Pub Date : 2016-12-01DOI: 10.1109/TMTT.2016.2622708
Yi-Ching Wu, Chau-Ching Chiong, Huei Wang
A novel mixer topology by using gate and drain pumped with combining drain terminals of nMOS devices is proposed to enhance LO/IF operation bandwidth in 90-nm CMOS. With 0.6 mW of dc power, this mixer achieves peak conversion gains (CGs)-6.2 dB,-6.1 dB,-8.6 dB, and-7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At LO power 2.3 dBm and LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When LO power is 4.2 dBm at LO frequency of 90 GHz, the mixer has IF 3-dB bandwidth of 16 GHz. The IP1dB is at least 2 dBm from 30 to 90 GHz. The chip occupies 0.389 mm2. Comparison with other published works, this mixer demonstrates extremely wide bandwidth LO/IF for astronomy application.
{"title":"A novel 30–90 GHz singly balanced mixer with broadband LO/IF","authors":"Yi-Ching Wu, Chau-Ching Chiong, Huei Wang","doi":"10.1109/TMTT.2016.2622708","DOIUrl":"https://doi.org/10.1109/TMTT.2016.2622708","url":null,"abstract":"A novel mixer topology by using gate and drain pumped with combining drain terminals of nMOS devices is proposed to enhance LO/IF operation bandwidth in 90-nm CMOS. With 0.6 mW of dc power, this mixer achieves peak conversion gains (CGs)-6.2 dB,-6.1 dB,-8.6 dB, and-7.2 dB at LO frequencies of 30, 50, 60, and 90 GHz, respectively. At LO power 2.3 dBm and LO frequency of 30 GHz, the IF 3-dB bandwidth is 26 GHz. When LO power is 4.2 dBm at LO frequency of 90 GHz, the mixer has IF 3-dB bandwidth of 16 GHz. The IP1dB is at least 2 dBm from 30 to 90 GHz. The chip occupies 0.389 mm2. Comparison with other published works, this mixer demonstrates extremely wide bandwidth LO/IF for astronomy application.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81472684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540174
Xiao-Feng Sun, E. L. Tan
This paper presents the dual-band filter design with pole-zero distribution in the complex frequency plane. Based on specifications, the poles and zeros of each passband can be distributed as desired, such as having poles on typical Butterworth/Bessel circle, Chebyshev ellipse, etc. This can provide different passband responses to meet different specifications of each band. In order to make more obvious the two passbands with different pole-zero distributions in the complex frequency plane, a filter is illustrated with the Butterworth response for its first band and the Chebyshev response for its second band. The simulation and measurement results are found to be in good agreement.
{"title":"Dual-band filter design with pole-zero distribution in the complex frequency plane","authors":"Xiao-Feng Sun, E. L. Tan","doi":"10.1109/MWSYM.2016.7540174","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540174","url":null,"abstract":"This paper presents the dual-band filter design with pole-zero distribution in the complex frequency plane. Based on specifications, the poles and zeros of each passband can be distributed as desired, such as having poles on typical Butterworth/Bessel circle, Chebyshev ellipse, etc. This can provide different passband responses to meet different specifications of each band. In order to make more obvious the two passbands with different pole-zero distributions in the complex frequency plane, a filter is illustrated with the Butterworth response for its first band and the Chebyshev response for its second band. The simulation and measurement results are found to be in good agreement.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"8 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72624644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540291
M. Gasper, R. Toonen, S. Hirsch, M. Ivill, H. Richter, R. Sivarajan
Carbon nanotube thin films deposited on sapphire substrates have been used to realize a microwave power sensor that operates at and above room temperature. The detector includes a power-sensitive resistor that has been incorporated into a voltage divider circuit. Using lock-in detection, experiments were performed with 915 MHz test signals that showed detection down to -45 dBm. A sensitivity of 0.36mV/mW was achieved with the device held at a temperature of 15°C. Additional experiments (which included static and pulsed current versus voltage measurements) indicate that the primary physical mechanism responsible for power detection near room temperature is Joule heating.
