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Quantized Rectified Conductance as a Probe of Fermi Sea Topology in D-Wave Superconductors 量子化整流电导作为d波超导体中费米海拓扑的探针
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-07 DOI: 10.1007/s10948-025-07126-z
Hongyu Tian, Yuqiao Ren

We study the Fermi surface topology of a two-dimensional electron gas (2DEG) proximitized by d-wave superconductors in a linear superconductor–normal–superconductor (SNS) Josephson junction with a (pi) phase difference. Owing to nodal quasiparticles and the anisotropic gap, the d-wave case differs qualitatively from the isotropic s-wave case: the nonlocal conductance is no longer directly tied to the number of critical points on the Fermi surface. Instead, we show that the rectified conductance remains quantized at low bias and faithfully encodes the Fermi surface topology via the Euler number (chi _F). This quantized response persists even for complex or multi-pocket Fermi surfaces, establishing rectified conductance as a robust and experimentally accessible probe of Fermi surface topology in gapless superconductors.

研究了具有(pi)相位差的线性超导体-正态超导体(SNS) Josephson结中二维电子气(2DEG)的费米表面拓扑结构。由于节点准粒子和各向异性间隙,d波情况与各向同性s波情况在性质上有所不同:非局域电导不再直接与费米表面上临界点的数量联系在一起。相反,我们表明整流电导在低偏置下保持量子化,并通过欧拉数(chi _F)忠实地编码费米表面拓扑。这种量化响应即使在复杂或多袋费米表面也存在,将整流电导建立为无间隙超导体中费米表面拓扑结构的鲁棒性和实验可达探头。
{"title":"Quantized Rectified Conductance as a Probe of Fermi Sea Topology in D-Wave Superconductors","authors":"Hongyu Tian,&nbsp;Yuqiao Ren","doi":"10.1007/s10948-025-07126-z","DOIUrl":"10.1007/s10948-025-07126-z","url":null,"abstract":"<div><p>We study the Fermi surface topology of a two-dimensional electron gas (2DEG) proximitized by <i>d</i>-wave superconductors in a linear superconductor–normal–superconductor (SNS) Josephson junction with a <span>(pi)</span> phase difference. Owing to nodal quasiparticles and the anisotropic gap, the <i>d</i>-wave case differs qualitatively from the isotropic <i>s</i>-wave case: the nonlocal conductance is no longer directly tied to the number of critical points on the Fermi surface. Instead, we show that the rectified conductance remains quantized at low bias and faithfully encodes the Fermi surface topology via the Euler number <span>(chi _F)</span>. This quantized response persists even for complex or multi-pocket Fermi surfaces, establishing rectified conductance as a robust and experimentally accessible probe of Fermi surface topology in gapless superconductors.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Performance Kilometer-Length Bi2212 HTS Round Wires: Towards Industrial-Scale Manufacturing 高性能公里长Bi2212高温超导圆线:迈向工业规模制造
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-06 DOI: 10.1007/s10948-025-07125-0
Qingbin Hao, Xiaoyan Xu, Chengshan Li, Gaofeng Jiao, Guoqing Liu, Kai Yao, Jialin Jia, Shengnan Zhang, Jianfeng Li, Pingxiang Zhang

This work addresses the two major bottlenecks hindering the application of Bi2212 high-temperature superconducting round wires: the high technical barrier of the required heat treatment and its prohibitive cost. Our team has broken the heat-treatment bottleneck by independently developing a series of high-pressure heat treatment (HPHT) systems, which are capable of processing coils with bore sizes up to 20 cm and have provided sintering services to multiple research institutions. Concurrently, we have established a full-chain batch fabrication process from precursor powder to coil sintering. We have achieved batch production of Bi2212 wires with single lengths exceeding 1000 m and an annual capacity of 200 km. These wires exhibit a critical current (Ic) ≥ 496 A at 4.2 K and 12 T, and a hysteresis loss as low as 589 mJ/cm³, approaching the ITER standard. For cabling compatibility, strands extracted from cables retained 87.9% to 95.7% of their critical current after bending and straightening. The production scale-up has drastically reduced costs, and these wires have been successfully validated in small coils, Bi2212 CICC conductors, and D-shaped coils, thereby effectively mitigating the two initial challenges and laying a solid foundation for the large-scale application of Bi2212. ✉ Qingbin Hao. HaoQB@c-nin.com. Shengnan Zhang. snzhang@c-nin.com. 1. Superconducting Materials Research Center, Northwest Institute for Non-ferrous Metal Research, Xi’an 710,016, People’s Republic of China. 2. Western Superconducting Technologies Co., Ltd, Xi’an 710,018, People’s Republic of China.

