Pub Date : 2018-06-01DOI: 10.1109/mwsym.2018.8439611
{"title":"The End of Indexes","authors":"","doi":"10.1109/mwsym.2018.8439611","DOIUrl":"https://doi.org/10.1109/mwsym.2018.8439611","url":null,"abstract":"","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"94 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84308183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439598
Aleksandr Krivovitca, U. Shah, O. Glubokov, J. Oberhammer
In this paper, we present for the first time on, to the best of our knowledge, the first silicon-core micromachined sub-strate-integrated waveguide (SIW) in the 220–325 GHz frequency range. In contrast to the fabrication methods used for conventional SIW known from substantially lower frequencies, micromachining allows for a full-height waveguide and near-ideal and arbitrarily shaped sidewalls. The silicon dielectric core allows for downscaling the waveguide and components by a factor of 3.4 as compared to an air-filled waveguide. At 330 GHz, the measured waveguide insertion loss is as low as 0.43 dB/mm (0.14 dB/λg, normalized to the guided wavelength). Devices were manufactured using a two-mask micromachining process. Furthermore, a low-loss ultra-wideband coplanar-waveguide (CPW) transition was successfully implemented, which comprises the very first CPW-to-SIW transitions in this frequency range. The measured transition performance is better than 0.5 dB insertion loss (average of 0.43 dB in the band above 15% above the waveguide-cutoff frequency), which is lower than previously reported CPW-to-SIW transitions even at 3 times lower frequencies, and the return loss is better than 14 dB for 75% of the waveguide band.
{"title":"Micromachined Silicon-core Substrate-integrated Waveguides with Co-planarprobe Transitions at 220–330 GHz","authors":"Aleksandr Krivovitca, U. Shah, O. Glubokov, J. Oberhammer","doi":"10.1109/MWSYM.2018.8439598","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439598","url":null,"abstract":"In this paper, we present for the first time on, to the best of our knowledge, the first silicon-core micromachined sub-strate-integrated waveguide (SIW) in the 220–325 GHz frequency range. In contrast to the fabrication methods used for conventional SIW known from substantially lower frequencies, micromachining allows for a full-height waveguide and near-ideal and arbitrarily shaped sidewalls. The silicon dielectric core allows for downscaling the waveguide and components by a factor of 3.4 as compared to an air-filled waveguide. At 330 GHz, the measured waveguide insertion loss is as low as 0.43 dB/mm (0.14 dB/λg, normalized to the guided wavelength). Devices were manufactured using a two-mask micromachining process. Furthermore, a low-loss ultra-wideband coplanar-waveguide (CPW) transition was successfully implemented, which comprises the very first CPW-to-SIW transitions in this frequency range. The measured transition performance is better than 0.5 dB insertion loss (average of 0.43 dB in the band above 15% above the waveguide-cutoff frequency), which is lower than previously reported CPW-to-SIW transitions even at 3 times lower frequencies, and the return loss is better than 14 dB for 75% of the waveguide band.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"158 1","pages":"190-193"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88285205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439148
Hee Sung Lee, Kwang Kyu Hwang, D. Kang, S. Cho, C. Byeon, C. Park
A power efficient 20 GHz PLL for 60 GHz transceiver is presented in this paper. The proposed PLL consists of low phase noise voltage controlled oscillator, low power consumption divider chain, phase frequency detector, charge pump, and loop filter. The PLL covers frequency from 19.43 GHz to 20.62 GHz with 2-bit switched capacitor banks. Implemented in 65 nm CMOS technology, the fully integrated PLL occupies an area of 1.3mm2. A phase noise of PLL is −102.05 dBc/Hz at 1 MHz offset frequency and a figure of merit of −174.35 dBc/Hz with 23.6 mW power consumnption.
