Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487155
Zhe Yang, P. Williford, Fred Wang, Utkarsh Raheja, Jing Xu, Xiaoqing Song, P. Cairoli
This work evaluates the overcurrent capability of 600V Gallium Nitride (GaN) Gate Injection Transistor (GIT) under different time durations and initial junction temperatures in a non-destructive approach. Setups and procedures are established to control drain current, time duration and junction temperature. The degradation of the device is examined after each overcurrent test. Gate-to-source voltage, drain-to-source voltage and drain current are measured for each test. Based on the test results, maximum withstand current, It-curve, I2t-curve, and maximum withstand energy are determined for 600V GaN GIT. The results can be applied to the design of GaN-based converters for transient and overload conditions, as well as dc solid-state circuit breakers.
本研究以非破坏性方法评估了600V氮化镓(GaN)栅注入晶体管(GIT)在不同时间持续时间和初始结温下的过流能力。建立了控制漏极电流、时间持续时间和结温的装置和程序。在每次过流试验后检查器件的退化情况。门源电压，漏极源电压和漏极电流测量每个测试。根据测试结果，确定了600V GaN GIT的最大耐受电流、it曲线、i2t曲线和最大耐受能量。研究结果可应用于瞬态和过载条件下基于gan的变换器以及直流固态断路器的设计。
{"title":"Overcurrent Capability Evaluation of 600 V GaN GITs under Various Time Durations","authors":"Zhe Yang, P. Williford, Fred Wang, Utkarsh Raheja, Jing Xu, Xiaoqing Song, P. Cairoli","doi":"10.1109/APEC42165.2021.9487155","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487155","url":null,"abstract":"This work evaluates the overcurrent capability of 600V Gallium Nitride (GaN) Gate Injection Transistor (GIT) under different time durations and initial junction temperatures in a non-destructive approach. Setups and procedures are established to control drain current, time duration and junction temperature. The degradation of the device is examined after each overcurrent test. Gate-to-source voltage, drain-to-source voltage and drain current are measured for each test. Based on the test results, maximum withstand current, It-curve, I2t-curve, and maximum withstand energy are determined for 600V GaN GIT. The results can be applied to the design of GaN-based converters for transient and overload conditions, as well as dc solid-state circuit breakers.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"13 1","pages":"376-381"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78205024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487062
Zhiyong Xia, J. A. Abu Qahouq, S. Kotru
The miniaturization of power inductor helps to achieve high power density of power converters. The development of on-chip power inductors is an important step towards achieving this goal. A 3-D model for an on-chip power inductor is developed in ANSYS®/Maxwell® software in this paper to facilitate the design of on-chip power inductor with on-chip ferrite core. The effects of air gap variation in the on-chip inductor are evaluated using the 3-D physical model and simulations with the on-chip ferrite core. The tradeoff between high inductance value and high saturation value as a function of the air gap between the ferrite layer and winding layer is evaluated from the model and simulations in order to facilitate the optimization and design before fabrication of the complete device.
{"title":"3-D Physical Model for On-chip Power Inductor Design with Evaluation of Airgap Variation Effect","authors":"Zhiyong Xia, J. A. Abu Qahouq, S. Kotru","doi":"10.1109/APEC42165.2021.9487062","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487062","url":null,"abstract":"The miniaturization of power inductor helps to achieve high power density of power converters. The development of on-chip power inductors is an important step towards achieving this goal. A 3-D model for an on-chip power inductor is developed in ANSYS®/Maxwell® software in this paper to facilitate the design of on-chip power inductor with on-chip ferrite core. The effects of air gap variation in the on-chip inductor are evaluated using the 3-D physical model and simulations with the on-chip ferrite core. The tradeoff between high inductance value and high saturation value as a function of the air gap between the ferrite layer and winding layer is evaluated from the model and simulations in order to facilitate the optimization and design before fabrication of the complete device.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"31 1","pages":"1725-1729"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74429062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487252
Q. Song, Ruizhe Zhang, J. P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang
Surge energy robustness is essential for power semiconductor devices in many power electronics applications, such as automotive powertrains and electrical grids. Si and SiC MOSFETs can dissipate surge energy via avalanche. However, GaN high-electron-mobility-transistor (HEMT) has no avalanche capability. Recent studies have investigated the surge energy robustness of p-gate GaN HEMTs, revealing a capacitive-charging-based withstanding process. The degradation of p-gate GaN HEMT under repetitive surge energy stresses has also been reported. This work, for the first time, studies the repetitive surge energy robustness of a 650-V rated cascode GaN HEMT in the unclamped inductive switching (UIS) test. The cascode GaN HEMT shows a lower failure boundary under the repetitive UIS stress than the one under the single UIS stress. When the surge energy approaches the repetitive failure boundary, devices do not fail immediately but within limited cycles of stress. Devices were found to survive 1 million UIS cycles when the peak UIS voltage is reduced to ~80% of the failure boundary, but show considerable parametric shifts after the repetitive stress, including an on-resistance (RDS(ON)) increase during both forward and reverse conductions, a reduction in the off-state drain leakage current (IDSS), and a negative shift of the drain-to-source capacitance (CDS). These behaviors of device failure and degradation under repetitive UIS stresses can be explained by the buffer trapping accumulation in GaN HEMTs, which may lead to a reduction of the device dynamic breakdown voltage. This physical explanation has also been validated by physics-based TCAD simulation.
