Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300749
Ernest Sng, Sai Wei. Chua, Scott Roy, I. Lim
Recent developments on Bifacial Photovoltaic (PV) modules have captured a significant amount of attention as this technology is becoming more affordable and is able to produce more output compared to the traditional monofacial solar panels, the advantage of this technology comes from its ability to absorb additional irradiance from the rear which the monofacial panel is in capable of. Despite being more affordable and able to produce more power, this technology is still not widely used as there is still many issues in predicting the output of the rear accurately through simulations. The rear irradiance is affected by many factors such as the albedo of the ground, reflectivity of the surrounding surfaces, the height from the ground, the tilt angle and the mounting structure.
{"title":"Solar Energy Simulation of Bifacial Panels for Performance Optimisation","authors":"Ernest Sng, Sai Wei. Chua, Scott Roy, I. Lim","doi":"10.1109/PVSC45281.2020.9300749","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300749","url":null,"abstract":"Recent developments on Bifacial Photovoltaic (PV) modules have captured a significant amount of attention as this technology is becoming more affordable and is able to produce more output compared to the traditional monofacial solar panels, the advantage of this technology comes from its ability to absorb additional irradiance from the rear which the monofacial panel is in capable of. Despite being more affordable and able to produce more power, this technology is still not widely used as there is still many issues in predicting the output of the rear accurately through simulations. The rear irradiance is affected by many factors such as the albedo of the ground, reflectivity of the surrounding surfaces, the height from the ground, the tilt angle and the mounting structure.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82910787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9301008
P. Babál, M. Korevaar, Sven Franken, J. Mes, T. Bergmans, K. Wilson
In recent decades, photovoltaic (PV) panels have emerged as one of the leading renewable energy technologies. A new development is the advent of bifacial modules which enhance the energy production by conversion of rear side irradiance. To accurately know the performance ratio of PV parks with bifacial modules, it is necessary to also measure the backside irradiance. It is still not well known what factors influence the backside irradiance measurement uncertainty and to what extent. In this work, the back of array (POArear) irradiance was measured with sensors and panels at different tilt angles and albedos, providing representative conditions for various locations. Kipp & Zonen pyranometers, working class reference cells and an experimental pyranometer were used to collect irradiance data. By means of measurements and calculations, the uncertainty of different measurement technologies and their installation position with respect to panel height are quantified.
{"title":"Uncertainties in irradiance measurements of sensors to POArear of bifacial solar panels","authors":"P. Babál, M. Korevaar, Sven Franken, J. Mes, T. Bergmans, K. Wilson","doi":"10.1109/PVSC45281.2020.9301008","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9301008","url":null,"abstract":"In recent decades, photovoltaic (PV) panels have emerged as one of the leading renewable energy technologies. A new development is the advent of bifacial modules which enhance the energy production by conversion of rear side irradiance. To accurately know the performance ratio of PV parks with bifacial modules, it is necessary to also measure the backside irradiance. It is still not well known what factors influence the backside irradiance measurement uncertainty and to what extent. In this work, the back of array (POArear) irradiance was measured with sensors and panels at different tilt angles and albedos, providing representative conditions for various locations. Kipp & Zonen pyranometers, working class reference cells and an experimental pyranometer were used to collect irradiance data. By means of measurements and calculations, the uncertainty of different measurement technologies and their installation position with respect to panel height are quantified.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82751652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300566
Siming Li, R. Farshchi, Michael F. Miller, A. Arehart, D. Kuciauskas
We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se2 thin films. The device shows power conversion efficiency of 18.7%. The metastable defect VSe-VCu within ACIGS at $text{Ev}+0.98 text{eV}$ is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as CuGaor CuIn. The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of VCu-VSe defect is reduced to below 1015cm−3. This study indicates that ACIGS has improved cell efficiency and reliability characteristics.
