Molybdenum oxide ((MoO_x)), a wide band-gap material with low optical absorption, has emerged as a promising candidate for the hole-selective front contacts for silicon solar cells. However, the carrier selectivity is limited by the absence of a sufficiently high electron barrier. In this study, numerical simulations demonstrate that incorporating an ultra-thin aluminum oxide tunnel layer ((le) 2 nm) enhances the hole selectivity in (MoO_x)-based front contacts. Introducing the tunnel layer at the (MoO_x)/c-Si (n) interface resulted in a relative increase of 5.36 % over the control cell efficiency of 17.77 %. A systematic variation of the energy-band alignment of the tunnel layer revealed that the observed performance enhancement is primarily due to the additional conduction band energy barrier formed by the tunnel layer. A strong influence of the tunnel layer thickness, interface defect density, and pinholes through the tunnel layer on the open-circuit voltage was observed. Subsequently, the tunnel layer was also found to reduce the temperature sensitivity of the solar cell performance. The tunnel layer reduced the magnitudeof the simulated (P_{max}) temperature coefficient of the structure from −0.39 %/°C to −0.15 %/°C, signifying its role in developing high-efficiency silicon solar cells.
氧化钼((MoO_x))是一种具有低光吸收的宽带隙材料,已成为硅太阳能电池孔选择前触点的有希望的候选材料。然而,载流子选择性受到缺乏足够高的电子势垒的限制。在本研究中,数值模拟表明,加入超薄氧化铝隧道层((le) 2 nm)可以提高(MoO_x)基前触点的空穴选择性。在(MoO_x) /c-Si (n)界面处引入隧道层,相对增大5.36 % over the control cell efficiency of 17.77 %. A systematic variation of the energy-band alignment of the tunnel layer revealed that the observed performance enhancement is primarily due to the additional conduction band energy barrier formed by the tunnel layer. A strong influence of the tunnel layer thickness, interface defect density, and pinholes through the tunnel layer on the open-circuit voltage was observed. Subsequently, the tunnel layer was also found to reduce the temperature sensitivity of the solar cell performance. The tunnel layer reduced the magnitudeof the simulated (P_{max}) temperature coefficient of the structure from −0.39 %/°C to −0.15 %/°C, signifying its role in developing high-efficiency silicon solar cells.
{"title":"(Al_2O_3) tunnel layer to mitigate selectivity loss in (MoO_x)-based silicon solar cells: insights from numerical simulations","authors":"Anil, Paras, Abhishek Kumar, Meenakshi Devi, Meenakshi, Rinki, Shivanshu, Sanjay Kumar Srivastava, Prathap Pathi","doi":"10.1007/s11082-025-08539-9","DOIUrl":"10.1007/s11082-025-08539-9","url":null,"abstract":"<div><p>Molybdenum oxide (<span>(MoO_x)</span>), a wide band-gap material with low optical absorption, has emerged as a promising candidate for the hole-selective front contacts for silicon solar cells. However, the carrier selectivity is limited by the absence of a sufficiently high electron barrier. In this study, numerical simulations demonstrate that incorporating an ultra-thin aluminum oxide tunnel layer (<span>(le)</span> 2 nm) enhances the hole selectivity in <span>(MoO_x)</span>-based front contacts. Introducing the tunnel layer at the <span>(MoO_x)</span>/c-Si (n) interface resulted in a relative increase of 5.36 % over the control cell efficiency of 17.77 %. A systematic variation of the energy-band alignment of the tunnel layer revealed that the observed performance enhancement is primarily due to the additional conduction band energy barrier formed by the tunnel layer. A strong influence of the tunnel layer thickness, interface defect density, and pinholes through the tunnel layer on the open-circuit voltage was observed. Subsequently, the tunnel layer was also found to reduce the temperature sensitivity of the solar cell performance. The tunnel layer reduced the magnitudeof the simulated <span>(P_{max})</span> temperature coefficient of the structure from −0.39 %/°C to −0.15 %/°C, signifying its role in developing high-efficiency silicon solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-11DOI: 10.1007/s11082-025-08546-w
Yiwen Ma, Wei Qiu, Pin Lv, Feifei Yin, Tianya Tan
In this paper, a theory for rapid light generation based on a cascaded structure of coherent population oscillations (CPO) at room temperature is proposed. Through theoretical calculations, we first compare the effects of the hybrid pump (1480 nm and 980 nm) cascade structure with the dual-pump (1480 nm and 980 nm) single fiber structure on the fast light. Then the phenomenon of fast light saturation in the cascade structure is studied in detail. Finally, the effect of pump ratio M on time advancement is demonstrated. This may facilitate the optimization of optical communication systems.