{"title":"Robustness of Cascode GaN HEMTs under Repetitive Overvoltage and Surge Energy Stresses","authors":"Q. Song, Ruizhe Zhang, J. P. Kozak, Jingcun Liu, Qiang Li, Yuhao Zhang","doi":"10.1109/APEC42165.2021.9487252","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487252","url":null,"abstract":"Surge energy robustness is essential for power semiconductor devices in many power electronics applications, such as automotive powertrains and electrical grids. Si and SiC MOSFETs can dissipate surge energy via avalanche. However, GaN high-electron-mobility-transistor (HEMT) has no avalanche capability. Recent studies have investigated the surge energy robustness of p-gate GaN HEMTs, revealing a capacitive-charging-based withstanding process. The degradation of p-gate GaN HEMT under repetitive surge energy stresses has also been reported. This work, for the first time, studies the repetitive surge energy robustness of a 650-V rated cascode GaN HEMT in the unclamped inductive switching (UIS) test. The cascode GaN HEMT shows a lower failure boundary under the repetitive UIS stress than the one under the single UIS stress. When the surge energy approaches the repetitive failure boundary, devices do not fail immediately but within limited cycles of stress. Devices were found to survive 1 million UIS cycles when the peak UIS voltage is reduced to ~80% of the failure boundary, but show considerable parametric shifts after the repetitive stress, including an on-resistance (RDS(ON)) increase during both forward and reverse conductions, a reduction in the off-state drain leakage current (IDSS), and a negative shift of the drain-to-source capacitance (CDS). These behaviors of device failure and degradation under repetitive UIS stresses can be explained by the buffer trapping accumulation in GaN HEMTs, which may lead to a reduction of the device dynamic breakdown voltage. This physical explanation has also been validated by physics-based TCAD simulation.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"67 1","pages":"363-369"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76231659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487370
Wen Zhang, Fred Wang, B. Holzinger
Existing current sensors suffer from insufficient measurement bandwidth or large insertion area to continuously monitor the switching transient current of wide-bandgap devices. A combinational Rogowski coil concept is proposed here, where the self-integrating region of a shielded Rogowski coil is combined with its differentiating region. The overall measurement bandwidth is effectively extended by the self-integrating region. The design methodology for the shielded Rogowski coil, especially the parasitic elements and error analysis, is discussed. Finally, a prototype is demonstrated with a sensitivity is 5.0 mΩ and a bandwidth of 200 MHz. The measurement in a SiC power module double pulse shows it can faithfully capture the transient current while introducing little interference.