{"title":"Optical Characterization of Defects in High-efficiency (Ag,Cu)(In,Ga)Se2","authors":"Siming Li, R. Farshchi, Michael F. Miller, A. Arehart, D. Kuciauskas","doi":"10.1109/PVSC45281.2020.9300566","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300566","url":null,"abstract":"We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se<inf>2</inf> thin films. The device shows power conversion efficiency of 18.7%. The metastable defect V<inf>Se</inf>-V<inf>Cu</inf> within ACIGS at <tex>$text{Ev}+0.98 text{eV}$</tex> is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as Cu<inf>Ga</inf>or Cu<inf>In</inf>. The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of V<inf>Cu</inf>-V<inf>Se</inf> defect is reduced to below 10<sup>15</sup>cm<sup>−3</sup>. This study indicates that ACIGS has improved cell efficiency and reliability characteristics.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82807476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300876
S. Muchande, S. Thale, R. Wandhare
The decreasing cost and simplicity in deployment of Solar-Photovoltaic (SPV) system have led to its penetration extended to the highly remote/rural areas. The SPV systems possessing non-dispatchable characteristics are typically deployed in the form of a DC microgrid or an AC microgrid in such areas. For rural electrification, a low voltage DC microgrid with SPV source suitably integrated with local resources like wind or micro-hydro generation plant supported with energy storage becomes highly desirable to enhance the availability of power throughout the day. This paper presents implementation and control of an autonomous Integrated SPV-battery and Micro-hydro based DC microgrid (DC-MG) meeting the need of electrical energy in remote rural areas. This paper proposes the hierarchical power control which enhances the operational reliability and flexibility.
{"title":"Integrated Solar PV-Battery and Micro-Hydro Based Low-Voltage Autonomous DC Microgrid for Rural Electrification","authors":"S. Muchande, S. Thale, R. Wandhare","doi":"10.1109/PVSC45281.2020.9300876","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300876","url":null,"abstract":"The decreasing cost and simplicity in deployment of Solar-Photovoltaic (SPV) system have led to its penetration extended to the highly remote/rural areas. The SPV systems possessing non-dispatchable characteristics are typically deployed in the form of a DC microgrid or an AC microgrid in such areas. For rural electrification, a low voltage DC microgrid with SPV source suitably integrated with local resources like wind or micro-hydro generation plant supported with energy storage becomes highly desirable to enhance the availability of power throughout the day. This paper presents implementation and control of an autonomous Integrated SPV-battery and Micro-hydro based DC microgrid (DC-MG) meeting the need of electrical energy in remote rural areas. This paper proposes the hierarchical power control which enhances the operational reliability and flexibility.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91487359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300659
H. Tong, Sina Soltanmohammad, W. Shafarman, T. Anderson
The substitution of Ag for Cu in Cu(Ga, In)Se2 has been shown to optimize the bandgap of the chalcopyrite while decreasing defect density and formation temperature. The synthesis of chalcopyrite via selenization of metal precursor films with a complete substitution of Ag for Cu was studied both in-situ during selenization using high temperature x-ray diffraction and ex-situ using electron microcopy. AgInSe2 formation at low temperatures was limited by the availability of Ag in the liquid phase resulting in the formation of Ag-deficient Ag-In-Se phases. Ga alloying into AgInSe2 at high temperature was limited by the stability of (Ga, In)2Se3.
在Cu(Ga, in)Se2中Ag取代Cu可以优化黄铜矿的带隙，同时降低缺陷密度和形成温度。采用原位高温x射线衍射和非原位电镜研究了金属前驱体薄膜硒化过程中Ag完全取代Cu合成黄铜矿的过程。低温下AgInSe2的形成受到液相中Ag的可用性的限制，导致形成缺乏Ag的Ag- in - se相。(Ga, In)2Se3的稳定性限制了Ga在高温下合金化成AgInSe2的过程。
{"title":"Formation of Ag(Ga, In)Se2 During Selenization of Ag-Ga/In Precursor","authors":"H. Tong, Sina Soltanmohammad, W. Shafarman, T. Anderson","doi":"10.1109/PVSC45281.2020.9300659","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300659","url":null,"abstract":"The substitution of Ag for Cu in Cu(Ga, In)Se2 has been shown to optimize the bandgap of the chalcopyrite while decreasing defect density and formation temperature. The synthesis of chalcopyrite via selenization of metal precursor films with a complete substitution of Ag for Cu was studied both in-situ during selenization using high temperature x-ray diffraction and ex-situ using electron microcopy. AgInSe2 formation at low temperatures was limited by the availability of Ag in the liquid phase resulting in the formation of Ag-deficient Ag-In-Se phases. Ga alloying into AgInSe2 at high temperature was limited by the stability of (Ga, In)2Se3.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300952
S. Gharibzadeh, I. Hossain, P. Fassl, A. Mertens, S. Schäfer, M. Rienäcker, T. Wietler, R. Peibst, B. Richards, U. Paetzold
Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.
