Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518475
Yahya Z. Alharthi
This paper investigates the performance of Solar PV system in a hybrid grid-connected system. This grid-connected system assumed to be built in the Kingdom of Saudi Arabia western region. To model and assess the potential of this system, HOMER software was used. Renewable energy resources, technical aspects, economic and sensitivity analysis were investigated. Generally, the results showed that the system in the selected has a low LCOE. However, the technical and economic analysis showed that there are several factors (Potential of RE resources, power output, and increasing in load demand and electricity prices) that have a significant impact on system’s power production, NPC, and LCOE.
{"title":"Solar PV system performance in a combined hybrid grid-connected system","authors":"Yahya Z. Alharthi","doi":"10.1109/PVSC43889.2021.9518475","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518475","url":null,"abstract":"This paper investigates the performance of Solar PV system in a hybrid grid-connected system. This grid-connected system assumed to be built in the Kingdom of Saudi Arabia western region. To model and assess the potential of this system, HOMER software was used. Renewable energy resources, technical aspects, economic and sensitivity analysis were investigated. Generally, the results showed that the system in the selected has a low LCOE. However, the technical and economic analysis showed that there are several factors (Potential of RE resources, power output, and increasing in load demand and electricity prices) that have a significant impact on system’s power production, NPC, and LCOE.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"13 1","pages":"0195-0198"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82010558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518788
Jana Wulf, E. Oliva, G. Mikolasch, J. Bartsch, F. Dimroth, H. Helmers
III-V based solar cells have demonstrated highest conversion efficiencies. To enable further integration into the photovoltaic industry cost reduction is required. We present a processing scheme to fabricate inverted GaAs solar cells via patterned direct rear side plating and subsequent epitaxial lift-off. Contact resistances well below 10−4 Ω cm2 are demonstrated using direct nickel plating on a palladium activated surface. In the presented process etching of the AlAs sacrificial layer with hydrofluoric acid is accelerated due to simultaneous attack through the patterned structure, leading to fast lift-off times of below 2:20 h for a four-inch wafer with 8.0×8.5 mm2-sized lift-off areas. We find that the homogeneity of direct plating is crucial for the stability of the process. Characterization results of inverted GaAs thin film cells are presented. The presented processing scheme is a promising approach for the processing of thin film solar cells which enables low-cost rear side metal deposition and a fast lift-off time.
{"title":"Thin film GaAs solar cell enabled by direct rear side plating and patterned epitaxial lift-off","authors":"Jana Wulf, E. Oliva, G. Mikolasch, J. Bartsch, F. Dimroth, H. Helmers","doi":"10.1109/PVSC43889.2021.9518788","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518788","url":null,"abstract":"III-V based solar cells have demonstrated highest conversion efficiencies. To enable further integration into the photovoltaic industry cost reduction is required. We present a processing scheme to fabricate inverted GaAs solar cells via patterned direct rear side plating and subsequent epitaxial lift-off. Contact resistances well below 10−4 Ω cm2 are demonstrated using direct nickel plating on a palladium activated surface. In the presented process etching of the AlAs sacrificial layer with hydrofluoric acid is accelerated due to simultaneous attack through the patterned structure, leading to fast lift-off times of below 2:20 h for a four-inch wafer with 8.0×8.5 mm2-sized lift-off areas. We find that the homogeneity of direct plating is crucial for the stability of the process. Characterization results of inverted GaAs thin film cells are presented. The presented processing scheme is a promising approach for the processing of thin film solar cells which enables low-cost rear side metal deposition and a fast lift-off time.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"128 1","pages":"1931-1935"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91230564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518841
Tao Song, L. Ottoson, Josh Gallon, D. Friedman, N. Kopidakis
As the perovskite technology is ramping up into commercialization, reliable and accurate power rating of large-size perovskite modules becomes a prominent aspect for its future deployment in the PV market. It is known that the performance calibration of perovskite PV devices is very challenging due to its complex dynamic response during a conventional current-voltage (IV) measurement. PV researchers have previously proposed several steady-state performance calibration methods to reliably extract PV efficiencies, but mostly focus on small area research-type cells. In this paper, we emphasize the importance of reliable performance calibration on large-size perovskite modules. Extending the NREL Cell and Module Performance (CMP) group’s steady-state performance calibration protocol (i.e., Asymptotic PMAX Scan) for perovskite cells to modules, we justify the necessity of reporting steady-state efficiencies for perovskite cells and discuss the challenges of applying this protocol to modules. We also present our protocol for Maximum Power Point Tracking (MPPT), which is a technique often used for performance calibration of perovskite cells and modules, and show a comparison between MPPT and Asymptotic PMAX. Using MPPT we demonstrate the interplay between metastability and degradation in perovskite modules, and emphasize the necessity to develop preconditioning protocols for stabilizing these devices. Our aim is to promote development of consensus protocols for performance calibration of perovskite modules, and to advance their credible power ratings, which will be beneficial to the growth of perovskite technology in the PV market.
