Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617208
G. Coletti
The impact on solar cell performance of iron has been investigated. Iron has been intentionally added to silicon feedstock used to grow p-type directionally solidified multicrystalline silicon ingots. A state of the art screen print solar cell process has been applied to wafers from the bottom to top of the ingot. Adding 50 ppmwt of iron to silicon feedstock, results in comparable solar cell performances to reference uncontaminated material, in the range 40 to 70% of the ingot height. Iron causes a reduction in the diffusion length, which decreases with the ingot height.
{"title":"Impact of metal contamination in multicrystalline silicon solar cells: Case study for iron","authors":"G. Coletti","doi":"10.1109/PVSC.2010.5617208","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617208","url":null,"abstract":"The impact on solar cell performance of iron has been investigated. Iron has been intentionally added to silicon feedstock used to grow p-type directionally solidified multicrystalline silicon ingots. A state of the art screen print solar cell process has been applied to wafers from the bottom to top of the ingot. Adding 50 ppmwt of iron to silicon feedstock, results in comparable solar cell performances to reference uncontaminated material, in the range 40 to 70% of the ingot height. Iron causes a reduction in the diffusion length, which decreases with the ingot height.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"8 1","pages":"000806-000809"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74415972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615938
W. Ho, Y.-Y. Chen, T.-H. Cheng, Jyun-Yan Chen, J.-A. Lu, P. Huang, C. W. Liu
The effective passivation needs (1) higher bandgap than Si with type 1 alignment, (2) low interface density at the interface between passivation layer and Si, and (3) ionized charges for field effect passivation. The thermal oxide (SiO2) with low interface defect density seems most effective but requires high growth temperature (900 °C). Al2O3 with trapped negative fixed charges can serve as the field effect passivation. Moreover, doped amorphous Si can also have the field effect passivation with the controlled ionized charge density. The effective life time is measured by quasi-steady-state photoconductance (QSSPC). Photoluminescence (PL) measurement is consistent with QSSPC, and can probe a local area with mapping ability on large samples. The dependence of PL intensity on surface recombination velocity is theoretically studied. The passivation of a-Si becomes less effective after crystallization at high temperature annealing, indicating the larger bandgap is necessary.
{"title":"Thermal oxide, Al2O3 and amorphous-Si passivation layers on silicon","authors":"W. Ho, Y.-Y. Chen, T.-H. Cheng, Jyun-Yan Chen, J.-A. Lu, P. Huang, C. W. Liu","doi":"10.1109/PVSC.2010.5615938","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615938","url":null,"abstract":"The effective passivation needs (1) higher bandgap than Si with type 1 alignment, (2) low interface density at the interface between passivation layer and Si, and (3) ionized charges for field effect passivation. The thermal oxide (SiO2) with low interface defect density seems most effective but requires high growth temperature (900 °C). Al2O3 with trapped negative fixed charges can serve as the field effect passivation. Moreover, doped amorphous Si can also have the field effect passivation with the controlled ionized charge density. The effective life time is measured by quasi-steady-state photoconductance (QSSPC). Photoluminescence (PL) measurement is consistent with QSSPC, and can probe a local area with mapping ability on large samples. The dependence of PL intensity on surface recombination velocity is theoretically studied. The passivation of a-Si becomes less effective after crystallization at high temperature annealing, indicating the larger bandgap is necessary.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"76 1","pages":"003163-003166"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72801266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614741
G. Allardyce, R. Barr, R. Chan, M. Moynihan, C. O'connor, T. Ridler
Post wire saw wafers presented for cleaning are heavily contaminated with cutting fluid slurry, silicon kerf, trace metallic species and oxides. There is no industry standard process or equipment set for this operation with various options utilised by the wafer manufacturer. However a common theme is the use of chemical cleaners to facilitate removal of the debris and contaminants. This paper describes studies conducted to determine potential effects of differing cleaner chemistry types on subsequent cell fabrication. By characterisation of contact angle, topography, etch depth and reflectance it is shown that certain cleaner types can have a profound and potentially adverse effect on the texture process and pyramid generation. Potential mechanisms are discussed and additional studies demonstrating that such adverse effects can be rectified are described.
