Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925144
A. Volk, William Glover, J. Greulich, S. Gutscher, W. Wolke, M. Zimmer, J. Rentsch, H. Reinecke
In this study we assess the reproducibility of the honeycomb texturing process, and we compare experimental values to a simulation. Our results show that the honeycomb-texture can be simulated with the OPAL program. It calculates the losses of any angle of incidence, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equation. We investigate various surface morphologies and their impact on reflection values. The samples were etched at different etching times, whereby the honeycomb geometries were changed. Using our optimal acid etching solution ratio, we are able to fabricate a HC-texture with a reflectivity of R = 19.4 % (ω = 85°). Between the simulation values and those of the measurement, we see a difference of R = 0.3 %abs. This small deviation causes the relatively inaccuracies of the simulation and the measured samples. The focus is to simulate the different honeycomb structures and compare the values with the experimental values.
{"title":"Optical modelling of the front surface for honeycomb-textured silicon solar cells","authors":"A. Volk, William Glover, J. Greulich, S. Gutscher, W. Wolke, M. Zimmer, J. Rentsch, H. Reinecke","doi":"10.1109/PVSC.2014.6925144","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925144","url":null,"abstract":"In this study we assess the reproducibility of the honeycomb texturing process, and we compare experimental values to a simulation. Our results show that the honeycomb-texture can be simulated with the OPAL program. It calculates the losses of any angle of incidence, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equation. We investigate various surface morphologies and their impact on reflection values. The samples were etched at different etching times, whereby the honeycomb geometries were changed. Using our optimal acid etching solution ratio, we are able to fabricate a HC-texture with a reflectivity of R = 19.4 % (ω = 85°). Between the simulation values and those of the measurement, we see a difference of R = 0.3 %abs. This small deviation causes the relatively inaccuracies of the simulation and the measured samples. The focus is to simulate the different honeycomb structures and compare the values with the experimental values.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"2 1","pages":"1260-1264"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77598695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6924894
T. Bertram, V. Deprédurand, S. Siebentritt
This work focuses on the chalcopyrite CuInSe2 as a model for the more complex but also more widely used thin-film material Cu(In,Ga)Se2. Both materials are characterized by a very broad existence region that allows Cu-poor as well as stoichiometric growth. Although Cu-poor solar cells are more studied and commercially available, Cu-rich CuInSe2 exhibits qualities that make it the superior material. But due to an inherently high doping and interface problems, it has not been possible to take advantage of these. On the other hand it has been shown in previous studies, that forming a Cu-poor surface layer on Cu-rich grown CuInSe2-absorbers can greatly improve the open-circuit voltage of these solar cells. Surface treatments will be discussed, that are comprised of an indium and selenium co-deposition stage with the goal to form the Cu-poor layer by copper migration. They were performed on a new Cu-rich material, which is characterized by a low Se environment during growth. Through this it was possible to reduce the doping level greatly, which results in reliably delivering devices with high currents. Making them excellent candidates for interface optimization, that mainly effects the open-circuit voltage. Thus it became possible to produce high efficiency Cu-rich devices. There is still room for improvement though, as the devices show absorption losses in a wavelength region in accordance with a remainder of InSe on top of the CIS surface. Optimization of the process is a straightforward approach to remove this layer and shows potential for even greater efficiencies. Still the striking point is, that the here presented solar cells, are already as efficient as the Cu-poor devices, that have been published by our group.