这项工作解决了阻碍Bi2212高温超导圆线应用的两个主要瓶颈:所需热处理的高技术障碍及其过高的成本。我们的团队通过独立开发一系列高压热处理(HPHT)系统打破了热处理瓶颈,这些系统能够处理直径达20厘米的线圈,并为多个研究机构提供烧结服务。同时,我们建立了从前驱体粉末到线圈烧结的全链批量制造工艺。实现了单根长度超过1000米的Bi2212线的批量生产,年生产能力达到200公里。这些导线在4.2 K和12 T下的临界电流(Ic)≥496 a,迟滞损耗低至589 mJ/cm³,接近ITER标准。为了电缆的兼容性,从电缆中提取的股在弯曲和矫直后保留了临界电流的87.9%至95.7%。生产规模的扩大大大降低了成本,这些导线已经成功地在小线圈、Bi2212 CICC导体和d形线圈中进行了验证,从而有效地缓解了最初的两个挑战,为Bi2212的大规模应用奠定了坚实的基础。郝庆斌。HaoQB@c-nin.com。暴增。snzhang@c-nin.com。1. 1 .西北有色金属研究院超导材料研究中心,西安710016;西部超导科技有限公司,西安710018
{"title":"High-Performance Kilometer-Length Bi2212 HTS Round Wires: Towards Industrial-Scale Manufacturing","authors":"Qingbin Hao,&nbsp;Xiaoyan Xu,&nbsp;Chengshan Li,&nbsp;Gaofeng Jiao,&nbsp;Guoqing Liu,&nbsp;Kai Yao,&nbsp;Jialin Jia,&nbsp;Shengnan Zhang,&nbsp;Jianfeng Li,&nbsp;Pingxiang Zhang","doi":"10.1007/s10948-025-07125-0","DOIUrl":"10.1007/s10948-025-07125-0","url":null,"abstract":"<div><p>This work addresses the two major bottlenecks hindering the application of Bi2212 high-temperature superconducting round wires: the high technical barrier of the required heat treatment and its prohibitive cost. Our team has broken the heat-treatment bottleneck by independently developing a series of high-pressure heat treatment (HPHT) systems, which are capable of processing coils with bore sizes up to 20 cm and have provided sintering services to multiple research institutions. Concurrently, we have established a full-chain batch fabrication process from precursor powder to coil sintering. We have achieved batch production of Bi2212 wires with single lengths exceeding 1000 m and an annual capacity of 200 km. These wires exhibit a critical current (<i>I</i><sub>c</sub>) ≥ 496 A at 4.2 K and 12 T, and a hysteresis loss as low as 589 mJ/cm³, approaching the ITER standard. For cabling compatibility, strands extracted from cables retained 87.9% to 95.7% of their critical current after bending and straightening. The production scale-up has drastically reduced costs, and these wires have been successfully validated in small coils, Bi2212 CICC conductors, and D-shaped coils, thereby effectively mitigating the two initial challenges and laying a solid foundation for the large-scale application of Bi2212. ✉ Qingbin Hao. HaoQB@c-nin.com. Shengnan Zhang. snzhang@c-nin.com. 1. Superconducting Materials Research Center, Northwest Institute for Non-ferrous Metal Research, Xi’an 710,016, People’s Republic of China. 2. Western Superconducting Technologies Co., Ltd, Xi’an 710,018, People’s Republic of China.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic Structure and Magnetic Behavior of 3 d Transition-Metal Doped ZnI₂ Monolayer 三维过渡金属掺杂ZnI 2单层膜的电子结构和磁性行为
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-05 DOI: 10.1007/s10948-025-07099-z
M. Merdan, Hamad Rahman Jappor, Ali Obies Muhsen Almayyali, Hikmat A. Banimuslem

This paper reports a first-principles study on structural, electronic, and magnetic properties of the ZnI₂ monolayers doped with 3d transition-metal (TM) atoms (from Sc to Cu). We investigate the effect of TM substitution on the electronic band structure, density of state, spin polarization, magnetic moment, and charge distribution using spin-polarized density functional theory within the generalized gradient approximation (GGA). The pristine ZnI₂ monolayer is confirmed to be a non-magnetic indirect semiconductor with a band gap of 2.002 eV. We find that the TM doping of ZnI2 can result in various electronic properties: Sc-doping yields a nearly semimetallic gap (0.006 eV), Ti- and Co-doping produce spin-polarized semiconductors with gaps of 0.210 eV and 0.296 eV, respectively; Cr-, Fe-, and Cu-doped systems exhibit half-metallic behavior with band gaps of 0.0006 eV, 0.0014 eV, and 0.0022 eV, respectively. V-, Mn-, and Ni-doped systems lead to bipolar magnetic semiconductors with total gaps of 0.8584 eV, 1.4865 eV, and 0.8407 eV, respectively. The computed magnetic moments increase from 0.89(::{mu:}_{B}) (Sc) to 5.00 (:{mu:}_{B}) (Mn) and then decrease towards 1.00 (:{mu:}_{B}) (Cu) as the 3d orbitals are filled. Overall, these results show a clear and progressive evolution in the system’s behavior from semimetallic to spin-polarized semiconducting, bipolar magnetic semiconducting, and finally half-metallic states, reflecting how the 3d orbital filling systematically modifies the electronic and magnetic characteristics of the ZnI₂ lattice. The spin density indicates the localized or delocalized magnetic behavior of the dopant, and the charge analysis confirms the partial electron transfer, which is related to the occupation of the d-orbital. Such tunable changes in the magnetic and electronic states suggest that 3d transition-metal doping offers a practical pathway to engineer ZnI₂ monolayers for spintronic and magneto-electronic applications.