{"title":"Uncooled radio frequency bolometer based on carbon nanotube thin films","authors":"M. Gasper, R. Toonen, S. Hirsch, M. Ivill, H. Richter, R. Sivarajan","doi":"10.1109/MWSYM.2016.7540291","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540291","url":null,"abstract":"Carbon nanotube thin films deposited on sapphire substrates have been used to realize a microwave power sensor that operates at and above room temperature. The detector includes a power-sensitive resistor that has been incorporated into a voltage divider circuit. Using lock-in detection, experiments were performed with 915 MHz test signals that showed detection down to -45 dBm. A sensitivity of 0.36mV/mW was achieved with the device held at a temperature of 15°C. Additional experiments (which included static and pulsed current versus voltage measurements) indicate that the primary physical mechanism responsible for power detection near room temperature is Joule heating.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78290832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540215
M. del Prete, A. Costanzo, D. Masotti, T. Polonelli, M. Magno, L. Benini
To minimize energy consumption of state-of-the-art wireless sensor nodes, asynchronous communication transceivers are adopted, which make use of an ultra-low power wake-up radio (WUR) to minimize the active time of the energy-hungry main communication radio. This work contributes to the ambitious goal of pushing over the minimum average RF power needed to operate the WUR, thus enabling energy-efficient communication in larger areas. To reach this goal a dual-band rectifier, optimized to be loaded by an ultra-low power comparator, is used as WUR detector. Its behavior is experimentally tested under several power-optimized excitation formats. By selecting the proper excitation format the base-band comparator is enabled starting from average RF-power as low as -64.5 dBm.
{"title":"Experimental analysis of power optimized waveforms for enhancing wake-up radio sensitivity","authors":"M. del Prete, A. Costanzo, D. Masotti, T. Polonelli, M. Magno, L. Benini","doi":"10.1109/MWSYM.2016.7540215","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540215","url":null,"abstract":"To minimize energy consumption of state-of-the-art wireless sensor nodes, asynchronous communication transceivers are adopted, which make use of an ultra-low power wake-up radio (WUR) to minimize the active time of the energy-hungry main communication radio. This work contributes to the ambitious goal of pushing over the minimum average RF power needed to operate the WUR, thus enabling energy-efficient communication in larger areas. To reach this goal a dual-band rectifier, optimized to be loaded by an ultra-low power comparator, is used as WUR detector. Its behavior is experimentally tested under several power-optimized excitation formats. By selecting the proper excitation format the base-band comparator is enabled starting from average RF-power as low as -64.5 dBm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"120 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91541019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540356
D. Psychogiou, R. Gómez‐García, D. Peroulis
Hybrid acoustic-wave-lumped-element resonator (AWLR)-based bandpass filters (BPFs) with reconfigurable bandwidth (BW) and tunable out-of-band isolation (IS) are reported in this paper. They are based on a new BPF architecture in which the AWLRs are in-parallel cascaded to an all-pass network through variable lumped-element (LE) impedance inverters. In this manner, passbands with arbitrarily-large BW-i.e., no longer limited by the electromechanical coupling coefficient (kt2) of its constituent acoustic-wave resonators (AWRs)-can be created and continuously controlled whilst preserving the high-quality-factor (Q: order of 10,000) characteristics of the AWR. Furthermore, tuning of the out-of-band IS is obtained by adjusting the location of the AWLRs transmission zeros (TZs: 2N for an N-pole BPF) through variable LE capacitors. The operating principles of the devised AWLR-based tunable BPF concept are experimentally validated through a three-pole/six-TZ prototype at 418 MHz made up of commercially-available surface acoustic wave (SAW) resonators and LEs. It exhibits tunable BW between 0.16-0.49 MHz (0.5-1.5kt2), minimum in-band insertion loss (IL) between 3.3-1.2 dB (effective Q >10,000), and out-of-band IS reconfigurability.
