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Fast and accurate poisson solver algorithm in 3D simply and double connected domains with a smooth complex geometry with applications in optics
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1007/s11082-025-08054-x
Mohamed El-Gamel, Nader R. Nassar, Atallah El-Shenawy

This paper introduces an innovative approach for addressing the Poisson equation in simply and doubly connected 3D domains with irregular surfaces, which has significant implications in various scientific and engineering fields, such as irregular cross-section optical waveguides and electromagnetic wave propagation. The Poisson equation is extensively utilized across disciplines like physics, engineering, and mathematics, and its solution offers insight into diverse physical phenomena. The solution to the Poisson equation is helpful in constructing potentials crucial for the comprehension and design of optical and electromagnetic systems. The application of Radial Basis Functions (RBFs) collocation method with changeable form parameters presents novel opportunities for precise and efficient resolutions of this significant equation. Our methodology is relevant to both simply and doubly connected three-dimensional domains with irregular surfaces, frequently seen in various practical applications, such as complex waveguide geometries. Seven instances are presented for various complex simply and doubly connected 3D domains, illustrating the efficacy of the suggested Poisson solver in generating potentials to improve the precision and efficiency of the method. The proposed method can be considered as a benchmark solver for such type of problems appearing in optics and electromagnetic wave engineering. keyword: Radial Basis Functions, Simply Connected Domains, Double Connected Domains, Variable shape parameter, Three dimensional Laplace equation, Three dimensional Poisson Equation.

{"title":"Fast and accurate poisson solver algorithm in 3D simply and double connected domains with a smooth complex geometry with applications in optics","authors":"Mohamed El-Gamel,&nbsp;Nader R. Nassar,&nbsp;Atallah El-Shenawy","doi":"10.1007/s11082-025-08054-x","DOIUrl":"10.1007/s11082-025-08054-x","url":null,"abstract":"<div><p>This paper introduces an innovative approach for addressing the Poisson equation in simply and doubly connected 3D domains with irregular surfaces, which has significant implications in various scientific and engineering fields, such as irregular cross-section optical waveguides and electromagnetic wave propagation. The Poisson equation is extensively utilized across disciplines like physics, engineering, and mathematics, and its solution offers insight into diverse physical phenomena. The solution to the Poisson equation is helpful in constructing potentials crucial for the comprehension and design of optical and electromagnetic systems. The application of Radial Basis Functions (RBFs) collocation method with changeable form parameters presents novel opportunities for precise and efficient resolutions of this significant equation. Our methodology is relevant to both simply and doubly connected three-dimensional domains with irregular surfaces, frequently seen in various practical applications, such as complex waveguide geometries. Seven instances are presented for various complex simply and doubly connected 3D domains, illustrating the efficacy of the suggested Poisson solver in generating potentials to improve the precision and efficiency of the method. The proposed method can be considered as a benchmark solver for such type of problems appearing in optics and electromagnetic wave engineering. keyword: Radial Basis Functions, Simply Connected Domains, Double Connected Domains, Variable shape parameter, Three dimensional Laplace equation, Three dimensional Poisson Equation.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08054-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoresponsivity enhancement of W-doped ZnO film/Silicon based devices via silver nanoparticles
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1007/s11082-025-08059-6
Ream Jalal, Kenan Ozel, Abdullah Atilgan, Abdullah Yildiz

Silver nanoparticles (Ag NPs) were deposited onto a 2 at.% Tungsten (W)-doped ZnO (WZO)/p-Silicon (p-Si) UV photodetector using a cost-effective sol–gel method. Top-view scanning electron microscopy (SEM) images confirmed the uniform coating of Ag NPs. Cross-sectional SEM analysis revealed a WZO film thickness of 167 nm, including the Ag NP layer. UV–Vis spectroscopy demonstrated high transparency with an average value of 79.5% for the Ag NPs-coated WZO film. The bandgap energy of this film was calculated to be 3.17 eV. The fabricated photodetector, comprising the Ag NP-modified WZO film and p-Si substrate, exhibited superior performance due to enhanced optical and electrical properties. Notably, the device achieved a responsivity (R*) of 4.83 A/W, a sensitivity (S*) of 60.82, and a detectivity (D*) of 5.06 × 1012 Jones. Compared to the unmodified WZO/p-Si device, the Ag NP-coated photodetector displayed significant improvements: a 26% increase in R*, a 79% increase in S*, and a 53% increase in D*. These findings highlight the potential of incorporating metal nanoparticles into photosensitive devices to optimize light-matter interactions.

