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Post-fabrication tunable dual-band bandpass THz plasmonic filter with optical LC control and electrically tuned graphene 后制可调谐双带带通太赫兹等离子体滤波器与光学LC控制和电调谐石墨烯
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-14 DOI: 10.1007/s11082-026-08713-7
Iman Razmkhah, Zahra Adelpour, Mojtaba Sadeghi

A dual-band graphene-based plasmonic bandpass filter with hybrid post-fabrication tunability is presented for terahertz (THz) networks. The proposed structure consists of a graphene nanoribbon waveguide coupled to two sets of branched resonant stubs placed on a silica substrate and covered with an azo-dye-doped liquid crystal (LC) layer. In the designed structure post-fabrication hybrid tunability is achieved by two elements which are electrical control via graphene chemical potential and all-optical control through laser-induced reorientation of LC molecules. Numerical simulations show two controllable passbands centered near 2 THz and 5.75 THz accompanied by deep reflection minima below − 33 dB. The all-optical tuning method enables continuous frequency reconfiguration by modifying the effective permittivity of the LC layer, while electrical gating provides a complementary tuning channel through carrier-density modulation in graphene. An analytical model based on the transmission-line method (TLM) is developed by the electrostatic scaling law (ESL) to validate the full-wave results and provide physical insight. The analytical predictions show excellent agreement with full-wave simulations, with frequency deviations below 5%. The loaded quality factors are extracted as 20 and 31 for the lower and upper bands, respectively. Owing to its compact footprint (350 nm × 420 nm), dual-band operation, and independent hybrid tunability, the proposed filter is a strong candidate for reconfigurable integrated THz plasmonic systems.

提出了一种用于太赫兹(THz)网络的双波段石墨烯基等离子体带通滤波器,具有混合制后可调性。所提出的结构包括石墨烯纳米带波导耦合到放置在二氧化硅衬底上的两组分支谐振桩,并覆盖偶氮染料掺杂液晶(LC)层。在设计的结构中,通过石墨烯化学势的电气控制和激光诱导LC分子重定向的全光控制两种元件实现了复合可调性。数值模拟结果表明,在2 THz和5.75 THz附近有两个可控通带,深反射最小值低于−33 dB。全光调谐方法通过改变LC层的有效介电常数实现连续的频率重构,而电门控通过石墨烯中的载流子密度调制提供了一个互补的调谐通道。利用静电标度定律(ESL)建立了基于传输在线法(TLM)的分析模型,以验证全波结果并提供物理见解。分析预测结果与全波模拟结果非常吻合,频率偏差低于5%。提取下、上波段的载荷质量因子分别为20和31。由于其紧凑的占地面积(350 nm × 420 nm),双频工作和独立的混合可调性,所提出的滤波器是可重构集成太赫兹等离子体系统的有力候选者。
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引用次数: 0
Lead-free new perovskites for durable visible/UV optoelectronics and thermoelectric harvesting for energy technologies 新型无铅钙钛矿,用于耐用的可见/紫外光电子和能源技术的热电收集
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-12 DOI: 10.1007/s11082-026-08714-6
Muhammad Irfan, K. S. Al-Namshah

Halide perovskites have been getting much attention because of their impressive power conversion ability, allowing them to pursue entirely inorganic lead-free perovskites to achieve better solar performance without lead toxicity. The Physical properties of Cs2XInCl6 have been carried out using DFT-based calculations verified the stability with formation energy of -3.9 eV for Cs2SnInCl6 and − 1.8 eV for Cs2BiInCl6,respectively. The phonon dispersion analysis verifies the dynamical stability of systems by fundamental modes in the phonon spectrum. The band gap of the investigated material was tuned for use in renewable energy devices from 2.7 eV to 1.8 eV by applying modified Becke Jhonson (mBJ) and Spin orbit coupling (SOC) due to strongly correlated electrons system. The optical characteristics have been studied for optoelectronic purposes, including optical loss factor, optical conductivity, absorption, refraction, and dielectric constant. The ductility is demonstrated by high bulk-to-shear modulus ratios and positive Cauchy pressures of fracture toughness, demonstrating that Bi-based materials provide more resistance to crack propagation, indicating that it is appropriate for mechanically demanding applications. Thermoelectric computations show high Seebeck coefficients of 3.1 µV/K, power factors of 4 to 12.0 m.W/mK2s, and figure-of-merit (ZT) (0.8) at temperatures (600 K). These properties indicate that both compounds are encouraging for thermoelectric and in UV/visible optoelectronic devices.

