In this experimental work, Zn thin films were oxidized via annealing to produce transparent ZnO nanostructured films. The initial Zn thin films were deposited by DC magnetron sputtering and the annealing process was done at a temperature of 700 °C for different time intervals, i.e., 1, 2, 3, 4, and 5 h. Afterward, the effect of annealing time on structural, morphological, optical, and electrical properties was precisely investigated. X-ray diffraction studies verify a hexagonal wurtzite crystal structure for all ZnO thin films. The average crystal size of spherical ZnO nanoparticles which is obtained using Scherrer and Williamson-Hall methods is in good agreement with SEM images. Annealing for different time intervals influences surface roughness and average grain size of deposited films, which have been observed through AFM images. Optical characteristics of samples are obtained via absorption and transmission of UV spectra besides photoluminescence spectrum, confirming that direct optical energy bandgap -ranging from 3.19 to 3.26 eV for the samples- is directly influenced by annealing time. Thereafter, other optical parameters such as penetration depth, extinction coefficient, refractive index, dielectric constant, and optical conductivity have been calculated and discussed. Furthermore, a four-needle probe is adopted to measure ZnO thin films’ electrical resistance, which results in the calculation of resistivity and electrical conductivity. All results were well confirmed and validated by XPS testing. Hopefully, these results will facilitate the progress of high-efficiency optoelectrical devices produced by pure ZnO thin films.