Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439183
J. Mata-Contreras, C. Herrojo, F. Martín
This paper presents electromagnetic rotary encoders (used for angular velocity sensing) implemented in microstrip technology for the first time. The stator is a SRR-loaded microstrip line in bandpass configuration fed by a harmonic (single tone) signal. The rotor is a disc of dielectric material with a circular chain of SRRs., identical to the one of the stator, etched at the edge. By positioning the stator and the rotor with the SRR of the stator at short distance and face-to-face to the rotor chain, rotor motion modulates the amplitude of the feeding (carrier) signal at the output port of the line. This is due to the electromagnetic coupling between the SRR of the line and the SRRs of the chain, which in turn modulates the transmission coefficient of the line (stator) at the frequency of the carrier signal. Consequently, the envelope of the output (AM modulated) signal, which can be obtained by means of an envelope detector, exhibits pulses, and from the time distance between adjacent pulses, the angular velocity can be inferred. The main advantages of the proposed system, as compared to previous rotary encoders based on coplanar waveguide (CPW) technology, are backside isolation, necessary in certain applications, and, most important, major robustness against variations in the stator-to-rotor distance (air gap), caused by misalignments, rotor precession or rotor vibration.
{"title":"Electromagnetic Rotary Encoders based on Split Ring Resonators (SRR) Loaded Microstrip Lines","authors":"J. Mata-Contreras, C. Herrojo, F. Martín","doi":"10.1109/MWSYM.2018.8439183","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439183","url":null,"abstract":"This paper presents electromagnetic rotary encoders (used for angular velocity sensing) implemented in microstrip technology for the first time. The stator is a SRR-loaded microstrip line in bandpass configuration fed by a harmonic (single tone) signal. The rotor is a disc of dielectric material with a circular chain of SRRs., identical to the one of the stator, etched at the edge. By positioning the stator and the rotor with the SRR of the stator at short distance and face-to-face to the rotor chain, rotor motion modulates the amplitude of the feeding (carrier) signal at the output port of the line. This is due to the electromagnetic coupling between the SRR of the line and the SRRs of the chain, which in turn modulates the transmission coefficient of the line (stator) at the frequency of the carrier signal. Consequently, the envelope of the output (AM modulated) signal, which can be obtained by means of an envelope detector, exhibits pulses, and from the time distance between adjacent pulses, the angular velocity can be inferred. The main advantages of the proposed system, as compared to previous rotary encoders based on coplanar waveguide (CPW) technology, are backside isolation, necessary in certain applications, and, most important, major robustness against variations in the stator-to-rotor distance (air gap), caused by misalignments, rotor precession or rotor vibration.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"35 1","pages":"43-46"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79775333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439506
Ming Dong, Dongya Shen, Xiupu Zhang, Wenping Ren, Zu-Hui Ma, Rongrong Qian, Hong Yuan
In this paper., a seventh-order filter using substrate integrated gap waveguide (SIGW) technology., i.e. SIGW filter., is proposed for the first time., which has high selectivity and wide stopband. The SIGW filter includes three-layer substrates. The top layer substrate realizes a perfect magnetic conductor (PMC) using periodic plated vias and metallic patches. It is applied for packaging substrate integrated waveguide (SIW) filter to avoid interference and losses induced by external radiation emission and internal radiation leakage. The middle layer substrate generates a gap layer. In the base/bottom layer, cascaded resonators of the SIW filters are formed by properly etching slots on the metal plane and placing plated vias in the middle of this layer. The higher-order modes of TE103 and TE104 are suppressed using slots designed in the base layer at the third-order cavity, which leads to wide stopband. Moreover, the effect of the SIGW-based PMC structure on bandwidth and transmission zeroes is studied. The measured results demonstrate that the proposed SIGW filters perform well in the both passband and stopband.
