Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540080
S. Abbasian, T. Johnson
This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.
{"title":"High efficiency GaN HEMT synchronous rectifier with an octave bandwidth for wireless power applications","authors":"S. Abbasian, T. Johnson","doi":"10.1109/MWSYM.2016.7540080","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540080","url":null,"abstract":"This paper presents the design and implementation of a high efficiency and high power wideband GaN RF synchronous rectifier. The rectifier circuit is constructed from a wideband amplifier using the time reversal duality principle. Measurement results are presented for both the amplifier and rectifier. Under identical source power conditions the amplifier has a power efficiency of 79.2% and the rectifier has a power efficiency of 80.1% with a DC power about 8 W. Power efficiency is also measured over a broad bandwidth and remains above 60% over a frequency range from 600 MHz to 1150 MHz.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"56 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84695204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540085
J. Bandler, S. Koziel
After decades of research and development in the computation of electromagnetic (EM) fields, the microwave breakthrough in harnessing commercial field solvers for design optimization appeared in the early 1990s. Almost simultaneously, the commercial implementation of an effective response surface technique was complemented by the discovery of the space mapping concept that promised electromagnetically validated, near optimal solutions at the expense of only a few high-fidelity full-wave simulations. Simplified models, even coarse electromagnetic models, could now be iteratively “mapped” on-the-fly to full-wave models through the 1995 aggressive space mapping algorithm. In this paper, we offer a brief overview of further advances to date, including space mapping, response correction techniques, simulation-based tuning, as well as feature-based modeling and optimization.
{"title":"Advances in electromagnetics-based design optimization","authors":"J. Bandler, S. Koziel","doi":"10.1109/MWSYM.2016.7540085","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540085","url":null,"abstract":"After decades of research and development in the computation of electromagnetic (EM) fields, the microwave breakthrough in harnessing commercial field solvers for design optimization appeared in the early 1990s. Almost simultaneously, the commercial implementation of an effective response surface technique was complemented by the discovery of the space mapping concept that promised electromagnetically validated, near optimal solutions at the expense of only a few high-fidelity full-wave simulations. Simplified models, even coarse electromagnetic models, could now be iteratively “mapped” on-the-fly to full-wave models through the 1995 aggressive space mapping algorithm. In this paper, we offer a brief overview of further advances to date, including space mapping, response correction techniques, simulation-based tuning, as well as feature-based modeling and optimization.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"56 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85162362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540050
Iljin Lee, Sooyeon Kim, S. Jeon
This paper presents H-band down-conversion and up-conversion mixers implemented in a 250-nm InP double heterojunction bipolar transistor technology. The mixers are aimed to achieve a wide IF bandwidth and high conversion gain for high-speed wireless communication. The- mixer core employs a Gilbert cell pumped by a fundamental LO signal, leading to high conversion gain and high isolation. To achieve a wide IF bandwidth, the inductive-peaking, Cherry-Hooper, and staggered-tuned techniques are used at IF output of the down-conversion mixer. The down- and up-conversion mixers exhibit measured conversion gain of 7.5 and -5.2 dB with 3-dB SSB IF bandwidth of 20 and 25 GHz at LO frequency of 270 and 280 GHz, respectively.
{"title":"H-band down-conversion and up-conversion mixers with wide IF bandwidth","authors":"Iljin Lee, Sooyeon Kim, S. Jeon","doi":"10.1109/MWSYM.2016.7540050","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540050","url":null,"abstract":"This paper presents H-band down-conversion and up-conversion mixers implemented in a 250-nm InP double heterojunction bipolar transistor technology. The mixers are aimed to achieve a wide IF bandwidth and high conversion gain for high-speed wireless communication. The- mixer core employs a Gilbert cell pumped by a fundamental LO signal, leading to high conversion gain and high isolation. To achieve a wide IF bandwidth, the inductive-peaking, Cherry-Hooper, and staggered-tuned techniques are used at IF output of the down-conversion mixer. The down- and up-conversion mixers exhibit measured conversion gain of 7.5 and -5.2 dB with 3-dB SSB IF bandwidth of 20 and 25 GHz at LO frequency of 270 and 280 GHz, respectively.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85308181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540383
S. Y. Mortazavi, Kwang-Jin Koh
This paper presents a 2-stage Class-F-1 power amplifier in 0.13 μm SiGe BiCMOS process, achieving 43% peak PAE and 18 dBm Psat at 40.5 GHz. The PA utilizes simple but effective λ/4-transformer based 2nd harmonic-tuning load and relies on a native low capacitive reactance to short all other higher-order harmonics. This reduces the harmonic load complexity significantly and loss thereof, exceeding PAE over 40% at 39.5-42 GHz. The PA achieves >17 dB small signal gain, >15 dB power gain, and 16 dBm OP-1dB at 39-43 GHz. The Pout for <;5% EVM is 15.5 dBm with QPSK/8PSK modulation signals, and 13.5 dBm with 16/64/128 QAM modulation signals. The PA occupies 0.95×0.6 mm2 including pads.