本文报道了掺杂三维过渡金属(从Sc到Cu)原子的zni2单层的结构、电子和磁性能的第一性原理研究。利用广义梯度近似(GGA)中的自旋极化密度泛函理论,研究了TM取代对电子能带结构、态密度、自旋极化、磁矩和电荷分布的影响。原始的ZnI 2单层被证实为非磁性间接半导体,带隙为2.002 eV。我们发现,TM掺杂可以产生多种电子性质:sc掺杂产生近半金属间隙(0.006 eV), Ti掺杂和共掺杂产生自旋极化半导体,其间隙分别为0.210 eV和0.296 eV;Cr、Fe和cu掺杂体系表现出半金属行为,带隙分别为0.0006 eV、0.0014 eV和0.0022 eV。V掺杂、Mn掺杂和ni掺杂制得双极磁性半导体,总间隙分别为0.8584 eV、1.4865 eV和0.8407 eV。随着三维轨道的填充,计算得到的磁矩从0.89 (::{mu:}_{B}) (Sc)增加到5.00 (:{mu:}_{B}) (Mn),然后减小到1.00 (:{mu:}_{B}) (Cu)。总的来说,这些结果显示了系统行为从半金属到自旋极化半导体,双极磁性半导体,最后半金属状态的清晰渐进演变,反映了三维轨道填充如何系统地改变ZnI 2晶格的电子和磁性特征。自旋密度表明掺杂剂的局域或非局域磁性行为,电荷分析证实了部分电子转移,这与占据d轨道有关。磁性和电子态的这种可调变化表明,3d过渡金属掺杂为设计用于自旋电子和磁电子应用的ZnI 2单层提供了一条实用途径。
{"title":"Electronic Structure and Magnetic Behavior of 3 d Transition-Metal Doped ZnI₂ Monolayer","authors":"M. Merdan,&nbsp;Hamad Rahman Jappor,&nbsp;Ali Obies Muhsen Almayyali,&nbsp;Hikmat A. Banimuslem","doi":"10.1007/s10948-025-07099-z","DOIUrl":"10.1007/s10948-025-07099-z","url":null,"abstract":"<div><p>This paper reports a first-principles study on structural, electronic, and magnetic properties of the ZnI₂ monolayers doped with 3d transition-metal (TM) atoms (from Sc to Cu). We investigate the effect of TM substitution on the electronic band structure, density of state, spin polarization, magnetic moment, and charge distribution using spin-polarized density functional theory within the generalized gradient approximation (GGA). The pristine ZnI₂ monolayer is confirmed to be a non-magnetic indirect semiconductor with a band gap of 2.002 eV. We find that the TM doping of ZnI2 can result in various electronic properties: Sc-doping yields a nearly semimetallic gap (0.006 eV), Ti- and Co-doping produce spin-polarized semiconductors with gaps of 0.210 eV and 0.296 eV, respectively; Cr-, Fe-, and Cu-doped systems exhibit half-metallic behavior with band gaps of 0.0006 eV, 0.0014 eV, and 0.0022 eV, respectively. V-, Mn-, and Ni-doped systems lead to bipolar magnetic semiconductors with total gaps of 0.8584 eV, 1.4865 eV, and 0.8407 eV, respectively. The computed magnetic moments increase from 0.89<span>(::{mu:}_{B})</span> (Sc) to 5.00 <span>(:{mu:}_{B})</span> (Mn) and then decrease towards 1.00 <span>(:{mu:}_{B})</span> (Cu) as the 3d orbitals are filled. Overall, these results show a clear and progressive evolution in the system’s behavior from semimetallic to spin-polarized semiconducting, bipolar magnetic semiconducting, and finally half-metallic states, reflecting how the 3d orbital filling systematically modifies the electronic and magnetic characteristics of the ZnI₂ lattice. The spin density indicates the localized or delocalized magnetic behavior of the dopant, and the charge analysis confirms the partial electron transfer, which is related to the occupation of the d-orbital. Such tunable changes in the magnetic and electronic states suggest that 3d transition-metal doping offers a practical pathway to engineer ZnI₂ monolayers for spintronic and magneto-electronic applications.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The FMR Response of Nickel Magnonic Crystals Modulated by the Individual Element Shape 单个元件形状调制镍磁晶体的FMR响应
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-04 DOI: 10.1007/s10948-025-07129-w
D. M. Oliveira, S. Castro-Lopes, J. E. Abrão, J. F. O. da Silva, A. S. Carvalho, E. L. T. França, E. Padrón-Hernández

The ferromagnetic resonance (FMR) behavior of patterned nickel magnonic crystals is shown to be strongly governed by the geometry and thickness of the individual nanostructures. Arrays of square, triangular, and circular nanopillars fabricated by electron beam lithography exhibit a clear inversion in the resonance field order between in-plane (S2 > S1 > S3) and out-of-plane (S2 < S3 < S1) configurations. This inversion arises from the interplay between shape-induced anisotropy and thickness-related dimensional effects. Micromagnetic simulations corroborate the experimental findings, revealing how the dipolar field distribution and edge curvature modulate local magnetization dynamics. The results establish geometry as an efficient tuning parameter for FMR responses in magnonic systems, opening new pathways for the design of spintronic components and high-frequency magnetic devices based on controlled anisotropy engineering.

图像化镍磁晶体的铁磁共振(FMR)行为受到单个纳米结构的几何形状和厚度的强烈支配。电子束光刻技术制备的正方形、三角形和圆形纳米柱阵列在面内(S2 > S1 > S3)和面外(S2 < S3 < S1)构型之间的共振场顺序明显相反。这种反转是由形状诱导的各向异性和厚度相关的尺寸效应之间的相互作用引起的。微磁模拟证实了实验结果,揭示了偶极场分布和边缘曲率如何调节局部磁化动力学。研究结果确立了几何结构作为磁振系统FMR响应的有效调谐参数,为基于可控各向异性工程的自旋电子元件和高频磁器件的设计开辟了新的途径。
{"title":"The FMR Response of Nickel Magnonic Crystals Modulated by the Individual Element Shape","authors":"D. M. Oliveira,&nbsp;S. Castro-Lopes,&nbsp;J. E. Abrão,&nbsp;J. F. O. da Silva,&nbsp;A. S. Carvalho,&nbsp;E. L. T. França,&nbsp;E. Padrón-Hernández","doi":"10.1007/s10948-025-07129-w","DOIUrl":"10.1007/s10948-025-07129-w","url":null,"abstract":"<div><p>The ferromagnetic resonance (FMR) behavior of patterned nickel magnonic crystals is shown to be strongly governed by the geometry and thickness of the individual nanostructures. Arrays of square, triangular, and circular nanopillars fabricated by electron beam lithography exhibit a clear inversion in the resonance field order between in-plane (S2 &gt; S1 &gt; S3) and out-of-plane (S2 &lt; S3 &lt; S1) configurations. This inversion arises from the interplay between shape-induced anisotropy and thickness-related dimensional effects. Micromagnetic simulations corroborate the experimental findings, revealing how the dipolar field distribution and edge curvature modulate local magnetization dynamics. The results establish geometry as an efficient tuning parameter for FMR responses in magnonic systems, opening new pathways for the design of spintronic components and high-frequency magnetic devices based on controlled anisotropy engineering.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning Garnet Properties: The Role of Cr Substitution in Sm3Fe5O12 调整石榴石性质:Cr取代在Sm3Fe5O12中的作用
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-04 DOI: 10.1007/s10948-025-07107-2
Shalini Verma, S. Ravi