{"title":"Substrate Integrated Gap Waveguide Bandpass Filters with High Selectivity and Wide Stopband","authors":"Ming Dong, Dongya Shen, Xiupu Zhang, Wenping Ren, Zu-Hui Ma, Rongrong Qian, Hong Yuan","doi":"10.1109/MWSYM.2018.8439506","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439506","url":null,"abstract":"In this paper., a seventh-order filter using substrate integrated gap waveguide (SIGW) technology., i.e. SIGW filter., is proposed for the first time., which has high selectivity and wide stopband. The SIGW filter includes three-layer substrates. The top layer substrate realizes a perfect magnetic conductor (PMC) using periodic plated vias and metallic patches. It is applied for packaging substrate integrated waveguide (SIW) filter to avoid interference and losses induced by external radiation emission and internal radiation leakage. The middle layer substrate generates a gap layer. In the base/bottom layer, cascaded resonators of the SIW filters are formed by properly etching slots on the metal plane and placing plated vias in the middle of this layer. The higher-order modes of TE103 and TE104 are suppressed using slots designed in the base layer at the third-order cavity, which leads to wide stopband. Moreover, the effect of the SIGW-based PMC structure on bandwidth and transmission zeroes is studied. The measured results demonstrate that the proposed SIGW filters perform well in the both passband and stopband.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"25 1","pages":"285-288"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84640612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439597
C. Florian, G. P. Gibiino, A. Santarelli
It is well known that the trap-induced performance degradation of microwave GaN-on-SiC HEMTs is proportional to the peak voltages applied at the device's terminals. Considering that RF $mathbf{GaN}$ switches are subject to high voltages, their characteristics are especially affected by trapping phenomena. This paper describes the GaN switch insertion loss (IL) degradation due to traps. A custom characterization setup is used for the measurement of the switch IL under dynamic voltage stress, typical of the actual operating regime. It is shown that, depending on the applied voltages setting the trap state, an increase of the switch IL up to 60% was measured for a $pmb{0.25 mumathrm{m}}$ GaN-on-SiC technology.
{"title":"Assessment of the Trap-Induced Insertion Loss Degradation of RF GaN Switches Under Operating Regimes","authors":"C. Florian, G. P. Gibiino, A. Santarelli","doi":"10.1109/MWSYM.2018.8439597","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439597","url":null,"abstract":"It is well known that the trap-induced performance degradation of microwave GaN-on-SiC HEMTs is proportional to the peak voltages applied at the device's terminals. Considering that RF $mathbf{GaN}$ switches are subject to high voltages, their characteristics are especially affected by trapping phenomena. This paper describes the GaN switch insertion loss (IL) degradation due to traps. A custom characterization setup is used for the measurement of the switch IL under dynamic voltage stress, typical of the actual operating regime. It is shown that, depending on the applied voltages setting the trap state, an increase of the switch IL up to 60% was measured for a $pmb{0.25 mumathrm{m}}$ GaN-on-SiC technology.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"15 1","pages":"732-735"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83333466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439174
Masaya Tamura, Yasumasa Naka, Kousuke Murai
This paper presents the design of a capacitive coupler for underwater wireless power transfer (U-WPT) focusing on kQ product. Power transfer efficiency hinges on the coupling coefficient $k$ of the coupler and unloaded Q-factor of water. First, $k$ is derived from the equivalent circuit of the coupler and it is elucidated that $k$ is dependent on the frequency. The pivotal elements that improve $k$ are also found. Next, the frequency characteristic of the Q-factor in tap water is calculated from the measured results. Then, the design parameters at maximum kQ product are determined. Finally, it is demonstrated that the efficiency of U-WPT with the designed coupler achieves 80.9% which is as high as a conventional magnetic coupling.
{"title":"Design of Capacitive Coupler for Wireless Power Transfer Under Fresh Water Focusing on kQ Product","authors":"Masaya Tamura, Yasumasa Naka, Kousuke Murai","doi":"10.1109/MWSYM.2018.8439174","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439174","url":null,"abstract":"This paper presents the design of a capacitive coupler for underwater wireless power transfer (U-WPT) focusing on kQ product. Power transfer efficiency hinges on the coupling coefficient $k$ of the coupler and unloaded Q-factor of water. First, $k$ is derived from the equivalent circuit of the coupler and it is elucidated that $k$ is dependent on the frequency. The pivotal elements that improve $k$ are also found. Next, the frequency characteristic of the Q-factor in tap water is calculated from the measured results. Then, the design parameters at maximum kQ product are determined. Finally, it is demonstrated that the efficiency of U-WPT with the designed coupler achieves 80.9% which is as high as a conventional magnetic coupling.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"36 1","pages":"1257-1260"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77836178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439321
Dhecha Nopchinda, T. Eriksson, K. Buisman
A method to estimate reflection coefficients in a loadpull environment with modulated signals is proposed, which can be applied during the design stage and characterization of devices and components for next generation systems. The technique is based on least-square estimation of the impulse response of a finite impulse response filter. The proposed technique along with the conventional method are described and analyzed theoretically. The two approaches are experimentally demonstrated, verified, and compared using a load pull measurement setup with 6W GaN power amplifier as the device under test. The proposed technique shows better performance for both in-band and out-of-band estimation of reflection coefficients.
{"title":"Estimation of Load-Pull Reflection Coefficients for Modulated Signals","authors":"Dhecha Nopchinda, T. Eriksson, K. Buisman","doi":"10.1109/MWSYM.2018.8439321","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439321","url":null,"abstract":"A method to estimate reflection coefficients in a loadpull environment with modulated signals is proposed, which can be applied during the design stage and characterization of devices and components for next generation systems. The technique is based on least-square estimation of the impulse response of a finite impulse response filter. The proposed technique along with the conventional method are described and analyzed theoretically. The two approaches are experimentally demonstrated, verified, and compared using a load pull measurement setup with 6W GaN power amplifier as the device under test. The proposed technique shows better performance for both in-band and out-of-band estimation of reflection coefficients.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"1 1","pages":"1168-1171"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83026136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439505
M. Varonen, K. Cleary, D. Karaca, Kari A. I. Halonerr
In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.
