Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518589
Elisa Tejeda-Zacarias, P. Baranek, H. Vach
One of the causes of decrease in the performance of silicon-based solar pannels is linked to light and elevated temperature induced degradation (LeTID). Even if experimental evidence shows that different defects in the bulk material of the modules are involved in the mechanisms behind LeTID, its origins remain unresolved. First-principles methods result in powerful tools to understand this degradation at the nano and microscopic levels. In the present work we propose an approach to model LeTID precursor mechanisms by using ab initio methodology.
{"title":"First-principles study on the role of silicon point defects on PERC solar cell degradation","authors":"Elisa Tejeda-Zacarias, P. Baranek, H. Vach","doi":"10.1109/PVSC43889.2021.9518589","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518589","url":null,"abstract":"One of the causes of decrease in the performance of silicon-based solar pannels is linked to light and elevated temperature induced degradation (LeTID). Even if experimental evidence shows that different defects in the bulk material of the modules are involved in the mechanisms behind LeTID, its origins remain unresolved. First-principles methods result in powerful tools to understand this degradation at the nano and microscopic levels. In the present work we propose an approach to model LeTID precursor mechanisms by using ab initio methodology.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"82 1","pages":"0809-0813"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77657277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518925
Mohiddin Sk, D. Barki, Ravi Shankar Dvb, K. Kumar K
The world’s unquestionable dependence on the Chinese solar manufacturing industry has been constant over two decades and particularly intense since the nation’s supremacy was confirmed before the onset of the 2008 global financial crisis. Despite years of trade wars, anti-dumping measures and retaliations, the Chinese PV industry is at its apogee while European manufacturers (actually the ROW) struggle. India, South Korea, Taiwan and Japan have seen their module and cell makers surrender ever more ground to the Chinese giants in recent years. The disruption caused by Covid-19 on Chinese manufacturing prompted arguably the first jolt on the global solar supply chain, with the resulting shortage of PV components compounding virus containment measures around the world to disrupt the industry. In this paper, we discuss how this complex situation can be mitigated through EXIM exercises and efforts on securing the Solar Supply Chain highlights demand opportunities and key issues for the solar manufacturing supply chain to provide policy recommendations to enable creation of a strong supply chain for solar energy in India.
{"title":"Sustainable framework for Global Solar EXIM as a Stimulus to Supply Value Chain in India","authors":"Mohiddin Sk, D. Barki, Ravi Shankar Dvb, K. Kumar K","doi":"10.1109/PVSC43889.2021.9518925","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518925","url":null,"abstract":"The world’s unquestionable dependence on the Chinese solar manufacturing industry has been constant over two decades and particularly intense since the nation’s supremacy was confirmed before the onset of the 2008 global financial crisis. Despite years of trade wars, anti-dumping measures and retaliations, the Chinese PV industry is at its apogee while European manufacturers (actually the ROW) struggle. India, South Korea, Taiwan and Japan have seen their module and cell makers surrender ever more ground to the Chinese giants in recent years. The disruption caused by Covid-19 on Chinese manufacturing prompted arguably the first jolt on the global solar supply chain, with the resulting shortage of PV components compounding virus containment measures around the world to disrupt the industry. In this paper, we discuss how this complex situation can be mitigated through EXIM exercises and efforts on securing the Solar Supply Chain highlights demand opportunities and key issues for the solar manufacturing supply chain to provide policy recommendations to enable creation of a strong supply chain for solar energy in India.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"32 1","pages":"1984-1986"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79313158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518470
M. Ghiassi, A. Skumanich
With the increase in data, the challenges of complex data, and the financial implications of improved insolation accuracy, it has become necessary to include targeted Artificial Intelligence & Machine Learning (AI/ML) for insolation forecasting. Forecasting is a crucial and cost-effective tool for integrating variable renewable resources into power systems. The ability to accurately forecast irradiance will facilitate increased PV adoption on the grid by making the intermittency less disrupting and allowing for better PV utilization, directly assisting in reduction of carbon energy sources.A key problem in solar forecasting is the intermittency of cloud cover, which often exhibits fractal properties and is still challenging to predict and adversely impacts solar farm output management. The physical models which cover weather can only provide a certain level of predictive accuracy and are particularly challenged by cloud forecasting. The key challenges are: limitations in the physical models, massive data, the need to make substantial simplifying estimations.We propose an approach and methodology which can enhance the predictive capabilities of insolation forecasting based on, and leveraging, a type of "bundled" approach which takes into account both the physical models, as well as the empirical mode determined by AI/ML, and exploiting sensor and satellite inputs. The novel aspect is to expand the AI/ML empirical dimension to achieve improved forecasting where the "non-physical-model" modes provide substantial input. We outline the specific methodology, how this is different from current modes, and how it can improve insolation forecasting. Specific examples will be provided and the benefits discussed.
