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Relativistic frequency shifting of laser carrying orbital angular momentum in a magnetized plasma 磁化等离子体中携带轨道角动量的激光的相对论频移
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-13 DOI: 10.1007/s11082-025-08618-x
Hitendra K. Malik, Subhajit Bhaskar

The article investigates the frequency shifting of a laser carrying orbital angular momentum (OAM) in a cold collisionless plasma under the impact of a static magnetic field applied in the axial direction. Spatio-temporal variation of the laser intensity profile is investigated considering relativistic mass increase of the plasma electrons. Nonlinear Schrodinger equation is derived using Wentzel -Kramers - Brillouin (WKB) method and slowly varying envelope approximation. The frequency shifting is then discussed in connection with the spatio-temporal variation of the laser intensity. The effects of magnetic field along with the effects of the polarization states are discussed in detail. The relativistic frequency shifting is observed to enhance both rear side and front side of the pulse with the applied magnetic field. It is also observed that right circularly polarized (RCP) lasers undergo stronger shifting than the left circularly polarized (LCP) lasers. The results obtained in this article may find application in twisted harmonic generation, particle acceleration, optical manipulation and so on.

本文研究了带轨道角动量的激光在冷无碰撞等离子体中在轴向静磁场作用下的频移。考虑等离子体电子质量的相对论性增加,研究了激光强度分布的时空变化。利用WKB方法和慢变包络近似导出了非线性薛定谔方程。然后讨论了频移与激光强度时空变化的关系。详细讨论了磁场的影响以及极化态的影响。在外加磁场作用下,相对论频移增强了脉冲的前后方向。右圆偏振(RCP)激光器比左圆偏振(LCP)激光器发生更强的位移。所得结果可应用于扭谐波产生、粒子加速、光学操纵等领域。
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引用次数: 0
Anti-reflective and optical transparent coatings fabricated by a computer-controlled system 由计算机控制系统制备的抗反射和光学透明涂层
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1007/s11082-026-08675-w
Yasemin Demirhan

In this study, an antireflection (AR) coating based on SiO2 was controllably deposited using a computer-programmed CNC system and evaluated for its performance. A unique, automated high-precision technique was employed for AR layer deposition. Transmission and reflectance measurements were conducted using a UV–Vis spectrophotometer, while the photocatalytic performance of the AR layers was assessed using a methylene blue dye solution under UV illumination. The AR-coated glass was mounted on a monocrystalline silicon solar cell, and the I-V and P-V characteristic curves were obtained. The best-performing AR-coated solar cell exhibited an open-circuit voltage (Voc) of 0.61 V and a short-circuit current density (Isc) of 41.6 mA/cm2, resulting in a 2% increase in efficiency compared to the uncoated device. The CNC-controlled deposition process enabled precise tuning of parameters such as immersion speed, withdrawal speed, dwell time, and alignment, ensuring uniform coatings and enhanced optical performance. Field tests confirmed the low reflectance and improved efficiency of AR-coated solar panels. These findings highlight the potential of SiO2-based AR coatings for enhancing solar cell performance while maintaining mechanical stability.

在本研究中,使用计算机编程的CNC系统控制沉积了基于SiO2的增透涂层,并对其性能进行了评估。采用了一种独特的自动化高精度AR层沉积技术。通过紫外-可见分光光度计进行透射和反射率测量,同时使用亚甲基蓝染料溶液在紫外照明下评估AR层的光催化性能。将ar镀膜玻璃安装在单晶硅太阳能电池上,得到了其I-V和P-V特性曲线。性能最好的ar包覆太阳能电池的开路电压(Voc)为0.61 V,短路电流密度(Isc)为41.6 mA/cm2,与未包覆的太阳能电池相比,效率提高了2%。cnc控制的沉积过程能够精确调整参数,如浸泡速度,提取速度,停留时间和对准,确保均匀的涂层和增强的光学性能。现场测试证实了ar涂层太阳能电池板的低反射率和提高的效率。这些发现突出了基于sio2的AR涂层在保持机械稳定性的同时提高太阳能电池性能的潜力。
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引用次数: 0
Tunable 1-D photonic crystal sensor for high temperature measurement by introducing double defect mode within successive layers of gallium nitride and silicon nitride 在氮化镓和氮化硅连续层内引入双缺陷模式,用于高温测量的可调谐一维光子晶体传感器
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1007/s11082-026-08667-w
Barnali Pal, Bibhatsu Kuiri, Saikat Santra, Dipankar Biswas, Probodh Kumar Kuiri, Ardhendu Sekhar Patra