{"title":"A 43% PAE inverse Class-F power amplifier at 39–42 GHz with a λ/4-transformer based harmonic filter in 0.13-µm SiGe BiCMOS","authors":"S. Y. Mortazavi, Kwang-Jin Koh","doi":"10.1109/MWSYM.2016.7540383","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540383","url":null,"abstract":"This paper presents a 2-stage Class-F-1 power amplifier in 0.13 μm SiGe BiCMOS process, achieving 43% peak PAE and 18 dBm Psat at 40.5 GHz. The PA utilizes simple but effective λ/4-transformer based 2nd harmonic-tuning load and relies on a native low capacitive reactance to short all other higher-order harmonics. This reduces the harmonic load complexity significantly and loss thereof, exceeding PAE over 40% at 39.5-42 GHz. The PA achieves >17 dB small signal gain, >15 dB power gain, and 16 dBm OP-1dB at 39-43 GHz. The Pout for <;5% EVM is 15.5 dBm with QPSK/8PSK modulation signals, and 13.5 dBm with 16/64/128 QAM modulation signals. The PA occupies 0.95×0.6 mm2 including pads.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"59 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84087959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540111
Martin Hitzler, Stefan Saulig, L. Boehm, W. Mayer, W. Winkler, C. Waldschmidt
This paper presents an ultra compact bistatic FMCW radar transceiver MMIC at 160 GHz with a mixer-based synthesizer concept. The integrated mixer converts a ramp signal with a stabilized local oscillator (SLO) signal to the RF output signal. The usage of a mixer reduces the frequency multiplication factor of the ramp signal and hence improves the phase noise at 160 GHz. The fixed frequency local oscillator for the up-conversion has a comparably small phase noise level compared to the ramp input signal and does not contribute significantly to the total phase noise level at 160 GHz. Apart from the synthesizer, the MMIC also includes a power amplifier with a maximum output power of 2 dBm, two efficient integrated antennas with a wide radiation pattern, and an IQ-receiver. Two FMCW radar responses recorded with a bandwidth of 20 GHz show the dynamic range of this sensor and its near range behavior. The compact SiGe MMIC requires only a chip area of 1.4mm × 1.0mm and consumes 285mW from a 3V power supply.
{"title":"Compact bistatic 160 GHz transceiver MMIC with phase noise optimized synthesizer for FMCW radar","authors":"Martin Hitzler, Stefan Saulig, L. Boehm, W. Mayer, W. Winkler, C. Waldschmidt","doi":"10.1109/MWSYM.2016.7540111","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540111","url":null,"abstract":"This paper presents an ultra compact bistatic FMCW radar transceiver MMIC at 160 GHz with a mixer-based synthesizer concept. The integrated mixer converts a ramp signal with a stabilized local oscillator (SLO) signal to the RF output signal. The usage of a mixer reduces the frequency multiplication factor of the ramp signal and hence improves the phase noise at 160 GHz. The fixed frequency local oscillator for the up-conversion has a comparably small phase noise level compared to the ramp input signal and does not contribute significantly to the total phase noise level at 160 GHz. Apart from the synthesizer, the MMIC also includes a power amplifier with a maximum output power of 2 dBm, two efficient integrated antennas with a wide radiation pattern, and an IQ-receiver. Two FMCW radar responses recorded with a bandwidth of 20 GHz show the dynamic range of this sensor and its near range behavior. The compact SiGe MMIC requires only a chip area of 1.4mm × 1.0mm and consumes 285mW from a 3V power supply.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80490975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540281
Linsheng Wu, J. Mao
A planar filtering crossover is proposed for three intersecting channels in this paper. It is constructed with three dual-mode ring resonators. The even and odd modes are coupled in three groups, to support the second-order bandpass filtering response for each channel. The isolation between different channels are achieved by using the orthogonality of even and odd resonant modes, with properly designing the internal and external couplings. The prototype shows reasonable performance of both intra-channel filtering and inter-channel isolation.