The structural, magnetic, and dielectric properties of Cr-substituted samarium iron garnet ((S{m}_{3}:F{e}_{5-x}:C{r}_{x}:{O}_{12},:x:=:0.0-0.5)) were systematically investigated to understand the impact of Cr incorporation on the garnet framework. X-ray diffraction analysis confirmed single-phase cubic garnet formation, accompanied by a gradual reduction in lattice parameter and grain size with increasing Cr content. Magnetic measurements revealed two characteristic spin-reorientation transitions in the parent compound, both of which became progressively suppressed upon Cr substitution due to the weakening of (Feleft(aright)-O-Feleft(dright)) superexchange interactions. A consistent decrease in magnetization was observed as magnetic (Fe^{3+}) ions were replaced by lower-moment (Cr^{3+}) ions. Impedance spectroscopy demonstrated clear dielectric relaxation behavior, with relaxation peaks shifting toward higher frequencies for Cr-doped samples that indicates reduced relaxation time and enhanced charge transport. Overall, Cr substitution effectively tunes the magnetic ordering, microstructure, and dielectric response of SmIG, highlighting its potential for multifunctional magneto-dielectric and high-frequency device applications.

系统地研究了Cr取代钐铁石榴石((S{m}_{3}:F{e}_{5-x}:C{r}_{x}:{O}_{12},:x:=:0.0-0.5))的结构、磁性和介电性能,以了解Cr掺入对石榴石骨架的影响。x射线衍射分析证实形成了单相立方石榴石,随着Cr含量的增加,晶格参数和晶粒尺寸逐渐减小。磁测量显示,在母体化合物中有两个特征的自旋重取向转变,由于(Feleft(aright)-O-Feleft(dright))超交换相互作用的减弱,这两个转变在Cr取代后逐渐被抑制。当磁性(Fe^{3+})离子被低矩(Cr^{3+})离子取代时,观察到磁化强度的持续下降。阻抗谱显示了清晰的介电弛豫行为,掺铬样品的弛豫峰向更高频率移动,表明弛豫时间缩短,电荷输运增强。总的来说,Cr取代有效地调整了SmIG的磁有序、微观结构和介电响应,突出了其在多功能磁介电和高频器件应用中的潜力。
{"title":"Tuning Garnet Properties: The Role of Cr Substitution in Sm3Fe5O12","authors":"Shalini Verma,&nbsp;S. Ravi","doi":"10.1007/s10948-025-07107-2","DOIUrl":"10.1007/s10948-025-07107-2","url":null,"abstract":"<div>\u0000 \u0000 <p>The structural, magnetic, and dielectric properties of Cr-substituted samarium iron garnet <span>((S{m}_{3}:F{e}_{5-x}:C{r}_{x}:{O}_{12},:x:=:0.0-0.5))</span> were systematically investigated to understand the impact of Cr incorporation on the garnet framework. X-ray diffraction analysis confirmed single-phase cubic garnet formation, accompanied by a gradual reduction in lattice parameter and grain size with increasing Cr content. Magnetic measurements revealed two characteristic spin-reorientation transitions in the parent compound, both of which became progressively suppressed upon Cr substitution due to the weakening of <span>(Feleft(aright)-O-Feleft(dright))</span> superexchange interactions. A consistent decrease in magnetization was observed as magnetic <span>(Fe^{3+})</span> ions were replaced by lower-moment <span>(Cr^{3+})</span> ions. Impedance spectroscopy demonstrated clear dielectric relaxation behavior, with relaxation peaks shifting toward higher frequencies for Cr-doped samples that indicates reduced relaxation time and enhanced charge transport. Overall, Cr substitution effectively tunes the magnetic ordering, microstructure, and dielectric response of SmIG, highlighting its potential for multifunctional magneto-dielectric and high-frequency device applications.</p>\u0000 </div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defect-Mediated Ferromagnetism and Visible-Light Bandgap Narrowing in Fe-Substituted BaSnO3 铁取代BaSnO3中缺陷介导的铁磁性和可见光带隙缩小
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-04 DOI: 10.1007/s10948-025-07124-1
S. Sumithra, S. Namagal, M. Jayavel, P. N. Poovizhi

