Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518732
Fang Li, S. Tatapudi, G. Tamizhmani
Emerging photovoltaic (PV) technologies with inexpensive cell interconnect material will help to further reduce the manufacturing costs of solar cells. Aluminum foil has been explored as an inexpensive alternative material replacing silver and copper interconnect materials in the IBC (interdigitated back contact) cells or as moisture barrier in the backsheet. It is critical to assess the compatibility of the aluminum foil with dominant encapsulant types so the reliability of PV modules with aluminum interconnect is not compromised over decades of exposure in the field. In this work, through extended accelerated stress tests, we have evaluated the compatibility of aluminum foil with two encapsulant types, EVA (ethylene vinyl acetate) and POE (polyolefin elastomer). This aluminum/encapsulant compatibility evaluation was performed using both glass/glass and glass/backsheet constructions. The extended accelerated stress tests used in this work were UV (300 kWh/m2) and damp heat (1500 hours). Based on the after-stress optical and performance parameters of the mini-modules, it is demonstrated that the POE encapsulant is more compatible with aluminum foil compared to the EVA encapsulant irrespective of the substrate type, glass or backsheet.
{"title":"Preliminary Evaluation of Aluminum Foil Compatibility with EVA and POE Encapsulants","authors":"Fang Li, S. Tatapudi, G. Tamizhmani","doi":"10.1109/PVSC43889.2021.9518732","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518732","url":null,"abstract":"Emerging photovoltaic (PV) technologies with inexpensive cell interconnect material will help to further reduce the manufacturing costs of solar cells. Aluminum foil has been explored as an inexpensive alternative material replacing silver and copper interconnect materials in the IBC (interdigitated back contact) cells or as moisture barrier in the backsheet. It is critical to assess the compatibility of the aluminum foil with dominant encapsulant types so the reliability of PV modules with aluminum interconnect is not compromised over decades of exposure in the field. In this work, through extended accelerated stress tests, we have evaluated the compatibility of aluminum foil with two encapsulant types, EVA (ethylene vinyl acetate) and POE (polyolefin elastomer). This aluminum/encapsulant compatibility evaluation was performed using both glass/glass and glass/backsheet constructions. The extended accelerated stress tests used in this work were UV (300 kWh/m2) and damp heat (1500 hours). Based on the after-stress optical and performance parameters of the mini-modules, it is demonstrated that the POE encapsulant is more compatible with aluminum foil compared to the EVA encapsulant irrespective of the substrate type, glass or backsheet.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"1919-1922"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84512507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518619
N. Kopidakis, P. Ndione, K. Lu, Greg Horrner, D. Friedman
Measurements of the spectral response of cells in a PV module can provide important insight into the physics of the device and are also needed for the accurate calibration of the performance of these devices using solar simulators. While techniques for measuring the spectral response of PV cells are well established, measurement of the spectral response of all cells in a module is not straightforward since in this case one has electrical access to a string of cells and not to cells individually. Here we present a new approach for testing the spectral response of individual cells in silicon modules that allows for the fast mapping of the response at different locations of the module. We show that in some cases the spectral response of different cells in a module can vary considerably and propose an underlying mechanism for this variation. We also discuss the implications of this observation for the uncertainty of the spectral correction and of the ISC calibration using a solar simulator.
{"title":"Distribution of the spectral response of cells in silicon modules – mechanisms and implications","authors":"N. Kopidakis, P. Ndione, K. Lu, Greg Horrner, D. Friedman","doi":"10.1109/PVSC43889.2021.9518619","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518619","url":null,"abstract":"Measurements of the spectral response of cells in a PV module can provide important insight into the physics of the device and are also needed for the accurate calibration of the performance of these devices using solar simulators. While techniques for measuring the spectral response of PV cells are well established, measurement of the spectral response of all cells in a module is not straightforward since in this case one has electrical access to a string of cells and not to cells individually. Here we present a new approach for testing the spectral response of individual cells in silicon modules that allows for the fast mapping of the response at different locations of the module. We show that in some cases the spectral response of different cells in a module can vary considerably and propose an underlying mechanism for this variation. We also discuss the implications of this observation for the uncertainty of the spectral correction and of the ISC calibration using a solar simulator.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"22 1","pages":"1659-1662"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85316827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9519035
Z. Teh, R. Patterson, Stefan W. Tabernig, Abhinav Sharma, Shujuan Huang
PbS/CdS core-shell quantum dots (QD) with diameters of <4 nm have previously only been demonstrated with the formation of a monolayer of pure phase CdS shell through cation exchange. The lattice mismatch between the zincblende CdS shell and the rocksalt PbS core limits the optimal thickness of the shell to 1 monolayer to prevent defect formation at the coreshell interface in order to maximize photoluminescence quantum yield (PLQY) and lifetime. This work demonstrates for the first time the formation of a Cd-rich Pb0.35Cd0.65S alloyed core-shell QD through cation exchange with a record long exciton lifetime of 3.8 µs and much-improved PLQY.