{"title":"A planar filtering crossover for three intersecting channels","authors":"Linsheng Wu, J. Mao","doi":"10.1109/MWSYM.2016.7540281","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540281","url":null,"abstract":"A planar filtering crossover is proposed for three intersecting channels in this paper. It is constructed with three dual-mode ring resonators. The even and odd modes are coupled in three groups, to support the second-order bandpass filtering response for each channel. The isolation between different channels are achieved by using the orthogonality of even and odd resonant modes, with properly designing the internal and external couplings. The prototype shows reasonable performance of both intra-channel filtering and inter-channel isolation.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"13 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80779181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540184
S. Berweger, P. Blanchard, Rebecca C. Quardokus, F. DelRio, T. M. Wallis, P. Kabos, S. Krylyuk, A. Davydov
With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic variations within nanomaterials using nanowires of VO2 and Si as model systems. For VO2 we image the temperature-dependent metal-insulator domain coexistence that arises due to the built-in strain in substrate-clamped wires. In Si NWs integrated into a transistor device architecture we observe large increases in the source-drain current with the tip passing over the wire, correlated with variations in the SMM signal. We attribute this effect to local rectification of the microwave signal by the local tip-sample Schottky junction.
{"title":"Near-field microwave microscopy of one-dimensional nanostructures","authors":"S. Berweger, P. Blanchard, Rebecca C. Quardokus, F. DelRio, T. M. Wallis, P. Kabos, S. Krylyuk, A. Davydov","doi":"10.1109/MWSYM.2016.7540184","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540184","url":null,"abstract":"With the ability to measure sample conductivity with nanometer spatial resolution, scanning microwave microscopy (SMM) is a powerful tool to study nanoscale electronic systems and devices. Here we demonstrate the general capability to image electronic variations within nanomaterials using nanowires of VO2 and Si as model systems. For VO2 we image the temperature-dependent metal-insulator domain coexistence that arises due to the built-in strain in substrate-clamped wires. In Si NWs integrated into a transistor device architecture we observe large increases in the source-drain current with the tip passing over the wire, correlated with variations in the SMM signal. We attribute this effect to local rectification of the microwave signal by the local tip-sample Schottky junction.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80435807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540060
S. Tamiazzo, G. Macchiarella
We present in this paper a novel canonical folded prototype circuit with some couplings varying linearly with the normalized frequency. The derivation of this prototype is based on a suitable transformation of an asymmetric lattice network, generated through a sequence of matrix rotations of the coupling matrix of the folded canonical prototype. It is shown that the lattice network is a generalization of the canonical cul-de-sac form, which is obtained when the reflection zeros are all imaginary. We have also verified that the cul-de-sac forms are possible only when the reflection zeros are all imaginary (or in para-conjugate pairs). The lattice network (or the one with frequency-dependent couplings) represents a possible alternative to the cul-de-sac forms in the synthesis of star-junction multiplexers, when the synthesized filters exhibits complex reflection zeros.
