Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300484
T. Fiducia, A. Howkins, A. Abbas, B. Mendis, A. Munshi, K. Barth, W. Sampath, J. Walls
Since 2015, commercial sample holders have been available that enable cathodoluminescence imaging of semiconductors in the TEM. Despite this, issues with low signal have meant that high resolution TEM-CL imaging has so far not been achieved on a solar cell. Here, we use xenon ion milling and cryogenic sample cooling to boost signal from the TEM foil, enabling high resolution CL imaging of a bilayer CdSeTe/CdTe solar cell for the first time. The results show that selenium has a passivation effect on grain boundaries in alloyed CdSeTe material, helping to explain the superior performance of CdSeTe solar cells.
{"title":"TEM-based Cathodoluminescence of a Selenium-alloyed CdTe Solar Cell","authors":"T. Fiducia, A. Howkins, A. Abbas, B. Mendis, A. Munshi, K. Barth, W. Sampath, J. Walls","doi":"10.1109/PVSC45281.2020.9300484","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300484","url":null,"abstract":"Since 2015, commercial sample holders have been available that enable cathodoluminescence imaging of semiconductors in the TEM. Despite this, issues with low signal have meant that high resolution TEM-CL imaging has so far not been achieved on a solar cell. Here, we use xenon ion milling and cryogenic sample cooling to boost signal from the TEM foil, enabling high resolution CL imaging of a bilayer CdSeTe/CdTe solar cell for the first time. The results show that selenium has a passivation effect on grain boundaries in alloyed CdSeTe material, helping to explain the superior performance of CdSeTe solar cells.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"41 1","pages":"2233-2234"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78379562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300989
Andressa Lorayne Monteiro, Paulo Soares, Ulisses Chemin Netto
This work proposes a case study for photovoltaic systems in isolated locations, modeled for the community of the Ilha do Mel (Honey Island), located in the state of Paraná, Brazil. This work proposes theoretical solutions for the electricity supply on the island based on off-grid solar photovoltaic (PV) systems with storage that could be installed in loco. We modeled case scenarios with the intention of maximizing the welfare of the people living in the island, and, at the same time, minimizing the environmental impacts of the systems. Solar irradiance and temperature data are combined with the electricity load profile of the island to serve as the inputs for the modeling software HOMER PRO, which allowed the creation of multiple scenarios, combining solar PV systems with storage mechanisms such as lead-acid batteries. Using the Net Present Cost (NPC), the best case was obtained, also considering the PV generation, storage, and the payback of the simulated project.
这项工作提出了一个孤立地区光伏系统的案例研究，以巴西帕拉纳州的Ilha do Mel(蜂蜜岛)社区为模型。这项工作提出了基于离网太阳能光伏(PV)系统的岛上电力供应的理论解决方案，该系统具有可以就地安装的存储。我们以最大化居住在岛上的人们的福利，同时最小化系统对环境的影响为目的，对案例场景进行建模。太阳辐照度和温度数据与岛上的电力负荷数据相结合，作为建模软件HOMER PRO的输入，该软件允许创建多个场景，将太阳能光伏系统与铅酸电池等存储机制相结合。利用净当前成本(NPC)，同时考虑光伏发电、储能和模拟项目的投资回报，得到了最优方案。
{"title":"Use of photovoltaic systems for improving community resilience in Honey Island","authors":"Andressa Lorayne Monteiro, Paulo Soares, Ulisses Chemin Netto","doi":"10.1109/PVSC45281.2020.9300989","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300989","url":null,"abstract":"This work proposes a case study for photovoltaic systems in isolated locations, modeled for the community of the Ilha do Mel (Honey Island), located in the state of Paraná, Brazil. This work proposes theoretical solutions for the electricity supply on the island based on off-grid solar photovoltaic (PV) systems with storage that could be installed in loco. We modeled case scenarios with the intention of maximizing the welfare of the people living in the island, and, at the same time, minimizing the environmental impacts of the systems. Solar irradiance and temperature data are combined with the electricity load profile of the island to serve as the inputs for the modeling software HOMER PRO, which allowed the creation of multiple scenarios, combining solar PV systems with storage mechanisms such as lead-acid batteries. Using the Net Present Cost (NPC), the best case was obtained, also considering the PV generation, storage, and the payback of the simulated project.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"20 1","pages":"1706-1708"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76493949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300888
S. Giraldo, Kunal J. Tiwari, Ikram Anefnaf, R. Fonoll, Y. Sánchez, Z. J. Li-Kao, V. Izquierdo‐Roca, A. Safae, Z. Sekkat, A. Pérez‐Rodríguez, E. Saucedo
In this work, the effect of different alkali doping strategies in kesterite Cu2ZnGeSe4 absorbers is studied, including the impact on the structural and morphological characteristics of the semiconductor material, and the optoelectronic properties of the solar cell devices. The studied alkali elements include Li, Na, and K, and are introduced by two main approaches: post-deposition treatment (PDT), and pre-absorber synthesis (PAS). This study shows that PDT strategies are more interesting than PAS, and Li as the best alkali candidate for the further improvement of Cu2ZnGeSe4 devices performance.