{"title":"Hybrid pump cascade structure on rapid propagation of light","authors":"Yiwen Ma, Wei Qiu, Pin Lv, Feifei Yin, Tianya Tan","doi":"10.1007/s11082-025-08546-w","DOIUrl":"10.1007/s11082-025-08546-w","url":null,"abstract":"<div><p>In this paper, a theory for rapid light generation based on a cascaded structure of coherent population oscillations (CPO) at room temperature is proposed. Through theoretical calculations, we first compare the effects of the hybrid pump (1480 nm and 980 nm) cascade structure with the dual-pump (1480 nm and 980 nm) single fiber structure on the fast light. Then the phenomenon of fast light saturation in the cascade structure is studied in detail. Finally, the effect of pump ratio M on time advancement is demonstrated. This may facilitate the optimization of optical communication systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08550-0
P. Arul, K. Arulvendhan, R. Satheesh, S. Banumathi
p-Si/n-ZnO heterojunction diodes have garnered significant attention for energy conversion applications due to their superior optoelectronic properties. In this study, we synthesized n-Zn(1-x)InxO two-dimensional (2D) nanoflakes using a phytochemical-assisted synthesis technique, enabling precise control over nanoflake size via In3+ dopant concentration. This eco-friendly approach offers a sustainable and scalable method for fabricating high-performance nanostructures. Structural analysis confirmed the hexagonal wurtzite crystal structure of Zn(1−x)InxO, while transmission electron microscopy revealed 2D flake-like morphologies ranging from 100 nm to 250 nm. Optical characterization demonstrated bandgap tunability, with pristine ZnO exhibiting a bandgap of 3.38 eV and In3+-doped ZnO (1%, 3%, and 5%) showing bandgaps of 3.42 eV, 3.46 eV, and 3.48 eV, respectively, due to the Burstein-Moss effect. The p-Si/n-Zn(1−x)InxO heterojunction diodes exhibited enhanced rectification, electrical conductivity, and optoelectronic performance. Under forward bias, the dark current and photocurrent values of the p-Si/ZnO and p-Si/Zn0.95In0.05O diodes were 6.4 × 10⁻⁴ A & 8.8 × 10⁻⁴ A and 4.3 × 10⁻³ A & 6.3 × 10⁻³ A, respectively, indicating a significant enhancement due to In3+ doping. These findings demonstrate a novel pathway for engineering high-performance heterojunction diodes through sustainable synthesis and precise dopant engineering, paving the way for next-generation optoelectronic and energy conversion devices.
{"title":"Green production of n-type Zn1−xInxO 2D nanoflakes and the photo-electrical characteristics of p-Si/n-Zn1−xInxO heterojunction diodes","authors":"P. Arul, K. Arulvendhan, R. Satheesh, S. Banumathi","doi":"10.1007/s11082-025-08550-0","DOIUrl":"10.1007/s11082-025-08550-0","url":null,"abstract":"<div><p>p-Si/n-ZnO heterojunction diodes have garnered significant attention for energy conversion applications due to their superior optoelectronic properties. In this study, we synthesized n-Zn(1-<sub>x</sub>)In<sub>x</sub>O two-dimensional (2D) nanoflakes using a phytochemical-assisted synthesis technique, enabling precise control over nanoflake size via In<sup>3+</sup> dopant concentration. This eco-friendly approach offers a sustainable and scalable method for fabricating high-performance nanostructures. Structural analysis confirmed the hexagonal wurtzite crystal structure of Zn<sub>(1−x)</sub>In<sub>x</sub>O, while transmission electron microscopy revealed 2D flake-like morphologies ranging from 100 nm to 250 nm. Optical characterization demonstrated bandgap tunability, with pristine ZnO exhibiting a bandgap of 3.38 eV and In<sup>3+</sup>-doped ZnO (1%, 3%, and 5%) showing bandgaps of 3.42 eV, 3.46 eV, and 3.48 eV, respectively, due to the Burstein-Moss effect. The p-Si/n-Zn<sub>(1−x)</sub>In<sub>x</sub>O heterojunction diodes exhibited enhanced rectification, electrical conductivity, and optoelectronic performance. Under forward bias, the dark current and photocurrent values of the p-Si/ZnO and p-Si/Zn<sub>0.95</sub>In<sub>0.05</sub>O diodes were 6.4 × 10⁻⁴ A & 8.8 × 10⁻⁴ A and 4.3 × 10⁻³ A & 6.3 × 10⁻³ A, respectively, indicating a significant enhancement due to In<sup>3+</sup> doping. These findings demonstrate a novel pathway for engineering high-performance heterojunction diodes through sustainable synthesis and precise dopant engineering, paving the way for next-generation optoelectronic and energy conversion devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08544-y
Yuan-Fong Chou Chau, Sy-Hann Chen, Hung Ji Huang, Roshan Thotagamuge, Muhammad Raziq Rahimi Kooh
