Pub Date : 2025-02-06DOI: 10.1007/s11082-025-08047-w
M. Lazrek, M. Yaalou, Z. Hricha, A. Belafhal
The analytical propagation functions for partially coherent vortex cosine-hyperbolic-Gaussian beams (PCvChGB) propagating through uniaxial crystal orthogonal to the optical axis are derived, and numerical examples analyze their spreading properties. It's shown that the intensity distribution of the PCvChGB is astigmatic and related to the initial beam parameters, namely the decentered parameter b and topological charge M, the coherence length (sigma_{0}), and the ratio of refractive index ({{n_{e} } mathord{left/ {vphantom {{n_{e} } {n_{0} }}} right. kern-0pt} {n_{0} }}). The obtained results could be beneficial for application of partially coherent beam in anisotropic medium.
{"title":"Propagation properties of partially coherent vortex cosine-hyperbolic-Gaussian beams in uniaxial crystal orthogonal to the optical axis","authors":"M. Lazrek, M. Yaalou, Z. Hricha, A. Belafhal","doi":"10.1007/s11082-025-08047-w","DOIUrl":"10.1007/s11082-025-08047-w","url":null,"abstract":"<div><p>The analytical propagation functions for partially coherent vortex cosine-hyperbolic-Gaussian beams (PCvChGB) propagating through uniaxial crystal orthogonal to the optical axis are derived, and numerical examples analyze their spreading properties. It's shown that the intensity distribution of the PCvChGB is astigmatic and related to the initial beam parameters, namely the decentered parameter <i>b</i> and topological charge <i>M</i>, the coherence length <span>(sigma_{0})</span>, and the ratio of refractive index <span>({{n_{e} } mathord{left/ {vphantom {{n_{e} } {n_{0} }}} right. kern-0pt} {n_{0} }})</span>. The obtained results could be beneficial for application of partially coherent beam in anisotropic medium.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143361951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-05DOI: 10.1007/s11082-024-07995-z
Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Mohamed Rabia
This study focuses on the fabrication of WO₂I₂/poly o-amino-thiophenol porous spherical-nanocomposite (WO₂I₂/POATP PS-nanocomposite) with promising optical absorbance for photodetector applications. The PS-nanocomposite is synthesized through the oxidation of o-amino-thiophenol using iodine, followed by a reaction with Na₂WO₄. The resulting nanocomposite exhibits wide optical absorbance extending into the IR region and a small bandgap of 2.0 eV. The spherical particles have pores with a diameter of 5 nm, and their crystalline peaks demonstrate excellent crystallinity with a crystal size of 121 nm. This combination of crystalline behavior, morphology, and optical absorbance suggests that the WO₂I₂/POATP PS-nanocomposite is a highly sensitive photodetector suitable for a broad optical spectrum, including UV, visible, and IR regions. The device’s application in photon sensing is evaluated by measuring the photocurrent using linear sweep voltammetry, determining the current density (Jph) under light and dark conditions (Jo). The Jph and Jo values are found to be 0.8 and 0.48 mA/cm², respectively, resulting in a photocurrent of 0.32 mA/cm², a promising value that indicates significant photon sensitivity. The photoresponsivity (R) is assessed based on the impact of photon energies on the Jph values, with R values increasing from 7.2 to 8.0 mA/W as the wavelength decreases from 540 to 340 nm. Similarly, the detectivity (D) value increases from 0.164 × 10¹⁰ to 0.181 × 10¹⁰ Jones over the same wavelength range. At 730 nm, both R and D maintain substantial values of 6.4 mA/W and 0.145 × 10¹⁰ Jones, respectively. This fabricated optoelectronic device, with its excellent sensitivity, stability, reproducibility, low cost, and potential for mass production, holds significant promise for industrial applications as a highly effective photodetector.
