Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540293
Wenyao Zhai, V. Miraftab, Morris Repeta, David Wessel, Wen Tong
In this paper, a novel dual-band co-aperture antenna array with high bandwidth is presented. The proposed frequency bands of interest are E-band and LMDS which can work simultaneously in a dual-band mm-wave radio to achieve high throughput. The distribution network is based on the combination of Substrate-Integrated-Waveguide (SIW) and stripline technologies. These feed networks co-exist in a low-cost PCB with 4 metal layers with minimal interference. The SIW distribution network feeds slot apertures with a special offset from the center axis of the waveguides, while the stripline lines excite U-shaped patch antennas by vertical vias. A 4×4 dual-band E-band/LMDS array prototype is presented to validate the concept. The dual-band antenna array is approximately 12mm×12mm in size realized on a Rogers 4350 substrate. Measured results versus simulations have been presented and discussed. This dual-band technique can be a great candidate for the multi-Giga-bit/s (Gbps) cellular applications for 5G communication and is compatible with low cost multilayer technologies.
{"title":"Dual-band millimeter-wave interleaved antenna array exploiting low-cost PCB technology for high speed 5G communication","authors":"Wenyao Zhai, V. Miraftab, Morris Repeta, David Wessel, Wen Tong","doi":"10.1109/MWSYM.2016.7540293","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540293","url":null,"abstract":"In this paper, a novel dual-band co-aperture antenna array with high bandwidth is presented. The proposed frequency bands of interest are E-band and LMDS which can work simultaneously in a dual-band mm-wave radio to achieve high throughput. The distribution network is based on the combination of Substrate-Integrated-Waveguide (SIW) and stripline technologies. These feed networks co-exist in a low-cost PCB with 4 metal layers with minimal interference. The SIW distribution network feeds slot apertures with a special offset from the center axis of the waveguides, while the stripline lines excite U-shaped patch antennas by vertical vias. A 4×4 dual-band E-band/LMDS array prototype is presented to validate the concept. The dual-band antenna array is approximately 12mm×12mm in size realized on a Rogers 4350 substrate. Measured results versus simulations have been presented and discussed. This dual-band technique can be a great candidate for the multi-Giga-bit/s (Gbps) cellular applications for 5G communication and is compatible with low cost multilayer technologies.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"134 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79405528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540336
N. Yardimci, M. Jarrahi
We present a high-power, broadband terahertz emitter that operates at telecommunication optical pump wavelengths at which high-performance and compact fiber lasers are commercially available. The presented terahertz emitter is a novel large area photoconductive emitter fabricated on a high resistivity ErAs:InGaAs substrate that utilizes a two-dimensional array of plasmonic nano-antennas. By incorporating plasmonic nano-antennas, stronger dipole moments are induced in response to an incident optical pump beam and, therefore, higher optical-to-terahertz conversion efficiencies are achieved compared to the state-of-the art. We demonstrate terahertz radiation power levels as high as 300 μW over a 0.1-5 THz frequency range at a 400 mW optical pump power. This is the highest reported terahertz radiation power level from a photoconductive terahertz emitter operating at telecommunication optical pump wavelengths.
{"title":"High-power, broadband terahertz radiation from large area plasmonic photoconductive emitters operating at telecommunication optical wavelengths","authors":"N. Yardimci, M. Jarrahi","doi":"10.1109/MWSYM.2016.7540336","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540336","url":null,"abstract":"We present a high-power, broadband terahertz emitter that operates at telecommunication optical pump wavelengths at which high-performance and compact fiber lasers are commercially available. The presented terahertz emitter is a novel large area photoconductive emitter fabricated on a high resistivity ErAs:InGaAs substrate that utilizes a two-dimensional array of plasmonic nano-antennas. By incorporating plasmonic nano-antennas, stronger dipole moments are induced in response to an incident optical pump beam and, therefore, higher optical-to-terahertz conversion efficiencies are achieved compared to the state-of-the art. We demonstrate terahertz radiation power levels as high as 300 μW over a 0.1-5 THz frequency range at a 400 mW optical pump power. This is the highest reported terahertz radiation power level from a photoconductive terahertz emitter operating at telecommunication optical pump wavelengths.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81280634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540417
C. Sarris, Shashwat Sharma
Several types of absorbing boundary conditions and simple matched absorbers, employed for mesh truncation in time and frequency domain numerical techniques (FDTD, FEM) work well for normally incident waves. However, their performance at other angles of incidence is often deemed unacceptable, motivating their replacement by perfectly matched layers. We propose a medium that can collimate incident waves, producing almost normally incident plane waves that can be readily absorbed even by a low order absorbing boundary condition such as Mur's. This perfectly matched layer collimator (PMLC) is a lossless, uniaxially anisotropic medium; its numerical implementation is much simpler than that of the conventional PML. Numerical results demonstrate the effectiveness of this medium as a means of rendering the performance of a first order absorbing boundary condition comparable to that of a PML.