{"title":"Tunable acoustic-wave-lumped-element resonator (awlr)-based bandpass filters","authors":"D. Psychogiou, R. Gómez‐García, D. Peroulis","doi":"10.1109/MWSYM.2016.7540356","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540356","url":null,"abstract":"Hybrid acoustic-wave-lumped-element resonator (AWLR)-based bandpass filters (BPFs) with reconfigurable bandwidth (BW) and tunable out-of-band isolation (IS) are reported in this paper. They are based on a new BPF architecture in which the AWLRs are in-parallel cascaded to an all-pass network through variable lumped-element (LE) impedance inverters. In this manner, passbands with arbitrarily-large BW-i.e., no longer limited by the electromechanical coupling coefficient (kt2) of its constituent acoustic-wave resonators (AWRs)-can be created and continuously controlled whilst preserving the high-quality-factor (Q: order of 10,000) characteristics of the AWR. Furthermore, tuning of the out-of-band IS is obtained by adjusting the location of the AWLRs transmission zeros (TZs: 2N for an N-pole BPF) through variable LE capacitors. The operating principles of the devised AWLR-based tunable BPF concept are experimentally validated through a three-pole/six-TZ prototype at 418 MHz made up of commercially-available surface acoustic wave (SAW) resonators and LEs. It exhibits tunable BW between 0.16-0.49 MHz (0.5-1.5kt2), minimum in-band insertion loss (IL) between 3.3-1.2 dB (effective Q >10,000), and out-of-band IS reconfigurability.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84945883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540381
Kaiyuan Zeng, D. Psychogiou, W. Allen, D. Peroulis
A 3D modular field-programmable filter array (FPFA) with high third-order input intercept point (IIP3) capable of delivering a constant transfer function through an octave tuning range is presented in this paper. An RF design methodology to fulfill the concept of an FPFA in a modular configuration is reported for the first time. The theoretical concept and its associated practical RF design considerations for IIP3 improvement in an octave tuning range are discussed. This modular FPFA allows for hardware extension at will, addressing the needs of next generation RF front-ends with multi-standard operability. An experimental 3D four-resonator FPFA has been designed, built and measured for proof-of-concept demonstration purposes. It functionalizes transfer functions with variable: i) order, ii) center frequency and iii) bandwidth. Furthermore, within an octave tuning range (98-194 MHz), the IIP3 was measured between 38-52 dBm.
{"title":"A constant-transfer-function widely-tunable VHF modular field-programmable filter array (FPFA) with IIP3 of 38–52 dBm","authors":"Kaiyuan Zeng, D. Psychogiou, W. Allen, D. Peroulis","doi":"10.1109/MWSYM.2016.7540381","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540381","url":null,"abstract":"A 3D modular field-programmable filter array (FPFA) with high third-order input intercept point (IIP3) capable of delivering a constant transfer function through an octave tuning range is presented in this paper. An RF design methodology to fulfill the concept of an FPFA in a modular configuration is reported for the first time. The theoretical concept and its associated practical RF design considerations for IIP3 improvement in an octave tuning range are discussed. This modular FPFA allows for hardware extension at will, addressing the needs of next generation RF front-ends with multi-standard operability. An experimental 3D four-resonator FPFA has been designed, built and measured for proof-of-concept demonstration purposes. It functionalizes transfer functions with variable: i) order, ii) center frequency and iii) bandwidth. Furthermore, within an octave tuning range (98-194 MHz), the IIP3 was measured between 38-52 dBm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"89 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84694536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540378
Andrew H. Zai, C. Florian, Tommaso A. Cappello, Z. Popovic
This paper reviews various techniques that allow efficient amplification of amplitude-modulated radar pulses through some type of supply modulation. Examples at S and X-band with GaN PAs will be shown with efficiencies above 50% for 10-W transmitters and greatly reduced spectral sidelobes.
{"title":"Efficient power amplifiers for amplitude-tapered pulses with improved spectral confinement","authors":"Andrew H. Zai, C. Florian, Tommaso A. Cappello, Z. Popovic","doi":"10.1109/MWSYM.2016.7540378","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540378","url":null,"abstract":"This paper reviews various techniques that allow efficient amplification of amplitude-modulated radar pulses through some type of supply modulation. Examples at S and X-band with GaN PAs will be shown with efficiencies above 50% for 10-W transmitters and greatly reduced spectral sidelobes.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88144005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540272
Shilei Hao, T. Hu, Q. Gu
This paper demonstrates a phase noise improvement technique for array systems by using the phase noise filter (PNF) and the noise's uncorrelated feature. The PNF aims to suppress input signal phase noise, which is however constrained by the PNF's own circuit noise, named as the phase noise sensitivity. In array systems, the noise from each individual PNF are uncorrelated, while the input signal and noise are correlated. By leveraging this feature, the phase noise in array systems will be theoretically improved by 10×log(N), where N is the element number of the array. Both simulation and 2-element array measurement results verify this theory. In the demonstration, the phase noise of 2-element PNF array is improved to -118 dBc/Hz at 1 MHz offset for a 10 GHz clock from the single PNF's sensitivity of -116.1/-115.4 dBc/Hz, respectively. The improvement is 2-3 dB, which is very close to the theoretical value. The phase noise suppression level and input frequency range are similar to the single PNF. The demonstrated -118 dBc/Hz at 1 MHz offset for a 10 GHz clock is the best result in the CMOS process based on the authors' best knowledge.