{"title":"Fabrication of WO₂I₂/poly o-amino thiophenol porous spherical-nanocomposite with promising optical absorbance for photodetector device applications","authors":"Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Mohamed Rabia","doi":"10.1007/s11082-024-07995-z","DOIUrl":"10.1007/s11082-024-07995-z","url":null,"abstract":"<div><p>This study focuses on the fabrication of WO₂I₂/poly o-amino-thiophenol porous spherical-nanocomposite (WO₂I₂/POATP PS-nanocomposite) with promising optical absorbance for photodetector applications. The PS-nanocomposite is synthesized through the oxidation of o-amino-thiophenol using iodine, followed by a reaction with Na₂WO₄. The resulting nanocomposite exhibits wide optical absorbance extending into the IR region and a small bandgap of 2.0 eV. The spherical particles have pores with a diameter of 5 nm, and their crystalline peaks demonstrate excellent crystallinity with a crystal size of 121 nm. This combination of crystalline behavior, morphology, and optical absorbance suggests that the WO₂I₂/POATP PS-nanocomposite is a highly sensitive photodetector suitable for a broad optical spectrum, including UV, visible, and IR regions. The device’s application in photon sensing is evaluated by measuring the photocurrent using linear sweep voltammetry, determining the current density (Jph) under light and dark conditions (Jo). The Jph and Jo values are found to be 0.8 and 0.48 mA/cm², respectively, resulting in a photocurrent of 0.32 mA/cm², a promising value that indicates significant photon sensitivity. The photoresponsivity (R) is assessed based on the impact of photon energies on the Jph values, with R values increasing from 7.2 to 8.0 mA/W as the wavelength decreases from 540 to 340 nm. Similarly, the detectivity (D) value increases from 0.164 × 10¹⁰ to 0.181 × 10¹⁰ Jones over the same wavelength range. At 730 nm, both R and D maintain substantial values of 6.4 mA/W and 0.145 × 10¹⁰ Jones, respectively. This fabricated optoelectronic device, with its excellent sensitivity, stability, reproducibility, low cost, and potential for mass production, holds significant promise for industrial applications as a highly effective photodetector.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1007/s11082-025-08057-8
Hossein Karimkhani, Mohammad Ataul Karim
Modulation depth and its associated loss pose a significant challenge in electro-optical telecommunication systems. Optimal modulators strive to enhance modulation depth while minimizing loss rates. We propose a high-performance electro-optical hybrid plasmonic modulator based on graphene, hexagonal Boron Nitride (h-BN), and Molybdenum Disulfide (MoS2) layers. The substrate of the proposed modulator is SiO2 on a Silicon wafer, where Ag layers are embedded in the SiO2 layer and on top of the structure. Graphene layers at the edge of the upper and lower Ag layers and h-BN in between them create a waveguide capable of transmitting input light through the structure. Graphene and MoS2 layers increase the amount of light interaction increasing, in turn, modulation depth. The edge mode in the graphene layers confines light properly and increases the electrical field intensity in a narrow gap. The modulator’s performance is examined using a three-dimensional finite-difference time-domain (FDTD) method. The structure’s modulation depth, for a range of temperature, ranges between 40.54 dB/μm and 42.05 dB/μm. The maximum loss is estimated to be 5.723 dB/μm at 1.3 μm for 0.65 eV chemical potential, which yields a figure of merit (FoM) of 12.5 and extinction ratio (ER) of 99.51 dB. The equivalent circuit for the modulator is investigated in terms of parameters such as energy consumption and modulation bandwidth. The modulator demonstrates an impressively low energy consumption per bit, underscoring its efficiency and practicality. The modulator’s characteristics primarily arise from utilizing a thin layer of h-BN instead of thick dielectric layers. Unlike the previously examined configurations, applying voltage through the graphene layers substantially diminishes the insertion loss.
