Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439469
Dong Chen, Yu Peng, Tianjun Wu, Y. Liu, Huihua Liu, Chenxi Zhao, Yunqiu Wu, K. Kang
A group-delay compensation power amplifier (PA) is proposed in this paper. Equalizer based on the all-pass filter is used to reduce the chirp signal linearity distortion caused by the nonlinear group delay of the PA. The group delay variation of the whole PA is less than $pmb{pm 5p}mathbf{s}$. An auto power-level control loop is adopted to stabilize the output power against the temperature and process variation. The control loop is based on the power detector and charge pump. The different output power level can be set using the loop directly to satisfy the needs of different detection distance. The power gain of the PA is 21.5 dB and the maximum output power is 14.5 dBm. The $pmb{2f_{0}}$ impedance is controlled to improve the power added efficiency (PAE). The maximum PAE reaches 33.5%. The size of the whole chip is $pmb{0.8}mathbf{x}pmb{0.9}mathbf{mm}^{pmb{2}}$.
{"title":"A Group Delay Compensation Power Amplifier with Auto Power Level Control for 24GHz FMCW Automobile Radar Application","authors":"Dong Chen, Yu Peng, Tianjun Wu, Y. Liu, Huihua Liu, Chenxi Zhao, Yunqiu Wu, K. Kang","doi":"10.1109/MWSYM.2018.8439469","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439469","url":null,"abstract":"A group-delay compensation power amplifier (PA) is proposed in this paper. Equalizer based on the all-pass filter is used to reduce the chirp signal linearity distortion caused by the nonlinear group delay of the PA. The group delay variation of the whole PA is less than $pmb{pm 5p}mathbf{s}$. An auto power-level control loop is adopted to stabilize the output power against the temperature and process variation. The control loop is based on the power detector and charge pump. The different output power level can be set using the loop directly to satisfy the needs of different detection distance. The power gain of the PA is 21.5 dB and the maximum output power is 14.5 dBm. The $pmb{2f_{0}}$ impedance is controlled to improve the power added efficiency (PAE). The maximum PAE reaches 33.5%. The size of the whole chip is $pmb{0.8}mathbf{x}pmb{0.9}mathbf{mm}^{pmb{2}}$.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"3 1","pages":"457-460"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78481083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439558
Xiang Wang, B. Wei, B. Cao, Xubo Guo
This paper presents a new type superconducting diplexer designed with double-side structure. The two channels of the diplexer are located on the different layers of the superconducting thin films. One channel consists of four-pole microstrip stepped impedance resonators(MSIR) on the upper side, while the other channel consists of four-pole slotline stepped impedance res-onators(SSIR) on the back side. In this paper, the coupling of MSIR-SSIR and MSIR-MSIR is compared, and the simulated results show that the latter is weaker than the former in a certain distance. High isolation between the two channels is therefore achieved because of their highly suppressed unwanted cross-cou-pling. The diplexer is fabricated on a MgO substrate with a dou-ble-side-coated 500-nm-thick YBCO HTS thin films and exhibits high performance. The measurements agree well with the simulations” and the isolation is over 45dB.
{"title":"High isolation Superconducting Diplexer Designed with Double-Side Structure","authors":"Xiang Wang, B. Wei, B. Cao, Xubo Guo","doi":"10.1109/MWSYM.2018.8439558","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439558","url":null,"abstract":"This paper presents a new type superconducting diplexer designed with double-side structure. The two channels of the diplexer are located on the different layers of the superconducting thin films. One channel consists of four-pole microstrip stepped impedance resonators(MSIR) on the upper side, while the other channel consists of four-pole slotline stepped impedance res-onators(SSIR) on the back side. In this paper, the coupling of MSIR-SSIR and MSIR-MSIR is compared, and the simulated results show that the latter is weaker than the former in a certain distance. High isolation between the two channels is therefore achieved because of their highly suppressed unwanted cross-cou-pling. The diplexer is fabricated on a MgO substrate with a dou-ble-side-coated 500-nm-thick YBCO HTS thin films and exhibits high performance. The measurements agree well with the simulations” and the isolation is over 45dB.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"34 1","pages":"1076-1078"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80451087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439503
Hussam AlSharnrnary, C. Hill, Ahmed Hamza, J. Buckwalter
This paper demonstrates transmit rejection with a quarter-wave $(lambda/4)$ transformer that inverts the response of a shunt $N$-path filter to break the inherent $N$-path trade-offs between switch resistance and rejection. A 45-nm CMOS SOI filter supports both frequency and code selective filtering modes. The chip consumes a power of 9.37 mW from I-V and 1.8-V supplies at frequency of 0.9-1.1 GHz and the chip area is 1.77mm2. The transmit rejection is 21.9 dB with 3.3 dB insertion loss. The in-band third-order-intercept point (IIP3) is 22.6 dBm.