卤化物钙钛矿因其令人印象深刻的能量转换能力而受到广泛关注,这使得他们能够追求完全无机的无铅钙钛矿,以实现更好的太阳能性能而不含铅毒性。利用dft计算方法对Cs2XInCl6的物理性质进行了分析,验证了Cs2SnInCl6和Cs2BiInCl6的形成能分别为-3.9 eV和- 1.8 eV时的稳定性。声子色散分析通过声子谱中的基本模验证了系统的动态稳定性。基于强相关电子系统,利用改进的Becke Jhonson (mBJ)和自旋轨道耦合(SOC),将所研究材料的带隙从2.7 eV调整到1.8 eV,适用于可再生能源器件。为了光电目的,研究了光学特性,包括光损耗因子、光电导率、吸收、折射和介电常数。高体积剪切模量比和断裂韧性的正柯西压力证明了其延展性,表明铋基材料具有更强的抗裂纹扩展能力,适合机械要求苛刻的应用。热电计算结果表明,塞贝克系数为3.1 μ V/K,功率因数为4 ~ 12.0 m。W/mK2s,在温度(600 K)下的品质系数(ZT)(0.8)。这些性质表明这两种化合物在热电和紫外/可见光电器件中都是令人鼓舞的。
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引用次数: 0
DFT insights into the structural, bond population, magnetic, optical, and elastic properties of AWH3 (A = Li, Na, K, and Cs) perovskite type hydrides for hydrogen storage applications DFT对AWH3 (A = Li, Na, K和Cs)钙钛矿型氢化物的结构,键居数,磁性,光学和弹性性质的见解,用于储氢应用
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-12 DOI: 10.1007/s11082-026-08712-8
Muhammad Riaz, Muhammad Waqas Mukhtar, Syed Mansoor Ali, A. Aziz, Rajeh Alotaibi, Muhammad Imran Saleem

The Pursuit of prospective materials for efficient hydrogen storage remains an inherent challenge for the scientific community. Perovskite hydrides gained considerable focus because of flexible composition, unique chemical and electronic behavior of hydrides ions. In this study, DFT calculations within the CASTEP framework using PBE-GGA and HSE03 functionals were employed to investigate the geometrical, electronic, optical, magnetic, mechanical, bond population, and hydrogen storage properties of AWH3 (A = Li, Na, K, and Cs) perovskite hydrides. These perovskites exhibit stable cubic structure and metallic character. Magnetically, all compounds reveal antiferromagnetic tendencies coupled with anisotropic and rigid behavior. Among the considered materials, LiWH3 demonstrates highest thermodynamic stability (F.E = − 4.47 eV) supported by phonon dispersion analysis. The hydrogen storage capacity (1.56 wt %), whereas CsWH3 exhibits the lowest values (F.E = − 2.53 eV, 0.95 wt %). From elastic constants (C11, C12, and C44), all compounds meet the born stability criteria, further confirmed the mechanical stability. Additionally, Poisson’s ratio (ν), Pugh’s ratio (B/G) ratio, and anisotropic factor indicate that all compounds exhibit ductile and anisotropic character, with NaWH3 standing out as the most ductile, along with superior values for Young’s modulus and shear modulus, signifying greater rigidity compared to LiWH3, CsWH3, and KWH3. In terms of optical performance, LiWH3 exhibits significant optical conductivity and absorption in the low-energy region, along with enhanced reflectivity and refractive index at 0 eV. Mulliken atomic and bond populations, effective valance, as well as charge density expose the complex bonding characteristics. The analysed properties proposed that LiWH3 stands out as the most promising candidate, outperformed in terms of stability, hydrogen storage capacity, and overall efficiency as compared to other AWH3 (A = Cs, Na, K) perovskite hydrides.

