Pub Date : 2016-05-27DOI: 10.1109/MWSYM.2016.7540308
Chao Yu, Honglei Sun, Xiaowei Zhu, W. Hong, A. Zhu
In this paper, a channelized sideband distortion model is proposed to suppress the unwanted emission of Q-band millimeter wave (mmWave) transmitters in wideband contiguous carrier aggregation scenarios. By employing this model, the compensating bandwidth or center frequency can be agilely controlled. Experiments were conducted on a 40 GHz mmWave power amplifier to validate this idea. The satisfactory performance proved that the proposed model is a promising candidate for future 5G applications.
{"title":"A channelized sideband distortion model for suppressing unwanted emission of Q-band millimeter wave transmitters","authors":"Chao Yu, Honglei Sun, Xiaowei Zhu, W. Hong, A. Zhu","doi":"10.1109/MWSYM.2016.7540308","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540308","url":null,"abstract":"In this paper, a channelized sideband distortion model is proposed to suppress the unwanted emission of Q-band millimeter wave (mmWave) transmitters in wideband contiguous carrier aggregation scenarios. By employing this model, the compensating bandwidth or center frequency can be agilely controlled. Experiments were conducted on a 40 GHz mmWave power amplifier to validate this idea. The satisfactory performance proved that the proposed model is a promising candidate for future 5G applications.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"43 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73414832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540360
Tao Yang, Gabriel M. Rebeiz
In this paper, a very compact tunable diplexer is proposed with controllable transmission zeros and controllable output isolation levels. The two channels in the diplexer can be independently tuned and cover a tuning range from 1.9GHz to 3.4 GHz. Controllable transmission zeros are introduced in each channel by using the source-to-loading coupling. The introduced transmission zeros cannot only be used to improve the channel selectivity, but also used to improve the output isolation levels during frequency tuning. An output isolation level of >48 dB is achieved during each tuning state.
{"title":"A compact 1.9–3.4GHz diplexer with controllable transmission zeros, improved isolation, and constant fractional bandwidth","authors":"Tao Yang, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2016.7540360","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540360","url":null,"abstract":"In this paper, a very compact tunable diplexer is proposed with controllable transmission zeros and controllable output isolation levels. The two channels in the diplexer can be independently tuned and cover a tuning range from 1.9GHz to 3.4 GHz. Controllable transmission zeros are introduced in each channel by using the source-to-loading coupling. The introduced transmission zeros cannot only be used to improve the channel selectivity, but also used to improve the output isolation levels during frequency tuning. An output isolation level of >48 dB is achieved during each tuning state.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73456666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540009
A. Muller, A. Stavrinidis, I. Giangu, A. Stefanescu, G. Stavrinidis, A. Pantazis, A. Dinescu, G. Boldeiu, G. Konstantinidis
Two different novel SAW type pressure sensing structures were manufactured using micromachining and nanolihographic processes: SAW supported on a GaN/Si (1.2 μm/ 10 μm) membrane for the first type structure and SAW supported on a 1.2 μm thin GaN membrane for the second type. The two resonance peaks observed for both structures were identified, using wave shape simulations, as Rayleigh mode and symmetric Lamb mode, respectively. The resonance frequency shift vs. pressure (measured in the 1-5 Bar range), as well as the pressure sensitivity and its sign have been analyzed for both structures and both peaks. High absolute values of the sensitivity (in the range 346...2680 kHz/Bar) and of the pressure coefficient of frequency (in the range 66...278 ppm/Bar) have been obtained. It was demonstrated that the second type structures and the Lamb mode are more pressure sensitive.