{"title":"A canonical prototype for coupled-resonator filters with frequency-dependent couplings","authors":"S. Tamiazzo, G. Macchiarella","doi":"10.1109/MWSYM.2016.7540060","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540060","url":null,"abstract":"We present in this paper a novel canonical folded prototype circuit with some couplings varying linearly with the normalized frequency. The derivation of this prototype is based on a suitable transformation of an asymmetric lattice network, generated through a sequence of matrix rotations of the coupling matrix of the folded canonical prototype. It is shown that the lattice network is a generalization of the canonical cul-de-sac form, which is obtained when the reflection zeros are all imaginary. We have also verified that the cul-de-sac forms are possible only when the reflection zeros are all imaginary (or in para-conjugate pairs). The lattice network (or the one with frequency-dependent couplings) represents a possible alternative to the cul-de-sac forms in the synthesis of star-junction multiplexers, when the synthesized filters exhibits complex reflection zeros.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77749721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540097
A. Taeb, Luyao Chen, S. Gigoyan, M. Basha, G. Rafi, S. Chaudhuri, S. Safavi-Naeini
A low-loss and low-cost Silicon Image Guide (SIG) platform for realization of high performance sub-millimeter-wave and THz integrated systems is proposed. The implementation of an extremely low-loss bend and 3-dB power divider, as typical examples of high performance passive components realizable by the proposed technology, are presented. The SIG structures are fabricated using a fast and mask-free laser machining technique. The measured average insertion loss of the SIG is remarkably small, less than 0.035 dB/mm over the frequency range of 110- 170 GHz. A very low-loss bend with a bending loss less than 0.25 dB/90° at 150 GHz for the curvatures with the radius as small as 2 mm is also demonstrated.
{"title":"A Silicon Image Guide (SIG) technology platform for high performance sub-millimeter-wave passive structures","authors":"A. Taeb, Luyao Chen, S. Gigoyan, M. Basha, G. Rafi, S. Chaudhuri, S. Safavi-Naeini","doi":"10.1109/MWSYM.2016.7540097","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540097","url":null,"abstract":"A low-loss and low-cost Silicon Image Guide (SIG) platform for realization of high performance sub-millimeter-wave and THz integrated systems is proposed. The implementation of an extremely low-loss bend and 3-dB power divider, as typical examples of high performance passive components realizable by the proposed technology, are presented. The SIG structures are fabricated using a fast and mask-free laser machining technique. The measured average insertion loss of the SIG is remarkably small, less than 0.035 dB/mm over the frequency range of 110- 170 GHz. A very low-loss bend with a bending loss less than 0.25 dB/90° at 150 GHz for the curvatures with the radius as small as 2 mm is also demonstrated.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77792355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540210
Peiyu Chen, Yiqiu Wang, A. Babakhani
This paper reports a fully integrated impulse radiator with the capability of radiating impulses with 4ps FWHM and reconfigurable amplitude. The peak radiated power at 54GHz is 8.7dBm with a 13.6dBm peak EIRP. A Non-Linear Q-Switching Impedance (NLQSI) technique is introduced to generate impulses and control their amplitudes. Furthermore, a two-bit impulse amplitude modulation is achieved through an on-chip four-way impulse combiner, which also attenuates parasitic-induced low-frequency radiation. In addition to performing frequency-domain measurements, for the first time, an ultra-wideband THz Time-Domain Spectroscopy (THz-TDS) system is utilized to characterize the radiated signal in time-domain. The radiated impulse has an SNR>1 bandwidth of more than 160GHz. The fully-integrated impulse radiator is implemented in a 0.13μm SiGe BiCMOS process. It has a die area of 1mm2 and it consumes 170mW.
{"title":"A 4ps amplitude reconfigurable impulse radiator with THz-TDS characterization method in 0.13µm SiGe BiCMOS","authors":"Peiyu Chen, Yiqiu Wang, A. Babakhani","doi":"10.1109/MWSYM.2016.7540210","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540210","url":null,"abstract":"This paper reports a fully integrated impulse radiator with the capability of radiating impulses with 4ps FWHM and reconfigurable amplitude. The peak radiated power at 54GHz is 8.7dBm with a 13.6dBm peak EIRP. A Non-Linear Q-Switching Impedance (NLQSI) technique is introduced to generate impulses and control their amplitudes. Furthermore, a two-bit impulse amplitude modulation is achieved through an on-chip four-way impulse combiner, which also attenuates parasitic-induced low-frequency radiation. In addition to performing frequency-domain measurements, for the first time, an ultra-wideband THz Time-Domain Spectroscopy (THz-TDS) system is utilized to characterize the radiated signal in time-domain. The radiated impulse has an SNR>1 bandwidth of more than 160GHz. The fully-integrated impulse radiator is implemented in a 0.13μm SiGe BiCMOS process. It has a die area of 1mm2 and it consumes 170mW.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"102 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82229770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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