Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7539954
T. Karpisz, P. Kopyt, B. Salski, Jerzy Krupka
In this paper, a measurement setup applicable to characterization of liquids at millimeter wavelengths is investigated. The system is composed of a vertically-oriented open-ended waveguide section, where the liquid under test can be easily poured. It is separated from waveguide measurement equipment with a dielectric window made of either fused silica of monocrystalline quartz. The advantage of the proposed approach is in the robustness of the design consisting of off-the-shelf components and a straightforward procedure for determining complex permittivity of high loss liquids with a decent accuracy.
{"title":"Open-ended waveguide measurement of liquids at millimeter wavelengths","authors":"T. Karpisz, P. Kopyt, B. Salski, Jerzy Krupka","doi":"10.1109/MWSYM.2016.7539954","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539954","url":null,"abstract":"In this paper, a measurement setup applicable to characterization of liquids at millimeter wavelengths is investigated. The system is composed of a vertically-oriented open-ended waveguide section, where the liquid under test can be easily poured. It is separated from waveguide measurement equipment with a dielectric window made of either fused silica of monocrystalline quartz. The advantage of the proposed approach is in the robustness of the design consisting of off-the-shelf components and a straightforward procedure for determining complex permittivity of high loss liquids with a decent accuracy.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72847163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540058
Pedro Rynkiewicz, A. Franc, F. Coccetti, M. Wietstruck, M. Kaynak, G. Prigent
Two millimeter-wave dual-mode ring-based filters implemented in SiGe BiCMOS 0.25-μm technology are presented. Both filters are designed using specific synthesis. The nominal ring filter exhibits 13% of 3-dB fractional bandwidth (FBW3dB), 5.6 dB of insertion losses at 61 GHz for a footprint of 0.74 mm2. The modified filter is a capacitively loaded ring filter showing 11.9% of FBWW3dB, 5.0 dB insertion losses at 61.2 GHz with a footprint of 0.32 mm2. The modification allows a significant size reduction (2.3 times smaller) while maintaining equivalent electrical performance.
{"title":"A compact millimeter-wave dual-mode ring filter using loaded capacitances in CMOS 0.25µm technology","authors":"Pedro Rynkiewicz, A. Franc, F. Coccetti, M. Wietstruck, M. Kaynak, G. Prigent","doi":"10.1109/MWSYM.2016.7540058","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540058","url":null,"abstract":"Two millimeter-wave dual-mode ring-based filters implemented in SiGe BiCMOS 0.25-μm technology are presented. Both filters are designed using specific synthesis. The nominal ring filter exhibits 13% of 3-dB fractional bandwidth (FBW3dB), 5.6 dB of insertion losses at 61 GHz for a footprint of 0.74 mm2. The modified filter is a capacitively loaded ring filter showing 11.9% of FBWW3dB, 5.0 dB insertion losses at 61.2 GHz with a footprint of 0.32 mm2. The modification allows a significant size reduction (2.3 times smaller) while maintaining equivalent electrical performance.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80108223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540403
S. Koziel, J. Bandler
In this paper, a low-cost procedure for dimension scaling and tuning of microwave filters is proposed. Our approach relies on an inverse model that outputs the filter dimensions for the required center frequency and bandwidth. The model is constructed using several reference designs obtained using surrogate-assisted optimization exploiting a response feature methodology. The initial approximation of the scaled filter design is subsequently corrected using a fast feature-based tuning procedure. The proposed methodology is demonstrated using a fifth-order Chebyshev bandpass filter for the tuning range of 10 GHz to 12 GHz (center frequency) and 6 % to 12 % (relative bandwidth).