在本文中，我们报道了一种覆盖至少75至115 GHz频率范围的低温冷却CMOS放大器。放大芯片采用2S-nm FD SOI CMOS工艺制作。当低温冷却至20 K并在片上测量时，CMOS放大器显示lOS-ISS K噪声温度为75至115 GHz。这意味着噪声温度比室温噪声高6到8倍。测量的小信号增益约为20db。据作者所知，这是迄今为止报道的毫米波CMOS放大器和w波段最低CMOS LNA噪声温度的首次低温测量。
{"title":"Cryogenic Millimeter-Wave CMOS Low-Noise Amplifier","authors":"M. Varonen, K. Cleary, D. Karaca, Kari A. I. Halonerr","doi":"10.1109/MWSYM.2018.8439505","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439505","url":null,"abstract":"In this paper we report a cryogenically cooled CMOS amplifier covering at least 75 to 115 GHz frequency range. The amplifier chip was fabricated in 2S-nm FD SOI CMOS technology. When cryogenically cooled to 20 K and measured on-wafer the CMOS amplifier shows lOS-ISS K noise temperature from 75 to 115 GHz. This means 6 to 8 times improvement in noise temperature compared to room temperature noise. The measured small-signal gain is around 20 dB. To the best of authors' knowledge, these are the first cryogenic measurements of millimeter-wave CMOS amplifiers and lowest CMOS LNA noise temperatures for W-Band reported to date.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"11 1","pages":"1503-1506"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82726620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439273
Alexander Standaert, P. Reynaert
This paper presents a 400 GHz radiating source in 28 nm CMOS technology with a 3D printed horn antenna directly mounted on-top of a on-chip waveguide feed. The CMOS chip is composed of two mutually-coupled triple-push oscillators and a differential microstrip to waveguide transition. A custom horn antenna is mounted on top of this waveguide feed, enabling an efficient and high gain output. The horn antenna is fabricated using a two-photon lithography 3D printing process. The part is metallized with platinum and copper through physical vapor deposition and electroplating. The measured EIRP of the fully integrated system is 1.26 dBm which is 13 dB higher then the EIRP of the standalone transmitter.
{"title":"A 400 GHz Transmitter Integrated with Flip-chiped 3D Printed Horn Antenna with an EIRP of 1.26dBm","authors":"Alexander Standaert, P. Reynaert","doi":"10.1109/MWSYM.2018.8439273","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439273","url":null,"abstract":"This paper presents a 400 GHz radiating source in 28 nm CMOS technology with a 3D printed horn antenna directly mounted on-top of a on-chip waveguide feed. The CMOS chip is composed of two mutually-coupled triple-push oscillators and a differential microstrip to waveguide transition. A custom horn antenna is mounted on top of this waveguide feed, enabling an efficient and high gain output. The horn antenna is fabricated using a two-photon lithography 3D printing process. The part is metallized with platinum and copper through physical vapor deposition and electroplating. The measured EIRP of the fully integrated system is 1.26 dBm which is 13 dB higher then the EIRP of the standalone transmitter.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"72 4 1","pages":"141-144"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90722344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439859
Praveen Jaraut, M. Rawat, F. Ghannouchi
This paper investigates the issue of high complexity of digital predistortion for the nonlinear distortion introduced due to crosstalk in addition to the nonlinear distortion generated by a power amplifier (PA) in $mathbf{2}times mathbf{2}$ MIMO transmitters. This paper proposes a less complex, novel model for digital predistortion (DPD) for linearizing multiple-input multiple-output (MIMO) transmitters. This model is constructed by taking account of both linear and nonlinear crosstalks, along with the fact that the nonlinearity generated due to crosstalk would be lesser than the nonlinearity already available due to PA. For proof-of-concept, it is shown for two different scenarios that proposed model provides similar linearization performance as compared to $mathbf{2}times mathbf{2}$ PH model with less number of coefficients.