This study investigates the role of Fe dopant induced defects in tailoring the physicochemical and functional properties of hydrothermally synthesized BaSnO3 (BSO) nanostructures. XRD and Raman analyses confirmed the successful incorporation of Fe into the cubic perovskite lattice without the formation of secondary phases. The FTIR spectra further revealed distinct vibrational bands corresponding to Ba–O and Sn–O stretching modes, substantiating the chemical bonding and integrity of the perovskite framework. Morphological analysis showed irregular rod-like nanostructures, indicative of dopant-driven growth modifications. Optical studies revealed Fe-induced modulation of the electronic band structure, resulting in measurable band gap reduction and enhanced defect-related visible emissions in the photoluminescence spectra. Magnetic characterization demonstrated robust room-temperature ferromagnetism in all Fe-doped samples, with M–H loop analysis and ESR measurements confirming oxygen-vacancy–mediated exchange interactions as the origin of magnetization. These findings establish Fe-doped BSO as a multifunctional material that simultaneously exhibits tunable optical band gaps, defect-driven luminescence, and stable ferromagnetism, underscoring its potential for application in dilute magnetic semiconductor–based spintronic and optoelectronic devices.

本研究探讨了铁掺杂诱导的缺陷在水热合成BaSnO3 (BSO)纳米结构的物理化学和功能特性中的作用。XRD和拉曼分析证实了铁成功地结合到立方钙钛矿晶格中,没有形成二次相。FTIR光谱进一步揭示了Ba-O和Sn-O拉伸模式对应的不同振动带,证实了钙钛矿框架的化学键合和完整性。形态学分析显示不规则的棒状纳米结构,表明掺杂剂驱动的生长修饰。光学研究揭示了铁诱导的电子能带结构调制,导致可测量的带隙减小和光致发光光谱中与缺陷相关的可见发射增强。磁性表征表明,所有掺铁样品具有强大的室温铁磁性,M-H环分析和ESR测量证实了氧空位介导的交换相互作用是磁化的来源。这些发现确立了铁掺杂BSO作为一种多功能材料,同时具有可调谐的光学带隙、缺陷驱动发光和稳定的铁磁性,强调了其在稀磁半导体自旋电子和光电子器件中的应用潜力。
{"title":"Defect-Mediated Ferromagnetism and Visible-Light Bandgap Narrowing in Fe-Substituted BaSnO3","authors":"S. Sumithra,&nbsp;S. Namagal,&nbsp;M. Jayavel,&nbsp;P. N. Poovizhi","doi":"10.1007/s10948-025-07124-1","DOIUrl":"10.1007/s10948-025-07124-1","url":null,"abstract":"<div><p>This study investigates the role of Fe dopant induced defects in tailoring the physicochemical and functional properties of hydrothermally synthesized BaSnO<sub>3</sub> (BSO) nanostructures. XRD and Raman analyses confirmed the successful incorporation of Fe into the cubic perovskite lattice without the formation of secondary phases. The FTIR spectra further revealed distinct vibrational bands corresponding to Ba–O and Sn–O stretching modes, substantiating the chemical bonding and integrity of the perovskite framework. Morphological analysis showed irregular rod-like nanostructures, indicative of dopant-driven growth modifications. Optical studies revealed Fe-induced modulation of the electronic band structure, resulting in measurable band gap reduction and enhanced defect-related visible emissions in the photoluminescence spectra. Magnetic characterization demonstrated robust room-temperature ferromagnetism in all Fe-doped samples, with M–H loop analysis and ESR measurements confirming oxygen-vacancy–mediated exchange interactions as the origin of magnetization. These findings establish Fe-doped BSO as a multifunctional material that simultaneously exhibits tunable optical band gaps, defect-driven luminescence, and stable ferromagnetism, underscoring its potential for application in dilute magnetic semiconductor–based spintronic and optoelectronic devices.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First-principles Study of the Optical and Spin Properties of SnS₂/MoS₂ Heterostructures Induced by Transition Metal Doping 过渡金属掺杂诱导的SnS₂/MoS₂异质结构光学和自旋性质的第一性原理研究
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-04 DOI: 10.1007/s10948-025-07123-2
Tong Yuan, Guili Liu, Guoying Zhang

Two-dimensional heterostructures have become a research focus in materials science, driven by their flexible and adjustable electronic, magnetic, and optical characteristics. As materials with significant potential for optoelectronic and spintronic devices, they exhibit a wide range of application prospects. However, the inherent non-magnetic properties of the SnS2/MoS2 heterostructure pose a significant constraint on its potential applications within the realm of spintronics. Therefore, the incorporation of transition metals to impart magnetism is crucial for further expanding the boundaries of spintronic applications. In the present study, we employed first-principles calculations to conduct an in-depth analysis of the photoelectric and magnetic properties of TM/SnS2/MoS2 heterostructures, where transition metal (TM = Mn, Fe, Co, Ni, Cu) atoms replace Sn atoms in the heterostructure. The results of the study are as follows: when doped with Mn and Co, the SnS2/MoS2 heterostructure exhibits half-metallic properties; when doped with Fe and Cu, it shows characteristics of a magnetic semiconductor; and when doped with Ni, it behaves as a non-magnetic semiconductor. Additionally, the doping of transition metals increases the static dielectric constant and results in the light absorption edge shifting toward longer wavelengths, a phenomenon known as redshift. Therefore, transition metal doping is shown to effectively regulate both the optoelectronic and spintronic characteristics of the SnS₂/MoS₂ heterostructure. The theoretical insights derived from this study lay a foundational framework for the practical deployment of TM/SnS₂/MoS₂ heterostructures in optoelectronic and spintronic technologies, indicating that such heterostructures are promising candidates for high-quality spintronic and optoelectronic devices.

