Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925291
M. Váry, J. Huran, M. Perný, M. Mikolasek, V. Šály, J. Packa, A. Kobzev
The heterojunction structure which consists of amorphous SiC layer deposited on p-type silicon substrate was prepared at various substrate temperatures and studied to optimize the technology and improve the quality of the interface. Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection (ERD) structural analysis was employed in determination the concentrations of elements. Current-voltage (I-V) measurements were processed in order to obtained basic electric and PV parameters of prepared samples. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction in the dark are reported and analyzed. AC measurements in the dark conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting of measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.
{"title":"Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD","authors":"M. Váry, J. Huran, M. Perný, M. Mikolasek, V. Šály, J. Packa, A. Kobzev","doi":"10.1109/PVSC.2014.6925291","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925291","url":null,"abstract":"The heterojunction structure which consists of amorphous SiC layer deposited on p-type silicon substrate was prepared at various substrate temperatures and studied to optimize the technology and improve the quality of the interface. Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection (ERD) structural analysis was employed in determination the concentrations of elements. Current-voltage (I-V) measurements were processed in order to obtained basic electric and PV parameters of prepared samples. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction in the dark are reported and analyzed. AC measurements in the dark conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting of measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"87 1","pages":"1879-1883"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74289011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925564
A. Morishige, D. Fenning, J. Hofstetter, M. Ann Jensen, S. Ramanathan, Chenlei Wang, B. Lai, T. Buonassisi
Solar cells based on n-type upgraded metallurgical grade multicrystalline silicon (mc-Si) substrates may be a promising path for reducing the cost per watt of photovoltaics. The detrimental effect of metal point defects in both n- and p-type silicon is known, but the recombination activity of metal-silicide precipitates, especially in n-type mc-Si, is still not well established, impeding modeling and process optimization efforts. In this contribution, we provide a rationale for why metal-rich precipitates may limit minority-carrier lifetime in n-type mc-Si, in contrast to as-grown p-type mc-Si, which is dominated by metal point defects. Using μ-XRF, we identify metal-rich precipitates along a recombination active grain boundary in the low-lifetime “red zone” region of n-type wafers from a corner brick. To reduce the concentration of precipitated metals, we phosphorus-diffuse the wafers. Grain boundaries remain recombination active, which may be attributed to incomplete gettering of point defects and dissolution of recombination-active metal-rich precipitates.
{"title":"Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon","authors":"A. Morishige, D. Fenning, J. Hofstetter, M. Ann Jensen, S. Ramanathan, Chenlei Wang, B. Lai, T. Buonassisi","doi":"10.1109/PVSC.2014.6925564","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925564","url":null,"abstract":"Solar cells based on n-type upgraded metallurgical grade multicrystalline silicon (mc-Si) substrates may be a promising path for reducing the cost per watt of photovoltaics. The detrimental effect of metal point defects in both n- and p-type silicon is known, but the recombination activity of metal-silicide precipitates, especially in n-type mc-Si, is still not well established, impeding modeling and process optimization efforts. In this contribution, we provide a rationale for why metal-rich precipitates may limit minority-carrier lifetime in n-type mc-Si, in contrast to as-grown p-type mc-Si, which is dominated by metal point defects. Using μ-XRF, we identify metal-rich precipitates along a recombination active grain boundary in the low-lifetime “red zone” region of n-type wafers from a corner brick. To reduce the concentration of precipitated metals, we phosphorus-diffuse the wafers. Grain boundaries remain recombination active, which may be attributed to incomplete gettering of point defects and dissolution of recombination-active metal-rich precipitates.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"17 1","pages":"3004-3007"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74337134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925563
M. Mohammed, A. Al-Hilo, Tar-Pin Chen
We have used electro-deposition, a simple and effective method, to fabricate a NiOx/graphene (PMS) bilayer Shottcky junction. An n-Si/graphene (NMS) Shottcky junction was then deposited on top of the NiOx/graphene bilayer Shottcky junction to form a double Shottcky solar cell. This double Shottcky combination thus contains an n-type Si/grphene (NMS) Shottcky junction and a p-type NiOx/graphene (PMS) Shottcky junction, an overall n-p junction. The thicknesses of the NiOx film are different for different junctions. The NiOx films performed excellently as the p-type substance for the solar cells. SEM, EDX, UV, XRD, and Raman techniques were used to study the physical properties of these solar cell materials and devices. I-V studies were also carried out on these samples. The I-V characteristic curves show that the power conversion efficiency improves when the thickness of NiOx thin film is increased.