{"title":"Interaction between post wire saw cleaning and the subsequent cell fabrication saw damage etch and texturing process","authors":"G. Allardyce, R. Barr, R. Chan, M. Moynihan, C. O'connor, T. Ridler","doi":"10.1109/PVSC.2010.5614741","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614741","url":null,"abstract":"Post wire saw wafers presented for cleaning are heavily contaminated with cutting fluid slurry, silicon kerf, trace metallic species and oxides. There is no industry standard process or equipment set for this operation with various options utilised by the wafer manufacturer. However a common theme is the use of chemical cleaners to facilitate removal of the debris and contaminants. This paper describes studies conducted to determine potential effects of differing cleaner chemistry types on subsequent cell fabrication. By characterisation of contact angle, topography, etch depth and reflectance it is shown that certain cleaner types can have a profound and potentially adverse effect on the texture process and pyramid generation. Potential mechanisms are discussed and additional studies demonstrating that such adverse effects can be rectified are described.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"19 2","pages":"003494-003497"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72559502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616917
Jaewook Kang, Sun-Young Park, Do‐Geun Kim, Jongk‐Kuk Kim
This paper described the effects of the electrode geometry combined with the cell area on the device performance fabricated by spray-coating method. We investigated the effects of cell size in organic solar cells (OSCs) by introducing of metal sub-electrodes to clearly define the geometry of the cell and realizing large-area cells up to 4.08 cm2. It is demonstrated that the series resistance could be reduced significantly by inserting metal sub-electrodes onto the ITO anode, yielding a power conversion efficiency (PCE) of 2.6±0.3 % up to the cell area of 4.08 cm2. This suggests that OSCs with sub-electrode geometry can be used for evaluating new materials and processes with accurate measurements on the centimeter scale.
{"title":"Large-are organic solar cells with metal sub-electrode on ito anode","authors":"Jaewook Kang, Sun-Young Park, Do‐Geun Kim, Jongk‐Kuk Kim","doi":"10.1109/PVSC.2010.5616917","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616917","url":null,"abstract":"This paper described the effects of the electrode geometry combined with the cell area on the device performance fabricated by spray-coating method. We investigated the effects of cell size in organic solar cells (OSCs) by introducing of metal sub-electrodes to clearly define the geometry of the cell and realizing large-area cells up to 4.08 cm2. It is demonstrated that the series resistance could be reduced significantly by inserting metal sub-electrodes onto the ITO anode, yielding a power conversion efficiency (PCE) of 2.6±0.3 % up to the cell area of 4.08 cm2. This suggests that OSCs with sub-electrode geometry can be used for evaluating new materials and processes with accurate measurements on the centimeter scale.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"003299-003301"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73428249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614465
P. Prabukanthan, R. J. Soukup, N. Ianno, A. Sarkar, Š. Kment, H. Kmentová, C. Kamler, C. Exstrom, J. Olejníček, S. Darveau
A low temperature chemical deposition method has been developed to deposit iron/sulfur thin films onto soda lime glass substrates. The chemical bath deposition (CBD) consists of aqueous solution ferrous sulphate, disodium salt of ethylenediaminetetra-acetic acid (Na2EDTA), sodium thiosulphate and organic solutions of ethylenediamine and methanol. The experiments were performed at room temperature and under two different conditions. The films were uniform and adhered well to the soda lime glass substrates. The deposited films were additionally processed in a sulfur and nitrogen atmosphere at a variety of different temperatures to form the pyrite phase of FeS2. The as-deposited and annealed thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, auger electron spectroscopy (AES), and resistivity. The optimization of the FeS2 pyrite growth parameters was determined using XRD. Although both methods appeared to form FeS2 the second method is the preferable one where additional sulfurization at 450 °C for one hour yielded the films with the maximum crystalline order and stoichiometry.