This paper explores the sensing capabilities of one-dimensional (1-D) photonic crystals (PC) based on the thermo-optic effect in alternating layers of Gallium Nitride (GaN) and Silicon Nitride (Si3N4) with double defect layers of air under the application of very high temperatures, ranging from 1000℃ to 1700℃ in 50℃ temperature increments. The proposed new structure of double defect layers enhances sensing efficiency by generating two distinct resonance modes. The principle of the 1-D PC is explained by its optical behaviour, specifically photonic band gap (PBG) without and with defect layers. The temperature sensing efficiency is developed by adding defect layers in the PC, which enables it to transmit two resonance peaks due to double defect layers. The transmission and reflection behaviour of PC is plotted using the computational method, and the numerical values of the proposed sensor are calculated by the well-known transfer matrix method (TMM), resulting in the effective parameters like sensitivity, quality factor (Q-factor), full width at half maxima (FWHM) of the PC. The sensitivity of the sensor for mode − 1 is approximately 0.008 nm/℃, while the sensitivity for mode − 2 is about 0.014 nm/℃. The FWHM of the resonance peaks for mode − 1 and mode-2 are 6.3 nm and 10.832 nm, respectively, at a temperature of 1000℃. The Q-factors for mode − 1 and mode − 2 are 158.512 and 125.802, respectively, at 1000℃.

本文研究了氮化镓(GaN)和氮化硅(Si3N4)双缺陷层交替存在的一维光子晶体(PC)在高温下的传感能力,温度增量为50℃,温度范围从1000℃到1700℃。提出的双缺陷层结构通过产生两种不同的共振模式来提高传感效率。一维PC的原理由其光学特性,特别是无缺陷层和有缺陷层的光子带隙(PBG)来解释。通过在PC中增加缺陷层来提高温度传感效率,使其能够由于双缺陷层而传输两个共振峰。利用计算方法绘制了PC的透射和反射特性,并利用众所周知的传递矩阵法(TMM)计算了所提出的传感器的数值,得到了PC的灵敏度、质量因子(Q-factor)、半最大值全宽度(FWHM)等有效参数。该传感器对−1模式的灵敏度约为0.008 nm/℃,对−2模式的灵敏度约为0.014 nm/℃。当温度为1000℃时,−1模式和−2模式的峰宽分别为6.3 nm和10.832 nm。在1000℃时,−1型和−2型的q因子分别为158.512和125.802。
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引用次数: 0
Temperature tunable terahertz perfect absorber based on InSb micro-ring-shaped structure for enhanced sensing application 基于InSb微环结构的温度可调太赫兹完美吸收体增强传感应用
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1007/s11082-026-08680-z
Sarwar Uddin, Abdullah Mohammad Mustakim, Sikder Sunbeam Islam, Istiaq Hossain Chowdhury

Metamaterial absorption can be realized at extremely long wavelengths and across a broad range of frequencies for spectroscopic applications. Among these, terahertz (THz) spectroscopy has gained increasing adoption for sensing applications due to its distinctive optical characteristics. This study proposes and numerically investigates a perfect absorber (PA) in THz spectroscopy, comprising a periodic array of indium antimonide (InSb), a reflector, and a dielectric substrate. Numerical outcomes indicate that the PA is able to obtain 99.9% absorption at 1.748 THz under the surrounding temperature (T = 295 K) and exhibits a Q-factor of approximately 26.4. To interpret the underlying physics of the proposed PA, impedance matching theory, the spatial distribution of the electric field, and power loss density are discussed. The proposed structure demonstrates exceptional stability across a broad spectrum of incidence angles. Furthermore, it delivers simultaneous high sensing performance. The surrounding temperature significantly affects the optical properties of InSb, resulting in a temperature sensitivity of 11.38 GHz/K. The suggested PA can be useful in refractive index (RI) sensing due to its higher sensitivity and greater Q-factor. It has an RI sensitivity of roughly 1452 GHz/RIU. Therefore, the designed tunable THz PA can be extensively employed in sensing, detection, and other associated optoelectronic devices because of its enhanced sensing performances.