{"title":"High sensitivity, GHz operating SAW pressure sensor structures manufactured by micromachining and nano-processing of GaN/Si","authors":"A. Muller, A. Stavrinidis, I. Giangu, A. Stefanescu, G. Stavrinidis, A. Pantazis, A. Dinescu, G. Boldeiu, G. Konstantinidis","doi":"10.1109/MWSYM.2016.7540009","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540009","url":null,"abstract":"Two different novel SAW type pressure sensing structures were manufactured using micromachining and nanolihographic processes: SAW supported on a GaN/Si (1.2 μm/ 10 μm) membrane for the first type structure and SAW supported on a 1.2 μm thin GaN membrane for the second type. The two resonance peaks observed for both structures were identified, using wave shape simulations, as Rayleigh mode and symmetric Lamb mode, respectively. The resonance frequency shift vs. pressure (measured in the 1-5 Bar range), as well as the pressure sensitivity and its sign have been analyzed for both structures and both peaks. High absolute values of the sensitivity (in the range 346...2680 kHz/Bar) and of the pressure coefficient of frequency (in the range 66...278 ppm/Bar) have been obtained. It was demonstrated that the second type structures and the Lamb mode are more pressure sensitive.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73040246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540424
A. P. Saghati, J. Batra, J. Kameoka, K. Entesari
This paper presents a miniature wide-band interferometry sensor for dielectric spectroscopy and detection of liquid chemicals based on utilizing two composite right/left-handed (CRLH) transmission lines (TLs) in a zero-IF mixing configuration. The equivalent series capacitance of the CRLH TLs, constructed by using microstrip interdigital capacitors, is loaded with microfluidic channels, and exposed to the material under test (MUT) to act as the sensing element. Due to the nonlinear dispersion relation of the artificial TLs with respect to the sensing capacitor, higher sensitivity over a frequency band as wide as 4-8 GHz is achieved, compared to the previously-reported resonator- or capacitor-based sensors. The final fabricated system prototype is 4 cm×8 cm. Moreover, a calibration method is presented based on measurement results, which shows an rms error less than ~1.5% for liquid-chemical permittivity detection. To the best of author's knowledge, this is the first disclosure of wide-band and highly-sensitive microwave interferometry sensor suitable for portable lab-on-board applications.
{"title":"A metamaterial-inspired miniaturized wide-band microwave interferometry sensor for liquid chemical detection","authors":"A. P. Saghati, J. Batra, J. Kameoka, K. Entesari","doi":"10.1109/MWSYM.2016.7540424","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540424","url":null,"abstract":"This paper presents a miniature wide-band interferometry sensor for dielectric spectroscopy and detection of liquid chemicals based on utilizing two composite right/left-handed (CRLH) transmission lines (TLs) in a zero-IF mixing configuration. The equivalent series capacitance of the CRLH TLs, constructed by using microstrip interdigital capacitors, is loaded with microfluidic channels, and exposed to the material under test (MUT) to act as the sensing element. Due to the nonlinear dispersion relation of the artificial TLs with respect to the sensing capacitor, higher sensitivity over a frequency band as wide as 4-8 GHz is achieved, compared to the previously-reported resonator- or capacitor-based sensors. The final fabricated system prototype is 4 cm×8 cm. Moreover, a calibration method is presented based on measurement results, which shows an rms error less than ~1.5% for liquid-chemical permittivity detection. To the best of author's knowledge, this is the first disclosure of wide-band and highly-sensitive microwave interferometry sensor suitable for portable lab-on-board applications.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"63 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74409520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540331
J. Grosinger, Lukas Gortschacher, W. Bosch
The paper presents an antenna transducer prototype at 915MHz for a batteryless ultra high frequency (UHF) radio frequency identification (RFID) transponder (tag) sensor add-on. By using low cost and low maintenance batteryless RFID sensor tags in a home environment, a low cost internet of things (IoT) infrastructure can be provided. The batteryless or rather passive UHF RFID sensor tag is realized by using the tag antenna as the sensing device. The prototyped antenna transducer allows to detect three specific water filling levels in a can to sense for example the filling level of a coffee machine in a smart home environment. The transducer prototype provides a high efficiency of 92%and thus guarantees for the first time a reliable and stable power supply to the passive RFID tag chip at each sensing state.
{"title":"Sensor add-on for batteryless UHF RFID tags enabling a low cost IoT infrastructure","authors":"J. Grosinger, Lukas Gortschacher, W. Bosch","doi":"10.1109/MWSYM.2016.7540331","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540331","url":null,"abstract":"The paper presents an antenna transducer prototype at 915MHz for a batteryless ultra high frequency (UHF) radio frequency identification (RFID) transponder (tag) sensor add-on. By using low cost and low maintenance batteryless RFID sensor tags in a home environment, a low cost internet of things (IoT) infrastructure can be provided. The batteryless or rather passive UHF RFID sensor tag is realized by using the tag antenna as the sensing device. The prototyped antenna transducer allows to detect three specific water filling levels in a can to sense for example the filling level of a coffee machine in a smart home environment. The transducer prototype provides a high efficiency of 92%and thus guarantees for the first time a reliable and stable power supply to the passive RFID tag chip at each sensing state.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78397562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540202
Xuan Anh Nghiem, R. Negra
This paper presents the design of a high power, broadband sequential power amplifier with Doherty-type active load modulation (SPA-D) for DVB-T applications. By designing the SPA-D at device level, the bandwidth limitation due to device parasitics and the frequency dependence of peaking output impedance can be mitigated. External capacitors are used in combination with the device output capacitances and package parasitics to form very short transmission lines (TL) having characteristic impedances of the corresponding device optimum impedances. In this way, the fractional bandwidth (FB) of SPA-D can be extended up to 60%. The high power SPA-D demonstrator exhibits measured drain efficiency of 45%-67.5% at 8 - 10 dB power back-off (BO) and 54%-79% at peak power of ≥ 100 W over 460 MHz-830 MHz (~ 57% FB). At 710 MHz, a measured power added efficiency (PAE) of 70 % and 62.5 %are achieved at 50.5 dBm output power and 8 dB BO, respectively. To the best of our knowledge, this PA has the highest performance in terms of efficiency and bandwidth for DVB-T application to date.
