Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540322
R. Zhu, Xiupu Zhang, Dongya Shen
A low-cost linearization technique is proposed to improve RF signal power and suppress third order intermodulation distortion (IMD3) in radio-over-fiber (RoF) transmission systems. A directly modulated laser (DML) and an electro-absorption modulator integrated laser (EML) in C-band are both used for optical subcarrier modulation. The IMD3s induced by the two optical subcarrier modulations are suppressed by each other through adjusting the bias voltage of the electro-absorption modulator in the EML. In our initial experiments, the spurious free dynamic range (SFDR) is improved by more than 3.5 dB and output power at 1 dB compression point is improved by 4.3 dB.
{"title":"Linearization of radio-over-fiber systems using directly modulated and electro-absorption modulator integrated lasers","authors":"R. Zhu, Xiupu Zhang, Dongya Shen","doi":"10.1109/MWSYM.2016.7540322","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540322","url":null,"abstract":"A low-cost linearization technique is proposed to improve RF signal power and suppress third order intermodulation distortion (IMD3) in radio-over-fiber (RoF) transmission systems. A directly modulated laser (DML) and an electro-absorption modulator integrated laser (EML) in C-band are both used for optical subcarrier modulation. The IMD3s induced by the two optical subcarrier modulations are suppressed by each other through adjusting the bias voltage of the electro-absorption modulator in the EML. In our initial experiments, the spurious free dynamic range (SFDR) is improved by more than 3.5 dB and output power at 1 dB compression point is improved by 4.3 dB.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"114 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86239305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540095
G. Eleftheriades
We review the connection between transmission-line metamaterials (TL-MTMs) and the transmission-line matrix (TLM) method for solving Maxwell's equations numerically. We show historically how the two disciplines evolved and how they are intimately related to each other We use the TLM method to reveal and explain the physics of the negative index property characterizing certain classes of transmission-line metamaterials as well as to inspire new research avenues in TL-MTMs.
{"title":"Transmission-line metamaterials and their relation to the transmission-line matrix method","authors":"G. Eleftheriades","doi":"10.1109/MWSYM.2016.7540095","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540095","url":null,"abstract":"We review the connection between transmission-line metamaterials (TL-MTMs) and the transmission-line matrix (TLM) method for solving Maxwell's equations numerically. We show historically how the two disciplines evolved and how they are intimately related to each other We use the TLM method to reveal and explain the physics of the negative index property characterizing certain classes of transmission-line metamaterials as well as to inspire new research avenues in TL-MTMs.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"67 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89044331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540368
Yujia Peng, Tengxing Wang, Y. Huang, Wei Jiang, Guoan Wang
An electrically tunable bandpass filtering balun (BPF-Balun) on engineered substrate embedded with patterned Permalloy (Py) thin film is designed and implemented for the first time. The tunability of the BPF-Balun is realized through tuning RF characteristics of the engineered substrate. Embedded with patterned Py thin film which has high and current-dependent permeability, the developed engineered substrate has electrically tunable equivalent permeability. The center frequency of BPF-Balun on engineered substrate thus becomes tunable with different DC current. Patterning of Py film is analyzed and utilized to increase its FMR up to GHz range. The proposed BPF-Balun is fabricated on Rogers 4350 substrate while the engineered substrate is developed separately with high resistivity silicon embedded with patterned Py thin film. Tunable BPF-Balun is implemented through bonding the Rogers 4350 on the top of engineered substrate. The measured results show that the center frequency of the BPF-Balun can be tuned continuously from 1.49GHz to 1.545GHz with applied DC current adjusted from 0mA to 500mA. The measured magnitude imbalance and phase difference of the two balanced outputs are within 0.5dB and 180°± 5° for the whole frequency range. Larger tunability can be achieved with patterned Py thin film with optimized thickness.