追求高效储氢的前瞻性材料仍然是科学界面临的固有挑战。钙钛矿氢化物因其灵活的组成、独特的化学和电子行为而受到广泛关注。在本研究中,利用PBE-GGA和HSE03泛函数在CASTEP框架下进行DFT计算,研究了AWH3 (A = Li, Na, K和Cs)钙钛矿氢化物的几何、电子、光学、磁性、机械、键居数和储氢性能。这些钙钛矿具有稳定的立方结构和金属性质。在磁性方面,所有化合物都表现出反铁磁倾向,并具有各向异性和刚性行为。声子色散分析表明,LiWH3具有最高的热力学稳定性(F.E = - 4.47 eV)。储氢量为1.56 wt %,而CsWH3的储氢量最小(F.E = - 2.53 eV, 0.95 wt %)。从弹性常数(C11, C12和C44)来看,所有化合物都符合born稳定性标准,进一步证实了其力学稳定性。泊松比(ν)、皮尤比(B/G)和各向异性因子均表明,所有化合物均表现出延性和各向异性特征,其中NaWH3的延性最强,杨氏模量和剪切模量也较好,与LiWH3、CsWH3和KWH3相比,其刚度更大。在光学性能方面,LiWH3在低能区表现出显著的光学导电性和吸收率,同时在0 eV下具有增强的反射率和折射率。Mulliken原子和键族,有效价,以及电荷密度揭示了复杂的键特性。分析的性质表明,与其他AWH3 (A = Cs, Na, K)钙钛矿氢化物相比,LiWH3在稳定性、储氢能力和整体效率方面表现优异,是最有希望的候选材料。
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引用次数: 0
Dispersion mitigation using cascaded FBGs with hybrid apodization profiles 利用混合离化结构的级联fbg减缓色散
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-11 DOI: 10.1007/s11082-026-08690-x
Rania M. Abdallah, Ferial M. Elbahi, Heba Y. Soliman, Islam E. Shaalan

The performance of high-speed optical communication systems is constrained by Chromatic Dispersion (CD), which poses a significant challenge to data transmission integrity. This paper proposes a method to mitigate CD using cascaded Apodized Fiber Bragg Gratings (AFBGs). The apodization function plays a crucial role in dispersion mitigation, effectively reducing side lobes in the Fiber Bragg Grating (FBG) reflection spectrum. The proposed model employs two cascaded stages, each utilizing an apodization function that merges the Nuttall and Bartlett profiles. This model is investigated to enhance FBG performance and is compared with other apodization functions. Using an induced refractive index of 2.8 × 10⁻⁵ and a grating length of 60 mm, numerical results show that the Nuttall-Bartlett apodization function achieves the narrowest Full Width at Half Maximum (FWHM) of 0.027 nm—a 20.48% improvement over the uniform model—while maintaining a reflectivity of 99.12%. The performance of the proposed model is further evaluated through the quality factor (Q-factor) and Bit Error Rate (BER), yielding an improvement in both metrics over the uniform model.

高速光通信系统的性能受到色散(CD)的制约,这对数据传输的完整性提出了重大挑战。本文提出了一种利用级联Apodized光纤Bragg光栅(AFBGs)减轻CD的方法。消光函数在色散抑制中起着至关重要的作用,可以有效地减少光纤光栅反射光谱中的侧瓣。提出的模型采用了两个级联阶段,每个阶段都使用了合并Nuttall和Bartlett剖面的apodiization函数。为了提高光纤光栅的性能,对该模型进行了研究,并与其他apoization函数进行了比较。在诱导折射率为2.8 × 10⁻- 5和光栅长度为60 mm的情况下,数值结果表明,Nuttall-Bartlett化函数在保持99.12%的反射率的同时,实现了最窄的半最大值全宽(FWHM)为0.027 nm,比均匀模型提高了20.48%。通过质量因子(Q-factor)和误码率(BER)进一步评估了所提出模型的性能,从而在统一模型的基础上改进了这两个指标。
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引用次数: 0
Photodetector properties of CdTe thin films and CdTe/Si heterojunctions produced by pulse laser ablation 脉冲激光烧蚀制备CdTe薄膜和CdTe/Si异质结的光电探测器特性
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-11 DOI: 10.1007/s11082-026-08708-4
Ahmet Tuna, Serap Yiğit Gezgin, Bedrettin Mercimek, Hamdi Şükür Kiliç