{"title":"On the use of AI as a requirement for improved insolation forecasting accuracy to achieve optimized PV utilization","authors":"M. Ghiassi, A. Skumanich","doi":"10.1109/PVSC43889.2021.9518470","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518470","url":null,"abstract":"With the increase in data, the challenges of complex data, and the financial implications of improved insolation accuracy, it has become necessary to include targeted Artificial Intelligence & Machine Learning (AI/ML) for insolation forecasting. Forecasting is a crucial and cost-effective tool for integrating variable renewable resources into power systems. The ability to accurately forecast irradiance will facilitate increased PV adoption on the grid by making the intermittency less disrupting and allowing for better PV utilization, directly assisting in reduction of carbon energy sources.A key problem in solar forecasting is the intermittency of cloud cover, which often exhibits fractal properties and is still challenging to predict and adversely impacts solar farm output management. The physical models which cover weather can only provide a certain level of predictive accuracy and are particularly challenged by cloud forecasting. The key challenges are: limitations in the physical models, massive data, the need to make substantial simplifying estimations.We propose an approach and methodology which can enhance the predictive capabilities of insolation forecasting based on, and leveraging, a type of \"bundled\" approach which takes into account both the physical models, as well as the empirical mode determined by AI/ML, and exploiting sensor and satellite inputs. The novel aspect is to expand the AI/ML empirical dimension to achieve improved forecasting where the \"non-physical-model\" modes provide substantial input. We outline the specific methodology, how this is different from current modes, and how it can improve insolation forecasting. Specific examples will be provided and the benefits discussed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"3 1","pages":"0032-0035"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81623312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518753
N. E. A. Razak, N. Amin, T. S. Kiong, K. Sopian, M. Akhtaruzzaman
Silicon nanostructures are one of the candidates for tomorrow technologies due to its novel physical properties. High-aspect-ratio silicon nanostructures have been proved as effective microstructures for enhance silicon solar cells efficiency. Silicon nanowires enhance solar cells efficiency by formation vertical well aligned nanowires on the top surfaces which give effects to the optical, electronic and physical properties of silicon solar cells. Silicon nanowires also can enhance the carrier collection of photovoltaic devices. There are two types of methods used to fabricate silicon nanowires such as top-down or bottom-up fabrication. One of the techniques to get high-aspect-ratio nanostructures is by using metal-assisted chemical etching (MACE). Metal-assisted chemical etching (MACE) technique has been adopted in many research experiments and technology due to its low cost fabrication of silicon nanowires but can form a high-aspect-ratio of silicon nanowires. MACE has demonstrates outstanding results of silicon nanowires in improving many microelectronics and photonic devices. Traditionally, MACE is operated by making a holes using metal catalyst in order to reduce of using the etchant. The mobility of the reactants impeded when the height of silicon nanowires increases which resulting insufficient holes. However, MACE also has advantages and drawbacks which appear such as long-vertical-well aligned silicon nanowires and some broken silicon nanowires due to very thin silicon nanowires which easily to break, respectively. In this paper, different solutions concentration is study using a two-step MACE process. The chemical solution contains HF/AgNO3 and also H2O2. The experiment is conducted at room temperature. During the etching process, anisotropic growth different silver particles which used for the formation of the silicon nanowires on silicon wafer surfaces. As a results, the etch rate gives the effect on the silicon nanowires length. A comparative study of etch rate has been conducted in order to see clearly the differences.