{"title":"Low-cost dimension scaling and tuning of microwave filters using response features","authors":"S. Koziel, J. Bandler","doi":"10.1109/MWSYM.2016.7540403","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540403","url":null,"abstract":"In this paper, a low-cost procedure for dimension scaling and tuning of microwave filters is proposed. Our approach relies on an inverse model that outputs the filter dimensions for the required center frequency and bandwidth. The model is constructed using several reference designs obtained using surrogate-assisted optimization exploiting a response feature methodology. The initial approximation of the scaled filter design is subsequently corrected using a fast feature-based tuning procedure. The proposed methodology is demonstrated using a fifth-order Chebyshev bandpass filter for the tuning range of 10 GHz to 12 GHz (center frequency) and 6 % to 12 % (relative bandwidth).","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82562873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540284
Fei Wang, Hua Wang
This paper presents an ultra-broadband ultracompact Butler Matrix design scheme. The design employs stacked transformer based couplers and lumped LC π-network phase shifters for substantial size reduction. As a proof-of-concept design, a 4×4 Butler Matrix is implemented in a standard 130nm bulk CMOS process at a center frequency of 2.0 GHz. Compared with reported fully integrated 2.0 GHz 4×4 Butler Matrix designs in CMOS, the proposed design achieves the lowest insertion loss of 1.10dB, the smallest amplitude mismatch of 0.3 dB, the largest fractional bandwidth of 34.6%, and the smallest chip core area of 0.635×1.122 mm2. Based on the measured S-parameters, the four concurrent electrical array patterns of the Butler Matrix achieve array peak-to-null ratio (PNR) of 29.5 dB at 2.0 GHz and better than 15.0 dB between 1.55 GHz and 2.50 GHz.
{"title":"A broadband compact low-loss 4×4 Butler Matrix in CMOS with stacked transformer based quadrature couplers","authors":"Fei Wang, Hua Wang","doi":"10.1109/MWSYM.2016.7540284","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540284","url":null,"abstract":"This paper presents an ultra-broadband ultracompact Butler Matrix design scheme. The design employs stacked transformer based couplers and lumped LC π-network phase shifters for substantial size reduction. As a proof-of-concept design, a 4×4 Butler Matrix is implemented in a standard 130nm bulk CMOS process at a center frequency of 2.0 GHz. Compared with reported fully integrated 2.0 GHz 4×4 Butler Matrix designs in CMOS, the proposed design achieves the lowest insertion loss of 1.10dB, the smallest amplitude mismatch of 0.3 dB, the largest fractional bandwidth of 34.6%, and the smallest chip core area of 0.635×1.122 mm2. Based on the measured S-parameters, the four concurrent electrical array patterns of the Butler Matrix achieve array peak-to-null ratio (PNR) of 29.5 dB at 2.0 GHz and better than 15.0 dB between 1.55 GHz and 2.50 GHz.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82593771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540220
W. Mueller, R. Ruby
Carrier aggregation increases the requirements on filtering in LTE-A handsets. In particular, aggregation of two or more bands relatively close in frequency range can pose difficult problems. Multiplexers, filter structures sharing a common antenna port and supporting the filtering needs of multiple bands, are a possible answer. Bulk wave filtering in particular has the necessary performance characteristics needed to construct multiplexers. This paper analyzes the increased filtering needs encountered in same-frequency-range down link carrier aggregation, and presents some multiplexer structures that can meet those needs.
{"title":"Multiplexers as a method of supporting same-frequency-range down link carrier aggregation","authors":"W. Mueller, R. Ruby","doi":"10.1109/MWSYM.2016.7540220","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540220","url":null,"abstract":"Carrier aggregation increases the requirements on filtering in LTE-A handsets. In particular, aggregation of two or more bands relatively close in frequency range can pose difficult problems. Multiplexers, filter structures sharing a common antenna port and supporting the filtering needs of multiple bands, are a possible answer. Bulk wave filtering in particular has the necessary performance characteristics needed to construct multiplexers. This paper analyzes the increased filtering needs encountered in same-frequency-range down link carrier aggregation, and presents some multiplexer structures that can meet those needs.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"19 6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81260316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7539968
N. Mazor, O. Katz, R. Ben-Yishay, D. Liu, A. V. Garcia, D. Elad
Phase shifters are key components in phased array systems. A low loss and low loss variations SiGe differential phase shifter for the Ka-band is described. This bidirectional differential reflection type phase shifter (RTPS) design employs a novel diagonal configuration for the coupler and it is controlled by a single voltage node. The measured results show state of the art insertion loss of 5±1 dB, phase tuning range larger than 180 degrees, for a frequency range of 26.5 GHz to 32.8 GHz (21%). At 30 GHz, the phase shifter exhibits insertion loss of 4.8 dB, loss variation of ±0.4 dB, and more than 206 degrees of phase shift range. The RTPS was fabricated in a standard BiCMOS SiGe process and occupies 0.64 mm2 die area.