CdTe thin film photodetectors and CdTe/Si heterojunction photodetectors were fabricated by using PLD system. CdTe thin films were grown by increasing the amount of applied laser pulses. The surface morphology, crystal structure and optical characterization were investigated. The higher in the laser pulse number or energy cause the particle size to expand and the thin film thickness to increase and the band gap to decrease. In addition, the atomic weight ratio of Cd increased and that of Te decreased with the augment in the laser pulses number. CdTe thin film and CdTe/Si heterojunction materials exhibited photodetector properties under the 1sun of 100 mW/cm2. The photosensitivity, responsivity, detectivity and photocurrent gain of the photodetectors were calculated based on the opto-electronical measurements under 100 mW/cm2. The photodetector performance of CdTe/Si heterojunctions has been demonstrated to outperform that of CdTe thin films, exhibiting superior characteristics in terms of photosensitivity, responsivity, detectivity and photocurrent gain. In the crystalline characterization, XRD analysis revealed that all CdTe films were polycrystalline with mixed cubic and hexagonal phases, with grain size increasing and dislocation density decreasing as thickness grew. Based on the obtained SEM and AFM images it can be said that there are particle coalescence and island-like surface structures at higher thicknesses, directly proportional with the roughness. These findings demonstrate that CdTe thin films and CdTe/Si heterojunctions produced by employing PLD technique offer a simple pathway to tune optoelectronic properties, with heterojunction devices showing particular promise for future high-performance photodetectors.

利用PLD系统制备了CdTe薄膜光电探测器和CdTe/Si异质结光电探测器。通过增加施加激光脉冲的量来生长CdTe薄膜。研究了材料的表面形貌、晶体结构和光学特性。激光脉冲数或能量越高,粒子尺寸越大,薄膜厚度越大,带隙越小。随着激光脉冲数的增加,Cd的原子量比增大,Te的原子量比减小。CdTe薄膜和CdTe/Si异质结材料在100mw /cm2的1sun下表现出光电探测器的特性。通过在100mw /cm2下的光电测量,计算了光电探测器的光敏度、响应度、探测率和光电流增益。CdTe/Si异质结的光电探测器性能已被证明优于CdTe薄膜,在光敏性、响应性、探测性和光电流增益方面表现出优越的特性。在晶体表征方面,XRD分析表明,所有CdTe薄膜均为立方相和六方相混合的多晶,随着厚度的增加,晶粒尺寸增大,位错密度减小。根据获得的SEM和AFM图像,可以说在较高的厚度处存在颗粒聚结和岛状表面结构,与粗糙度成正比。这些发现表明,采用PLD技术生产的CdTe薄膜和CdTe/Si异质结提供了一种简单的途径来调整光电性能,异质结器件在未来的高性能光电探测器中显示出特别的前景。
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引用次数: 0
Simulation of ultrafast photonic circuits via nonlinear Schrödinger dynamics and quantum detector modeling 通过非线性Schrödinger动力学和量子探测器建模来模拟超快光子电路
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-11 DOI: 10.1007/s11082-026-08700-y
Dennis Delali Kwesi Wayo