{"title":"Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique","authors":"N. E. A. Razak, N. Amin, T. S. Kiong, K. Sopian, M. Akhtaruzzaman","doi":"10.1109/PVSC43889.2021.9518753","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518753","url":null,"abstract":"Silicon nanostructures are one of the candidates for tomorrow technologies due to its novel physical properties. High-aspect-ratio silicon nanostructures have been proved as effective microstructures for enhance silicon solar cells efficiency. Silicon nanowires enhance solar cells efficiency by formation vertical well aligned nanowires on the top surfaces which give effects to the optical, electronic and physical properties of silicon solar cells. Silicon nanowires also can enhance the carrier collection of photovoltaic devices. There are two types of methods used to fabricate silicon nanowires such as top-down or bottom-up fabrication. One of the techniques to get high-aspect-ratio nanostructures is by using metal-assisted chemical etching (MACE). Metal-assisted chemical etching (MACE) technique has been adopted in many research experiments and technology due to its low cost fabrication of silicon nanowires but can form a high-aspect-ratio of silicon nanowires. MACE has demonstrates outstanding results of silicon nanowires in improving many microelectronics and photonic devices. Traditionally, MACE is operated by making a holes using metal catalyst in order to reduce of using the etchant. The mobility of the reactants impeded when the height of silicon nanowires increases which resulting insufficient holes. However, MACE also has advantages and drawbacks which appear such as long-vertical-well aligned silicon nanowires and some broken silicon nanowires due to very thin silicon nanowires which easily to break, respectively. In this paper, different solutions concentration is study using a two-step MACE process. The chemical solution contains HF/AgNO3 and also H2O2. The experiment is conducted at room temperature. During the etching process, anisotropic growth different silver particles which used for the formation of the silicon nanowires on silicon wafer surfaces. As a results, the etch rate gives the effect on the silicon nanowires length. A comparative study of etch rate has been conducted in order to see clearly the differences.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"12 1","pages":"2600-2603"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81933641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518742
A. Boca, Clara A. MacFarland, J. Schwartz, J. Grandidier, M. McEachen, Jim Spink, M. Eskenazi, C. McPheeters, Lance Fesler, B. Cho
Solar arrays are highly versatile, relatively low cost, and readily available, which is why they have been the power source of choice for the vast majority of NASA's space science missions so far, from the Sun's corona at 0.04 AU to the orbit of Jupiter at 5.5 AU. The Jet Propulsion Laboratory is currently investigating whether the capability range of solar arrays can be viably extended even further out into deep space, all the way to the orbit of Saturn at 9.5 AU, and possibly beyond. We therefore set out to develop a solar array technology that is optimized for operating in deep space, thereby promising substantial mass and cost savings relative to currently available power sources. This paper summarizes recent progress we have made towards developing a solar array capable of ~3 W/kg end of mission specific power at Saturn, and towards demonstrating its performance in the relevant environment.