{"title":"High-Bandwidth Shielded Rogowski Coil Current Sensor for SiC MOSFET Power Module","authors":"Wen Zhang, Fred Wang, B. Holzinger","doi":"10.1109/APEC42165.2021.9487370","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487370","url":null,"abstract":"Existing current sensors suffer from insufficient measurement bandwidth or large insertion area to continuously monitor the switching transient current of wide-bandgap devices. A combinational Rogowski coil concept is proposed here, where the self-integrating region of a shielded Rogowski coil is combined with its differentiating region. The overall measurement bandwidth is effectively extended by the self-integrating region. The design methodology for the shielded Rogowski coil, especially the parasitic elements and error analysis, is discussed. Finally, a prototype is demonstrated with a sensitivity is 5.0 mΩ and a bandwidth of 200 MHz. The measurement in a SiC power module double pulse shows it can faithfully capture the transient current while introducing little interference.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"35 1","pages":"1242-1249"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75692675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487430
Wan Lin Jiang, Samantha Kadee Murray, M. S. Zaman, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases
This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a monolithic half-bridge with integrated fixed-strength gate-drivers. Together, they facilitate on-chip active gate-driving, improving the reliability of GaN power ICs. The blocks were fabricated on separate dies using imec’s 200 V GaN-on-SOI process. A controllable dvDS/dt from 68 V/ns to 112 V/ns at room temperature is achieved using the segmented gate-driver. An oscillation-free vDS switching of the half-bridge at 200 V and 5 MHz is demonstrated through experimental results.
本文介绍了单片GaN半桥解决方案的关键组成部分:1)二值加权数字控制分段栅极驱动器，提供旋转速率控制;2)具有防毛刺功能的高压浮动移电平器;3)集成固定强度栅极驱动器的单片半桥。它们共同促进片上有源栅极驱动，提高GaN功率ic的可靠性。使用imec的200 V GaN-on-SOI工艺在单独的模具上制作块。采用分段栅极驱动器，实现了室温下68v /ns ~ 112v /ns的可控dvd /dt。实验结果证明了该半桥在200v和5mhz下的无振荡vDS开关。
{"title":"Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter","authors":"Wan Lin Jiang, Samantha Kadee Murray, M. S. Zaman, H. De Vleeschouwer, J. Roig, P. Moens, O. Trescases","doi":"10.1109/APEC42165.2021.9487430","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487430","url":null,"abstract":"This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a monolithic half-bridge with integrated fixed-strength gate-drivers. Together, they facilitate on-chip active gate-driving, improving the reliability of GaN power ICs. The blocks were fabricated on separate dies using imec’s 200 V GaN-on-SOI process. A controllable dvDS/dt from 68 V/ns to 112 V/ns at room temperature is achieved using the segmented gate-driver. An oscillation-free vDS switching of the half-bridge at 200 V and 5 MHz is demonstrated through experimental results.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"1 1","pages":"728-734"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79818878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487038
Wenkang Gong, S. Pan, Wenqiang Lin, Jinwu Gong, Yuan Shang
In order to reduce the number of auxiliary inductors and improve the load adaptability of the auxiliary resonant commutation pole soft-switching inverter(ARCP) inverter, a novel auxiliary resonant commutation pole soft-switching inverter is proposed, which is characterized by simple structure and low power loss. The proposed inverter only contains two auxiliary commutation inductors. And the commutation processes of the two-phase main switches are simultaneously assisted by the same auxiliary inductor. All main switches in the proposed inverter can achieve zero voltage switching, and all auxiliary switches can achieve zero current switching. The proposed inverter has a simpler structure, higher efficiency and better load adaptability than the ARCP inverter. The effectiveness of the proposed inverter is verified by simulation and the experiment results.
{"title":"A Novel Auxiliary Resonant Commutated Pole Soft-switching Inverter","authors":"Wenkang Gong, S. Pan, Wenqiang Lin, Jinwu Gong, Yuan Shang","doi":"10.1109/APEC42165.2021.9487038","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487038","url":null,"abstract":"In order to reduce the number of auxiliary inductors and improve the load adaptability of the auxiliary resonant commutation pole soft-switching inverter(ARCP) inverter, a novel auxiliary resonant commutation pole soft-switching inverter is proposed, which is characterized by simple structure and low power loss. The proposed inverter only contains two auxiliary commutation inductors. And the commutation processes of the two-phase main switches are simultaneously assisted by the same auxiliary inductor. All main switches in the proposed inverter can achieve zero voltage switching, and all auxiliary switches can achieve zero current switching. The proposed inverter has a simpler structure, higher efficiency and better load adaptability than the ARCP inverter. The effectiveness of the proposed inverter is verified by simulation and the experiment results.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"60 1","pages":"2166-2170"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80463096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487420
Abu Shahir Md. Khalid Hasan, I. Bhogaraju, M. Farasat, Michael A. Malisoff
A stabilizing control scheme based on a Lyapunov function is proposed for wireless power transfer (or WPT) systems. A state-space model of the WPT system is developed and the Lyapunov function is formulated based on an energy equation of the system involving state variables. The internal resistance of a battery varies during charge and discharge. Therefore, if a WPT system is used to charge a battery, its output load will vary. Furthermore, the coupling coefficient between the transmitter (primary) and receiver (secondary) coils decreases when they are misaligned. Comparative case studies are conducted to verify the efficacy of the proposed controller in maintaining stability of the WPT system under load variation and acute misalignment of transmitter and receiver coils.