This work presents a Python-based numerical simulation framework for integrated quantum photonic systems governed by the nonlinear Schrödinger equation (NLSE). The study models excitation, guided propagation, and detection of femtosecond optical pulses in chip-scale waveguides using the split-step Fourier method. To ensure both numerical clarity and physical relevance, two parameter regimes are employed: a normalized (dimensionless) formulation for algorithmic validation and envelope stability analysis, and a physically realistic SI-valued formulation for modeling soliton dynamics and broadband nonlinear effects. Input conditions include Gaussian and hyperbolic secant pulse envelopes with central wavelength (lambda _0 = 1550) nm and peak power ranging from 0.5 to 5 W. Representative waveguide lengths of (L = 2) mm are considered with grid resolutions of (Delta z = 0.01) mm and (Delta t = 0.1) fs. In the physical regime, dispersion and nonlinearity are modeled using parameters consistent with experimentally reported platforms, including (beta _2 approx -0.7,textrm{ps}^2/textrm{m}) and (gamma sim 10^2,textrm{W}^{-1},textrm{m}^{-1}). Simulation results demonstrate that low-dispersion regimes preserve temporal and spectral pulse integrity, while anomalous dispersion conditions produce soliton formation and spectral broadening consistent with reported supercontinuum generation in AlGaAs and (hbox {Si}_3{N}_4) waveguides. Transverse mode analysis confirms single-mode confinement, and phase evolution maps reveal coherent phase wrapping essential for quantum interference applications. A probabilistic photodetection model yields normalized detection rates consistent with experimentally reported efficiencies of InGaAs SPADs and superconducting nanowire single-photon detectors. The proposed framework provides an experimentally consistent and extensible NLSE-based simulation pipeline, supporting the co-design and optimization of nonlinear integrated photonic circuits for quantum information processing.

这项工作提出了一个基于python的非线性Schrödinger方程(NLSE)控制的集成量子光子系统的数值模拟框架。本研究采用分步傅立叶方法对芯片级波导中飞秒光脉冲的激发、引导传播和检测进行了建模。为了确保数值清晰度和物理相关性,采用了两种参数制度:用于算法验证和包络稳定性分析的归一化(无量纲)公式,以及用于模拟孤子动力学和宽带非线性效应的物理上真实的si值公式。输入条件包括高斯和双曲正割脉冲包络,中心波长(lambda _0 = 1550) nm,峰值功率为0.5至5w。代表性的波导长度为(L = 2) mm,网格分辨率分别为(Delta z = 0.01) mm和(Delta t = 0.1) fs。在物理状态下,色散和非线性使用与实验报告平台一致的参数进行建模,包括(beta _2 approx -0.7,textrm{ps}^2/textrm{m})和(gamma sim 10^2,textrm{W}^{-1},textrm{m}^{-1})。模拟结果表明,低色散状态保持了时间和光谱脉冲的完整性,而异常色散条件会产生孤子形成和光谱增宽,与报道的AlGaAs和(hbox {Si}_3{N}_4)波导中的超连续谱产生一致。横向模式分析证实了单模约束,而相位演化图揭示了量子干涉应用所必需的相干相位包裹。概率光探测模型产生的归一化探测率与实验报道的InGaAs spad和超导纳米线单光子探测器的效率一致。该框架提供了一个实验一致且可扩展的基于nlse的仿真管道,支持用于量子信息处理的非线性集成光子电路的协同设计和优化。
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引用次数: 0
Enhanced performance salinity sensor based on dual-wavelength laser speckle correlation 基于双波长激光散斑相关的增强型盐度传感器
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-11 DOI: 10.1007/s11082-026-08711-9
Carlos Angulo Barrios

This paper presents a simple signal processing procedure to enhance the performance of a free-space laser speckle-based salinity sensor system. The experimental setup comprises a cylindrical glass vessel containing the liquid sample of interest, which is probed by a light beam formed by merging two laser beams of different wavelengths. The mixed laser beam produces a speckle pattern that provides quantitative information on the sample concentration by correlation coefficient determination. The definition of a multiplicative fusion function, which involves the multiplication of the measured correlation coefficients for each two wavelengths, enhances the sensor’s sensitivity compared to a single-wavelength approach without altering the system noise, thereby increasing the signal-to-noise ratio. The combined product function allows the sensor system to exhibit high linearity at low concentrations, an enlarged output range, a salinity sensitivity of -0.853 /%, which is significantly higher than that reported for fiber optic speckle-based salinity sensors, and a limit of detection comparable to that offered by state-of-the-art, more complex, interferometer-based optical fiber salinity sensors.