{"title":"Near-infrared bandgap Cd-rich PbxCd1-xS quantum dot with record long exciton lifetime","authors":"Z. Teh, R. Patterson, Stefan W. Tabernig, Abhinav Sharma, Shujuan Huang","doi":"10.1109/PVSC43889.2021.9519035","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9519035","url":null,"abstract":"PbS/CdS core-shell quantum dots (QD) with diameters of <4 nm have previously only been demonstrated with the formation of a monolayer of pure phase CdS shell through cation exchange. The lattice mismatch between the zincblende CdS shell and the rocksalt PbS core limits the optimal thickness of the shell to 1 monolayer to prevent defect formation at the coreshell interface in order to maximize photoluminescence quantum yield (PLQY) and lifetime. This work demonstrates for the first time the formation of a Cd-rich Pb0.35Cd0.65S alloyed core-shell QD through cation exchange with a record long exciton lifetime of 3.8 µs and much-improved PLQY.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"121 1","pages":"2475-2477"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82045032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518420
Stefan Wil Tabernig, Lin Yuan, Yijun Gao, Z. Teh, Andrea Cordaro, Andreas Pusch, R. Patterson, Shujuan Huang, A. Polman
One of the most interesting - but often underappreciated - absorber materials for solar cells are PbS quantum dot (QD) layers. In principle, the tuneable bandgap, that derives from quantum confinement, together with strong absorption, which allows for thin and flexible layers, as well as the ease of fabrication in form of solution deposition, are each strong arguments for thin-film-QD absorber layer based solar cells. However, so far, those advantages have been met with notable disadvantages which have hindered a faster and more enthusiastic uptake of QD absorber layers in the scientific community. A major hindrance is the low diffusion length of charge carriers in the absorber, limiting the maximum possible absorber thickness, thus requiring an unsatisfying compromise between short-circuit current density (J SC ) and open-circuit voltage (V OC ). In this work, we lay out a path on how to address this issue, by introducing a 3-dimensionally structured p-n heterojunction ( Fig. 1 ) that can increase charge carrier generation, as well as improve extraction in comparison to flat cell geometries.
{"title":"Carrier collection in optically resonant nanostructures for quantum dot solar cells","authors":"Stefan Wil Tabernig, Lin Yuan, Yijun Gao, Z. Teh, Andrea Cordaro, Andreas Pusch, R. Patterson, Shujuan Huang, A. Polman","doi":"10.1109/PVSC43889.2021.9518420","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518420","url":null,"abstract":"One of the most interesting - but often underappreciated - absorber materials for solar cells are PbS quantum dot (QD) layers. In principle, the tuneable bandgap, that derives from quantum confinement, together with strong absorption, which allows for thin and flexible layers, as well as the ease of fabrication in form of solution deposition, are each strong arguments for thin-film-QD absorber layer based solar cells. However, so far, those advantages have been met with notable disadvantages which have hindered a faster and more enthusiastic uptake of QD absorber layers in the scientific community. A major hindrance is the low diffusion length of charge carriers in the absorber, limiting the maximum possible absorber thickness, thus requiring an unsatisfying compromise between short-circuit current density (J SC ) and open-circuit voltage (V OC ). In this work, we lay out a path on how to address this issue, by introducing a 3-dimensionally structured p-n heterojunction ( Fig. 1 ) that can increase charge carrier generation, as well as improve extraction in comparison to flat cell geometries.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"24 1","pages":"0803-0805"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83685777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518946
A. Paszuk, M. Nandy, P. Kleinschmidt, T. Hannappel
For high quality epitaxial III-V-on-Ge, utilized e.g. for highly-efficient III-V/Ge(100) multijunction solar cells, the Ge(100) substrate surface must be prepared with double-atomic steps in order to avoid anti-phase boundaries in the III-V buffer. Preparation of these surfaces was studied in detail under As- and GaAs-rich CVD reactor conditions. Nucleation of III-P buffers, however, should be carried out in P-rich ambience. Here, we study the interaction of P with vicinal Ge(100):As surfaces in realistic, GaAs-rich coated CVD reactors. We combine optical in situ spectroscopy with surface science techniques in ultra-high vacuum. We demonstrate that P-modified Ge(100):As surfaces remain prevalently (1×2) reconstructed and their surface structure depends on the molar flow of phosphorus precursor.
