Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059552
Lewis Huang, Hiroki Sudo, Daisuke Soma, H. Okada
As the next-generation interconnection materials, Cu core column is a kind of cylindrical-shaped copper core with Ni and solder plating. It could replace ordinary solder balls, Cu core balls and even Cu plated posts and has become the focus of attention. Cu core columns have innately ability to control and maintain a consistent standoff height, and can achieve excellent electrical and thermal conductivity due to the excellent physical properties of copper. It is known that the Cu core column can exhibit sufficient performance compare with solder balls and Cu core balls. In this study, after experiment we know Cu core columns with lower aspect ratio and small core diameter is better for drop test. Cu core columns with higher aspect ratio and less solder amount is better for Thermal Cycle Test.
{"title":"CU Core Column Enables Fine Pitch & High-Density 3D Packaging","authors":"Lewis Huang, Hiroki Sudo, Daisuke Soma, H. Okada","doi":"10.23919/PanPacific48324.2020.9059552","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059552","url":null,"abstract":"As the next-generation interconnection materials, Cu core column is a kind of cylindrical-shaped copper core with Ni and solder plating. It could replace ordinary solder balls, Cu core balls and even Cu plated posts and has become the focus of attention. Cu core columns have innately ability to control and maintain a consistent standoff height, and can achieve excellent electrical and thermal conductivity due to the excellent physical properties of copper. It is known that the Cu core column can exhibit sufficient performance compare with solder balls and Cu core balls. In this study, after experiment we know Cu core columns with lower aspect ratio and small core diameter is better for drop test. Cu core columns with higher aspect ratio and less solder amount is better for Thermal Cycle Test.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"15 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82424767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059499
Mark McMeen, M. Bixenman
There are many factors contributing to electrochemical failures on electronic devices including pitch, electrical field, ionic contamination and environmental conditions. Each of these factors is dependent on the installation location, with exposure to varying temperatures and humidity. The interactions of all these factors are quite complex, and being able to predict potential electrochemical failures is challenging. A series of detection and preventive measures from the qualification of solder pastes to controlling the ionic contamination levels of the materials in production is needed. The purpose of this research is to characterize this problem by varying humidity and temperature conditions. Humid heat simulates the thermal load of the components under test at high humidity levels with cyclic temperature conditions. Condensation tests verify the design, materials, and remaining electronic circuit residues' resistance to moisture. The test methodology used for this research study will subject the test cards to humid heat and cyclic temperatures with frost conditions. The harsh environment simulates the thermal load including frost cycling to induce low dewing point conditions through cyclic temperature changes at high humidity. Humid environments challenge no-clean electronics and the basis for detecting electrochemical robustness at various points during the design validation testing.
{"title":"Design for Manufacture and Test Using Thermal Cycling Under Bias to Measure Electrochemical Reliability on Bottom Terminated Components","authors":"Mark McMeen, M. Bixenman","doi":"10.23919/PanPacific48324.2020.9059499","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059499","url":null,"abstract":"There are many factors contributing to electrochemical failures on electronic devices including pitch, electrical field, ionic contamination and environmental conditions. Each of these factors is dependent on the installation location, with exposure to varying temperatures and humidity. The interactions of all these factors are quite complex, and being able to predict potential electrochemical failures is challenging. A series of detection and preventive measures from the qualification of solder pastes to controlling the ionic contamination levels of the materials in production is needed. The purpose of this research is to characterize this problem by varying humidity and temperature conditions. Humid heat simulates the thermal load of the components under test at high humidity levels with cyclic temperature conditions. Condensation tests verify the design, materials, and remaining electronic circuit residues' resistance to moisture. The test methodology used for this research study will subject the test cards to humid heat and cyclic temperatures with frost conditions. The harsh environment simulates the thermal load including frost cycling to induce low dewing point conditions through cyclic temperature changes at high humidity. Humid environments challenge no-clean electronics and the basis for detecting electrochemical robustness at various points during the design validation testing.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"64 1","pages":"1-12"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80972531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059496
Ji-Seok Lee, I. Yun
Recently, as the data usage increases, the memory usage for storing the data also increases. A lot of researches have been done to reduce the production cost of the solid state drive (SSD) using NAND structure, which is widely used as a storage device along with the hard disk drive (HDD). One of them is to change the NAND structure from 2-D to 3-D by using the charge trap flash (CTF) technology, which is using nitride material (i.e., TANOS) in the floating gate instead of the conventional poly-silicon (i.e., SONOS). As the structure and material are changed, the characteristics of the device are also changed. One of the important functions of memory is the ability to preserve the data. Thus, in this paper the long-term evaluation of TANOS structure is investigated and the prediction of retention characteristic can be evaluated through the accelerated tests. We analyzed the behavior characteristics through experiments and Technology Computer Aided Design (TCAD) simulation to improve the accuracy of long-term data retention in TANOS (Tantalum-Alumina-Nitride-Oxide-Silicon) which is one of 3-D NAND. We also examined the effects of time and temperature about data retention by dividing them into four mechanisms: Schottky emission, Fowler-Nordheim (FN) tunneling, Poole-Frenkel (PF) emission, and trap-assisted tunneling.