{"title":"Development of a High-Efficiency Lightweight Solar Array for Deep-Space Missions","authors":"A. Boca, Clara A. MacFarland, J. Schwartz, J. Grandidier, M. McEachen, Jim Spink, M. Eskenazi, C. McPheeters, Lance Fesler, B. Cho","doi":"10.1109/PVSC43889.2021.9518742","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518742","url":null,"abstract":"Solar arrays are highly versatile, relatively low cost, and readily available, which is why they have been the power source of choice for the vast majority of NASA's space science missions so far, from the Sun's corona at 0.04 AU to the orbit of Jupiter at 5.5 AU. The Jet Propulsion Laboratory is currently investigating whether the capability range of solar arrays can be viably extended even further out into deep space, all the way to the orbit of Saturn at 9.5 AU, and possibly beyond. We therefore set out to develop a solar array technology that is optimized for operating in deep space, thereby promising substantial mass and cost savings relative to currently available power sources. This paper summarizes recent progress we have made towards developing a solar array capable of ~3 W/kg end of mission specific power at Saturn, and towards demonstrating its performance in the relevant environment.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"62 1","pages":"1495-1498"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84286811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518869
Wenzhan Xu, Yu Gao, F. Kang, Guo-dan Wei
All-inorganic CsPbI2Br has attracted intensive attention due to its superior stability against thermal aging and light soaking. However, a large open circuit voltage (VOC) loss results from non-radiative recombination and the mismatched energy level alignment between CsPbI2Br and SnO2/Spiro-MeOTAD charge carrier extraction layer, has been discussed and rarely solved. Perovskite solar cells have theoretically a high value of VOC that can be obtained relative to the wide bandgap. Herein, IC61BA has been employed to modify the SnO2 surface to reduce surface defects, at the same time, a moderate energy level (CsPbI2Br)1-x(CsPbI3)x layer has been introduced at the interface between CsPbI2Br and Spiro-MeOTAD to form graded energy level alignment. As a result, correspondingly, the surface passivation and energy level tailoring reduced the energy level loss from reduced non-radiative recombination and a remarkable open circuit voltage (VOC) improved from 1.13 V to 1.34 V has been achieved, which further boosts the power conversion efficiency (PCE) of 15.56%.
{"title":"Low non-radiative recombination loss in CsPbI2Br perovskite solar cells","authors":"Wenzhan Xu, Yu Gao, F. Kang, Guo-dan Wei","doi":"10.1109/PVSC43889.2021.9518869","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518869","url":null,"abstract":"All-inorganic CsPbI2Br has attracted intensive attention due to its superior stability against thermal aging and light soaking. However, a large open circuit voltage (VOC) loss results from non-radiative recombination and the mismatched energy level alignment between CsPbI2Br and SnO2/Spiro-MeOTAD charge carrier extraction layer, has been discussed and rarely solved. Perovskite solar cells have theoretically a high value of VOC that can be obtained relative to the wide bandgap. Herein, IC61BA has been employed to modify the SnO2 surface to reduce surface defects, at the same time, a moderate energy level (CsPbI2Br)1-x(CsPbI3)x layer has been introduced at the interface between CsPbI2Br and Spiro-MeOTAD to form graded energy level alignment. As a result, correspondingly, the surface passivation and energy level tailoring reduced the energy level loss from reduced non-radiative recombination and a remarkable open circuit voltage (VOC) improved from 1.13 V to 1.34 V has been achieved, which further boosts the power conversion efficiency (PCE) of 15.56%.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"6 1","pages":"1893-1896"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84390020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518858
Saeed S. I. Almishal, Ola Rashwan
Lead-free halide perovskites are of great importance as prospective materials for efficient solar cells. Germanium is a very promising non-toxic alternative to lead. In this study, the crystal configuration, projected density of states and band structure of the trigonal CsGeI3, the yellow and the quenched black orthorhombic CsPbI3, and the cubic CsPbI3 were investigated using the density functional theory with Perdew-Burke-Ernzerhof functional. Our calculations showed that for the CsGeI3, the valence band maximum is mainly contributed by the I 5p and Ge 4s orbitals whereas the conduction band minimum is mainly contributed by the Ge 4p orbitals. The replacement of Pb with Ge results in a narrower bandgap.