{"title":"Photoresponsivity enhancement of W-doped ZnO film/Silicon based devices via silver nanoparticles","authors":"Ream Jalal,&nbsp;Kenan Ozel,&nbsp;Abdullah Atilgan,&nbsp;Abdullah Yildiz","doi":"10.1007/s11082-025-08059-6","DOIUrl":"10.1007/s11082-025-08059-6","url":null,"abstract":"<div><p>Silver nanoparticles (Ag NPs) were deposited onto a 2 at.% Tungsten (W)-doped ZnO (WZO)/p-Silicon (p-Si) UV photodetector using a cost-effective sol–gel method. Top-view scanning electron microscopy (SEM) images confirmed the uniform coating of Ag NPs. Cross-sectional SEM analysis revealed a WZO film thickness of 167 nm, including the Ag NP layer. UV–Vis spectroscopy demonstrated high transparency with an average value of 79.5% for the Ag NPs-coated WZO film. The bandgap energy of this film was calculated to be 3.17 eV. The fabricated photodetector, comprising the Ag NP-modified WZO film and p-Si substrate, exhibited superior performance due to enhanced optical and electrical properties. Notably, the device achieved a responsivity (<i>R*</i>) of 4.83 A/W, a sensitivity (<i>S*</i>) of 60.82, and a detectivity (<i>D*</i>) of 5.06 × 10<sup>12</sup> Jones. Compared to the unmodified WZO/p-Si device, the Ag NP-coated photodetector displayed significant improvements: a 26% increase in <i>R*</i>, a 79% increase in <i>S*</i>, and a 53% increase in <i>D*</i>. These findings highlight the potential of incorporating metal nanoparticles into photosensitive devices to optimize light-matter interactions.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08059-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pressure-induced physical properties of lead-free double perovskite oxides La2NiMnO6 for optoelectronic applications
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1007/s11082-025-08044-z
Md. Lokman Ali, Sanzida Naznin Mim, Zihad Hossain, Mahbub Alam, H. M. A. R. Maruf

Recently, lead-free double perovskites have gathered significant attention in the research community for their unique way of behaving, and multipurpose applications in memory devices, different types of fuel cells, catalyst electrodes, solar cells, spintronics, and optoelectronics devices. This study widely explores the structural, electronic, optical, elastic, mechanical, and thermodynamical properties of lead-free double perovskite compound La2NiMnO6 (LNMO) using density functional theory (DFT) computations along with a precise way of handling electron interactions known as the generalized gradient approximation (GGA), specifically utilizing the Perdew–Burke–Ernzerhof (PBE) method under differed pressure conditions. It goals to boost the characteristics of LNMO by applying pressure and offers valuable supervision for future researches. LNMO displays varied optical and electronic individualities, including Drude-like metallic behavior, variation of refractive index with pressure, higher reflectivity in UV region, pressure-dependent enhanced conductivity and amended applications in optoelectronics. We explore how La2NiMnO6 reacts to stress, distortion, and shear forces, revealing its strength and stability. The analysis of its mechanical appearances uncovers La2NiMnO6's pliability and the modification to ductility from brittleness as pressure rises, leading to improved stiffness and flexibility. Additional investigation on the direction-dependent mechanical property discloses the transition from anisotropic to isotropic under increasing pressure. These findings not only expand our fundamental comprehension of La2NiMnO6 but also carry noteworthy practical inferences for its application across various technological applications.

{"title":"Pressure-induced physical properties of lead-free double perovskite oxides La2NiMnO6 for optoelectronic applications","authors":"Md. Lokman Ali,&nbsp;Sanzida Naznin Mim,&nbsp;Zihad Hossain,&nbsp;Mahbub Alam,&nbsp;H. M. A. R. Maruf","doi":"10.1007/s11082-025-08044-z","DOIUrl":"10.1007/s11082-025-08044-z","url":null,"abstract":"<div><p>Recently, lead-free double perovskites have gathered significant attention in the research community for their unique way of behaving, and multipurpose applications in memory devices, different types of fuel cells, catalyst electrodes, solar cells, spintronics, and optoelectronics devices. This study widely explores the structural, electronic, optical, elastic, mechanical, and thermodynamical properties of lead-free double perovskite compound <i>La</i><sub><i>2</i></sub><i>NiMnO</i><sub><i>6</i></sub> (LNMO) using density functional theory (DFT) computations along with a precise way of handling electron interactions known as the generalized gradient approximation (GGA), specifically utilizing the Perdew–Burke–Ernzerhof (PBE) method under differed pressure conditions. It goals to boost the characteristics of LNMO by applying pressure and offers valuable supervision for future researches. LNMO displays varied optical and electronic individualities, including Drude-like metallic behavior, variation of refractive index with pressure, higher reflectivity in UV region, pressure-dependent enhanced conductivity and amended applications in optoelectronics. We explore how <i>La</i><sub><i>2</i></sub><i>NiMnO</i><sub><i>6</i></sub> reacts to stress, distortion, and shear forces, revealing its strength and stability. The analysis of its mechanical appearances uncovers <i>La</i><sub><i>2</i></sub><i>NiMnO</i><sub><i>6</i></sub>'s pliability and the modification to ductility from brittleness as pressure rises, leading to improved stiffness and flexibility. Additional investigation on the direction-dependent mechanical property discloses the transition from anisotropic to isotropic under increasing pressure. These findings not only expand our fundamental comprehension of <i>La</i><sub><i>2</i></sub><i>NiMnO</i><sub><i>6</i></sub> but also carry noteworthy practical inferences for its application across various technological applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Innovative wearable textile antenna for holistic prognostic medical applications and perpetual vital signs surveillance of human physiology
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1007/s11082-025-08040-3
Raghav Dwivedi, D. K. Srivastava, Vinod Kumar Singh