为了提高自由空间激光散斑盐度传感器系统的性能,提出了一种简单的信号处理方法。实验装置由一个圆柱形玻璃容器组成,容器中装有所要检测的液体样品,该液体样品由两束不同波长的激光束合并形成的光束探测。混合激光束产生散斑图案,通过相关系数的测定提供了样品浓度的定量信息。乘法融合函数的定义涉及每两个波长的测量相关系数的乘法,与单波长方法相比,在不改变系统噪声的情况下提高了传感器的灵敏度,从而提高了信噪比。该组合产品功能允许传感器系统在低浓度下表现出高线性度,扩大输出范围,盐度灵敏度为-0.853 /%,明显高于基于光纤散斑的盐度传感器,并且检测极限可与最先进的,更复杂的基于干涉仪的光纤盐度传感器相比较。
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引用次数: 0
Dual-polarized single/multi-layer graphene tags for THz chipless identification with near-perfect absorption 双极化单层/多层石墨烯标签,用于太赫兹无芯片识别,具有近乎完美的吸收
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-09 DOI: 10.1007/s11082-026-08701-x
Amer Zakaria, Hend A. Malhat, Nasser Qaddoumi

This paper presents a high-capacity, compact chipless graphene tag for terahertz identification (THID) within the 2–7 THz range, using polarization-orthogonal encoding. The tag features graphene strip resonators embedded on a low-loss TOPAS substrate, with a gold ground plane. Independent responses to transverse electric/ transverse magnetic (TE/TM) fields are achieved by tuning the graphene’s impedance through chemical potential gating, µc. A single-bit tag with logic (0)/(1) using µc = 0/0.8 eV reaches a peak absorption of 5/99.9% at 3.29 THz with ultranarrow linewidths for TM-polarized waves and zero TE crosstalk, maintaining over 84% efficiency under oblique incidence up to 75°. Seven-bit linearly polarized (LP) tag configurations are designed by cascading graphene strips (lengths 2.4–7.5 μm, 0.52 THz spacing). LP tags cascaded in series with different chemical potentials are designed for 7-bit, 14-bit, and 21-bit encoding. Dual-polarized orthogonal encoding doubles the spectral capacity by providing independent TE/TM responses in both single- and multi-layer configurations, supporting 7-bit and 14-bit per polarization. Single-layer orthogonal tag designs enable 11–14 bits with distinct TE/TM peaks (77% – 100% absorption) through gating tuning. Finally, symmetrical multi-layer designs (1.5 μm dielectric separation, µc = 0, 0.8, and 0.9 eV) achieve 14/28-bit dual-polarized capacity (7/14 bits per polarization) across the frequency range of 2.72–4.14 THz, with 80% – 100% absorption efficiency for structures with two to four layers.

本文提出了一种高容量,紧凑的无芯片石墨烯标签,用于2-7太赫兹范围内的太赫兹识别(THID),使用偏振正交编码。该标签的特点是石墨烯条谐振器嵌入在低损耗的TOPAS衬底上,并带有金地平面。通过化学势门控(µc)调节石墨烯的阻抗,实现了对横向电/横向磁(TE/TM)场的独立响应。采用μ c = 0/0.8 eV的逻辑为(0)/(1)的单比特标签在3.29太赫兹时达到5/99.9%的峰值吸收,具有tm极化波的超窄线宽和零TE串扰,在倾斜入射高达75°的情况下保持超过84%的效率。7位线极化(LP)标签配置由级联石墨烯条(长度2.4-7.5 μm, 0.52太赫兹间距)设计。不同化学势串联的LP标签设计为7位、14位和21位编码。双极化正交编码通过在单层和多层配置中提供独立的TE/TM响应,每个偏振支持7位和14位,从而使频谱容量翻倍。单层正交标签设计通过门控调谐使11-14位具有不同的TE/TM峰(77% - 100%吸收)。最后,对称多层设计(1.5 μm介电间距,µc = 0,0.8和0.9 eV)在2.72-4.14太赫兹频率范围内实现14/28位双极化容量(每极化7/14位),对于两到四层结构具有80% - 100%的吸收效率。
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引用次数: 0
Phase-sensitivity enhancement in Mach–Zehnder interferometer via local Gaussian operations 局部高斯运算增强Mach-Zehnder干涉仪的相敏性
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-09 DOI: 10.1007/s11082-026-08705-7
Taj Kumar, Krishna Mohan Mishra, Aviral Kumar Pandey, Vikas Kumar Prajapati, Devendra Kumar Mishra