{"title":"In situ monitoring of As-P exchange on Ge(100) surfaces in GaAs-rich CVD reactors for low-defect III-V multijunction solar cells","authors":"A. Paszuk, M. Nandy, P. Kleinschmidt, T. Hannappel","doi":"10.1109/PVSC43889.2021.9518946","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518946","url":null,"abstract":"For high quality epitaxial III-V-on-Ge, utilized e.g. for highly-efficient III-V/Ge(100) multijunction solar cells, the Ge(100) substrate surface must be prepared with double-atomic steps in order to avoid anti-phase boundaries in the III-V buffer. Preparation of these surfaces was studied in detail under As- and GaAs-rich CVD reactor conditions. Nucleation of III-P buffers, however, should be carried out in P-rich ambience. Here, we study the interaction of P with vicinal Ge(100):As surfaces in realistic, GaAs-rich coated CVD reactors. We combine optical in situ spectroscopy with surface science techniques in ultra-high vacuum. We demonstrate that P-modified Ge(100):As surfaces remain prevalently (1×2) reconstructed and their surface structure depends on the molar flow of phosphorus precursor.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"29 1","pages":"0339-0341"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82421169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518541
A. K. V. de Oliveira, M. K. Bracht, A. P. Melo, R. Lamberts, R. Rüther
This paper aims to analyze different methods and software for the orthomosaic reconstruction of aerial infrared thermography (aIRT) images of a 3 MW PV plant in Brazil. Results showed that the method could improve the process of inspections of PV plants through aerial imagery, facilitating the localization of faults. Some challenges observed include the long duration of the flights caused by the high overlapping of images required, and the distortions presented in the resulting orthomosaics. The combination of the method with artificial intelligence algorithms that detect faults in aIRT images is a fast and effective tool to inspect PV power plants.
{"title":"Evaluation of Faults in a Photovoltaic Power Plant using Orthomosaics based on Aerial Infrared Thermography","authors":"A. K. V. de Oliveira, M. K. Bracht, A. P. Melo, R. Lamberts, R. Rüther","doi":"10.1109/PVSC43889.2021.9518541","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518541","url":null,"abstract":"This paper aims to analyze different methods and software for the orthomosaic reconstruction of aerial infrared thermography (aIRT) images of a 3 MW PV plant in Brazil. Results showed that the method could improve the process of inspections of PV plants through aerial imagery, facilitating the localization of faults. Some challenges observed include the long duration of the flights caused by the high overlapping of images required, and the distortions presented in the resulting orthomosaics. The combination of the method with artificial intelligence algorithms that detect faults in aIRT images is a fast and effective tool to inspect PV power plants.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"50 1","pages":"2604-2610"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84042527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518452
Sushrut Thakar, V. Vittal, R. Ayyanar
Traditionally, transmission and distribution system dynamic simulations are performed independently. However, dynamic co-simulation of transmission-distribution systems can be beneficial in analyzing distribution systems with high penetration of distributed renewable resources. The authors describe a framework for conducting transmission-distribution dynamic co-simulation (TDDS). A model of a real network including detailed models of solar photovoltaic units in the distribution system is constructed. The initial operating point of the network is validated against field measurements. The TDDS tool is used to simulate a single line-to-ground fault on the distribution system, highlighting the need for conducting transmission-distribution co-simulations.
{"title":"An Integrated Transmission-Distribution Co-Simulation for a Distribution System with High Renewable Penetration","authors":"Sushrut Thakar, V. Vittal, R. Ayyanar","doi":"10.1109/PVSC43889.2021.9518452","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518452","url":null,"abstract":"Traditionally, transmission and distribution system dynamic simulations are performed independently. However, dynamic co-simulation of transmission-distribution systems can be beneficial in analyzing distribution systems with high penetration of distributed renewable resources. The authors describe a framework for conducting transmission-distribution dynamic co-simulation (TDDS). A model of a real network including detailed models of solar photovoltaic units in the distribution system is constructed. The initial operating point of the network is validated against field measurements. The TDDS tool is used to simulate a single line-to-ground fault on the distribution system, highlighting the need for conducting transmission-distribution co-simulations.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"79 1","pages":"0672-0679"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84087459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518830
Niranjan Kumar, T. Walker, T. Nietzold, M. Stuckelberger, E. Colegrove, B. Lai, A. R. Shaik, M. Bertoni
Copper is a traditional dopant for many types of polycrystalline thin-film CdTe photovoltaic devices. However, Cu can easily distribute through the depth and breadth of the device, segregating at interfaces or grain boundaries and leading to metastability of the device. Directly correlating Cu-related defect species to the local (i.e. nanoscale) charge transport in CdTe devices remains challenging due to relatively low Cu concentrations in the CdTe layer. Using nanoscale X-ray microscopy, we simultaneously probe both the elemental copper distribution and electrical performance of the device in cross-section. Complementary charge transport modelling delineates the possible defect distributions that can exist under low and high Cu loading, and how these defects interact with charge carriers at different depths of the device.
