Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614523
J. Olson
Optics for high concentration photovoltaics often delivers a non-uniform irradiance to the cell. This can be a problem for tunnel-junction interconnected (TJIC) IIIV multijunction solar cells if the resulting local photocurrent exceeds the peak tunneling current density. Current spreading in the vicinity of the tunnel junction can mitigate this effect. We use commercial software to simulate current spreading in a simple GaInP/GaInAs cell with a thin GaAs TJIC. We show that for the narrow light beams, the current spreading is fit reasonably well by a Lorentzian with a spreading length on the order of 10 µm. Below some critical irradiance that depends on the width of the light beam, current spreading increases with the local irradiance. At the critical irradiance where the tunnel diode switches to the thermal current state, the current spreading abruptly decreases. Above the critical irradiance the current spreading continues to decrease with increasing irradiance. The effects of other device parameters on current spreading are discussed.
{"title":"Simulation of nonuniform irradiance in multijunction IIIV solar cells","authors":"J. Olson","doi":"10.1109/PVSC.2010.5614523","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614523","url":null,"abstract":"Optics for high concentration photovoltaics often delivers a non-uniform irradiance to the cell. This can be a problem for tunnel-junction interconnected (TJIC) IIIV multijunction solar cells if the resulting local photocurrent exceeds the peak tunneling current density. Current spreading in the vicinity of the tunnel junction can mitigate this effect. We use commercial software to simulate current spreading in a simple GaInP/GaInAs cell with a thin GaAs TJIC. We show that for the narrow light beams, the current spreading is fit reasonably well by a Lorentzian with a spreading length on the order of 10 µm. Below some critical irradiance that depends on the width of the light beam, current spreading increases with the local irradiance. At the critical irradiance where the tunnel diode switches to the thermal current state, the current spreading abruptly decreases. Above the critical irradiance the current spreading continues to decrease with increasing irradiance. The effects of other device parameters on current spreading are discussed.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"45 1","pages":"000201-000204"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77738933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616890
K. F. Chen, C. Liou, C. H. Lee, F. Chen
We fabricated TiO2/N719 dye/PVB base solid state electrolyte DSSC which with efficiency 3.75% in average that can be further optimized and the best efficiency we achieved is 5.20%. To optimize the performance of a solid state DSSC device, the work we have done including the relation between PVB immersed time and the ion conductivity of ion PVB, the incident photon-to-current efficiency (IPCE) test of the PVB base DSSC, and the long-term stability test. This is the first attempt to combine the worldwide used material, PVB, and dye-sensitized solar cell successfully. With the work other groups done before, we can increase the capabilities and values of smart windows with no doubt.
{"title":"Development of solid polymeric electrolyte for DSSC device","authors":"K. F. Chen, C. Liou, C. H. Lee, F. Chen","doi":"10.1109/PVSC.2010.5616890","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616890","url":null,"abstract":"We fabricated TiO2/N719 dye/PVB base solid state electrolyte DSSC which with efficiency 3.75% in average that can be further optimized and the best efficiency we achieved is 5.20%. To optimize the performance of a solid state DSSC device, the work we have done including the relation between PVB immersed time and the ion conductivity of ion PVB, the incident photon-to-current efficiency (IPCE) test of the PVB base DSSC, and the long-term stability test. This is the first attempt to combine the worldwide used material, PVB, and dye-sensitized solar cell successfully. With the work other groups done before, we can increase the capabilities and values of smart windows with no doubt.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"003288-003290"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77752381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616636
Xuesong Lu, Susan R. Huang, M. Diaz, R. Opila, A. Barnett
Gallium Phosphide (GaP) solar cells have been designed, fabricated, characterized and analyzed as candidates for the top junction solar cell in a multi-junction solar cell system. Liquid phase epitaxy (LPE) has been used as the growth method for the epitaxial layers. Open circuit voltage (Voc) of 1.535V has been achieved under one sun illumination from the outdoor test. Quantum efficiency (QE) measurements were used in characterizing our solar cell devices. The QE analysis results show that the high front surface recombination velocity and the low diffusion length in the n-type epi-layer region are the two major limitations for the low Voc and short circuit current density (Jsc). An improved structure has been designed based on our current experimental results.