{"title":"PMLC: A perfectly matched layer collimator and its applications to time and frequency domain numerical techniques","authors":"C. Sarris, Shashwat Sharma","doi":"10.1109/MWSYM.2016.7540417","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540417","url":null,"abstract":"Several types of absorbing boundary conditions and simple matched absorbers, employed for mesh truncation in time and frequency domain numerical techniques (FDTD, FEM) work well for normally incident waves. However, their performance at other angles of incidence is often deemed unacceptable, motivating their replacement by perfectly matched layers. We propose a medium that can collimate incident waves, producing almost normally incident plane waves that can be readily absorbed even by a low order absorbing boundary condition such as Mur's. This perfectly matched layer collimator (PMLC) is a lossless, uniaxially anisotropic medium; its numerical implementation is much simpler than that of the conventional PML. Numerical results demonstrate the effectiveness of this medium as a means of rendering the performance of a first order absorbing boundary condition comparable to that of a PML.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81715644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540388
P. Kurgan, S. Koziel, J. Bandler
A novel methodology for miniaturization-oriented design of a class of wideband branch-line couplers is proposed. The initial design is chosen from a family of optimized circuits that feature a simplified two-section topology. Compact size of the coupler is attained by using quasi-periodic slow-wave structures instead of conventional lines. Our approach explicitly aims at circuit size reduction by adjusting the number of elements within the recurrent slow-wave structure and its designable parameters to reach the smallest coupler layout possible. This is achieved at a low cost by exploiting a surrogate-based optimization (SBO) process with the underlying model of the recurrent slow-wave structure composed of multiple response surface approximations (RSAs). The SBO scheme incorporates adaptively adjusted design specifications to converge in just two iterations. A rapid fine-tuning procedure is applied to account for T-junction effects omitted during the design process. Our methodology is illustrated through a numerical example supported by experimental verification.
{"title":"Surrogate-based miniaturization-oriented design of two-section branch-line couplers","authors":"P. Kurgan, S. Koziel, J. Bandler","doi":"10.1109/MWSYM.2016.7540388","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540388","url":null,"abstract":"A novel methodology for miniaturization-oriented design of a class of wideband branch-line couplers is proposed. The initial design is chosen from a family of optimized circuits that feature a simplified two-section topology. Compact size of the coupler is attained by using quasi-periodic slow-wave structures instead of conventional lines. Our approach explicitly aims at circuit size reduction by adjusting the number of elements within the recurrent slow-wave structure and its designable parameters to reach the smallest coupler layout possible. This is achieved at a low cost by exploiting a surrogate-based optimization (SBO) process with the underlying model of the recurrent slow-wave structure composed of multiple response surface approximations (RSAs). The SBO scheme incorporates adaptively adjusted design specifications to converge in just two iterations. A rapid fine-tuning procedure is applied to account for T-junction effects omitted during the design process. Our methodology is illustrated through a numerical example supported by experimental verification.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81848557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540105
Seungku Lee, A. Mortazawi
A design method for BAW filters based on intrinsically switchable ferroelectric BST FBARs is presented. A complete set of design equations for ladder-type FBAR filters is derived based on the popular filter synthesis method using image parameters. For the first time, a complete analysis is performed that accurately calculates both the image impedance and propagation constant for BAW filters. Closed-form design equations as a function of FBAR and filter specifications are provided. As an experimental verification, a 1.5-stage switchable ferroelectric BST FBAR filter is designed, fabricated, and measured. When a dc bias is applied, a switchable filter is in its on-state and provides an insertion loss of 5.77 dB with a fractional bandwidth of 1.22% at 1.97 GHz. When in its off-state, the filter exhibits more than 22 dB isolation. Circuit-level simulation results are in very good agreement with the measurement results, validating the proposed BAW filter design method.