This paper presents a revolutionary breakthrough in wearable antenna technology through an ingeniously engineered arrowhead-shaped textile butterfly design, fabricated on an eco-friendly jean’s substrate marking a paradigm shift in flexible electronics and communication networks. This textile antenna's distinctive morphology transcends conventional designs by seamlessly fusing biomimetic principles with cutting-edge electromagnetic architecture for wearable antenna applications, delivering unprecedented flexibility and conformability while maintaining superior performance metrics. Rigorous electromagnetic simulations and prototype validation demonstrate exceptional results: an ultra-wideband frequency response spanning 2.359–16.76 GHz, coupled with a remarkable peak gain of 6.9 dB and a ground-breaking bandwidth enhancement of 150.64%. The antenna's biomimetic butterfly topology revolutionizes omnidirectional connectivity while achieving unprecedented miniaturization, making it ideal for vital sign monitoring systems. Most significantly, the design incorporates an innovative electromagnetic field distribution technique that yields exceptionally low Specific Absorption Rate values, surpassing FCC safety standards. This breakthrough enables transformative applications in clairvoyant medical monitoring, facilitating next-generation vital sign monitoring with zero-latency data transmission and minimal electromagnetic interference, thereby pioneering new frontiers in personalized healthcare diagnostics and real-time patient monitoring systems. The integration of flexible electronics with this innovative textile antenna design represents a significant advancement in wearable technology, offering robust solutions for future healthcare applications.

{"title":"Innovative wearable textile antenna for holistic prognostic medical applications and perpetual vital signs surveillance of human physiology","authors":"Raghav Dwivedi,&nbsp;D. K. Srivastava,&nbsp;Vinod Kumar Singh","doi":"10.1007/s11082-025-08040-3","DOIUrl":"10.1007/s11082-025-08040-3","url":null,"abstract":"<div><p>This paper presents a revolutionary breakthrough in wearable antenna technology through an ingeniously engineered arrowhead-shaped textile butterfly design, fabricated on an eco-friendly jean’s substrate marking a paradigm shift in flexible electronics and communication networks. This textile antenna's distinctive morphology transcends conventional designs by seamlessly fusing biomimetic principles with cutting-edge electromagnetic architecture for wearable antenna applications, delivering unprecedented flexibility and conformability while maintaining superior performance metrics. Rigorous electromagnetic simulations and prototype validation demonstrate exceptional results: an ultra-wideband frequency response spanning 2.359–16.76 GHz, coupled with a remarkable peak gain of 6.9 dB and a ground-breaking bandwidth enhancement of 150.64%. The antenna's biomimetic butterfly topology revolutionizes omnidirectional connectivity while achieving unprecedented miniaturization, making it ideal for vital sign monitoring systems. Most significantly, the design incorporates an innovative electromagnetic field distribution technique that yields exceptionally low Specific Absorption Rate values, surpassing FCC safety standards. This breakthrough enables transformative applications in clairvoyant medical monitoring, facilitating next-generation vital sign monitoring with zero-latency data transmission and minimal electromagnetic interference, thereby pioneering new frontiers in personalized healthcare diagnostics and real-time patient monitoring systems. The integration of flexible electronics with this innovative textile antenna design represents a significant advancement in wearable technology, offering robust solutions for future healthcare applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143109907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of the incorporation of phosphor on the optoelectronic properties of InAs0.75Sb0.250 ternary for optical telecommunications: DFT calculation 加入荧光粉对InAs0.75Sb0.250三元光通信器件光电性能的影响:DFT计算
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-024-07998-w
Ameur Djili, Miloud Benchehima, Hamza Abid

In this study, we adopted a 16-atom simple cubic supercell based on the special quasi random structure approach of Zunger et al. to investigate the structural, electronic and optical properties of InPxAsySb1-x–y quaternary alloys in zinc blende phase. The calculations were performed using the full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). We employed the local intensity (LDA) and generalized gradient approximation of Wu and Cohen (GGA-WC) to calculate the structural parameters. Both schemes (EV-GGA) and (TB-mBJ) were used to describe the optoelectronic properties. Our calculations show that the lattice constant value of InPxAsySb1-s-y quaternary alloys decreases almost linearly with increasing P concentration. Electronic results showed that InPxAsySb1-s-y quaternary alloys exhibit a direct band gap semiconductor for all P concentrations. Furthermore, we observed that the direct band gap of quaternaries increases linearly with P concentrations. The optical properties of InPxAsySb1-s-y quaternaries, including the dielectric function, optical conductivity, absorption coefficient and the complex refractive index were predicted and discussed in detail. The obtained results make these compounds very promising for optical telecommunications.