{"title":"Wide band gap Gallium Phosphide solar cells for multi-junction solar cell system","authors":"Xuesong Lu, Susan R. Huang, M. Diaz, R. Opila, A. Barnett","doi":"10.1109/PVSC.2010.5616636","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616636","url":null,"abstract":"Gallium Phosphide (GaP) solar cells have been designed, fabricated, characterized and analyzed as candidates for the top junction solar cell in a multi-junction solar cell system. Liquid phase epitaxy (LPE) has been used as the growth method for the epitaxial layers. Open circuit voltage (Voc) of 1.535V has been achieved under one sun illumination from the outdoor test. Quantum efficiency (QE) measurements were used in characterizing our solar cell devices. The QE analysis results show that the high front surface recombination velocity and the low diffusion length in the n-type epi-layer region are the two major limitations for the low Voc and short circuit current density (Jsc). An improved structure has been designed based on our current experimental results.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"98 1","pages":"002079-002083"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79257297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614367
C. Solanki, Siddharth Mudaliar
The objective of this paper is to describe the Solar PV market with regards to products like solar lanterns, home lighting systems, power packs especially in the rural context of developing countries. Steps taken by some companies in trying to reach the rural market with solar PV product for matching the needs of the rural regions in India are described. In the study of rural PV market two divergent views exist, providing a mass-manufactured product at very low prices and the other of customized solutions supported by soft-financing options through rural banks. While mass produced solar PV products (SPP) may deliver economies of scale bringing down costs, does it guarantee quick sales and user benefits? On the other hand delivering customized solutions to the user may guarantee sales, financing the solution is a difficult and a long-drawn process, casting a doubt on its ability to scale up. An alternative strategy is developed that targets the rural rich rather than the traditional bottom of pyramid users. Its rationale is explained.
{"title":"Strategies to target rural PV market in developing countries - a perspective","authors":"C. Solanki, Siddharth Mudaliar","doi":"10.1109/PVSC.2010.5614367","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614367","url":null,"abstract":"The objective of this paper is to describe the Solar PV market with regards to products like solar lanterns, home lighting systems, power packs especially in the rural context of developing countries. Steps taken by some companies in trying to reach the rural market with solar PV product for matching the needs of the rural regions in India are described. In the study of rural PV market two divergent views exist, providing a mass-manufactured product at very low prices and the other of customized solutions supported by soft-financing options through rural banks. While mass produced solar PV products (SPP) may deliver economies of scale bringing down costs, does it guarantee quick sales and user benefits? On the other hand delivering customized solutions to the user may guarantee sales, financing the solution is a difficult and a long-drawn process, casting a doubt on its ability to scale up. An alternative strategy is developed that targets the rural rich rather than the traditional bottom of pyramid users. Its rationale is explained.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"40 1","pages":"002392-002396"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81500021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615872
V. Popovich, W. Verwaal, M. Janssen, I. Bennett, I. Richardson
The present study outlines the characterization of the internal microstructure in a multicrystalline silicon solar cell, by means of a powerful non-intrusive experimental method, namely X-ray computed tomography. The purpose of this research is to give a better understanding of the silicon solar cells metallization layers and defects related to its processing. Resulting tomographic images showed the distribution of bismuth glass and porosity in Al and Ag contact layers. At the same time, 3D tomographic images revealed the presence of process induced defects. In this work the usefulness of the CT technique for the in depth study of silicon solar cells is shown.
{"title":"Application of X-ray computed tomography in silicon solar cells","authors":"V. Popovich, W. Verwaal, M. Janssen, I. Bennett, I. Richardson","doi":"10.1109/PVSC.2010.5615872","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615872","url":null,"abstract":"The present study outlines the characterization of the internal microstructure in a multicrystalline silicon solar cell, by means of a powerful non-intrusive experimental method, namely X-ray computed tomography. The purpose of this research is to give a better understanding of the silicon solar cells metallization layers and defects related to its processing. Resulting tomographic images showed the distribution of bismuth glass and porosity in Al and Ag contact layers. At the same time, 3D tomographic images revealed the presence of process induced defects. In this work the usefulness of the CT technique for the in depth study of silicon solar cells is shown.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"001759-001764"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81623878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614601
Dl Liu, Sh. Liu, C. Panetta, K. Olson, Sm Hong, D. Alaan, C. Mann, K. Luey
As the power generation capability of solar cells depends strongly on the spectra of the incident light through the coverglass, there is a critical need to understand the impact of adsorbed molecular (organic) contaminants, which absorb light in the short wavelength range. The goal of this work is to calculate solar cell current loss based on experimentally determined coverglass transmission change in the presence of contaminant films. Two representative contaminants, di-octyl phthalate (DOP) and DC704, were photo-fixed on the coverglass samples, which were subsequently irradiated with protons under a simulated 15-year GEO space radiation environment. The coverglass transmission change was characterized before and after each process. The coverglass transmission data were then convolved with the solar cell spectral response to determine the coverglass darkening effects on solar cell performance. The results indicate that the solar cell current could be significantly reduced due to the combined effects of contamination and proton exposure.
