Pub Date : 2026-01-13DOI: 10.1007/s11082-025-08618-x
Hitendra K. Malik, Subhajit Bhaskar
The article investigates the frequency shifting of a laser carrying orbital angular momentum (OAM) in a cold collisionless plasma under the impact of a static magnetic field applied in the axial direction. Spatio-temporal variation of the laser intensity profile is investigated considering relativistic mass increase of the plasma electrons. Nonlinear Schrodinger equation is derived using Wentzel -Kramers - Brillouin (WKB) method and slowly varying envelope approximation. The frequency shifting is then discussed in connection with the spatio-temporal variation of the laser intensity. The effects of magnetic field along with the effects of the polarization states are discussed in detail. The relativistic frequency shifting is observed to enhance both rear side and front side of the pulse with the applied magnetic field. It is also observed that right circularly polarized (RCP) lasers undergo stronger shifting than the left circularly polarized (LCP) lasers. The results obtained in this article may find application in twisted harmonic generation, particle acceleration, optical manipulation and so on.
{"title":"Relativistic frequency shifting of laser carrying orbital angular momentum in a magnetized plasma","authors":"Hitendra K. Malik, Subhajit Bhaskar","doi":"10.1007/s11082-025-08618-x","DOIUrl":"10.1007/s11082-025-08618-x","url":null,"abstract":"<div><p>The article investigates the frequency shifting of a laser carrying orbital angular momentum (OAM) in a cold collisionless plasma under the impact of a static magnetic field applied in the axial direction. Spatio-temporal variation of the laser intensity profile is investigated considering relativistic mass increase of the plasma electrons. Nonlinear Schrodinger equation is derived using Wentzel -Kramers - Brillouin (WKB) method and slowly varying envelope approximation. The frequency shifting is then discussed in connection with the spatio-temporal variation of the laser intensity. The effects of magnetic field along with the effects of the polarization states are discussed in detail. The relativistic frequency shifting is observed to enhance both rear side and front side of the pulse with the applied magnetic field. It is also observed that right circularly polarized (RCP) lasers undergo stronger shifting than the left circularly polarized (LCP) lasers. The results obtained in this article may find application in twisted harmonic generation, particle acceleration, optical manipulation and so on.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1007/s11082-026-08675-w
Yasemin Demirhan
In this study, an antireflection (AR) coating based on SiO2 was controllably deposited using a computer-programmed CNC system and evaluated for its performance. A unique, automated high-precision technique was employed for AR layer deposition. Transmission and reflectance measurements were conducted using a UV–Vis spectrophotometer, while the photocatalytic performance of the AR layers was assessed using a methylene blue dye solution under UV illumination. The AR-coated glass was mounted on a monocrystalline silicon solar cell, and the I-V and P-V characteristic curves were obtained. The best-performing AR-coated solar cell exhibited an open-circuit voltage (Voc) of 0.61 V and a short-circuit current density (Isc) of 41.6 mA/cm2, resulting in a 2% increase in efficiency compared to the uncoated device. The CNC-controlled deposition process enabled precise tuning of parameters such as immersion speed, withdrawal speed, dwell time, and alignment, ensuring uniform coatings and enhanced optical performance. Field tests confirmed the low reflectance and improved efficiency of AR-coated solar panels. These findings highlight the potential of SiO2-based AR coatings for enhancing solar cell performance while maintaining mechanical stability.