超材料吸收可以在非常长的波长和光谱应用的广泛频率范围内实现。其中,太赫兹(THz)光谱由于其独特的光学特性,在传感应用中得到了越来越多的采用。本研究提出并数值研究了一种完美的太赫兹光谱吸收器(PA),它由锑化铟(InSb)的周期性阵列、反射器和介电衬底组成。数值结果表明,在周围温度(T = 295 K)为1.748 THz时,PA能获得99.9%的吸收,其q因子约为26.4。为了解释所提出的PA的基本物理特性,阻抗匹配理论,电场的空间分布和功率损耗密度进行了讨论。所提出的结构在广泛的入射角范围内表现出优异的稳定性。此外,它提供了同时高传感性能。周围温度对InSb的光学特性有显著影响,温度灵敏度为11.38 GHz/K。该方法具有较高的灵敏度和较大的q因子,可用于折射率(RI)传感。它的RI灵敏度大约为1452 GHz/RIU。因此,设计的可调谐太赫兹放大器由于其增强的传感性能,可以广泛应用于传感、检测和其他相关的光电器件中。
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引用次数: 0
The explanation of the superluminal response between two quantum-entangled electrons based on the micro super-strong gravitational sources 基于微观超强引力源的两个量子纠缠电子之间超光速响应的解释
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1007/s11082-025-08658-3
Ting-Han Pei

In this study, we propose a micro neutron star-like gravity model to explain the phenomenon of superluminal response in quantum entanglement experiments. In our model, measurements of the spin state of one electron may cause that electron to emit ultralong-wavelength photons to inform another entangled electron. Therefore, one electron will be connected to another electron through the Coulomb interaction of ultra-low energy photons. The scattering of ultra-long wavelength light can be ignored, and only the super-strong gravity around the atomic nucleus is considered. In this model, the ultra-long wavelength light close to the atomic nucleus is mainly affected by the super-strong gravitational field of each atomic nucleus, and the time passing through each atomic nucleus will be shortened by Δt on average, and a superluminal response is finally observed. Our model does not violate special relativity but discusses the measurements between different reference coordinates within the framework of general relativity.

在这项研究中,我们提出了一个微中子星重力模型来解释量子纠缠实验中的超光速响应现象。在我们的模型中,测量一个电子的自旋状态可能会导致该电子发射超长波长的光子来通知另一个纠缠的电子。因此,一个电子将通过超低能光子的库仑相互作用与另一个电子连接。超长波长光的散射可以忽略不计,只考虑原子核周围的超强引力。在该模型中,靠近原子核的超长波长光主要受到各原子核超强引力场的影响,通过各原子核的时间平均会缩短Δt,最终观测到超光速响应。我们的模型不违反狭义相对论,而是在广义相对论的框架内讨论不同参考坐标之间的测量。
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引用次数: 0
Colour tunable luminescence and energy transfer in thermally stable calcium antimony fluoroborate glasses with Tb3+/Sm3+ for optoelectronic applications 用于光电应用的Tb3+/Sm3+热稳定氟硼酸钙锑玻璃的颜色可调发光和能量转移
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-10 DOI: 10.1007/s11082-025-08657-4
Vertika Siwach, M. Jayasimhadri