{"title":"Electrically tunable bandpass filtering balun on engineered substrate embedded with patterned Permalloy thin film","authors":"Yujia Peng, Tengxing Wang, Y. Huang, Wei Jiang, Guoan Wang","doi":"10.1109/MWSYM.2016.7540368","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540368","url":null,"abstract":"An electrically tunable bandpass filtering balun (BPF-Balun) on engineered substrate embedded with patterned Permalloy (Py) thin film is designed and implemented for the first time. The tunability of the BPF-Balun is realized through tuning RF characteristics of the engineered substrate. Embedded with patterned Py thin film which has high and current-dependent permeability, the developed engineered substrate has electrically tunable equivalent permeability. The center frequency of BPF-Balun on engineered substrate thus becomes tunable with different DC current. Patterning of Py film is analyzed and utilized to increase its FMR up to GHz range. The proposed BPF-Balun is fabricated on Rogers 4350 substrate while the engineered substrate is developed separately with high resistivity silicon embedded with patterned Py thin film. Tunable BPF-Balun is implemented through bonding the Rogers 4350 on the top of engineered substrate. The measured results show that the center frequency of the BPF-Balun can be tuned continuously from 1.49GHz to 1.545GHz with applied DC current adjusted from 0mA to 500mA. The measured magnitude imbalance and phase difference of the two balanced outputs are within 0.5dB and 180°± 5° for the whole frequency range. Larger tunability can be achieved with patterned Py thin film with optimized thickness.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"62 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88830019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540334
Bauyrzhan Krykpayev, M. Farooqui, R. M. Bilal, A. Shamim
Despite the abundance of localization applications, the tracking devices have never been truly realized in E-textiles. Unobtrusive and flexible integration of tracking devices with clothes is difficult to achieve with standard PCB-based devices. An attractive option would be direct printing of circuit layout on the textile itself, negating the use of hard PCB materials. However, due to high surface roughness and porosity of textiles, efficient and reliable printing of electronics on textile has remained elusive. In this paper, an interface layer is first printed on the textile to facilitate the printing of a complete localization circuit and antenna for the first time. The tracking device utilizes WiFi to determine the wearer's position and can display this information on any internet-enabled device, such as smart phone. The device is small enough (55 mm × 45 mm) and lightweight (22g with 500 mAh battery) for people to comfortably wear it and can be easily concealed in case discretion is required. The device operates at 2.4GHz with communication range of up to 55 meters, and localization accuracy of up to 8 meters.
{"title":"A WiFi tracking device printed directly on textile for wearable electronics applications","authors":"Bauyrzhan Krykpayev, M. Farooqui, R. M. Bilal, A. Shamim","doi":"10.1109/MWSYM.2016.7540334","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540334","url":null,"abstract":"Despite the abundance of localization applications, the tracking devices have never been truly realized in E-textiles. Unobtrusive and flexible integration of tracking devices with clothes is difficult to achieve with standard PCB-based devices. An attractive option would be direct printing of circuit layout on the textile itself, negating the use of hard PCB materials. However, due to high surface roughness and porosity of textiles, efficient and reliable printing of electronics on textile has remained elusive. In this paper, an interface layer is first printed on the textile to facilitate the printing of a complete localization circuit and antenna for the first time. The tracking device utilizes WiFi to determine the wearer's position and can display this information on any internet-enabled device, such as smart phone. The device is small enough (55 mm × 45 mm) and lightweight (22g with 500 mAh battery) for people to comfortably wear it and can be easily concealed in case discretion is required. The device operates at 2.4GHz with communication range of up to 55 meters, and localization accuracy of up to 8 meters.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88863043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540064
C. Tomassoni, S. Bastioli, R. Snyder
In this paper a new class of in-line filters with pseudoelliptic responses based on mixed-mode resonators is presented. The mixed-mode resonator consists of a cavity with a suspended high permittivity dielectric puck at its center. Both cavity TE101 mode and dielectric TE01δ mode are exploited. This structure realizes the transverse doublet topology and it is capable of a transmission zero that can be easily positioned in both upper and lower stop-band. Couplings are controlled by both irises width and puck rotation. Mixed-mode resonators can be used as building blocks to obtain higher order filters by cascading them through non-resonating nodes. Such filters are capable of transmission zeros very close to the pass-band, resulting in a very high selectivity. Furthermore the presence of the dielectric puck leads to a very compact structure with a stable behavior in temperature.
{"title":"Mixed-mode resonator using TE101 cavity mode and TE01d dielectric mode","authors":"C. Tomassoni, S. Bastioli, R. Snyder","doi":"10.1109/MWSYM.2016.7540064","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540064","url":null,"abstract":"In this paper a new class of in-line filters with pseudoelliptic responses based on mixed-mode resonators is presented. The mixed-mode resonator consists of a cavity with a suspended high permittivity dielectric puck at its center. Both cavity TE101 mode and dielectric TE01δ mode are exploited. This structure realizes the transverse doublet topology and it is capable of a transmission zero that can be easily positioned in both upper and lower stop-band. Couplings are controlled by both irises width and puck rotation. Mixed-mode resonators can be used as building blocks to obtain higher order filters by cascading them through non-resonating nodes. Such filters are capable of transmission zeros very close to the pass-band, resulting in a very high selectivity. Furthermore the presence of the dielectric puck leads to a very compact structure with a stable behavior in temperature.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"59 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80548710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540120
Seungku Lee, M. Koohi, A. Mortazawi
This paper provides experimental results for elimination of lateral-wave spurious modes observed in switchable ferroelectric BST-on-Si composite FBARs using a frame design technique. This approach is used in piezoelectric FBAR design, however here it is applied for the first time to design intrinsically switchable ferroelectric BST acoustic resonators. The BST-on-Si composite FBAR presented here is a structure with the dispersion type-I characteristic, which requires a raised frame to eliminate any higher-order lateral-wave spurious modes. Based on 2-D Multiphysics simulations, FBARs with and without a frame are designed, verifying the utility of using a frame to improve device performance. Both FBARs are fabricated and measured, and then their performance is compared. Measurement results validate the effectiveness of a frame in the design of switchable BST FBARs, allowing for device performance improvement.