{"title":"In-Se surface treatment of Cu-rich grown CuInSe2","authors":"T. Bertram, V. Deprédurand, S. Siebentritt","doi":"10.1109/PVSC.2014.6924894","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924894","url":null,"abstract":"This work focuses on the chalcopyrite CuInSe2 as a model for the more complex but also more widely used thin-film material Cu(In,Ga)Se2. Both materials are characterized by a very broad existence region that allows Cu-poor as well as stoichiometric growth. Although Cu-poor solar cells are more studied and commercially available, Cu-rich CuInSe2 exhibits qualities that make it the superior material. But due to an inherently high doping and interface problems, it has not been possible to take advantage of these. On the other hand it has been shown in previous studies, that forming a Cu-poor surface layer on Cu-rich grown CuInSe2-absorbers can greatly improve the open-circuit voltage of these solar cells. Surface treatments will be discussed, that are comprised of an indium and selenium co-deposition stage with the goal to form the Cu-poor layer by copper migration. They were performed on a new Cu-rich material, which is characterized by a low Se environment during growth. Through this it was possible to reduce the doping level greatly, which results in reliably delivering devices with high currents. Making them excellent candidates for interface optimization, that mainly effects the open-circuit voltage. Thus it became possible to produce high efficiency Cu-rich devices. There is still room for improvement though, as the devices show absorption losses in a wavelength region in accordance with a remainder of InSe on top of the CIS surface. Optimization of the process is a straightforward approach to remove this layer and shows potential for even greater efficiencies. Still the striking point is, that the here presented solar cells, are already as efficient as the Cu-poor devices, that have been published by our group.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"146 1","pages":"3633-3636"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77708022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6924924
P. Bras, J. Sterner
Sputtering Cu2ZnSnS4 absorbers from a quaternary compound target has not been deeply investigated yet although it is a fast process that could be adapted to an industrial scale. We propose a new approach based on an in-line vacuum system for the complete device. The effects of H2S annealing parameters as well as buffer type are investigated. We present a 4.2% efficiency device based on stainless steel substrate.
{"title":"Influence of H2S annealing and buffer layer on CZTS solar cells sputtered from a quaternary compound target","authors":"P. Bras, J. Sterner","doi":"10.1109/PVSC.2014.6924924","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924924","url":null,"abstract":"Sputtering Cu2ZnSnS4 absorbers from a quaternary compound target has not been deeply investigated yet although it is a fast process that could be adapted to an industrial scale. We propose a new approach based on an in-line vacuum system for the complete device. The effects of H2S annealing parameters as well as buffer type are investigated. We present a 4.2% efficiency device based on stainless steel substrate.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"64 1","pages":"0328-0331"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77907866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925185
J. Hernández, C. Arredondo, W. Vallejo
This paper briefly describes the operation curves of some PV modules under actual irradiance conditions and temperature in 10 Colombian cities. Those curves were obtained from a Virtual Instrument (VI) developed in LabVIEW®. With the collected information from the VI, the cities were classified taking into account 5 parameters: solar irradiance, temperature, variability of solar resource, maximum power point and Photovoltaic (PV) modules efficiency in the cities. From the VI, an analytical methodology was developed to identify the technical potential of some regions for the implementation and development of grid connected PV systems. Additionally, users were able to get information on the solar irradiance potential, helping to achieve an accurate design of the PV systems.
{"title":"Technical potential of some Colombian cities for the development of grid connected PV systems through virtual instrumentation","authors":"J. Hernández, C. Arredondo, W. Vallejo","doi":"10.1109/PVSC.2014.6925185","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925185","url":null,"abstract":"This paper briefly describes the operation curves of some PV modules under actual irradiance conditions and temperature in 10 Colombian cities. Those curves were obtained from a Virtual Instrument (VI) developed in LabVIEW®. With the collected information from the VI, the cities were classified taking into account 5 parameters: solar irradiance, temperature, variability of solar resource, maximum power point and Photovoltaic (PV) modules efficiency in the cities. From the VI, an analytical methodology was developed to identify the technical potential of some regions for the implementation and development of grid connected PV systems. Additionally, users were able to get information on the solar irradiance potential, helping to achieve an accurate design of the PV systems.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"18 1","pages":"1430-1435"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80241545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High-performance MOS-structure silicon (Si) P/N-junction solar cell integrated with the photovoltaic-biasing source on the ceramic-substrate is demonstrated for the first time. The photovoltaic-biasing source was consisted of a series of small-area Si-solar-cells using die-bonding and wire-bonding integrated techniques and its output provides a photovoltaic voltage to bias the MOS-structure Si solar cell. The biasing voltage was changed from 0.55 V (one cell) to 2.75 V (five cells series connected). At photovoltaic biasing of 2.75 V, the short-circuit-current enhancement (ΔIsc) of 55.1% and conversion-efficiency enhancement (Δη) of 45.2% are obtained, compared to the MOS-structure Si solar cell with 0 V biasing.