In this study, calcium antimony fluoroborate (CAFB) glass matrices were designed with single doping of Tb3+ (CAFBTb), Sm3+ (CAFBSm), and co-doping of Tb3+/Sm3+ (CAFBTbSm) ions using the procedure of melt quenching. The structural characteristics of the titled glasses were examined with the help of diffraction profiles. Under appropriate n-UV excitation wavelengths, all the prepared CAFBTb glasses demonstrate an intense green (542 nm) emission related to the 5D47F5 transition, in which the intensity of the emission peak consistently rises with the Tb3+ ion content till 2.5 mol%. In CAFBSm glasses, a prominent orangish-red emission peak has been observed around 598 nm (4G5/26H7/2 transition) at 402 nm excitation. Furthermore, a gradual decrease in the emission intensities of Tb3+ bands and an increase in the emission intensities of Sm3+ were observed simultaneously in the CAFBTbSm glasses with increasing activator concentration. This behaviour suggests the occurrence of an energy transfer (ET) process from donor (Tb3+) to acceptor (Sm3+) ions. This mechanism of transferring energy from Tb3+ to Sm3+ was proved to be an interaction of dipole-dipole (d-d) via employing Dexter and Reisfeld’s theoretical model. The colour tunability of the CAFBTbSm glasses could be adjusted from the green to the white domain via greenish yellow under 378 nm excitation and by varying the amount of the activator ion concentrations. Under n-UV excitation, the PL lifetime analysis indicates a bi-exponential decay behaviour in the co-doped glasses. Additionally, the emission intensity of the prepared CAFBTbSm glasses was maintained at 88.22% of the initial emission intensity at 25 °C when measured at 100 °C, signifying that these glasses possess exceptional thermal stability and relatively higher activation energy. All the aforementioned findings authorised the feasibility of the titled CAFBTbSm glasses for potential usage in the realm of optoelectronic device applications, especially for white light emitting diode (w-LED) applications.