{"title":"Reliable Power Rating of Perovskite PV Modules","authors":"Tao Song, L. Ottoson, Josh Gallon, D. Friedman, N. Kopidakis","doi":"10.1109/PVSC43889.2021.9518841","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518841","url":null,"abstract":"As the perovskite technology is ramping up into commercialization, reliable and accurate power rating of large-size perovskite modules becomes a prominent aspect for its future deployment in the PV market. It is known that the performance calibration of perovskite PV devices is very challenging due to its complex dynamic response during a conventional current-voltage (IV) measurement. PV researchers have previously proposed several steady-state performance calibration methods to reliably extract PV efficiencies, but mostly focus on small area research-type cells. In this paper, we emphasize the importance of reliable performance calibration on large-size perovskite modules. Extending the NREL Cell and Module Performance (CMP) group’s steady-state performance calibration protocol (i.e., Asymptotic PMAX Scan) for perovskite cells to modules, we justify the necessity of reporting steady-state efficiencies for perovskite cells and discuss the challenges of applying this protocol to modules. We also present our protocol for Maximum Power Point Tracking (MPPT), which is a technique often used for performance calibration of perovskite cells and modules, and show a comparison between MPPT and Asymptotic PMAX. Using MPPT we demonstrate the interplay between metastability and degradation in perovskite modules, and emphasize the necessity to develop preconditioning protocols for stabilizing these devices. Our aim is to promote development of consensus protocols for performance calibration of perovskite modules, and to advance their credible power ratings, which will be beneficial to the growth of perovskite technology in the PV market.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"50 1","pages":"0367-0371"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89479785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518693
Maryam Mahmoudi Koutenaei, Thanh T. Nguyen, T. Vu, S. Paudyal
The computational challenge in solving dynamic models of power distribution grids increases with high penetration of distributed photovoltaic (PV) systems. IEEE-1547 requires smart PV inverters to provide dynamic volt-var and volt-watt support functions, which motivates solving dynamics of large distribution grids with multiple distributed PVs. The existing dynamic models of PV systems are overly detailed and computationally intractable for solving distribution grid dynamics with a large number of distributed PVs. In this work, a simplified average model and a phasor-based model of a two-stage single-phase smart PV system are developed and compared with the existing average and detailed models in literature. The results show remarkably fast performance from the proposed phasor-based and simplified average models of PVs, while sufficiently capturing necessary volt-var and volt-watt dynamics.
{"title":"Phasor and Simplified Average Models of Two-Stage Single-Phase PV System","authors":"Maryam Mahmoudi Koutenaei, Thanh T. Nguyen, T. Vu, S. Paudyal","doi":"10.1109/PVSC43889.2021.9518693","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518693","url":null,"abstract":"The computational challenge in solving dynamic models of power distribution grids increases with high penetration of distributed photovoltaic (PV) systems. IEEE-1547 requires smart PV inverters to provide dynamic volt-var and volt-watt support functions, which motivates solving dynamics of large distribution grids with multiple distributed PVs. The existing dynamic models of PV systems are overly detailed and computationally intractable for solving distribution grid dynamics with a large number of distributed PVs. In this work, a simplified average model and a phasor-based model of a two-stage single-phase smart PV system are developed and compared with the existing average and detailed models in literature. The results show remarkably fast performance from the proposed phasor-based and simplified average models of PVs, while sufficiently capturing necessary volt-var and volt-watt dynamics.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"2569-2574"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90839706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9519043
Jawad Ahmad Jalal, A. Ray, I. Mukhopadhyay, A. Desai
PV industry continues to search for opportunities to reduce the losses associated with site condition, designing and execution of the system. In this paper, the characteristics and behavior of fundamental parameters like Voltage, Current and Power for crystalline and thin film technologies are investigated under real different conditions of winter and summer seasons and compared with similar ideal system installed at Latitude: 23.15347; Longitude: 72.669309, to determine their comparative performance characteristics in real, outdoor conditions. We interpret our observations with practical analysis based on the results of the field measurement. Based on the research we can say that in winter condition the power output affects between 4 to 6 % in Poly crystalline based Solar PV system compare to thin film based system. Performance Ratio (PR) of REC make polycrystalline Si modules found to show 28% lower than ideal crystalline module and 32 % lower than Thin film Technology. This loss is due to Non Standard Degradation, PID effect, Snail trail, Micro-crack etc. for typical utility-scale projects in India. The thin film solar PV generates 5% higher energy compared to ideal crystalline system due to higher diffuse radiation in winter, and in summer, it can be affected less than 2% which has huge impact on annual power generation.