{"title":"BAW filter design method based on intrinsically switchable ferroelectric BST FBARs","authors":"Seungku Lee, A. Mortazawi","doi":"10.1109/MWSYM.2016.7540105","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540105","url":null,"abstract":"A design method for BAW filters based on intrinsically switchable ferroelectric BST FBARs is presented. A complete set of design equations for ladder-type FBAR filters is derived based on the popular filter synthesis method using image parameters. For the first time, a complete analysis is performed that accurately calculates both the image impedance and propagation constant for BAW filters. Closed-form design equations as a function of FBAR and filter specifications are provided. As an experimental verification, a 1.5-stage switchable ferroelectric BST FBAR filter is designed, fabricated, and measured. When a dc bias is applied, a switchable filter is in its on-state and provides an insertion loss of 5.77 dB with a fractional bandwidth of 1.22% at 1.97 GHz. When in its off-state, the filter exhibits more than 22 dB isolation. Circuit-level simulation results are in very good agreement with the measurement results, validating the proposed BAW filter design method.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84294827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540414
D. Henry, Hervé Aubert, Patrick Pons
This paper presents a novel technique for the detection and remote reading of passive temperature sensors. This technique is based on a 3D beam scanning performed by a FMCW radar for measuring the echo level of sensors distributed in a scene. The carrier frequency is 24GHz and two frequency modulation bandwidths are investigated (2 GHz and ISM 250 MHz). The fluctuation of the measured echo level is analyzed by using appropriate estimators and the derived temperature variation is displayed by using a convenient three dimensional representation of isosurfaces.
{"title":"3D scanning and sensing technique for the detection and remote reading of a passive temperature sensor","authors":"D. Henry, Hervé Aubert, Patrick Pons","doi":"10.1109/MWSYM.2016.7540414","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540414","url":null,"abstract":"This paper presents a novel technique for the detection and remote reading of passive temperature sensors. This technique is based on a 3D beam scanning performed by a FMCW radar for measuring the echo level of sensors distributed in a scene. The carrier frequency is 24GHz and two frequency modulation bandwidths are investigated (2 GHz and ISM 250 MHz). The fluctuation of the measured echo level is analyzed by using appropriate estimators and the derived temperature variation is displayed by using a convenient three dimensional representation of isosurfaces.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86006397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540066
M. Sánchez-Soriano, S. Sirci, J. D. Martinez, V. Boria
In this paper a new approach for the design of very compact bandpass filters (BPFs) with transmission zero generation is proposed. The proposed filters are based on a dual mode substrate integrated waveguide (SIW) coaxial cavity. This filtering building block provides two coaxial modes performing a doublet filtering configuration. The proposed dual-mode SIW coaxial cavity is studied in detail and guidelines for the filter design are given. As will be shown, the proposed building block presents a high degree of design flexibility, which allows for the design of multiple kind of bandpass filter responses, including both narrow- and wide-band bandpass filters along with TZ generation. Two proof-of-concept filters are implemented and tested: a wide-band BPF with a fractional bandwidth of 20% centered at 8 GHz, and a quasi-elliptic type narrow-band BPF formed by cascading two dual-mode SIW coaxial cavities.
{"title":"Compact bandpass filters based on a new substrate integrated waveguide coaxial cavity","authors":"M. Sánchez-Soriano, S. Sirci, J. D. Martinez, V. Boria","doi":"10.1109/MWSYM.2016.7540066","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540066","url":null,"abstract":"In this paper a new approach for the design of very compact bandpass filters (BPFs) with transmission zero generation is proposed. The proposed filters are based on a dual mode substrate integrated waveguide (SIW) coaxial cavity. This filtering building block provides two coaxial modes performing a doublet filtering configuration. The proposed dual-mode SIW coaxial cavity is studied in detail and guidelines for the filter design are given. As will be shown, the proposed building block presents a high degree of design flexibility, which allows for the design of multiple kind of bandpass filter responses, including both narrow- and wide-band bandpass filters along with TZ generation. Two proof-of-concept filters are implemented and tested: a wide-band BPF with a fractional bandwidth of 20% centered at 8 GHz, and a quasi-elliptic type narrow-band BPF formed by cascading two dual-mode SIW coaxial cavities.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83000902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7539982
K. Kibaroglu, Gabriel M. Rebeiz
This paper presents an N-path bandpass filter with a tuning range of 0.1-12 GHz, a constant 3-dB bandwidth of 150 MHz (1-dB bandwidth of 80 MHz), and a stopband rejection greater than 20 dB. The filter includes two sets of 4-path mixers to remove the dependence of the rejection on the switch resistance, and also a clock (LO) divider which operates at 0.2-24 GHz. The passband insertion loss is 3-7.4 dB from 0.1-12 GHz with a power consumption of 20-130 mW. The measured in-band IIP3 is 21-6 dBm and the measured out-of-band IIP3 is 29-15 dBm at 120 MHz offset for 0.1-12 GHz, respectively. To the best of the authors' knowledge, this is the widest tuning range demonstrated for an N-path bandpass filter of any kind.
