydrazine to solution-deposit CIGS and CZTSSe films for high-performance solar cells. CIGS films are deposited by completely dissolving all elements in hydrazine, solution-depositing a molecular precursor film, and heat treating in an inert atmosphere, to yield a single-phase chalcopyrite film (no post-deposition selenization required). Trace additions of Sb improve grain structure in the resulting film and enhance device performance. Devices based on a glass/Mo/spin-coated CIGS/CdS/i-ZnO/ITO structure yield power conversion efficiencies of as high as 13.6% (AM1.5 illumination; NREL certified). Analogous CZTSSe absorber layers have been processed using a hybrid hydrazine-based slurry approach, enabling liquid-based deposition of kesterite-type films and resulting device efficiencies of as high as 9.6% (AM1.5 illumination; NREL certified)—exceeding the previous kesterite performance record by ∼40%. The combination of improved efficiency, In-free absorber and solution-based processing opens opportunities for development of a low-cost and pervasive technology.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"75 1","pages":"000640-000645"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83372997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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