{"title":"Lyapunov Function-Based Stabilizing Control Scheme for Wireless Power Transfer Systems with LCC Compensation Network","authors":"Abu Shahir Md. Khalid Hasan, I. Bhogaraju, M. Farasat, Michael A. Malisoff","doi":"10.1109/APEC42165.2021.9487420","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487420","url":null,"abstract":"A stabilizing control scheme based on a Lyapunov function is proposed for wireless power transfer (or WPT) systems. A state-space model of the WPT system is developed and the Lyapunov function is formulated based on an energy equation of the system involving state variables. The internal resistance of a battery varies during charge and discharge. Therefore, if a WPT system is used to charge a battery, its output load will vary. Furthermore, the coupling coefficient between the transmitter (primary) and receiver (secondary) coils decreases when they are misaligned. Comparative case studies are conducted to verify the efficacy of the proposed controller in maintaining stability of the WPT system under load variation and acute misalignment of transmitter and receiver coils.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"32 1","pages":"694-699"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81034384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487183
Xugang Ke, D. Brian Ma
To achieve a fast load transient response time in a switching power converter, constant on-time (COT) hysteretic mode control has been reported recently. However, due to the limitations on fixed on-time and mandatory minimum off-time, sluggish response and large voltage over-/undershoot are severe during extreme load transient scenarios. This paper presents a load transient enhance scheme which achieves adaptive on-time (AOT) transient response promptly and within one switching cycle, through instantaneous load change (∆IO) sensing technique. Based on the AOT control, a single-stage Gallium Nitride (GaN) based DC-DC converter is designed. Because a GaN switch inherently has no body diode and thus shows a high reverse conduction voltage, the efficiency is degraded with excessively long dead time (tdead). Accordingly, a sample-and-hold (S/H) based closed-loop dead time control is proposed to regulate tdead adaptively according to instantaneous input voltage (VIN) and IO. The converter is implemented using a 0.35-µm high voltage (HV) BCD process, accomplishing the DC-DC voltage conversion from 40 to 1.2V at 5MHz. In response to load steps between 0.5A and 10A, it achieves a 49mV/29mV VO undershoot/overshoot within one switching cycle. Thanks to the adaptive dead time control, the efficiency is improved by 4.8% at light load and 1.5% at heavy load, respectively, with a peak value of 89.5%.
{"title":"An Automotive-Use 5MHz, 40V to 1.2V, Single-Stage AOT GaN DC-DC Converter with One-Cycle Transient Response and Load-Adaptive Dead Time Control","authors":"Xugang Ke, D. Brian Ma","doi":"10.1109/APEC42165.2021.9487183","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487183","url":null,"abstract":"To achieve a fast load transient response time in a switching power converter, constant on-time (COT) hysteretic mode control has been reported recently. However, due to the limitations on fixed on-time and mandatory minimum off-time, sluggish response and large voltage over-/undershoot are severe during extreme load transient scenarios. This paper presents a load transient enhance scheme which achieves adaptive on-time (AOT) transient response promptly and within one switching cycle, through instantaneous load change (∆IO) sensing technique. Based on the AOT control, a single-stage Gallium Nitride (GaN) based DC-DC converter is designed. Because a GaN switch inherently has no body diode and thus shows a high reverse conduction voltage, the efficiency is degraded with excessively long dead time (tdead). Accordingly, a sample-and-hold (S/H) based closed-loop dead time control is proposed to regulate tdead adaptively according to instantaneous input voltage (VIN) and IO. The converter is implemented using a 0.35-µm high voltage (HV) BCD process, accomplishing the DC-DC voltage conversion from 40 to 1.2V at 5MHz. In response to load steps between 0.5A and 10A, it achieves a 49mV/29mV VO undershoot/overshoot within one switching cycle. Thanks to the adaptive dead time control, the efficiency is improved by 4.8% at light load and 1.5% at heavy load, respectively, with a peak value of 89.5%.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"47 1","pages":"513-516"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81585318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487219
R. Kheirollahi, Zhonghao Dongye, Hua Zhang, Shuyan Zhao, F. Lu
This paper aims to apply silicon-carbide (SiC) MOSFETs to solid-state circuit breakers (SSCBs) including active injection circuits (AIRCs) for DC systems. SiC MOSFETs are employed in main and auxiliary circuits to provide a fast response time and compact design. Benefiting from AIRCs, fault current is reduced to zero in the main switch during DC current interruption. The obtained soft-switching helps to mitigate the effects of parasitic components and utilize the fully capabilities of the SiC MOSFETs in SSCBs. To select the optimized values of the passive components in the auxiliary branch, a design procedure is developed. The presented topology is verified using simulations of 4kV/100A in LTspice environment and experiments of a downsized 380V/15A prototype with a response time of 2.8µs.