{"title":"Chemical bath deposition (CBD) of iron sulfide thin films for photovoltaic applications, crystallographic and optical properties","authors":"P. Prabukanthan, R. J. Soukup, N. Ianno, A. Sarkar, Š. Kment, H. Kmentová, C. Kamler, C. Exstrom, J. Olejníček, S. Darveau","doi":"10.1109/PVSC.2010.5614465","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614465","url":null,"abstract":"A low temperature chemical deposition method has been developed to deposit iron/sulfur thin films onto soda lime glass substrates. The chemical bath deposition (CBD) consists of aqueous solution ferrous sulphate, disodium salt of ethylenediaminetetra-acetic acid (Na2EDTA), sodium thiosulphate and organic solutions of ethylenediamine and methanol. The experiments were performed at room temperature and under two different conditions. The films were uniform and adhered well to the soda lime glass substrates. The deposited films were additionally processed in a sulfur and nitrogen atmosphere at a variety of different temperatures to form the pyrite phase of FeS2. The as-deposited and annealed thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, auger electron spectroscopy (AES), and resistivity. The optimization of the FeS2 pyrite growth parameters was determined using XRD. Although both methods appeared to form FeS2 the second method is the preferable one where additional sulfurization at 450 °C for one hour yielded the films with the maximum crystalline order and stoichiometry.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"88 1","pages":"002965-002969"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73631069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616430
A. Arehart, M. Brenner, Z. Zhang, K. Swaminathan, S. Ringel
Deep levels in solid-source MBE-grown n- and p-type (Al0.09Ga0.91)0.51In0.49P are investigated using deep level transient spectroscopy (DLTS). These results are correlated with background oxygen impurities measured by secondary ion mass spectroscopy and electrical properties using Hall effect. Oxygen impurity concentration is found to depend weakly on substrate offcut conditions in MBE-grown AlGaInP films. This is used to investigate the role of oxygen on deep levels in the n- and p-type samples using (100) GaAs substrates with three different substrate offcut conditions (A, B, and C). The DLTS of n-type AlGaInP reveals deep levels at EC-0.22, EC-0.31, EC-0.69 eV and EC-1.0 eV. The EC-0.69 eV concentration tracked oxygen incorporation while the other levels decreased while the oxygen incorporation increased indicating possible secondary offcut effects. In general, we find a direct correlation between reduced carrier compensation, increased carrier mobility, lower trap concentration and lower oxygen content as a function of systematic changes in substrate offcut conditions.
{"title":"Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells","authors":"A. Arehart, M. Brenner, Z. Zhang, K. Swaminathan, S. Ringel","doi":"10.1109/PVSC.2010.5616430","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616430","url":null,"abstract":"Deep levels in solid-source MBE-grown n- and p-type (Al0.09Ga0.91)0.51In0.49P are investigated using deep level transient spectroscopy (DLTS). These results are correlated with background oxygen impurities measured by secondary ion mass spectroscopy and electrical properties using Hall effect. Oxygen impurity concentration is found to depend weakly on substrate offcut conditions in MBE-grown AlGaInP films. This is used to investigate the role of oxygen on deep levels in the n- and p-type samples using (100) GaAs substrates with three different substrate offcut conditions (A, B, and C). The DLTS of n-type AlGaInP reveals deep levels at EC-0.22, EC-0.31, EC-0.69 eV and EC-1.0 eV. The EC-0.69 eV concentration tracked oxygen incorporation while the other levels decreased while the oxygen incorporation increased indicating possible secondary offcut effects. In general, we find a direct correlation between reduced carrier compensation, increased carrier mobility, lower trap concentration and lower oxygen content as a function of systematic changes in substrate offcut conditions.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"49 1","pages":"001999-002001"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74096012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616824
A. Golnas, S. Voss
The recent growth of the number and cumulative size of PV installations in regions with solar-friendly programs has raised the profile of those systems' potential impact on the electric grid. As grid-tied PV systems are a variable resource, it is important to characterize the variability of their output when aggregated over fleets within a service territory. SunEdison operates more than 300 systems ranging from 30 to 9,000 kWp across North America and monitors the power output of each one with a 1-minute resolution. We present an analysis of the observed power output variability of 67 PV systems across 3 utility service territories in California and New Jersey, during days of variable solar resource. One of the metrics is the standard deviation of the power output's change over 1-minute intervals across 4 hours near the solar peak. By aggregating power output over fleets of constant rated capacity but different make up, we show that variability is affected by both mean system size and fleet composition.