We propose a dual-directional plasmonic metamaterial absorber (MMA) with a simple multilayered architecture that simultaneously achieves ultra-narrowband and ultra-broadband absorption. The structure comprises a SiO2/Ag/SiO2/Ti/SiO2 stack with integrated monolayer graphene sheets, featuring a dual bowtie aperture pattern for strong field confinement. Under top illumination, it exhibits nine near-perfect narrowband peaks (avg. ~98% absorptance, 400–1200 nm), while bottom illumination induces broadband absorption (> 90%). The resonant wavelengths are dynamically tunable via electrostatic gating, enabling active control. Full-wave simulations reveal Fabry-Pérot-like cavity resonances enhanced by plasmonic hotspots, yielding exceptional sensing performance (sensitivity: 1306 nm/RIU, FOM: 261.21/RIU, Q-factor: 215.4). Fabrication-compatible with CVD graphene and FIB patterning, our design outperforms existing MMAs in efficiency, bidirectional functionality, and ease of fabrication. This platform uniquely enables switching between hyperspectral sensing and solar thermal harvesting in a single device, with applications in refractive index sensing, optical switching, and energy harvesting.
{"title":"Multi-mode and bidirectional plasmonic metamaterial absorber based on bilayer graphene and bowtie-shaped windows","authors":"Yuan-Fong Chou Chau, Sy-Hann Chen, Hung Ji Huang, Roshan Thotagamuge, Muhammad Raziq Rahimi Kooh","doi":"10.1007/s11082-025-08544-y","DOIUrl":"10.1007/s11082-025-08544-y","url":null,"abstract":"<div><p>We propose a dual-directional plasmonic metamaterial absorber (MMA) with a simple multilayered architecture that simultaneously achieves ultra-narrowband and ultra-broadband absorption. The structure comprises a SiO<sub>2</sub>/Ag/SiO<sub>2</sub>/Ti/SiO<sub>2</sub> stack with integrated monolayer graphene sheets, featuring a dual bowtie aperture pattern for strong field confinement. Under top illumination, it exhibits nine near-perfect narrowband peaks (avg. ~98% absorptance, 400–1200 nm), while bottom illumination induces broadband absorption (> 90%). The resonant wavelengths are dynamically tunable via electrostatic gating, enabling active control. Full-wave simulations reveal Fabry-Pérot-like cavity resonances enhanced by plasmonic hotspots, yielding exceptional sensing performance (sensitivity: 1306 nm/RIU, FOM: 261.21/RIU, Q-factor: 215.4). Fabrication-compatible with CVD graphene and FIB patterning, our design outperforms existing MMAs in efficiency, bidirectional functionality, and ease of fabrication. This platform uniquely enables switching between hyperspectral sensing and solar thermal harvesting in a single device, with applications in refractive index sensing, optical switching, and energy harvesting.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Early detection and screening of colorectal cancer are challenging due to the low sensitivity of conventional diagnostic methods in detecting trace levels of carcinoembryonic antigen (CEA), as the main clinically validated biomarker for colorectal cancer. In this study, we developed an advanced plasmonic biosensor that utilizes a regularly patterned arrangement of asymmetric crescent-shaped gold nanoparticles constructed on a quartz foundation. Its sensing mechanism is based on the localized surface plasmon resonance (LSPR), allowing for direct, marker-free detection of CEA in real-time measurements. Using detailed Finite-Difference Time-Domain (FDTD) computational analysis, we established strong localized electromagnetic field enhancement around the crescent nanostructures, producing a clear extinction peak near 900 nm. Parameter optimization studies revealed that maximum sensitivity and figure of merit (FoM) are obtained with a crescent configuration angle of roughly 100° and particle separation of 40 nm. The biosensor shows predictable linear wavelength shifts when exposed to refractive index variations in the detection medium, confirming its ability to identify minute CEA concentrations. These results demonstrate the considerable potential of this plasmonic technology as a high-performance, marker-free sensing solution for early cancer detection. This optimized nanostructure design, combined with advanced plasmonic properties, provides a powerful tool that overcomes existing limitations in current cancer screening approaches, potentially enabling more precise and earlier identification of colorectal cancers through enhanced biomarker detection capabilities.