{"title":"Wide-band high performance optical modulator based on a stack of graphene and h-BN layers with plasmonic edge mode","authors":"Hossein Karimkhani, Mohammad Ataul Karim","doi":"10.1007/s11082-025-08057-8","DOIUrl":"10.1007/s11082-025-08057-8","url":null,"abstract":"<div><p>Modulation depth and its associated loss pose a significant challenge in electro-optical telecommunication systems. Optimal modulators strive to enhance modulation depth while minimizing loss rates. We propose a high-performance electro-optical hybrid plasmonic modulator based on graphene, hexagonal Boron Nitride (h-BN), and Molybdenum Disulfide (MoS<sub>2</sub>) layers. The substrate of the proposed modulator is SiO<sub>2</sub> on a Silicon wafer, where Ag layers are embedded in the SiO<sub>2</sub> layer and on top of the structure. Graphene layers at the edge of the upper and lower Ag layers and h-BN in between them create a waveguide capable of transmitting input light through the structure. Graphene and MoS<sub>2</sub> layers increase the amount of light interaction increasing, in turn, modulation depth. The edge mode in the graphene layers confines light properly and increases the electrical field intensity in a narrow gap. The modulator’s performance is examined using a three-dimensional finite-difference time-domain (FDTD) method. The structure’s modulation depth, for a range of temperature, ranges between 40.54 dB/μm and 42.05 dB/μm. The maximum loss is estimated to be 5.723 dB/μm at 1.3 μm for 0.65 eV chemical potential, which yields a figure of merit (FoM) of 12.5 and extinction ratio (ER) of 99.51 dB. The equivalent circuit for the modulator is investigated in terms of parameters such as energy consumption and modulation bandwidth. The modulator demonstrates an impressively low energy consumption per bit, underscoring its efficiency and practicality. The modulator’s characteristics primarily arise from utilizing a thin layer of h-BN instead of thick dielectric layers. Unlike the previously examined configurations, applying voltage through the graphene layers substantially diminishes the insertion loss.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1007/s11082-025-08045-y
Vinh Le Duc, Hong Nguyen Thi, Khoa Doan Quoc
A system of two cavities connected by a single-mode fiber is considered. We investigate the generation of bipartite entanglement between cavities by calculating bipartite negativity. We show that the phase transition point of PT-symmetry strongly depends on the phase factor characterizing the propagation of photons in the fiber. The range of that phase factor in which the system is in the unbroken phase of PT-symmetry is estimated. We also indicate that the entanglement between cavities depends not only on the gain and loss of energy in the system but also on that phase factor. In addition, we show that, under a fine-tuning of the phase factor, our system can be a source of maximally entangled states.
{"title":"Phase dependence of entanglement generation in a PT-symmetric system of two micro-cavities","authors":"Vinh Le Duc, Hong Nguyen Thi, Khoa Doan Quoc","doi":"10.1007/s11082-025-08045-y","DOIUrl":"10.1007/s11082-025-08045-y","url":null,"abstract":"<div><p>A system of two cavities connected by a single-mode fiber is considered. We investigate the generation of bipartite entanglement between cavities by calculating bipartite negativity. We show that the phase transition point of <i>PT</i>-symmetry strongly depends on the phase factor characterizing the propagation of photons in the fiber. The range of that phase factor in which the system is in the unbroken phase of <i>PT</i>-symmetry is estimated. We also indicate that the entanglement between cavities depends not only on the gain and loss of energy in the system but also on that phase factor. In addition, we show that, under a fine-tuning of the phase factor, our system can be a source of maximally entangled states.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-01DOI: 10.1007/s11082-024-08033-8
Muhammad Anwar Jan, Hafiz Muhammad Noman, Akbar Ali Qureshi, Fuchun Yang
Perovskite solar cells (PSCs) have emerged as a viable contender for the third-generation solar cell, thanks to their exceptional characteristics involving high power conversion efficiency (PCE) and comparatively low fabrication costs. However, the challenges associated with interfacial recombination and poor device stability under operating conditions are still limiting their commercial viability. These challenges can be overcome by incorporating interfacial layers in order to enhance charge transport and reduce recombination losses. Herein, we introduce piperazine dihydriodide (PZDI) as an interfacial layer between the hematite electron transport layer (ETL) and absorber layer in PSCs. The high-quality PZDI layer further passivates surface defects and improves energy level alignment to facilitate more efficient charge extraction. The PCE was noted significantly higher by incorporation of the PZDI interfacial layer, reaching 17.5%, compared to 13.0% for the reference device without an interfacial layer. Long-term stability tests demonstrated that the target device retains 91.80% of its initial efficiency compared to 82.9% for the reference device after 500 h. These findings highlight the key function of the PZDI interfacial layer enhancing the photovoltaic (PV) performance of PSCs and can serve as crucial components in the development of long-lasting and high-efficiency PV.