{"title":"Power output variability of PV system fleets in three utility service territories in New Jersey and California","authors":"A. Golnas, S. Voss","doi":"10.1109/PVSC.2010.5616824","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616824","url":null,"abstract":"The recent growth of the number and cumulative size of PV installations in regions with solar-friendly programs has raised the profile of those systems' potential impact on the electric grid. As grid-tied PV systems are a variable resource, it is important to characterize the variability of their output when aggregated over fleets within a service territory. SunEdison operates more than 300 systems ranging from 30 to 9,000 kWp across North America and monitors the power output of each one with a 1-minute resolution. We present an analysis of the observed power output variability of 67 PV systems across 3 utility service territories in California and New Jersey, during days of variable solar resource. One of the metrics is the standard deviation of the power output's change over 1-minute intervals across 4 hours near the solar peak. By aggregating power output over fleets of constant rated capacity but different make up, we show that variability is affected by both mean system size and fleet composition.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"12 1","pages":"000535-000539"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79104301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616871
L. Pratt, D. King
Predicting photovoltaic array performance is an important part of system design and monitoring, so it's important to quantify the uncertainty associated with the predictions. The Sandia Array Performance Model [1] is one of many tools used to predict annual energy production, but the effect of the uncertainty in model coefficients has not been fully investigated. This paper quantifies the relative importance of voltage and current temperature coefficients, as well as the coefficients relating voltage and current to solar irradiance, for crystalline silicon modules. Using the coefficient variation observed in the Sandia module database and computer simulation, the effect of the uncertainty was quantified in terms of the range in predicted annual energy production relative to actual energy production by three small grid-connected PV systems. The relative importance of each coefficient by month of the year was also determined in order to understand the seasonal behavior of the performance model.
{"title":"The effect of uncertainty in modeling coefficients used to predict energy production using the Sandia Array Performance Model","authors":"L. Pratt, D. King","doi":"10.1109/PVSC.2010.5616871","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616871","url":null,"abstract":"Predicting photovoltaic array performance is an important part of system design and monitoring, so it's important to quantify the uncertainty associated with the predictions. The Sandia Array Performance Model [1] is one of many tools used to predict annual energy production, but the effect of the uncertainty in model coefficients has not been fully investigated. This paper quantifies the relative importance of voltage and current temperature coefficients, as well as the coefficients relating voltage and current to solar irradiance, for crystalline silicon modules. Using the coefficient variation observed in the Sandia module database and computer simulation, the effect of the uncertainty was quantified in terms of the range in predicted annual energy production relative to actual energy production by three small grid-connected PV systems. The relative importance of each coefficient by month of the year was also determined in order to understand the seasonal behavior of the performance model.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"12 1","pages":"002718-002723"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79272594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615829
S. Ransome
Several recent independent kWh/kWp studies have found similar energy yields (<±5%) for various c-Si and thin films without any consistent technology bias [1]. A comparison of various modelling methods such as the matrix method, 1 or 2 diode models, SV method and empirical equations has been performed to see how they predict PV performance. The values of thermal and low light level coefficients used in some simulation models have been found to be different from what is measured to IEC standards [2], [3], [4]. These discrepancies mean simulation programs often predict larger variations between technologies and usually favouring thin films [5]. Suggestions are made as to the best way to predict and validate system performance.