本研究采用熔体淬火的方法,设计了单掺杂Tb3+ (CAFBTb)、Sm3+ (CAFBSm)和共掺杂Tb3+/Sm3+ (CAFBTbSm)离子的氟硼酸锑钙(CAFB)玻璃基体。利用衍射曲线分析了标题玻璃的结构特征。在适当的n-UV激发波长下,所有制备的CAFBTb玻璃都表现出与5D4→7F5跃迁有关的强烈的绿色(542 nm)发射,其中发射峰的强度随着Tb3+离子含量的增加而持续上升,直到2.5 mol%。在CAFBSm玻璃中,在402 nm激发下,在598 nm (4G5/2→6H7/2跃迁)附近观察到一个明显的橙红色发射峰。此外,在CAFBTbSm玻璃中,随着活化剂浓度的增加,Tb3+波段的发射强度逐渐降低,Sm3+的发射强度同时增加。这种行为表明从供体(Tb3+)离子到受体(Sm3+)离子发生了能量转移(ET)过程。利用Dexter和Reisfeld的理论模型证明了Tb3+向Sm3+传递能量的机制是一种偶极子-偶极子(d-d)相互作用。在378nm激发下,通过改变激活离子浓度的量,CAFBTbSm玻璃的颜色可调性可以从绿色到白色进行调节。在n-UV激发下,PL寿命分析表明共掺杂玻璃具有双指数衰减行为。此外,在所制备的CAFBTbSm玻璃在100℃下测量时,其发射强度保持在25℃时初始发射强度的88.22%,表明该玻璃具有优异的热稳定性和较高的活化能。上述所有发现都证明了CAFBTbSm玻璃在光电器件应用领域,特别是白光发光二极管(w-LED)应用领域的潜在应用可行性。
{"title":"Colour tunable luminescence and energy transfer in thermally stable calcium antimony fluoroborate glasses with Tb3+/Sm3+ for optoelectronic applications","authors":"Vertika Siwach,&nbsp;M. Jayasimhadri","doi":"10.1007/s11082-025-08657-4","DOIUrl":"10.1007/s11082-025-08657-4","url":null,"abstract":"<div>\u0000 \u0000 <p>In this study, calcium antimony fluoroborate (CAFB) glass matrices were designed with single doping of Tb<sup>3+</sup> (CAFBTb), Sm<sup>3+</sup> (CAFBSm), and co-doping of Tb<sup>3+</sup>/Sm<sup>3+</sup> (CAFBTbSm) ions using the procedure of melt quenching. The structural characteristics of the titled glasses were examined with the help of diffraction profiles. Under appropriate n-UV excitation wavelengths, all the prepared CAFBTb glasses demonstrate an intense green (542 nm) emission related to the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>5</sub> transition, in which the intensity of the emission peak consistently rises with the Tb<sup>3+</sup> ion content till 2.5 mol%. In CAFBSm glasses, a prominent orangish-red emission peak has been observed around 598 nm (<sup>4</sup>G<sub>5/2</sub> → <sup>6</sup>H<sub>7/2</sub> transition) at 402 nm excitation. Furthermore, a gradual decrease in the emission intensities of Tb<sup>3+</sup> bands and an increase in the emission intensities of Sm<sup>3+</sup> were observed simultaneously in the CAFBTbSm glasses with increasing activator concentration. This behaviour suggests the occurrence of an energy transfer (ET) process from donor (Tb<sup>3+</sup>) to acceptor (Sm<sup>3+</sup>) ions. This mechanism of transferring energy from Tb<sup>3+</sup> to Sm<sup>3+</sup> was proved to be an interaction of dipole-dipole (d-d) via employing Dexter and Reisfeld’s theoretical model. The colour tunability of the CAFBTbSm glasses could be adjusted from the green to the white domain via greenish yellow under 378 nm excitation and by varying the amount of the activator ion concentrations. Under n-UV excitation, the PL lifetime analysis indicates a bi-exponential decay behaviour in the co-doped glasses. Additionally, the emission intensity of the prepared CAFBTbSm glasses was maintained at 88.22% of the initial emission intensity at 25 °C when measured at 100 °C, signifying that these glasses possess exceptional thermal stability and relatively higher activation energy. All the aforementioned findings authorised the feasibility of the titled CAFBTbSm glasses for potential usage in the realm of optoelectronic device applications, especially for white light emitting diode (w-LED) applications.</p>\u0000 </div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 2","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab-initio study of the structural, mechanical, electronic, optical, and thermal characteristics of lead-free double perovskites Cs₂TlAX₆ (A = As, Sb; X = Cl, Br, I) under hydrostatic pressure 无铅双钙钛矿Cs₂TlAX₆(A = As, Sb; X = Cl, Br, I)在静水压力下的结构、机械、电子、光学和热特性的从头算研究
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-10 DOI: 10.1007/s11082-025-08650-x
Md. Atikur Rahman, Ahmad Irfan, Md. Nadim Mahamud Nobin, Mst. Asma Khatun, Md. Ferdous Rahman

Lead-free double halide perovskites, specifically Cs₂TlAX₆ (A = As, Sb; X = Cl, Br, I), offer key advantages over lead-based versions, including strong optical absorption, high structural and thermal stability, superior carrier mobility, tunable band gaps, non-toxicity, and cost-effectiveness. Their mechanical, electrical, optical, and thermal properties were investigated using DFT with the PBE functional under ambient and hydrostatic pressures. Stability was confirmed through formation enthalpy, tolerance factor, and elastic constants. Pugh’s and Poisson’s ratios suggest these compounds are generally ductile (except Cs₂TlAsBr₆), with pressure-enhanced machinability, reduced friction, and increased plastic strain. Band structure analysis using the GGA-PBE approximation shows the direct band gap semiconducting nature of Cs₂TlAX₆ (A = As, Sb; X = Cl, Br, I), where the band gap values are ranging from 0.957 to 1.697 eV. However, the TB-mBJ functional efficiently moderates the GGA-PBE underestimation, yielding refined band gaps between 1.22 and 2.17 eV—values which are more efficient solar applications. Pressure-induced band gap tuning highlights potential for optoelectronic device applications. Their narrow band gaps and strong absorption make them suitable for solar cells, while high infrared reflectivity and low thermal conductivity indicate potential as thermal barrier coatings (TBCs).