{"title":"A Low-Phase-Noise 20 GHz Phase-Locked Loop with Parasitic Capacitance Reduction Technique for V-band Applications","authors":"Hee Sung Lee, Kwang Kyu Hwang, D. Kang, S. Cho, C. Byeon, C. Park","doi":"10.1109/MWSYM.2018.8439148","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439148","url":null,"abstract":"A power efficient 20 GHz PLL for 60 GHz transceiver is presented in this paper. The proposed PLL consists of low phase noise voltage controlled oscillator, low power consumption divider chain, phase frequency detector, charge pump, and loop filter. The PLL covers frequency from 19.43 GHz to 20.62 GHz with 2-bit switched capacitor banks. Implemented in 65 nm CMOS technology, the fully integrated PLL occupies an area of 1.3mm2. A phase noise of PLL is −102.05 dBc/Hz at 1 MHz offset frequency and a figure of merit of −174.35 dBc/Hz with 23.6 mW power consumnption.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"9 1","pages":"1431-1433"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88368474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439419
A. Cordon, I. Arregui, I. Arnedo, F. Tcberio, C. Arnold, M. Laso, J. Lorente
An innovative and industrially relevant design technique to improve the integration of satellite output multiplexers (OMUXes) is proposed. The manifold dimensions of classical manifold OMUXes are typically obtained to accomplish the frequency specifications regardless of any constraints on manifold dimensions. However, it may be desirable to achieve a certain fixed inter-channel spacing e.g. in order to easily accommodate a fixed mounting point pattern or to obtain a more generic mechanical design approach. A design procedure is proposed in this paper to replace the uniform waveguides of a pre-designed OMUX by stepped waveguides sections, making it viable to adjust the footprint to the required dimensions without compromising the frequency response and avoiding any filter readjustment. A 3-channel OMUX prototype has been designed and simulated (both with CST MWS and FEST3D for comparison purposes) as an example to validate the feasibility of the proposed technique.
{"title":"Design Technique for Integration of Manifold Multiplexers Considering Constraints on Inter-Channel Spacings","authors":"A. Cordon, I. Arregui, I. Arnedo, F. Tcberio, C. Arnold, M. Laso, J. Lorente","doi":"10.1109/MWSYM.2018.8439419","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439419","url":null,"abstract":"An innovative and industrially relevant design technique to improve the integration of satellite output multiplexers (OMUXes) is proposed. The manifold dimensions of classical manifold OMUXes are typically obtained to accomplish the frequency specifications regardless of any constraints on manifold dimensions. However, it may be desirable to achieve a certain fixed inter-channel spacing e.g. in order to easily accommodate a fixed mounting point pattern or to obtain a more generic mechanical design approach. A design procedure is proposed in this paper to replace the uniform waveguides of a pre-designed OMUX by stepped waveguides sections, making it viable to adjust the footprint to the required dimensions without compromising the frequency response and avoiding any filter readjustment. A 3-channel OMUX prototype has been designed and simulated (both with CST MWS and FEST3D for comparison purposes) as an example to validate the feasibility of the proposed technique.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"136 1","pages":"1087-1090"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86574076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439533
H. Ng, R. Feger, D. Kissinger
This paper describes a scalable 120-GHz multichannel radar system-on-chip in a SiGe BiCMOS technology. The chip includes a 4-channel transceiver (TRX) and folded-dipole antennas with a high radiation efficiency due to the use of the selective localized-backside etching technique. The TRX is equipped with vector modulators as well as demodulators and can be used for analog as well as digital beamforming. Several of these multi-channel TRXs can be cascaded to form a daisy chain and used to build phased array as well as MIMO radar applications. A frequency-division multiplexing MIMO radar system with single-sideband delta-sigma modulation was created using the implemented chip to show its applicability.