{"title":"Effects of contamination on solar cell coverglass","authors":"Dl Liu, Sh. Liu, C. Panetta, K. Olson, Sm Hong, D. Alaan, C. Mann, K. Luey","doi":"10.1109/PVSC.2010.5614601","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614601","url":null,"abstract":"As the power generation capability of solar cells depends strongly on the spectra of the incident light through the coverglass, there is a critical need to understand the impact of adsorbed molecular (organic) contaminants, which absorb light in the short wavelength range. The goal of this work is to calculate solar cell current loss based on experimentally determined coverglass transmission change in the presence of contaminant films. Two representative contaminants, di-octyl phthalate (DOP) and DC704, were photo-fixed on the coverglass samples, which were subsequently irradiated with protons under a simulated 15-year GEO space radiation environment. The coverglass transmission change was characterized before and after each process. The coverglass transmission data were then convolved with the solar cell spectral response to determine the coverglass darkening effects on solar cell performance. The results indicate that the solar cell current could be significantly reduced due to the combined effects of contamination and proton exposure.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"81 1","pages":"002563-002568"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81709389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5616815
W. Bower, S. Kuszmaul, S. Gonzalez, A. Akhil
This paper provides an overview of the activities of and progress made in the US DOE Solar Energy Grid Integration Systems (SEGIS) program. The work has now progressed from the “Conceptual Designs and Market Analysis” Stage 1 through the “Prototype Development” Stage 2. Twelve contractors completed the Stage 1 conceptual designs and market analysis. Best value competition resulted follow on work with control methodologies and hardware prototypes developed and completed by five contractors. The prototypes span system sizes from micro-inverters (200W) to commercial sizes through 100kW. Modularity of the designs enables larger applications. This SEGIS R&D is opening pathways for connecting PV systems to emerging intelligent utility grids and micro-grids. In addition to new grid-interconnection capabilities and “value added” features, the new hardware designs result in smaller, less material-intensive, and higher reliability products. The solutions and “value added” enabled by SEGIS systems will help drive the “advanced integrated system” concepts and “smart grid” evolutionary processes forward in a faster and more focused manner.[1,2,3]
{"title":"Solar Energy Grid Integration Systems (SEGIS) proactive intelligent advances for photovotaic systems","authors":"W. Bower, S. Kuszmaul, S. Gonzalez, A. Akhil","doi":"10.1109/PVSC.2010.5616815","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5616815","url":null,"abstract":"This paper provides an overview of the activities of and progress made in the US DOE Solar Energy Grid Integration Systems (SEGIS) program. The work has now progressed from the “Conceptual Designs and Market Analysis” Stage 1 through the “Prototype Development” Stage 2. Twelve contractors completed the Stage 1 conceptual designs and market analysis. Best value competition resulted follow on work with control methodologies and hardware prototypes developed and completed by five contractors. The prototypes span system sizes from micro-inverters (200W) to commercial sizes through 100kW. Modularity of the designs enables larger applications. This SEGIS R&D is opening pathways for connecting PV systems to emerging intelligent utility grids and micro-grids. In addition to new grid-interconnection capabilities and “value added” features, the new hardware designs result in smaller, less material-intensive, and higher reliability products. The solutions and “value added” enabled by SEGIS systems will help drive the “advanced integrated system” concepts and “smart grid” evolutionary processes forward in a faster and more focused manner.[1,2,3]","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"18 1","pages":"000523-000528"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81800327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5615869
S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters
We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.
{"title":"Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells","authors":"S. Maximenko, S. Messenger, C. Cress, M. González, J. A. Freitas, R. Walters","doi":"10.1109/PVSC.2010.5615869","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5615869","url":null,"abstract":"We report the results of the characterization of irradiated InGaP2/GaAs/Ge multijunction (MJ) solar cells using the cathodoluminescence (CL) imaging/spectroscopy and electron beam induced current (EBIC) modes of scanning electron microscopy (SEM). These techniques were applied to verify the influence of irradiation damage on the optoelectronic properties of each subcell triple junction structure and correlate illuminated (AM0, 1 sun, 25°C) currentquantum efficiency (QE) characteristics.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"001753-001758"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85284170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5614652
L. Reichertz, I. Gherasoiu, K. Yu, J. Ager, V. M. Kao, W. Walukiewicz
We report on the progress towards a high efficiency InGaN/Si tandem hybrid solar cell. The proof of principle has been demonstrated in a 5 × 5 mm III-nitride/Si dual junction solar cell, with p/n GaN junction grown by molecular beam epitaxy (MBE) functioning as the top cell and a standard n-type Si wafer with an Al doped p-type surface functioning as the bottom cell. An open circuit voltage (Voc) of 2.5 V was measured under 1× AM1.5G illumination conditions with additional UV laser illumination of the GaN junction. The quantum efficiency spectra show that both junctions are active and working in series. The 1x sun conversion efficiency of the GaN/Si tandem cell is limited to less than 1% due to the large band gap of GaN not being matched to the solar spectrum. Ongoing work is therefore focused on lowering the bandgap of the top cell to an optimum of about 1.8 eV by increasing the indium content of the top InGaN cell in order to match the current of the Si bottom cell under solar illumination. Very recently, we have achieved PV action in the first InGaN/Si hybrid cells. The remaining challenge lies in maintaining a high quality pn- junction in InGaN as the In fraction has to be increased towards 45%.