{"title":"Anaylysis of Mechanism About Data Retention Characteristic in Tanos Structure","authors":"Ji-Seok Lee, I. Yun","doi":"10.23919/PanPacific48324.2020.9059496","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059496","url":null,"abstract":"Recently, as the data usage increases, the memory usage for storing the data also increases. A lot of researches have been done to reduce the production cost of the solid state drive (SSD) using NAND structure, which is widely used as a storage device along with the hard disk drive (HDD). One of them is to change the NAND structure from 2-D to 3-D by using the charge trap flash (CTF) technology, which is using nitride material (i.e., TANOS) in the floating gate instead of the conventional poly-silicon (i.e., SONOS). As the structure and material are changed, the characteristics of the device are also changed. One of the important functions of memory is the ability to preserve the data. Thus, in this paper the long-term evaluation of TANOS structure is investigated and the prediction of retention characteristic can be evaluated through the accelerated tests. We analyzed the behavior characteristics through experiments and Technology Computer Aided Design (TCAD) simulation to improve the accuracy of long-term data retention in TANOS (Tantalum-Alumina-Nitride-Oxide-Silicon) which is one of 3-D NAND. We also examined the effects of time and temperature about data retention by dividing them into four mechanisms: Schottky emission, Fowler-Nordheim (FN) tunneling, Poole-Frenkel (PF) emission, and trap-assisted tunneling.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"7 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81831881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059405
Prabjit Singh, L. Palmer, M. Gaynes
Data center proliferation continues unabated consuming ever-increasing amounts of energy. The rising energy-associated computing costs can be somewhat contained by cost cutting measures such as not tightly controlling the temperature and humidity levels in data centers and in many cases resorting to airside economizers and direct evaporative air cooling, but as a result, exposing hardware to the associated risk of reliability degradation from particulate and gaseous contamination entering data centers. Conformal coating is a proven means of physically protecting electronic hardware so that it can operate reliably in polluted and humid environments. There are two obvious ways of testing the performance of conformal coatings. One is the conventional approach based on determining the mean time to failure of coated hardware exposed to a corrosive environment. The other method, that is the subject of this paper, is based on conformally coating metal thin films and measuring their corrosion rates in a corrosion environment. A convenient corrosive environment is a flowers of sulfur chamber. In this paper, the performance of conformal coatings was determined, via this second approach, as a function of temperature under very low and relatively constant humidity condition. The results were compared to those from the convention approach involving coating the actual hardware. The activation energies of metal thin film corrosion and diffusion of the corrodents through the conformal coatings will also be reported.
{"title":"Conformal Coating Characterization Using Stacked Silver Thin Films","authors":"Prabjit Singh, L. Palmer, M. Gaynes","doi":"10.23919/PanPacific48324.2020.9059405","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059405","url":null,"abstract":"Data center proliferation continues unabated consuming ever-increasing amounts of energy. The rising energy-associated computing costs can be somewhat contained by cost cutting measures such as not tightly controlling the temperature and humidity levels in data centers and in many cases resorting to airside economizers and direct evaporative air cooling, but as a result, exposing hardware to the associated risk of reliability degradation from particulate and gaseous contamination entering data centers. Conformal coating is a proven means of physically protecting electronic hardware so that it can operate reliably in polluted and humid environments. There are two obvious ways of testing the performance of conformal coatings. One is the conventional approach based on determining the mean time to failure of coated hardware exposed to a corrosive environment. The other method, that is the subject of this paper, is based on conformally coating metal thin films and measuring their corrosion rates in a corrosion environment. A convenient corrosive environment is a flowers of sulfur chamber. In this paper, the performance of conformal coatings was determined, via this second approach, as a function of temperature under very low and relatively constant humidity condition. The results were compared to those from the convention approach involving coating the actual hardware. The activation energies of metal thin film corrosion and diffusion of the corrodents through the conformal coatings will also be reported.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"41 1","pages":"1-8"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85455196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059382
M. Bixenman, Mark McMeen
A significant contributor to electrochemical related “no-fault found” customer returns are leakage current failures. Leakage current failures depend on the humidity levels, presence of ionic contaminants, and potential bias between metal interconnects on an electronic circuit. This type of failure is difficult to isolate as the fault may occur due to an initial interruption to functionality without further recurrence. Isolating the root cause of leakage current failures is gained by understanding proper design rules for low clearance components. One of the significant factors for controlling the water film formation and subsequent corrosion failure is the process-related contamination resulting from the reflow soldering process. The effect of flux residue on humidity related failures depends on the amount and chemistry of the residue, especially the ionic activator component in the flux component. The standoff height, from the assembly surface to the bottom of the component, factors into the level and activity of the flux trapped under the components termination. The purpose of this paper is to research the activity of flux residues as a function of the standoff height using insulation resistance. A second factor that will be part of this research is design options for outgassing flux residues.