{"title":"A 100 W GaN HEMT SPA-D with 57% fractional bandwidth for DVB-T applications","authors":"Xuan Anh Nghiem, R. Negra","doi":"10.1109/MWSYM.2016.7540202","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540202","url":null,"abstract":"This paper presents the design of a high power, broadband sequential power amplifier with Doherty-type active load modulation (SPA-D) for DVB-T applications. By designing the SPA-D at device level, the bandwidth limitation due to device parasitics and the frequency dependence of peaking output impedance can be mitigated. External capacitors are used in combination with the device output capacitances and package parasitics to form very short transmission lines (TL) having characteristic impedances of the corresponding device optimum impedances. In this way, the fractional bandwidth (FB) of SPA-D can be extended up to 60%. The high power SPA-D demonstrator exhibits measured drain efficiency of 45%-67.5% at 8 - 10 dB power back-off (BO) and 54%-79% at peak power of ≥ 100 W over 460 MHz-830 MHz (~ 57% FB). At 710 MHz, a measured power added efficiency (PAE) of 70 % and 62.5 %are achieved at 50.5 dBm output power and 8 dB BO, respectively. To the best of our knowledge, this PA has the highest performance in terms of efficiency and bandwidth for DVB-T application to date.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"94 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74974806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7538412
A. Melzer, Alexander Onic, M. Huemer
Estimation of phase noise (PN) has become economically feasible for use within integrated circuits. Several concepts have been proposed that obtain an estimate with high accuracy. However, these concepts require a continuous wave input signal during measurement. In this work we aim to estimate the PN power spectrum of a frequency modulated continuous wave (FMCW) radar transceiver simultaneously with its normal operation. The novel method obtains the PN power spectrum across the whole FMCW chirp bandwidth. It utilizes an artificial on-chip target (OCT), which is to be incorporated into an existing monolithic microwave integrated circuit (MMIC). Two concepts to obtain the PN power spectrum are presented and validated with measurements that deliver accurate estimates within the frequency range of interest.
{"title":"Phase noise estimation in FMCW radar transceivers using an artificial on-chip target","authors":"A. Melzer, Alexander Onic, M. Huemer","doi":"10.1109/MWSYM.2016.7538412","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7538412","url":null,"abstract":"Estimation of phase noise (PN) has become economically feasible for use within integrated circuits. Several concepts have been proposed that obtain an estimate with high accuracy. However, these concepts require a continuous wave input signal during measurement. In this work we aim to estimate the PN power spectrum of a frequency modulated continuous wave (FMCW) radar transceiver simultaneously with its normal operation. The novel method obtains the PN power spectrum across the whole FMCW chirp bandwidth. It utilizes an artificial on-chip target (OCT), which is to be incorporated into an existing monolithic microwave integrated circuit (MMIC). Two concepts to obtain the PN power spectrum are presented and validated with measurements that deliver accurate estimates within the frequency range of interest.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77379291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7539959
I. Wolff
Spherical resonators have been discussed in the literature since 1883, i. e. since more than 130 years. Nevertheless many problems have not been solved until today. Therefore in this paper the eigenvalues, the field distributions and the Q-factors of spherical cavity resonators in dependence on the dielectric and conductor losses are discussed. Considering the material properties of the boundary walls in the case of cavity resonators, the conversion process from a cavity structure into the case of an open dielectric sphere in vacuum is examined.