{"title":"A λ/4-lnverted N-path Filter in 45-nm CMOS SOI for Transmit Rejection with Code Selective Filters","authors":"Hussam AlSharnrnary, C. Hill, Ahmed Hamza, J. Buckwalter","doi":"10.1109/MWSYM.2018.8439503","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439503","url":null,"abstract":"This paper demonstrates transmit rejection with a quarter-wave $(lambda/4)$ transformer that inverts the response of a shunt $N$-path filter to break the inherent $N$-path trade-offs between switch resistance and rejection. A 45-nm CMOS SOI filter supports both frequency and code selective filtering modes. The chip consumes a power of 9.37 mW from I-V and 1.8-V supplies at frequency of 0.9-1.1 GHz and the chip area is 1.77mm2. The transmit rejection is 21.9 dB with 3.3 dB insertion loss. The in-band third-order-intercept point (IIP3) is 22.6 dBm.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"4 1","pages":"1370-1373"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76932941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439860
Bhaskara Rupakula, Abdurrahman H. Aljuhani, Gabriel M. Rebeiz
Phased array transmit systems use several antennas to combine RF power-amplifiers in free space. If all the RF channels are identical, then the transmit spectrum in the far-field, including both linear and nonlinear components, would be a scaled version of the output spectrum of each channel. However, random variations in the nonlinear components (AM-AM and AM-PM conversion) between the channels improves the nonlinearity of the overall array as the number of elements increases. In this paper, measured results are used to show that the adjacent channel power ratio, which is one metric of linearity, improves with the number of elements at a fixed backoff from the 1 dB compression point. Also, for a 100 Mbaud 64QAM signal and a fixed ACPR of −32 dBc, a 256-element phased-array can be operated at $P_{1dB}-2mathbf{dB}$, while an 8-element phased-array would need to be operated at $P_{1dB}-4mathbf{dB}$ for the same ACPR level. This work has great implications on the overall efficiency of 5G phased arrays since it implies that large phased-arrays can be operated at less back-off than small phased-arrays (or single antennas with high power amplifiers). Thus, in reality and taking the ACPR as the figure of merit, phased-arrays are 2 dB more efficient than what is predicted by standard system simulations which assume the same non-linear response for all the phased-array channels.
{"title":"Linearity and Efficiency Improvements in Phased-Array Transmitters with Large Number of Elements and Complex Modulation","authors":"Bhaskara Rupakula, Abdurrahman H. Aljuhani, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2018.8439860","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439860","url":null,"abstract":"Phased array transmit systems use several antennas to combine RF power-amplifiers in free space. If all the RF channels are identical, then the transmit spectrum in the far-field, including both linear and nonlinear components, would be a scaled version of the output spectrum of each channel. However, random variations in the nonlinear components (AM-AM and AM-PM conversion) between the channels improves the nonlinearity of the overall array as the number of elements increases. In this paper, measured results are used to show that the adjacent channel power ratio, which is one metric of linearity, improves with the number of elements at a fixed backoff from the 1 dB compression point. Also, for a 100 Mbaud 64QAM signal and a fixed ACPR of −32 dBc, a 256-element phased-array can be operated at $P_{1dB}-2mathbf{dB}$, while an 8-element phased-array would need to be operated at $P_{1dB}-4mathbf{dB}$ for the same ACPR level. This work has great implications on the overall efficiency of 5G phased arrays since it implies that large phased-arrays can be operated at less back-off than small phased-arrays (or single antennas with high power amplifiers). Thus, in reality and taking the ACPR as the figure of merit, phased-arrays are 2 dB more efficient than what is predicted by standard system simulations which assume the same non-linear response for all the phased-array channels.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"400 1","pages":"791-793"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76440596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439235
S. Montazeri, J. Bardin
In this paper, the cryogenic noise performance of the TowerJazz SBC18H3 technology is studied. First, cryogenic small-signal noise models are developed for a SiGe HBT from this process. At a physical temperature of 16.5 K, it is found that a noise temperature as low as 1.5 K is possible at 3 GHz. Leveraging the modeling results, a 2–4 GHz MMIC low noise amplifier is designed and implemented. The amplifier provides a gain of 28 dB and a noise temperature between 3.3 and 4 K while consuming just 3mW of DC power. Moreover, excellent agreement between the cryogenic model and the experimental measurements is observed. To the best of authors' knowledge this is the lowest noise temperature reported for a low-power integrated SiGe low noise amplifier.
{"title":"A 2–4 GHz Silicon Germanium Cryogenic Low Noise Amplifier MMIC","authors":"S. Montazeri, J. Bardin","doi":"10.1109/MWSYM.2018.8439235","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439235","url":null,"abstract":"In this paper, the cryogenic noise performance of the TowerJazz SBC18H3 technology is studied. First, cryogenic small-signal noise models are developed for a SiGe HBT from this process. At a physical temperature of 16.5 K, it is found that a noise temperature as low as 1.5 K is possible at 3 GHz. Leveraging the modeling results, a 2–4 GHz MMIC low noise amplifier is designed and implemented. The amplifier provides a gain of 28 dB and a noise temperature between 3.3 and 4 K while consuming just 3mW of DC power. Moreover, excellent agreement between the cryogenic model and the experimental measurements is observed. To the best of authors' knowledge this is the lowest noise temperature reported for a low-power integrated SiGe low noise amplifier.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"557 1","pages":"1487-1490"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87009981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439660
A. D. Pitcher, J. McCombe, E. A. Eveleigh, N. Nikolova
An ultra-wideband (UWB) transmitter has been designed to produce a differentiated Gaussian (monocycle) pulse in a 1:10 bandwidth (500 MHz to 5 GHz). The transmitter is a module in a compact low-cost radar for the stand-off detection of on-body concealed weapons. The detection exploits the late-time resonances in the radar return. The requirements for the transmitter are presented and the performance of the fabricated prototype is validated. The pulse peak-to-peak jitter and the noise are analyzed and shown to be comparable to those in a pulse generated using a high-performance benchtop arbitrary waveform generator (AWG).
