Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439530
Z. V. Missen, A. Semnani, D. Peroulis
A novel circuit design for implementing high-power, wideband limiters with inexpensive, off-the-shelf components is introduced. A microstrip line is periodically loaded with shunt attached gas discharge tubes, self-contained plasma cell devices. Cost considerations are discussed in comparison to other high-power technologies. A proof-of-concept prototype is fabricated to demonstrate the limiting effects of the technology. Simulated and measured results from the test article are presented; 50-W CW power handling from 3 – 6 GHz with greater than 15 dB of limiting isolation and insertion loss less than 1.5 dB are observed. Extensions to diversify the feature set of this design are considered.
{"title":"High-Power Wideband Low-Cost Limiters Using Cold Plasma","authors":"Z. V. Missen, A. Semnani, D. Peroulis","doi":"10.1109/MWSYM.2018.8439530","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439530","url":null,"abstract":"A novel circuit design for implementing high-power, wideband limiters with inexpensive, off-the-shelf components is introduced. A microstrip line is periodically loaded with shunt attached gas discharge tubes, self-contained plasma cell devices. Cost considerations are discussed in comparison to other high-power technologies. A proof-of-concept prototype is fabricated to demonstrate the limiting effects of the technology. Simulated and measured results from the test article are presented; 50-W CW power handling from 3 – 6 GHz with greater than 15 dB of limiting isolation and insertion loss less than 1.5 dB are observed. Extensions to diversify the feature set of this design are considered.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"25 1","pages":"71-74"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90471219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439190
N. Estakhri, N. Engheta, R. Kastner
Self-dual structures, whose electric and magnetic parameters can be interchanged without causing any change to the structure, are shown to be inherently matched to free space. With proper design, in such structures, the normally incident energy is funneled through arbitrarily thin air gaps that support TEM or quasi- TEM modes. A finite-length self-dual waveguide, as suggested herein, is inherently matched at both input and output interfaces, even though the field within the waveguide may be substantially complex and have its own characteristic polarization. This structure looks promising for several applications, as detailed below.
{"title":"Wideband, Periodically Arranged Self-Dual Subwavelength Waveguides","authors":"N. Estakhri, N. Engheta, R. Kastner","doi":"10.1109/MWSYM.2018.8439190","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439190","url":null,"abstract":"Self-dual structures, whose electric and magnetic parameters can be interchanged without causing any change to the structure, are shown to be inherently matched to free space. With proper design, in such structures, the normally incident energy is funneled through arbitrarily thin air gaps that support TEM or quasi- TEM modes. A finite-length self-dual waveguide, as suggested herein, is inherently matched at both input and output interfaces, even though the field within the waveguide may be substantially complex and have its own characteristic polarization. This structure looks promising for several applications, as detailed below.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"17 1","pages":"334-336"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75063027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439581
Thoalfukar Husseini, Azam Al-Rawachy, J. Benedikt, James Bel, P. Tasker
The CAD design of Power Amplifiers requires an accurate non-linear modelling solution. Generally, this is provided by state function (1-V, Q-V) model formulations. These typically require time consuming measurement procedures for model extraction and verification. Look-up table a-wave based behavioral models, i.e. the Cardiff Model, extracted directly from measurement data provide for a robust alternative, addressing both simulation accuracy and model extraction time. The challenge is identifying, in a time efficient manner, the appropriate load-pull impedance space, that ensures the model coefficients are accurately extracted. This paper outlines an automated approach addressing this requirement, that exploits the novel features of emerging high-speed load-pull measurement systems to identify and then measure directly load-pull power contours. The automated approach reduces significantly the number of required measurements, hence the measurement time, compared with the traditional approach while also ensuring an accurate Cardiff Model is extracted. The approach is demonstrated on a 10W packaged Cree HFET.