{"title":"Effect of Alkali Doping Strategies on the Performance of Wide Band Gap Cu2ZnGeSe4 Thin Film Solar Cells","authors":"S. Giraldo, Kunal J. Tiwari, Ikram Anefnaf, R. Fonoll, Y. Sánchez, Z. J. Li-Kao, V. Izquierdo‐Roca, A. Safae, Z. Sekkat, A. Pérez‐Rodríguez, E. Saucedo","doi":"10.1109/PVSC45281.2020.9300888","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300888","url":null,"abstract":"In this work, the effect of different alkali doping strategies in kesterite Cu2ZnGeSe4 absorbers is studied, including the impact on the structural and morphological characteristics of the semiconductor material, and the optoelectronic properties of the solar cell devices. The studied alkali elements include Li, Na, and K, and are introduced by two main approaches: post-deposition treatment (PDT), and pre-absorber synthesis (PAS). This study shows that PDT strategies are more interesting than PAS, and Li as the best alkali candidate for the further improvement of Cu2ZnGeSe4 devices performance.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"68 5 Pt 1 1","pages":"0732-0735"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77447927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300365
S. Lindig, D. Moser, Björn Müller, K. Kiefer, M. Topič
In this work we present the application of a novel multi-step performance loss algorithm for PV systems and its practical implications. We try to better understand performance impairing effects and common occurrence patterns. The algorithm automatically detects the amount and position of breakpoints in non-linear performance ratio time series of PV systems, divides the time series into sub-parts and evaluates them independently in a linear fashion. Afterwards, based on the position of the breakpoints, system inspection data are used to find root causes for related changes in performance. The methodology is applied to two systems with an overall linear performance loss clearly below 1%/a. The results show similar performance loss patterns. The systems are two medium sized non-residential plants. After applying tailored data filter both systems experience a nearly linear performance loss over time with a slight performance fluctuation at the beginning of operation. This work focuses on system data and issues on system level. The study of the breakpoint-root causes correlation highlighted the necessity of tailoring the initial data filtering to the final objective of the analysis. It has been shown, that the presented algorithm simplifies the detection of performance instances which deviate from the norm.