{"title":"Compact Transmitter for Pulsed-Radar Detection of On-Body Concealed Weapons","authors":"A. D. Pitcher, J. McCombe, E. A. Eveleigh, N. Nikolova","doi":"10.1109/MWSYM.2018.8439660","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439660","url":null,"abstract":"An ultra-wideband (UWB) transmitter has been designed to produce a differentiated Gaussian (monocycle) pulse in a 1:10 bandwidth (500 MHz to 5 GHz). The transmitter is a module in a compact low-cost radar for the stand-off detection of on-body concealed weapons. The detection exploits the late-time resonances in the radar return. The requirements for the transmitter are presented and the performance of the fabricated prototype is validated. The pulse peak-to-peak jitter and the noise are analyzed and shown to be comparable to those in a pulse generated using a high-performance benchtop arbitrary waveform generator (AWG).","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"24 1","pages":"919-922"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86360772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Schweizer, Daniel Schindler, Christina Knilll, J. Hasch, C. Waldschmidt
Orthogonal frequency-division multiplexing (OFDM) is a promising candidate for future digital-centric radar systems. One major limitation for practical implementations is the required sampling rate in the order of GHz, which can be solved by using a stepped-carrier technique in combination with OFDM signals of smaller bandwidth, theoretically resulting in the same resolution as a conventional OFDM scheme. However, a signal source capable of generating such a carrier has to fulfill several constraints. In this paper, the effects of deterministic and random inaccuracies of the carrier generation as well as effects of phase noise are described and evaluated. A transient model that describes the switching between carriers is given and all effects are verified using a radar demonstrator at 77 GHz.
{"title":"On Hardware Implementations of Stepped-Carrier OFDM Radars","authors":"B. Schweizer, Daniel Schindler, Christina Knilll, J. Hasch, C. Waldschmidt","doi":"10.18725/OPARU-12028","DOIUrl":"https://doi.org/10.18725/OPARU-12028","url":null,"abstract":"Orthogonal frequency-division multiplexing (OFDM) is a promising candidate for future digital-centric radar systems. One major limitation for practical implementations is the required sampling rate in the order of GHz, which can be solved by using a stepped-carrier technique in combination with OFDM signals of smaller bandwidth, theoretically resulting in the same resolution as a conventional OFDM scheme. However, a signal source capable of generating such a carrier has to fulfill several constraints. In this paper, the effects of deterministic and random inaccuracies of the carrier generation as well as effects of phase noise are described and evaluated. A transient model that describes the switching between carriers is given and all effects are verified using a radar demonstrator at 77 GHz.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"39 1","pages":"891-894"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88885823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439607
Chang Ding, F. Meng, Lizhong Song
In this paper, a design of Ku-band compact dual polarized horn arrays is presented. To achieve high gain and low grating lobe level, square horns are arranged in a line array with metal grids on the aperture. In addition, only one orthomode transducer is connected with the waveguide power divider to achieve the dual polarization. The entire structure of the antenna is compact and efficient. The design has been accomplished using commercially available software HFSS. The simulated antenna attains a gain of about 22 dBi for the two ports. An isolation level of more than 50 dB between the two ports and better than −40 dB cross-polarization levels can be achieved from the dual-feeding mechanism. In addition, this structure has promised features in term of low cost, good impedance match, small size, and radiation pattern. A prototype of the proposed design has been fabricated and tested. Good agreement is achieved between simulations and measurements.
{"title":"Design of a Ku-band Compact Dual Polarized Horn Arrays with OMT","authors":"Chang Ding, F. Meng, Lizhong Song","doi":"10.1109/MWSYM.2018.8439607","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439607","url":null,"abstract":"In this paper, a design of Ku-band compact dual polarized horn arrays is presented. To achieve high gain and low grating lobe level, square horns are arranged in a line array with metal grids on the aperture. In addition, only one orthomode transducer is connected with the waveguide power divider to achieve the dual polarization. The entire structure of the antenna is compact and efficient. The design has been accomplished using commercially available software HFSS. The simulated antenna attains a gain of about 22 dBi for the two ports. An isolation level of more than 50 dB between the two ports and better than −40 dB cross-polarization levels can be achieved from the dual-feeding mechanism. In addition, this structure has promised features in term of low cost, good impedance match, small size, and radiation pattern. A prototype of the proposed design has been fabricated and tested. Good agreement is achieved between simulations and measurements.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"35 1","pages":"1585-1588"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88994410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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