{"title":"Double Shottcky of NiOx/graphene/Si for enhance efficiency solar cells","authors":"M. Mohammed, A. Al-Hilo, Tar-Pin Chen","doi":"10.1109/PVSC.2014.6925563","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925563","url":null,"abstract":"We have used electro-deposition, a simple and effective method, to fabricate a NiOx/graphene (PMS) bilayer Shottcky junction. An n-Si/graphene (NMS) Shottcky junction was then deposited on top of the NiOx/graphene bilayer Shottcky junction to form a double Shottcky solar cell. This double Shottcky combination thus contains an n-type Si/grphene (NMS) Shottcky junction and a p-type NiOx/graphene (PMS) Shottcky junction, an overall n-p junction. The thicknesses of the NiOx film are different for different junctions. The NiOx films performed excellently as the p-type substance for the solar cells. SEM, EDX, UV, XRD, and Raman techniques were used to study the physical properties of these solar cell materials and devices. I-V studies were also carried out on these samples. The I-V characteristic curves show that the power conversion efficiency improves when the thickness of NiOx thin film is increased.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"6 1","pages":"2998-3003"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72737324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925363
Jea-Young Choi, C. Honsberg
We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N,N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.
{"title":"Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management","authors":"Jea-Young Choi, C. Honsberg","doi":"10.1109/PVSC.2014.6925363","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925363","url":null,"abstract":"We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N,N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"2206-2208"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72819210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925131
S. Bernardini, Adrienne L. Blum, M. Bertoni
The effect of temperature on the surface passivation of p-type and n-type monocrystalline silicon is evaluated by temperature dependent photoconductance decay (PCD). Wafers with different passivation layers, i.e. a-Si and SiNx are the subject of these studies. A characteristic lifetime increment is observed for p-type samples coated with a-Si(i) when compared to substrates passivated with SiNx, in agreement with previous literature reports. A different behavior is measured for the case of n-type samples, which show comparable lifetimes among samples with different passivation layers. An interesting lifetime increment is also found at high injection levels for n-type substrates coated with a-Si(i).
用温度相关光导衰减(PCD)方法研究了温度对p型和n型单晶硅表面钝化的影响。具有不同钝化层的晶圆，即a-Si和SiNx是这些研究的主题。与用SiNx钝化的衬底相比，用A - si (i)涂层的p型样品的特征寿命增加，与先前的文献报道一致。在不同钝化层的样品中，测量了n型样品的不同行为，显示了相当的寿命。对于涂有a-Si(i)的n型衬底，在高注射水平下也发现了一个有趣的寿命增量。
{"title":"Evaluation of passivation layers via temperature-dependent lifetime measurements","authors":"S. Bernardini, Adrienne L. Blum, M. Bertoni","doi":"10.1109/PVSC.2014.6925131","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925131","url":null,"abstract":"The effect of temperature on the surface passivation of p-type and n-type monocrystalline silicon is evaluated by temperature dependent photoconductance decay (PCD). Wafers with different passivation layers, i.e. a-Si and SiNx are the subject of these studies. A characteristic lifetime increment is observed for p-type samples coated with a-Si(i) when compared to substrates passivated with SiNx, in agreement with previous literature reports. A different behavior is measured for the case of n-type samples, which show comparable lifetimes among samples with different passivation layers. An interesting lifetime increment is also found at high injection levels for n-type substrates coated with a-Si(i).","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"41 1","pages":"1206-1210"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73371359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925549
C. Berthod, J. Odden, T. O. Saetre
Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.