{"title":"2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics","authors":"S. Gharibzadeh, I. Hossain, P. Fassl, A. Mertens, S. Schäfer, M. Rienäcker, T. Wietler, R. Peibst, B. Richards, U. Paetzold","doi":"10.1109/PVSC45281.2020.9300952","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300952","url":null,"abstract":"Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91519093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300980
N. Ekins‐Daukes, M. H. Sazzad, Lamees Al Kiyumi, M. Nielsen, P. Reece, A. Mellor, M. Green, Andreas Pusch
Conventional photovoltaic solar power conversion relies on extracting free energy from the flow of thermal radiation from a hot emitter, the sun, to a cold absorber, the PV cell. A PV cell can thus be described as a heat engine. A much less well studied configuration is to place the engine on the hot side of this problem, so for example extract free energy from the flow of thermal radiation from the Earth into the very cold void of outer space. This proposition has recently been studied by a increasingly large number of research groups, showing a semiconductor thermoradiative diode operating in the fourth IV quadrant with negative voltage and positive current will generate power. The limits to this process will be presented together with an assessment of the power density that could be achieved by either radiating into the night sky, or as a means of heat recovery.
{"title":"Generating Power at Night Using a Thermoradiative Diode, How is this Possible?","authors":"N. Ekins‐Daukes, M. H. Sazzad, Lamees Al Kiyumi, M. Nielsen, P. Reece, A. Mellor, M. Green, Andreas Pusch","doi":"10.1109/PVSC45281.2020.9300980","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300980","url":null,"abstract":"Conventional photovoltaic solar power conversion relies on extracting free energy from the flow of thermal radiation from a hot emitter, the sun, to a cold absorber, the PV cell. A PV cell can thus be described as a heat engine. A much less well studied configuration is to place the engine on the hot side of this problem, so for example extract free energy from the flow of thermal radiation from the Earth into the very cold void of outer space. This proposition has recently been studied by a increasingly large number of research groups, showing a semiconductor thermoradiative diode operating in the fourth IV quadrant with negative voltage and positive current will generate power. The limits to this process will be presented together with an assessment of the power density that could be achieved by either radiating into the night sky, or as a means of heat recovery.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90495649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300702
G. Cattaneo, J. Levrat, Hengyu Li, V. Barth, L. Sicot, A. Richter, C. Colletti, F. Rametta, M. Izzi, M. Despeisse, C. Ballif
The main objective of the European project AMPERE was the implementation of a 200 MWp fully automated glass/glass bifacial photovoltaic module pilot line based on silicon heterojunction technology. In this work, the results of the compatibility assessment of different commercial encapsulants with the new module design are presented. The study has been conducted by first testing the durability of each encapsulant and its interaction with the interconnected cells. Later the results have been transferred and validated for full size (72cells) modules by an extended and sequential stress testing sequence. The study showed that polyolefin elastomers are more compatible to heterojunction technology than other commercial encapsulants.
{"title":"Encapsulant Materials for High Reliable Bifacial Heterojunction Glass/Glass Photovoltaic Modules","authors":"G. Cattaneo, J. Levrat, Hengyu Li, V. Barth, L. Sicot, A. Richter, C. Colletti, F. Rametta, M. Izzi, M. Despeisse, C. Ballif","doi":"10.1109/PVSC45281.2020.9300702","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300702","url":null,"abstract":"The main objective of the European project AMPERE was the implementation of a 200 MWp fully automated glass/glass bifacial photovoltaic module pilot line based on silicon heterojunction technology. In this work, the results of the compatibility assessment of different commercial encapsulants with the new module design are presented. The study has been conducted by first testing the durability of each encapsulant and its interaction with the interconnected cells. Later the results have been transferred and validated for full size (72cells) modules by an extended and sequential stress testing sequence. The study showed that polyolefin elastomers are more compatible to heterojunction technology than other commercial encapsulants.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89134112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300965
Sandeep Kumar, S. Avasthi
The direct growth of Ge over Si substrates provides a complementary metal-oxide-semiconductor compatible low-cost way that can be used as a template for GaAs based solar cell and other applications. In this work, the previously reported liquid phase crystallization (LPC) process from our group is used to grow crystalline Ge directly over the Si substrate. No buffer layer is used to relax the lattice mismatch induced strain. The results show a crystalline growth of Ge that is confirmed from x-ray diffraction measurement. The surface morphology is investigated using scanning electron microscope, showing large grain growth in the range from 2–10 μm. The transmission electron microscope investigations show that the threading dislocation densities extend up to ~ 250 nm from the Si/Ge interface. After ~ 250 nm from the Si/Ge interface, the Ge film becomes relaxed and hence, can be used as a template for GaAs based solar cell devices.