在本研究中,我们采用了基于Zunger等人的特殊准随机结构方法的16原子简单立方超级单体,研究了InPxAsySb1-x-y四元合金在闪锌矿相中的结构、电子和光学性质。计算使用密度泛函理论(DFT)中的全势线性化增广平面波(FP-LAPW)方法进行。我们采用Wu和Cohen的局部强度(LDA)和广义梯度近似(GGA-WC)来计算结构参数。采用EV-GGA和TB-mBJ两种格式描述其光电性能。我们的计算表明,InPxAsySb1-s-y季系合金的晶格常数值几乎随P浓度的增加而线性降低。电子结果表明,在所有P浓度下,InPxAsySb1-s-y季系合金均表现为直接带隙半导体。此外,我们观察到第四系的直接带隙随P浓度的增加而线性增加。对InPxAsySb1-s-y四元化合物的介电函数、光学电导率、吸收系数和复折射率等光学性质进行了预测和讨论。所得结果使这些化合物在光通信领域具有很大的应用前景。
{"title":"The effect of the incorporation of phosphor on the optoelectronic properties of InAs0.75Sb0.250 ternary for optical telecommunications: DFT calculation","authors":"Ameur Djili,&nbsp;Miloud Benchehima,&nbsp;Hamza Abid","doi":"10.1007/s11082-024-07998-w","DOIUrl":"10.1007/s11082-024-07998-w","url":null,"abstract":"<div><p>In this study, we adopted a 16-atom simple cubic supercell based on the special quasi random structure approach of Zunger et al. to investigate the structural, electronic and optical properties of InP<sub>x</sub>As<sub>y</sub>Sb<sub>1-x–y</sub> quaternary alloys in zinc blende phase. The calculations were performed using the full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). We employed the local intensity (LDA) and generalized gradient approximation of Wu and Cohen (GGA-WC) to calculate the structural parameters. Both schemes (EV-GGA) and (TB-mBJ) were used to describe the optoelectronic properties. Our calculations show that the lattice constant value of InP<sub>x</sub>As<sub>y</sub>Sb<sub>1-s-y</sub> quaternary alloys decreases almost linearly with increasing P concentration. Electronic results showed that InP<sub>x</sub>As<sub>y</sub>Sb<sub>1-s-y</sub> quaternary alloys exhibit a direct band gap semiconductor for all P concentrations. Furthermore, we observed that the direct band gap of quaternaries increases linearly with P concentrations. The optical properties of InP<sub>x</sub>As<sub>y</sub>Sb<sub>1-s-y</sub> quaternaries, including the dielectric function, optical conductivity, absorption coefficient and the complex refractive index were predicted and discussed in detail. The obtained results make these compounds very promising for optical telecommunications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interference cancellation to enhance bit error rate using the YOLO-CSE model 利用YOLO-CSE模型消除干扰以提高误码率
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-024-08032-9
Wessam M. Salama

A novel framework based on combining the You Only Look Once-CSE (YOLO-CSE) model is implemented in this paper with Communication Visible Light (CVL) and Multiple Access non-orthogonality (MANO-CVL) for Multiple Input and Output (MIMO). The main goal of the proposed model is to decrease the detecting error in the received bits and distinguish between noise signal and correct bits. The YOLO-CSE model uses the Yolov5 model as a backbone. Two sorts of regulation are applied; position modulation (L-PPM) with different L and users, inside a Comparable Gain Combiner (CGC) at the recipient. This framework thinks about (n) and (m) clients in the ideal and non-ideal Cancellation of Successive Interferences (CSI). Because of the YOLO-CSE model, the error execution is additionally considered versus the power portion coefficient (α) for (n) and (m) clients switching keying (OOK) balance Single Input and Output (SISO), ((n times n), and left( {m times n} right)) for CVL based on utilizing the MANO and MIMO frameworks. The proposed model focuses on the significant highlights that have been removed from the dataset by utilizing the Convolutional unit (CBAU). The Fast-Pooling Spatial Pyramid (SPPF +) is likewise applied to the extricated highlights to reuse them. In that unique situation, the exponential block is coordinated to enact the capability for additional exact outcomes. The modified model, YOLO-CSE outperforms the other models in the literature by 18% outperform the other models in the literature.