{"title":"Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells","authors":"C. Berthod, J. Odden, T. O. Saetre","doi":"10.1109/PVSC.2014.6925549","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925549","url":null,"abstract":"Solar cells from an identical commercial manufacturing unit have been investigated by electroluminescence to first detect the defect clusters. A further analysis has been done by scanning electron microscopy in secondary electron imaging mode to understand the propagation mechanism of defects. It appears that defect cluster boundaries can be very sharp or spread in the bulk with little apparent effect on the overall cell efficiency. And it is shown that grain boundaries act clearly as arrests to further propagation of these defects.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"7 1","pages":"2947-2950"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73656304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6924947
F. Dimroth, T. Tibbits, Paul Beutel, C. Karcher, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, M. Steiner, M. Wiesenfarth, A. Bett, R. Krause, E. Gerster, M. Piccin, N. Blanc, M. Rico, C. Drazek, E. Guiot, J. Wasselin, C. Arena, T. Salvetat, A. Tauzin, T. Signamarcheix, T. Hannappel
The next generation of multi-junction concentrator solar cells will have to reach higher efficiencies than today's devices. At the same time these solar cells must be reliable in the field, be manufacturable with good yield and at sufficiently low cost. Inevitably the request of higher efficiency requires four or even more junction devices. A four-junction solar cell combination of GaInP/GaAs//GaInAsP/GaInAs with bandgap energies of 1.9, 1.4, 1.1, 0.7 eV is developed in a close collaboration between the Fraunhofer ISE, Soitec, CEA-LETI and HZB. This 4-junction cell hits close to the optimum of theoretical efficiency contour plots and has the potential to reach efficiencies up to 50 % under concentration. Challenges are associated with lattice-mismatch between GaAs and InP which is overcome by direct wafer-bonding. The high cost of the InP is addressed by the use of engineered substrates which only require a 500 nm thin mono-crystalline InP layer instead of several hundred μm. Excellent solar cell results up to 44.7 % efficiency have been obtained under concentration for devices manufactured on InP bulk substrates. The high cell efficiency is also supported by out-door characterization of one cell below a Fresnel lens with 16 cm2 aperture area. 38.5 % conversion efficiency has been measured for this mono-module in Freiburg under real operating conditions without any corrections.
下一代多结聚光太阳能电池必须达到比今天的设备更高的效率。与此同时，这些太阳能电池必须在现场可靠，产量高，成本足够低。提高效率的要求不可避免地需要四个甚至更多的结器件。在Fraunhofer ISE, Soitec, CEA-LETI和HZB的密切合作下，开发了一种带隙能量为1.9,1.4,1.1,0.7 eV的GaInP/GaAs//GaInAsP/GaInAs的四结太阳能电池。这种4结电池接近理论效率轮廓图的最佳值，并且在浓度下有可能达到高达50%的效率。挑战与GaAs和InP之间的晶格不匹配有关，这是通过直接晶圆键合来克服的。InP的高成本是通过使用工程衬底来解决的，它只需要500纳米薄的单晶InP层，而不是几百μm。对于在InP基片上制造的器件，在浓缩条件下获得了高达44.7%的效率。高电池效率也支持了一个菲涅耳透镜下的一个电池的室外表征，孔径面积为16平方厘米。该单模组在弗莱堡实际运行条件下的转换效率为38.5%，没有任何修正。
{"title":"Development of high efficiency wafer bonded 4-junction solar cells for concentrator photovoltaic applications","authors":"F. Dimroth, T. Tibbits, Paul Beutel, C. Karcher, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, M. Steiner, M. Wiesenfarth, A. Bett, R. Krause, E. Gerster, M. Piccin, N. Blanc, M. Rico, C. Drazek, E. Guiot, J. Wasselin, C. Arena, T. Salvetat, A. Tauzin, T. Signamarcheix, T. Hannappel","doi":"10.1109/PVSC.2014.6924947","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924947","url":null,"abstract":"The next generation of multi-junction concentrator solar cells will have to reach higher efficiencies than today's devices. At the same time these solar cells must be reliable in the field, be manufacturable with good yield and at sufficiently low cost. Inevitably the request of higher efficiency requires four or even more junction devices. A four-junction solar cell combination of GaInP/GaAs//GaInAsP/GaInAs with bandgap energies of 1.9, 1.4, 1.1, 0.7 eV is developed in a close collaboration between the Fraunhofer ISE, Soitec, CEA-LETI and HZB. This 4-junction cell hits close to the optimum of theoretical efficiency contour plots and has the potential to reach efficiencies up to 50 % under concentration. Challenges are associated with lattice-mismatch between GaAs and InP which is overcome by direct wafer-bonding. The high cost of the InP is addressed by the use of engineered substrates which only require a 500 nm thin mono-crystalline InP layer instead of several hundred μm. Excellent solar cell results up to 44.7 % efficiency have been obtained under concentration for devices manufactured on InP bulk substrates. The high cell efficiency is also supported by out-door characterization of one cell below a Fresnel lens with 16 cm2 aperture area. 38.5 % conversion efficiency has been measured for this mono-module in Freiburg under real operating conditions without any corrections.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"12 1","pages":"0006-0010"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73683458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925253
Robert E. Treharne, A. Clayton, L. Phillips, J. Major, S. Irvine, K. Durose
A combinatorial methodology has been adopted to determine the optimum composition of a Cd(1-x)ZnxS window layer for CdTe solar cells. The methodology generated a large, self consistent dataset which permitted an unambiguous relationship between x, conversion efficiency and related cell parameters to be determined. An optimum composition of x = 0.57 was shown to maximise cell efficiency. Analysis of J - V curves, measured over 72 separate cells show that both short circuit current, JSC, and fill factor, FF, values increase with respect to x over the range 0.1-0.57. EQE measurements show that further increases in JSC value are limited by the band gap of the highly resistive transparent (HRT) ZnO layer. The methodology demonstrates a rapid route, compared to conventional experiments, to the further optimisation of CdTe solar cells.