{"title":"Performance enhanced of MOS-structure silicon solar cell based on the integration of photovoltaic biasing source","authors":"W. Ho, Min-Chun Huang, Guo-Chang Yang, Chia-Ming Chan, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao","doi":"10.1109/PVSC.2014.6925597","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925597","url":null,"abstract":"High-performance MOS-structure silicon (Si) P/N-junction solar cell integrated with the photovoltaic-biasing source on the ceramic-substrate is demonstrated for the first time. The photovoltaic-biasing source was consisted of a series of small-area Si-solar-cells using die-bonding and wire-bonding integrated techniques and its output provides a photovoltaic voltage to bias the MOS-structure Si solar cell. The biasing voltage was changed from 0.55 V (one cell) to 2.75 V (five cells series connected). At photovoltaic biasing of 2.75 V, the short-circuit-current enhancement (ΔIsc) of 55.1% and conversion-efficiency enhancement (Δη) of 45.2% are obtained, compared to the MOS-structure Si solar cell with 0 V biasing.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"23 1","pages":"0213-0215"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79056263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925605
Ahmad Alferidi, Y. Mohamed
The electric power system produced by Photovoltaic (PV) system is being gradually utilized in power system network with different Photovoltaic configuration. The central Photovoltaic inverter system is designed in large scale of solar power. This system has a different impact on system reliability than conventional generation due the intermittent nature of geographical locations and the availability of PV electronic system. It is therefore vital to evaluate the reliability contribution of central PV system in electric power system network taken into account entire PV system components. This project uses a probabilistic and Part-Count approach to develop the output power of central PV system. A developed model is then applied to Small Isolated Power System (SIPS) to study the system adequacy and the capacity credit of installing Photovoltaic units.
{"title":"The reliability assessment of central photovoltaic inverter in electric power system","authors":"Ahmad Alferidi, Y. Mohamed","doi":"10.1109/PVSC.2014.6925605","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925605","url":null,"abstract":"The electric power system produced by Photovoltaic (PV) system is being gradually utilized in power system network with different Photovoltaic configuration. The central Photovoltaic inverter system is designed in large scale of solar power. This system has a different impact on system reliability than conventional generation due the intermittent nature of geographical locations and the availability of PV electronic system. It is therefore vital to evaluate the reliability contribution of central PV system in electric power system network taken into account entire PV system components. This project uses a probabilistic and Part-Count approach to develop the output power of central PV system. A developed model is then applied to Small Isolated Power System (SIPS) to study the system adequacy and the capacity credit of installing Photovoltaic units.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"98 1","pages":"3156-3161"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79244081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925091
Staffan D. Hellstroem, S. Hubbard
We present drift-diffusion simulations of InAs QDs embedded in AlAsSb, which is a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal, a nearly flat type-II valence band lineup. Absorption coefficients calculated by the 8-band k.p method have been used, along with. It is concluded that state-of-art InAs/AlAsSb QDs can only provide modest efficiency increases far below what Detailed-Balance theory predicts, and that the major reason for the discrepancy comes from the idealized modeling of wavelength-independent absorption often used, which fail to capture imbalances in the absorption coefficient. A few possibilities for improving the performance are presented.