{"title":"Performance comparison of crystalline and thin film PV Technology: Observations at Utility scale Solar PV Plants under A high solar resource in western India","authors":"Jawad Ahmad Jalal, A. Ray, I. Mukhopadhyay, A. Desai","doi":"10.1109/PVSC43889.2021.9519043","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9519043","url":null,"abstract":"PV industry continues to search for opportunities to reduce the losses associated with site condition, designing and execution of the system. In this paper, the characteristics and behavior of fundamental parameters like Voltage, Current and Power for crystalline and thin film technologies are investigated under real different conditions of winter and summer seasons and compared with similar ideal system installed at Latitude: 23.15347; Longitude: 72.669309, to determine their comparative performance characteristics in real, outdoor conditions. We interpret our observations with practical analysis based on the results of the field measurement. Based on the research we can say that in winter condition the power output affects between 4 to 6 % in Poly crystalline based Solar PV system compare to thin film based system. Performance Ratio (PR) of REC make polycrystalline Si modules found to show 28% lower than ideal crystalline module and 32 % lower than Thin film Technology. This loss is due to Non Standard Degradation, PID effect, Snail trail, Micro-crack etc. for typical utility-scale projects in India. The thin film solar PV generates 5% higher energy compared to ideal crystalline system due to higher diffuse radiation in winter, and in summer, it can be affected less than 2% which has huge impact on annual power generation.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"2382-2385"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90845434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9519063
Daniel Alvarez Mira, Martin Bartholomäus, P. Poulsen, S. Spataru
Measuring horizon shading and modeling available irradiance at a prospective site is necessary for accurate estimation of the energy yield of photovoltaic (PV) systems, as well as the expected operation and availability of PV powered products. Fisheye sky imaging is a relatively simple approach to characterize the surrounding horizon, however it's accuracy in estimating the shading loss on short timescales is not well quantified in the literature. In this work we evaluate the shade irradiance loss estimation accuracy of a horizon shading model based on fisheye sky images compared to actual local irradiance measurements from the site of interest. The results show that small errors in he horizon line estimation can lead to high irradiance estimation errors, for short timescales. However, these are mostly averaged out if the sampling period is 15 minutes or higher. The horizon shading maps obtained both with a commercial shading analysis tool, as well as self-calculated from raw fisheye images, tend to overestimating the direct beam shading and small relative errors are observed. Furthermore, ground reflected irradiance has a great influence on vertical surfaces, which was not accounted for in this work.
{"title":"Accuracy Evaluation of Horizon Shading Estimation Based on Fisheye Sky Imaging","authors":"Daniel Alvarez Mira, Martin Bartholomäus, P. Poulsen, S. Spataru","doi":"10.1109/PVSC43889.2021.9519063","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9519063","url":null,"abstract":"Measuring horizon shading and modeling available irradiance at a prospective site is necessary for accurate estimation of the energy yield of photovoltaic (PV) systems, as well as the expected operation and availability of PV powered products. Fisheye sky imaging is a relatively simple approach to characterize the surrounding horizon, however it's accuracy in estimating the shading loss on short timescales is not well quantified in the literature. In this work we evaluate the shade irradiance loss estimation accuracy of a horizon shading model based on fisheye sky images compared to actual local irradiance measurements from the site of interest. The results show that small errors in he horizon line estimation can lead to high irradiance estimation errors, for short timescales. However, these are mostly averaged out if the sampling period is 15 minutes or higher. The horizon shading maps obtained both with a commercial shading analysis tool, as well as self-calculated from raw fisheye images, tend to overestimating the direct beam shading and small relative errors are observed. Furthermore, ground reflected irradiance has a great influence on vertical surfaces, which was not accounted for in this work.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"27 1","pages":"2052-2059"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90522016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518628
Ying-Yuan Huang, Aditi Jain, Wook-Jin Choi, Keeya Madani, Y. Ok, A. Rohatgi
Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOPCon). This design enables the use of thicker TOPCon (>100nm) on the front for traditional screen-printed contacts without incurring metal-induced damage, high parasitic absorption loss, and compromise in lateral transport or carrier collection on the front. Rear junction design with appropriate bulk lifetime and resistivity combination eliminate the need for heavy doping in the front field region because carriers can flow through the bulk Si without appreciable FF loss. High VOC is maintained because high-quality Si surface passivation in the field region by Al2O3/SiN gives J0 comparable to the TOPCon. Our device modeling specifies the practically achievable properties and parameters for each region, including full area rear p-TOPCon, selective area front n-TOPCon, bulk and contacts, to achieve 25.4% efficiency screen-printed bifacial rear junction selective TOPCon cells.