{"title":"Sensitive plasmonic biosensor for CEA detection using asymmetric crescent nanostructures","authors":"Hamid Bahador, Keysan Abolhasanian, Zahra Abdoli, Azadeh Nilghaz","doi":"10.1007/s11082-025-08540-2","DOIUrl":"10.1007/s11082-025-08540-2","url":null,"abstract":"<div><p>Early detection and screening of colorectal cancer are challenging due to the low sensitivity of conventional diagnostic methods in detecting trace levels of carcinoembryonic antigen (CEA), as the main clinically validated biomarker for colorectal cancer. In this study, we developed an advanced plasmonic biosensor that utilizes a regularly patterned arrangement of asymmetric crescent-shaped gold nanoparticles constructed on a quartz foundation. Its sensing mechanism is based on the localized surface plasmon resonance (LSPR), allowing for direct, marker-free detection of CEA in real-time measurements. Using detailed Finite-Difference Time-Domain (FDTD) computational analysis, we established strong localized electromagnetic field enhancement around the crescent nanostructures, producing a clear extinction peak near 900 nm. Parameter optimization studies revealed that maximum sensitivity and figure of merit (FoM) are obtained with a crescent configuration angle of roughly 100° and particle separation of 40 nm. The biosensor shows predictable linear wavelength shifts when exposed to refractive index variations in the detection medium, confirming its ability to identify minute CEA concentrations. These results demonstrate the considerable potential of this plasmonic technology as a high-performance, marker-free sensing solution for early cancer detection. This optimized nanostructure design, combined with advanced plasmonic properties, provides a powerful tool that overcomes existing limitations in current cancer screening approaches, potentially enabling more precise and earlier identification of colorectal cancers through enhanced biomarker detection capabilities.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, the SCAPS-1D modeling program was used to study the impact of an inorganic buffer layer (BL) of ZnOS on the performance of perovskite solar cells (PSCs). The proposed solar cell structure consisted of a glass/TCO/TiO2/ZnOS/CsPbI3/CuSbS2/Au configuration. Incorporating ZnOS-BL between the electron transport layer (ETL) and absorber layer (AL) improved the charge transportation, enhancing the overall performance. The effects of material characteristics, such as the thickness of AL as well as the electron affinity of ETL, BL, and hole transport layer (HTL), were studied. Moreover, the doping densities of ETL, BL and HTL were also examined and optimized to achieve the highest device performance. Consequently, the device performance parameters improved significantly, such as the device incorporating BL achieved JSC of 22.98 mA/cm2, VOC of 1.13 V, FF of 86.25% and power conversion efficiency (PCE) of 22.04% compared to the reference device without BL with JSC of 18.46 mA/cm2, VOC of 0.79 V, FF of 78.81%, and PCE of 11.14%. The proposed modeling process opens a new path for researchers to develop this BL-based PSC experimentally.