{"title":"Application of Dynamic Multi-Step Performance Loss Algorithm","authors":"S. Lindig, D. Moser, Björn Müller, K. Kiefer, M. Topič","doi":"10.1109/PVSC45281.2020.9300365","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300365","url":null,"abstract":"In this work we present the application of a novel multi-step performance loss algorithm for PV systems and its practical implications. We try to better understand performance impairing effects and common occurrence patterns. The algorithm automatically detects the amount and position of breakpoints in non-linear performance ratio time series of PV systems, divides the time series into sub-parts and evaluates them independently in a linear fashion. Afterwards, based on the position of the breakpoints, system inspection data are used to find root causes for related changes in performance. The methodology is applied to two systems with an overall linear performance loss clearly below 1%/a. The results show similar performance loss patterns. The systems are two medium sized non-residential plants. After applying tailored data filter both systems experience a nearly linear performance loss over time with a slight performance fluctuation at the beginning of operation. This work focuses on system data and issues on system level. The study of the breakpoint-root causes correlation highlighted the necessity of tailoring the initial data filtering to the final objective of the analysis. It has been shown, that the presented algorithm simplifies the detection of performance instances which deviate from the norm.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"994 1","pages":"0443-0448"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77627441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300803
J. Boyer, Ari N. Blumer, Zak H. Blumer, Francisco A. Rodriguez, Daniel L. Lepkowski, S. Ringel, T. Grassman
Metamorphic III-V/Si materials with low threading dislocation density (TDD) are critical to realizing high-efficiency III-V/Si multijunction photovoltaics. In pursuit of a dual junction III-V/Si design with a GaAs0.75P0.25 top junction epitaxially integrated on a Si bottom junction, we report on progress made in the development of GaP/Si and GaAsyPl-y/Si materials with significantly reduced TDD. Using a tightly integrated study of fundamental dislocation dynamics, rapid electron microscopy based feedback on dislocation populations, and MOCVD process development, we have fully re-engineered the GaP on Si growth process. Our new approach results in a TDD of 7x104 cm−2 for 50 nm thick films. Implementation of a novel dislocation glide enhancing heterostructure then enabled subsequent growth of fully-relaxed, 500 nm total thickness n-GaP with a TDD of 2.4×106 cm−2. When applied to the production of full GaAs0.75P0.25/Si tandem solar cell structures, but without any significant optimization thus far, this low TDD is effectively maintained, yielding a terminal TDD of only 3.0x106 cm−2, sufficient to support high photovoltaic performance.
{"title":"Development of Low-TDD GaAsyP1-y/GaP/Si Metamorphic Materials for High-Efficiency III-V/Si Photovoltaics","authors":"J. Boyer, Ari N. Blumer, Zak H. Blumer, Francisco A. Rodriguez, Daniel L. Lepkowski, S. Ringel, T. Grassman","doi":"10.1109/PVSC45281.2020.9300803","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300803","url":null,"abstract":"Metamorphic III-V/Si materials with low threading dislocation density (TDD) are critical to realizing high-efficiency III-V/Si multijunction photovoltaics. In pursuit of a dual junction III-V/Si design with a GaAs0.75P0.25 top junction epitaxially integrated on a Si bottom junction, we report on progress made in the development of GaP/Si and GaAsyPl-y/Si materials with significantly reduced TDD. Using a tightly integrated study of fundamental dislocation dynamics, rapid electron microscopy based feedback on dislocation populations, and MOCVD process development, we have fully re-engineered the GaP on Si growth process. Our new approach results in a TDD of 7x104 cm−2 for 50 nm thick films. Implementation of a novel dislocation glide enhancing heterostructure then enabled subsequent growth of fully-relaxed, 500 nm total thickness n-GaP with a TDD of 2.4×106 cm−2. When applied to the production of full GaAs0.75P0.25/Si tandem solar cell structures, but without any significant optimization thus far, this low TDD is effectively maintained, yielding a terminal TDD of only 3.0x106 cm−2, sufficient to support high photovoltaic performance.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"1680-1682"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79305755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300567
Michael Scarpull, N. Rock, Akira Nagaoka
Group-V doping in Cd-rich composition shows the promise of maximizing hole concentration while preserving lifetime in CdTe solar cells. Previously we demonstrated CdTe with hole doping >1017cm−3 and bulk lifetime >30 ns. However, Hall effect measurements of samples under exposure to light suggest the formation of metastable light induced defects. Here, we report early attempts to isolate and characterize this defect by means of spectrophotometry. We observe a narrowing of optical bandgap for samples with hole concentration >1017cm−3 as well as band tailing. Isolation of energy threshold of the defect via photoconductivity measurements are ongoing.