{"title":"Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front","authors":"Ying-Yuan Huang, Aditi Jain, Wook-Jin Choi, Keeya Madani, Y. Ok, A. Rohatgi","doi":"10.1109/PVSC43889.2021.9518628","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518628","url":null,"abstract":"Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOPCon). This design enables the use of thicker TOPCon (>100nm) on the front for traditional screen-printed contacts without incurring metal-induced damage, high parasitic absorption loss, and compromise in lateral transport or carrier collection on the front. Rear junction design with appropriate bulk lifetime and resistivity combination eliminate the need for heavy doping in the front field region because carriers can flow through the bulk Si without appreciable FF loss. High VOC is maintained because high-quality Si surface passivation in the field region by Al2O3/SiN gives J0 comparable to the TOPCon. Our device modeling specifies the practically achievable properties and parameters for each region, including full area rear p-TOPCon, selective area front n-TOPCon, bulk and contacts, to achieve 25.4% efficiency screen-printed bifacial rear junction selective TOPCon cells.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"77 1","pages":"1971-1976"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76847783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518838
D. Buldu, J. de Wild, T. Kohl, G. Birant, G. Brammertz, M. Meuris, J. Poortmans, B. Vermang
A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se2 thin film solar cells. In this multi-stack design, a thin HfOx layer was used to protect a thicker AlOx layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.
{"title":"A multi-stack Al2O3/HfO2 design with contact openings for front surface of Cu(In,Ga)Se2 solar cells","authors":"D. Buldu, J. de Wild, T. Kohl, G. Birant, G. Brammertz, M. Meuris, J. Poortmans, B. Vermang","doi":"10.1109/PVSC43889.2021.9518838","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518838","url":null,"abstract":"A new multi-stack approach with contact openings was investigated for front surface of Cu(In,Ga)Se2 thin film solar cells. In this multi-stack design, a thin HfOx layer was used to protect a thicker AlOx layer from the presence of ammonia in the chemical bath deposition. The contact openings were created by using alkali solution. The lifetime decay was improved by implementing multi-stack passivation layer between CIGS/buffer layer interface. It was shown that open circuit voltage was increased by up to 30mV.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"13 1","pages":"1176-1178"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78272240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518644
Davi Fébba, Vincent Paratte, L. Antognini, Julie Dréon, Julien Hurni, J. Thomet, C. Ballif, M. Boccard
This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity, and activation energy were found to significantly change between Sn and Ge-rich samples, but poor performance was observed when ZTGN layers were employed as electron-selective contacts for SHJ solar cells, with similar results despite changes in material properties. A non-moving Fermi level around mid-gap silicon, strong limitation due to series resistance, and poor conductivity of Ge-rich samples can account for the observed behavior. Doping of Ge-rich ZTGN appears thus necessary to build efficient devices with a ZTGN contact layer. Using an ex-situ phosphine palsma followed by annealing did not prove successful to this regard, making in-situ doping probably necessary.
{"title":"ZnSnxGe1-xN2 as electron-selective contact for silicon heterojunction solar cells","authors":"Davi Fébba, Vincent Paratte, L. Antognini, Julie Dréon, Julien Hurni, J. Thomet, C. Ballif, M. Boccard","doi":"10.1109/PVSC43889.2021.9518644","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518644","url":null,"abstract":"This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity, and activation energy were found to significantly change between Sn and Ge-rich samples, but poor performance was observed when ZTGN layers were employed as electron-selective contacts for SHJ solar cells, with similar results despite changes in material properties. A non-moving Fermi level around mid-gap silicon, strong limitation due to series resistance, and poor conductivity of Ge-rich samples can account for the observed behavior. Doping of Ge-rich ZTGN appears thus necessary to build efficient devices with a ZTGN contact layer. Using an ex-situ phosphine palsma followed by annealing did not prove successful to this regard, making in-situ doping probably necessary.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"36 1","pages":"0854-0857"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75368442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518578
Deewakar Poudel, T. Lepetit, Benjamin Belfore, Elizabeth Palmiotti, T. Ashrafee, S. Karki, G. Rajan, A. Rockett, N. Barreau, S. Marsillac
Cu(In,Ga)Se2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2nd and 3rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Overall, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.
{"title":"Studying the Recrystallization of Cu(InGa)Se2 Semiconductor Thin Films by Silver Bromide In-situ Treatment","authors":"Deewakar Poudel, T. Lepetit, Benjamin Belfore, Elizabeth Palmiotti, T. Ashrafee, S. Karki, G. Rajan, A. Rockett, N. Barreau, S. Marsillac","doi":"10.1109/PVSC43889.2021.9518578","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518578","url":null,"abstract":"Cu(In,Ga)Se2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2nd and 3rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Overall, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"8 1","pages":"2307-2311"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78478715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：