{"title":"Lateral-wave spurious-modes elimination in switchable ferroelectric BST-on-Si composite FBARs","authors":"Seungku Lee, M. Koohi, A. Mortazawi","doi":"10.1109/MWSYM.2016.7540120","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540120","url":null,"abstract":"This paper provides experimental results for elimination of lateral-wave spurious modes observed in switchable ferroelectric BST-on-Si composite FBARs using a frame design technique. This approach is used in piezoelectric FBAR design, however here it is applied for the first time to design intrinsically switchable ferroelectric BST acoustic resonators. The BST-on-Si composite FBAR presented here is a structure with the dispersion type-I characteristic, which requires a raised frame to eliminate any higher-order lateral-wave spurious modes. Based on 2-D Multiphysics simulations, FBARs with and without a frame are designed, verifying the utility of using a frame to improve device performance. Both FBARs are fabricated and measured, and then their performance is compared. Measurement results validate the effectiveness of a frame in the design of switchable BST FBARs, allowing for device performance improvement.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83755672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540189
Mingming Liu, H. Golestaneh, S. Boumaiza
A novel output-combining network for a concurrent dual-band Doherty power amplifier (DPA) is proposed. The proposed output combiner employs a modified II-network, which enables the absorption of main and peaking transistors' output parasitics over an extended frequency range and eliminates the need for offset lines that compromise the achievable bandwidth. In addition to performing the impedance inversion, the proposed combiner incorporates the biasing feeds and presents small low-frequency impedances to both transistors in order to improve the DPA linearizability when driven with concurrent dual-band modulated signals. A 50-W dual-band DPA demonstrator was successfully designed to operate across two bands, 2.05-2.30GHz and 3.2-3.62GHz. It achieved greater than 49% and 47% drain efficiency at a 6-dB output back-off over the two bands, and was successfully linearized under single and dual-band modulated signal stimuli.
{"title":"A concurrent 2.15/3.4 GHz dual-band Doherty power amplifier with extended fractional bandwidth","authors":"Mingming Liu, H. Golestaneh, S. Boumaiza","doi":"10.1109/MWSYM.2016.7540189","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540189","url":null,"abstract":"A novel output-combining network for a concurrent dual-band Doherty power amplifier (DPA) is proposed. The proposed output combiner employs a modified II-network, which enables the absorption of main and peaking transistors' output parasitics over an extended frequency range and eliminates the need for offset lines that compromise the achievable bandwidth. In addition to performing the impedance inversion, the proposed combiner incorporates the biasing feeds and presents small low-frequency impedances to both transistors in order to improve the DPA linearizability when driven with concurrent dual-band modulated signals. A 50-W dual-band DPA demonstrator was successfully designed to operate across two bands, 2.05-2.30GHz and 3.2-3.62GHz. It achieved greater than 49% and 47% drain efficiency at a 6-dB output back-off over the two bands, and was successfully linearized under single and dual-band modulated signal stimuli.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83855206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540407
F. Raab
This RF-power module is a building block for a multi-kilowatt high-efficiency power amplifier system. The module employs five GaN-FET class-F RF power amplifiers with a low-loss Gysel splitter and combiner. Envelope Elimination and Restoration is used to maintain efficiency over a wide range of amplitudes. It achieves an efficiency of 79 percent for power outputs from 380 to 650 W, and an efficiency of 70 percent for all outputs above 90 W. The drive power is only 12 W.