将YOLO-CSE模型与通信可见光(CVL)和多输入输出(MIMO)的多址非正交性(MANO-CVL)相结合,实现了一种新的多输入输出(MIMO)框架。该模型的主要目标是降低接收比特的检测误差,区分噪声信号和正确比特。YOLO-CSE模型使用Yolov5模型作为主干。适用两种规则;位置调制(L- ppm)与不同的L和用户,在一个比较增益组合器(CGC)在接收。该框架考虑了理想和非理想连续干扰消除(CSI)中的(n)和(m)客户端。由于YOLO-CSE模型,对于(n)和(m)客户端切换键控(OOK)平衡单输入输出(SISO), ((n times n), and left( {m times n} right))对于基于使用MANO和MIMO框架的CVL,额外考虑了错误执行与功率部分系数(α)。该模型通过使用卷积单元(CBAU)将重点放在从数据集中删除的重要亮点上。快速池空间金字塔(SPPF +)同样应用于提取的亮点,以重复使用它们。在这种独特的情况下,指数块被协调以制定额外精确结果的能力。修正后的模型YOLO-CSE比文献中其他模型的性能高18% outperform the other models in the literature.
{"title":"Interference cancellation to enhance bit error rate using the YOLO-CSE model","authors":"Wessam M. Salama","doi":"10.1007/s11082-024-08032-9","DOIUrl":"10.1007/s11082-024-08032-9","url":null,"abstract":"<div><p>A novel framework based on combining the You Only Look Once-CSE (YOLO-CSE) model is implemented in this paper with Communication Visible Light (CVL) and Multiple Access non-orthogonality (MANO-CVL) for Multiple Input and Output (MIMO). The main goal of the proposed model is to decrease the detecting error in the received bits and distinguish between noise signal and correct bits. The YOLO-CSE model uses the Yolov5 model as a backbone. Two sorts of regulation are applied; position modulation (L-PPM) with different L and users, inside a Comparable Gain Combiner (CGC) at the recipient. This framework thinks about <span>(n)</span> and <span>(m)</span> clients in the ideal and non-ideal Cancellation of Successive Interferences (CSI). Because of the YOLO-CSE model, the error execution is additionally considered versus the power portion coefficient (α) for <span>(n)</span> and <span>(m)</span> clients switching keying (OOK) balance Single Input and Output (SISO), <span>((n times n), and left( {m times n} right))</span> for CVL based on utilizing the MANO and MIMO frameworks. The proposed model focuses on the significant highlights that have been removed from the dataset by utilizing the Convolutional unit (CBAU). The Fast-Pooling Spatial Pyramid (SPPF +) is likewise applied to the extricated highlights to reuse them. In that unique situation, the exponential block is coordinated to enact the capability for additional exact outcomes. The modified model, YOLO-CSE outperforms the other models in the literature by 18% outperform the other models in the literature.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-024-08032-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of heat treatment on structural and optical properties of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide thin films 热处理对5,10,15,20-四苯基- 21h, 23h -卟啉氧化钒(IV)薄膜结构和光学性能的影响
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-025-08039-w
N. A. Elsayed, W. M. Desoky, M. M. Hassan, E. A. A. El-Shazly, K. F. Abd El-Rahman

Thin films of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide, VOTPP, were placed on glass with an overall thickness of 495 nm utilizing the thermal deposition process. The films underwent annealing at various temperatures (323, 373, 423, 473, 573 K) for 3 h. The thermal behaviour of VOTPP powder was tested by DTA. The crystalline molecular structure, and surface morphology of as-deposited and annealed films were examined utilizing XRD, SEM, and AFM. The crystallinity of VOTPP film was enhanced and the crystallite size grew by boosting the annealing temperature. The RMS roughness of annealed film at 573 K is 14.87 nm. Optical parameters of as-deposited and annealed VOTPP films were determined by spectrophotometric measurements in the spectrum of (200–2500 nm). The absorbance spectrum of VOTPP films is characterized by the Soret band, which exhibits Davydov splitting into two peaks, Bx and By in the annealed films at 473 and 573 K. Additionally, Q and N bands are observed. Annealing reduces both the linear and nonlinear refractive index, as well as the dispersion parameters. Calculations for molar refractivity and absorptivity, nonlinear parameters, and optical conductivity at different annealing temperatures have been done. Additionally, the energy loss functions at different annealing temperatures were obtained. The electronic transition is indirectly allowed. Optical energies such as ({E}_{g}^{onset}), ({E}_{g}^{opt1}), ({E}_{g}^{opt2}), and ({E}_{U}) were observed to reduce as the annealing temperature elevated. All the optical parameters were compared with other porphyrin derivatives. This study demonstrates that thermally annealing is an efficient method in enhancing the optical and synthetic characteristics of VOTPP films, which serve as a viable absorbing layer in renewable energy systems.