{"title":"Liquid phase crystallization of Ge over direct Si substrate as a template for GaAs applications","authors":"Sandeep Kumar, S. Avasthi","doi":"10.1109/PVSC45281.2020.9300965","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300965","url":null,"abstract":"The direct growth of Ge over Si substrates provides a complementary metal-oxide-semiconductor compatible low-cost way that can be used as a template for GaAs based solar cell and other applications. In this work, the previously reported liquid phase crystallization (LPC) process from our group is used to grow crystalline Ge directly over the Si substrate. No buffer layer is used to relax the lattice mismatch induced strain. The results show a crystalline growth of Ge that is confirmed from x-ray diffraction measurement. The surface morphology is investigated using scanning electron microscope, showing large grain growth in the range from 2–10 μm. The transmission electron microscope investigations show that the threading dislocation densities extend up to ~ 250 nm from the Si/Ge interface. After ~ 250 nm from the Si/Ge interface, the Ge film becomes relaxed and hence, can be used as a template for GaAs based solar cell devices.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83841487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300449
Anastasiia Fedorenko, Alireza Abrand, P. Mohseni, S. Hubbard
A four-terminal dual-junction (2J) nanowire (NW) solar cell device concept is proposed and optimized via combined optoelectronic simulation using TCAD tools by Synopsys®. Rigorous coupled wave analysis (RCWA) was used for simulating absorption in GaAs0.73P0.27 and In0.22Ga0.78As NW arrays, while co-simulations in RSoft and Sentaurus was used to develop optimized core-shell NW diode parameters. It was shown that heterojunction designs comprising a wide-bandGaP emitter (GaP and GaAs for the top and bottom cells, respectively) is preferred for reduced impact of surface recombination velocity (SRV) as it promotes recovery of the open-circuit voltages by up to 30 mV and can achieve tandem device efficiency up to 27%. An experimental implementation of the stacked NW solar cell relying on the embedding of the NWs in flexible membranes and delamination of the arrays from the host substrate has been successfully developing. Owing to the versatility of this manufacturing method, the device can be enhanced with rear-side textured reflectors boosting the currents in the sub-cells.
{"title":"Multi-Terminal Dual-Junction GaAs0.73P0.27/In0.22Ga0.78As Nanowire Solar Cell: An Integrated Approach to Simulation","authors":"Anastasiia Fedorenko, Alireza Abrand, P. Mohseni, S. Hubbard","doi":"10.1109/PVSC45281.2020.9300449","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300449","url":null,"abstract":"A four-terminal dual-junction (2J) nanowire (NW) solar cell device concept is proposed and optimized via combined optoelectronic simulation using TCAD tools by Synopsys®. Rigorous coupled wave analysis (RCWA) was used for simulating absorption in GaAs0.73P0.27 and In0.22Ga0.78As NW arrays, while co-simulations in RSoft and Sentaurus was used to develop optimized core-shell NW diode parameters. It was shown that heterojunction designs comprising a wide-bandGaP emitter (GaP and GaAs for the top and bottom cells, respectively) is preferred for reduced impact of surface recombination velocity (SRV) as it promotes recovery of the open-circuit voltages by up to 30 mV and can achieve tandem device efficiency up to 27%. An experimental implementation of the stacked NW solar cell relying on the embedding of the NWs in flexible membranes and delamination of the arrays from the host substrate has been successfully developing. Owing to the versatility of this manufacturing method, the device can be enhanced with rear-side textured reflectors boosting the currents in the sub-cells.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83180436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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