We investigate the role of local Gaussian operations, specifically local displacement operations (LDOs) and local squeezing operations (LSOs), in enhancing the phase sensitivity of a Mach–Zehnder interferometer (MZI). We consider both single-arm and dual-arm implementations of these operations and analyze the resulting phase sensitivity and quantum Cramér–Rao bound (QCRB) using coherent and squeezed vacuum inputs under homodyne detection, for both ideal and lossy conditions. We show that, under appropriate assumptions on the displacement parameters, single-arm and dual-arm LDO schemes yield identical phase sensitivity, indicating that a single-arm implementation is sufficient for displacement-assisted enhancement. In contrast, for local squeezing operations, the dual-arm LSO scheme consistently outperforms its single-arm counterpart under corresponding assumptions on the squeezing parameters. We further demonstrate that both LDO and LSO schemes improve robustness against photon loss and lead to a reduced QCRB in both ideal and lossy scenarios. Our results highlight local Gaussian operations as experimentally feasible, low-cost tools for enhancing phase sensitivity and loss robustness in quantum optical interferometry, within the considered framework.

我们研究了局部高斯操作,特别是局部位移操作(LDOs)和局部压缩操作(LSOs)在提高马赫-曾德尔干涉仪(MZI)相位灵敏度中的作用。我们考虑了这些操作的单臂和双臂实现,并在纯差检测下使用相干和压缩真空输入分析了所得到的相灵敏度和量子cram - rao界(QCRB),包括理想条件和有损条件。我们表明,在适当的位移参数假设下,单臂和双臂LDO方案产生相同的相位灵敏度,这表明单臂实现足以实现位移辅助增强。相比之下,对于局部挤压作业,在相应的挤压参数假设下,双臂LSO方案始终优于单臂方案。我们进一步证明,LDO和LSO方案都提高了对光子损耗的鲁棒性,并在理想和有损情况下降低了QCRB。我们的研究结果强调,在考虑的框架内,局部高斯运算是实验上可行的,低成本的工具,用于增强量子光学干涉测量中的相位灵敏度和损耗鲁棒性。
{"title":"Phase-sensitivity enhancement in Mach–Zehnder interferometer via local Gaussian operations","authors":"Taj Kumar,&nbsp;Krishna Mohan Mishra,&nbsp;Aviral Kumar Pandey,&nbsp;Vikas Kumar Prajapati,&nbsp;Devendra Kumar Mishra","doi":"10.1007/s11082-026-08705-7","DOIUrl":"10.1007/s11082-026-08705-7","url":null,"abstract":"<div><p>We investigate the role of local Gaussian operations, specifically local displacement operations (LDOs) and local squeezing operations (LSOs), in enhancing the phase sensitivity of a Mach–Zehnder interferometer (MZI). We consider both single-arm and dual-arm implementations of these operations and analyze the resulting phase sensitivity and quantum Cramér–Rao bound (QCRB) using coherent and squeezed vacuum inputs under homodyne detection, for both ideal and lossy conditions. We show that, under appropriate assumptions on the displacement parameters, single-arm and dual-arm LDO schemes yield identical phase sensitivity, indicating that a single-arm implementation is sufficient for displacement-assisted enhancement. In contrast, for local squeezing operations, the dual-arm LSO scheme consistently outperforms its single-arm counterpart under corresponding assumptions on the squeezing parameters. We further demonstrate that both LDO and LSO schemes improve robustness against photon loss and lead to a reduced QCRB in both ideal and lossy scenarios. Our results highlight local Gaussian operations as experimentally feasible, low-cost tools for enhancing phase sensitivity and loss robustness in quantum optical interferometry, within the considered framework.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 3","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147337845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure–property correlation in sulfur-doped g-C3N4: enhanced charge dynamics and optoelectronic response for photodetection applications 硫掺杂g-C3N4的结构-性能相关性:增强电荷动力学和光探测应用的光电响应
IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-09 DOI: 10.1007/s11082-026-08709-3
Elham Kharatzadeh, Marzieh Khademalrasool