{"title":"A Comparative Study of the Structural and Electronic Properties of Orthorhombic and Cubic CsPbI3 and Trigonal CsGeI3 using First-Principles Calculations","authors":"Saeed S. I. Almishal, Ola Rashwan","doi":"10.1109/PVSC43889.2021.9518858","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518858","url":null,"abstract":"Lead-free halide perovskites are of great importance as prospective materials for efficient solar cells. Germanium is a very promising non-toxic alternative to lead. In this study, the crystal configuration, projected density of states and band structure of the trigonal CsGeI3, the yellow and the quenched black orthorhombic CsPbI3, and the cubic CsPbI3 were investigated using the density functional theory with Perdew-Burke-Ernzerhof functional. Our calculations showed that for the CsGeI3, the valence band maximum is mainly contributed by the I 5p and Ge 4s orbitals whereas the conduction band minimum is mainly contributed by the Ge 4p orbitals. The replacement of Pb with Ge results in a narrower bandgap.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"1837-1841"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84947647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518937
Depeng Qiu, Weiyuan Duan, A. Lambertz, K. Bittkau, Kaifu Qiu, K. Ding
To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (Fc) of nc-Si:H can be obtained at lower silane gas fraction (fSiH4), lower power and higher phosphorous gas fraction (fPH3). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%abs gain of FF as well as 0.7%abs gain of efficiency is reached compared with reference. The best solar cell exhibits the Voc of 733.3 mV, FF of 79.7%, Jsc of 39.00 mA/cm2 and η of 22.79% at the M2 size wafer.
{"title":"Utilization of ultra-thin n-type Hydrogenated Nanocrystalline Silicon for Silicon Heterojunction Solar Cells","authors":"Depeng Qiu, Weiyuan Duan, A. Lambertz, K. Bittkau, Kaifu Qiu, K. Ding","doi":"10.1109/PVSC43889.2021.9518937","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518937","url":null,"abstract":"To optimize the electrical performance of silicon heterojunction solar cell devices, the electronic properties and microstructure of n-type nc-Si:H were characterized and analyzed. It was found that higher conductivity and crystalline volume fraction (F<inf>c</inf>) of nc-Si:H can be obtained at lower silane gas fraction (f<inf>SiH4</inf>), lower power and higher phosphorous gas fraction (f<inf>PH3</inf>). In our case, there is a decline of the passivation for the devices with nc-Si:H after sputtering process. By increasing the phosphine flow fraction, the sputter damage can be reduced and 3%<inf>abs</inf> gain of FF as well as 0.7%<inf>abs</inf> gain of efficiency is reached compared with reference. The best solar cell exhibits the V<inf>oc</inf> of 733.3 mV, FF of 79.7%, J<inf>sc</inf> of 39.00 mA/cm<sup>2</sup> and η of 22.79% at the M2 size wafer.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"70 1","pages":"0806-0808"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85079789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518611
M. G. Moheyer, Marco A. Ramos, Edgar R. Sandoval, N. Pitalua-Diaz, R. Asomoza, G. Romero-Paredes, Y. Matsumoto
Performance ratio (PR) of 60 kWp photovoltaic system (PVS) were measured considering the soiling effect in the interval of December 2019 to January 2020. Towards final week of December 2019, the PVS started showing a poor PR due to the natural soiling in a photovoltaic-array, but due to rainfall at mid-January 2020, the PR was recuperated. The average PR for January was 71.1%, but the cleaned PV-array by the rainfall showed an about 14 points of increment in energy generation from 63.3 to 77.3 %. Also, it is discussed the average generated energy during 2019 which was 267.8 kWh/day and in 2020, it was 273.3 kWh/day, with the corresponding PR of 76.7% and 76.8%, respectively.