{"title":"Automating the Accurate Extraction and Verification of the Cardiff Model via the Direct Measurement of Load-Pull Power Contours","authors":"Thoalfukar Husseini, Azam Al-Rawachy, J. Benedikt, James Bel, P. Tasker","doi":"10.1109/MWSYM.2018.8439581","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439581","url":null,"abstract":"The CAD design of Power Amplifiers requires an accurate non-linear modelling solution. Generally, this is provided by state function (1-V, Q-V) model formulations. These typically require time consuming measurement procedures for model extraction and verification. Look-up table a-wave based behavioral models, i.e. the Cardiff Model, extracted directly from measurement data provide for a robust alternative, addressing both simulation accuracy and model extraction time. The challenge is identifying, in a time efficient manner, the appropriate load-pull impedance space, that ensures the model coefficients are accurately extracted. This paper outlines an automated approach addressing this requirement, that exploits the novel features of emerging high-speed load-pull measurement systems to identify and then measure directly load-pull power contours. The automated approach reduces significantly the number of required measurements, hence the measurement time, compared with the traditional approach while also ensuring an accurate Cardiff Model is extracted. The approach is demonstrated on a 10W packaged Cree HFET.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"175 1","pages":"544-547"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77950084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439834
E. Menargues, S. Capdevila, T. Debogovic, A. Dimitriadis, J. Mosig, A. Skrivervik, E. de Rijk
A compact and broadband orthomode transducer (OMT) with two dual linearly polarized ports is reported here for the first time. The component is based on a combination of two ridged Boifot junctions through a series of power dividers that act as an embedded first level of the beamforming network. The design technique of the new OMT is discussed in the paper through an example that operates at Ku-band (10.7 GHz to 14.5 GHz) suitable for Satellite-on-the-Move (SOTM) user terminals. Measurement results of an additive manufactured (AM) monolithic prototype are presented, showing a good agreement with the simulation results.
{"title":"Compact Orthomode Transducer with Broadband Beamforming Capability","authors":"E. Menargues, S. Capdevila, T. Debogovic, A. Dimitriadis, J. Mosig, A. Skrivervik, E. de Rijk","doi":"10.1109/MWSYM.2018.8439834","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439834","url":null,"abstract":"A compact and broadband orthomode transducer (OMT) with two dual linearly polarized ports is reported here for the first time. The component is based on a combination of two ridged Boifot junctions through a series of power dividers that act as an embedded first level of the beamforming network. The design technique of the new OMT is discussed in the paper through an example that operates at Ku-band (10.7 GHz to 14.5 GHz) suitable for Satellite-on-the-Move (SOTM) user terminals. Measurement results of an additive manufactured (AM) monolithic prototype are presented, showing a good agreement with the simulation results.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"33 1","pages":"152-155"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78334731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439367
S. Kawasaki, S. Yoshida, T. Nakaoka, K. Nishikawa
In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained
本文介绍了由不同类型的半导体制成的新型集成电路，如混合半导体集成电路(HySIC)。采用0.18μm Si CMOS工艺和芯片-晶圆键合技术，设计了工作频率为5.8 GHz的c波段紧凑型全硅整流器和HySIC射频整流器。由此，射频-直流转换效率分别约为25%和10%。此外，结合在硅衬底上实现的整流器，制作了宽功率范围的HySIC射频能量采集器，并成功获得了基本数据
{"title":"The C-Band HySIC RF Energy Harvester Based on the Space Information, Communication and Energy Harvesting Technology","authors":"S. Kawasaki, S. Yoshida, T. Nakaoka, K. Nishikawa","doi":"10.1109/MWSYM.2018.8439367","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439367","url":null,"abstract":"In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"12 1","pages":"1265-1268"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75133252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439623
Yifei Li, L. Xu, Peter Hcrczfeld, Jeffrey Rodriguez
A high performance RF Receiver frontend desires a large dynamic range to pick up weak signals from background noise and interference. However, inherent nonlinear distortions of electronic amplifiers and mixers often bottleneck the receiver's dynamic range performance. In this paper, we present a solution to the RF receiver frontend that is based on integrated microwave photonics. It contains a chip-level integrated high dynamic range RF photonic link with an optical-domain frequency down-con-verter. The design and measurements of the integrated circuit are discussed. An approach of extending the IC chip to a fiber-optic fed RF receiver frontend is also presented.