{"title":"SiGe based Ka-band reflection type phase shifter for integrated phased array transceivers","authors":"N. Mazor, O. Katz, R. Ben-Yishay, D. Liu, A. V. Garcia, D. Elad","doi":"10.1109/MWSYM.2016.7539968","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7539968","url":null,"abstract":"Phase shifters are key components in phased array systems. A low loss and low loss variations SiGe differential phase shifter for the Ka-band is described. This bidirectional differential reflection type phase shifter (RTPS) design employs a novel diagonal configuration for the coupler and it is controlled by a single voltage node. The measured results show state of the art insertion loss of 5±1 dB, phase tuning range larger than 180 degrees, for a frequency range of 26.5 GHz to 32.8 GHz (21%). At 30 GHz, the phase shifter exhibits insertion loss of 4.8 dB, loss variation of ±0.4 dB, and more than 206 degrees of phase shift range. The RTPS was fabricated in a standard BiCMOS SiGe process and occupies 0.64 mm2 die area.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"78 2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78654774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/mwsym.2016.7540415
Sadia Afroz, Kwang-Jin Koh
This paper presents a 90° hybrid-coupler based passive phase interpolator that is utilized to design a W-band 5-bit phase shifter in 0.13 μm SiGe BiCMOS process. In the proposed phase shifter, amplitude weighting is made first by VGAs. Then, a 90°-hybrid performs I/Q phase splitting and phase interpolation to synthesize all four quadrant phases. In this way, the accuracy of the phase synthesis is less vulnerable to an amplifier loading effect. Further, by cascading all building blocks with a low matched impedance the phase shifter will be less sensitive to parasitic capacitance, suitable for mm-Wave applications. The phase shifter is optimized for a transmitter application and the measured peak-to-peak gain variation for all 5-bit phase states is 4.8-9.7 dB at 94 GHz. The measured rms gain error is <; 1.6 dB over 93-108 GHz. The measured RMS phase error is <; 1.5° at 94 GHz. The input and output P-1dB is -13 dBm and -4.7 dBm, respectively, at 94 GHz. The chip consumes 37 mW from 2.2 V supply voltage. The chip size is 1.87×0.75 mm2.
{"title":"90° hybrid-coupler based phase-interpolation phase-shifter for phased-array applications at W-band and beyond","authors":"Sadia Afroz, Kwang-Jin Koh","doi":"10.1109/mwsym.2016.7540415","DOIUrl":"https://doi.org/10.1109/mwsym.2016.7540415","url":null,"abstract":"This paper presents a 90° hybrid-coupler based passive phase interpolator that is utilized to design a W-band 5-bit phase shifter in 0.13 μm SiGe BiCMOS process. In the proposed phase shifter, amplitude weighting is made first by VGAs. Then, a 90°-hybrid performs I/Q phase splitting and phase interpolation to synthesize all four quadrant phases. In this way, the accuracy of the phase synthesis is less vulnerable to an amplifier loading effect. Further, by cascading all building blocks with a low matched impedance the phase shifter will be less sensitive to parasitic capacitance, suitable for mm-Wave applications. The phase shifter is optimized for a transmitter application and the measured peak-to-peak gain variation for all 5-bit phase states is 4.8-9.7 dB at 94 GHz. The measured rms gain error is <; 1.6 dB over 93-108 GHz. The measured RMS phase error is <; 1.5° at 94 GHz. The input and output P-1dB is -13 dBm and -4.7 dBm, respectively, at 94 GHz. The chip consumes 37 mW from 2.2 V supply voltage. The chip size is 1.87×0.75 mm2.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76335910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540071
J. Byford, P. Chahal
A new wave guiding structure and fabrication technique is introduced for high speed, low loss, ultra-wideband interconnects. It is a hybrid between a dielectric ribbon and a substrate integrated waveguide design. In this structure, a high dielectric constant valued core is surrounded by a low dielectric constant valued cladding which in turn is surrounded by a metal layer. Both cylindrical and rectangular waveguide designs are presented. Simulation and measurement results show that ultra-wide band interconnects with low-dispersion can be designed using this hybrid approach. Fabrication of the cladding layer was carried out using 3D plastic printing. Simulated and measured results are discussed as well as fabrication techniques.