{"title":"Notable changes in the performance of a photovoltaic system due to the dirt and cleaning cycles of PV-array","authors":"M. G. Moheyer, Marco A. Ramos, Edgar R. Sandoval, N. Pitalua-Diaz, R. Asomoza, G. Romero-Paredes, Y. Matsumoto","doi":"10.1109/PVSC43889.2021.9518611","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518611","url":null,"abstract":"Performance ratio (PR) of 60 kWp photovoltaic system (PVS) were measured considering the soiling effect in the interval of December 2019 to January 2020. Towards final week of December 2019, the PVS started showing a poor PR due to the natural soiling in a photovoltaic-array, but due to rainfall at mid-January 2020, the PR was recuperated. The average PR for January was 71.1%, but the cleaned PV-array by the rainfall showed an about 14 points of increment in energy generation from 63.3 to 77.3 %. Also, it is discussed the average generated energy during 2019 which was 267.8 kWh/day and in 2020, it was 273.3 kWh/day, with the corresponding PR of 76.7% and 76.8%, respectively.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"0656-0659"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85641265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518929
Emilie Raoult, Thomas Guillemot, Sophie Bernard, Marion Provost, V. Daniau, Armelle Yaiche, N. Schneider, Damien Coutancier, R. Bodeux, S. Collin, J. Rousset, Sébastien Jutteau
This work presents a path to the fabrication of highly efficient, large size 4-Terminal (4T) perovskite silicon tandem. As a first step, our deposition process of perovskite based on spin coating was transferred to slot die coating, enabling large surface areas. Simultaneously, a semitransparent perovskite solar cell was designed to ensure a high optical transmission in the near-infrared (NIR) and we achieved a transmission of 90% at 900 nm, in good agreement with the optical simulation. As a second step, a stack reproducing the perovskite solar cell has been packaged with an n-PERT silicon cell in a box printed in 3D to form a pseudo-tandem with 16 cm2 active area. This device allows to guarantee its durability and to precisely assess the performances of the filtered silicon bottom cell thanks to correct optical alignment. It also minimizes optical losses between both silicon bottom and perovskite top cells. Combining a 16.9% perovskite top cell (active surface of 0.09 cm2) deposited by slot die and a 6.4% filtered silicon bottom cell results in an efficiency of 23.3% for a 4T tandem solar cell. Moreover, a filtered silicon solar with 8.2% efficiency is obtained using a perovskite solar cell stack optimized for NIR. The fabrication of 4T tandem over 16 cm2 active area are currently in progress and will be discussed.
{"title":"Toward a highly efficient large surface Perovskite Silicon 4-Terminal tandem module","authors":"Emilie Raoult, Thomas Guillemot, Sophie Bernard, Marion Provost, V. Daniau, Armelle Yaiche, N. Schneider, Damien Coutancier, R. Bodeux, S. Collin, J. Rousset, Sébastien Jutteau","doi":"10.1109/PVSC43889.2021.9518929","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518929","url":null,"abstract":"This work presents a path to the fabrication of highly efficient, large size 4-Terminal (4T) perovskite silicon tandem. As a first step, our deposition process of perovskite based on spin coating was transferred to slot die coating, enabling large surface areas. Simultaneously, a semitransparent perovskite solar cell was designed to ensure a high optical transmission in the near-infrared (NIR) and we achieved a transmission of 90% at 900 nm, in good agreement with the optical simulation. As a second step, a stack reproducing the perovskite solar cell has been packaged with an n-PERT silicon cell in a box printed in 3D to form a pseudo-tandem with 16 cm2 active area. This device allows to guarantee its durability and to precisely assess the performances of the filtered silicon bottom cell thanks to correct optical alignment. It also minimizes optical losses between both silicon bottom and perovskite top cells. Combining a 16.9% perovskite top cell (active surface of 0.09 cm2) deposited by slot die and a 6.4% filtered silicon bottom cell results in an efficiency of 23.3% for a 4T tandem solar cell. Moreover, a filtered silicon solar with 8.2% efficiency is obtained using a perovskite solar cell stack optimized for NIR. The fabrication of 4T tandem over 16 cm2 active area are currently in progress and will be discussed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"26 1","pages":"0290-0293"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85684253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：