二维异质结构由于其柔性和可调的电子、磁性和光学特性而成为材料科学研究的热点。作为光电子和自旋电子器件中具有重要潜力的材料,它们具有广泛的应用前景。然而,SnS2/MoS2异质结构固有的非磁性对其在自旋电子学领域的潜在应用构成了重大限制。因此,结合过渡金属来传递磁性对于进一步扩展自旋电子应用的边界至关重要。在本研究中,我们采用第一性原理计算对TM/SnS2/MoS2异质结构中过渡金属(TM = Mn, Fe, Co, Ni, Cu)原子取代Sn原子的光电和磁性进行了深入分析。研究结果表明:当掺杂Mn和Co时,SnS2/MoS2异质结构呈现半金属性质;当掺杂Fe和Cu时,表现出磁性半导体的特性;当掺杂Ni时,它表现为非磁性半导体。此外,过渡金属的掺杂增加了静态介电常数,并导致光吸收边缘向更长的波长移动,这种现象被称为红移。因此,过渡金属掺杂可以有效地调节SnS₂/MoS₂异质结构的光电和自旋电子特性。本研究得出的理论见解为TM/SnS₂/MoS₂异质结构在光电和自旋电子技术中的实际应用奠定了基础框架,表明这种异质结构是高质量自旋电子和光电子器件的有希望的候选材料。
{"title":"First-principles Study of the Optical and Spin Properties of SnS₂/MoS₂ Heterostructures Induced by Transition Metal Doping","authors":"Tong Yuan,&nbsp;Guili Liu,&nbsp;Guoying Zhang","doi":"10.1007/s10948-025-07123-2","DOIUrl":"10.1007/s10948-025-07123-2","url":null,"abstract":"<div><p>Two-dimensional heterostructures have become a research focus in materials science, driven by their flexible and adjustable electronic, magnetic, and optical characteristics. As materials with significant potential for optoelectronic and spintronic devices, they exhibit a wide range of application prospects. However, the inherent non-magnetic properties of the SnS<sub>2</sub>/MoS<sub>2</sub> heterostructure pose a significant constraint on its potential applications within the realm of spintronics. Therefore, the incorporation of transition metals to impart magnetism is crucial for further expanding the boundaries of spintronic applications. In the present study, we employed first-principles calculations to conduct an in-depth analysis of the photoelectric and magnetic properties of TM/SnS<sub>2</sub>/MoS<sub>2</sub> heterostructures, where transition metal (TM = Mn, Fe, Co, Ni, Cu) atoms replace Sn atoms in the heterostructure. The results of the study are as follows: when doped with Mn and Co, the SnS<sub>2</sub>/MoS<sub>2</sub> heterostructure exhibits half-metallic properties; when doped with Fe and Cu, it shows characteristics of a magnetic semiconductor; and when doped with Ni, it behaves as a non-magnetic semiconductor. Additionally, the doping of transition metals increases the static dielectric constant and results in the light absorption edge shifting toward longer wavelengths, a phenomenon known as redshift. Therefore, transition metal doping is shown to effectively regulate both the optoelectronic and spintronic characteristics of the SnS₂/MoS₂ heterostructure. The theoretical insights derived from this study lay a foundational framework for the practical deployment of TM/SnS₂/MoS₂ heterostructures in optoelectronic and spintronic technologies, indicating that such heterostructures are promising candidates for high-quality spintronic and optoelectronic devices.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the Drawing Angle in Drawing of Bi-2223/Ag HTS Wire 拉拔角度对Bi-2223/Ag高温超导丝拉拔的影响
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2026-01-03 DOI: 10.1007/s10948-025-07109-0
Xiaobo Ma, Shengnan Zhang, Lihua Jin, Baitao Shao, Xiaoyan Xu, Jianfeng Li

Mono-filamentary and 37-filamentary Bi2Sr2Ca2Cu3O10+δ (Bi-2223) superconducting tapes were prepared by the powder-in-tube (PIT) technique. In order to improve the engineering current density (Je) of the Bi-2223 tape, we tailored the silver/superconductor ratio (Ag/Sc ratio), filaments adhesion and Ag/superconducting interface of the Bi-2223 tapes. The influence of drawing angles (6° & 14°) during the Bi-2223 wire drawing was systematically studied to optimize wire uniformity. It was found that 37-filamentary Bi-2223/Ag wires with a 6° drawing angle didn't merged when the wire diameter reached 1.51 mm. Additionally, the filament area uniformity of wires prepared with a 6° drawing angle was superior to that of wires with a 14° drawing angle. Furthermore, the smaller 6° drawing angle significantly enhanced the filament density of Bi-2223 green wires, thereby affecting the Bi-2223 phase formation rate. Owning to increase of filament density and improvement Ag/superconducting core interface, the critical current density (Jc) value increase from 23.6 kA/cm2 to 27.1 kA/cm2.