利用热沉积工艺将5,10,15,20-四苯基- 21h, 23h -卟啉氧化钒(VOTPP)薄膜放置在总厚度为495 nm的玻璃上。在不同温度(323、373,423、473、473、573 K)下退火3 h,用差热分析(DTA)测试了VOTPP粉末的热性能。利用XRD、SEM和AFM等手段对沉积膜和退火膜的晶体分子结构和表面形貌进行了研究。随着退火温度的升高,VOTPP薄膜的结晶度增强,晶粒尺寸增大。退火膜在573k时的RMS粗糙度为14.87 nm。采用分光光度法在(200 ~ 2500 nm)范围内测定了沉积和退火后的VOTPP薄膜的光学参数。VOTPP薄膜的吸光度谱以Soret带为特征,在473 K和573 K时,薄膜呈现Davydov分裂为两个峰Bx和by。此外,还观察到Q和N波段。退火降低了线性和非线性折射率以及色散参数。计算了不同退火温度下的摩尔折射率、吸光率、非线性参数和光电导率。此外,还得到了不同退火温度下的能量损失函数。电子过渡是间接允许的。光能如({E}_{g}^{onset}), ({E}_{g}^{opt1}), ({E}_{g}^{opt2})和({E}_{U})随着退火温度的升高而降低。并与其它卟啉衍生物进行了光学参数比较。该研究表明,热退火是提高VOTPP薄膜光学和合成特性的有效方法,可作为可再生能源系统中可行的吸收层。
{"title":"Impact of heat treatment on structural and optical properties of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide thin films","authors":"N. A. Elsayed,&nbsp;W. M. Desoky,&nbsp;M. M. Hassan,&nbsp;E. A. A. El-Shazly,&nbsp;K. F. Abd El-Rahman","doi":"10.1007/s11082-025-08039-w","DOIUrl":"10.1007/s11082-025-08039-w","url":null,"abstract":"<div><p>Thin films of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide, VOTPP, were placed on glass with an overall thickness of 495 nm utilizing the thermal deposition process. The films underwent annealing at various temperatures (323, 373, 423, 473, 573 K) for 3 h. The thermal behaviour of VOTPP powder was tested by DTA. The crystalline molecular structure, and surface morphology of as-deposited and annealed films were examined utilizing XRD, SEM, and AFM. The crystallinity of VOTPP film was enhanced and the crystallite size grew by boosting the annealing temperature. The RMS roughness of annealed film at 573 K is 14.87 nm. Optical parameters of as-deposited and annealed VOTPP films were determined by spectrophotometric measurements in the spectrum of (200–2500 nm). The absorbance spectrum of VOTPP films is characterized by the Soret band, which exhibits Davydov splitting into two peaks, B<sub>x</sub> and B<sub>y</sub> in the annealed films at 473 and 573 K. Additionally, Q and N bands are observed. Annealing reduces both the linear and nonlinear refractive index, as well as the dispersion parameters. Calculations for molar refractivity and absorptivity, nonlinear parameters, and optical conductivity at different annealing temperatures have been done. Additionally, the energy loss functions at different annealing temperatures were obtained. The electronic transition is indirectly allowed. Optical energies such as <span>({E}_{g}^{onset})</span>, <span>({E}_{g}^{opt1})</span>, <span>({E}_{g}^{opt2})</span>, and <span>({E}_{U})</span> were observed to reduce as the annealing temperature elevated. All the optical parameters were compared with other porphyrin derivatives. This study demonstrates that thermally annealing is an efficient method in enhancing the optical and synthetic characteristics of VOTPP films, which serve as a viable absorbing layer in renewable energy systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08039-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of electron irradiation on microstructural, dielectric and electrical properties of potassium ion conducting PVA solid polymer composite 电子辐照对钾离子导电PVA固体聚合物复合材料微观结构、介电性能和电学性能的影响
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-025-08042-1
B. K. Mahantesha, V. Ravindrachary, L. Rashmi, R. Padmakumari, Shreedatta Hegde, V. C. Petwal

The study investigates the solid polymer composite (SPC) made using solution casting with PVA as the host polymer and KI as the dopant. The SPC was exposed to electron beam doses ranging from 0 to 300 kGy to study its microstructural, optical, thermal, electrical, and dielectric properties. XRD, FTIR, and TGA were used to study the structural and thermal properties. Results showed variations in crystalline phase, charge transfer complex formation, and defects due to crosslinking and chain scission processes. The activation energy for thermal decomposition values matches the onset temperature. UV–Vis studies revealed changes in optical properties with radiation dose, attributed to molecular ordering changes, defects formation, and charge transfer complexes. Electric and dielectric properties were studied using impedance spectroscopy. The highest ac conductivity was achieved for 300 kGy-irradiated SPC, attributed to free radical production. The correlated barrier hopping model was found to be the best fit for characterizing the electrical conduction mechanism of the system. Dielectric measurements revealed non-Debye behavior and substantial dielectric dispersion in the frequency range, increasing with irradiation dose. The results suggest the SPC is a potential candidate for solid-state energy storage and conversion applications.

研究了以PVA为主体聚合物,KI为掺杂剂,采用溶液铸造法制备的固体聚合物复合材料(SPC)。将SPC暴露于0 ~ 300 kGy的电子束剂量下,研究其显微结构、光学、热学、电学和介电性能。采用XRD、FTIR、TGA等方法研究了其结构和热性能。结果表明,由于交联和链断裂过程,晶体相、电荷转移络合物的形成和缺陷发生了变化。热分解值的活化能与起始温度相匹配。紫外-可见研究揭示了分子的有序变化、缺陷形成和电荷转移配合物导致的光学性质随辐射剂量的变化。用阻抗谱法研究了材料的电性能和介电性能。由于自由基的产生,300 kgy辐照的SPC达到了最高的交流电导率。发现相关势垒跳变模型最适合描述系统的导电机理。介电测量显示非德拜行为和大量的介电色散在频率范围内,随辐照剂量增加。结果表明,SPC是固态能量存储和转换应用的潜在候选者。
{"title":"Impact of electron irradiation on microstructural, dielectric and electrical properties of potassium ion conducting PVA solid polymer composite","authors":"B. K. Mahantesha,&nbsp;V. Ravindrachary,&nbsp;L. Rashmi,&nbsp;R. Padmakumari,&nbsp;Shreedatta Hegde,&nbsp;V. C. Petwal","doi":"10.1007/s11082-025-08042-1","DOIUrl":"10.1007/s11082-025-08042-1","url":null,"abstract":"<div><p>The study investigates the solid polymer composite (SPC) made using solution casting with PVA as the host polymer and KI as the dopant. The SPC was exposed to electron beam doses ranging from 0 to 300 kGy to study its microstructural, optical, thermal, electrical, and dielectric properties. XRD, FTIR, and TGA were used to study the structural and thermal properties. Results showed variations in crystalline phase, charge transfer complex formation, and defects due to crosslinking and chain scission processes. The activation energy for thermal decomposition values matches the onset temperature. UV–Vis studies revealed changes in optical properties with radiation dose, attributed to molecular ordering changes, defects formation, and charge transfer complexes. Electric and dielectric properties were studied using impedance spectroscopy. The highest ac conductivity was achieved for 300 kGy-irradiated SPC, attributed to free radical production. The correlated barrier hopping model was found to be the best fit for characterizing the electrical conduction mechanism of the system. Dielectric measurements revealed non-Debye behavior and substantial dielectric dispersion in the frequency range, increasing with irradiation dose. The results suggest the SPC is a potential candidate for solid-state energy storage and conversion applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical analysis and design of a dual-wavelength and selectable all-optical broadband QDs semiconductor optical amplifier (QDs-SOA) with inhomogeneous broadening 非均匀展宽双波长可选全光宽带量子点半导体光放大器的理论分析与设计
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-024-08014-x
Mahdiyeh Eyvazi, Reza Yadipour, Ali Rostami, Parisa Rostami, Hamid Mirtagioglu