{"title":"Modelling Cross-section Current Collection in Cu-Doped CdTe using PyCDTS","authors":"Niranjan Kumar, T. Walker, T. Nietzold, M. Stuckelberger, E. Colegrove, B. Lai, A. R. Shaik, M. Bertoni","doi":"10.1109/PVSC43889.2021.9518830","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518830","url":null,"abstract":"Copper is a traditional dopant for many types of polycrystalline thin-film CdTe photovoltaic devices. However, Cu can easily distribute through the depth and breadth of the device, segregating at interfaces or grain boundaries and leading to metastability of the device. Directly correlating Cu-related defect species to the local (i.e. nanoscale) charge transport in CdTe devices remains challenging due to relatively low Cu concentrations in the CdTe layer. Using nanoscale X-ray microscopy, we simultaneously probe both the elemental copper distribution and electrical performance of the device in cross-section. Complementary charge transport modelling delineates the possible defect distributions that can exist under low and high Cu loading, and how these defects interact with charge carriers at different depths of the device.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"39 1","pages":"2124-2127"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80514310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518867
Hieu T. Nguyen, D E Macdonald
A measured luminescence spectrum is a complex combination of numerous phenomena occurring in both silicon wafers and measurement equipment. The emitted spectrum itself is determined by the intrinsic properties of silicon, defects and impurities in the host material, experimental conditions, and surface optics. The detected spectrum is then affected by the spectral responses of the luminescence spectroscopy/imaging system. However, by systematically controlling and monitoring the parameters which can potentially affect the detected spectra, certain properties of silicon wafers and solar cells can be evaluated. This paper reviews some basic mechanisms of luminescence phenomena in silicon wafers and solar cells. This is essential for understanding the rich information embedded in the captured PL spectra, based on which various applications in silicon photovoltaics can be established.
{"title":"Mechanisms of luminescence in silicon photovoltaics","authors":"Hieu T. Nguyen, D E Macdonald","doi":"10.1109/PVSC43889.2021.9518867","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518867","url":null,"abstract":"A measured luminescence spectrum is a complex combination of numerous phenomena occurring in both silicon wafers and measurement equipment. The emitted spectrum itself is determined by the intrinsic properties of silicon, defects and impurities in the host material, experimental conditions, and surface optics. The detected spectrum is then affected by the spectral responses of the luminescence spectroscopy/imaging system. However, by systematically controlling and monitoring the parameters which can potentially affect the detected spectra, certain properties of silicon wafers and solar cells can be evaluated. This paper reviews some basic mechanisms of luminescence phenomena in silicon wafers and solar cells. This is essential for understanding the rich information embedded in the captured PL spectra, based on which various applications in silicon photovoltaics can be established.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"48 1","pages":"0044-0047"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80305416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518750
H. Renuka, B. Venkataraman, K. Ramaswamy, Souvik Kundu, S. Goel
Herein, this work highlights the influence of chromium substitution in BiFeO3 (BFO) along with the roles engaged by electron transport (ETL) and hole transport layer (HTL) in the p-i-n heterostructure. Investigation into the structural and optical properties reveal that Cr doping reduces the grain size, increases the absorbance capabilities and reduces the bandgap of BFO to 2.2 eV. Furthermore, the ETL and HTL layers ameliorated the electrical properties and boosted the PV performance to 0.6 V and 0.76 mA/cm2 with a remarkable increment up to 70 % in efficacy. The ETL and HTL play a key role in curbing the dark current and counters the diode formation, thereby enhancing the carrier extraction properties of the cell. Overall, the three fabricated devices, namely, standalone undoped BFO, Cr-doped BFO and NiO/BFCrO/WS2 heterojunction solar cells were contrasted and compared for ameliorated PV properties.
{"title":"A Study on the effect of Cr doping on the Structural, Optical and Photovoltaic Properties of BFO based Heterostructures","authors":"H. Renuka, B. Venkataraman, K. Ramaswamy, Souvik Kundu, S. Goel","doi":"10.1109/PVSC43889.2021.9518750","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518750","url":null,"abstract":"Herein, this work highlights the influence of chromium substitution in BiFeO3 (BFO) along with the roles engaged by electron transport (ETL) and hole transport layer (HTL) in the p-i-n heterostructure. Investigation into the structural and optical properties reveal that Cr doping reduces the grain size, increases the absorbance capabilities and reduces the bandgap of BFO to 2.2 eV. Furthermore, the ETL and HTL layers ameliorated the electrical properties and boosted the PV performance to 0.6 V and 0.76 mA/cm2 with a remarkable increment up to 70 % in efficacy. The ETL and HTL play a key role in curbing the dark current and counters the diode formation, thereby enhancing the carrier extraction properties of the cell. Overall, the three fabricated devices, namely, standalone undoped BFO, Cr-doped BFO and NiO/BFCrO/WS2 heterojunction solar cells were contrasted and compared for ameliorated PV properties.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"284 1","pages":"1182-1186"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83112957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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