{"title":"Sub-Band Gap Absoprtion in As and P Doped CdTe","authors":"Michael Scarpull, N. Rock, Akira Nagaoka","doi":"10.1109/PVSC45281.2020.9300567","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300567","url":null,"abstract":"Group-V doping in Cd-rich composition shows the promise of maximizing hole concentration while preserving lifetime in CdTe solar cells. Previously we demonstrated CdTe with hole doping >1017cm−3 and bulk lifetime >30 ns. However, Hall effect measurements of samples under exposure to light suggest the formation of metastable light induced defects. Here, we report early attempts to isolate and characterize this defect by means of spectrophotometry. We observe a narrowing of optical bandgap for samples with hole concentration >1017cm−3 as well as band tailing. Isolation of energy threshold of the defect via photoconductivity measurements are ongoing.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"30 1","pages":"2130-2131"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79426084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300908
Lance Alpuerto, R. Balog
Solar photovoltaics (PV) are on the forefront of the renewable energy trend in the US mainly due to its accessibility and affordability. The technology continues to grow and develop new and practical applications. The development of the third- generation thin-film materials have increase the robustness of the material allowing it to bend without irreparable damage, making PV conformed to a curvature a possibility. Conventional modeling methods and evaluation techniques are unable to account for the complexities introduced by a curve. This work begins to develop factors to index performance of curved PV to minimize the impact self-shading inherent to the geometry. The two performance factors provided insight into how to minimize the current variance associated with self-shading and gives quantifiable performance data with respect to interconnections to better make application specific design decisions.
{"title":"Defining Performance Factors to Design Non-Planar Photovoltaic Interconnection Scheme","authors":"Lance Alpuerto, R. Balog","doi":"10.1109/PVSC45281.2020.9300908","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300908","url":null,"abstract":"Solar photovoltaics (PV) are on the forefront of the renewable energy trend in the US mainly due to its accessibility and affordability. The technology continues to grow and develop new and practical applications. The development of the third- generation thin-film materials have increase the robustness of the material allowing it to bend without irreparable damage, making PV conformed to a curvature a possibility. Conventional modeling methods and evaluation techniques are unable to account for the complexities introduced by a curve. This work begins to develop factors to index performance of curved PV to minimize the impact self-shading inherent to the geometry. The two performance factors provided insight into how to minimize the current variance associated with self-shading and gives quantifiable performance data with respect to interconnections to better make application specific design decisions.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"24 1","pages":"2367-2369"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81582563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300353
R. Aninat, F. Van den Bruele, P. Tinnemans, J. Schermer, J. Emmelkamp, E. Vlieg, M. Theelen, M. van der Vleuten, H. Linden
A custom-made, highly versatile and industrially-relevant selenisation furnace with in situ XRD capabilities is presented. Mimicking an R&D scale furnace used in our baseline at TNO/Solliance, it uses only elemental chalcogens and gives control over a wide set of process parameters not accessible in commercial setups. It additionally allows fast heating rates (600°C can be reached in 10 minutes) and cooling rates (10 minutes to go down from 600°C to 300°C, to mimic multiple (3+) heated chambers. An in-situ X-Ray Diffraction setup is coupled with the furnace and allows live monitoring of the phase transitions occurring in the sample. Using this setup, we carry out two selenisation experiments on sputtered precursors and observe the effect of process parameters on the interdiffusion between Ga-rich and In-rich regions.