This study delves into the significant role played by Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) in meeting the ever-growing bandwidth demands. QD-SOAs offer a unique blend of cost-effectiveness, integration capabilities, wide bandwidth, rapid responsiveness, robust power output, stability, and spectral adaptability, driving notable advancements in optical communication systems. In this work, we introduce a novel two-wavelength amplifier structure based on Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) that utilizes quantum dots of different sizes to achieve efficient amplification at specific mid-infrared wavelengths. This innovative approach, which incorporates quantum dots with varying sizes, enables enhanced performance by optimizing the amplification process for each specific wavelength. Furthermore, this work demonstrates the use of tailored optical pumping mechanisms that enhance the carrier recovery process and reduce carrier relaxation times in the active region. This novel optical pumping technique leads to a significant increase in the efficiency and speed of the amplifier, distinguishing this study from others in the field. Simulation results provide detailed insights into the complex interplay between carrier interactions and gain spectra, offering a comprehensive understanding of QD-SOA operational dynamics. The proposed Quantum Dot Semiconductor Optical Amplifier (QD-SOA) achieves significant advancements in optical communication, offering maximum amplification rates of 26.9 and 19.9 times for QD1 and QD2, respectively, and bandwidths of 12 THz and 15 THz. The study highlights the role of quantum dot size, homogeneous and inhomogeneous broadening, and optical pumping in enhancing gain and performance, demonstrating the potential of QD-SOAs for high-gain, wide-bandwidth applications in photonic systems.

本研究深入探讨了量子点半导体光放大器(qd - soa)在满足日益增长的带宽需求方面所发挥的重要作用。qd - soa提供了独特的成本效益、集成能力、宽带宽、快速响应、强大的功率输出、稳定性和频谱适应性,推动了光通信系统的显著进步。在这项工作中,我们介绍了一种基于量子点半导体光放大器(qd - soa)的新型双波长放大器结构,该结构利用不同尺寸的量子点在特定的中红外波长上实现高效放大。这种创新的方法结合了不同尺寸的量子点,通过优化每个特定波长的放大过程来增强性能。此外,这项工作证明了定制光泵浦机制的使用,增强了载流子恢复过程,减少了载流子在有源区域的弛豫时间。这种新颖的光泵浦技术显著提高了放大器的效率和速度,使本研究有别于其他领域的研究。模拟结果提供了载波相互作用和增益谱之间复杂相互作用的详细见解,提供了对QD-SOA操作动态的全面理解。所提出的量子点半导体光放大器(QD-SOA)在光通信方面取得了重大进展,QD1和QD2的最大放大率分别为26.9倍和19.9倍,带宽分别为12太赫兹和15太赫兹。该研究强调了量子点尺寸、均匀和非均匀展宽以及光泵浦在提高增益和性能方面的作用,展示了qd - soa在光子系统中高增益、宽带应用的潜力。
{"title":"Theoretical analysis and design of a dual-wavelength and selectable all-optical broadband QDs semiconductor optical amplifier (QDs-SOA) with inhomogeneous broadening","authors":"Mahdiyeh Eyvazi,&nbsp;Reza Yadipour,&nbsp;Ali Rostami,&nbsp;Parisa Rostami,&nbsp;Hamid Mirtagioglu","doi":"10.1007/s11082-024-08014-x","DOIUrl":"10.1007/s11082-024-08014-x","url":null,"abstract":"<div><p>This study delves into the significant role played by Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) in meeting the ever-growing bandwidth demands. QD-SOAs offer a unique blend of cost-effectiveness, integration capabilities, wide bandwidth, rapid responsiveness, robust power output, stability, and spectral adaptability, driving notable advancements in optical communication systems. In this work, we introduce a novel two-wavelength amplifier structure based on Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) that utilizes quantum dots of different sizes to achieve efficient amplification at specific mid-infrared wavelengths. This innovative approach, which incorporates quantum dots with varying sizes, enables enhanced performance by optimizing the amplification process for each specific wavelength. Furthermore, this work demonstrates the use of tailored optical pumping mechanisms that enhance the carrier recovery process and reduce carrier relaxation times in the active region. This novel optical pumping technique leads to a significant increase in the efficiency and speed of the amplifier, distinguishing this study from others in the field. Simulation results provide detailed insights into the complex interplay between carrier interactions and gain spectra, offering a comprehensive understanding of QD-SOA operational dynamics. The proposed Quantum Dot Semiconductor Optical Amplifier (QD-SOA) achieves significant advancements in optical communication, offering maximum amplification rates of 26.9 and 19.9 times for QD<sub>1</sub> and QD<sub>2</sub>, respectively, and bandwidths of 12 THz and 15 THz. The study highlights the role of quantum dot size, homogeneous and inhomogeneous broadening, and optical pumping in enhancing gain and performance, demonstrating the potential of QD-SOAs for high-gain, wide-bandwidth applications in photonic systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of B2O3 on physical, thermal, optical and structural properties of zinc lead selenate glasses B2O3对硒酸锌铅玻璃物理、热、光学和结构性能的影响
IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-22 DOI: 10.1007/s11082-024-07177-x
Venkateshwarlu Kalsani, Suresh Sripada