{"title":"Comparing PV simulation models and methods with outdoor measurements","authors":"S. Ransome","doi":"10.1109/PVSC.2010.5615829","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615829","url":null,"abstract":"Several recent independent kWh/kWp studies have found similar energy yields (<±5%) for various c-Si and thin films without any consistent technology bias [1]. A comparison of various modelling methods such as the matrix method, 1 or 2 diode models, SV method and empirical equations has been performed to see how they predict PV performance. The values of thermal and low light level coefficients used in some simulation models have been found to be different from what is measured to IEC standards [2], [3], [4]. These discrepancies mean simulation programs often predict larger variations between technologies and usually favouring thin films [5]. Suggestions are made as to the best way to predict and validate system performance.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"88 1","pages":"002306-002311"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84308829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614439
G. Makrides, B. Zinsser, G. Georghiou, M. Schubert, J. Werner
Over the past years a number of testing facilities have been monitoring the performance and degradation of PV systems according to the established standards of indoor and outdoor testing. The objective of this paper is to present the initial first year and longer-term rate of degradation of different PV technologies installed at the testing facility of the University of Cyprus, based on outdoor field measurements and methodologies. The first year degradation of the technologies was obtained using a data filtering technique of DC generated power at Maximum Power Point (MPP) at irradiation points of higher than 800 W/m2 and normalising the measured power to Standard Test Conditions (STC). Over the first year, mono-crystalline silicon technologies showed degradations in the range 2.12 % – 4.73 % while for multi-crystalline technologies the range was 1.47 % – 2.40 %. The amorphous silicon system demonstrated the highest first year decrease in power with an average degradation of 13.82 %. For validation purposes the first year degradation was also obtained using a second technique by evaluating outdoor measured data-sets under Air Mass (AM) 1.5 (morning and afternoon) conditions and during noon (high irradiance and temperature). In this case the evaluated results showed deviations of up to 6 % and 3 % for mono-crystalline and multi-crystalline technologies respectively whereas for thin-film this was 5 %. Finally, the longer-term degradation rates were evaluated by using the least-square fit method on average monthly data-set blocks of (i) Performance Ratio (PR), (ii) PR evaluated by filtering outage data-sets and restricting to high irradiance conditions and (iii) the Photovoltaic for Utility Systems Applications (PVUSA) rating methods, for the period June 2007 – June 2009.
{"title":"Degradation of different photovoltaic technologies under field conditions","authors":"G. Makrides, B. Zinsser, G. Georghiou, M. Schubert, J. Werner","doi":"10.1109/PVSC.2010.5614439","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614439","url":null,"abstract":"Over the past years a number of testing facilities have been monitoring the performance and degradation of PV systems according to the established standards of indoor and outdoor testing. The objective of this paper is to present the initial first year and longer-term rate of degradation of different PV technologies installed at the testing facility of the University of Cyprus, based on outdoor field measurements and methodologies. The first year degradation of the technologies was obtained using a data filtering technique of DC generated power at Maximum Power Point (MPP) at irradiation points of higher than 800 W/m2 and normalising the measured power to Standard Test Conditions (STC). Over the first year, mono-crystalline silicon technologies showed degradations in the range 2.12 % – 4.73 % while for multi-crystalline technologies the range was 1.47 % – 2.40 %. The amorphous silicon system demonstrated the highest first year decrease in power with an average degradation of 13.82 %. For validation purposes the first year degradation was also obtained using a second technique by evaluating outdoor measured data-sets under Air Mass (AM) 1.5 (morning and afternoon) conditions and during noon (high irradiance and temperature). In this case the evaluated results showed deviations of up to 6 % and 3 % for mono-crystalline and multi-crystalline technologies respectively whereas for thin-film this was 5 %. Finally, the longer-term degradation rates were evaluated by using the least-square fit method on average monthly data-set blocks of (i) Performance Ratio (PR), (ii) PR evaluated by filtering outage data-sets and restricting to high irradiance conditions and (iii) the Photovoltaic for Utility Systems Applications (PVUSA) rating methods, for the period June 2007 – June 2009.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"4 1","pages":"002332-002337"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84792310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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