{"title":"Scalable mm-Wave 4-Channel Radar SoC with Vector Modulators and Demodulators for MIMO and Phased Array Applications","authors":"H. Ng, R. Feger, D. Kissinger","doi":"10.1109/MWSYM.2018.8439533","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439533","url":null,"abstract":"This paper describes a scalable 120-GHz multichannel radar system-on-chip in a SiGe BiCMOS technology. The chip includes a 4-channel transceiver (TRX) and folded-dipole antennas with a high radiation efficiency due to the use of the selective localized-backside etching technique. The TRX is equipped with vector modulators as well as demodulators and can be used for analog as well as digital beamforming. Several of these multi-channel TRXs can be cascaded to form a daisy chain and used to build phased array as well as MIMO radar applications. A frequency-division multiplexing MIMO radar system with single-sideband delta-sigma modulation was created using the implemented chip to show its applicability.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"53 1","pages":"1472-1475"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87171534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439526
Michael Hollenbeck, R. Smith, Clinton Cathey, Janos Opra
Additive manufacturing (aka 3D printing) in metals allows for the design and fabrication of integrated antenna structures that reduce part count and improve performance. This paper investigates the performance of an integrated feed design for a parabolic reflector that supports both left-hand and right-hand circular polarizations with a separate OMT, manufactured using additive manufacturing in AlSil0Mg with a Powder Bed Fusion process. The subreflector, subreflector support, feed horn, polarizer, and circular waveguide input are all printed as a single structure that eliminates typical blockage from subreflector support structures and allows for ease of assembly. Measured patterns show high levels of pattern symmetry in Azimuth and Elevation, and two separate printed antenna and OMT pairs show good precision without the need for any secondary tuning steps during assembly.
{"title":"X-band Integrated Printed Antenna Measurement","authors":"Michael Hollenbeck, R. Smith, Clinton Cathey, Janos Opra","doi":"10.1109/MWSYM.2018.8439526","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439526","url":null,"abstract":"Additive manufacturing (aka 3D printing) in metals allows for the design and fabrication of integrated antenna structures that reduce part count and improve performance. This paper investigates the performance of an integrated feed design for a parabolic reflector that supports both left-hand and right-hand circular polarizations with a separate OMT, manufactured using additive manufacturing in AlSil0Mg with a Powder Bed Fusion process. The subreflector, subreflector support, feed horn, polarizer, and circular waveguide input are all printed as a single structure that eliminates typical blockage from subreflector support structures and allows for ease of assembly. Measured patterns show high levels of pattern symmetry in Azimuth and Elevation, and two separate printed antenna and OMT pairs show good precision without the need for any secondary tuning steps during assembly.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"41 1","pages":"149-151"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85428416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439269
Peigen Zhou, Jixin Chen, Huanbo Li, Debin Hou, P. Yan, Chao Yu, W. Hong
A compact E-band frequency tripler with broadband performance is implemented in a $0.13 mu mathrm{m}$ SiGe BiCMOS technology. A high pass filter and transformers impedance matching were used in a fully differential cascode topology to improve the harmonic suppression and broadband performance. Besides, a RF virtual ground capacitor in parallel with base of the CB transistor was proposed in the buffer stage that can enhance the output power by more than 1.7 dB. Followed by a buffer amplifier, the proposed tripler exhibits a measured 3-dB bandwidth ranging from 69 to 86 GHz with a peak output power of 9.9 dBm at 78 GHz. The suppression of fundamental and second-harmonic frequency is more than 35 and 33 dBc, respectively. The tripler can work properly between industrial temperature range (-40°C to 125°C). The tripler with buffer amplifier occupies only 158 mW from a 3.3 V supply. To the best of our knowledge, the proposed tripler demonstrates the highest output power and DC-to-RF efficiency, largest harmonic suppression that covers industrial temperature range compared with other silicon based E-band triplers.