无铅双卤化物钙钛矿,特别是Cs₂TlAX₆(A = As, Sb; X = Cl, Br, I),与铅基版本相比具有关键优势,包括强光学吸收,高结构和热稳定性,优越的载流子迁移率,可调带隙,无毒性和成本效益。在环境压力和静水压力下,利用DFT和PBE功能研究了它们的机械、电学、光学和热性能。通过地层焓、容差系数和弹性常数确定了稳定性。皮尤比和泊松比表明,这些化合物通常具有延展性(除了c2tlasbr₆),具有增强的可加工性、减少的摩擦和增加的塑性应变。采用GGA-PBE近似的能带结构分析表明,Cs₂TlAX₆(A = As, Sb; X = Cl, Br, I)具有直接带隙半导体性质,其带隙值在0.957 ~ 1.697 eV之间。然而,TB-mBJ功能有效地调节了GGA-PBE的低估,产生了1.22和2.17 ev值之间的精细带隙,这是更有效的太阳能应用。压力诱导带隙调谐突出了光电器件应用的潜力。其窄带隙和强吸收性使其适合用于太阳能电池,而高红外反射率和低热导率表明其作为热障涂层(tbc)的潜力。
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引用次数: 0
Enhanced patch low-loss frequency reconfigured antenna using PIN and varactor diodes switching for mm-wave applications 使用PIN和变容二极管开关的毫米波应用增强贴片低损耗频率重新配置天线
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-10 DOI: 10.1007/s11082-026-08669-8
Simerpreet Singh, Deepinder Singh Wadhwa, Jaspal Singh Khinda, Atul Varshney

This communication focused on the design development of a low-loss, patch size enhancement and a wideband four-element monopole antenna for Ka-band and millimetre wave (mm-wave) communications. This study presents the 4-patch duplication antenna, which has frequency reconfigurability via two PIN diodes and frequency sensitivity via one varactor diode. The proposed technology provides an alternative to tediously built antenna arrays. A small Rogers RT Duroid 5880 (0.508 mm) makes the antenna low-loss. The affect of varactor biasing on tuning linearity, stability, and repeatability have been studied. Excellent impedance matching at 32.5 GHz is achieved with this patch-size enhancement approach. One-element antennas without slots have a peak gain of 6.79 dBi at 32.5 GHz, while slot antenna have 7.02 dBi. The improved four-element array antenna increases the gain to 8.32 dBi. Gain is further improved to 9.81 dBi with the digital modes of PIN diodes. The measured reflections ((:{text{S}}_{11})) and radiation properties were found to be consistent with the simulations. The suggested antenna performs well between 26 GHz and 40 GHz, as evidenced by its − 10 dB bandwidth and results. The observed data showed that the proposed design is suitable for mm-wave and 5G sub-6 GHz frequency range 2 (FR2), and beyond applications.

本次通信的重点是设计开发低损耗、贴片尺寸增强和宽带四元单极天线,用于ka波段和毫米波(mm波)通信。该天线通过两个PIN二极管具有频率可重构性,通过一个变容二极管具有频率灵敏度。提出的技术提供了一种替代繁琐的天线阵列。采用小尺寸Rogers RT Duroid 5880 (0.508 mm),使天线具有低损耗。研究了变容偏置对调谐线性度、稳定性和可重复性的影响。通过这种补丁尺寸增强方法,可以实现32.5 GHz的出色阻抗匹配。无槽单单元天线在32.5 GHz时的峰值增益为6.79 dBi,而槽天线的峰值增益为7.02 dBi。改进后的四元阵列天线将增益提高到8.32 dBi。通过PIN二极管的数字模式,增益进一步提高到9.81 dBi。测量的反射((:{text{S}}_{11})))和辐射特性与模拟结果一致。该天线在26ghz ~ 40ghz范围内性能良好,带宽为- 10db。实测数据表明,该设计适用于毫米波和5G sub- 6ghz频率范围2 (FR2)及以上的应用。
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引用次数: 0
Anisotropic terahertz graphene metamaterial multi-band absorber based on an orthogonal dual-ribbon configuration 基于正交双带结构的各向异性太赫兹石墨烯超材料多波段吸收体
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-09 DOI: 10.1007/s11082-026-08673-y
Somayyeh Asgari, Tapio Fabritius