{"title":"Anti-reflective and optical transparent coatings fabricated by a computer-controlled system","authors":"Yasemin Demirhan","doi":"10.1007/s11082-026-08675-w","DOIUrl":"10.1007/s11082-026-08675-w","url":null,"abstract":"<div><p>In this study, an antireflection (AR) coating based on SiO<sub>2</sub> was controllably deposited using a computer-programmed CNC system and evaluated for its performance. A unique, automated high-precision technique was employed for AR layer deposition. Transmission and reflectance measurements were conducted using a UV–Vis spectrophotometer, while the photocatalytic performance of the AR layers was assessed using a methylene blue dye solution under UV illumination. The AR-coated glass was mounted on a monocrystalline silicon solar cell, and the I-V and P-V characteristic curves were obtained. The best-performing AR-coated solar cell exhibited an open-circuit voltage (V<sub>oc</sub>) of 0.61 V and a short-circuit current density (I<sub>sc</sub>) of 41.6 mA/cm<sup>2</sup>, resulting in a 2% increase in efficiency compared to the uncoated device. The CNC-controlled deposition process enabled precise tuning of parameters such as immersion speed, withdrawal speed, dwell time, and alignment, ensuring uniform coatings and enhanced optical performance. Field tests confirmed the low reflectance and improved efficiency of AR-coated solar panels. These findings highlight the potential of SiO<sub>2</sub>-based AR coatings for enhancing solar cell performance while maintaining mechanical stability.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-026-08675-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper explores the sensing capabilities of one-dimensional (1-D) photonic crystals (PC) based on the thermo-optic effect in alternating layers of Gallium Nitride (GaN) and Silicon Nitride (Si3N4) with double defect layers of air under the application of very high temperatures, ranging from 1000℃ to 1700℃ in 50℃ temperature increments. The proposed new structure of double defect layers enhances sensing efficiency by generating two distinct resonance modes. The principle of the 1-D PC is explained by its optical behaviour, specifically photonic band gap (PBG) without and with defect layers. The temperature sensing efficiency is developed by adding defect layers in the PC, which enables it to transmit two resonance peaks due to double defect layers. The transmission and reflection behaviour of PC is plotted using the computational method, and the numerical values of the proposed sensor are calculated by the well-known transfer matrix method (TMM), resulting in the effective parameters like sensitivity, quality factor (Q-factor), full width at half maxima (FWHM) of the PC. The sensitivity of the sensor for mode − 1 is approximately 0.008 nm/℃, while the sensitivity for mode − 2 is about 0.014 nm/℃. The FWHM of the resonance peaks for mode − 1 and mode-2 are 6.3 nm and 10.832 nm, respectively, at a temperature of 1000℃. The Q-factors for mode − 1 and mode − 2 are 158.512 and 125.802, respectively, at 1000℃.
{"title":"Tunable 1-D photonic crystal sensor for high temperature measurement by introducing double defect mode within successive layers of gallium nitride and silicon nitride","authors":"Barnali Pal, Bibhatsu Kuiri, Saikat Santra, Dipankar Biswas, Probodh Kumar Kuiri, Ardhendu Sekhar Patra","doi":"10.1007/s11082-026-08667-w","DOIUrl":"10.1007/s11082-026-08667-w","url":null,"abstract":"<div><p>This paper explores the sensing capabilities of one-dimensional (1-D) photonic crystals (PC) based on the thermo-optic effect in alternating layers of Gallium Nitride (GaN) and Silicon Nitride (Si<sub>3</sub>N<sub>4</sub>) with double defect layers of air under the application of very high temperatures, ranging from 1000℃ to 1700℃ in 50℃ temperature increments. The proposed new structure of double defect layers enhances sensing efficiency by generating two distinct resonance modes. The principle of the 1-D PC is explained by its optical behaviour, specifically photonic band gap (PBG) without and with defect layers. The temperature sensing efficiency is developed by adding defect layers in the PC, which enables it to transmit two resonance peaks due to double defect layers. The transmission and reflection behaviour of PC is plotted using the computational method, and the numerical values of the proposed sensor are calculated by the well-known transfer matrix method (TMM), resulting in the effective parameters like sensitivity, quality factor (Q-factor), full width at half maxima (FWHM) of the PC. The sensitivity of the sensor for mode − 1 is approximately 0.008 nm/℃, while the sensitivity for mode − 2 is about 0.014 nm/℃. The FWHM of the resonance peaks for mode − 1 and mode-2 are 6.3 nm and 10.832 nm, respectively, at a temperature of 1000℃. The Q-factors for mode − 1 and mode − 2 are 158.512 and 125.802, respectively, at 1000℃.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1007/s11082-026-08680-z
Sarwar Uddin, Abdullah Mohammad Mustakim, Sikder Sunbeam Islam, Istiaq Hossain Chowdhury
Metamaterial absorption can be realized at extremely long wavelengths and across a broad range of frequencies for spectroscopic applications. Among these, terahertz (THz) spectroscopy has gained increasing adoption for sensing applications due to its distinctive optical characteristics. This study proposes and numerically investigates a perfect absorber (PA) in THz spectroscopy, comprising a periodic array of indium antimonide (InSb), a reflector, and a dielectric substrate. Numerical outcomes indicate that the PA is able to obtain 99.9% absorption at 1.748 THz under the surrounding temperature (T = 295 K) and exhibits a Q-factor of approximately 26.4. To interpret the underlying physics of the proposed PA, impedance matching theory, the spatial distribution of the electric field, and power loss density are discussed. The proposed structure demonstrates exceptional stability across a broad spectrum of incidence angles. Furthermore, it delivers simultaneous high sensing performance. The surrounding temperature significantly affects the optical properties of InSb, resulting in a temperature sensitivity of 11.38 GHz/K. The suggested PA can be useful in refractive index (RI) sensing due to its higher sensitivity and greater Q-factor. It has an RI sensitivity of roughly 1452 GHz/RIU. Therefore, the designed tunable THz PA can be extensively employed in sensing, detection, and other associated optoelectronic devices because of its enhanced sensing performances.