{"title":"A computational investigation of ZnOS buffer layer integration for improved performance of perovskite solar cell","authors":"Aqsa Islam, Syed Zulqarnain Haider, Mingqing Wang, Hafeez Anwar","doi":"10.1007/s11082-025-08559-5","DOIUrl":"10.1007/s11082-025-08559-5","url":null,"abstract":"<div><p>In this work, the SCAPS-1D modeling program was used to study the impact of an inorganic buffer layer (BL) of ZnOS on the performance of perovskite solar cells (PSCs). The proposed solar cell structure consisted of a glass/TCO/TiO<sub>2</sub>/ZnOS/CsPbI<sub>3</sub>/CuSbS<sub>2</sub>/Au configuration. Incorporating ZnOS-BL between the electron transport layer (ETL) and absorber layer (AL) improved the charge transportation, enhancing the overall performance. The effects of material characteristics, such as the thickness of AL as well as the electron affinity of ETL, BL, and hole transport layer (HTL), were studied. Moreover, the doping densities of ETL, BL and HTL were also examined and optimized to achieve the highest device performance. Consequently, the device performance parameters improved significantly, such as the device incorporating BL achieved J<sub>SC</sub> of 22.98 mA/cm<sup>2</sup>, V<sub>OC</sub> of 1.13 V, FF of 86.25% and power conversion efficiency (PCE) of 22.04% compared to the reference device without BL with J<sub>SC</sub> of 18.46 mA/cm<sup>2</sup>, V<sub>OC</sub> of 0.79 V, FF of 78.81%, and PCE of 11.14%. The proposed modeling process opens a new path for researchers to develop this BL-based PSC experimentally.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08558-6
Khalid Bouguenina, Abdelhalim Zoukel, Abdelkader Nebatti Ech-Chergui, Kada Benhanifia, Bahri Deghfel, Loumafak Hafaifa, Noureddine Benaya, Fatima Bouasria, Mehdi Adjdir
This study presents a semi-analytical and numerical approach to enhancing the performance of organic solar cells (OSCs) based on the PM6:Y6 system. To model the optical properties of the plasmonic active layer, we utilized the Maxwell-Garnett Effective Medium Theory to determine the complex refractive index of a composite containing 10 vol% silver nanoparticles (Ag-NPs). These derived optical constants were then integrated into a Transfer Matrix Method (TMM) to simulate light absorption and optoelectronic performance. Our results demonstrate that Ag-NPs significantly boost light absorption via localized surface plasmon resonance (LSPR) and enhanced scattering, leading to a substantial increase in simulated device efficiency. The plasmonic device achieved a power conversion efficiency (PCE) of 13.92%, a notable improvement over the pristine device’s 10.19%. Furthermore, a detailed analysis of active layer thickness across a range of 100 to 280 nm revealed that optimal performance is architecture-dependent. Inverted OSCs (IOSCs) reached their peak PCE of 14.29% at a thickness of 220 nm, while conventional OSCs (COSCs) performed best at 240 nm with a PCE of 11.49%. This finding highlights the superior charge extraction and collection efficiency of the inverted configuration. Overall, this research establishes that combining a semi-analytical plasmonic model with precise thickness optimization is a powerful and efficient strategy for designing high-efficiency OSCs.
{"title":"Computational investigation of silver nanoparticle-enhanced organic solar cells: optical and electronic insights","authors":"Khalid Bouguenina, Abdelhalim Zoukel, Abdelkader Nebatti Ech-Chergui, Kada Benhanifia, Bahri Deghfel, Loumafak Hafaifa, Noureddine Benaya, Fatima Bouasria, Mehdi Adjdir","doi":"10.1007/s11082-025-08558-6","DOIUrl":"10.1007/s11082-025-08558-6","url":null,"abstract":"<div><p>This study presents a semi-analytical and numerical approach to enhancing the performance of organic solar cells (OSCs) based on the PM6:Y6 system. To model the optical properties of the plasmonic active layer, we utilized the Maxwell-Garnett Effective Medium Theory to determine the complex refractive index of a composite containing 10 vol% silver nanoparticles (Ag-NPs). These derived optical constants were then integrated into a Transfer Matrix Method (TMM) to simulate light