{"title":"In-situ XRD study of Ga/In interdiffusion in Cu(In,Ga)Se2 in an industrially relevant selenization furnace","authors":"R. Aninat, F. Van den Bruele, P. Tinnemans, J. Schermer, J. Emmelkamp, E. Vlieg, M. Theelen, M. van der Vleuten, H. Linden","doi":"10.1109/PVSC45281.2020.9300353","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300353","url":null,"abstract":"A custom-made, highly versatile and industrially-relevant selenisation furnace with in situ XRD capabilities is presented. Mimicking an R&D scale furnace used in our baseline at TNO/Solliance, it uses only elemental chalcogens and gives control over a wide set of process parameters not accessible in commercial setups. It additionally allows fast heating rates (600°C can be reached in 10 minutes) and cooling rates (10 minutes to go down from 600°C to 300°C, to mimic multiple (3+) heated chambers. An in-situ X-Ray Diffraction setup is coupled with the furnace and allows live monitoring of the phase transitions occurring in the sample. Using this setup, we carry out two selenisation experiments on sputtered precursors and observe the effect of process parameters on the interdiffusion between Ga-rich and In-rich regions.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"1279-1282"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84309576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300763
T. Druffel, R. Dharmadasa, K. Ankireddy, K. Elmer, A. Ebong, S. Huneycutt
The front side metallization of silicon solar cells is almost exclusively silver that is deposited using a screen-printed process followed by a sintering step at high temperatures. Over the past decade the industry has severely reduced the amount of silver required, but the material still accounts for about 8 percent of the cost of a solar panel. Copper is a fraction of the cost, but requires multiple layers to protect the underlying silicon wafer and thus is not readily integrated into existing manufacturing plants. In this paper, a copper-based paste is screen printed onto a SiN coated silicon wafer and passed through a high temperature furnace in air. The performance of the device is measured using typical characterization tools. Accelerated testing of the device at elevated temperatures demonstrates an operational device with very little degradation after 1,000 hours at elevated temperature.
{"title":"Copper based front side metalization contacts screen printed and fired in air demonstrating durability","authors":"T. Druffel, R. Dharmadasa, K. Ankireddy, K. Elmer, A. Ebong, S. Huneycutt","doi":"10.1109/PVSC45281.2020.9300763","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300763","url":null,"abstract":"The front side metallization of silicon solar cells is almost exclusively silver that is deposited using a screen-printed process followed by a sintering step at high temperatures. Over the past decade the industry has severely reduced the amount of silver required, but the material still accounts for about 8 percent of the cost of a solar panel. Copper is a fraction of the cost, but requires multiple layers to protect the underlying silicon wafer and thus is not readily integrated into existing manufacturing plants. In this paper, a copper-based paste is screen printed onto a SiN coated silicon wafer and passed through a high temperature furnace in air. The performance of the device is measured using typical characterization tools. Accelerated testing of the device at elevated temperatures demonstrates an operational device with very little degradation after 1,000 hours at elevated temperature.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"2609-2611"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84330321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-06-14DOI: 10.1109/PVSC45281.2020.9300938
A. Onno, A. Danielson, Carey Reich, Anna Kindvall, W. Weigand, A. Munshi, Siming Li, D. Kuciauskas, W. Sampath, Z. Holman
The first step to understand the origin of losses in any photovoltaic solar cell is to determine the fundamental thermodynamic efficiency and voltage limits of such a device. In this contribution, we detail techniques to calculate the voltage limit in the case of cadmium selenium telluride (CdSeTe) solar cells, and how approaches based on bandgap alone—i.e., the Shockley-Queisser approach with step-function absorptance—can overestimate the thermodynamic open-circuit voltage limit $V_{oc,ideal}$. This is particularly true for arsenic-doped samples, which tend to exhibit below-bandgap absorptance.
{"title":"Calculation of the thermodynamic voltage limit of CdSeTe solar cells","authors":"A. Onno, A. Danielson, Carey Reich, Anna Kindvall, W. Weigand, A. Munshi, Siming Li, D. Kuciauskas, W. Sampath, Z. Holman","doi":"10.1109/PVSC45281.2020.9300938","DOIUrl":"https://doi.org/10.1109/PVSC45281.2020.9300938","url":null,"abstract":"The first step to understand the origin of losses in any photovoltaic solar cell is to determine the fundamental thermodynamic efficiency and voltage limits of such a device. In this contribution, we detail techniques to calculate the voltage limit in the case of cadmium selenium telluride (CdSeTe) solar cells, and how approaches based on bandgap alone—i.e., the Shockley-Queisser approach with step-function absorptance—can overestimate the thermodynamic open-circuit voltage limit $V_{oc,ideal}$. This is particularly true for arsenic-doped samples, which tend to exhibit below-bandgap absorptance.","PeriodicalId":6773,"journal":{"name":"2020 47th IEEE Photovoltaic Specialists Conference (PVSC)","volume":"24 1","pages":"0535-0537"},"PeriodicalIF":0.0,"publicationDate":"2020-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84495531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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