Glass containing zinc-lead boroselenate glasses with the formula 10ZnO–20PbO2-xB2O3–(70 − x)SeO2 (where 10 ≤ x ≤ 60 mol%) were prepared using the conventional melt quenching method. Several physical properties, including density and molar volume, were determined. Glass transition temperature (Tg) was investigated using differential scanning calorimetry (DSC), revealing a decrease in Tg from 347 to 426 °C as the B2O3 content increased. Optical absorption studies showed that as the SeO2 content decreased, the cutoff wavelength increased while the optical band gap energy (({E}_{opt})) and Urbach energy (({Delta E})) decreased. The ({E}_{opt}) values for these glasses ranged from 2.699 to 2.091 eV, while ΔE values fell between 0.232 and 0.351 eV. FTIR measurements revealed that SeO3 tetragonal and SeO4 pyramidal units, as well as BO3 and BO4 units, were present in the network structure of these glasses. Additionally, Raman spectra identified distinct structural units. The FTIR and Raman spectra did not show any specific SeO2 absorption bands. However, the presence of SeO2 in the glass matrix changed how PbO2, ZnO, and B2O3 were absorbed.

含硼硒酸锌铅玻璃的分子式为10ZnO-20PbO2-xB2O3 -(70−x)SeO2(其中10≤x≤60 mol%) were prepared using the conventional melt quenching method. Several physical properties, including density and molar volume, were determined. Glass transition temperature (Tg) was investigated using differential scanning calorimetry (DSC), revealing a decrease in Tg from 347 to 426 °C as the B2O3 content increased. Optical absorption studies showed that as the SeO2 content decreased, the cutoff wavelength increased while the optical band gap energy (({E}_{opt})) and Urbach energy (({Delta E})) decreased. The ({E}_{opt}) values for these glasses ranged from 2.699 to 2.091 eV, while ΔE values fell between 0.232 and 0.351 eV. FTIR measurements revealed that SeO3 tetragonal and SeO4 pyramidal units, as well as BO3 and BO4 units, were present in the network structure of these glasses. Additionally, Raman spectra identified distinct structural units. The FTIR and Raman spectra did not show any specific SeO2 absorption bands. However, the presence of SeO2 in the glass matrix changed how PbO2, ZnO, and B2O3 were absorbed.
{"title":"Effect of B2O3 on physical, thermal, optical and structural properties of zinc lead selenate glasses","authors":"Venkateshwarlu Kalsani,&nbsp;Suresh Sripada","doi":"10.1007/s11082-024-07177-x","DOIUrl":"10.1007/s11082-024-07177-x","url":null,"abstract":"<div><p>Glass containing zinc-lead boroselenate glasses with the formula 10ZnO–20PbO<sub>2</sub>-xB<sub>2</sub>O<sub>3</sub>–(70 − x)SeO<sub>2</sub> (where 10 ≤ x ≤ 60 mol%) were prepared using the conventional melt quenching method. Several physical properties, including density and molar volume, were determined. Glass transition temperature (T<sub>g</sub>) was investigated using differential scanning calorimetry (DSC), revealing a decrease in T<sub>g</sub> from 347 to 426 °C as the B<sub>2</sub>O<sub>3</sub> content increased. Optical absorption studies showed that as the SeO<sub>2</sub> content decreased, the cutoff wavelength increased while the optical band gap energy (<span>({E}_{opt})</span>) and Urbach energy (<span>({Delta E})</span>) decreased. The <span>({E}_{opt})</span> values for these glasses ranged from 2.699 to 2.091 eV, while ΔE values fell between 0.232 and 0.351 eV. FTIR measurements revealed that SeO<sub>3</sub> tetragonal and SeO<sub>4</sub> pyramidal units, as well as BO<sub>3</sub> and BO<sub>4</sub> units, were present in the network structure of these glasses. Additionally, Raman spectra identified distinct structural units. The FTIR and Raman spectra did not show any specific SeO<sub>2</sub> absorption bands. However, the presence of SeO<sub>2</sub> in the glass matrix changed how PbO<sub>2</sub>, ZnO, and B<sub>2</sub>O<sub>3</sub> were absorbed.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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