{"title":"Curtailed Digital Predistortion Model for Crosstalk in MIMO Transmitters","authors":"Praveen Jaraut, M. Rawat, F. Ghannouchi","doi":"10.1109/MWSYM.2018.8439859","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439859","url":null,"abstract":"This paper investigates the issue of high complexity of digital predistortion for the nonlinear distortion introduced due to crosstalk in addition to the nonlinear distortion generated by a power amplifier (PA) in $mathbf{2}times mathbf{2}$ MIMO transmitters. This paper proposes a less complex, novel model for digital predistortion (DPD) for linearizing multiple-input multiple-output (MIMO) transmitters. This model is constructed by taking account of both linear and nonlinear crosstalks, along with the fact that the nonlinearity generated due to crosstalk would be lesser than the nonlinearity already available due to PA. For proof-of-concept, it is shown for two different scenarios that proposed model provides similar linearization performance as compared to $mathbf{2}times mathbf{2}$ PH model with less number of coefficients.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"3 1","pages":"927-930"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90075507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439633
Zongqi Cai, Xiaohong Tang, Ting Zhang, Yang Yang
This paper presents a low phase noise oscillator with high harmonic suppression employing a pair of substrate integrated waveguide (SIW) quarter-wavelength resonators (QWR) in the feedback loop of the oscillator. By tuning the width of the SIW-QWR based filter, the stopband bandwidth can be extended while maintaining the high group delay in the passband. Taking advantages of the proposed SIW-QWR, an X-band low phase noise oscillator with the second and third harmonic suppression is designed, fabricated and tested. The measured results show that the oscillator operates at 8.08 GHz with −2.14 dBm output power. The second and third harmonic suppression of the presented oscillator can reach to 39.23 dB and 67.64 dB, respectively, with a single SIW-QWR filter. The phase noise performance of the proposed oscillator are −109.94 dBc/Hz at 100 kHz frequency offset and − 130.36 dBc/Hz at 1 MHz frequency offset, respectively.
{"title":"An X-band Low Phase Noise Oscillator with High Harmonic Suppression Using SIW Quarter-Wavelength Resonator","authors":"Zongqi Cai, Xiaohong Tang, Ting Zhang, Yang Yang","doi":"10.1109/MWSYM.2018.8439633","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439633","url":null,"abstract":"This paper presents a low phase noise oscillator with high harmonic suppression employing a pair of substrate integrated waveguide (SIW) quarter-wavelength resonators (QWR) in the feedback loop of the oscillator. By tuning the width of the SIW-QWR based filter, the stopband bandwidth can be extended while maintaining the high group delay in the passband. Taking advantages of the proposed SIW-QWR, an X-band low phase noise oscillator with the second and third harmonic suppression is designed, fabricated and tested. The measured results show that the oscillator operates at 8.08 GHz with −2.14 dBm output power. The second and third harmonic suppression of the presented oscillator can reach to 39.23 dB and 67.64 dB, respectively, with a single SIW-QWR filter. The phase noise performance of the proposed oscillator are −109.94 dBc/Hz at 100 kHz frequency offset and − 130.36 dBc/Hz at 1 MHz frequency offset, respectively.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"39 3 1","pages":"427-430"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86782695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439306
R. Bahr, Xuanke He, B. Tehrani, M. Tentzeris
In the first demonstration of multimaterial stereo-lithography 3D printing for electromagnetic applications, two 2×2 mm dies of different thicknesses (150 and 200 urn) are interconnected with inkjet printing of silver nanoparticle inks (SNP) to form 3-D interconnects. The dies are encapsulated utilizing Stere-olithography (SLA) 3-D printing with an acrylate photopolymer resin. A 24.125 GHz right hand circular (RHC) patch antenna is inkjet printed with a novel beam forming ring (BFR) embedded into an integrated hollow dielectric lens of a secondary SLA printed ceramic photopolymer, enabling improved gain and reducing the size while avoiding dielectric loading and losses. The ability to 3-D print multiple materials of different dielectric constants at optical resolutions enables the formations of entirely new structures to be integrated into system-on-package solutions for mm-wave applications.
{"title":"A Fully 3D Printed Multi-Chip Module with an On-Package Enhanced Dielectric Lens for mm-Wave Applications Using Multimaterial Stereo-lithography","authors":"R. Bahr, Xuanke He, B. Tehrani, M. Tentzeris","doi":"10.1109/MWSYM.2018.8439306","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439306","url":null,"abstract":"In the first demonstration of multimaterial stereo-lithography 3D printing for electromagnetic applications, two 2×2 mm dies of different thicknesses (150 and 200 urn) are interconnected with inkjet printing of silver nanoparticle inks (SNP) to form 3-D interconnects. The dies are encapsulated utilizing Stere-olithography (SLA) 3-D printing with an acrylate photopolymer resin. A 24.125 GHz right hand circular (RHC) patch antenna is inkjet printed with a novel beam forming ring (BFR) embedded into an integrated hollow dielectric lens of a secondary SLA printed ceramic photopolymer, enabling improved gain and reducing the size while avoiding dielectric loading and losses. The ability to 3-D print multiple materials of different dielectric constants at optical resolutions enables the formations of entirely new structures to be integrated into system-on-package solutions for mm-wave applications.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"120 1","pages":"1561-1564"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87843478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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