Graphitic carbon nitride (g-C3N4), a promising two-dimensional (2D) semiconductor, holds great potential for optoelectronic applications but suffers from poor electron–hole separation and limited carrier diffusion. To overcome these limitations, S-doped g-C3N4 samples with varying sulfur concentrations (2, 4, and 6 wt%) were synthesized to enhance light absorption and charge transport. Structural characterization using XRD, FTIR, and FESEM confirmed the successful incorporation of sulfur and improved material properties. Optical and electrical characterizations—including UV–Vis, photoluminescence, EIS spectroscopy, Mott–Schottky analysis, and photocurrent measurements—revealed that the gCN(4 S%) sample exhibited the highest photocurrent, attributed to enhanced light absorption, increased charge carrier density, and reduced trap site. The EIS analysis showed the smallest Nyquist semicircle for gCN(4 S%), indicating efficient electron–hole separation and improved conductivity. Furthermore, photodetector performance metrics—including photoresponsivity (206.88 mA/W), specific detectivity (6.2161 × 10¹⁰ Jones), photosensitivity (5060), and external quantum efficiency (950%)—were significantly enhanced in gCN(4 S%) compared to undoped and other doped samples. These findings suggest that optimal S-doping substantially improves the optoelectronic performance of g-C3N4, making gCN(4 S%) a strong candidate for high-performance photodetector applications.

石墨氮化碳(g-C3N4)是一种很有前途的二维(2D)半导体,具有很大的光电应用潜力,但存在电子空穴分离差和载流子扩散受限的问题。为了克服这些限制,合成了不同硫浓度(2、4和6 wt%)的s掺杂g-C3N4样品,以增强光吸收和电荷输运。利用XRD、FTIR和FESEM进行结构表征,证实了硫的成功掺入和材料性能的改善。光学和电学表征——包括UV-Vis、光致发光、EIS光谱、Mott-Schottky分析和光电流测量——显示gCN(4 S%)样品表现出最高的光电流,这归因于光吸收增强、电荷载流子密度增加和陷阱位点减少。EIS分析显示gCN的Nyquist半圆最小(4 S%),表明电子空穴分离效率高,电导率提高。此外,与未掺杂和其他掺杂样品相比,gCN中的光电探测器性能指标-包括光响应性(206.88 mA/W),特定探测性(6.2161 × 10¹⁰Jones),光敏性(5060)和外部量子效率(950%)显着增强(4 S%)。这些发现表明,最佳的S掺杂大大提高了g-C3N4的光电性能,使gCN(4s %)成为高性能光电探测器应用的有力候选者。
{"title":"Structure–property correlation in sulfur-doped g-C3N4: enhanced charge dynamics and optoelectronic response for photodetection applications","authors":"Elham Kharatzadeh,&nbsp;Marzieh Khademalrasool","doi":"10.1007/s11082-026-08709-3","DOIUrl":"10.1007/s11082-026-08709-3","url":null,"abstract":"<div><p>Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>), a promising two-dimensional (2D) semiconductor, holds great potential for optoelectronic applications but suffers from poor electron–hole separation and limited carrier diffusion. To overcome these limitations, S-doped g-C<sub>3</sub>N<sub>4</sub> samples with varying sulfur concentrations (2, 4, and 6 wt%) were synthesized to enhance light absorption and charge transport. Structural characterization using XRD, FTIR, and FESEM confirmed the successful incorporation of sulfur and improved material properties. Optical and electrical characterizations—including UV–Vis, photoluminescence, EIS spectroscopy, Mott–Schottky analysis, and photocurrent measurements—revealed that the gCN(4 S%) sample exhibited the highest photocurrent, attributed to enhanced light absorption, increased charge carrier density, and reduced trap site. The EIS analysis showed the smallest Nyquist semicircle for gCN(4 S%), indicating efficient electron–hole separation and improved conductivity. Furthermore, photodetector performance metrics—including photoresponsivity (206.88 mA/W), specific detectivity (6.2161 × 10¹⁰ Jones), photosensitivity (5060), and external quantum efficiency (950%)—were significantly enhanced in gCN(4 S%) compared to undoped and other doped samples. These findings suggest that optimal S-doping substantially improves the optoelectronic performance of g-C<sub>3</sub>N<sub>4</sub>, making gCN(4 S%) a strong candidate for high-performance photodetector applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 3","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147337860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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Optical and Quantum Electronics
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