Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925296
M. Gerber, R. Kleiman
Using a monostable multivibrator, the signal-dependent afterpulsing background from a single photon avalanche diode was suppressed. This digital filter gate was characterized and optimized using photoluminescence decay lifetime measurements to show a reduction in systematic error that is 25% of the measured lifetime and ~500X improvement in acquisition time when compared with the time taken to obtain a comparably reliable result by reduction of the repetition rate to suppress afterpulsing. At 10 MHz, there is an increase in the linear dynamic range from ~2τ to ~6τ, where the lifetime, t, was measured to be (5.0±0.1)ns. Lifetime measurements were performed with a pulsed 510 nm diode laser, a 500 nm GaAs layer (sandwiched between InGaP capping layers), a silicon single-photon avalanche photodiode and time-correlated single photon counting electronics.
{"title":"Afterpulse background suppression in time-correlated single photon counting lifetime experiments using optimized gate filter","authors":"M. Gerber, R. Kleiman","doi":"10.1109/PVSC.2014.6925296","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925296","url":null,"abstract":"Using a monostable multivibrator, the signal-dependent afterpulsing background from a single photon avalanche diode was suppressed. This digital filter gate was characterized and optimized using photoluminescence decay lifetime measurements to show a reduction in systematic error that is 25% of the measured lifetime and ~500X improvement in acquisition time when compared with the time taken to obtain a comparably reliable result by reduction of the repetition rate to suppress afterpulsing. At 10 MHz, there is an increase in the linear dynamic range from ~2τ to ~6τ, where the lifetime, t, was measured to be (5.0±0.1)ns. Lifetime measurements were performed with a pulsed 510 nm diode laser, a 500 nm GaAs layer (sandwiched between InGaP capping layers), a silicon single-photon avalanche photodiode and time-correlated single photon counting electronics.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"38 1","pages":"1899-1902"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72895547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925037
B. Patnaik, U. Aswani, G. Sarkar, S. Duttagupta
In this paper, we studied Solar Photovoltaic (SPV) array output power as a function of dynamic illumination intensity pattern. A fine resolution pixel level analysis of 2D dynamic illumination intensity pattern is mapped to the module architecture. Images taken by high resolution cameras at regular intervals will help track the iso-insolation contours by mapping pixel pattern and estimate the illumination intensity state of the module. The aggregate intensity pattern on such an SPV module will be a mixed pattern classified as non-uniform illumination (NUI) states (BRIGHT, GREY, DARK). Optimization of a SPV array under such NUI conditions is a considerable challenge. We propose an image aided dynamic reconfiguration technique based on the classification of modules after pixelating the image of the array. The nature of the BRIGHT state and DARK state coverage on the SPV module has a significant implication on output power depending on the inter-connectivity of the PV cells (module architecture) and if bypass diodes are attached to individual cells or a packet of cells. The promise of this approach is to reduce disruption of the SPV array operation. Another significant point is the ability to predict the power. It has been demonstrated that a small change in the NUI pattern can cause a significant change in the power output. While certain individual hardware blocks have been developed, ongoing activity is focused on realization of a fully online implementation.
{"title":"Image aided dynamic reconfiguration of SPV array under non uniform illumination","authors":"B. Patnaik, U. Aswani, G. Sarkar, S. Duttagupta","doi":"10.1109/PVSC.2014.6925037","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925037","url":null,"abstract":"In this paper, we studied Solar Photovoltaic (SPV) array output power as a function of dynamic illumination intensity pattern. A fine resolution pixel level analysis of 2D dynamic illumination intensity pattern is mapped to the module architecture. Images taken by high resolution cameras at regular intervals will help track the iso-insolation contours by mapping pixel pattern and estimate the illumination intensity state of the module. The aggregate intensity pattern on such an SPV module will be a mixed pattern classified as non-uniform illumination (NUI) states (BRIGHT, GREY, DARK). Optimization of a SPV array under such NUI conditions is a considerable challenge. We propose an image aided dynamic reconfiguration technique based on the classification of modules after pixelating the image of the array. The nature of the BRIGHT state and DARK state coverage on the SPV module has a significant implication on output power depending on the inter-connectivity of the PV cells (module architecture) and if bypass diodes are attached to individual cells or a packet of cells. The promise of this approach is to reduce disruption of the SPV array operation. Another significant point is the ability to predict the power. It has been demonstrated that a small change in the NUI pattern can cause a significant change in the power output. While certain individual hardware blocks have been developed, ongoing activity is focused on realization of a fully online implementation.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"138 1","pages":"0797-0802"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73113991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6924929
J. Frantz, J. Myers, R. Bekele, J. Sanghera
The performance of thin film Cu(In,Ga)Se2 (CIGS) photovoltaics is typically degraded by light lost due to the high reflectivity of the transparent top contact and by recombination resulting from carrier generation far from the junction. Traditional antireflective (AR) coatings are insufficient to address the former issue, particularly at non-normal incidence. We present a novel microstructured ZnO coating that serves two functions; it acts an AR layer with superior non-normal performance in comparison to thin film AR coatings, and it scatters a significant fraction of the incoming radiation at a large angle, resulting in absorption that is on average closer to the junction. This coating, formed via a wet etch process, results in performance comparable to that of uncoated films at normal incidence and an increase of up to 25% in the short circuit current and 18% in device efficiency at non-normal incidence.