This study presents a dynamically reconfigurable anisotropic graphene-based metamaterial absorber operating across the 0.5–4.7 THz range. The unit-cell design, composed of two orthogonal pairs of graphene ribbons, produces direction- and polarization-dependent electromagnetic responses. Numerical simulations using CST Studio Suite, complemented by an equivalent circuit model (ECM) analyzed in MATLAB, reveal the transverse electric (TE) and transverse magnetic (TM) resonances. At a Fermi energy of 0.6 eV, the absorber demonstrates high tunability and pronounced linear dichroism (LD) up to 99.1%. The structure supports four TE and two TM high-absorption resonances, achieving absorption rates above 94.5% and 82%, with peak values of 99.68% (TE) and 99.92% (TM). These distinct TE/TM spectral fingerprints offer strong potential for polarization-sensitive THz devices, photonic platforms, and Frequency-Encoded Secure Identification (FESID) applications.

本研究提出了一种动态可重构的各向异性石墨烯基超材料吸收体,工作在0.5-4.7太赫兹范围内。单电池设计由两对正交的石墨烯带组成,产生方向和极化相关的电磁响应。利用CST Studio Suite进行数值模拟,并辅以MATLAB分析的等效电路模型(ECM),揭示了横向电(TE)和横向磁(TM)共振。在0.6 eV的费米能量下,吸收体表现出高的可调性和显著的线性二色性(LD)高达99.1%。该结构支持4个TE和2个TM高吸收共振,吸收率达到94.5%和82%以上,峰值为99.68% (TE)和99.92% (TM)。这些独特的TE/TM光谱指纹为极化敏感的太赫兹器件、光子平台和频率编码安全识别(FESID)应用提供了强大的潜力。
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引用次数: 0
Nonlinear optical absorption in CdS thin films at 1030 nm and 515 nm CdS薄膜在1030nm和515nm处的非线性光学吸收
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-09 DOI: 10.1007/s11082-025-08663-6
R. A. Ganeev, Y. A. Buriyev, V. V. Kim, B. K. Eshchanov, B. R. Sobirov, M. K. Kodirov, I. B. Sapaev, S. Sadullaev

The CdS nanocrystallite films prepared by thermal deposition are characterized by different morphological and optical methods. The nonlinear optical absorption of 1030 nm and 515 nm, 200 fs radiation in the films is determined. The competition of saturable absorption and two-photon absorption is shown in the case of the variation of the pulse energies of the visible and infrared radiation. We show the overlap of the positive and negative nonlinear absorption in different energy ranges of the probe pulses. The saturated intensities of the CdS film are determined to be 1.7 × 1012 W cm−2 in the case of 1030 nm probe pulses and 1.3 × 1011 W cm−2 in the case of 515 nm probe pulses. The two-photon absorption coefficient in the case of 1030 nm pulses is calculated to be 4.7 × 10−8 cm W−1. The two-photon absorption coefficient in the case of 515 nm probe pulses is determined to be 8 × 10−8 cm W−1.

用不同的形态学和光学方法对热沉积法制备的CdS纳米晶薄膜进行了表征。测定了薄膜在1030nm和515nm, 200fs辐射下的非线性光吸收。在可见和红外辐射脉冲能量变化的情况下,显示了饱和吸收和双光子吸收的竞争。在不同的探测脉冲能量范围内,我们发现了正非线性和负非线性吸收的重叠。在1030nm的探测脉冲下,CdS薄膜的饱和强度为1.7 × 1012w cm−2,在515nm的探测脉冲下,饱和强度为1.3 × 1011w cm−2。在1030nm脉冲情况下,双光子吸收系数为4.7 × 10−8 cm W−1。测定了515 nm探针脉冲的双光子吸收系数为8 × 10−8 cm W−1。
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引用次数: 0
期刊
Optical and Quantum Electronics
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