{"title":"Integrated Microwave Photonics for High Performance RF Receiver Frontends","authors":"Yifei Li, L. Xu, Peter Hcrczfeld, Jeffrey Rodriguez","doi":"10.1109/MWSYM.2018.8439623","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439623","url":null,"abstract":"A high performance RF Receiver frontend desires a large dynamic range to pick up weak signals from background noise and interference. However, inherent nonlinear distortions of electronic amplifiers and mixers often bottleneck the receiver's dynamic range performance. In this paper, we present a solution to the RF receiver frontend that is based on integrated microwave photonics. It contains a chip-level integrated high dynamic range RF photonic link with an optical-domain frequency down-con-verter. The design and measurements of the integrated circuit are discussed. An approach of extending the IC chip to a fiber-optic fed RF receiver frontend is also presented.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"1 1","pages":"1320-1322"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74365077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439362
Fatemeh Akbar, A. Mortazawi
This paper presents a new analog vector sum phase shifter where the phases of the orthogonal vectors $I$ and $Q$ as well as their amplitude ratio are varied simultaneously to control the vector sum phase. As a proof of concept, a phase shifter with a single-ended input and differential outputs is fabricated at K-band in 130-nm CMOS process. All the tasks of vector (I and Q) generation, vectors' amplitude and phase variation, and vector summation are performed in a single block (phase shifter core) to reduce power consumption and chip real estate. The phase shifter provides 300° of continuous phase tuning with an average insertion loss of 6.7 dB at 23 GHz and total power consumption of 18.5 mW while occupying an on-chip area of $mathbf{0.64times0.68 mm^{2}}$ (excluding the pads). The phase shifter core consumes only 7.8 mW, and its corresponding area is $mathbf{0.15times 0.3 mm^{2}}$.
{"title":"A New Integrated K-Band Analog Vector Sum Phase Shifter","authors":"Fatemeh Akbar, A. Mortazawi","doi":"10.1109/MWSYM.2018.8439362","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439362","url":null,"abstract":"This paper presents a new analog vector sum phase shifter where the phases of the orthogonal vectors $I$ and $Q$ as well as their amplitude ratio are varied simultaneously to control the vector sum phase. As a proof of concept, a phase shifter with a single-ended input and differential outputs is fabricated at K-band in 130-nm CMOS process. All the tasks of vector (I and Q) generation, vectors' amplitude and phase variation, and vector summation are performed in a single block (phase shifter core) to reduce power consumption and chip real estate. The phase shifter provides 300° of continuous phase tuning with an average insertion loss of 6.7 dB at 23 GHz and total power consumption of 18.5 mW while occupying an on-chip area of $mathbf{0.64times0.68 mm^{2}}$ (excluding the pads). The phase shifter core consumes only 7.8 mW, and its corresponding area is $mathbf{0.15times 0.3 mm^{2}}$.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"2016 1","pages":"1441-1444"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73329915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439201
Yonghao Jia, Yuehang Xu, Yong-xin Guo
In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/ GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.
本文首次在AlGaN/ GaN hemt中，将缓冲相关电荷分接效应建模为阈值电压偏移。阈值电压的位移由一个阈值电压模型来描述，该模型不包含任何拟合参数，并且是连续可微的。阈值电压模型可以很容易地实现为一个紧凑的大信号模型。具有捕获效应的大信号模型可以准确地预测动态I-V行为、高达14 GHz的s参数和大信号输出特性。
{"title":"Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in AlGaN/GaN HEMTs","authors":"Yonghao Jia, Yuehang Xu, Yong-xin Guo","doi":"10.1109/MWSYM.2018.8439201","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439201","url":null,"abstract":"In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/ GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"11 1","pages":"724-727"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73693927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439701
M. Duffy, E. Berry, G. Lasser, Z. Popovic
In this paper, a single-stage octave bandwidth power amplifier from 2–4 GHz with greater than 10 W output power and drain efficiency ranging from 55–70 % is presented. Input and output networks are synthesized to match the fundamental, 2nd and 3rd harmonics for efficiency, based on load-pull simulations. The amplifier performance is characterized over the entire band for a 20-MHz LTE signal with a PAPR of 8 dB, demonstrating an average efficiency greater than 25 % with a normalized mean square error (NSMR) below −28 dB. Two 20-MHz signals are then simultaneously amplified with a spacing that varies from 200 MHz to 1 GHz, with resulting average efficiencies over 28%.