absorption and optoelectronic performance. Our results demonstrate that Ag-NPs significantly boost light absorption via localized surface plasmon resonance (LSPR) and enhanced scattering, leading to a substantial increase in simulated device efficiency. The plasmonic device achieved a power conversion efficiency (PCE) of 13.92%, a notable improvement over the pristine device’s 10.19%. Furthermore, a detailed analysis of active layer thickness across a range of 100 to 280 nm revealed that optimal performance is architecture-dependent. Inverted OSCs (IOSCs) reached their peak PCE of 14.29% at a thickness of 220 nm, while conventional OSCs (COSCs) performed best at 240 nm with a PCE of 11.49%. This finding highlights the superior charge extraction and collection efficiency of the inverted configuration. Overall, this research establishes that combining a semi-analytical plasmonic model with precise thickness optimization is a powerful and efficient strategy for designing high-efficiency OSCs.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08535-z
Venkateswarlu .G, C. V. M. Chaturvedi, Umakanta Nanda, J. Bhaskara Rao, E. Sampad, Nalini Bodasingi
Single-junction perovskite solar cells, part of the emerging third-generation photovoltaic technologies, face intrinsic limitations such as poor charge separation, instability, and elevated recombination losses. To overcome these challenges and address the environmental concerns associated with lead-based perovskites, a novel, lead-free next-generation, tin-based dual absorber perovskite solar cell (TDAPSC) featuring the device architecture Au/FTO/(textrm{SnS}_{2})/(textrm{BaSnS}_{3})/(textrm{Rb}_{2}textrm{SnI}_{6})/PEDOT/Ni is proposed here. Through the integration of two complementary tin-based absorbers, (textrm{Rb}_{2}textrm{SnI}_{6}) (a halide perovskite variant) and (textrm{BaSnS}_{3}) (a sulfide perovskite) this architecture eliminates lead-related toxicity while leveraging broad spectral absorption, superior carrier mobility, and high quantum efficiency. Detailed SCAPS-1D simulations to optimize key performance parameters including recombination pathways, absorber thicknesses, defect densities, charge carrier distributions, and energy level alignment across interfaces are conducted. As a result, the optimized TDAPSC achieved an open-circuit voltage ((V_{textrm{oc}})) of 1.20 V, a short-circuit current density ((J_{textrm{sc}})) of 35.83 mA/cm2, and a fill factor (FF) of 89.33%, leading to a remarkable power conversion efficiency (PCE) of 38.44%. This enhanced performance stems from suppressed recombination and efficient charge extraction facilitated by energy-level alignment between (textrm{BaSnS}_{3}) and (textrm{Rb}_{2}textrm{SnI}_{6}). Moreover, the fully inorganic composition ensures excellent chemical and thermal stability, while also offering scalable fabrication potential. Altogether, this TDAPSC design presents a highly promising pathway toward next-generation photovoltaic technologies that prioritize environmental safety, performance, and long-term durability.
作为新兴的第三代光伏技术的一部分,单结钙钛矿太阳能电池面临着诸如电荷分离不良、不稳定和复合损失增加等内在局限性。为了克服这些挑战并解决与铅基钙钛矿相关的环境问题,本文提出了一种新型的无铅下一代锡基双吸收剂钙钛矿太阳能电池(TDAPSC),其器件结构为Au/FTO/ (textrm{SnS}_{2}) / (textrm{BaSnS}_{3}) / (textrm{Rb}_{2}textrm{SnI}_{6}) /PEDOT/Ni。通过集成两种互补的锡基吸收剂(textrm{Rb}_{2}textrm{SnI}_{6})(卤化物钙钛矿变体)和(textrm{BaSnS}_{3})(硫化物钙钛矿),这种结构消除了铅相关的毒性,同时利用广谱吸收、优越的载流子迁移率和高量子效率。详细的SCAPS-1D模拟优化了关键性能参数,包括重组途径、吸收剂厚度、缺陷密度、载流子分布和界面上的能级排列。结果表明,优化后的TDAPSC开路电压((V_{textrm{oc}}))为1.20 V,短路电流密度((J_{textrm{sc}}))为35.83 mA/cm2,填充系数(FF)为89.33%, leading to a remarkable power conversion efficiency (PCE) of 38.44%. This enhanced performance stems from suppressed recombination and efficient charge extraction facilitated by energy-level alignment between (textrm{BaSnS}_{3}) and (textrm{Rb}_{2}textrm{SnI}_{6}). Moreover, the fully inorganic composition ensures excellent chemical and thermal stability, while also offering scalable fabrication potential. Altogether, this TDAPSC design presents a highly promising pathway toward next-generation photovoltaic technologies that prioritize environmental safety, performance, and long-term durability.