{"title":"Temperature tunable terahertz perfect absorber based on InSb micro-ring-shaped structure for enhanced sensing application","authors":"Sarwar Uddin, Abdullah Mohammad Mustakim, Sikder Sunbeam Islam, Istiaq Hossain Chowdhury","doi":"10.1007/s11082-026-08680-z","DOIUrl":"10.1007/s11082-026-08680-z","url":null,"abstract":"<div><p>Metamaterial absorption can be realized at extremely long wavelengths and across a broad range of frequencies for spectroscopic applications. Among these, terahertz (THz) spectroscopy has gained increasing adoption for sensing applications due to its distinctive optical characteristics. This study proposes and numerically investigates a perfect absorber (PA) in THz spectroscopy, comprising a periodic array of indium antimonide (InSb), a reflector, and a dielectric substrate. Numerical outcomes indicate that the PA is able to obtain 99.9% absorption at 1.748 THz under the surrounding temperature (T = 295 K) and exhibits a Q-factor of approximately 26.4. To interpret the underlying physics of the proposed PA, impedance matching theory, the spatial distribution of the electric field, and power loss density are discussed. The proposed structure demonstrates exceptional stability across a broad spectrum of incidence angles. Furthermore, it delivers simultaneous high sensing performance. The surrounding temperature significantly affects the optical properties of InSb, resulting in a temperature sensitivity of 11.38 GHz/K. The suggested PA can be useful in refractive index (RI) sensing due to its higher sensitivity and greater Q-factor. It has an RI sensitivity of roughly 1452 GHz/RIU. Therefore, the designed tunable THz PA can be extensively employed in sensing, detection, and other associated optoelectronic devices because of its enhanced sensing performances.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1007/s11082-025-08658-3
Ting-Han Pei
In this study, we propose a micro neutron star-like gravity model to explain the phenomenon of superluminal response in quantum entanglement experiments. In our model, measurements of the spin state of one electron may cause that electron to emit ultralong-wavelength photons to inform another entangled electron. Therefore, one electron will be connected to another electron through the Coulomb interaction of ultra-low energy photons. The scattering of ultra-long wavelength light can be ignored, and only the super-strong gravity around the atomic nucleus is considered. In this model, the ultra-long wavelength light close to the atomic nucleus is mainly affected by the super-strong gravitational field of each atomic nucleus, and the time passing through each atomic nucleus will be shortened by Δt on average, and a superluminal response is finally observed. Our model does not violate special relativity but discusses the measurements between different reference coordinates within the framework of general relativity.
{"title":"The explanation of the superluminal response between two quantum-entangled electrons based on the micro super-strong gravitational sources","authors":"Ting-Han Pei","doi":"10.1007/s11082-025-08658-3","DOIUrl":"10.1007/s11082-025-08658-3","url":null,"abstract":"<div><p>In this study, we propose a micro neutron star-like gravity model to explain the phenomenon of superluminal response in quantum entanglement experiments. In our model, measurements of the spin state of one electron may cause that electron to emit ultralong-wavelength photons to inform another entangled electron. Therefore, one electron will be connected to another electron through the Coulomb interaction of ultra-low energy photons. The scattering of ultra-long wavelength light can be ignored, and only the super-strong gravity around the atomic nucleus is considered. In this model, the ultra-long wavelength light close to the atomic nucleus is mainly affected by the super-strong gravitational field of each atomic nucleus, and the time passing through each atomic nucleus will be shortened by Δ<i>t</i> on average, and a superluminal response is finally observed. Our model does not violate special relativity but discusses the measurements between different reference coordinates within the framework of general relativity.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08658-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}