{"title":"Ultra-wideband hybrid substrate integrated ribbon waveguides using 3D printing","authors":"J. Byford, P. Chahal","doi":"10.1109/MWSYM.2016.7540071","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540071","url":null,"abstract":"A new wave guiding structure and fabrication technique is introduced for high speed, low loss, ultra-wideband interconnects. It is a hybrid between a dielectric ribbon and a substrate integrated waveguide design. In this structure, a high dielectric constant valued core is surrounded by a low dielectric constant valued cladding which in turn is surrounded by a metal layer. Both cylindrical and rectangular waveguide designs are presented. Simulation and measurement results show that ultra-wide band interconnects with low-dispersion can be designed using this hybrid approach. Fabrication of the cladding layer was carried out using 3D plastic printing. Simulated and measured results are discussed as well as fabrication techniques.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76394883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540042
M. Nagatani, H. Yamazaki, H. Wakita, H. Nosaka, K. Kurishima, M. Ida, A. Sano, Y. Miyamoto
An ultra-broadband 2:1 analog-multiplexer (A-MUX) module has been developed for optical communications systems with a high symbol rate. The A-MUX IC was designed and fabricated using in-house InP HBTs, which have a peak ft and fmax of 290 and 320 GHz, respectively. The A-MUX module has a through bandwidth of over 50 GHz and operates at a clock rate of up to 50 GHz, leading to 100-GS/s operation. Its power consumption is as small as 0.5 W. In addition, we devised a novel method to double the bandwidth of DACs using the A-MUX. We succeeded in generating an 80-Gbaud (160-Gb/s) Nyquist PAM4 signal based on two 20-GHz-bandwidth sub-DACs and this A-MUX.
{"title":"A 50-GHz-bandwidth InP-HBT analog-MUX module for high-symbol-rate optical communications systems","authors":"M. Nagatani, H. Yamazaki, H. Wakita, H. Nosaka, K. Kurishima, M. Ida, A. Sano, Y. Miyamoto","doi":"10.1109/MWSYM.2016.7540042","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540042","url":null,"abstract":"An ultra-broadband 2:1 analog-multiplexer (A-MUX) module has been developed for optical communications systems with a high symbol rate. The A-MUX IC was designed and fabricated using in-house InP HBTs, which have a peak ft and fmax of 290 and 320 GHz, respectively. The A-MUX module has a through bandwidth of over 50 GHz and operates at a clock rate of up to 50 GHz, leading to 100-GS/s operation. Its power consumption is as small as 0.5 W. In addition, we devised a novel method to double the bandwidth of DACs using the A-MUX. We succeeded in generating an 80-Gbaud (160-Gb/s) Nyquist PAM4 signal based on two 20-GHz-bandwidth sub-DACs and this A-MUX.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"7 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87816614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-22DOI: 10.1109/MWSYM.2016.7540408
Ramon A. Beltran
A transmission-line loading network for class-E amplifiers is presented. In this work, a GaN FET device with a parasitic drain capacitance of 4-pF is used at 1-GHz design frequency for 20-W output power at 20-V DC supply voltage. A finite inductive reactance DC-feed class-E amplifier output network is designed based upon wire-lines and then modified using transmission-line transforms. The final network topology is managed so that it contains specific transmission-line impedances suitable for breadboarding employing air-suspended brass-bars so that no dielectric is used. The network presents the proper impedance at the device intrinsic drain and at the same time serves as broadband matching to 50-Ohms. The resultant measured performance of 80% efficiency or higher and flat output power over wide bandwidth (760-1060 MHz) is presented.
{"title":"Transmission-line broadband GaN FET class-E power amplifier","authors":"Ramon A. Beltran","doi":"10.1109/MWSYM.2016.7540408","DOIUrl":"https://doi.org/10.1109/MWSYM.2016.7540408","url":null,"abstract":"A transmission-line loading network for class-E amplifiers is presented. In this work, a GaN FET device with a parasitic drain capacitance of 4-pF is used at 1-GHz design frequency for 20-W output power at 20-V DC supply voltage. A finite inductive reactance DC-feed class-E amplifier output network is designed based upon wire-lines and then modified using transmission-line transforms. The final network topology is managed so that it contains specific transmission-line impedances suitable for breadboarding employing air-suspended brass-bars so that no dielectric is used. The network presents the proper impedance at the device intrinsic drain and at the same time serves as broadband matching to 50-Ohms. The resultant measured performance of 80% efficiency or higher and flat output power over wide bandwidth (760-1060 MHz) is presented.","PeriodicalId":6554,"journal":{"name":"2016 IEEE MTT-S International Microwave Symposium (IMS)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87847445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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