{"title":"An Efficient Linearized Octave-Bandwidth Power Amplifier for Carrier Aggregation","authors":"M. Duffy, E. Berry, G. Lasser, Z. Popovic","doi":"10.1109/MWSYM.2018.8439701","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439701","url":null,"abstract":"In this paper, a single-stage octave bandwidth power amplifier from 2–4 GHz with greater than 10 W output power and drain efficiency ranging from 55–70 % is presented. Input and output networks are synthesized to match the fundamental, 2nd and 3rd harmonics for efficiency, based on load-pull simulations. The amplifier performance is characterized over the entire band for a 20-MHz LTE signal with a PAPR of 8 dB, demonstrating an average efficiency greater than 25 % with a normalized mean square error (NSMR) below −28 dB. Two 20-MHz signals are then simultaneously amplified with a spacing that varies from 200 MHz to 1 GHz, with resulting average efficiencies over 28%.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"13 1","pages":"473-476"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84682680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439422
V. A. Coutinho, V. Ariyarathna, D. Coelho, R. J. Cintral, A. Madanayake
A low-complexity receive-mode 8-beam multi-beamformer in the digital domain has been realized at 2.4 GHz using an 8-element IQ receiver array. The proposed beamformer is based on a new low-complexity approximation for the 8-point DFT, which is used to perform the spatial DFT operation to achieve multi-beams. The presented DFT approximation is multiplierless and thus achieves low-complexity hardware realizations. The ROACH-2 FPGA platform was used for the analog-to-digital conversion and performing the digital computation. Beams resulting from the approximate transform were measured using digital circuits and were compared to the corresponding beam patters arising from the exact DFT implementation (using 8-bit twiddle factors). The measured beam patterns corresponding to the approximate transform closely followed the pattern of the measured beams resulting from the exact DFT implementation and from the Matlab simulation. The proposed approximate transform based method achieves a performance similar to the exact DFT-based beamformer at a hardware reduction of ~150% at a cost of up to 1.2 dB deviation in the highest side lobe with respect to the measured exact DFT beams.
{"title":"An 8-Beam 2.4 GHz Digital Array Receiver Based on a Fast Multiplierless Spatial DFT Approximation","authors":"V. A. Coutinho, V. Ariyarathna, D. Coelho, R. J. Cintral, A. Madanayake","doi":"10.1109/MWSYM.2018.8439422","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439422","url":null,"abstract":"A low-complexity receive-mode 8-beam multi-beamformer in the digital domain has been realized at 2.4 GHz using an 8-element IQ receiver array. The proposed beamformer is based on a new low-complexity approximation for the 8-point DFT, which is used to perform the spatial DFT operation to achieve multi-beams. The presented DFT approximation is multiplierless and thus achieves low-complexity hardware realizations. The ROACH-2 FPGA platform was used for the analog-to-digital conversion and performing the digital computation. Beams resulting from the approximate transform were measured using digital circuits and were compared to the corresponding beam patters arising from the exact DFT implementation (using 8-bit twiddle factors). The measured beam patterns corresponding to the approximate transform closely followed the pattern of the measured beams resulting from the exact DFT implementation and from the Matlab simulation. The proposed approximate transform based method achieves a performance similar to the exact DFT-based beamformer at a hardware reduction of ~150% at a cost of up to 1.2 dB deviation in the highest side lobe with respect to the measured exact DFT beams.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"32 1","pages":"1538-1541"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79403549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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