{"title":"Microstructured ZnO coatings for improved performance in Cu(In,Ga)Se2 photovoltaic devices","authors":"J. Frantz, J. Myers, R. Bekele, J. Sanghera","doi":"10.1109/PVSC.2014.6924929","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924929","url":null,"abstract":"The performance of thin film Cu(In,Ga)Se2 (CIGS) photovoltaics is typically degraded by light lost due to the high reflectivity of the transparent top contact and by recombination resulting from carrier generation far from the junction. Traditional antireflective (AR) coatings are insufficient to address the former issue, particularly at non-normal incidence. We present a novel microstructured ZnO coating that serves two functions; it acts an AR layer with superior non-normal performance in comparison to thin film AR coatings, and it scatters a significant fraction of the incoming radiation at a large angle, resulting in absorption that is on average closer to the junction. This coating, formed via a wet etch process, results in performance comparable to that of uncoated films at normal incidence and an increase of up to 25% in the short circuit current and 18% in device efficiency at non-normal incidence.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"165 1","pages":"0350-0352"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80421871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925052
John K. Katahara, H. Hillhouse
We develop a general model for sub-bandgap absorption that includes the Urbach, Franz-Keldysh, and Thomas-Fermi models as limiting forms. Combination of this absorption scheme with a generalized Kirchhoff law for spontaneous emission of photons yields a model of photoluminescence (PL) with broad applicability to many semiconductors. This model allows for full-spectrum fitting of absolute intensity PL data and outputs: (1) the functional form of sub-bandgap absorption, (2) the energy broadening term (3) the direct bandgap, (4) the local temperature, and (5) the quasi-Fermi Level Splitting (QFLS). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 to reveal the nature of their tail states. The extracted QFLS is shown to accurately predict the open-circuit voltage of devices fabricated from the materials.
{"title":"Determining the maximum open circuit voltage from absorber photoluminescence in the presence of tail states","authors":"John K. Katahara, H. Hillhouse","doi":"10.1109/PVSC.2014.6925052","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925052","url":null,"abstract":"We develop a general model for sub-bandgap absorption that includes the Urbach, Franz-Keldysh, and Thomas-Fermi models as limiting forms. Combination of this absorption scheme with a generalized Kirchhoff law for spontaneous emission of photons yields a model of photoluminescence (PL) with broad applicability to many semiconductors. This model allows for full-spectrum fitting of absolute intensity PL data and outputs: (1) the functional form of sub-bandgap absorption, (2) the energy broadening term (3) the direct bandgap, (4) the local temperature, and (5) the quasi-Fermi Level Splitting (QFLS). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 to reveal the nature of their tail states. The extracted QFLS is shown to accurately predict the open-circuit voltage of devices fabricated from the materials.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"5 1","pages":"0866-0868"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82389995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925193
Andrew Pohl, Jay Johnson, S. Sena, R. Broderick, J. Quiroz
Data from of a highly instrumented residential feeder in Ota City, Japan was used to determine 1 second load variability for the aggregation of 50, 100, 250, and 500 homes. The load variability is categorized by binning the data into seasons, weekdays vs. weekends, and time of day to create artificial sub-15-minute variability estimates for modeling dynamic load profiles. An autoregressive, AR(1) function along with a high pass filter was used to simulate the high resolution variability. The simulated data were validated against the original 1-second measured data.