采用管内粉末(PIT)技术制备了单丝和37丝Bi2Sr2Ca2Cu3O10+δ (Bi-2223)超导带。为了提高Bi-2223带的工程电流密度(Je),我们对Bi-2223带的银/超导比(Ag/Sc比)、细丝附着力和银/超导界面进行了定制。系统研究了拉拔角度(6°和14°)对Bi-2223拉丝过程的影响,以优化拉丝均匀性。结果表明,当线径达到1.51 mm时,6°拉丝角的37丝Bi-2223/Ag线不合并。此外,6°拉伸角制备的丝材面积均匀性优于14°拉伸角制备的丝材。此外,较小的6°拉伸角显著提高了Bi-2223绿丝的丝密度,从而影响了Bi-2223相的形成速率。由于纤维密度的增加和Ag/超导磁芯界面的改善,临界电流密度(Jc)值从23.6 kA/cm2增加到27.1 kA/cm2。
{"title":"Influence of the Drawing Angle in Drawing of Bi-2223/Ag HTS Wire","authors":"Xiaobo Ma,&nbsp;Shengnan Zhang,&nbsp;Lihua Jin,&nbsp;Baitao Shao,&nbsp;Xiaoyan Xu,&nbsp;Jianfeng Li","doi":"10.1007/s10948-025-07109-0","DOIUrl":"10.1007/s10948-025-07109-0","url":null,"abstract":"<div><p>Mono-filamentary and 37-filamentary Bi<sub>2</sub>Sr<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>10+<i>δ</i></sub> (Bi-2223) superconducting tapes were prepared by the powder-in-tube (PIT) technique. In order to improve the engineering current density (<i>J</i><sub>e</sub>) of the Bi-2223 tape, we tailored the silver/superconductor ratio (Ag/S<sub>c</sub> ratio), filaments adhesion and Ag/superconducting interface of the Bi-2223 tapes. The influence of drawing angles (6° &amp; 14°) during the Bi-2223 wire drawing was systematically studied to optimize wire uniformity. It was found that 37-filamentary Bi-2223/Ag wires with a 6° drawing angle didn't merged when the wire diameter reached 1.51 mm. Additionally, the filament area uniformity of wires prepared with a 6° drawing angle was superior to that of wires with a 14° drawing angle. Furthermore, the smaller 6° drawing angle significantly enhanced the filament density of Bi-2223 green wires, thereby affecting the Bi-2223 phase formation rate. Owning to increase of filament density and improvement Ag/superconducting core interface, the critical current density (<i>J</i><sub>c</sub>) value increase from 23.6 kA/cm<sup>2</sup> to 27.1 kA/cm<sup>2</sup>.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145886889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Disorder-controlled Superconducting Properties in thin Molybdenum-Rhenium Films 钼铼薄膜的无序控制超导特性
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2025-12-26 DOI: 10.1007/s10948-025-07113-4
I. N. Pavlov, A. I. Lomakin, S. S. Svyatodukh, N. A. Titova, K. I. Khilay, E. M. Baeva, A. I. Kolbatova, G. N. Goltsman

This study investigates the superconducting properties of MoRe films deposited by DC magnetron sputtering with a composite target consisting of 56 at.% Mo and 44 at.% Re on sapphire substrates at room temperature. All films are passivated with a silicon capping layer. The focus of this study is on the thickness dependence of the critical temperature (T_textrm{c}(d)). The electrical transport measurements show a direct correlation between (T_textrm{c}) and disorder, quantified by the Ioffe-Regel parameter, (k_Fl). The parameter ranges from 6 for 3 nm films to 20 for 100 nm, while (T_textrm{c}) varies from 6 K to 8.4 K, respectively. The analysis suggests that the films exhibit a moderate level of disorder, and the (T_textrm{c}(d)) dependence can be explained by a fermionic mechanism related to (k_Fl) rather than the sheet resistance of the film, (R_s).

本文研究了以56 at为复合靶材的直流磁控溅射制备的MoRe薄膜的超导性能。% Mo and 44 at.% Re on sapphire substrates at room temperature. All films are passivated with a silicon capping layer. The focus of this study is on the thickness dependence of the critical temperature (T_textrm{c}(d)). The electrical transport measurements show a direct correlation between (T_textrm{c}) and disorder, quantified by the Ioffe-Regel parameter, (k_Fl). The parameter ranges from 6 for 3 nm films to 20 for 100 nm, while (T_textrm{c}) varies from 6 K to 8.4 K, respectively. The analysis suggests that the films exhibit a moderate level of disorder, and the (T_textrm{c}(d)) dependence can be explained by a fermionic mechanism related to (k_Fl) rather than the sheet resistance of the film, (R_s).
{"title":"Disorder-controlled Superconducting Properties in thin Molybdenum-Rhenium Films","authors":"I. N. Pavlov,&nbsp;A. I. Lomakin,&nbsp;S. S. Svyatodukh,&nbsp;N. A. Titova,&nbsp;K. I. Khilay,&nbsp;E. M. Baeva,&nbsp;A. I. Kolbatova,&nbsp;G. N. Goltsman","doi":"10.1007/s10948-025-07113-4","DOIUrl":"10.1007/s10948-025-07113-4","url":null,"abstract":"<div><p>This study investigates the superconducting properties of MoRe films deposited by DC magnetron sputtering with a composite target consisting of 56 at.% Mo and 44 at.% Re on sapphire substrates at room temperature. All films are passivated with a silicon capping layer. The focus of this study is on the thickness dependence of the critical temperature <span>(T_textrm{c}(d))</span>. The electrical transport measurements show a direct correlation between <span>(T_textrm{c})</span> and disorder, quantified by the Ioffe-Regel parameter, <span>(k_Fl)</span>. The parameter ranges from 6 for 3 nm films to 20 for 100 nm, while <span>(T_textrm{c})</span> varies from 6 K to 8.4 K, respectively. The analysis suggests that the films exhibit a moderate level of disorder, and the <span>(T_textrm{c}(d))</span> dependence can be explained by a fermionic mechanism related to <span>(k_Fl)</span> rather than the sheet resistance of the film, <span>(R_s)</span>.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145831035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Decoupling Perpendicular Anisotropy and Dzyaloshinskii-Moriya Interaction in Ultrathin Ferromagnets by Defocused Ga⁺ Ion Beam Irradiation 离焦Ga +离子束辐照超薄铁磁体中垂直各向异性解耦和Dzyaloshinskii-Moriya相互作用
IF 1.7 4区 物理与天体物理 Q3 PHYSICS, APPLIED Pub Date : 2025-12-26 DOI: 10.1007/s10948-025-07114-3
A.V. Ognev, A. Yu. Samardak, A.G. Kolesnikov, M.A. Bazrov, A.V. Davydenko, E.V. Pustovalov, A.A. Pervishko, D. Yudin, A.V. Sadovnikov, S.A. Nikitov,  C.H. Wan, X.F. Han, A.S. Samardak