采用$0.13 mu math {m}$ SiGe BiCMOS技术实现了具有宽带性能的紧凑型e波段三倍频器。在全差分级联码拓扑中采用高通滤波器和变压器阻抗匹配来提高谐波抑制和宽带性能。此外，在缓冲级设计了与CB晶体管基极并联的射频虚拟地电容器，可使输出功率提高1.7 dB以上。然后是一个缓冲放大器，所提出的三倍器显示测量的3db带宽范围为69至86 GHz, 78 GHz时的峰值输出功率为9.9 dBm。对基频和二次谐波的抑制分别大于35dbc和33dbc。在工业温度范围(-40°C ~ 125°C)内正常工作。带缓冲放大器的三倍器从3.3 V电源中仅占用158 mW。据我们所知，与其他硅基e波段三倍器相比，所提出的三倍器具有最高的输出功率和dc - rf效率，最大的谐波抑制，覆盖工业温度范围。
{"title":"A High-Efficiency E-band SiGe HBT Frequency Tripler with Broadband Performance","authors":"Peigen Zhou, Jixin Chen, Huanbo Li, Debin Hou, P. Yan, Chao Yu, W. Hong","doi":"10.1109/MWSYM.2018.8439269","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439269","url":null,"abstract":"A compact E-band frequency tripler with broadband performance is implemented in a $0.13 mu mathrm{m}$ SiGe BiCMOS technology. A high pass filter and transformers impedance matching were used in a fully differential cascode topology to improve the harmonic suppression and broadband performance. Besides, a RF virtual ground capacitor in parallel with base of the CB transistor was proposed in the buffer stage that can enhance the output power by more than 1.7 dB. Followed by a buffer amplifier, the proposed tripler exhibits a measured 3-dB bandwidth ranging from 69 to 86 GHz with a peak output power of 9.9 dBm at 78 GHz. The suppression of fundamental and second-harmonic frequency is more than 35 and 33 dBc, respectively. The tripler can work properly between industrial temperature range (-40°C to 125°C). The tripler with buffer amplifier occupies only 158 mW from a 3.3 V supply. To the best of our knowledge, the proposed tripler demonstrates the highest output power and DC-to-RF efficiency, largest harmonic suppression that covers industrial temperature range compared with other silicon based E-band triplers.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"19 1","pages":"690-693"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80250492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439325
Yang Yang, He Zhu, Xi Zhu, Q. Xue
This paper introduces an on-chip third-order bandpass filter (BPF) for millimeter-wave (mm-wave) applications. The proposed BPF is composed of three identical broadside-coupled meander-line resonators (BCMLR) which are jointly connected by three MIM capacitors through aT-shape network. The MIM capacitors are used as J-inverters for the implementation of the third-order BPF in order to achieve the desired multiple transmission poles and zeros across the passband and stopband, correspondingly. To fully understand the operational mechanism of the proposed high-order structure, the resonator and the proposed BPF are analyzed using an LC- equivalent circuit model for further investigation of the distribution of the transmission poles and zeros in terms of the metal inductance and MIM capacitance. To prove the concept, the proposed BPF prototype is implemented in a commercial 0.13-l.lm SiGe (Bi)-CMOS process. According to the results obtained from on-wafer measurement, three transmission poles and three transmission zeros are clearly observed. Noticeably, the proposed BPF exhibits excellent performances including a flat in-band response (less than 1 dB attenuation) from 26.7 GHz to 44.3 GHz with a measured insertion loss of 3.1 dB at the center frequency of 35.5 GHz and stopband attenuation up to 35 dB at 59 GHz. The chip size is 0.016 mm2(0.066 × 0.236 mm-), excluding the GSG pads.