{"title":"Drift-diffusion simulations of InAs/AlAsSb quantum dot intermediate-band solar cells","authors":"Staffan D. Hellstroem, S. Hubbard","doi":"10.1109/PVSC.2014.6925091","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925091","url":null,"abstract":"We present drift-diffusion simulations of InAs QDs embedded in AlAsSb, which is a promising candidate system for realizing intermediate band solar cells as it features bandgaps close to the ideal, a nearly flat type-II valence band lineup. Absorption coefficients calculated by the 8-band k.p method have been used, along with. It is concluded that state-of-art InAs/AlAsSb QDs can only provide modest efficiency increases far below what Detailed-Balance theory predicts, and that the major reason for the discrepancy comes from the idealized modeling of wavelength-independent absorption often used, which fail to capture imbalances in the absorption coefficient. A few possibilities for improving the performance are presented.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"1037-1040"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79409819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925373
John V. Lloyd, Emily D. Kosten, Emily C. Warmann, C. Flowers, H. Atwater
A ray trace model of the light trapping filtered concentrator spectrum splitting architecture is presented. The scripted ray trace allows for examination of non-idealities in materials and design that were not addressed in previous analytical investigations of this optical design. The design of the angle restricting elements is examined with regards to optical efficiency and system efficiency. In addition, the scripted ray trace enables rapid evaluation of multiple candidate filter sets and optimization of the optical design for each set via a gradient ascent algorithm. A discussion of filter design considerations and insight provided by the ray trace model evaluations is presented.
{"title":"Ray trace optimization of a light trapping filtered concentrator for spectrum splitting photovoltaics","authors":"John V. Lloyd, Emily D. Kosten, Emily C. Warmann, C. Flowers, H. Atwater","doi":"10.1109/PVSC.2014.6925373","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925373","url":null,"abstract":"A ray trace model of the light trapping filtered concentrator spectrum splitting architecture is presented. The scripted ray trace allows for examination of non-idealities in materials and design that were not addressed in previous analytical investigations of this optical design. The design of the angle restricting elements is examined with regards to optical efficiency and system efficiency. In addition, the scripted ray trace enables rapid evaluation of multiple candidate filter sets and optimization of the optical design for each set via a gradient ascent algorithm. A discussion of filter design considerations and insight provided by the ray trace model evaluations is presented.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"12 1","pages":"2249-2252"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84368521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925668
M. Lumb, M. González, J. Abell, K. Schmieder, J. Tischler, D. Scheiman, M. Yakes, I. Vurgaftman, J. Meyer, R. Walters
In this paper we present the first photovoltaic devices made from the promising quaternary InAlAsSb, grown lattice matched to InP by molecular beam epitaxy. Schottky barrier solar cells using semi-transparent contacts have been fabricated, characterized and simulated using a drift-diffusion model to extract information about the barrier height, minority carrier diffusion length and optical performance of devices fabricated from this material. We have compared the performance to analogous InAlAs devices, and present a wide range of optical and electrical characterization for the materials.
{"title":"Characterization, modeling and analysis of InAlAsSb Schottky barrier solar cells grown on InP","authors":"M. Lumb, M. González, J. Abell, K. Schmieder, J. Tischler, D. Scheiman, M. Yakes, I. Vurgaftman, J. Meyer, R. Walters","doi":"10.1109/PVSC.2014.6925668","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925668","url":null,"abstract":"In this paper we present the first photovoltaic devices made from the promising quaternary InAlAsSb, grown lattice matched to InP by molecular beam epitaxy. Schottky barrier solar cells using semi-transparent contacts have been fabricated, characterized and simulated using a drift-diffusion model to extract information about the barrier height, minority carrier diffusion length and optical performance of devices fabricated from this material. We have compared the performance to analogous InAlAs devices, and present a wide range of optical and electrical characterization for the materials.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"33 1","pages":"0243-0246"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84480631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925594
Y. Erkaya, Isaac L. Flory, S. Marsillac
Monitoring systems with high precision and high reliability are of great importance in the interest of harnessing solar power with ever increasing power outputs and efficiencies. Typical monitoring systems do not allow for the tracing and analysis of I-V curves. A portable and light-weight method for tracing I-V curves of photovoltaic strings has been developed using a capacitive load.
{"title":"Development of a string level I–V curve tracer","authors":"Y. Erkaya, Isaac L. Flory, S. Marsillac","doi":"10.1109/PVSC.2014.6925594","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925594","url":null,"abstract":"Monitoring systems with high precision and high reliability are of great importance in the interest of harnessing solar power with ever increasing power outputs and efficiencies. Typical monitoring systems do not allow for the tracing and analysis of I-V curves. A portable and light-weight method for tracing I-V curves of photovoltaic strings has been developed using a capacitive load.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"60 1","pages":"3104-3107"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84519899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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