{"title":"High-resolution residential feeder load characterization and variability modelling","authors":"Andrew Pohl, Jay Johnson, S. Sena, R. Broderick, J. Quiroz","doi":"10.1109/PVSC.2014.6925193","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925193","url":null,"abstract":"Data from of a highly instrumented residential feeder in Ota City, Japan was used to determine 1 second load variability for the aggregation of 50, 100, 250, and 500 homes. The load variability is categorized by binning the data into seasons, weekdays vs. weekends, and time of day to create artificial sub-15-minute variability estimates for modeling dynamic load profiles. An autoregressive, AR(1) function along with a high pass filter was used to simulate the high resolution variability. The simulated data were validated against the original 1-second measured data.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"1471-1475"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82468453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925175
B. V. Van Aken, A. Carr
Although flash tests under standard test conditions yields lower power due to transmittance of the back sheet, bifacial modules are expected to outperform their monofacial equivalents in terms of yearly energy output in the field. Different transparent rear side materials have been compared. We compare flash tests for these bifacial modules at various incidence angles with and without a light scattering panel behind the modules. The results of an outdoor study comparing modules with transparent back sheet and modules with state-of-the-art AR coating on the front glass will be presented.
{"title":"Relating indoor and outdoor performance of bifacial modules","authors":"B. V. Van Aken, A. Carr","doi":"10.1109/PVSC.2014.6925175","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925175","url":null,"abstract":"Although flash tests under standard test conditions yields lower power due to transmittance of the back sheet, bifacial modules are expected to outperform their monofacial equivalents in terms of yearly energy output in the field. Different transparent rear side materials have been compared. We compare flash tests for these bifacial modules at various incidence angles with and without a light scattering panel behind the modules. The results of an outdoor study comparing modules with transparent back sheet and modules with state-of-the-art AR coating on the front glass will be presented.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"13 1","pages":"1381-1383"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82503777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925211
E. Sanehira, C. Luscombe, Lih Y. Lin
Non-toxic, colloidal ZnS-AgInS2 nanoparticles are synthesized and characterized for organic-inorganic hybrid photovoltaic applications. The optical properties of these particles are easily tuned by changing the chemical composition of the nanoparticle. Additionally, the photoluminescence quantum yield of 37.5% suggests this material is a promising candidate for optoelectronic devices. A comparison of the photoluminescence spectra of ZnS-AgInS2 nanoparticle and poly-3(hexylthiophene) blends to poly-3(hexylthiophene) neat indicates charge transfer between the nanoparticle and the polymer occurs in solution. Photovoltaic devices were fabricated using blends of ZnS-AgInS2 nanoparticles, poly-3(hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester, yielding an average power conversion efficiency of 2.3%.
{"title":"Non-toxic, colloidal ZnS-AgInS2 nanoparticles for organic-inorganic hybrid photovoltaics","authors":"E. Sanehira, C. Luscombe, Lih Y. Lin","doi":"10.1109/PVSC.2014.6925211","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925211","url":null,"abstract":"Non-toxic, colloidal ZnS-AgInS2 nanoparticles are synthesized and characterized for organic-inorganic hybrid photovoltaic applications. The optical properties of these particles are easily tuned by changing the chemical composition of the nanoparticle. Additionally, the photoluminescence quantum yield of 37.5% suggests this material is a promising candidate for optoelectronic devices. A comparison of the photoluminescence spectra of ZnS-AgInS2 nanoparticle and poly-3(hexylthiophene) blends to poly-3(hexylthiophene) neat indicates charge transfer between the nanoparticle and the polymer occurs in solution. Photovoltaic devices were fabricated using blends of ZnS-AgInS2 nanoparticles, poly-3(hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester, yielding an average power conversion efficiency of 2.3%.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"35 1","pages":"1547-1552"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78867896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925348
F. Fertig, K. Krauss, J. Greulich, F. Clement, D. Biro, R. Preu, S. Rein
The recently introduced BOSCO (“Both Sides Collecting and Contacted”) solar cell exhibits emitter regions on front and rear side, which are interconnected by diffused vias. This allows double-sided collection of carriers in the base and bifacial operation while supporting standard module interconnection technology. This work gives a simplified loss analysis of the first batch of large-area multi-crystalline silicon cells. A potential efficiency improvement of 0.9 %abs in front-side efficiency and 25 %rel in rear-side efficiency is expected when implementing imminent technological measures.