{"title":"Progress on III-nitride/silicon hybrid multijunction solar cells","authors":"L. Reichertz, I. Gherasoiu, K. Yu, J. Ager, V. M. Kao, W. Walukiewicz","doi":"10.1109/PVSC.2010.5614652","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5614652","url":null,"abstract":"We report on the progress towards a high efficiency InGaN/Si tandem hybrid solar cell. The proof of principle has been demonstrated in a 5 × 5 mm III-nitride/Si dual junction solar cell, with p/n GaN junction grown by molecular beam epitaxy (MBE) functioning as the top cell and a standard n-type Si wafer with an Al doped p-type surface functioning as the bottom cell. An open circuit voltage (Voc) of 2.5 V was measured under 1× AM1.5G illumination conditions with additional UV laser illumination of the GaN junction. The quantum efficiency spectra show that both junctions are active and working in series. The 1x sun conversion efficiency of the GaN/Si tandem cell is limited to less than 1% due to the large band gap of GaN not being matched to the solar spectrum. Ongoing work is therefore focused on lowering the bandgap of the top cell to an optimum of about 1.8 eV by increasing the indium content of the top InGaN cell in order to match the current of the Si bottom cell under solar illumination. Very recently, we have achieved PV action in the first InGaN/Si hybrid cells. The remaining challenge lies in maintaining a high quality pn- junction in InGaN as the In fraction has to be increased towards 45%.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"19 1","pages":"001044-001047"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76857288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-06-20DOI: 10.1109/PVSC.2010.5617199
B. Wacaser, M. Khayyat, M. Reuter, D. Sadana, F. Ross
A promising field for future low cost, medium efficiency solar cell devices is the use of vapor-liquid-solid (VLS) grown nanowires or micropillars (NWs referring to both) as the active region of large scale (greater than 1 mm2 area) photovoltaic devices. There are several advantages of using NWs. The NWs can be doped as grown, helping with formation of a PV structure. NW-based PV structures require shorter carrier diffusion distances than are needed for a similarly thick planar absorber layer. At the same time, due to scattering and other optical phenomena the NW structure is able to trap more light and improve the overall light absorption. This, combined with the ability to grow nanowires on cheap substrates or reuse the growth substrate multiple times, makes NWs promising for future generation PV devices. In order for NWs to perform to their full potential several technical challenges need to be overcome. In this paper we will discuss these technical challenges in conjunction with the advantages of using NWs in large scale PV devices. We will also outline the progress that we and others have made in overcoming these challenges on the way to making nanowires a viable PV technology.
{"title":"Technical advantages and challenges for core-shell micro/ nanowire large area PV devices","authors":"B. Wacaser, M. Khayyat, M. Reuter, D. Sadana, F. Ross","doi":"10.1109/PVSC.2010.5617199","DOIUrl":"https://doi.org/10.1109/PVSC.2010.5617199","url":null,"abstract":"A promising field for future low cost, medium efficiency solar cell devices is the use of vapor-liquid-solid (VLS) grown nanowires or micropillars (NWs referring to both) as the active region of large scale (greater than 1 mm2 area) photovoltaic devices. There are several advantages of using NWs. The NWs can be doped as grown, helping with formation of a PV structure. NW-based PV structures require shorter carrier diffusion distances than are needed for a similarly thick planar absorber layer. At the same time, due to scattering and other optical phenomena the NW structure is able to trap more light and improve the overall light absorption. This, combined with the ability to grow nanowires on cheap substrates or reuse the growth substrate multiple times, makes NWs promising for future generation PV devices. In order for NWs to perform to their full potential several technical challenges need to be overcome. In this paper we will discuss these technical challenges in conjunction with the advantages of using NWs in large scale PV devices. We will also outline the progress that we and others have made in overcoming these challenges on the way to making nanowires a viable PV technology.","PeriodicalId":6424,"journal":{"name":"2010 35th IEEE Photovoltaic Specialists Conference","volume":"15 1","pages":"003352-003356"},"PeriodicalIF":0.0,"publicationDate":"2010-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77091545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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