{"title":"Developing Soft Switching in Solid-State Circuit Breakers","authors":"R. Kheirollahi, Zhonghao Dongye, Hua Zhang, Shuyan Zhao, F. Lu","doi":"10.1109/APEC42165.2021.9487219","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487219","url":null,"abstract":"This paper aims to apply silicon-carbide (SiC) MOSFETs to solid-state circuit breakers (SSCBs) including active injection circuits (AIRCs) for DC systems. SiC MOSFETs are employed in main and auxiliary circuits to provide a fast response time and compact design. Benefiting from AIRCs, fault current is reduced to zero in the main switch during DC current interruption. The obtained soft-switching helps to mitigate the effects of parasitic components and utilize the fully capabilities of the SiC MOSFETs in SSCBs. To select the optimized values of the passive components in the auxiliary branch, a design procedure is developed. The presented topology is verified using simulations of 4kV/100A in LTspice environment and experiments of a downsized 380V/15A prototype with a response time of 2.8µs.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"45 1","pages":"1117-1121"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82349484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-14DOI: 10.1109/APEC42165.2021.9487092
Shrivatsal Sharma, V. Iyer, P. Das, S. Bhattacharya
Droop control is a commonly used method for load current sharing among the converters in DC microgrid applications. However, in this method, the current sharing and load voltage regulation are affected by cable resistances and other non-idealities. The conventional droop control method’s performance can be improved using secondary control algorithms that involve low-bandwidth communication channels. In this paper, an improved secondary control algorithm is proposed for a multi-source, single load bus DC microgrid system. In the proposed algorithm, the load voltage information is communicated to the individual converters, and there are no communication channels between individual converters. Thus the proposed algorithm achieves accurate current sharing and improved load voltage regulation with reduced communication channels compared to several state-of-the-art approaches. All the controllers in the proposed algorithm are implemented locally, and hence a decentralized control is achieved. The proposed algorithm’s effectiveness is validated using circuit simulations and hardware-based experiments on a two converter single load bus DC microgrid system.
{"title":"A Modified Droop Control Algorithm for DC Microgrids to Achieve Accurate Current Sharing and Improved Voltage Regulation","authors":"Shrivatsal Sharma, V. Iyer, P. Das, S. Bhattacharya","doi":"10.1109/APEC42165.2021.9487092","DOIUrl":"https://doi.org/10.1109/APEC42165.2021.9487092","url":null,"abstract":"Droop control is a commonly used method for load current sharing among the converters in DC microgrid applications. However, in this method, the current sharing and load voltage regulation are affected by cable resistances and other non-idealities. The conventional droop control method’s performance can be improved using secondary control algorithms that involve low-bandwidth communication channels. In this paper, an improved secondary control algorithm is proposed for a multi-source, single load bus DC microgrid system. In the proposed algorithm, the load voltage information is communicated to the individual converters, and there are no communication channels between individual converters. Thus the proposed algorithm achieves accurate current sharing and improved load voltage regulation with reduced communication channels compared to several state-of-the-art approaches. All the controllers in the proposed algorithm are implemented locally, and hence a decentralized control is achieved. The proposed algorithm’s effectiveness is validated using circuit simulations and hardware-based experiments on a two converter single load bus DC microgrid system.","PeriodicalId":7050,"journal":{"name":"2021 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"8 1","pages":"119-125"},"PeriodicalIF":0.0,"publicationDate":"2021-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87791574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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