{"title":"The BOSCO cell concept: Bifacial operation with double-sided collection","authors":"F. Fertig, K. Krauss, J. Greulich, F. Clement, D. Biro, R. Preu, S. Rein","doi":"10.1109/PVSC.2014.6925348","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925348","url":null,"abstract":"The recently introduced BOSCO (“Both Sides Collecting and Contacted”) solar cell exhibits emitter regions on front and rear side, which are interconnected by diffused vias. This allows double-sided collection of carriers in the base and bifacial operation while supporting standard module interconnection technology. This work gives a simplified loss analysis of the first batch of large-area multi-crystalline silicon cells. A potential efficiency improvement of 0.9 %abs in front-side efficiency and 25 %rel in rear-side efficiency is expected when implementing imminent technological measures.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"38 1","pages":"2138-2143"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78963603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925509
K. Yamane, N. Urakami, H. Sekiguchi, A. Wakahara
We proposed a GaPN/GaAsPN/Si multi-junction solar cell in which lattice constants for all layers matched to Si bottom cell. Initial growth of GaP layer on Si is an important role to suppress the anti-phase domain, stacking faults, threading dislocations and melt-back etching. According to theoretical estimation considering the strain effect, band-gap energy about 1.65 eV can be obtained by GaAs0.2P0.74N0.06 which satisfies the lattice-matching condition to Si. In order to clarify the possibility of this material system, we grew GaPN and GaAsPN on the structural defect-free GaP/Si template by using rf-MBE. We also investigated the pinning state at the GaP(N)/Si heterointerface to design a low-loss tunneling junction.
{"title":"III–V-N compounds for multi-junction solar cells on Si","authors":"K. Yamane, N. Urakami, H. Sekiguchi, A. Wakahara","doi":"10.1109/PVSC.2014.6925509","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925509","url":null,"abstract":"We proposed a GaPN/GaAsPN/Si multi-junction solar cell in which lattice constants for all layers matched to Si bottom cell. Initial growth of GaP layer on Si is an important role to suppress the anti-phase domain, stacking faults, threading dislocations and melt-back etching. According to theoretical estimation considering the strain effect, band-gap energy about 1.65 eV can be obtained by GaAs0.2P0.74N0.06 which satisfies the lattice-matching condition to Si. In order to clarify the possibility of this material system, we grew GaPN and GaAsPN on the structural defect-free GaP/Si template by using rf-MBE. We also investigated the pinning state at the GaP(N)/Si heterointerface to design a low-loss tunneling junction.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"71 1","pages":"2792-2796"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78963849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-06-08DOI: 10.1109/PVSC.2014.6925483
K. Barth, Davis Hemenway
Module reliability has a direct impact on the levalized cost of energy, and reliability issues for thin film PV have been consistently reported. Direct Solar LLC is developing a new module architecture for thin film PV that has robustness to moisture and excellent adhesion under UV light exposure. Process cycle times for each manufacturing step is under 1 minute using low capital cost, small footprint tooling. The patent pending architecture utilizes a specialized two part edge seal. The modules are fabricated without lamination, vacuum pressing or module heating. An initial version of this design has passed IEC 61646 and UL 1703 certification tests and 4500+hrs. of the rigorous 85 C/85% relative humidity “damp heat test”.
组件的可靠性直接影响能源的平化成本，而薄膜光伏的可靠性问题一直被报道。Direct Solar LLC正在开发一种新的薄膜光伏组件架构，该组件具有抗湿性和紫外线照射下的优异附着力。每个制造步骤的工艺周期时间在1分钟以下，使用低资本成本，小足迹的工具。正在申请专利的架构采用专门的两部分边缘密封。该模块的制造无需层压，真空压制或模块加热。该设计的初始版本已通过IEC 61646和UL 1703认证测试和4500+小时。严格的85℃/85%相对湿度“湿热试验”。
{"title":"Progress toward developing a novel module architecture for increased reliability and reduced costs","authors":"K. Barth, Davis Hemenway","doi":"10.1109/PVSC.2014.6925483","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925483","url":null,"abstract":"Module reliability has a direct impact on the levalized cost of energy, and reliability issues for thin film PV have been consistently reported. Direct Solar LLC is developing a new module architecture for thin film PV that has robustness to moisture and excellent adhesion under UV light exposure. Process cycle times for each manufacturing step is under 1 minute using low capital cost, small footprint tooling. The patent pending architecture utilizes a specialized two part edge seal. The modules are fabricated without lamination, vacuum pressing or module heating. An initial version of this design has passed IEC 61646 and UL 1703 certification tests and 4500+hrs. of the rigorous 85 C/85% relative humidity “damp heat test”.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0166-0169"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78990781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：