The precise and local manipulation of perpendicular magnetic anisotropy (PMA) and the interfacial Dzyaloshinskii-Moriya interaction (iDMI) is paramount for the development of skyrmion-based spintronic devices. While light-ion irradiation has been explored for magnetic property modification, the use of heavy ions offers a pathway for enhanced interfacial intermixing and potentially decoupled control of these key parameters. Here, we demonstrate that defocused Ga⁺ ion beam irradiation acts as a powerful tool for the graded, local tuning of magnetic properties in Ru/Co/W/Ru multilayers. We achieve a continuous transformation of the magnetic domain structure, from labyrinthine stripes to isolated sub-micrometer skyrmion bubbles, by selectively varying the irradiation fluence. Crucially, we find that PMA and iDMI exhibit distinct degradation rates upon irradiation, with the anisotropy energy decreasing fourfold while the iDMI strength is halved, enabling a widened window for skyrmion stabilization. Micromagnetic simulations, calibrated with experimental parameters, confirm the formation of nanoscale skyrmions (~ 130 nm) at high fluences where direct optical observation is limited. Combined experimental characterization and first-principles calculations reveal that this decoupling stems from Ga⁺-induced interfacial alloying, which disproportionately affects the interface-sensitive origins of PMA and iDMI. This work establishes defocused ion beam irradiation as a versatile nanofabrication technique for designing two-dimensional magnetic metasurfaces and prototype race-track memory devices.

垂直磁各向异性(PMA)和界面Dzyaloshinskii-Moriya相互作用(iDMI)的精确和局部控制对于skyrmion基自旋电子器件的开发至关重要。虽然已经探索了光离子辐照用于磁性改性,但使用重离子为增强界面混合和潜在的解耦控制这些关键参数提供了途径。在这里,我们证明了散焦的Ga +离子束辐照是Ru/Co/W/Ru多层材料中磁性的梯度局部调谐的有力工具。通过选择性地改变辐照强度,我们实现了磁畴结构的连续转变,从迷宫式条纹到孤立的亚微米skyrmion气泡。重要的是,我们发现PMA和iDMI在辐照下表现出不同的降解率,各向异性能量降低了四倍,而iDMI强度减半,从而扩大了天空粒子稳定的窗口。用实验参数校准的微磁模拟证实,在直接光学观测有限的高影响下,纳米尺度天空粒子(~ 130 nm)的形成。结合实验表征和第一性原理计算表明,这种解耦源于Ga⁺诱导的界面合金化,这不成比例地影响了PMA和iDMI的界面敏感来源。本研究建立了离焦离子束辐照作为一种通用的纳米制造技术,用于设计二维磁性超表面和原型赛道存储设备。
{"title":"Decoupling Perpendicular Anisotropy and Dzyaloshinskii-Moriya Interaction in Ultrathin Ferromagnets by Defocused Ga⁺ Ion Beam Irradiation","authors":"A.V. Ognev,&nbsp;A. Yu. Samardak,&nbsp;A.G. Kolesnikov,&nbsp;M.A. Bazrov,&nbsp;A.V. Davydenko,&nbsp;E.V. Pustovalov,&nbsp;A.A. Pervishko,&nbsp;D. Yudin,&nbsp;A.V. Sadovnikov,&nbsp;S.A. Nikitov,&nbsp; C.H. Wan,&nbsp;X.F. Han,&nbsp;A.S. Samardak","doi":"10.1007/s10948-025-07114-3","DOIUrl":"10.1007/s10948-025-07114-3","url":null,"abstract":"<div><p>The precise and local manipulation of perpendicular magnetic anisotropy (PMA) and the interfacial Dzyaloshinskii-Moriya interaction (iDMI) is paramount for the development of skyrmion-based spintronic devices. While light-ion irradiation has been explored for magnetic property modification, the use of heavy ions offers a pathway for enhanced interfacial intermixing and potentially decoupled control of these key parameters. Here, we demonstrate that defocused Ga⁺ ion beam irradiation acts as a powerful tool for the graded, local tuning of magnetic properties in Ru/Co/W/Ru multilayers. We achieve a continuous transformation of the magnetic domain structure, from labyrinthine stripes to isolated sub-micrometer skyrmion bubbles, by selectively varying the irradiation fluence. Crucially, we find that PMA and iDMI exhibit distinct degradation rates upon irradiation, with the anisotropy energy decreasing fourfold while the iDMI strength is halved, enabling a widened window for skyrmion stabilization. Micromagnetic simulations, calibrated with experimental parameters, confirm the formation of nanoscale skyrmions (~ 130 nm) at high fluences where direct optical observation is limited. Combined experimental characterization and first-principles calculations reveal that this decoupling stems from Ga⁺-induced interfacial alloying, which disproportionately affects the interface-sensitive origins of PMA and iDMI. This work establishes defocused ion beam irradiation as a versatile nanofabrication technique for designing two-dimensional magnetic metasurfaces and prototype race-track memory devices.</p></div>","PeriodicalId":669,"journal":{"name":"Journal of Superconductivity and Novel Magnetism","volume":"39 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2025-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145831116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Superconductivity and Novel Magnetism
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