{"title":"A combinatorial approach to the optimisation of Cd(1−x)ZnxS layers for CdTe solar cells","authors":"Robert E. Treharne, A. Clayton, L. Phillips, J. Major, S. Irvine, K. Durose","doi":"10.1109/PVSC.2014.6925253","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925253","url":null,"abstract":"A combinatorial methodology has been adopted to determine the optimum composition of a Cd(1-x)ZnxS window layer for CdTe solar cells. The methodology generated a large, self consistent dataset which permitted an unambiguous relationship between x, conversion efficiency and related cell parameters to be determined. An optimum composition of x = 0.57 was shown to maximise cell efficiency. Analysis of J - V curves, measured over 72 separate cells show that both short circuit current, JSC, and fill factor, FF, values increase with respect to x over the range 0.1-0.57. EQE measurements show that further increases in JSC value are limited by the band gap of the highly resistive transparent (HRT) ZnO layer. The methodology demonstrates a rapid route, compared to conventional experiments, to the further optimisation of CdTe solar cells.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"9 1","pages":"1722-1725"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74001602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925672
Ryan W. Crisp, Matthew G. Panthani, J. Berry, W. Rance, J. Duenow, D. Talapin, J. Luther
We have furthered the development of CdTe nanocrystals (NCs) to create bulk, sintered films for ink-based solar cells. Here, respectable efficiencies of >10% have been achieved in devices where CdTe tetrapods are spincoated from pyridine, treated with CdCl2 and briefly annealed. We have inserted these NC-based CdTe layers into more than three device geometries with various contact layers. In one structure, we determine that there is a unique interface that forms between the ITO layer and CdTe layer providing excellent ohmic hole contact after a brief light soak in forward bias. Moreover, the devices have an impressive blue-response in comparison to standard CdTe solar cells despite having the junction at the back of the optical path rather than as a window layer.
{"title":"Nanoscale engineering of solution-processed CdTe solar cells using nanocrystalline precursors","authors":"Ryan W. Crisp, Matthew G. Panthani, J. Berry, W. Rance, J. Duenow, D. Talapin, J. Luther","doi":"10.1109/PVSC.2014.6925672","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925672","url":null,"abstract":"We have furthered the development of CdTe nanocrystals (NCs) to create bulk, sintered films for ink-based solar cells. Here, respectable efficiencies of >10% have been achieved in devices where CdTe tetrapods are spincoated from pyridine, treated with CdCl2 and briefly annealed. We have inserted these NC-based CdTe layers into more than three device geometries with various contact layers. In one structure, we determine that there is a unique interface that forms between the ITO layer and CdTe layer providing excellent ohmic hole contact after a brief light soak in forward bias. Moreover, the devices have an impressive blue-response in comparison to standard CdTe solar cells despite having the junction at the back of the optical path rather than as a window layer.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"16 1","pages":"3438-3441"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79086730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925040
G. Yordanov, T. O. Saetre, O. Midtgård
We measured an extreme overirradiance event of 1.6 suns at latitude 58°20'N during a solar resource assessment in southern Norway. The burst occurred when the sun showed in a narrow gap between broken, optically thin altocumulus clouds. The enhancement was most intense within 3° around the solar disk. The annual solar irradiation in the plane of an optimally tilted PV array peaked at 1.30 MWh/m2 in the year 2013, and measured 1.20 MWh/m2 in the previous two years. These values exclude irradiance below 0.05 suns but include reflections from the sea surface and terrain which have not been quantified. The long-term average predicted by the Photovoltaic Geographical Information System (PVGIS) is only 1.04 MWh/m2. 15 years of global horizontal irradiation data reveal that the PVGIS underestimates the local solar resource by at least 10%.
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