{"title":"Integrated Third-Order Millimeter-Wave On-Chip Bandpass Filter using 0.13-μm SiGe Bi-CMOS Technology","authors":"Yang Yang, He Zhu, Xi Zhu, Q. Xue","doi":"10.1109/MWSYM.2018.8439325","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439325","url":null,"abstract":"This paper introduces an on-chip third-order bandpass filter (BPF) for millimeter-wave (mm-wave) applications. The proposed BPF is composed of three identical broadside-coupled meander-line resonators (BCMLR) which are jointly connected by three MIM capacitors through aT-shape network. The MIM capacitors are used as J-inverters for the implementation of the third-order BPF in order to achieve the desired multiple transmission poles and zeros across the passband and stopband, correspondingly. To fully understand the operational mechanism of the proposed high-order structure, the resonator and the proposed BPF are analyzed using an LC- equivalent circuit model for further investigation of the distribution of the transmission poles and zeros in terms of the metal inductance and MIM capacitance. To prove the concept, the proposed BPF prototype is implemented in a commercial 0.13-l.lm SiGe (Bi)-CMOS process. According to the results obtained from on-wafer measurement, three transmission poles and three transmission zeros are clearly observed. Noticeably, the proposed BPF exhibits excellent performances including a flat in-band response (less than 1 dB attenuation) from 26.7 GHz to 44.3 GHz with a measured insertion loss of 3.1 dB at the center frequency of 35.5 GHz and stopband attenuation up to 35 dB at 59 GHz. The chip size is 0.016 mm2(0.066 × 0.236 mm-), excluding the GSG pads.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"10 1","pages":"1095-1098"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81532724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439341
A. Tang, Y. Kim, G. Virbila, M. Chang
This paper presents an AFSK-OFDM (amplitude frequency shift keying-orthogonal frequency division multiplexing) based backscatter transmitter for Internet-of-Things (IoT) applications. The transmitter uses an array of 4 low-power direct digital frequency synthesizers (DDFSs) and DACs to transmit data using both frequency and amplitude symbols on 4 different OFDM subcarriers. The backscatter modulator is demonstrated within a 5.8 GHz wireless link using an 8-symbol OFDM library at a range of 2.7m and shown to consume 1.77 mW when operated at a symbol rate of 4MS/s (corresponds to 12 Mb/$s$). The modulator chip occupies 0.45mm2of silicon area.
{"title":"A 5.8 GHz 1.77mW AFSK-OFDM CMOS Backscatter Transmitter for Low Power IoT Applications","authors":"A. Tang, Y. Kim, G. Virbila, M. Chang","doi":"10.1109/MWSYM.2018.8439341","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439341","url":null,"abstract":"This paper presents an AFSK-OFDM (amplitude frequency shift keying-orthogonal frequency division multiplexing) based backscatter transmitter for Internet-of-Things (IoT) applications. The transmitter uses an array of 4 low-power direct digital frequency synthesizers (DDFSs) and DACs to transmit data using both frequency and amplitude symbols on 4 different OFDM subcarriers. The backscatter modulator is demonstrated within a 5.8 GHz wireless link using an 8-symbol OFDM library at a range of 2.7m and shown to consume 1.77 mW when operated at a symbol rate of 4MS/s (corresponds to 12 Mb/$s$). The modulator chip occupies 0.45mm2of silicon area.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"1 1","pages":"259-261"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84141027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439665
Jing Liang, Z. Chen, Jinyan Li, Yiqiang Yu, Junfeng Wang
Electromagnetic time-reversal (TR) method has been proposed many years ago; however, its developments and applications do not have much progress due to limited advances on relevant theories and expansions to two and three-dimensional scenarios. In this paper, we address the issue by first developing the time-reversal theory with digital signal processing techniques and extending the time-reversal method to multiple source reconstructions with different steps. Then we propose a method to reconstruct spatially clustered sources; it leads to the possibility of reconstructions of line, surface and volume sources for practical applications. Numerical example of a line source is tested for verification of the proposed method.
{"title":"Towards the Source Reconstruction with a Time-Reversal Method for Practical Applications","authors":"Jing Liang, Z. Chen, Jinyan Li, Yiqiang Yu, Junfeng Wang","doi":"10.1109/MWSYM.2018.8439665","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439665","url":null,"abstract":"Electromagnetic time-reversal (TR) method has been proposed many years ago; however, its developments and applications do not have much progress due to limited advances on relevant theories and expansions to two and three-dimensional scenarios. In this paper, we address the issue by first developing the time-reversal theory with digital signal processing techniques and extending the time-reversal method to multiple source reconstructions with different steps. Then we propose a method to reconstruct spatially clustered sources; it leads to the possibility of reconstructions of line, surface and volume sources for practical applications. Numerical example of a line source is tested for verification of the proposed method.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"10 1","pages":"1010-1012"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84375783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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