{"title":"Electrochemical Reliability as a Function of Component Standoff","authors":"M. Bixenman, Mark McMeen","doi":"10.23919/PanPacific48324.2020.9059382","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059382","url":null,"abstract":"A significant contributor to electrochemical related “no-fault found” customer returns are leakage current failures. Leakage current failures depend on the humidity levels, presence of ionic contaminants, and potential bias between metal interconnects on an electronic circuit. This type of failure is difficult to isolate as the fault may occur due to an initial interruption to functionality without further recurrence. Isolating the root cause of leakage current failures is gained by understanding proper design rules for low clearance components. One of the significant factors for controlling the water film formation and subsequent corrosion failure is the process-related contamination resulting from the reflow soldering process. The effect of flux residue on humidity related failures depends on the amount and chemistry of the residue, especially the ionic activator component in the flux component. The standoff height, from the assembly surface to the bottom of the component, factors into the level and activity of the flux trapped under the components termination. The purpose of this paper is to research the activity of flux residues as a function of the standoff height using insulation resistance. A second factor that will be part of this research is design options for outgassing flux residues.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"14 1","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86461819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059471
Phillip Isaacs, Jing Zhang, T. Munson
Dendrites, Electrochemical Migration (ECM) and parasitic leakage, are usually caused by process related contamination. For example, excess flux, poor handling, extraneous solder, fibers, to name a few. One does not normally relate these fails with environmental causes. However, creep corrosion is a mechanism by which electronic products fail in application, primarily related to sulfur pollution present in the air.1 The sulfur reacts with exposed silver, and to a lesser extent, exposed copper. This paper will explore various aspects of the creep corrosion chemical reaction: 1.What is driving the creep corrosion reaction? 2.Why is drying the product a necessary precursor to obtaining creep corrosion in tests?2, 3 3.Test methods with Flowers of Sulfur, FoS, and sulfur rich clay. 4.Discussion of creep corrosion related field fails. 5.When does creep corrosion become ECM. 6.Sources of sulfur containing pollution. 7.Methods to take to avoid creep corrosion. While there are places with sulfur containing pollution, creep corrosion will be a factor which will impact reliability. Creep corrosion will need to be understood and handled.
{"title":"Understanding Creep Corrosion Field Fails","authors":"Phillip Isaacs, Jing Zhang, T. Munson","doi":"10.23919/PanPacific48324.2020.9059471","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059471","url":null,"abstract":"Dendrites, Electrochemical Migration (ECM) and parasitic leakage, are usually caused by process related contamination. For example, excess flux, poor handling, extraneous solder, fibers, to name a few. One does not normally relate these fails with environmental causes. However, creep corrosion is a mechanism by which electronic products fail in application, primarily related to sulfur pollution present in the air.1 The sulfur reacts with exposed silver, and to a lesser extent, exposed copper. This paper will explore various aspects of the creep corrosion chemical reaction: 1.What is driving the creep corrosion reaction? 2.Why is drying the product a necessary precursor to obtaining creep corrosion in tests?2, 3 3.Test methods with Flowers of Sulfur, FoS, and sulfur rich clay. 4.Discussion of creep corrosion related field fails. 5.When does creep corrosion become ECM. 6.Sources of sulfur containing pollution. 7.Methods to take to avoid creep corrosion. While there are places with sulfur containing pollution, creep corrosion will be a factor which will impact reliability. Creep corrosion will need to be understood and handled.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"28 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88000827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-02-01DOI: 10.23919/PanPacific48324.2020.9059313
Nadia L. Clement, R. Lasky
Weibull Analysis, while initially met with skepticism, is now used across many disciplines in reliability and survival analysis. This paper will provide an overview of the Weibull distribution, its variables, the types of data required, and the interpretations that can be drawn from a Weibull distribution. The appendix will provide a tutorial on Weibull Analysis in Minitab.
{"title":"Weibull Distribution and Analysis: 2019","authors":"Nadia L. Clement, R. Lasky","doi":"10.23919/PanPacific48324.2020.9059313","DOIUrl":"https://doi.org/10.23919/PanPacific48324.2020.9059313","url":null,"abstract":"Weibull Analysis, while initially met with skepticism, is now used across many disciplines in reliability and survival analysis. This paper will provide an overview of the Weibull distribution, its variables, the types of data required, and the interpretations that can be drawn from a Weibull distribution. The appendix will provide a tutorial on Weibull Analysis in Minitab.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"75 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86170752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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