{"title":"An N-path bandpass filter with a tuning range of 0.1–12 GHz and stopband rejection > 20 dB in 32 nm SOI CMOS","authors":"K. Kibaroglu, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2016.7539982","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539982","url":null,"abstract":"This paper presents an N-path bandpass filter with a tuning range of 0.1-12 GHz, a constant 3-dB bandwidth of 150 MHz (1-dB bandwidth of 80 MHz), and a stopband rejection greater than 20 dB. The filter includes two sets of 4-path mixers to remove the dependence of the rejection on the switch resistance, and also a clock (LO) divider which operates at 0.2-24 GHz. The passband insertion loss is 3-7.4 dB from 0.1-12 GHz with a power consumption of 20-130 mW. The measured in-band IIP3 is 21-6 dBm and the measured out-of-band IIP3 is 29-15 dBm at 120 MHz offset for 0.1-12 GHz, respectively. To the best of the authors' knowledge, this is the widest tuning range demonstrated for an N-path bandpass filter of any kind.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"52 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85708466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540341
Jian-fong Wu, Yo-Shen Lin
An on-chip bandpass single-pole-double-throw (SPDT) switch with very compact circuit size is proposed, which is realized using a capacitvely loaded multicoupled line. By sharing the first resonator between the two signal paths and by replacing the quarter-wavelength impedance transformer in conventional designs with a J-inverter, the circuit size can be much reduced. In addition, the capacitive loading can help improve the spurious response such that a very wide upper stopband up to 10f0 can be achieved. Specifically, a third-order bandpass SPDT switch with a center frequency f0 of 5.5 GHz and a bandwidth of about 10% is realized in a commercial GaAs pHEMT process. The measured in-band insertion loss in the on state is better than 4 dB with a 30-dB upper stopband up to 55 GHz. The measured isolation in the off state is better than 30 dB from dc to 55 GHz. The chip size is 1.5 mm × 1 mm, which is only about 0.028λ0 × 0.018λ0 at f0.
{"title":"On-chip bandpass single-pole-double-throw switch based on multicoupled line","authors":"Jian-fong Wu, Yo-Shen Lin","doi":"10.1109/MWSYM.2016.7540341","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540341","url":null,"abstract":"An on-chip bandpass single-pole-double-throw (SPDT) switch with very compact circuit size is proposed, which is realized using a capacitvely loaded multicoupled line. By sharing the first resonator between the two signal paths and by replacing the quarter-wavelength impedance transformer in conventional designs with a J-inverter, the circuit size can be much reduced. In addition, the capacitive loading can help improve the spurious response such that a very wide upper stopband up to 10f0 can be achieved. Specifically, a third-order bandpass SPDT switch with a center frequency f0 of 5.5 GHz and a bandwidth of about 10% is realized in a commercial GaAs pHEMT process. The measured in-band insertion loss in the on state is better than 4 dB with a 30-dB upper stopband up to 55 GHz. The measured isolation in the off state is better than 30 dB from dc to 55 GHz. The chip size is 1.5 mm × 1 mm, which is only about 0.028λ0 × 0.018λ0 at f0.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"72 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85843016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540349
Run Levinger, O. Katz, J. Vovnoboy, R. Ben-Yishay, D. Elad
This paper presents a low phase noise and high gain Gm boosted Colpitts Voltage Controlled Oscillator (VCO) that covers a 9.8% continuous tuning range spanning 18.79 to 20.73 GHz. The tank was modified to facilitate the VCO to maintain low phase noise despite having high gain. Designed and implemented in IBM 0.13μm SiGe BiCMOS8hp technology, the measured phase noise at 10 MHz offset ranges between -140 to -132.5 dBc/Hz throughout the entire tuning range with a maximum gain of 2 GHz/Volt. The VCO is optimized for a 76 to 81 GHz FMCW radar when cascaded with a frequency multiplier by four. The VCO core consumes 29mA from a 2V regulator.
{"title":"A K-band low phase noise and high gain Gm boosted colpitts VCO for 76–81 GHz FMCW radar applications","authors":"Run Levinger, O. Katz, J. Vovnoboy, R. Ben-Yishay, D. Elad","doi":"10.1109/MWSYM.2016.7540349","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540349","url":null,"abstract":"This paper presents a low phase noise and high gain Gm boosted Colpitts Voltage Controlled Oscillator (VCO) that covers a 9.8% continuous tuning range spanning 18.79 to 20.73 GHz. The tank was modified to facilitate the VCO to maintain low phase noise despite having high gain. Designed and implemented in IBM 0.13μm SiGe BiCMOS8hp technology, the measured phase noise at 10 MHz offset ranges between -140 to -132.5 dBc/Hz throughout the entire tuning range with a maximum gain of 2 GHz/Volt. The VCO is optimized for a 76 to 81 GHz FMCW radar when cascaded with a frequency multiplier by four. The VCO core consumes 29mA from a 2V regulator.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"112 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78528143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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