{"title":"Modeling and optimization of advanced-performance tin-based dual absorber perovskite solar cell (Rb2SnI6/BaSnS3) using SCAPS-1D","authors":"Venkateswarlu .G, C. V. M. Chaturvedi, Umakanta Nanda, J. Bhaskara Rao, E. Sampad, Nalini Bodasingi","doi":"10.1007/s11082-025-08535-z","DOIUrl":"10.1007/s11082-025-08535-z","url":null,"abstract":"<div><p>Single-junction perovskite solar cells, part of the emerging third-generation photovoltaic technologies, face intrinsic limitations such as poor charge separation, instability, and elevated recombination losses. To overcome these challenges and address the environmental concerns associated with lead-based perovskites, a novel, lead-free next-generation, tin-based dual absorber perovskite solar cell (TDAPSC) featuring the device architecture Au/FTO/<span>(textrm{SnS}_{2})</span>/<span>(textrm{BaSnS}_{3})</span>/<span>(textrm{Rb}_{2}textrm{SnI}_{6})</span>/PEDOT/Ni is proposed here. Through the integration of two complementary tin-based absorbers, <span>(textrm{Rb}_{2}textrm{SnI}_{6})</span> (a halide perovskite variant) and <span>(textrm{BaSnS}_{3})</span> (a sulfide perovskite) this architecture eliminates lead-related toxicity while leveraging broad spectral absorption, superior carrier mobility, and high quantum efficiency. Detailed SCAPS-1D simulations to optimize key performance parameters including recombination pathways, absorber thicknesses, defect densities, charge carrier distributions, and energy level alignment across interfaces are conducted. As a result, the optimized TDAPSC achieved an open-circuit voltage (<span>(V_{textrm{oc}})</span>) of 1.20 V, a short-circuit current density (<span>(J_{textrm{sc}})</span>) of 35.83 mA/cm<sup>2</sup>, and a fill factor (FF) of 89.33%, leading to a remarkable power conversion efficiency (PCE) of 38.44%. This enhanced performance stems from suppressed recombination and efficient charge extraction facilitated by energy-level alignment between <span>(textrm{BaSnS}_{3})</span> and <span>(textrm{Rb}_{2}textrm{SnI}_{6})</span>. Moreover, the fully inorganic composition ensures excellent chemical and thermal stability, while also offering scalable fabrication potential. Altogether, this TDAPSC design presents a highly promising pathway toward next-generation photovoltaic technologies that prioritize environmental safety, performance, and long-term durability.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08557-7
Shabir Ali, Xinhua Wang, Amjad A. Almunyif, Muhammad Ibrar, Sawaira, Maqbool Ur Rehman
Double perovskites (DPs) have garnered significant interest due to their promising applications in thermoelectric and optoelectronic technologies. In this study, we employ density functional theory (DFT) calculations to explore the structural, thermodynamic, mechanical and optoelectronic properties of the Na2CsAgBr6 DP compound under high-pressure conditions. Structural stability was assessed using the Perdew-Burke-Ernzerhof (PBE-GGA) potential, while optoelectronic properties were evaluated via the modified Becke-Johnson (mBJ) potential. The results reveals that the band gap decreases from 2.78 to1.65 eV as the pressure increases from 0 to 30 GPa, respectively. The electronic density of states analyze indicates covalent bonding with reduced interatomic distances under compression. Mechanical stability was confirmed through the calculation of elastic constants, demonstrating that the compound retains its robustness across varying pressures. Optical analyze highlights absorption in the infrared region, reinforcing its potential for photonic applications. Furthermore, thermal stability was investigated using the Gibbs2 code within the WIEN2K package and VASP code, confirming the material resilience under extreme conditions. These findings provide crucial insights into the tunable nature of Na2CsAgBr6, offering a pathway for optimizing its properties for next-generation electronic and optical devices.
