The tunable band structure and the ability to convert ultraviolet light (UV) photons into measurable electrical signals without an external power supply make the nano-scale spinel structure of nickel cobaltite (NiCo2O4; SNC) an attractive ternary metal oxide semiconductor for use as a UV light photodetector (UPD). In this paper, the SNC was prepared using a simple, one-step hydrothermal method and characterized by various analytical techniques. I-V characteristics were comprehensively studied over a range of -5 to + 5 V to evaluate the dependence of the net current in an SNC-based UPD (UNC) on the variations in temperature, bias voltage, and power density (PD) of 365 nm-UV light. It was found that the device exhibits diode-like characteristics with acceptable photoresponse behaviors. This device not only demonstrated a modified Richardson constant of 22.85 A.cm− 2.K− 2 but also exhibited a high contrast ratio and significant short-circuit current at 0 V, indicating its self-powered nature. The UNC exposed photoresponsivity of 0.88 A/W, detectivity of 10.75 × 1010 Jones, external quantum efficiency of 299.4%, and normalized Gain dynamic range of 419.9 W− 1 at the PD of 2.2 mW/cm2. Moreover, it revealed a rise time of 3.6 s, and a high maximum photocurrent of 21.2 µA at PD of 79.6 mW/cm2. In conclusion, the present study demonstrates a substantial advancement in the design of a low-cost, self-powered, reliable, and long-term stable optoelectronic device with the ability to detect wide range of PDs for 365 nm-UV light.