{"title":"Phase noise improvement for array systems","authors":"Shilei Hao, T. Hu, Q. Gu","doi":"10.1109/MWSYM.2016.7540272","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540272","url":null,"abstract":"This paper demonstrates a phase noise improvement technique for array systems by using the phase noise filter (PNF) and the noise's uncorrelated feature. The PNF aims to suppress input signal phase noise, which is however constrained by the PNF's own circuit noise, named as the phase noise sensitivity. In array systems, the noise from each individual PNF are uncorrelated, while the input signal and noise are correlated. By leveraging this feature, the phase noise in array systems will be theoretically improved by 10×log(N), where N is the element number of the array. Both simulation and 2-element array measurement results verify this theory. In the demonstration, the phase noise of 2-element PNF array is improved to -118 dBc/Hz at 1 MHz offset for a 10 GHz clock from the single PNF's sensitivity of -116.1/-115.4 dBc/Hz, respectively. The improvement is 2-3 dB, which is very close to the theoretical value. The phase noise suppression level and input frequency range are similar to the single PNF. The demonstrated -118 dBc/Hz at 1 MHz offset for a 10 GHz clock is the best result in the CMOS process based on the authors' best knowledge.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"34 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83051822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540343
Shilei Hao, Q. Gu
This paper presents a phase noise filter technique enabled by the delay-line and PD/CP based frequency discriminator with fully automatic calibration. It features wide bandwidth and insensitivity to amplitude noise. At low/high gain mode, it achieves 10.6/15 dB phase noise suppression with -116/-114.9 dBc/Hz sensitivity at 1 MHz offset, respectively. The suppression bandwidth is 100 kHz-10 MHz with input operating frequency range of 9.99-10.10 GHz. This proof-of-concept design is fabricated in a 65 nm CMOS process with the chip area of 1.68 mm × 1.5 mm. The circuit consumes 102 mW power.
{"title":"A 10 GHz phase noise filter with 10.6 dB phase noise suppression and −116 dBc/Hz sensitivity at 1 MHz offset","authors":"Shilei Hao, Q. Gu","doi":"10.1109/MWSYM.2016.7540343","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540343","url":null,"abstract":"This paper presents a phase noise filter technique enabled by the delay-line and PD/CP based frequency discriminator with fully automatic calibration. It features wide bandwidth and insensitivity to amplitude noise. At low/high gain mode, it achieves 10.6/15 dB phase noise suppression with -116/-114.9 dBc/Hz sensitivity at 1 MHz offset, respectively. The suppression bandwidth is 100 kHz-10 MHz with input operating frequency range of 9.99-10.10 GHz. This proof-of-concept design is fabricated in a 65 nm CMOS process with the chip area of 1.68 mm × 1.5 mm. The circuit consumes 102 mW power.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"81 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84273428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-11DOI: 10.1109/MWSYM.2016.7540223
Y. Ye, Bo Yu, Q. Gu
This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.
{"title":"A 165GHz OOK transmitter with 10.6% peak DC-to-RF efficiency in 65nm bulk CMOS","authors":"Y. Ye, Bo Yu, Q. Gu","doi":"10.1109/MWSYM.2016.7540223","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540223","url":null,"abstract":"This paper presents a high efficiency 165 GHz OOK transmitter on a 65nm CMOS technology, including a transformer impedance optimization based fundamental cross-coupled oscillator followed by a high-speed and high on-off ratio SPST switch based modulator. The transmitter demonstrates the highest DC-to-RF efficiency (10.6%) beyond 140 GHz in silicon processes, with a high output power (0.66 dBm), a high on-off ratio (> 32 dB) and a low phase noise (-105.4 dBc/Hz @ 1 MHz offset). The standalone oscillator also demonstrates the record DC-to-RF efficiency of 25.9% beyond 140 GHz in silicon processes. The transmitter is designed compact with the core area of 240 μm × 130 μm.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89346551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：