{"title":"650-W high-efficiency amplifier for 704 MHz","authors":"F. Raab","doi":"10.1109/MWSYM.2016.7540407","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540407","url":null,"abstract":"This RF-power module is a building block for a multi-kilowatt high-efficiency power amplifier system. The module employs five GaN-FET class-F RF power amplifiers with a low-loss Gysel splitter and combiner. Envelope Elimination and Restoration is used to maintain efficiency over a wide range of amplitudes. It achieves an efficiency of 79 percent for power outputs from 380 to 650 W, and an efficiency of 70 percent for all outputs above 90 W. The drive power is only 12 W.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"130 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79682949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540023
R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, M. King, Shalini Gupta, M. Snook, I. Wathuthanthri, Parrish Ralston, H. G. Henry
The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the channel region to form multiple parallel current paths in conjunction with castellations etched into that super-lattice to provide a sidewall gate structure. The sidewall gate permits the gate applied electric field to penetrate between the parallel 2DEG layers, allowing the carriers to be depleted out prior to avalanche breakdown within the material, as would occur with a conventional gate structure. Using an AlGaN/GaN super-lattice, we report on this method as a way to scale RF switch performance, decreasing ON resistance without significantly increasing OFF capacitance, with a median measured ON resistance of 0.38 Ω-mm and a median measured OFF capacitance of 0.21 pF/mm, leading to an RF switch figure of merit, FCO=2.0 THz. 90/10 and 10/90 fall and rise times for the SLCFET have been measured to be faster than 100 nsec, while the RF power handling for a series SLCFET has been measured at 10 GHz to be greater than 10 W without loss compression. Wideband SPDT RF switch performance over a 0.5-20 GHz bandwidth with <;|-0.3| dB of insertion loss and >|-30| dB of isolation has been achieved.
{"title":"Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for wideband low loss RF switching applications","authors":"R. Howell, E. Stewart, R. Freitag, J. Parke, B. Nechay, M. King, Shalini Gupta, M. Snook, I. Wathuthanthri, Parrish Ralston, H. G. Henry","doi":"10.1109/MWSYM.2016.7540023","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540023","url":null,"abstract":"The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the channel region to form multiple parallel current paths in conjunction with castellations etched into that super-lattice to provide a sidewall gate structure. The sidewall gate permits the gate applied electric field to penetrate between the parallel 2DEG layers, allowing the carriers to be depleted out prior to avalanche breakdown within the material, as would occur with a conventional gate structure. Using an AlGaN/GaN super-lattice, we report on this method as a way to scale RF switch performance, decreasing ON resistance without significantly increasing OFF capacitance, with a median measured ON resistance of 0.38 Ω-mm and a median measured OFF capacitance of 0.21 pF/mm, leading to an RF switch figure of merit, FCO=2.0 THz. 90/10 and 10/90 fall and rise times for the SLCFET have been measured to be faster than 100 nsec, while the RF power handling for a series SLCFET has been measured at 10 GHz to be greater than 10 W without loss compression. Wideband SPDT RF switch performance over a 0.5-20 GHz bandwidth with <;|-0.3| dB of insertion loss and >|-30| dB of isolation has been achieved.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"58 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81035297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540083
Ferran Bolós, D. Belo, A. Georgiadis
Ambient RF energy especially in urban settings is suitable for scavenging and harvesting scenarios provided one is able to collect signals from a large number of frequency bands and consequently spanning a large aggregate bandwidth. In this work a broadband rectifier is designed capable of harvesting RF energy in the 400 MHz - 1 GHz range, which includes the analog and digital TV bands and the UHF ISM 900 MHz band. In order to obtain a sufficiently large rectifier bandwidth, a matching network based on a non-uniform transmission line is considered. A charge pump rectifier is used and the number of diodes in the circuit is optimized in order to facilitate impedance matching based on the Bode-Fano limit. A prototype is fabricated and characterized. The rectifier has a measured efficiency above 5% from 470 MHz to 990 MHz at -20 dBm input power, which increases above 60% at 10 dBm input power over a band from 470 MHz to 860 MHz.
{"title":"A UHF rectifier with one octave bandwidth based on a non-uniform transmission line","authors":"Ferran Bolós, D. Belo, A. Georgiadis","doi":"10.1109/MWSYM.2016.7540083","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540083","url":null,"abstract":"Ambient RF energy especially in urban settings is suitable for scavenging and harvesting scenarios provided one is able to collect signals from a large number of frequency bands and consequently spanning a large aggregate bandwidth. In this work a broadband rectifier is designed capable of harvesting RF energy in the 400 MHz - 1 GHz range, which includes the analog and digital TV bands and the UHF ISM 900 MHz band. In order to obtain a sufficiently large rectifier bandwidth, a matching network based on a non-uniform transmission line is considered. A charge pump rectifier is used and the number of diodes in the circuit is optimized in order to facilitate impedance matching based on the Bode-Fano limit. A prototype is fabricated and characterized. The rectifier has a measured efficiency above 5% from 470 MHz to 990 MHz at -20 dBm input power, which increases above 60% at 10 dBm input power over a band from 470 MHz to 860 MHz.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"11 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88693293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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