{"title":"High-pressure insights into Na2CsAgBr6 double perovskite: a DFT study on structural, mechanical, and optoelectronic properties","authors":"Shabir Ali, Xinhua Wang, Amjad A. Almunyif, Muhammad Ibrar, Sawaira, Maqbool Ur Rehman","doi":"10.1007/s11082-025-08557-7","DOIUrl":"10.1007/s11082-025-08557-7","url":null,"abstract":"<p>Double perovskites (DPs) have garnered significant interest due to their promising applications in thermoelectric and optoelectronic technologies. In this study, we employ density functional theory (DFT) calculations to explore the structural, thermodynamic, mechanical and optoelectronic properties of the Na<sub>2</sub>CsAgBr<sub>6</sub> DP compound under high-pressure conditions. Structural stability was assessed using the Perdew-Burke-Ernzerhof (PBE-GGA) potential, while optoelectronic properties were evaluated via the modified Becke-Johnson (mBJ) potential. The results reveals that the band gap decreases from 2.78 to1.65 eV as the pressure increases from 0 to 30 GPa, respectively. The electronic density of states analyze indicates covalent bonding with reduced interatomic distances under compression. Mechanical stability was confirmed through the calculation of elastic constants, demonstrating that the compound retains its robustness across varying pressures. Optical analyze highlights absorption in the infrared region, reinforcing its potential for photonic applications. Furthermore, thermal stability was investigated using the Gibbs2 code within the WIEN2K package and VASP code, confirming the material resilience under extreme conditions. These findings provide crucial insights into the tunable nature of Na<sub>2</sub>CsAgBr<sub>6</sub>, offering a pathway for optimizing its properties for next-generation electronic and optical devices.</p>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-10DOI: 10.1007/s11082-025-08556-8
Rana M. Armaghan Ayaz, Adil Mustafa, Riccardo Funari
Human activities are increasingly contaminating surface and groundwater reserves. Among various pollutants, ethylene glycol (EG) contamination in water is particularly dangerous. At low concentrations it can enter the body undetected and causes serious health problems such as kidney failure and gastrointestinal disorders. This study demonstrates the use of symmetrically etched single-mode plastic optical fiber (POF) sensor model operating at 1550 nm for detecting EG presence in water using COMSOL Multiphysics. The working of the sensor is based on evanescent field interactions with surrounding medium to detect refractive index (RI) changes, while transmission variations through etched POF serving as the sensing metric. Simulations were conducted for aqueous EG solutions ranging from 0 to 0.15 weight fraction, corresponding to RI values ranging between 1.316 and 1.330. The sensor design was optimized by examining the impact of etched cladding diameter and etched length on sensitivity. These parameters were varied from 60 to 7.05 and 1 to 30 μm, respectively. This in turn lead to sensitivity values in the range of 0.39 × 10−3 to 99.50 × 10−3 Trans. (A.U)/RIU. Highlighting the importance of evanescent field-surrounding interaction for etched POF sensors, these findings revealed that sensitivity has direct relation with the length of etched region and inverse relation with cladding diameter. The maximum sensitivity of 99.50 × 10−3 Trans. (A.U)/RIU was achieved with a 30 μm etched length and 7.05 μm cladding diameter. The proposed POF-based sensor demonstrates strong potential for applications in biomedical engineering, biochemical monitoring, and beverage industry offering a compact and sensitive solution for EG contamination detection in water.
{"title":"Symmetrically etched plastic optical fiber sensor for the detection of ethylene glycol contamination in water","authors":"Rana M. Armaghan Ayaz, Adil Mustafa, Riccardo Funari","doi":"10.1007/s11082-025-08556-8","DOIUrl":"10.1007/s11082-025-08556-8","url":null,"abstract":"<div><p>Human activities are increasingly contaminating surface and groundwater reserves. Among various pollutants, ethylene glycol (EG) contamination in water is particularly dangerous. At low concentrations it can enter the body undetected and causes serious health problems such as kidney failure and gastrointestinal disorders. This study demonstrates the use of symmetrically etched single-mode plastic optical fiber (POF) sensor model operating at 1550 nm for detecting EG presence in water using COMSOL Multiphysics. The working of the sensor is based on evanescent field interactions with surrounding medium to detect refractive index (RI) changes, while transmission variations through etched POF serving as the sensing metric. Simulations were conducted for aqueous EG solutions ranging from 0 to 0.15 weight fraction, corresponding to RI values ranging between 1.316 and 1.330. The sensor design was optimized by examining the impact of etched cladding diameter and etched length on sensitivity. These parameters were varied from 60 to 7.05 and 1 to 30 μm, respectively. This in turn lead to sensitivity values in the range of 0.39 × 10<sup>−3</sup> to 99.50 × 10<sup>−3</sup> Trans. (A.U)/RIU. Highlighting the importance of evanescent field-surrounding interaction for etched POF sensors, these findings revealed that sensitivity has direct relation with the length of etched region and inverse relation with cladding diameter. The maximum sensitivity of 99.50 × 10<sup>−3</sup> Trans. (A.U)/RIU was achieved with a 30 μm etched length and 7.05 μm cladding diameter. The proposed POF-based sensor demonstrates strong potential for applications in biomedical engineering, biochemical monitoring, and beverage industry offering a compact and sensitive solution for EG contamination detection in water.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 12","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08556-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145479714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}