{"title":"The influence of dielectric and conductor losses on the properties of spherical resonators","authors":"I. Wolff","doi":"10.1109/MWSYM.2016.7539959","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539959","url":null,"abstract":"Spherical resonators have been discussed in the literature since 1883, i. e. since more than 130 years. Nevertheless many problems have not been solved until today. Therefore in this paper the eigenvalues, the field distributions and the Q-factors of spherical cavity resonators in dependence on the dielectric and conductor losses are discussed. Considering the material properties of the boundary walls in the case of cavity resonators, the conversion process from a cavity structure into the case of an open dielectric sphere in vacuum is examined.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"31 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77405599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540227
M. Ohira, Toshiki Kato, Zhewang Ma
A novel planar-filter realization of a fully canonical Nth-order Cul-de-Sac coupling matrix that can produce the maximum number of transmission zeros (TZs) is proposed in this paper. It is known that in general, a transversal array coupling topology that offers a generalized Chebyshev function response is hard to design in a physical structure, owing to simultaneous parallel excitation of resonators. To overcome such a drawback, this paper introduces a fully canonical Cul-de-Sac coupling that can be obtained with mathematical transformation from a transversal array coupling. The proposed filter structure for the Cul-de-Sac coupling has two resonator blocks, which are excited by two-branch lines: one is a block of even-mode half-wavelength resonators arranged in parallel to input/output lines, and the other is a block of odd-mode ones. The filter can be easily designed by coupling coefficients between two adjacent resonators without any cross couplings. The effectiveness of the proposed filter is verified with synthesis, design, and test of a 2-GHz fourth-order microstrip filter with four TZs.
{"title":"Novel microstrip realization and straightforward design of fully canonical Cul-de-Sac coupling bandpass filters","authors":"M. Ohira, Toshiki Kato, Zhewang Ma","doi":"10.1109/MWSYM.2016.7540227","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540227","url":null,"abstract":"A novel planar-filter realization of a fully canonical Nth-order Cul-de-Sac coupling matrix that can produce the maximum number of transmission zeros (TZs) is proposed in this paper. It is known that in general, a transversal array coupling topology that offers a generalized Chebyshev function response is hard to design in a physical structure, owing to simultaneous parallel excitation of resonators. To overcome such a drawback, this paper introduces a fully canonical Cul-de-Sac coupling that can be obtained with mathematical transformation from a transversal array coupling. The proposed filter structure for the Cul-de-Sac coupling has two resonator blocks, which are excited by two-branch lines: one is a block of even-mode half-wavelength resonators arranged in parallel to input/output lines, and the other is a block of odd-mode ones. The filter can be easily designed by coupling coefficients between two adjacent resonators without any cross couplings. The effectiveness of the proposed filter is verified with synthesis, design, and test of a 2-GHz fourth-order microstrip filter with four TZs.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79005875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540370
R. Ben Yishay, D. Elad
Integrated 60-GHz reflection-type phase shifter (RTPS) with near-constant insertion-loss for phased array transceivers is demonstrated in this paper. The RTPS is based on a cascaded couplers structure and implemented in a standard 0.12 μm SiGe BiCMOS process, using CMOS features only. The phase shifter is controlled by a 6-bit DAC and achieves >200° phase variation across the 57-66 GHz band with less than ±0.5 dB insertion loss variation over all phase states. The measured insertion loss at 60 GHz is 7.4 ± 0.25 dB. Measured RMS phase error is less than 2.6° and the RMS gain error is less than 0.3 dB over the 57-66 GHz range. The IC occupies area of 400 × 700 μm2 (0.28 mm2), excluding pads.
{"title":"A 57–66 GHz reflection-type phase shifter with near-constant insertion loss","authors":"R. Ben Yishay, D. Elad","doi":"10.1109/MWSYM.2016.7540370","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540370","url":null,"abstract":"Integrated 60-GHz reflection-type phase shifter (RTPS) with near-constant insertion-loss for phased array transceivers is demonstrated in this paper. The RTPS is based on a cascaded couplers structure and implemented in a standard 0.12 μm SiGe BiCMOS process, using CMOS features only. The phase shifter is controlled by a 6-bit DAC and achieves >200° phase variation across the 57-66 GHz band with less than ±0.5 dB insertion loss variation over all phase states. The measured insertion loss at 60 GHz is 7.4 ± 0.25 dB. Measured RMS phase error is less than 2.6° and the RMS gain error is less than 0.3 dB over the 57-66 GHz range. The IC occupies area of 400 × 700 μm2 (0.28 mm2), excluding pads.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"20 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79366745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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